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Selective Harmonic Mitigation Technique for High-Power Converters

Abstract

In high-power applications, the maximum switching frequency is limited due to thermal losses. This leads to highly distorted output waveforms. In such applications, it is necessary to filter the output waveforms using bulky passive filtering systems. The recently presented selective harmonic mitigation pulsewidth modulation (SHMPWM) technique produces output waveforms where the harmonic distortion is limited, fulfilling specific grid codes when the number of switching angles is high enough. The related technique has been previously presented using a switching frequency that is equal to 750 Hz. In this paper, a special implementation of the SHMPWM technique optimized for very low switching frequency is studied. Experimental results obtained applying SHMPWM to a three-level neutral-point-clamped converter using a switching frequency that is equal to 350 Hz are presented. The obtained results show that the SHMPWM technique improves the results of previous selective harmonic elimination pulsewidth modulation techniques for very low switching frequencies. This fact highlights that the SHMPWM technique is very useful in high-power applications, leading its use to an important reduction of the bulky and expensive filtering elements.

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Selective Harmonic Mitigation Technique for High-Power Converters

Author: Nápoles Luengo, Javier; León Galván, José Ignacio; Portillo Guisado, Ramón Carlos; García Franquelo, Leopoldo; Aguirre Echanove, Miguel Ángel
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Year: 2010
DOI: 10.1109/TIE.2009.2026759
Source: https://idus.us.es/bitstreams/3c48d97c-196c-46e8-b0a0-e9425f9a7e6e/download
Selec i e Ha monic Mi iga ion Technique
o High Powe Con e e s
J. Napoles, J. I. Leon, Membe ,IEEE, R. Po illo, Membe ,IEEE, L. G. F anquelo, Fellow Membe ,IEEE, and
M. A. Agui e, Membe ,IEEE
Abs ac —In high powe applica ions he maximum swi ching
equency is limi ed due o he mal losses. This leads o highly
dis o ed ou pu wa e o ms. In such applica ions, i is necessa y
o il e he ou pu wa e o ms using bulky passi e il e ing
sys ems. The ecen ly p esen ed selec i e ha monic mi iga ion
echnique (SHMPWM) p oduces ou pu wa e o ms whe e he
ha monic dis o ion is limi ed ul illing speci ic g id codes when
he numbe o swi ching angles is high enough. The ela ed ech-
nique has been p e iously p esen ed using a swi ching equency
equal o 750Hz. In his pape , a special implemen a ion o he
SHMPWM echnique op imized o e y low swi ching equency
is s udied. Expe imen al esul s ob ained applying SHMPWM o
a h ee-le el neu al poin clamped con e e using a swi ching
equency equal o 350Hz a e p esen ed. The ob ained esul s
show ha he SHMPWM echnique imp o es he esul s o
p e ious selec i e ha monic elimina ion (SHEPWM) echniques
o e y low swi ching equencies. This ac highligh s ha he
SHMPWM echnique is e y use ul in high powe applica ions
leading i s use an impo an educ ion o he bulky and expensi e
il e ing elemen s.
Index Te ms—Mul ile el sys ems, Ha monic dis o ion, Fil e s.
I. INTRODUCTION
IN HIGH powe applica ions, he ha monic con en o he
ou pu wa e o ms has o be educed as much as possible in
o de o a oid dis o ion in he g id and o each he maximum
ene gy e iciency. On such applica ions, he he mal losses
in he powe semiconduc o s limi he maximum swi ching
equency o a ew hund eds o He z and mul ile el con e e s
a e he mos sui able powe sys ems o be used. Many ecen
wo ks wi h di e en mul ile el con e e opologies ha e been
ecen ly p esen ed showing hei good pe o mance o high
powe applica ions [1]–[3].
In addi ion, i is necessa y o use special modula ion ech-
niques and il e ing sys ems in o de o ul il he g id codes in
he poin o common coupling. Usually g id codes es ablish
speci ic limi s o ha monics up o 50 h and o he o al
ha monic dis o ion (THD). The passi e il e s used o educe
ha monic dis o ion in o he g id a e e y bulky and expensi e.
On he o he hand, he use o an e icien modula ion
me hod is e y con enien o ob ain ou pu wa e o ms wi h
accep able ha monic con en . One o he mos in e es ing
Manusc ip ecei ed Feb ua y 5, 2009. Accep ed o publica ion June 11,
2009. Copy igh c
°2009 IEEE. Pe sonal use o his ma e ial is pe mi ed.
Howe e , pe mission o use his ma e ial o any o he pu poses mus be
ob ained om he IEEE by sending a eques o [email p o ec ed].
J. Napoles, J. I. Leon, L. G. F anquelo, R. Po illo and M. A. Agui e a e
wi h he Elec onic Enginee ing Depa men , Uni e si y o Se ille (Spain),
(e-mail: [email p o ec ed]).
modula ion echniques o high powe applica ions is he well
known selec i e ha monic elimina ion pulse wid h modula ion
(SHEPWM) echnique o iginally p esen ed in [4]. This ech-
nique is able o ob ain ou pu signals wi h lowe ha monic
con en han o he echniques because makes ze o a limi ed
numbe o low o de ha monics. On he o he hand, he
ecen ly p esen ed selec i e ha monic mi iga ion pulse wid h
modula ion (SHMPWM) echnique [5] is able o elax he
cons ain s used in he SHEPWM echnique o ob ain ou pu
wa e o ms wi h be e ha monic pe o mance aking in o ac-
coun ac ual g id egula ions. In [5] i was shown ha using he
SHMPWM echnique wi h he swi ching equency equal o
750Hz, i is possible o ul il bo h he CIGRE WG 36-05 and
EN 50160 g id code equi emen s wi hou using any addi ional
il e ing sys em. In his pape , a e y low swi ching equency
equal o 350 Hz is conside ed using only 7 swi ching angles
which leads o new designs o he objec i e unc ion (OF)
o he SHMPWM echnique. This is a big di e ence wi h
e e ence [5] whe e he high numbe o swi ching angles
achie ed he ul illmen o he g id code wi hou using il e ing
sys ems. In his pape i is shown ha using 7 swi ching angles,
some ha monics a e abo e he maximum limi s o he g id
code e en using he SHMPWM echnique. An analy ical way
o de ine he OF has been in oduced in his pape de ining
ac o s such as he sa e y ma gin ρand he penal y ac o
λp. Depending on he speci ic applica ion o he high powe
con e e , wo possible solu ions o de ine he OF ha e been
in oduced. The di e en solu ions (s a egies S1 and S2) a e
ocused on he imp o emen o di e en ha monics as is
explained in sec ion IV. A compa ison wi h he SHEPWM
echnique in he same low swi ching equency condi ions is
included. A h ee-phase h ee-le el diode clamped con e e is
used as expe imen al se up o illus a e he bene i s ob ained
by he SHMPWM echnique.
Using SHEPWM i is possible o make ze o a limi ed
numbe o ha monics bu he non canceled ha monics a e
no conside ed in he algo i hm and could each e y high
ampli udes. This leads o he ac ha i is no possible o
keep hem below a desi ed alue ha ing a g ea impac in he
size and cos o he il e ing sys em. Howe e , he lexibili y o
SHMPWM can be used o apply di e en c i e ia o low and
high o de ha monics conside ed in he g id code. Low o de
ha monics can be educed o alues below he limi s speci ied
in he g id code. High o de ha monics, whe e he e is no any
con ol using SHEPWM, can be educed using SHMPWM. In
his pape , he compu ing e o o he SHMPWM echnique is
E
-E
0
Vao
ω
π
2π
α1
α0α2
π
2
α3
α4
α0 ≤ α1 ≤ ... ≤ αk-1 ≤ π/2
Fig. 1. Th ee-le el p e-p og ammed PWM swi ching pa e n wi h i e
swi ching angles (α0,α1,α2,α3,α4).
ocused on educing as much as possible he ha monic con en
which has o be il e ed o ul il he g id code. The main goal
is o educe he il e ing equi emen s in o de o dec ease he
size, weigh and cos o he il e ing elemen s.
This pape is o ganized as ollows; in sec ion II he SHM-
PWM p inciple is b ie ly summa ized. Nex sec ion desc ibes
he il e design p oblem and he mos commonly used solu-
ion. In sec ion IV, he di e ences be ween SHEPWM and
SHMPWM echniques a e de ailed and a compa ison using
he ob ained simula ion esul s is ca ied ou in sec ion V.
Expe imen al esul s alida ing he imp o emen s ob ained
using he SHMPWM me hod a e p esen ed in sec ion VI.
Finally, he conclusions o he pape a e de ailed in he las
sec ion.
II. SHMPWM PRINCIPLE
The Fou ie analysis o he ypical h ee-le el p e-
p og ammed PWM swi ching pa e n (Fig. 1) conside ing
kswi ching angles αi(i=0,...,k-1) gene a es he ollowing
equa ions whe e Hjis he ha monic ampli ude o j h o de :
Hj=4
jπ
k−1
X
i=0
h(−1)isin(jαi)i,
whe e
j= 1,2, . . . , n. (1)
These equa ions can be sol ed in o de o ob ain he
ha monic ampli udes H1,H2,..., Hndesi ed alues. Classic
SHEPWM echnique ixes he alue o H1(which is no mally
called modula ion index (Ma)) o a ce ain alue and also elim-
ina es k-1 ha monics. Usually, he mos in e es ing ha monic
o de s o be elimina ed a e he odd non- iplen ones because
using h ee-phase opologies wi hou neu al connec ion he
iplen ha monics do no appea in he line- o-line ol ages.
The e o e, he applica ion o he SHEPWM echnique leads
o sol e he ollowing exp essions:
H1=4
π
k−1
X
i=0
h(−1)isin(αi)i
0 = 4
jπ
k−1
X
i=0
h(−1)isin(jαi)i,
whe e
j= 5,7,11, . . . , q. (2)
The SHMPWM echnique is based on he idea ha i is
no necessa y o educe o ze o he ha monics while hey a e
kep below accep able le els. Those le els a e de ined by he
g id codes which es ablish maximum allowed limi s o each
ha monic o de and THD in o de o main ain he quali y
o he g id. The SHMPWM echnique is based on sol ing
he ollowing inequali ies sys em whe e Liis he maximum
allowed le el imposed by he applied g id code.
|Ma−H1| ≤ L1
1
|H1|
4
jπ
k−1
X
i=0
h(−1)isin(jαi)i≤Lj,
whe e
j= 5,7,11,...,49.(3)
The SHMPWM me hod elaxes he es ic ions o (2) and is
able o gene a e ou pu signals wi h low ha monic con en ap-
plying (3). This ac allows o conside mo e ha monic o de s
han he SHEPWM echnique as can be obse ed om (2) and
(3). This lexibili y is e y use ul in high powe sys ems due o
he il e ing sys em equi emen s will be elaxed which leads
an impo an educ ion in he cos , olume and weigh o he
il e ing componen s. Hence, i is possible o choose he mos
app op ia e il e ing shape o each applica ion p e iously o
he compu ing p ocess.
The inequali ies sys em (3) can be syn hesized in an objec-
i e unc ion (OF) which has o be minimized:
OF(α0, . . . , αk−1) = X
i=1,5,...,49
ciE2
i+cT HDTHD. (4)
The cicoe icien s o he OF a e modeled as non linea
unc ions and, in gene al, ha e been implemen ed as ollows:
i (Ei< ρLi)ci= 1;
else ci=λp;
(5)
Whe e ρ²(0,1] is he sa e y ma gin o he maximum allowed
le el Liand λpis de ined as he penal y ac o (λpÀ1).
The Li alues co espond o he maximum allowed le els
shown in (3). As can be obse ed om exp ession (5), i he
ob ained ha monic dis o ion o o de i h (Ei) is below he
80% (assuming ha ρ=0.8) o i s co esponding Li alue, he
associa ed ciis equal o 1. In o he case, as he dis o ion is
close o he maximum allowed alue Li, a penal y is imposed
in he cicoe icien in o de o ocus he op imiza ion sea ch
educing he dis o ion in his speci ic ha monic o de . This
penal y is de ined as he weigh ac o λp.
In [5], whe e he SHMPWM echnique was in oduced using
15 swi ching angles, a sa e y ma gin ρequal o 0.8 and
a cons an a io penal y ac o λpequal o 1000 was used.
The Li alues we e equal o he maximum alues de ined
by he applied g id code. As was shown in [5], using 15
swi ching angles pe qua e o pe iod gi es enough lexibili y
o comple ely ul ill he g id code. Howe e , o e y high
powe applica ions, a low numbe o swi ching angles has o
be used. In his pape , 7 swi ching angles ha e been applied
( his co esponds o swi ching equency equal o 350Hz)
and his does no allow enough ma gin o mee he g id
codes wi hou any addi ional il e ing sys em. In his way,
as examples o he lexibili y o he SHMPWM echnique,
di e en pa icula iza ions o he exp ession (5) ha e been
applied in o de o achie e se e al op imiza ion c i e ia.
I mus be no iced ha he de ini ion o he ci unc ions is
he base o he SHMPWM echnique because hey mus be
adap ed o he conc e e condi ions o he applica ion. In his
pape wo di e en s a egies ha e been s udied and he de ails
o each implemen a ion will be discussed in sec ion IV.
The whole sys em desc ibed by (3) and (4) can be sol ed
using an op imiza ion me hod. Di e en algo i hms ha e been
es ed bu he well known simula ed annealing op imiza ion
me hod [6], [9] has been inally used in he p esen pape
because i easily allows new o mula ions o he p oblem.
O he me hods such as pa icle swa m, abu sea ch, gene ic
algo i hms, an colony sys ems, s ochas ic e olu ion, e ce e a
would ob ain simila esul s [7], [8], [10].
III. FILTER DESIGN
High powe con e e s ha e o wo k a e y low swi ching
equency leading o ou pu signals wi h undesi ed ha monic
dis o ion. These ha monics ha e o be il e ed in o de o
main ain he quali y in he powe supply. The ob ained expe i-
men al esul s p esen ed in his pape show ha he SHMPWM
echnique is a powe ul ool o be applied in o de o elax he
inal il e ing equi emen s. Any o he elemen which educes
he ha monic con en as he coupling ans o me can also
be conside ed in o de o elax he equi emen s o he il e .
The e a e di e en possible il e ing s a egies o educe he
ha monic con en gene a ed by powe con e e s. The mos
commonly used a e passi e il e s, ac i e il e s and hyb id
il e s mixing bo h passi e and ac i e modules [11]–[13]. In
high powe applica ions, passi e il e s a e no mally he mos
sui able solu ion. The il e opology mos commonly used in
high powe applica ions is he LCL il e wi h ha monic aps
(Fig. 2). The il e design is a e y impo an opic because in
high powe applica ions he eac i e elemen s a e e y bulky
and expensi e. Some impo an design guides can be ound in
[14] and [15]. The mos impo an p oblem ela ed o passi e
il e s is he exis ence o possible esonances wi h he g id [16].
Di e en echniques ha e been epo ed in o de o a oid his
phenomenon when passi e il e s a e used [17].
IV. SHMPWM VS SHEPWM
As i has been commen ed abo e, he SHEPWM echnique
has been widely used o high powe applica ions [18]–[21].
3 LEVELS
FILTER
1 2 3 4
Fig. 2. Typical passi e il e opology o high powe applica ions. This
s uc u e is known as LCL il e wi h ha monic aps.
Wi h his echnique i is possible o di ec ly elimina e a limi ed
numbe o ha monics (being his limi a ion ela ed o he used
swi ching equency) educing he uned il e s needed o mee
he g id codes. The main d awback o he SHEPWM echnique
is ha he alue o he non-ze oed ha monics can no be
managed o ge any op imiza ion objec i e. The SHMPWM
echnique imp o es he SHEPWM esul s because i is able
o educe he il e ing equi emen s gene a ing ou pu signals
wi h a highe numbe o ha monics unde he alues speci ied
in he g id codes using he same swi ching equency. This
ac makes he SHMPWM echnique specially use ul o high
powe applica ions. In addi ion, SHMPWM echnique can
be used in a la ge ange o Maimp o ing o he p e ious
echniques [22]–[24]. In his wo k, g id codes EN 50160 [25]
and CIGRE WG 36-05 [26] ha e been conside ed in he
compu ing p ocess bu any o he g id code could be chosen.
These g id codes de ail speci ic limi s up o ha monic o de
50 h. The THD is also limi ed by hese speci ic g id codes o
8% bu conside ing only he ha monics up o 40 h. Table I
summa izes he limi s speci ied by he applied g id codes.
In o de o compa e SHEPWM and SHMPWM echniques,
i is assumed ha he con ol s a egy o he con e e a oids
any possible esonance. The numbe o swi ching angles αiis
equal o 7 pe qua e o a 50Hz cycle which co esponds o
a swi ching equency o 350Hz using a h ee-le el con e e .
Wi h 7 swi ching angles he SHEPWM can ix he Maand
elimina e six non-desi ed ha monics, usually he non- iplen
lowe o de ha monics, i.e. 5 h,7 h,11 h,13 h,17 h and
19 h. A Ma ange om 0.60 o 1.16 in s eps o 0.01 is
applied conside ing bo h he SHEPWM and he SHMPWM
echniques.
The lexibili y o he SHMPWM can be used in he com-
pu ing p ocess in o de o de e mine he swi ching angles
αiwhich gene a e he mos app op ia e ha monic spec um
depending on he applica ion. In his wo k wo di e en
s a egies ha e been s udied:
1) S a egy I (S1): A limi ed numbe o low o de ha -
monics mus mee he g id code wi hou any il e ing
sys em. The numbe o hese ha monics mus be a leas
he same han using SHEPWM. The es o ha monics
speci ied in he g id code, which exceed he maximum
limi s, a e educed as much as possible independen ly
whe he hey a e low o high o de ha monics. This idea
can be ansla ed o he OF using a pa icula ized e sion
o he exp ession (5). In his case, he penal y ac o λpis
equal o 1000. Besides, he Lile els ha e been di ided
in wo g oups. Fo ha monics up o 19 h, he Li alues
TABLE I
GRID CODE EN 50160 REQUIREMENTS + QUALITY GRID CODE CIGRE WG 36-05
Odd non- iplen ha monics Odd iplen ha monics E en Ha monics
Ha monic Rela i e Ha monic Rela i e Ha monic Rela i e
o de (n) Vol age (Li) o de (n) Vol age (Li) o de (n) Vol age (Li)
5 6% 3 5% 2 2%
7 5% 9 1.5% 4 1%
11 3.5% 15 0.5% 6...10 0.5%
13 3% 21 0.5% >10 0.2%
17 2% >21 0.2%
19 1.5%
23 1.5%
25 1.5%
>25 0.2+32.5/n
a e he limi s speci ied by he g id code as in [5]. Fo
highe ha monics up o 49 h, he maximum ha monic
dis o ion ob ained using he SHEPWM echnique in he
whole ange o Mahas been used as he Li alues. In
his case ρ=0.9.
2) S a egy II (S2): A limi ed numbe o low o de ha -
monics mus mee he g id code wi hou any il e ing
sys em. The numbe o hese ha monics mus be a
leas he same han using SHEPWM as in S1. Fo he
es o ha monics conside ed in he g id code, S2 is
ocused on educing as much as possible he ha monic
con en om o de 23 d o 29 h. In addi ion, S2 is
designed o keep, i possible, he highe o de ha monics
up o 49 h below he maximum alues ob ained using
he SHEPWM modula ion echnique. In his case, he
pa icula ized e sion o exp ession (5) is de ined using
a penal y ac o λpequal o 5000 o all he ha monics
up o 29 h and equal o 1000 o highe ha monics. The
Lile els hose de ined o s a egy S1 excep o he
ha monics 23 d,25 h and 29 h whe e a cons an alue
equal o 15% has been used. Again has been chosen
ρ=0.9.
S1 ep esen s he mos immedia e way o apply SHMPWM
wi h a educed numbe o swi ching angles. On he o he hand,
S2 is ocused on educing he g id connec ion il e aking in o
accoun ha he eac i e elemen s o il e low o de ha monics
a e specially bulky and expensi e. S2 pays special a en ion on
lowe o de ha monics a he expense o elaxing he allowed
dis o ion o he high o de ha monics.
I mus be no iced ha bo h S1 and S2 s a egies a e
ob ained de ining he cicos unc ions men ioned in sec ion
II in a sui able way. The wo king condi ions a e comple ely
di e en compa ed wi h [5] and an heu is ic sea ch is needed
o ansla e he desc ip ions o he s a egies p esen ed abo e o
he g oup o ci unc ions. This sea ch is an impo an no el y
p esen ed in his pape .
V. SIMULATION RESULTS
SHEPWM echnique and SHMPWM echnique applying S1
and S2 ha e been es ed i s ly by simula ions. A h ee-le el
con e e has been conside ed o compa e he echniques. Fig.
3 and Fig. 4 show a compa ison be ween he ob ained simula-
ion esul s using he SHEPWM and SHMPWM echniques
conside ing he s a egies S1 and S2 espec i ely. In bo h
igu es a e ep esen ed he wo s THD and he wo s alue
Exp I 0.60<Ma<1.16
0
10
20
30
40
50
60
5
7
11
13
17
19
23
25
29
31
35
37
41
43
47
49
THD40
SHMPWM
SHEPWM
G id Code
S a egy S1
0.6<M <1.16
a
Maximum Dis o ion Le els (%)
Ha monics and THD
Fig. 3. Simula ion esul s compa ing SHEPWM and SHMPWM echniques
conside ing he s a egy S1 wi h swi ching equency equal o 350Hz. Wo s
case in he in e al 0.6< Ma<1.16.
0
10
20
30
40
50
60
5
7
11
13
17
19
23
25
29
31
35
37
41
43
47
49
THD40
SHMPWM
SHEPWM
G id Code
S a egy S2
0.6<M <1.16
a
Maximum Dis o ion Le els (%)
Ha monics and THD
Fig. 4. Simula ion esul s compa ing SHEPWM and SHMPWM echniques
conside ing he s a egy S2 wi h swi ching equency equal o 350Hz. Wo s
case in he in e al 0.6< Ma<1.16.
o dis o ion o each ha monic ob ained o a speci ic ange
o he modula ion index Ma( om 0.60 o 1.16). In Fig. 3,
i is clea ha using he SHMPWM echnique wi h s a egy
S1, he maximum dis o ion le els o he non-elimina ed
ha monics a e unde he maximum alues ob ained using
he SHEPWM echnique. This ac is especially ele an o
ha monics 23 d o 31s whe e he esul s ob ained using he
SHEPWM echnique nea ly double hose ob ained using he
SHMPWM me hod.
Fig. 4 shows a compa ison be ween he simula ion e-
sul s ob ained using he SHEPWM echnique and SHMPWM
me hod wi h s a egy S2. In his case, he maximum dis o ion
le els in he ange 23 d o 29 h ha e been educed as much
as possible compa ed wi h he SHEPWM esul s and wi h
SHMPWM using S1. This is e y in e es ing because he
il e ing elemen s needed in he uned il e s a e mo e bulky,
hea y and expensi e in low o de ha monics. This ad an age
is achie ed a he expense o he ac ha ha monics 35 h
and 37 h a e highe han he maximum alues ob ained using
SHEPWM. S2 could be a e y in e es ing s a egy in hose
cases whe e is be e o educe he maximum powe suppo ed
by he eac i e elemen s o low o de ha monics han in high
o de ha monics because he cos , weigh and size g ow mo e
han linea ly. These esul s demons a e ha he lexibili y o
he SHMPWM me hod can be e y use ul and le s he designe
o choose he mos app op ia e il e ing shape acco ding o
each applica ion. In S2, he main goal is o educe as much as
possible ha monics 23 d o 29 h bu any o he s a egy could
be chosen.
Using SHMPWM echnique wi h S1 o S2, i can be no iced
ha he e y low o de ha monics (up o ha monic 19 h) he
dis o ion le els a e unde he limi s speci ied by he g id
codes. Using SHEPWM and SHMPWM echniques i is no
necessa y any uned il e in he low o de ha monics. In
he highe o de ha monics, i S1 is applied, he ob ained
dis o ion is much highe using SHEPWM me hod han using
he SHMPWM echnique. This means ha he uned il e s
ha e o suppo highe powe s which deal wi h mo e bulky and
expensi e il e ing elemen s. On he o he hand, i S2 is ap-
plied, he mos impo an ad an age o SHMPWM compa ed
wi h SHEPWM is ocused on he educ ion o he uned il e s
dedica ed o he lowe o de ha monics. I mus be no iced
ha his is a e y impo an ad an age because he cos in
bo h, induc o s and capaci o s, g ow mo e han linea ly when
he maximum cu en (o ol age) is inc eased keeping he
induc ance o eac ance alue.
VI. EXPERIMENTAL RESULTS
All he esul s p esen ed in he p e ious sec ions ha e been
expe imen ally es ed using he 150kVA IGBT-based back- o-
back h ee-le el h ee-phase diode-clamped con e e shown
in Fig. 5. This p o o ype is a scale down model o high
powe con e e s and bo h he modula ion echniques and
expe imen al esul s ob ained wi h i can be ex ended o any
h ee-le el highe powe con e e . The chosen semiconduc o s
a e he IGBT modules SKM 300 GB 123 D o 300A and
1200V om Semik on. A ha dwa e pla o m based on a
TMS320VC33 DSP is used o con ol he ec i ie and he
in e e sides o he con e e . The ec i ie side is con olled
o es ablish a DC-link ol age equal o 800V. The in e e side
is used o eed a passi e RL load wi h R=120Ωand L=15mH.
Bo h SHMPWM and SHEPWM echniques ha e been applied
o he in e e in o de o compa e hei pe o mances. In
he compu ing p ocess eal powe semiconduc o s ha e been
conside ed o keep a sa e y ma gin o 32µs be ween wo
consecu i es swi ching angles as in [22].
The SHMPWM echnique in a closed loop con ol scheme
was p esen ed in [27] whe e he swi ching equency was equal
o 750Hz. Howe e , in his case, he e e ence wa e o ms o
be gene a ed by he in e e side a e de e mined in open loop
co esponding o a 50Hz pu ely sinusoidal signal. In addi ion,
in his pape , he same g id codes a e applied bu only se en
Fig. 5. 150 kVA IGBT-based back- o-back h ee-le el diode-clamped in e e .
The DC-Link ol age is 800V.
Fig. 6. Expe imen al phase o middle poin ol age using 7 swi ching angles
o a h ee-le el con e e ob ained using a 1:5 ol age a io oscilloscope
p obe.

TABLE II
SIMULATION AND EXPERIMENTAL RESULTS USING SHEPWM AND SHMPWM TECHNIQUES CONSIDERING STRATEGIES S1 AND S2
Ha monic Maximum SHEPWM(%) SHMPWM-S1(%) SHMPWM-S2(%)
o de (n) Limi (Li) simula ions expe imen s simula ions expe imen s simula ions expe imen s
5 6 0.00 0.26 5.40 5.54 5.40 5.50
7 5 0.00 0.26 4.50 4.48 4.50 4.47
11 3.5 0.00 0.22 3.15 3.21 3.15 3.19
13 3 0.00 0.18 2.70 2.74 2.68 2.73
17 2 0.00 0.20 1.80 1.93 1.80 1.82
19 1.5 0.00 0.33 1.35 1.45 1.35 1.37
23 1.5 34.52 32.03 20.16 20.48 7.60 7.75
25 1.5 30.08 28.07 16.80 16.71 13.93 12.02
29 1.32 32.49 33.05 17.64 17.93 15.20 15.06
31 1.25 29.30 27.02 15.12 15.05 25.32 25.14
35 1.13 13.76 13.09 12.45 12.57 22.82 22.40
37 1.08 15.45 15.15 9.45 9.95 23.26 22.85
41 0.99 12.22 12.09 7.56 7.68 12.06 12.21
43 0.96 12.12 12.07 7.56 7.32 11.14 10.97
47 0.89 16.72 17.02 8.82 8.88 8.18 8.02
49 0.86 15.77 15.23 8.32 8.03 8.24 7.84
THD40 8 48.21 49.84 32.31 34.03 34.87 34.12
swi ching angles a e conside ed leading o a low swi ching
equency equal o 350Hz as can be obse ed in Fig. 6. Fig. 7
shows he cu en o one phase in he load and he line ol age
o Ma=1.20 using he SHMPWM echnique wi h s a egy
S2. An oscilloscope ol age p obe wi h an a enua ion a io
o 1:5 and a 10mV/A cu en p obe we e used o ob ain bo h
cap u es. The SHMPWM echnique allows o ob ain solu ions
wi h good pe o mance wi h Maup o 1.20. Howe e , a
modula ion index ange om 0.6 o 1.16 is chosen in o de
o make a ai compa ison wi h he well-known SHEPWM
echnique.
In Fig. 8, he ends o he magni udes o he ha monics
(23 d,25 h,29 h and 31s ) using he di e en echniques
s udied in his pape ha e been ep esen ed. Fig. 8a, Fig.
8b and Fig. 8c co espond o he esul s ob ained using he
Fig. 7. Expe imen al cu en and line ol age o Ma=1.20 ob ained using
a 1:5 ol age a io oscilloscope p obe and 10mV/A o he cu en p obe
.
SHEPWM echnique, using he SHMPWM wi h s a egy S1
and using he SHMPWM wi h s a egy S2 espec i ely. In all
he cases, he e ical scale has been adjus ed om 0% o
35% o he undamen al ha monic ampli ude. The ho izon al
scale is he simula ion ime. In he expe imen , he modula ion
index Mais changing con inuously om 0.60 o 1.16 using
s eps equal o 0.01. Each speci ic modula ion index alue is
applied du ing 1 second and he expe imen al esul s ha e been
aken du ing 1 minu e in o de o show he esul s o all he
modula ion index ange.
All he expe imen al esul s a e summa ized in Table II o
expe imen s E1 and E2. F om le o igh a e shown he
ha monic o de , he maximum le els speci ied by he g id
codes and he esul s ob ained wi h SHEPWM and SHMPWM
echniques. The shown esul s co espond wi h he maximum
ha monic dis o ion ob ained in he whole ange o Ma. All he
ha monic dis o ion alues a e speci ied as a pe cen age espec
o he undamen al ha monic alue. F om op o bo om a e
s udied all he ha monics o in e es (odd non- iplen) and in
he inal ow is de ailed he THD ob ained conside ing up o
ha monic 40 h.
The esul s om Table II show he ad an ages ob ained
using he SHMPWM echnique in compa ison wi h SHEPWM
due o he lexibili y o he me hod. As can be obse ed om
Table II, he simula ion esul s a e in acco dance wi h he
ob ained expe imen al esul s. F om he expe imen al esul s,
o ha monics up o 19 h, using SHEPWM and SHMPWM i
is no necessa y any il e ing sys em because he maximum
ou pu alues a e always unde he limi speci ied in he
g id codes. Fo he es o ha monics conside ed by he
g id code, om 23 d o 49 h, he esul s ob ained using he
SHMPWM echnique depend on he selec ed s a egy du ing
he compu a ion p ocess (S1 o S2).
Conside ing E1, he maximum alues ob ained using SHM-
PWM a e always below he maximum alues ob ained using
a)
b)
c)
35%
0%
35%
0%
35%
0%
35%
0%
35%
0%
35%
0%
35%
0%
35%
0%
35%
0%
35%
0%
35%
0%
35%
0%
Fig. 8. Expe imen al alues in he whole Ma ange ob ained using: a)
SHEPWM, b) SHMPWM-S1 and c) SHMPWM-S2. F om op o bo om,
ha monics 23 d,25 h,29 h and 31s . The scales ha e been adjus ed om
0 o 35% o he undamen al ha monic ampli ude.
SHEPWM in he whole Ma ange. This esul ep esen a g ea
ad an age o SHMPWM espec o he SHEPWM because he
g id connec ion il e equi emen s will be clea ly educed. Fo
ins ance, ha monic dis o ions om 23 d o 31s a e imp o ed
educing he maximum le el nea ly o he hal alue.
Conside ing E2, o ha monics om 23 d o 49 h, om
da a o Table II i can be no iced ha ha monics 23 d o
29 h a e g ea ly educed compa ed wi h hose ob ained using
SHEPWM. This was he p ima y objec i e o s a egy S2 o
de e mine he swi ching angles o be applied o he SHMPWM
echnique. In ac , he dis o ion o ha monics om 23 d o
29 h using S2 is also lowe han ha achie ed by s a egy
S1. This imp o emen is achie ed a he expense o he ac
ha ha monics 35 h and 37 h ha e dis o ion abo e he le el
ob ained using he SHEPWM echnique. S2 was de ined in
his way because he il e ing elemen s needed o mee he
g id codes a e bigge and mo e expensi e whils he ha monics
conside ed ha e lowe o de s.
VII. CONCLUSIONS
In his pape , a compa ison be ween he SHEPWM and
SHMPWM o e y low swi ching equency (350Hz) o a
h ee-le el con e e is p esen ed. In high powe applica ions,
he he mal losses limi he maximum swi ching equency
o a ew hund eds o He z ( s<500Hz). In his con ex ,
i is necessa y o elimina e he undesi ed ha monics using
il e ing sys ems. The SHEPWM has been adi ionally used in
high powe applica ions because i is able o gene a e ou pu
wa e o ms wi h a limi ed numbe o elimina ed ha monics.
In his pape i is demons a ed ha using e y low swi ching
equency, he SHMPWM echnique is able o gene a e ou pu
signals wi h be e ha monic pe o mance compa ed o he
SHEPWM echnique in a wide ange o he modula ion index.
In he pape , he lexibili y o he SHMPWM echnique has
been exploi ed conside ing di e en c i e ia o de e mine he
swi ching angles o be applied o he h ee-le el con e e .
One o he s a egies (S1) was de ined o imp o e he esul s
o he SHEPWM o all he ha monics ha a e no ze oed.
A second s a egy (S2), has been also in oduced in o de o
educe as much as possible he il e equi emen s o low
o de ha monics abo e he maximum limi imposed by he
g id code.
The simula ion and expe imen al esul s show ha he
maximum ou pu alues o he ha monics using he SHMPWM
echnique up o 19 h a e below he limi s imposed by he
applied g id codes. These ha monics a e elimina ed using
SHEPWM. The e o e, hese ha monics do no need o be
il e ed using bo h echniques. On he o he hand, he non-
elimina ed ha monics ob ained using SHEPWM ha e much
highe alues compa ed wi h hose ob ained using he SHM-
PWM echnique using S1. This ac leads o a educ ion in
he maximum powe suppo ed by he elemen s o he uned
il e s o be used. The consequence is a signi ican educ ion in
cos , size and weigh o he il e ing sys em equi ed o ul il
he g id codes. Finally, he esul s ob ained o s a egy S2
show ha any il e ing shape can be applied o de e mine he
swi ching angles o he SHMPWM echnique. S2 objec i e
was o achie e a g ea educ ion o non-elimina ed low o de
ha monics and his goal has been eached. Expe imen al esul s
alida ing he p oposed concep s a e included.
ACKNOWLEDGMENT
The au ho s g a e ully acknowledge inancial suppo p o-
ided by he Spanish Minis y o Science and Technology
unde p ojec TEC2006-03863 and by he Andalusian Go e n-
men Resea ch Council unde p ojec EXC/2005/TIC-1172.
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O lando (USA).
Ja ie Napoles was bo n in Se ille in 1978. He
ob ained he Telecommunica ions Enginee deg ee
om he Uni e si y o Se ille, Spain, in 2005. He is
cu en ly pu suing he PhD deg ee in elec ical engi-
nee ing a he Powe Elec onics G oup, Uni e si y
o Se ille. In 2005, he joined o he Depa men o
Elec onic Enginee ing, Se ille Uni e si y, wo king
on R+D p ojec s. His in e es s include he de elop-
men o echniques and algo i hms o imp o e he
ene gy quali y om u ili y g id specially ocused o
ha monic con en implemen ed on FPGA.
Jose I. Leon (S’04, M’07) was bo n in C´
adiz,
Spain, in 1976. He ecei ed he B.S. and M.S.
and PhD deg ees in elecommunica ions enginee ing
om he Uni e si y o Se ille (US), Spain, in 1999,
2001 and 2006 espec i ely. In 2002, he joined he
Powe Elec onics G oup, US, wo king in R&D
p ojec s. Cu en ly, he is an Associa e P o esso wi h
he Depa men o Elec onic Enginee ing, US. His
esea ch in e es s include elec onic powe sys ems,
modeling, modula ion and con ol o powe con e -
e s and indus ial d i es.
Ramon Po illo (S’06) was bo n in Se ille, Spain,
in 1974. He ecei ed he Indus ial Enginee deg ee
om he Uni e si y o Se ille (US), Se ille, Spain,
in 2002. He is cu en ly wo king owa d he Ph.D.
deg ee in elec ical enginee ing in he Powe Elec-
onics G oup, US. In 2001, he joined he Powe
Elec onics G oup, US, wo king in R+D p ojec s.
Since 2002, he has been an Associa e P o esso
wi h he Depa men o Elec onic Enginee ing, US.
His esea ch in e es s include elec onic powe sys-
ems applied o ene gy condi ioning and gene a ion,
powe quali y in enewable gene a ion plan s, applica ions o uzzy sys ems
in indus y and wind a ms, and modeling and con ol o powe -elec onic
con e e s and indus ial d i es.
Leopoldo G. F anquelo (M’84, SM’96, F’05) was
bo n in M´
alaga, Spain. He ecei ed he M.Sc. and
Ph.D. deg ees in elec ical enginee ing om he
Uni e si y de Se ille (US), Se ille, Spain in 1977
and 1980 espec i ely. His cu en esea ch in e es
lies on modula ion echniques o mul ile el in e -
e s and i s applica ion o powe elec onic sys ems
o enewable ene gy sys ems. He was he Vice-
P esiden o he Indus ial Elec onics Socie y (IES)
Spanish Chap e (2002 - 2003), membe a La ge o
he IES AdCom (2002 - 2003). He was he Vice-
P esiden o Con e ences o he IES (2004 - 2007), in which he has also
been a Dis inguished Lec u e since 2006. He has been an Associa ed Edi o
o he IEEE T ansac ions on Indus ial Elec onics since 2007. Since Janua y
2008 he is P esiden Elec o IEEE Indus ial Elec onics Socie y.
Miguel A. Agui e (M’97) was bo n in Mad id,
Spain in 1963. He ob ained he Mas e deg ee in
1991, in Elec ical and Elec onic Enginee ing by
he Uni e si y o Se illa, Spain. He ob ained he
PhD deg ee in 1994 in he same Uni e si y. He
is cu en ly eaching digi al mic oelec onics in he
Elec onic Enginee ing Depa men o he Uni e si y
o Se illa, as Assis an P o esso . He is he au ho
o mo e han 10 publica ions in he IEEE. He made
his hesis in algo i hm and heu is ics o placemen
and ou ing in eg a ed, and cu en ly he is wo king
in ools o dependable design o in eg a ed ci cui s.