Citations refer to the original publication, not to a Scieee localized version.
García García, H., Boo Alvarez, J., Vinuesa Sanz, G., González Ossorio, Ó., Sahelices Fernández, B., Dueñas Carazo, S., Castán Lanaspa, M. H., Bargalló González, M., Campabadal Segura, F., & Valladolid, U. D. (2021). Influences of the temperature on the electrical properties of HfO2-based resistive switching devices. MDPI. https://doi.org/10.3390/electronics10222816
García García, Héctor, et al. Influences of the temperature on the electrical properties of HfO2-based resistive switching devices. MDPI, 2021. https://doi.org/10.3390/electronics10222816.
García García, Héctor, Jonathan Boo Alvarez, Guillermo Vinuesa Sanz, Óscar González Ossorio, Benjamín Sahelices Fernández, Salvador Dueñas Carazo, María Helena Castán Lanaspa, Mireia Bargalló González, Francesca Campabadal Segura, and Universidad de Valladolid. Influences of the temperature on the electrical properties of HfO2-based resistive switching devices. MDPI, 2021. https://doi.org/10.3390/electronics10222816.
García García, H. et al. (2021) Influences of the temperature on the electrical properties of HfO2-based resistive switching devices. MDPI. Available at: https://doi.org/10.3390/electronics10222816.
H. García García et al., “Influences of the temperature on the electrical properties of HfO2-based resistive switching devices,” MDPI, 2021, doi: 10.3390/electronics10222816.
@misc{garciagarcia2021influences,
author = {García García, Héctor and Boo Alvarez, Jonathan and Vinuesa Sanz, Guillermo and González Ossorio, Óscar and Sahelices Fernández, Benjamín and Dueñas Carazo, Salvador and Castán Lanaspa, María Helena and Bargalló González, Mireia and Campabadal Segura, Francesca and Valladolid, Universidad de},
title = {Influences of the temperature on the electrical properties of HfO2-based resistive switching devices},
year = {2021},
publisher = {MDPI},
doi = {10.3390/electronics10222816},
url = {https://doi.org/10.3390/electronics10222816}
}
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