Citations refer to the original publication, not to a Scieee localized version.
Fernández García, M., Jaramillo Echeverría, R., Moll, M., Montero Santos, R., Palomo Pinto, R., Vila, I., & Wiehe, M. (2020). High resolution 3D characterization of silicon detectors using a Two Photon Absorption Transient Current Technique. Elsevier. https://doi.org/10.1016/j.nima.2019.162865
Fernández García, Marcos, et al. High resolution 3D characterization of silicon detectors using a Two Photon Absorption Transient Current Technique. Elsevier, 2020. https://doi.org/10.1016/j.nima.2019.162865.
Fernández García, Marcos, Richard Jaramillo Echeverría, Michael Moll, Raúl Montero Santos, Rogelio Palomo Pinto, Iván Vila, and Moritz Wiehe. High resolution 3D characterization of silicon detectors using a Two Photon Absorption Transient Current Technique. Elsevier, 2020. https://doi.org/10.1016/j.nima.2019.162865.
Fernández García, M. et al. (2020) High resolution 3D characterization of silicon detectors using a Two Photon Absorption Transient Current Technique. Elsevier. Available at: https://doi.org/10.1016/j.nima.2019.162865.
M. Fernández García et al., “High resolution 3D characterization of silicon detectors using a Two Photon Absorption Transient Current Technique,” Elsevier, 2020, doi: 10.1016/j.nima.2019.162865.
@misc{fernandezgarcia2020high,
author = {Fernández García, Marcos and Jaramillo Echeverría, Richard and Moll, Michael and Montero Santos, Raúl and Palomo Pinto, Rogelio and Vila, Iván and Wiehe, Moritz},
title = {High resolution 3D characterization of silicon detectors using a Two Photon Absorption Transient Current Technique},
year = {2020},
publisher = {Elsevier},
doi = {10.1016/j.nima.2019.162865},
url = {https://doi.org/10.1016/j.nima.2019.162865}
}
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