Jou nal o Enginee ing Science Vol. XXXII, no. 2 (2025), pp. 35 - 45
Fascicle Elec onics and Compu e Science ISSN 2587-3474
Topic Mic oelec onics and Nano echnologies eISSN 2587-3482
Jou nal o Enginee ing Science June, 2025, Vol. XXXII (2)
h ps://doi.o g/10.52326/jes.u m.2025.32(2).03
UDC 539.2:543.42:621.3.049.77
IN-DEPTH PROPERTIES ANALYSIS OF ZnAl2O4/ZnO
MICRO-NANOSTRUCTURES
C is ian Lupan *, ORCID: 0000-0003-2268-6181
Technical Uni e si y o Moldo a, 168, S e an cel Ma e Bl d., Chisinau, Republic o Moldo a
* Co esponding au ho : C is ian Lupan, c is ian.[email p o ec ed]
Recei ed: 04. 08. 2025
Accep ed: 05. 14. 2025
Abs ac . This manusc ip p esen s cha ac e iza ion o ZnAl2O4/ZnO mic o-nanos uc u es o
hei mo phological, chemical, s uc u al and sensing p ope ies. The ZnO mic o-
nanos uc u es ob ained using lame anspo syn hesis we e co e ed wi h ZnAl2O4 nanodo s
by chemical app oach. Mo phological, chemical and s uc u al p ope ies ha e been
in es iga ed using SEM, EDX and XRD, espec i ely. Scanning elec on mic oscopy
in es iga ion shows he o ma ion o mic o-nanos uc u es o di e en mo phologies, namely
e apods and nanowi es, co e ed wi h nanodo s. The EDX s udy e ealed he chemical
composi ion o he mic o-nanos uc u es, con i ming he p esence o Al on he mic o-
nanos uc u es’ su aces oo. The XRD pa e n o he s udied mic o-nanos uc u es shows he
p esence o ZnO and ZnAl2O4 c ys alline phases in he g own ma e ial. A single ZnAl2O4/ZnO
nanos uc u e was in eg a ed in o a de ice by FIB/SEM and es ed o a se ies o gases a
di e en ope a ing empe a u es, demons a ing selec i i y o 100 ppm hyd ogen gas and
esponse alue o ~1.2 up o ~3.65 a 20 °C and 150 °C, espec i ely. A sensing mechanism
o hyd ogen gas was p oposed, in ol ing ee elec ical cha ge ans e be ween ZnO wi e
and ZnAl2O4 nanodo s. Based on he knowledge gained, op imiza ion o hyd ogen gas senso s
using he me hods and nanoma e ials p esen ed he ein is en isioned.
Keywo ds: nanodo s, ene gy-dispe si e X- ay spec oscopy, scanning elec on mic oscope, Rigaku
X- ay di ac ion, spinel, e na y, ZnAl2O4, gas senso .
Rezuma . În aceas ă luc a e sun p ezen a e p op ie ățile mo ologice, chimice, s uc u ale
și senzo iale ale mic o-nanos uc u ilo ZnAl2O4/ZnO. Mic o-nanos uc u ile de ZnO obținu e
p in me oda sin ezei p in anspo de lacă ă au os acope i e cu nanopunc e de ZnAl2O4
p in me oda chimică. P op ie ățile mo ologice, chimice și s uc u ale au os in es iga e
u ilizând SEM, EDX și XRD. In es igația p in mic oscopie elec onică de scana e a a ă
o ma ea de mic o-nanos uc u i de di e i e mo ologii, și anume e apozi și nano i e,
acope i e cu nanopunc e. S udiul EDX a ele a compoziția chimică a mic o-nanos uc u ilo ,
con i mând p ezența Al și pe sup a ețele mic o-nanos uc u ilo . Di ac og ama XRD a
mic o-nanos uc u ilo s udia e a a ă p ezența azelo c is aline ZnO și ZnAl2O4 în ma e ialul
obținu . P in in e mediul FIB/SEM a os in eg a ă o singu ă nanos uc u ă ZnAl2O4/ZnO în -
un dispozi i și es a ă la o se ie de gaze la di e i e empe a u i de ope a e, demons ând
selec i i a e la 100 ppm hid ogen cu aloa ea ăspunsului de ~1.2 la 20 °C până la ~3.65 la
150 °C. A os p opus un mecanism de de ecție a hid ogenului, ca e implică ans e ul
36 C. Lupan
Jou nal o Enginee ing Science June 2025, Vol. XXXII (2)
sa cinilo elec ice libe e din e i ul de ZnO și nanopunc ele de ZnAl2O4. Pe baza ezul a elo
obținu e, se p econizează op imiza ea senzo ilo de hid ogen u ilizând me odele și
nanoma e ialele p ezen a e.
Cu in e-cheie: nanopunc e, spec oscopie cu aze X cu dispe sie de ene gie, mic oscop elec onic
cu scana e, di acție de aze X Rigaku, spinel, e na , ZnAl2O4, senzo de gaz.
1. In oduc ion
Me al oxides (CuO, ZnO, MoO3, In2O3, e c.) a e a g oup o ma e ials ha can be used in a ious
applica ions, due o hei p ope ies and a ious me hods o syn hesis [1–6]. Fo sensing
applica ions, a g ea in e es is in de eloping de ices capable o de ec ing eliably and
accu a ely a a ge gas in ambien condi ions and mix u es o gases [2]. P is ine
semiconduc o me al oxides lack selec i i y, high esponse and equi e high ope a ing
empe a u es de ices [7]. These d awbacks can be imp o ed by ine uning he ma e ial
cha ac e is ics and pe o mances ia addi i es, c ys alline phase con ol o mixing di e en
ma e ials [7].
ZnO can be used o di e se ypes o applica ions, due o a mul i ude o mo phology
and cos -e icien me hods o ob aining [3,8]. Conside ing i s p ope ies (bandgap ~3.37 eV,
chemical and he mal s abili y, high mobili y o elec ons, la ge exci on binding ene gy ~60
meV, e c.), zinc oxide can be used o sensing applica ions, such as UV and gas senso s [9-11].
P e ious esul s showed ha pu e ZnO has low selec i i y and high wo king empe a u es,
showing esponse o a wide ange o VOC apo s ( o maldehyde, benzene, ace one, e hanol,
me hanol, e c.) a 200 – 400 °C [11,12]. Di e en me hods o imp o e sensing de ices based
on his ma e ial we e epo ed be o e, including doping [10], unc ionaliza ion [11,13],
o ma ion o junc ions [8,9,14], and o he e os uc u es [15] e c.
Oxide spinel compounds (AB2O4) can be used o a ious ypes o applica ions,
including gas sensing [16]. Fo example, Zn2SnO4 was used as e hanol, ace one and ni ogen
dioxide senso a ope a ing empe a u es o 200-400 °C [17]. A ca bon monoxide senso
based on ZnCo2O4 was p esen ed be o e, capable o de ec ing 300 ppm o es gas a 200 °C
[18]. Lowe ing he wo king empe a u e o senso s is an impo an ask in dec easing powe
consump ion and complexi y o de ices [19].
ZnAl2O4 (bandgap ~3.8 eV) is a p omising ma e ial o use in di e en applica ions, as
ca alys , op oelec onic, e c., due o i s he mal s abili y, elec onic and chemical p ope ies
[16,20–22]. The e a e a ious me hods o ob aining spinel ype me al oxide nanos uc u es
such as hyd o he mal, co-p ecipi a ion, sol-gel, biological, calcina ion e c. [16,21-23].
Ano he me hod o syn hesizing ZnAl2O4 is he solu ion combus ion syn hesis me hod,
ob aining sphe ical and well c ys alline pa icles [24]. P e ious wo ks showed he possibili y
o using ZnAl2O4 o ZnO/ZnAl2O4 combina ion as sensing ma e ial o di e en ypes o gases:
hyd ogen, p opane, ca bon monoxide, e c. [16,22,25,26].
Hyd ogen is a e sa ile gas ha can be used in a ious applica ions om au omo i e,
ma e ial syn hesis, hea ing, up o ea men o diseases [22,27]. Due o i s explosi e na u e
and he lack o colo , odo and as e, which makes i di icul o de ec by human senses, his
gas poses a signi ican haza d du ing i s use and s o age, leading o he necessi y o small,
accu a e and eliable de ices ha a e capable o de ec ing i [28].
The main goal o his wo k is o p esen a me hod o ob aining ZnAl2O4/ZnO mic o-
nanos uc u es and o s udy in de ail i s p ope ies, in o de o use his ma e ial combina ion
In-dep h p ope ies analysis o ZnAl2O4/ZnO mic o-nanos uc u es 37
Jou nal o Enginee ing Science June, 2025, Vol. XXXII (2)
as sensing ma e ial. Mo phological, chemical, s uc u al and sensing p ope ies ha e been
in es iga ed in de ail, wi h he esul s summa ized in his pape .
2. Ma e ials and Me hods
Zinc oxide (ZnO) mic o-nanos uc u es ob ained by lame anspo syn hesis (FTS)
me hod we e used as base ma e ial, using Zn me al mic opa icles as p ecu so and poly inyl
bu y al powde as a sac i icial polyme , wi h he p ocess desc ibed in de ails in pape [29].
Chemical me hod was used o co e ZnO wi h zinc alumina e (ZnAl2O4), using aluminum
ace a e basic hyd a e (AlC4H7O5·H2O, pu i y >98%) mixed wi h dilu ed e hanol (100%) in a
glass con aine as p ecu so s, wi h he p ocess desc ibed in de ail in wo k [16]. E hanol was
e apo a ed by placing he sample on a pla e hea ed o 90 °C o 14h. A he end he
nanos uc u es we e he mally annealed on qua z subs a e a 1000 °C o 3h in ai .
The mo phology and chemical composi ion o ob ained mic o-nanos uc u es was
s udied using scanning elec on mic oscope (SEM) and ene gy-dispe si e X- ay spec oscopy
(EDX) using Zeiss Sup a 55VP. S uc u al p ope ies ha e been in es iga ed using Rigaku X-
ay di ac ion (XRD).
In o de o ob ain elec ical de ices, a single ZnAl2O4/ZnO nanos uc u e was placed
on a Si/SiO2 (525 µm/800 nm) subs a e wi h wo p epa e ned C /Au (11 nm/170 nm)
elec odes and connec ed using ocused ion beam scanning elec on mic oscope (FIB-SEM,
FEI Helios Nanolab 600) o deposi ing P con ac s [30,31].
Gas sensing and elec ical p ope ies o he de eloped de ices we e in es iga ed using
wo-p obe app oach and a Kei hley 2400 sou ce me e , con olled ia LabView so wa e [31].
Samples we e es ed o a se ies o gases wi h concen a ion o 100 ppm a di e en ope a ing
empe a u es om oom empe a u e (20 °C) up o 150 °C. The ela i e humidi y was
moni o ed and con olled a 10% du ing all measu emen s.
The gas esponse (S) was de e mined using he a io o cu en in ai (Iai ) and du ing
gas exposu e (Igas):
𝑆𝑆=𝐼𝐼𝑔𝑔𝑔𝑔𝑔𝑔
𝐼𝐼𝑔𝑔𝑎𝑎𝑎𝑎 (1)
3. Resul s and discussion
SEM was used o in es iga e mo phological p ope ies o ob ained mic o-
nanos uc u es using FTS and chemical me hod, wi h he esul s p esen ed in Figu e 1. In
Figu e 1a and 1b a e shown low and high magni ica ion SEM images o as-g own ZnO,
obse ing in e connec ed nanos uc u es, namely e apods and nanowi es, wi h a ious
sizes. In e connec ed nanos uc u es o indi idual e apod/nanowi e can be po en ially used
o sensing de ices used o ul a iole ligh o gas sensing [29,32].
The w inkles isible on he ZnO su ace a high magni ica ion (Figu e 1b) a e due o
he high empe a u e o 900 °C du ing lame anspo syn hesis [23]. The e apod a m
diame e s, de e mined om Figu e 1b, is ~0.5 – 2.5 µm. P e ious s udies using ZnO ob ained
ia FTS showed ha he syn hesis empe a u e has a majo e ec on he size and diame e
o he ob ained nanos uc u es [32].
Figu e 1c ep esen s highe magni ica ion SEM images o ZnAl2O4/ZnO mic o-
nanos uc u es ob ained using chemical me hod ollowed by 3h he mal annealing a 1000
°C, obse ing ha mic o-nanos uc u es ha e e apodal o nanowi es mo phology wi h
a ious diame e s and leng hs. Diame e o nano-mic os uc u es, de e mined om Figu e 1c,
is ~0.5 – 2.5 µm, which is simila o as-deposi ed ZnO, showing ha 3h annealing a 1000 °C
38 C. Lupan
Jou nal o Enginee ing Science June 2025, Vol. XXXII (2)
has no isible e ec on he size a e ini ial deposi ion using FTS. The in es iga ed e apods
and nanowi es ha e highe su ace oughness compa ed o ZnO s uc u es. Small nanodo s
o ZnAl2O4 a e isible on he su ace o deposi ed mic o-nanos uc u es a e he mal
annealing (see Figu e 1c).
a)
b)
c)
igu e 1. SEM images o : a) and b) ZnO mic o-nanos uc u es a low and high
magni ica ion; c) ZnAl2O4/ZnO mic o-nanos uc u es annealed a 1000 °C o 3 h.
Using high-magni ica ion SEM image and mic oscope so wa e ools, he size o he
deposi ed ZnAl2O4 nanodo s was de e mined, as p esen ed in Figu e 2. The a e age nanodo
size is ~65-75 nm and a e sp ead andomly on he su ace o he nanowi e. The nanodo s size
is simila o ZnAl2O4 nanoc ys als, wi h g ain size o ~50 nm, epo ed in p e ious wo k [21].
a)
b)
Figu e 2.
SEM image o su ace o ZnAl2O4/ZnO mic o-nanos uc u es annealed a 1000 °C
o 3h in ai and measu ed a di e en magni ica ions: a) 200 nm scale ba ; and b) 100 nm
scale ba .
In-dep h p ope ies analysis o ZnAl2O4/ZnO mic o-nanos uc u es 39
Jou nal o Enginee ing Science June, 2025, Vol. XXXII (2)
EDX mapping was used o in es iga e he chemical p ope ies o g own mic o-
nanos uc u es in a a ge a ea (Figu e 3a). EDX esul s a e p esen ed in Figu e 3b-d, de ec ing
h ee elemen s: Zn, O and Al, dis ibu ed on he su ace o sample.
a)
b)
c)
d)
Figu e 3.
EDX mapping o ZnAl
2
O
4
/ZnO mic o-nanos uc u es annealed a 1000 °C o 3h:
a) scanned a ea; b) dis ibu ion o Zn; c) dis ibu ion o O; d) dis ibu ion o Al.
A quan i a i e analysis o elemen s in he s udied ZnAl2O4/ZnO mic o-nanos uc u es
is p esen ed in Table 1, obse ing smalle p esence o Al (0.27 a .%), compa ed o Zn (50.18
a .%) and O (49.55 a .%).
Table 1
EDX esul s o a omic % o elemen s p esen in mic o-nanos uc u es
Elemen
A omic %
O
49.55
Al 0.27
Zn
50.18
The esul s o EDX scan o a single nanowi e a e p esen ed in Figu e 4, whe e Zn, O
and Al elemen s we e de ec ed. As can be seen, Zn and O a e p esen in he nanowi e, while
Al co e s measu ed su ace, due o he use o he chemical me hod o deposi ion.
40 C. Lupan
Jou nal o Enginee ing Science June 2025, Vol. XXXII (2)
a)
b)
c)
d)
Figu e 4.
EDX mapping o ZnAl
2
O
4
/ZnO single nanowi e annealed a 1000 °C o 3 h:
a) scanned a ea; b) dis ibu ion o Zn; c) dis ibu ion o O; d) dis ibu ion o Al.
EDX line scan a high magni ica ion whe e nanodo s a e isible, is p esen ed in Figu e
5. EDX line scan echnique allows chemical analysis o elemen s in he p edominance a ea
o be seen and measu ed. Y-axis p esen ing coun s o he chemical elemen o ela i e
concen a ion in he scanned line [33].
Figu e 5.
EDX line scan c ossing nanodo s o ZnAl
2
O
4
/ZnO single nanowi e annealed a
1000 °C o 3h.
In-dep h p ope ies analysis o ZnAl2O4/ZnO mic o-nanos uc u es 41
Jou nal o Enginee ing Science June, 2025, Vol. XXXII (2)
The p esence o indi idual elemen s o Zn, Al and O is con i med by measu emen ,
wi h a low quan i y o Al, as obse ed in in es iga ed mic o-nanos uc u es. Appea ance o Al
peak is coinciden wi h he posi ion o nanodo s, showing p esence o his elemen in hose
nanos uc u es, indica ing ha is mos ly p esen on he newly o med nanodo s.
XRD was used o con i m chemical composi ion, phase and s uc u e o he ob ained
mic o-nanos uc u es. The esul s o he XRD measu emen in he 60-80° 2θ alues a e
p esen ed in Figu e 6. De ec ed XRD e lec ions we e a ibu ed acco ding o s anda d ca ds
PDF #031161 (ZnAl2O4) and PDF #0361451 (ZnO).
Figu e 6.
XRD pa e n o ZnAl
2
O
4
/ZnO mic o-nanos uc u es annealed a 1000 °C o 3h in ai .
Mul iple ZnO and ZnAl2O4 di ac ions peaks we e a ibu ed in his ange, wi h highes
in ensi y o (103) and (112) ZnO planes. The highes in ensi y o ZnAl2O4 peak was obse ed
o (440) plane. Some o e lapping ZnO and ZnAl2O4 peaks we e de ec ed. No di ac ion peaks
co esponding o o he ma e ials we e de ec ed in he in es iga ed samples.
A e age c ys alli e size (D) o ZnAl2O4 (440) plane was de e mined using he Sche e
o mula [34]:
𝐷𝐷=𝑘𝑘·𝜆𝜆
𝛽𝛽·𝑐𝑐𝑜𝑜𝑐𝑐𝜃𝜃 (2)
whe e: k – shape ac o (k = 0.9), λ – wa eleng h o he adia ion (λ = 1.5406 Å), β –
ull-wid h hal maximum in ensi y o he e lec ion.
The calcula ed D is ~70.65 nm, which is simila o he measu ed ZnAl2O4 nanodo size
om he SEM images. The sensing de ice based on a single ZnAl2O4/ZnO nanos uc u e was
es ed o a se ies o gases wi h concen a ion o 100 ppm (ace one, n-bu anol, me hane,
e hanol, hyd ogen, ammonia and 2-p opanol) a di e en ope a ing empe a u es om 20 °C
up o 150 °C, wi h he esul s p esen ed in Figu e 7.
As can be seen, esponse was obse ed only o 100 ppm hyd ogen gas a all ope a ing
empe a u es, meaning ha senso is selec i e o his gas. Response alue (S) inc eased om
~1.2 up o ~3.65 wi h he ise o ope a ing empe a u e om 20 °C o 150 °C, espec i ely.
Gas esponse and selec i i y o hyd ogen o ZnAl2O4/ZnO based de ice can be
a ibu ed o he o ma ion o n-n he e os uc u e and use o P con ac s o he
nanos uc u e, which can ac as ca alys s oo [16,22]. Inc eased esponse a 100-150 °C
compa ed o oom empe a u e, can be a ibu ed o he p esence o mo e eac i e oxygen
species (O-) on he su ace o he ma e ial [22].
42 C. Lupan
Jou nal o Enginee ing Science June 2025, Vol. XXXII (2)
Figu e 7.
Gas esponse o a se ies o gases wi h concen a ion o 100 ppm a di e en
ope a ing empe a u es o de ice based on a single ZnAl2O4/ZnO nanos uc u e annealed
a 1000 °C o 3 h in ai .
In Figu e 8 is p esen ed schema ic ep esen a ion o p oposed hyd ogen gas sensing
mechanism o ZnAl2O4/ZnO based de ice. When he de ice is in ai a mosphe e (Figu e 8a),
oxygen species a e adso bed on he su ace o he ma e ial, in his case O- a 100-150 °C
[35,36]. An elec on low be ween ZnAl2O4 nanodo s and ZnO akes place, leading o highe
concen a ion o ee-elec ons in conduc ion band o ZnO, which in u n inc eases oxygen
co e age in ai en i onmen [16,37].
a)
b)
Figu e 8.
Schema ic ep esen a ion o p oposed sensing mechanism o de ice based on
single ZnO/ZnAl2O4 nanos uc u e: a) in ai and b) du ing H2 exposu e.
The ollowing eac ion du ing hyd ogen exposu e akes place wi h he oxygen species
on he su ace (Figu e 8b) [37]:
𝐻𝐻2+𝑂𝑂−→𝐻𝐻2𝑂𝑂+𝑒𝑒− (3)
The eac ion leads o he elease o H2O in he en i onmen and he cap u ed elec ons
o he conduc ion band, inc easing cu en . Fas e oxidizing p ocesses and inc eased esponse
du ing hyd ogen gas exposu e a e possible due o he ee cha ge ans e om ZnAl2O4 o
In-dep h p ope ies analysis o ZnAl2O4/ZnO mic o-nanos uc u es 43
Jou nal o Enginee ing Science June, 2025, Vol. XXXII (2)
ZnO, which was also p e iously epo ed by o he au ho s when adding di e en
nanopa icles on he su ace o he base ma e ial [16,38].
5. Conclusions
ZnO mic o-nanos uc u es ob ained using lame anspo syn hesis we e co e ed wi h
ZnAl2O4 nanodo s using chemical me hod, ollowed by annealing a 1000 °C o 3h in ai .
Mo phological in es iga ion shows he o ma ion o e apods and nanowi es, co e ed wi h
small nanodo s wi h ~65-75 nm diame e .
EDX s udy p esen ed chemical composi ion o he sample, con i ming he p esence o
Al, wi h a .% o ~0.27%. By compa ing EDX esul s om mul iple in e connec ed mic o-
nanos uc u es and single nanowi e, i was de ec ed ha Al co e s en i e su ace o he
sample, while Zn and O is mos ly p esen in he nanowi e/ e apod. EDX line scan indica e
ha appea ance o Al peak is coinciden wi h he posi ion o nanodo s, showing i s p esence
on he newly o med nanodo s.
The XRD pa e n o he in es iga ed mic o-nanos uc u es shows p esence o ZnO and
ZnAl2O4 in he sample, by a ibu ing peaks acco ding o PDF ca ds o he ma e ials.
Sensing s udy p esen ed insigh s on he beha io o he ZnAl2O4/ZnO based de ice o
a se ies o es gases a di e en ope a ing empe a u es, obse ing selec i i y o 100 ppm
hyd ogen and a esponse alue o ~1.2 up o ~3.65 a ope a ing empe a u es o 20 °C and
150 °C, espec i ely. A sensing mechanism was p oposed, based on he ee cha ge ans e
be ween ZnO and ZnAl2O4.
The esul s ob ained and p esen ed in his s udy can be used o u he enhancemen
o hyd ogen gas sensing p ope ies o de ices based on his ma e ial, which can be po en ially
in eg a ed and used in pe sonal, indus ial, en i onmen al moni o ing de ices.
The esul s we e p esen ed and discussed a he 13 h In e na ional Con e ence on
Elec onics, Communica ions and Compu ing (IC ECCO 2024), Chisinau, Republic o Moldo a,
17-18 Oc obe , 2024.
Acknowledgmen s: This pape was suppo ed by p ojec code 24.80012.5007.15TC by
Na ional Agency o Resea ch and De elopmen o Moldo a a Technical Uni e si y o
Moldo a.
C is ian Lupan g a e ully acknowledges: Kiel Uni e si y, Ge many, Depa men o
Ma e ials Science, Chai o Mul icomponen Ma e ials and Chai o Func ional
Nanoma e ials; PSL Uni e si é, Chimie-Pa isTech IRCP, Pa is, F ance; Twen e Uni e si y,
Enschede, he Ne he lands o collabo a ion in 2023 – 2025 and Technical Uni e si y o
Moldo a o cons an suppo . C. Lupan would like o exp ess special app ecia ion and hanks
o Ph.D. scien i ic ad ise P o esso , d . hab. A u Buzdugan (TUM) and assoc. p o . d . Nicolai
Ababii (TUM) o hei suppo , commen s and discussions on his wo k.
Con lic s o In e es : The au ho decla es no con lic o in e es .
Re e ences
1. Wang, C.; Yin, L.; Zhang, L.; Xiang, D.; Gao, R. Me al oxide gas senso s: Sensi i i y and in luencing ac o s.
Senso s 2010, 10, pp. 2088–2106.
2. Sch öde , S.; Ababii, N.; B înză, M.; Maga iu, N.; Zimoch, L.; Boddulu i, M. T.; S unskus, T.; Adelung, R.; Faupel,
F.; Lupan, O. Tuning he Selec i i y o Me al Oxide Gas Senso s wi h Vapo Phase Deposi ed Ul a hin
Polyme Thin Films. Polyme s (Basel) 2023, 15, 524.
3. Mish a, Y. K.; Kaps, S.; Schucha d , A.; Paulowicz, I.; Jin, X.; Gedamu, D.; Wille, S.; Lupan, O.; Adelung, R.
Ve sa ile ab ica ion o complex shaped me al oxide nano-mic os uc u es and hei in e connec ed
