Citations refer to the original publication, not to a Scieee localized version.
Borghello, G., Lerario, E., Faccio, F., Koch, H. D., Termo, G., Michelis, S., Márquez Lasso, F. J., Palomo Pinto, R., & Muñoz Chavero, F. (2021). Ionizing radiation damage in 65 nm CMOS technology: influence of geometry, bias and temperature at ultra-high doses. Elsevier. https://doi.org/10.1016/j.microrel.2020.114016
Borghello, G., et al. Ionizing radiation damage in 65 nm CMOS technology: influence of geometry, bias and temperature at ultra-high doses. Elsevier, 2021. https://doi.org/10.1016/j.microrel.2020.114016.
Borghello, G., E. Lerario, F. Faccio, H.D. Koch, G. Termo, S. Michelis, F.J. Márquez Lasso, Rogelio Palomo Pinto, and Fernando Muñoz Chavero. Ionizing radiation damage in 65 nm CMOS technology: influence of geometry, bias and temperature at ultra-high doses. Elsevier, 2021. https://doi.org/10.1016/j.microrel.2020.114016.
Borghello, G. et al. (2021) Ionizing radiation damage in 65 nm CMOS technology: influence of geometry, bias and temperature at ultra-high doses. Elsevier. Available at: https://doi.org/10.1016/j.microrel.2020.114016.
G. Borghello et al., “Ionizing radiation damage in 65 nm CMOS technology: influence of geometry, bias and temperature at ultra-high doses,” Elsevier, 2021, doi: 10.1016/j.microrel.2020.114016.
@misc{borghello2021ionizing,
author = {Borghello, G. and Lerario, E. and Faccio, F. and Koch, H.D. and Termo, G. and Michelis, S. and Márquez Lasso, F.J. and Palomo Pinto, Rogelio and Muñoz Chavero, Fernando},
title = {Ionizing radiation damage in 65 nm CMOS technology: influence of geometry, bias and temperature at ultra-high doses},
year = {2021},
publisher = {Elsevier},
doi = {10.1016/j.microrel.2020.114016},
url = {https://doi.org/10.1016/j.microrel.2020.114016}
}
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