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EDMS NO.
3328311
VALIDITY
Released
REV.
1.0
DOI: 10.5281/zenodo.17287955
RADNEXT T ansna ional Access Summa y Repo
P ojec i le
La chup sc eening wi h he dose- a e es ing
P ojec TA iden i ie
TA10-354
Gene al applica ion
Tes me hods de elopmen
Type o es
SEE
G oup leade , Ins i u e
Tomasz Rajkowski, NCBJ
Co-au ho s, Ins i u es
And zej Dziedzic, NCBJ
G zego z Szaciłowski, NCBJ
Da e(s) o he expe imen
19-21/11/2024
Facili y
UCL
Amoun o access g an ed
(uni o access: 1h)
16
Objec i es o he expe imen s
In he p ojec we aimed o collec high-quali y da a om bo h hea y-ion and p omp -dose es s o
acili a e p edic ion o hea y-ion induced Single E en La chups by means o p omp -dose es ing.
I adia ing mul iple componen ypes om a single amily and manu ac u e would help exclude
manu ac u ing echnology a ia ions, e ining he ini ial model linking la chup es esul s unde hea y
ions and p omp -dose.
This epo conce ns he hea y-ion es esul s.
Expe imen es epo
1. In oduc ion
We chose 4 ADC ypes om he Nisshinbo manu ac u e o pe o m Single E en La chup (SEL)
cha ac e iza ion wi h hea y ions: NA2200BDAE2S, NA2202NBAE2S, NA2203NBAE2S and
NA2204NBAE2S. These componen s we e no es ed wi h hea y ions ye , bu we expec ed o obse e
SEL, as i is common in CMOS ADCs.
Due o p oblems wi h sample p epa a ion, we managed o pe o m es s on only one componen :
NA2200BDAE2S. Chemical e ching was oo agg essi e o pins o QFN packages, and he
componen s in hese packages we e no possible o solde o he PCB boa d. See igu es 1 and 2
below wi h example samples pho os. In his case, he es objec i e was changed o cha ac e ize he
a ailable DUT NA2200BDAE2S in a ious bias condi ions.
EDMS 3328311 .1 s a us In Wo k access Res ic ed
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EDMS NO.
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2. Tes se up and es condi ions
The es se up consis ed o he powe supply uni , cu en moni o ing and display o he e u n cu en
wi h he oscilloscope, and cu en limi e . The dela ching and SEL coun ing was pe o med manually.
The de ice was no des oyed du ing he SEL wi h cu en limi ing used. Tes was pe o med in
acuum.
The powe supply ange o he NA2200BDAE2S is 2.7 o 5.5 V. The DUT was es ed in he ull supply
ange wi h hea y ions wi h LETs in ange om 20.4 MeV.cm2/mg o 88.39 MeV.cm2/mg. The DUT was
no pe o ming any speci ic ope a ions du ing he i adia ions, bu only powe ed up. The empe a u e o
he DUT was no con olled du ing he i adia ion.
3. Tes esul s
Summa y o he NA2200 hea y ions i adia ions is gi en in a able below.
Run#
LET
[MeV.cm2/
mg]
Supply
ol age [V]
Flux
[p/cm2/s]
Fluence
[p/cm2]
Numbe o
SELs
obse ed
Commen s
1.10
32.4
5.5
5E+3
1E+7
185
1.11
32.4
2.7
5E+3
1E+7
0
No SEL, bu he cu en d aw was changing
be ween 0.7/1.0/1.4/2.5 mA alues andomly
(bo h inc easing and dec easing) du ing he
i adia ion.
1.12
32.4
4.1
5E+3
3E+6
0
Random changes o he cu en in ange up
o 11 mA, simila ly o un 1.11.
1.13
32.4
4.1
1.5E+4
1E+7
12
No SEL was obse ed un il he luence o
4.5E+6, hen he 100 mA mic o-SEL was
obse ed and soon a se ie o 12 SELs.
1.14
32.4
4.8
1.5E+4
1E+7
117
SELs obse ed a he in se ies.
1.15
32.4
4.8
5E+3
1E+7
61
Dec eased lux wi h ega ds o he p e ious
un esul ed in dec eased numbe o SELs
obse ed.
1.18
20.4
5.5
1.6E+4
1E+7
0
Random changes o he cu en in ange up
o 17 mA, simila ly o uns 1.11 and 1.12.
1.19
46.1
5.5
5E+3
2E+6
69
1.20
46.1
5.5
1E+3
1E+6
32
1.21
46.1
4.8
1.3E+3
1.5E+6
20
2.2
46.1
4.1
5E+3
1E+7
6
Simila ly o un 1.13, he 100 mA mic oSEL
Figu e 1: NA2200BDAE2S sample wi h he
package chemically e ched.
Figu e 2: NA2204NBAE2S sample wi h he
package chemically e ched and pins damaged.
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EDMS NO.
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was obse ed a luence le el o 1E+6, hen
6 SELs a e obse ed un il he luence o
2E+6, and no mo e SELs a e obse ed la e
un il he inal luence o 1E+7 is eached.
2.4
62.5
5.5
1E+3
1.65E+6
50
2.5
62.5
4.8
1E+3
2.48E+6
50
2.6
62.5
4.1
5E+3
1E+7
1
2.7
72.2
5.5
1E+3
1.05E+6
51
2.8
72.2
4.8
1E+3
2.8E+6
51
2.9
72.2
4.1
5E+3
4.2E+6
51
2.10
88.4
4.1
5E+3
4.28E+6
51
2.11
88.4
4.8
2E+3
9.1E+5
51
2.12
88.4
4.8
1E+3
1.59E+6
51
The lux was educed wi h ega ds o he
p e ious un, and he esul ing c oss sec ion
is lowe .
2.13
88.4
5.5
1E+3
8.6E+5
51
2.14
32.4
5.5
5E+3
1E+7
58
Al e na i e es me hod used: he DUT was
powe cycled each ime he mic oSEL (abo e
10 mA) o SEL a e obse ed, bu only SELs
(di ec su ges o 150 mA) a e coun ed.
2.15
32.4
4.8
5E+3
1E+7
8
Al e na i e es me hod (as desc ibed in un
2.14) used.
SELs we e no obse ed o he LET = 20.4 MeV.cm2/mg when he de ice was supplied wi h 5.5 V and
was no obse ed o he LET = 32.4 MeV.cm2/mg when he de ice was supplied wi h 2.7 V (i was he
only es pe o med o he 2.7 V condi ion, in ac he LET h eshold migh be e en highe ). The SEL
c oss-sec ion was measu ed and plo ed o he LET alues up o 88.4 MeV.cm2/mg, and o supply
ol age le els: 4.8 V and 5.5 V. The de ice has shown dependence o he SEL sensi i i y on he supply
ol age. The DUT expe ienced mo e han a housand SELs du ing he es campaign, and he elec ical
pa ame e s sugges ha he SELs did no des oy he DUT.
Two speci ic phenomena we e obse ed in ou es s: mic o-SELs p omo ing SELs and SEL c oss-
sec ions a ying wi h he lux. The phenomena a e p obably esul ing om he es se up limi a ions (no
he mal con ol, ailu e o he de-la ching ci cui ).
4. Conclusions
The DUT has p e y s ong dependence o he SEL c oss sec ion om he ope a ing ol age. This
ea u e migh be used in u u e es s wi h o he beam ypes o compa e i he DUT esponse is changed
unde changed bias condi ions.
No SEL obse ed a 2.7 V and wi h 32.4 MeV.cm2/mg.
Howe e , he i adia ions we e no pe o med in he wo s -case empe a u e condi ions ( he chip was
no hea ed up).
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