A review on graphene and graphene composites for application in electromagnetic shielding

Vol.:(0123456789)
1 3
G aphene and 2D Ma e ials (2023) 8:59–80
h ps://doi.o g/10.1007/s41127-023-00065-3
REVIEW ARTICLE
A e iew ong aphene andg aphene composi es o applica ion
inelec omagne ic shielding
S e lanaJo ano ić1· Mi osla Huskić2· DejanKepić1· MuhammadYasi 3· KamelHaddadi4
Recei ed: 7 Sep embe 2023 / Re ised: 30 Sep embe 2023 / Accep ed: 4 Oc obe 2023 / Published online: 18 Oc obe 2023
© The Au ho (s) 2023
Abs ac
As wi eless solu ions o communica ion, in o ma ion, and sensing in mode n socie y, elec omagne ic wa es (EMWs)
ha e con ibu ed conside ably o he inc ease in he quali y o people’s e e yday li es. A he same ime, EMWs p oduce
elec omagne ic pollu ion, issues wi h elec omagne ic in e e ence (EMI), and adio equency (RF) signal leakage. These
ci cums ances lead o high demand o e icien EMI shielding ma e ials.
To design an EMI shielding p oduc , a comp omise mus be achie ed be ween he elec omagne ic shielding e iciency, he
hickness o shielding ma e ials, du abili y, mechanical s eng h, educed olume and weigh , and elas ici y. Due o i s abil-
i y o block EMWs, lexibili y, ligh weigh , and chemical esis i i y, g aphene has been iden i ied as a p omising candida e
ma e ial o e icien EMI shielding. He ein, we e iewed he s udies ha in es iga ed a ious g aphene-based composi es
as po en ial EMI shielding ma e ials, wi h a ocus on he composi es based on g aphene and sil e nanowi es due o hei
high EMI shielding e iciency, low p oduc ion p ice, and a o able mechanical p ope ies.
Keywo ds G aphene· G aphene oxide· Sil e nanowi es· Composi es· Elec omagne ic in e e ence shielding
1 In oduc ion
The apid de elopmen o echnology led o a la ge numbe
o elec onic de ices used in e e yday li e and p o essionally.
Sma phones and a ious sma gadge s became ine i able
pa s o mode n li e. These changes make ou li e mo e com-
o able. All hese elec onic de ices emi elec omagne ic
wa es (EWs) and lead o a new o m o mode n con ami-
na ion, named elec omagne ic pollu ion. EWs can cause
se ious issues as a esul o elec omagne ic wa e pollu ion
leading o elec omagne ic in e e ence (EMI), and in o ma-
ion leakage. De ices ha gene a e EMI a e hose ha ans-
mi , dis ibu e, o use elec ic ene gy. When EWs pene a e
be ween equipmen join s, hey can a ec he pe o mance
o di e en de ices, lead o damage o ins umen compo-
nen s, and e en ually educe he de ice’s li e ime. EMI could
also be dange ous o people wi h pacemake s and implan -
able ca dio e e –de ib illa o s (ICDs) [1–3]. Pa icula ly
impo an is p o essional exposu e o adio equency (RF)
elec omagne ic ields. Powe plan wo ke s, hose ope a ing
on medical ins umen s, wo ke s in he me al indus y, on
welding machines, and in elecommunica ion a e exposed o
his ype o elec omagne ic ield. Ex emely low- equency
elec omagne ic ields (ELF EMFs equency < 300Hz) a e
ubiqui ous. Su p isingly, hei e ec s on li ing o ganisms
a e poo ly unde s ood and subjec ed o deba e.
Se e al s udies linked he isk o childhood cance ,
pa icula ly leukemia, o ELF EMF exposu e [4–7] and
b ain cance s such as glioma [4]. Ch onic exposu e leads
o changes in neu onal ac i i y, a ec s long- e m po en ia-
ion in hippocampal CA1 egion, and shows an inhibi o y
e ec on he ampli ude o long- e m po en ia ion [5]. These
changes indica ed ha ELF EMF a ec s lea ning and mem-
o y. O he s udies associa e ELF EMF wi h sleep quali y,
* S e lana Jo ano ić
s e lanajo ano[email p o ec ed]
1 Vinča Ins i u e o Nuclea Sciences-Na ional Ins i u e
o  heRepublic o Se bia, Uni e si y o Belg ade, P.O.
Box522, 11000Belg ade, Se bia
2 Facul y o Polyme Technology, Oza e 19,
2380Slo enjG adec, Slo enia
3 Ca l Von Ossie zky Uni e si ä Oldenbu g, 26111Oldenbu g,
Ge many
4 CNRS, Cen ale Lille, Uni . Poly echnique Hau s-de-F ance,
UMR 8520 - IEMN - Ins i u d’Elec onique de
Mic oélec onique e de Nano echnologie – Lille, Uni . Lille,
59650Villeneu e-d’Ascq, F ance
60 G aphene and 2D Ma e ials (2023) 8:59–80
1 3
anxie y, and dep ession [6]. The s udy whe e 66 scien i ic
publica ions we e analyzed using a me a-analysis o obse -
a ional s udies in epidemiology (MOOSE) concluded ha
ch onic exposu e o EMFs ele a ed he isk o neu odegen-
e a i e diseases (amyo ophic la e al scle osis and Alzhei-
me ’s disease) by 10% [7]. O he s udies showed ha ELF
EMFs induce s ess eac ions, causing mo phological as
well as physiological al e a ions in subjec ed o ganisms [8].
Occupa ional exposu e o ELF EMFs was no connec ed o
an inc eased isk o malignan lymphoma [9]. Jalilian e al.
analyzed he cases o di e en lymphoma egis e ed be ween
1961 and 2005 in Finland, Iceland, No way, and Sweden,
and he p e alence was simila o he popula ion ha was
no exposed o ELF EMFs. While sho - e m exposu e does
no a ec co isol le els in humans [10, 11], i s sec e ion
pa e n is changing and i is ela ed o he ield in ensi y in
he case o long- e m exposu e [12]. As a majo glucoco -
icoid ho mone, co isol le el was ollowed in he blood o
wo ke s occupa ionally exposed o 1–20yea s. This s udy
e ealed a change in he co isol sec e o y pa e n. The sup-
p essi e e ec o ELF EMFs on he le els o ch omog anin
A, a ma ke o neu oendoc ine umo s and s ess, was also
epo ed [13]. Scien is s a e disag eeing ega ding he e ec s
on human heal h, due o a lack o clea cause–e ec connec-
ion. Bu ELF EMF ce ainly con ibu es o ROS p oduc ion
and oxida i e s ess and many o he diseases [14].
Thus, he need o ma e ials ha can p o ec people bu
also ins umen s om bo h EWs and in e e ence is inc eas-
ing along wi h echnological de elopmen . Ma e ial wi h
EMI shielding e iciency (EMI SE) o 20dB is app op ia e
o comme cial applica ions. Thick and dense conduc i e
ma e ials a e e icien in EMI shielding. A highly e ec i e
EMI shielding ma e ial is me al. Bu , me als in he o m o
oil o ibe s a e igid, wi h poo elas ici y, hey a e no ans-
pa en , no good o wea able applica ions, and hey e lec
EWs leading o u he seconda y EWs pollu ion. Ano he
ma e ial is conduc i e polyme composi es (CPCs), which
a e ligh weigh , ha e good sealabili y, a e easy o mold,
a e ela i ely low cos , and ha e no magne ic in e e ence
[15–17]. Silicone ubbe also showed a good EMI pe o -
mance due o excellen high- and low- empe a u e s abili y,
wea he , and chemical esis ance [18, 19].
Fo he use in EMI shielding, he new ma e ial should be
ligh weigh , hin, elas ic, du able, lexible, chemically s able,
economically accep able, p oduced by eco- iendly p oce-
du e, and esis i e o mois u e, in o de o be applicable in
he space and ai c a indus y, mo o ehicles, po able and
wea able elec onic de ices.
One o he p omising ma e ials o EMI shielding is g a-
phene, i s de i a es, and composi es. Due o i s lexibili y,
ligh weigh , elec ical conduc i i y, and chemical esis i -
i y, g aphene a ac ed la ge a en ion as a shielding ma e-
ial [20]. G aphene was disco e ed by Geim and No ocelo
using adhesi e ape o mechanically ex olia e g aphi e and
isola ed g aphene o he i s ime in 2004 and won a Nobel
p ize in 2010 o his disco e y [21]. F om high-quali y
g aphene p oduced by chemical apo deposi ion (CVD),
elec ochemically ex olia ed g aphi e, o mo e de ec i e
g aphene wi h poo e elec ical conduc i i y p oduced by
he educ ion o g aphene oxide, g aphene showed di e en
p ope ies as well as cos . In his e iew, we will analyze
g aphene p oduced using di e en me hods, and i s com-
posi es o applica ion in EMI shielding add essing he mos
p omising app oaches o achie e desi ed shielding e iciency
(SE), conside ing bo h economic and ecological aspec s o
p oduc ion. Due o he olume o he wo k published in he
ield o elec omagne ic shielding, we es ic ed ou s udy o
g aphene, conside ing he ising in e es in his ma e ial in
EMW shielding. This ield has e ol ed d as ically in he las
decade, which c ea es a need o comp ehensi e bu clea
s udies unde s andable o esea che s ac oss di e en ields.
A la ge numbe o e iew pape s a e analyzing MXene, con-
duc i e polyme s, and g aphene-based composi es, while
only a ew e iew pape s explo e g aphene as EMI shield-
ing ma e ial [22–24]. In con as , his e iew pape ocuses
on he EMI shielding o g aphene and connec s i s s uc u al
cha ac e is ics wi h measu ed SE, and o composi es wi h
sil e nanowi es which g ea ly con ibu e o he e iciency
o g aphene shee o block EMWs.
2 EMI shielding
EM shielding is based on e lec ion, abso p ion, and mul iple
e lec ions [25, 26]. Shielding e iciency desc ibes how well
ma e ials block EMWs and i is exp essed in decibels—dB.
Highe alues o dB mean ha ma e ial is mo e e icien
in EMI shielding. The comme cial applica ion equi es a
minimum SE o 20dB, which is equi alen o he blocking
o 99% o inciden EMWs.
The o al shielding e iciency (SET) o a ma e ial is he
sum o e lec ion (SER), adso p ion (SEA), and mul iple
e lec ions (SEMR) shielding. EMWs a e cha ac e ized by
powe (P), elec ic (E), and magne ic ield (H) in ensi ies.
Thus, SET is de ined as he loga i hmic a io o he inciden
(Pi) o ansmi ed powe (PT) o elec omagne ic adia ion
acco ding o he ollowing ela ions (1) and (2):
whe e I—indica ed inciden , R— e lec ed, and T— ans-
mi ed componen o EWs [27]. The in e ac ion o he EM
wa es in he collision wi h di e en EMI shielding ma e ials
(1)
SE
T=10 log
P
I
PT
=20 log
E
I
ET
=20 log
H
I
HT
(2)
SET=SEA+SER+SEMR
61G aphene and 2D Ma e ials (2023) 8:59–80
1 3
is desc ibed in Fig.1, whe e e lec ion, abso p ion, and mul-
iple e lec ions a e p esen ed.
Elec ically conduc i e ma e ials such as me als a e mainly
e lec ing EWs when hey hi he su ace ich in elec ons and
he SER is ela ed o he a io be ween he conduc i i y (σ) and
pe meabili y (μ) o he ma e ial, acco ding o Eq.3.
While e lec ion is p ima y, he abso p ion o EMWs is a
seconda y mechanism o EM shielding. Ma e ials wi h mag-
ne ic o elec ical dipoles a e candida es o abso p ion shield-
ing which is ela ed o he ollowing equa ion:
whe e d is he hickness, and α is he a enua ion cons an
o he slab, espec i ely. Fo magne ic conduc i e ma e ials,
abso p ion is he dominan shielding mechanism and i is
di ec ly p opo ional o he pe mi i i y o he ma e ials [27].
The mul iple e lec ion is he p ocess du ing which EW
unde goes mul iple in e nal e lec ions due o inhomogenei y
and occu s be ween he in e ace laye s [28, 29]. This ype o
shielding is cha ac e is ic o hin ma e ials and happens when
EWs a e apped inside he bounda ies o ma e ials, whe e
hey ha e e lec ed again om one o ano he bounda y. The
SEMR can be calcula ed using he ollowing exp ession:
whe e d is he sample hickness and δ is he pene a ion
dep h. This ype o shielding is obse ed in po ous s uc-
u es, whe e hollows in he in e nal s uc u es become ac i e
(3)
SE
R=39.5 +10 log
𝜎
2 𝜋𝜇
∝𝜎∕
𝜇
(4)
SE
A=20 log
d
e
𝜎
=8.7d
√
𝜋𝜎 ∝d𝜎𝜇 ∝𝛼d
(5)
SE
MR =20 log
(
1−e
−2
d
𝛿
)
spo s o he sca e ing o EMWs and make SEMR simila
o he abso p ion o EMWs. The schema ic p esen a ion is
shown in Fig.1b.
The mos desi able shielding mechanism is abso p ion,
conside ing ha EMWs in ha case we e no emi ed back
in o he en i onmen . The highe he dB le el o EMI shield-
ing e ec i eness, he less ene gy is ansmi ed h ough he
shielding ma e ial. In EMI shielding heo y, when an EM
wa e impinges on a shielding ma e ial, he inciden powe
is di ided in o e lec ed, abso bed, and ansmi ed powe
and he co esponding powe coe icien s o abso bance
(A), e lec ance (R), and ansmi ance (T) a e such ha
R + T + A = 1. The ac ion o he abso bed EMWs is calcu-
la ed om he p e ious equa ion, A = 1 − R − T. In a ec o
ne wo k analyze (VNA), sca e ing pa ame e s S11 (o S22)
and S21 (o S12) a e measu ed o calcula e he e lec ance
and ansmi ance powe coe icien s, R = S112 and T = S122,
and he abso bance is indi ec ly de i ed om A = 1 − R − T.
Apa om hese coe icien s, o e alua e he e iciency o
EMI shielding ma e ials, he alues o wo mo e pa ame e s
we e conside ed: speci ic EMI shielding e ec i eness (SSE)
and absolu e e ec i eness (SSE/ hickness o ma e ial).
In he ecen pas , g aphene has become an in e es ing
shielding ma e ial due o i s elec ical p ope ies such as
high elec ical conduc i i y, and sa u a ion eloci y, good
mechanical p ope ies such as lexibili y and s eng h, bu
also esis i i y o co osion and chemical eagen s. Thus, in
only he las 5yea s he in e es in g aphene as EMI shield-
ing ma e ials la gely inc eased (Fig.2). Resul s o sea ching
he Scopus da abase using keywo ds “elec omagne ic in e -
e ence shielding” and “g aphene” showed ha in 2022 was
262, while jus 10yea s ago, he numbe o pape s published
wi h he same keywo ds was only 11.
Fig. 1 In e ac ion o EMWs
wi h ma e ials, abso p ion,
ansmission, and mul iple
e lec ions (a). EW inside o
lamella ma e ials (b), po ous
(c, d), and compac ma e ials
(e)
62 G aphene and 2D Ma e ials (2023) 8:59–80
1 3
Composi es based on g aphene oxide and sil e nanow-
i es (AgNWs) we e no explo ed widely as elec omagne ic
shielding ma e ial al hough hey seem like a e y e icien
shielding ma e ial wi h good mechanical p ope ies and
chemical ine ness. Table1 summa izes he mo phol-
ogy o g aphene and AgNWs, elec ical conduc i i y and
shee esis ance, and EMI SE alues o di e en compos-
i es. Resul s indica ed ha GO alone as well as in com-
posi e wi h AgNWs p oduces a good shielding ba ie . In
he u he pa , we a e explo ing s uc u al p ope ies as
well as he mechanism behind he shielding e ec s o hese
nanoma e ials.
2.1 G aphene andg aphene oxide, oms uc u e
andp ope ies oapplica ion inEMI shielding
2.1.1 G aphene analysis
G aphene is a 2D nanoma e ial composed only o C a oms
ha a e sp2 hyb idized. C a oms a e o ganized in he
6-membe ed so-called benzene ing. Each a om is co a-
len ly bonded o h ee neighbo ing ca bons, which lea es
one unpai ed elec on pe each C. O bi als o hese unpai ed
ones a e o e lapping c ea ing a π-cloud abo e and o e each
ing, while in g aphene, hese clouds om each benzene
ing c ea e a unique cloud whe e elec ons a eling eely.
This s uc u e makes g aphene a unique ma e ial conside ing
i s elec ical, mechanical, he mal, and chemical p ope ies
[46]. To s udy hese mos ly sp2 s uc u es and hei de i a es
such as g aphene oxide, he mos impo an echniques a e
Raman, Fou ie T ans o m in a ed, X- ay pho oelec on
spec oscopy, X- ay di ac ion, and o he s [47–56]. Typical
Raman, XPS, FTIR, and XRD spec a o g aphene and i s
oxidized de i a e, GO a e p esen ed in Fig.3. In he Raman
spec um o g aphene (Fig.3a), he mos in ense band is he
so-called g aphi ic o G band which s ems om in-plane
s a ching o sp2 bonded C a oms, i is loca ed usually a ound
1585 cm−1 [57, 58], while he 2D band is he second-o de
o e one o he G band and i s in ensi y and shape a e ela ed
o he numbe o he g aphene laye s, as p esen ed in he
le pa o Fig.3a showing decon olu ion o 2D band and
es ima ion o laye s numbe s [47]. In he Raman spec a o
GO, an addi ional band a ound 1380 cm−1 is p esen (de ec
o D-band) and i s in ensi y is co ela ed wi h de ec s in
g aphene s uc u e such as edges, he e oa oms, acancies,
and S one-Wale [59–62]. The a io be ween he in ensi y o
D and G bands (ID/IG) is p opo ional o he le el o s uc-
u al diso de and i is 0 o de ec - ee g aphene and om 0
o abo e 2 o highly de ec i e s uc u es such as GO [62].
The shoulde bands in he Raman spec a o he GO loca es
a ound D and G bands can be iden i ied by spec al decon-
olu ion [50], and hei posi ion is dependen on he oxygen
con en in GO o educed GOs, as p esen ed in Fig.3b.
Typical wide-scan XPS spec a o g aphene oxide show
peaks om C and O 1s [64–66], while analysis o hose
e eals he a % o each unc ional g oup in ma e ials [48]. In
Fig.3b, he emo al o oxygen-con aining unc ion g oups
a di e en empe a u es can be obse ed as an inc ease in
a % o sp2 C a oms, and lowe ing o C–OH, C–O–C, C=O/
HO–C=O, and C=O, as well as he enhancemen in he C/O
a io p esen ed in he uppe igh co ne . FTIR spec a a e
o en used o iden i y he p esence o unc ional g oups, bu
i does no gi e quan i a i e da a abou hei con en [67,
68]. Band assign o ca boxyl (–COOH) is usually a ound
1020 cm−1, epoxy (C–O–C) a 1243 cm−1, a oma ic sp2
(C=C) a 1544 cm−1, 1627 cm−1 om ca bonyl (C=O), and
om hyd oxyl (–OH) g oups band is loca ed a 3420 cm−1
[68]. XRD is a aluable ool o in es iga e g aphene-like
s uc u es and one example is p esen ed in Fig.3e. G aphi e
shows only one sha p peak a 2θ = 26.4° which co esponds
o he (002) di ac ion plane [69–71] and he la ice dis ance
o 0.34nm. Oxida ion leads o an inc ease in he in e laye
dis ance due o laye s ex olia ion, wa e in e cala ion, and
inco po a ion o unc ional g oups on he basal plane o
g aphene shee s and his could be obse ed by shi ing he
peak o a lowe angle, o 10.9° which co esponds o laye
dis ance o 0.81nm [49]. When GO is educed, he peak 2θ
is shi ing o highe angles, while declining in he in e laye
dis ance could be used o ollow he p ocess o educ ion as
well. This can be seen in Fig.3e, whe e GO loses unc ional
g oups o e ime o he hyd o he mal educ ion ea men
and he g aphene s uc u e has been pa ially es o ed.
The mo phology o he g aphene and g aphene oxide
is usually s udied using a omic o ce mic oscopy (AFM)
which gi es in o ma ion abou su ace oughness, shee s
size, shee s heigh , and p o iles (Fig.4a–h) [72, 73]. By
measu ing he heigh o he shee using AFM, he numbe
Fig. 2 Resul s o he Scopus da abase on 1s Feb ua y 2023, using
TITLE-ABS-KEY “elec omagne ic in e e ence shielding” AND
“g aphene”
63G aphene and 2D Ma e ials (2023) 8:59–80
1 3
o g aphene laye s could be es ima ed (Fig.4b, d) o i can
show he su ace oughness o he shee which is usually
ela ed o unc ional g oups (Fig.4g, h). Scanning elec-
on mic oscopy (SEM) is used o he in es iga ion o he
c oss sec ion mo phology o he s anding ilms and he ilm
hickness (Fig.4i, j) [74–76] bu also o analysis o shee
mo phology (Fig.4k, l) [77–79]. T ansmission elec on
mic oscopy (TEM) is an ine i able ool o he analysis o
shee s size, and laye s numbe s (Fig.4m, n, o) [80]. I e en
o e s he possibili y o in es iga e g aphene s uc u e a he
a omic le el and con ibu es o he es ima ion o he p es-
ence o de ec s such as acancies (Fig.4n) o o s udy edges
(Fig.4o). Apa om mic oscopic echniques, me hods such
as dynamic ligh sca e ing (DLS) [81] and ze a size a e
Table 1 Summa ized esul s o a ious g aphene-based nanoma e ials, and hei elec ical (shee esis ance, R and elec ical conduc i i y, σ),
s uc u al p ope ies, and EMI SE
a D is diame e , L is leng h
Ma e ial G aphene o GO AgNWsaR o σS uc u e EMI SE
G aphene oxide (GO) ilms
[30]Humme ’s
≈ 1.1nm hick
1.2μm
– 1000 S/cm XPS C/O 73.1; XRD: 26°
(002), ID/IG 0.14 20dB
G aphene oxide [31] Humme ’s
Small SGO 1 μm2
La ge LGO 23 μm2
–152 ± 7.5 S/cm XPS: C/O 1.79 ( SGO)
o 6.75 ( LGO); ID/IG
0.9–1.4
XRD: (002)
AgNW/cellulose pape s
[32]– Polyol
D 19nm
L 18μm
67.51 S/cm XRD: (101), (002), (111),
(200), (220), (311) 48.6dB a 1GHz
GO/AgNWs/GO ilms [33] Humme ’s D 15–35nm
L 15–25μm 6.5 × 104 S/m XPS C/O: 9
Raman ID/IG 1.4 38dB a 8.4–12GHz
PET/AgNWs/G aphene
[34]CVD g aphene D 90nm
L 40μm 199.75 o
152.33 Ω/sq – –
GO/AgNWs composi es
on glass, ex ile ab ic,
and PET [35]
High shea speed o
expanded g aphi e
3–15 laye s
10 o 30μm
Polyol
D 30–50nm
L 30–50μm
6–24 Ω/sq XRD: (002), (111), (200),
(004), (220)
XPS O/C 0.041
con ac angle: 129
–
PET/AgNWs/GO/ac ylic
NP [36]0.5–5μm D 35–45nm
L 5–15μm 34.8 Ω/sq Con ac angle 86.3° 20dB (0.5–3GHz)
GO/AgNWs composi e
[37]40μm D ~ 37nm
L < 10μm 2.9 × 106 S/m densi y 2.9g/cm392dB o 2.9g/cm3,
32dB o 18μm on
co on
G/GQDs/AgNP in PVDF
[38]Imp o ed Humme s XRD: (111), (200), (220),
(311) 43dB a 8GHz
GO/AgNWs/PDMS ae o-
gel [39]Humme ’s Polyol 12.1 S/cm 34.1dB
Polyu e hane/GO/AgNW
[40]D 20–25nm
L 25–30μm 20dB
PET/GO/AgNWs/Ag
g ids/PET [41]Polyol 1.6 Ω/sq T anspa ency 74.4% 42.9dB a 1.8GHz
GO/AgNWs ae ogels [39] 5–8μm D 60nm
L 20–30μm XPS C/O 6.6, ID/IG 1.6,
XRD: (002), (111),
(200), (220), (311)
45.2dB
PMMA/g aphene/me al
mesh hyb id [42]5.53 Ω/sq 28.9dB a 12–18GHz
AgNWs/GO [43] XRD: (002) GO, (111),
(200), (100) 40.1dB
AgNWs/GO [44]ID/IG: 1.1–0.7, XPS: O
g oups, XRD: 25–46nm 35.5dB
F ee-s anding GO–AgNW
composi e [45]0.5–2μm size D 40nm
L 20–45μm 1144.32 o 2255.8 S/cm Cha ge o GO: − 47.4, Ag
NWs: + 16.2mV
XRD: (001), (111),
(200), (220), XPS C/O
0.33–0.37
55.16dB
66 779.66dB cm−1

64 G aphene and 2D Ma e ials (2023) 8:59–80
1 3
pa icula ly use ul o in es iga ing he a e age shee s size
and cha ge o he GO in solu ion, espec i ely [82].
Wi h nume ous as onishing s uc u al, chemical, physi-
cal, and mechanical p ope ies, g aphene a ac ed a en ion
ac oss a ious scien i ic ields [84–88]. Recen ly, he in e -
es in i s po en ial applica ion in EMI shielding is g owing.
Fi s , we will summa ize he esul s ega ding g aphene,
g aphene oxide, and doped g aphene, and a e we will deal
wi h composi es wi h g aphene and sil e nanowi es.
2.1.2 EMI shielding wi hg aphene‑based ma e ials
One o he i s s udies epo ing he abili y o he g aphene-
based composi e o block EMW was published in 2009 [89].
Liang e al. p oduced a composi e based on GO and epoxy
polyme using an insi u polyme iza ion. GO was p oduced
using he modi ied Humme ’s me hod, ollowed by chemi-
cal educ ion wi h hyd azine leading o he p oduc ion o
GO. Then, he epoxy polyme was ob ained di ec ly on he
Fig. 3 Raman spec a o g aphene (a), ep in ed wi h pe mission
om Raman S udies o Monolaye G aphene: The Subs a e E ec ,
by Yingying Wang, Zhen Hua Ni, Ting Yu, e  al., The Jou nal o
Physical Chemis y C, 112, 29, 10,637–10640.
Copy igh 2008 Ame ican Chemical Socie y [47], and g aphene
oxide (b) ep in ed wi h pe mission om The Impo ance o In e -
bands on he In e p e a ion o he Raman Spec um o G aphene
Oxide by Se gi Cla amun , Aïda Va ea, Da id López-Díaz, e  al.,
2015, 119, 18, 10,123–10129, Copy igh 2015 Ame ican Chemi-
cal Socie y [51], XPS om (c and d) ep in ed wi h pe mission
om P obing he The mal Deoxygena ion o G aphene Oxide Using
High-Resolu ion InSi u X- ay-Based Spec oscopies by Abhiji Gan-
guly, Su bhi Sha ma, Pagona Papakons an inou, e al., 2011, 115, 34,
17,009–17019, Copy igh 2011 Ame ican Chemical Socie y [48],
FTIR spec a o GO and GO ep in ed wi h pe mission om Con-
olled syn hesis, cha ac e iza ion and educ ion o g aphene oxide:
A con enien me hod o la ge-scale p oduc ion by Ta ko Fen aw
Emi u, Delele Wo ku Ayele Egyp ian Jou nal o Basic and Applied
Sciences 4, 1, 2017, 74–79, Copy igh C ea i e Commons A ibu-
ion-NonComme cial-NoDe i a i es License (e) [50], and XRD spec-
a o g aphi e, GO and educed GO a di e en condis ion, ep in ed
om S uc u al E olu ion o Hyd o he mally De i ed Reduced G a-
phene Oxide, Hsin-Hui Huang, K. Kanishka H. De Sil a, G. R. A.
Kuma a, Masamichi Yoshimu a, Scien i ic Repo s, 8, A icle, 6849
(2018) a unde a C ea i e Commons A ibu ion 4.0 In e na ional
License ( ) [49]
65G aphene and 2D Ma e ials (2023) 8:59–80
1 3
g aphene su ace and cu ed. GO/polyme composi e wi h
15 w % o GO had SE o 21dB in he equency ange
be ween 8.2 and 12.4GHz (X-band). Ano he s udy p o ed
he EMI shielding e iciency o g aphene, whe e SE was
35dB in he equency ange o 0.1–15GHz [90]. They
showed ha he elec ical conduc i i y o g aphene could
be uned by elec os a ic o magne os a ic bias e ealing i s
po en ial applica ion in EMI SE.
The g aphene monolaye p oduced using he CVD
me hod showed a a he low EMI SE o 2.27dB, and he
main shielding mechanism was concluded o be abso p-
ion [91]. The high shee esis ance o 635Ω/sq indica ed
ha monolaye s had a de ec i e s uc u e and showed e y
poo SE, while hose wi h 2 and 3 laye s showed SE o
4.13 and 6.91dB, espec i ely, in he equency ange o
2.2–7GHz. Wi h he inc ease in g aphene laye numbe ,
he abso p ion componen is lowe ing while he e ec-
ion one is inc easing, which is simila beha io ha was
obse ed in hin me al ilms, such as Au ilm. De ec - ee
g aphene was p o en o be be e in EMI SE han hose
wi h de ec s, while SE inc eases wi h he numbe o g a-
phene laye s [92]. When ew-laye g aphene was p oduced
using he same me hod, he hickness o he g aphene
sample was 4nm, EMI SE was 19.1dB (18–26.5GHz),
Fig. 4 AFM images o he g aphene deposi ed on SiO2 suppo be o e
and a e he mal educ ion (a–d) adap ed unde he e ms o he
C ea i e Commons A ibu ion 3.0 license, by Lene Gammelgaa d,
José M Ca idad, Albe o Cagliani, Da id M A Mackenzie, Di ch H
Pe e sen, Timo hy J Boo h, Pe e Bøggild G aphene anspo p op-
e ies upon exposu e o PMMA p ocessing and hea ea men s, 2D
Ma e ials 1 (2014) 035005. h ps:// doi. o g/ 10. 1088/ 2053- 1583/1/ 3/
035005 [73], AFM images o un educed (e, g) and educed GO ( , h),
adap ed wi h pe mission om Langmui 2009, 25, 10, 5957–5968.
Copy igh 2009 Ame ican Chemical Socie y [72]; SEM images o
ai -d ied GO (i) and acuum-annealed GO (j), adap ed wi h pe mis-
sion om ACS Nano 2010, 4(7), 3845–3852, Copy igh 2010 Ame -
ican Chemical Socie y [74]; SEM image o g aphi e lakes (k) and
ex olia ed GO shee s (l) unde he e ms o he C ea i e Commons
CC BY license, Copy igh © 2018, Sama Azizighannad e al., S ep-
wise Reduc ion o G aphene Oxide (GO) and I s E ec s on Chemi-
cal and Colloidal P ope ies, Scien i ic Repo s, 2018, 8, 10,083
[83]; high esolu ion-TEM images o GO (m, n, and o) adap ed om
adap ed wi h pe mission om Nano Le e s 2010, 10, 4, 1144–1148
by C is ina Gómez-Na a o, Jannik C. Meye , Ra i S. Sunda am,
e al. Copy igh 2010 Ame ican Chemical Socie y [80]
66 G aphene and 2D Ma e ials (2023) 8:59–80
1 3
and ansmi ance was 80.5% [93]. Wi h an inc ease in
he elec ical conduc i i y o g aphene, i.e., mul ilaye ed
g aphene, a highe elec ical conduc i i y was achie ed as
compa ed o monolaye g aphene leading o highe e lec-
ion and ice e sa. Bu , due o es ic ions in he size o
CVD-p oduced g aphene, his me hod is inapp op ia e o
ans e o la ge-scale, echnically complica ed, and uneco-
nomical, hus o he app oaches mus be conside ed. G a-
phene o applica ion in EMI shielding is usually p oduced
as a bulk ma e ial, using Humme ’s me hod in he o m
o g aphene oxide ollowed by educ ion. The schema ic
p esen a ion o he single-laye ed g aphene s uc u e and
EM shielding is p esen ed in Fig.5.
Due o he p esence o he discon inui ies in he π-cloud,
EWs a e able o pass h ough g aphene, while a pa o he
wa es is abso bed a e abso bed and con e ed in o hea . In
he case o a ew-laye g aphene, be e shielding e iciency
could be explained by mul iple abso p ions o he ansmi -
ed wa es, as p esen ed in Fig.6.
When GO ilms we e ab ica ed by di ec e apo a ion o
GO suspension unde mild hea ing, i was no iced ha he
ma e ial possess a high EMI SE [30]. Ul a hin GO ilms
(8.4μm) we e annealed a 2000°C and showed excellen
EMI shielding e ec i eness o 20dB and high in‐plane
he mal conduc i i y o 1100W m−1 K‐1. The ma e ial had
excellen mechanical lexibili y and s uc u al in eg i y du -
ing bending, indica ing ha he g aphi iza ion o GO ilm
could be conside ed a new al e na i e way o p oduce excel-
len EMI shielding ma e ial.
Chemically educed g aphene hin ilm had a simila
EMI SE, o a ound 20dB [31]. GO lakes we e ob ained
by Humme ’s me hod and sepa a ed in o la ge (LGO, wi h
a su ace a ea o 23 μm2) and small GO lakes (SGO, a ea
1μm2) by cen i uga ion. F ee-s anding ilms we e p oduced
Fig. 5 Schema ic p esen a ion
o single-laye g aphene s uc-
u e wi h indica ed co enan
bonds and π-cloud, and de ec
in g aphene s uc u e and he
ai h o EMW when hey hi i s
su ace, e lec ion, ansmission,
and abso p ion om op (le )
and side iew ( igh )
Fig. 6 Schema ic p esen a-
ion o mul ilaye g aphene he
ai h o EMW when hey hi i s
su ace, e lec ion, ansmission,
and abso p ion o EMWs
67G aphene and 2D Ma e ials (2023) 8:59–80
1 3
by acuum deposi ion, while ilm hickness was con olled
by changing he olume o GO dispe sion. Using HI apo ,
he chemical educ ion was achie ed and LGO and SGO
we e p oduced. The ilm hickness was om 7.5 o 10μm.
XPS analysis showed ha he a io C/O was 1.56 and 1.79
o SGO and LGO, and i inc eased o 5.25 and 6.75, espec-
i ely, a e he educ ion. S uc u al diso de o GO is usu-
ally es ima ed using Raman spec a analysis whe e he a io
be ween D and G bands is p opo ional o de ec s in g a-
phene s uc u e [61, 93]. In his case, he ID/IG peak in en-
si y a ios we e 0.93, 0.90, 1.40, and 1.35, co esponding
o SGO, LGO, SGO, and also LGO ilms. These alues
a e conside ed ela i ely high meaning ha in he g aphene
s uc u e de ec s a e p esen . XRD showed a 2θ peak o
g aphi e sha ply appea ing a 26.71°, indica ing a d-spacing
o 3.34Å, while he shi o 2θ peak om 10.39° (SGO)
o 26.0° ( SGO) and om 10.7° (LGO) o 26.14° ( LGO)
sugges he educ ion. Wi h he inc ease in GO shee s size,
d as ic enhancemen in bo h elec ical (243 ± 12 S cm−1) and
he mal conduc i i y (1390 ± 65 W m−1 K−1) was de ec ed.
To al EMI shielding e ec i eness o bo h SGO and LGO
hin ilms in L and S bands (300MHz–4GHz) equency
ange wi h a ious hicknesses:
• 3μm shows EMI SET alues o ∼ 4.5 and 6dB o SGO
and LGO,
• 7.5μm eaches up o ∼ 15dB o LGO ilm and ∼ 12dB
o SGO ilm a 1GHz,
• wo ilms o 7.5μm hicknesses oge he ( o al hickness
∼ 15μm):∼ 20.2dB ( LGO) and ∼ 17dB ( SGO).
EMI SE alue inc eases wi h he ilm hickness. This
indica es ha no only elec ical conduc i i y bu also he
hickness o he shielding ma e ials plays a key ole in
EMI shielding e iciency. Fo LGO o hickness ∼ 15μm,
SET, SER, and SEA we e measu ed o be ∼ 20.2, 5.55, and
14.65dB, espec i ely. A simila end was ound o SGO
wi h smalle shee s, whe e SET, SER, and SEA we e ∼ 16.7,
5.42, and 11.28dB, espec i ely. These esul s sugges ha
g aphene ilms ha e bo h e lec i e and abso p i e cha ac-
e is ics o elec omagne ic adia ion; wi h abso p ion as
he dominan shielding mechanism. Bu also, hese esul s
indica e ha shee size does no play a key ac o in he EMI
shielding o g aphene.
The g aphene pelle was p oduced in he CVD p ocedu e
and analyzed as a ee-s anding ilm o EMI shielding [94].
The hickness o he ilm was 50μm, elec ical conduc i i y
was 1136 S/cm, and EMI shielding e iciency was 60dB.
Fo g aphene pape , EMI SE was be ween 53 and 55dB
[95]. The ma e ial was ob ained using i e-s age p ocess,
om g aphi e he mal ex olia ion a 1150°C, sonica-
ion, acuum il a ion, he mal annealing (up o 450°C),
and mechanical comp ession (5MPa). The conduc i i y
o 443 S/cm was achie ed and eached 1435S/cm a e
comp ession.
In ano he s udy, GO lakes in h ee di e en sizes
(5–8μm, 20–30μm, and 40–50μm) we e used o ob ain
GO ee-s anding ilms [96]. The educ ion was achie ed by
he mal ea men a 2600°C, and samples we e mechani-
cally comp essed a 300MPa maximal. The highes SE was
measu ed o he ilm p epa ed om he la ges GO lakes
(73.7dB) and i was no iced ha mechanical comp es-
sion leads o lowe ing he EMI SE. This phenomenon was
explained by po e c ashing. Namely, in ee-s anding g a-
phene ilms, insula ed ai po es and g aphene walls a e p e-
sen . When he inciden EMWs hi he in e e ence be ween
g aphene and ai po e, one po ion o EMW is ansmi -
ed while he o he is e lec ed, and mul iple e lec ions
and ansmissions a e epea ed in ini ely be ween g aphene
walls in he lamella s uc u e o ee-s anding ilms. Bu
a e comp ession, he dis ance be ween he wall in po es is
lowe ed which leads o des uc i e in e e ence o EMWs.
One mo e s udy in es iga ed ee-s anding g aphene
ilms [97]. He ein, GO was i s ob ained using chemical
ex olia ion o g aphi e using sodium pe bo a e (BH8NaO7)
and concen a ed H2SO4. Vacuum il a ion ollowed by
mechanical comp ession (20MPa) was used o ob ain g a-
phene ilm. G aphene wi h low de ec and low O con en
(1.8–2.6 a %) was p oduced. Ve y hin ee-s anding ilms o
1.6 and 3.2μm showed as onishing EMI SE o 33 and 68dB,
espec i ely. This is a eco d shielding e iciency compa ed
o he sample hickness. The main shieling mechanism was
abso p ion. Figu e7 p esen s he s uc u e o GO wi h indi-
ca ed de ec s such as wholes and O- unc ional g oups, as
well as he in e ac ion wi h EMWs and abso p ion.
Wi h he doping o g aphene shee s, he EMI SE was
la gely imp o ed [98]. He ein, esea che s selec ed la ge
g aphene shee s, doped hem wi h iodine, and p oduced
ee-s anding ilms wi h a ema kable EMI SE o 52.2dB,
when he sample hickness was only 12.5μm. Using GO
dispe sion, ee-s anding ilms we e ob ained by acuum
il a ion, and annealed a 1600°C in A a mosphe e, ol-
lowed by exposi ing o I2 apo a 200°C o inco po a e I
a oms in he g aphene s uc u e. Apa om EMI shield-
ing e icien ly, he ma e ial showed as onishing elec ical
conduc i i y o 1.05 × 105S/cm. Also, when g aphene was
doped wi h only 1.95 a % o S a oms, p oduced ee-s anding
ilms showed he EMI shielding e iciency o 38.6dB [99],
and a ound 33.2dB o g aphene doped wi h 5.6w % o
sul u [100], and o ul a hin ilms wi h ni ogen (7.89a %)
SE was 58.5dB [101]. This ema kable inc ease in he EMI
SE was explained by he inc ease in he elec on densi y in
he g aphene π-cloud, as can be obse ed in Fig.8, whe e
S-, N-doped GO was p esen ed. Al hough he e oa oms
inc ease s uc u al diso de , i hey ha e highe elec on-
ega i i y o a e inco po a ed in o he g aphene s uc u e
74 G aphene and 2D Ma e ials (2023) 8:59–80
1 3
1. AgNWs colloid deposi ed on suppo ollowed by on- op
syn hesis o g aphene using CVD [34],
2. AgNWs colloid and GO dispe sion mixed in di e en
olume/mass a ios [33, 35, 37],
3. we -coa ing o AgNWs on PET suppo ollowed by a
coa ing o GO dispe sion [36],
4. ae ogel o GO lakes and polyol-syn hesized AgNWs
back illed wi h PDMS [39],
5. syn hesis o AgNWs on suppo s by elec oless deposi -
ing echniques ollowed by GO elec odeposi ion [44],
6. acuum il a ion o achie e laye -by-laye sel -assembly
o GO and AgNWs [45],
7. ae ogel was ob ained by GO wa e dispe sion mixing
wi h AgNWs ollowed by educ ion [142],
8. in si u syn hesis o AgNWs on GO lakes by hyd o he -
mal ou e [144].
Due o simplici y, he quick es ablishing o he in e ac-
ions be ween GO and AgNWs, he possibili y o p oduce
he composi e a a la ge scale, p ocessabili y, and he ease o
con ol o he con en o each componen o he composi e,
he me hod lis ed unde 2 is mos ly used in AgNWs-GO
p epa a ion.
Thanks o excellen lexibili y, anspa ency, p ocessabil-
i y, and a high EMI SE, hese ilms showed g ea p omise in
a ious applica ions, om ins umen p o ec ion, ca , and
o he ehicles indus y, o he applica ion ex ile indus y.
3 Conclusion
G aphene and i s composi es a e being inc easingly s udied
as EMI SE ma e ials. Wi h he de elopmen o syn he ic
me hods and possibili ies o modula e g aphene s uc u e,
EMI shielding e iciency is ge ing highe . The mass-scale
p oduc ion o g aphene equi es i o be bo h cos -e ec i e
and ecologically iendly. Mos o he ecen s udies pe -
o med in ecen imes conside ing g aphene o shielding
applica ions in ol e he p oduc ion o g aphene wi h ei he
he Humme s me hod o he CVD me hod. I seems ha he
elec ochemical ex olia ion o g aphi e o g aphene p oduc-
ion has g ea po en ial and many ad an ages o example
due o a oidance o chemical use, mild condi ions, simplic-
i y as well as he po en ial o be ans e ed o a la ge scale.
Va ious possibili ies o doped g aphene s uc u e om he -
e oa oms o unc ionaliza ion wi h elec on-dona ing unc-
ional g oups lead o imp o emen s in he elec ical conduc-
i i y o his ma e ial as well as i s EMI SE. In he u u e, he
de elopmen o new, g een app oaches o g aphene doping,
such as hyd o he mal app oach, mic owa e o lase -induced
doping, o gamma i adia ion could highly imp o e g aphene
EMI shielding beha io . Due o hei chemical p ope ies,
AgNWs c ea e complex easily wi h GO and highly imp o e
elec ical conduc i i y and EMI SE. Howe e , hey a e no
s able in he en i onmen s. Combining g aphene o GO wi h
AgNWs wi h di e en polyme s is a p omising s a egy o
p oduce comme cial p oac i e co e agains EMWs ha a e
Table 2 EMI SE, sample
hickness, and anspa ency o
he sample
a GNR-g aphene nano ibbons
b TCP- anspa en cellulose pape
Ma e ial SET (dB) Thickness T ans-
pa ency
(%)
CVD g aphene [91] 2.27 0.4nm 98.3
PEI/RGO [162] 6.36 20nm 62
G aphene/PMMA [163] 48% 800nm 97.8
G aphene/PET [92] 19.14 4nm g aphene 80.5
Me al mesh/g aphene [164] 14.1 – 97.3
g aphene/me allic mesh/ anspa en dielec ic 67.9 – 85
G aphene/me al ne wo k [42] 20.67 320µm 94
Ac ylic polyme -coa ed/ GO/AgNWs [92] 24 – 85
Ni mesh/GO [165] 12.1 20nm 83
PVA GNRa—Fe3O4 [166] 16.36 – 79.8
Ti3C2Tx MXene-PU-AgNWs [167] 27.8 – 86
Epoxy/ca bon nano ube sandwich [168] 23.4 6mm 0
G aphene mesh [169] 3.86 3–5 95
PDMS/AgNWs/TCP [169] 39.1 – 86.8
PET/AgNWs/ GO [170] 33.6 – 82

75G aphene and 2D Ma e ials (2023) 8:59–80
1 3
e icien shielding ma e ials, anspa en , du able, s able,
ligh weigh , and hin.
Acknowledgemen s This wo k was suppo ed by he EU, Ho izon
Eu ope p og am, Coo dina ion and Suppo Ac ion, p ojec Twinning
o new g aphene-based composi es in elec omagne ic in e e ence
shielding—G InShield (No. 101079151), and by he Minis y o Sci-
ence, Technological De elopmen and Inno a ion o he Republic o
Se bia [G an Numbe 451-03-68/2023-14/200017]. Also, he au ho s
hank Ph.D. s uden A. Miso ic o p epa ing igu e1.
Au ho con ibu ions SJ w o e he main manusc ip ex , MH p epa ed
sec .2.2.2, DK wo ked on sec .2.1, MY p epa ed sec .2, in oduc ion
pa , and KH wo ked on sec .2., sec .2.2.2. All au ho s e iewed he
manusc ip .
Decla a ions
Con lic o in e es The au ho s decla e no compe ing in e es s.
Open Access This a icle is licensed unde a C ea i e Commons A i-
bu ion 4.0 In e na ional License, which pe mi s use, sha ing, adap a-
ion, dis ibu ion and ep oduc ion in any medium o o ma , as long
as you gi e app op ia e c edi o he o iginal au ho (s) and he sou ce,
p o ide a link o he C ea i e Commons licence, and indica e i changes
we e made. The images o o he hi d pa y ma e ial in his a icle a e
included in he a icle’s C ea i e Commons licence, unless indica ed
o he wise in a c edi line o he ma e ial. I ma e ial is no included in
he a icle’s C ea i e Commons licence and you in ended use is no
pe mi ed by s a u o y egula ion o exceeds he pe mi ed use, you will
need o ob ain pe mission di ec ly om he copy igh holde . To iew a
copy o his licence, isi h p://c ea i ecommons.o g/licenses/by/4.0/.
Re e ences
1. Tiikkaja M, A o AL, Alanko T, Lindholm H, Sis onen H, Ha -
ikainen JEK, Toi onen L, Juu ilainen J, Hie anen M (2012)
Elec omagne ic in e e ence wi h ca diac pacemake s and
implan able ca dio e e -de ib illa o s om low- equency elec-
omagne ic ields in i o. EP Eu . h ps:// doi. o g/ 10. 1093/ eu op
ace/ eus345
2. Upadhyay S, Upadhya A, Salehi W, Gup a G (2021) The medical
aspec s o EMI e ec on pa ien s implan ed wi h pacemake s.
Ma e Today. h ps:// doi. o g/ 10. 1016/j. ma p . 2021. 01. 826
3. Go don JS, Maynes EJ, O’Malley TJ, Pa i BB, Tchan chaleish-
ili V (2021) Elec omagne ic in e e ence be ween implan -
able ca diac de ices and con inuous- low le en icula assis
de ices: a e iew. J In e Ca d Elec ophysiol. h ps:// doi. o g/
10. 1007/ s10840- 020- 00930-8
4. Ca les C, Esqui ol Y, Tu uban M, Piel C, Migaul L, Pouchieu C,
Bou ie G, Fabb o-Pe ay P, Lebailly P, Baldi I (2020) Residen ial
p oximi y o powe lines and isk o b ain umo in he gene al
popula ion. En i on Res. h ps:// doi. o g/ 10. 1016/j. en es. 2020.
109473
5. Zheng Y, Cheng J, Dong L, Ma X, Kong Q (2019) E ec s o
exposu e o ex emely low equency elec omagne ic ields on
hippocampal long- e m po en ia ion in hippocampal CA1 egion.
Biochem Biophys Res Commun. h ps:// doi. o g/ 10. 1016/j. bb c.
2019. 07. 085
6. Hosseinabadi MB, Khanjani N, Eb ahimi MH, Haji B, Abdolah-
a d M (2019) The e ec o ch onic exposu e o ex emely low-
equency elec omagne ic ields on sleep quali y, s ess, dep es-
sion and anxie y. Elec omagn Biol Med. h ps:// doi. o g/ 10. 1080/
15368 378. 2018. 15456 65
7. Gunna sson LG, Bodin L (2019) Occupa ional exposu es and
neu odegene a i e diseases—a sys ema ic li e a u e e iew and
me a-analyses. In J En i on Res Public Heal h. h ps:// doi. o g/
10. 3390/ ije p h1603 0337
8. Klimek A, Rogalska J (2021) Ex emely low- equency magne ic
ield as a s ess ac o - eally de imen al?-Insigh in o li e a u e
om he las decade. B ain Sci. h ps:// doi. o g/ 10. 3390/ b ain
sci11 020174
9. Jalilian H, Guxens M, Heikkinen S, Pukkala E, Huss A, Eshagh
Hossaini SK, Kjæ heim K, Ve meulen R (2022) Malignan lym-
phoma and occupa ional exposu e o ex emely low equency
magne ic ields and elec ical shocks: a nes ed case-con ol s udy
in a coho o ou No dic coun ies. Occup En i on Med. h ps://
doi. o g/ 10. 1136/ oemed- 2021- 108120
10. Toui ou Y, Selmaoui B (2012) The e ec s o ex emely low-
equency magne ic ields on mela onin and co isol, wo ma ke
hy hms o he ci cadian sys em. Dialogues Clin Neu osci.
h ps:// doi. o g/ 10. 31887/ DCNS. 2012. 14.4/ y oui ou
11. Toui ou Y, Cos e O, Dispe syn G, Pain L (2010) Dis up ion
o he ci cadian sys em by en i onmen al ac o s: e ec s o
hypoxia, magne ic ields and gene al anes he ics agen s. Ad
D ug Deli Re . h ps:// doi. o g/ 10. 1016/j. add . 2010. 06. 005
12. Toui ou Y, Selmaoui B, Lamb ozo J (2022) Assessmen o
co isol sec e o y pa e n in wo ke s ch onically exposed o
ELF-EMF gene a ed by high ol age ansmission lines and
subs a ions. En i on In . h ps:// doi. o g/ 10. 1016/j. en in . 2022.
107103
13. Toui ou Y, Lamb ozo J, Mau ieux B, Riedel M (2020) E alu-
a ion in humans o ELF-EMF exposu e on ch omog anin A, a
ma ke o neu oendoc ine umo s and s ess. Ch onobiol In .
h ps:// doi. o g/ 10. 1080/ 07420 528. 2019. 16838 57
14. Quesnel-Gal án LR, To es-Du án PV, Elías-Viñas D, Ve dugo-
Díaz L (2021) E ec o ex emely low equency magne ic ields
on oxida i e balance in a b ains subjec ed o an expe imen-
al model o ch onic unp edic able mild s ess. BMC Neu osci.
h ps:// doi. o g/ 10. 1186/ s12868- 021- 00656-x
15. Ma u hi N, Faisal M, Ragha end a N (2021) Conduc ing polyme
based composi es as e icien EMI shielding ma e ials: a comp e-
hensi e e iew and u u e p ospec s. Syn h Me . h ps:// doi. o g/
10. 1016/j. syn h me . 2020. 116664
16. K uželák J, K asničáko á A, Hložeko á K, Hudec I (2021)
P og ess in polyme s and polyme composi es used as e icien
ma e ials o EMI shielding. Nanoscale Ad . h ps:// doi. o g/ 10.
1039/ d0na0 0760a
17. Wang L, Ma Z, Zhang Y, Chen L, Cao D, Gu J (2021) Polyme -
based EMI shielding composi es wi h 3D conduc i e ne wo ks:
a mini- e iew. SusMa . h ps:// doi. o g/ 10. 1002/ sus2. 21
18. Guo Y, Qiu H, Ruan K, Wang S, Zhang Y, Gu J (2022) Flexible
and insula ing silicone ubbe composi es wi h sandwich s uc-
u e o he mal managemen and elec omagne ic in e e ence
shielding. Compos Sci Technol. h ps:// doi. o g/ 10. 1016/j. comps
ci ech. 2021. 109253
19. Yang Y, Chen Y, Wang B, Zhou Y, Chai X, Yan X, Han W, Liu
C, Lin P, Xia Y, Zhang H, Liao X (2022) G adien s uc u e
silicone ubbe composi es o selec i e elec omagne ic in e -
e ence shielding enhancemen and low e lec ion. Compos Sci
Technol. h ps:// doi. o g/ 10. 1016/j. comps ci ech. 2022. 109688
20. Lee SM, Kim JH, Ahn JH (2015) G aphene as a lexible elec-
onic ma e ial: mechanical limi a ions by de ec o ma ion and
e o s o o e come. Ma e Today. h ps:// doi. o g/ 10. 1016/j. ma -
od. 2015. 01. 017
21. No oselo KS, Geim AK, Mo ozo SV, Jiang D, Zhang Y,
Dubonos SV, G igo ie a IV, Fi so AA (2004) Elec ic ield
e ec in a omically hin ca bon ilms. Science 306:666–669.
h ps:// doi. o g/ 10. 1126/ scien ce. 11028 96
76 G aphene and 2D Ma e ials (2023) 8:59–80
1 3
22. Xia Y, Gao W, Gao C (2022) A e iew on g aphene-based elec-
omagne ic unc ional ma e ials: elec omagne ic wa e shielding
and abso p ion. Ad Func Ma e . h ps:// doi. o g/ 10. 1002/ ad m.
20220 4591
23. Naghdi S, Jaleh B, Eslamipanah M, Mo adi A, Abdollahi M,
Einali N, Rhee KY (2022) G aphene amily, and hei hyb id
s uc u es o elec omagne ic in e e ence shielding applica-
ions: ecen ends and p ospec s. J Alloys Compd. h ps:// doi.
o g/ 10. 1016/j. jallc om. 2021. 163176
24. Li JS, Huang H, Zhou YJ, Zhang CY, Li ZT (2017) Resea ch
p og ess o g aphene-based mic owa e abso bing ma e ials in
he las decade. J Ma e Res. h ps:// doi. o g/ 10. 1557/ jm . 2017. 80
25. Raagulan K, B a een h R, Kim BM, Lim KJ, Lee SB, Kim M,
Chai KY (2020) An e ec i e u iliza ion o MXene and i s e ec
on elec omagne ic in e e ence shielding: lexible, ee-s anding
and he mally conduc i e composi e om MXene–PAT–poly
(p-aminophenol)–polyaniline co-polyme . RSC Ad . h ps:// doi.
o g/ 10. 1039/ C9RA0 9522E
26. Ja oszewski M, Thomas S, Rane AV (2018) Ad anced ma e i-
als o elec omagne ic shielding: undamen als, p ope ies, and
applica ions. Wiley, Hoboken
27. Shukla V (2019) Re iew o elec omagne ic in e e ence shield-
ing ma e ials ab ica ed by i on ing edien s. Nanoscale Ad .
h ps:// doi. o g/ 10. 1039/ C9NA0 0108E
28. Iqbal A, Kwon J, Kim MK, Koo CM (2021) MXenes o elec-
omagne ic in e e ence shielding: expe imen al and heo e ical
pe spec i es. Ma e Today Ad . h ps:// doi. o g/ 10. 1016/j. m ad .
2020. 100124
29. Gaoui B, Hadjadj A, Kious M (2017) No el mul ilaye a ange-
men o conduc i e laye s aps he elec omagne ic in e e -
ences by mul iple in e nal e lec ions a high equency in he
a ield. J Ma e Sci Ma e Elec on. h ps:// doi. o g/ 10. 1007/
s10854- 016- 6006-z
30. Shen B, Zhai W, Zheng W (2014) Ul a hin lexible g aphene
ilm: an excellen he mal conduc ing ma e ial wi h e icien
emi shielding. Ind Eng Chem Res. h ps:// doi. o g/ 10. 1002/ ad m.
20140 0079
31. Kuma P, Shahzad F, Yu S, Hong SM, Kim YH, Koo CM (2015)
La ge-a ea educed g aphene oxide hin ilm wi h excellen he -
mal conduc i i y and elec omagne ic in e e ence shielding
e ec i eness. Ca bon. h ps:// doi. o g/ 10. 1016/j. ca bon. 2015.
07. 032
32. Lee TW, Lee SE, Jeong YG (2016) Highly e ec i e elec omag-
ne ic in e e ence shielding ma e ials based on sil e nanowi e/
cellulose pape s. ACS Appl Ma e In e aces. h ps:// doi. o g/ 10.
1021/ acsami. 6b022 18
33. Kuma P, Shahzad F, Hong SM, Koo CM (2016) A lexible
sandwich g aphene/sil e nanowi es/g aphene hin ilm o high-
pe o mance elec omagne ic in e e ence shielding. RSC Ad .
h ps:// doi. o g/ 10. 1039/ C6RA1 8652A
34. Das SR, Nian Q, Saei M, Jin S, Back D, Kuma P, Janes DB,
Alam MA, Cheng GJ (2015) Single-laye g aphene as a ba ie
laye o in ense UV lase -induced damages o sil e nanowi e
ne wo k. ACS Nano. h ps:// doi. o g/ 10. 1021/ acsna no. 5b046 28
35. Alo aibi F, Tung TT, Nine MJ, Coghlan CJ, Losic D (2018) Sil e
nanowi es wi h p is ine g aphene oxida ion ba ie s o s able
and high pe o mance anspa en conduc i e ilms. ACS Appl
Nano Ma e . h ps:// doi. o g/ 10. 1021/ acsanm. 8b002 55
36. Kim DG, Choi JH, Choi DK, Kim SW (2018) Highly bendable
and du able anspa en elec omagne ic in e e ence shielding
ilm p epa ed by we sin e ing o sil e nanowi es. ACS Appl
Ma e In e aces. h ps:// doi. o g/ 10. 1021/ acsami. 8b070 54
37. Sim HJ, Lee DW, Kim H, Jang Y, Spinks GM, Gambhi S, O ice
DL, Wallace GG, Kim SJ (2019) Sel -healing g aphene oxide-
based composi e o elec omagne ic in e e ence shielding. Ca -
bon. h ps:// doi. o g/ 10. 1016/j. ca bon. 2019. 08. 073
38. Lakshmi N, Tambe PJCI (2017) EMI shielding e ec i eness o
g aphene deco a ed wi h g aphene quan um do s and sil e nano-
pa icles ein o ced PVDF nanocomposi es. Compos In e aces.
h ps:// doi. o g/ 10. 1080/ 09276 440. 2017. 13022 02
39. Li Y, Li C, Zhao S, Cui J, Zhang G, Gao A, Yan Y (2019) Facile
ab ica ion o highly conduc i e and obus h ee-dimensional
g aphene/sil e nanowi es bicon inuous skele ons o elec o-
magne ic in e e ence shielding silicone ubbe nanocomposi es.
Compos Pa A Appl Sci. h ps:// doi. o g/ 10. 1016/j. compo si esa.
2019. 01. 025
40. Choi JH, Lee KY, Kim SW (2019) Ul a-bendable and du able
g apheme–u e hane composi e/sil e nanowi e ilm o lexible
anspa en elec odes and elec omagne ic-in e e ence shield-
ing. Compos B Eng. h ps:// doi. o g/ 10. 1016/j. compo si esb. 2019.
107406
41. Huang CC, Gup a S, Lo CY, Tai NH (2019) Highly anspa en
and excellen elec omagne ic in e e ence shielding hyb id ilms
composed o sli e -g id/(sil e nanowi es and educed g aphene
oxide). Ma e Le . h ps:// doi. o g/ 10. 1016/j. ma le . 2019. 06. 058
42. Ma L, Lu Z, Tan J, Liu J, Ding X, Black N, Li T, Gallop J,
Hao L (2017) T anspa en conduc ing g aphene hyb id ilms
o imp o e elec omagne ic in e e ence (EMI) shielding pe -
o mance o g aphene. ACS Appl Ma e In e aces. h ps:// doi.
o g/ 10. 1021/ acsami. 7b093 72
43. Zhang N, Wang Z, Song R, Wang Q, Chen H, Zhang B, L H,
Wu Z, He D (2019) Flexible and anspa en g aphene/sil e -
nanowi es composi e ilm o high elec omagne ic in e e ence
shielding e ec i eness. Sci Bull. h ps:// doi. o g/ 10. 1016/j. scib.
2019. 03. 028
44. Yang Y, Chen S, Li W, Li P, Ma J, Li B, Zhao X, Ju Z, Chang
H, Xiao L, Xu H, Liu Y (2020) Reduced g aphene oxide con-
o mally w apped sil e nanowi e ne wo ks o lexible ans-
pa en hea ing and elec omagne ic in e e ence shielding. ACS
Nano. h ps:// doi. o g/ 10. 1021/ acsna no. 0c033 37
45. Jia H, Yang X, Kong QQ, Xie LJ, Guo QG, Song G, Liang LL,
Chen JP, Li Y, Chen CM (2021) F ee-s anding, an i-co osion,
supe lexible g aphene oxide/sil e nanowi e hin ilms o
ul a-wideband elec omagne ic in e e ence shielding. J Ma e
Chem. h ps:// doi. o g/ 10. 1039/ D0TA0 9246K
46. P ekod a ac JR, Kepić DP, Colmena es JC, Giannakoudakis
DA, Jo ano ić SP (2021) A comp ehensi e e iew on selec ed
g aphene syn hesis me hods: om elec ochemical ex olia ion
h ough apid he mal annealing owa ds biomass py olysis. J
Ma e Chem. h ps:// doi. o g/ 10. 1039/ D1TC0 1316E
47. Yy W, Ni Zh, Yu T, Shen ZX, Wang Hm WuYh, Chen W, Shen
Wee AT (2008) Raman s udies o monolaye g aphene: he
subs a e e ec . J Phys Chem C. h ps:// doi. o g/ 10. 1021/ jp800
8404
48. Ganguly A, Sha ma S, Papakons an inou P, Hamil on J (2011)
P obing he he mal deoxygena ion o g aphene oxide using
high- esolu ion insi u X- ay-based spec oscopies. J Phys Chem
C. h ps:// doi. o g/ 10. 1021/ jp203 741y
49. Huang HH, De Sil a KKH, Kuma a GRA, Yoshimu a M (2018)
S uc u al e olu ion o hyd o he mally de i ed educed g aphene
oxide. Sci Rep. h ps:// doi. o g/ 10. 1038/ s41598- 018- 25194-1
50. Emi u TF, Ayele DW (2017) Con olled syn hesis, cha ac e iza-
ion and educ ion o g aphene oxide: a con enien me hod o
la ge scale p oduc ion. Egyp J Basic Appl Sci. h ps:// doi. o g/
10. 1016/j. ejbas. 2016. 11. 002
51. Cla amun S, Va ea A, López-Díaz D, Velázquez MM, Co ne A,
Ci e a A (2015) The impo ance o in e bands on he in e p e a-
ion o he aman spec um o g aphene oxide. J Phys Chem C.
h ps:// doi. o g/ 10. 1021/ acs. jpcc. 5b015 90
52. Wazi AH, Kundi IW (2016) Syn hesis o g aphene nano shee s
by he apid educ ion o elec ochemically ex olia ed g aphene
oxide induced by mic owa es. J Chem Soc Pak 38:11–16
77G aphene and 2D Ma e ials (2023) 8:59–80
1 3
53. Gengle RYN, Badali DS, Zhang D, Dimos K, Spy ou K, Gou nis
D, Mille JRD (2013) Re ealing he ul a as p ocess behind he
pho o educ ion o g aphene oxide. Na u Commun. h ps:// doi.
o g/ 10. 1038/ ncomm s3560
54. Sadhukhan S, Ghosh TK, Rana D, Roy I, Bha acha yya A,
Sa ka G, Chak abo y M, Cha opadhyay D (2016) S udies on
syn hesis o educed g aphene oxide (RGO) ia g een ou e and
i s elec ical p ope y. Ma e Res Bull. h ps:// doi. o g/ 10. 1016/j.
ma e esbu ll. 2016. 02. 039
55. Cai W, Pine RD, S ade mann FJ, Pa k S, Shaiba MA, Ishii
Y, Yang D, Velamakanni A, An MS, An J, Chen D, Ruo RS
(2008) Syn hesis and solid-s a e NMR s uc u al cha ac e iza ion
o 13C-labeled g aphi e oxide. Science. h ps:// doi. o g/ 10. 1126/
scien ce. 11623 69
56. Mišo ić A, Bogdano ić DB, Kepić D, Pa lo ić V, Huskić M,
Hasheminejad N, Vuye C, Zo ić N, Jo ano ić S (2022) P ope -
ies o ee-s anding g aphene oxide/sil e nanowi es ilms and
e ec s o chemical educ ion and gamma i adia ion. Syn h Me .
h ps:// doi. o g/ 10. 1016/j. syn h me . 2021. 116980
57. Fe a i AC (2007) Raman spec oscopy o g aphene and g aph-
i e: diso de , elec on–phonon coupling, doping and nonadiaba ic
e ec s. Solid S a e Commun. h ps:// doi. o g/ 10. 1016/j. ssc. 2007.
03. 052
58. D esselhaus MS, D esselhaus G, Ho mann M (2008) Raman
spec oscopy as a p obe o g aphene and ca bon nano ubes.
Philos T ans A Ma h Phys Eng Sci. h ps:// doi. o g/ 10. 1098/ s a.
2007. 2155
59. Casi aghi C, Ha schuh A, Qian H, Piscanec S, Geo gi C, Fasoli
A, No oselo KS, Basko DM, Fe a i AC (2009) Raman spec-
oscopy o g aphene edges. Nano Le . h ps:// doi. o g/ 10. 1021/
nl803 2697
60. Kim YA, Fujisawa K, Mu ama su H, Hayashi T, Endo M, Fuji-
mo i T, Kaneko K, Te ones M, Beh ends J, Eckmann A, Casi -
aghi C, No oselo KS, Sai o R, D esselhaus MS (2012) Raman
spec oscopy o bo on-doped single-laye g aphene. ACS Nano.
h ps:// doi. o g/ 10. 1021/ nn301 728j
61. Fe a i AC, Basko DM (2013) Raman spec oscopy as a e sa ile
ool o s udying he p ope ies o g aphene. Na Nano echnol.
h ps:// doi. o g/ 10. 1038/ nnano. 2013. 46
62. Kuma J, Ansh, and Sh i as a a M, (2020) S one-wales de ec
and acancy-assis ed enhanced a omic o bi al in e ac ions
be ween g aphene and ambien gases: a i s -p inciples insigh .
ASC Omega. h ps:// doi. o g/ 10. 1021/ acsom ega. 0c047 29
63. Qi JL, Wang X, Lin JH, Zhang F, Feng JC, Fei WD (2015) A
high-pe o mance supe capaci o o e ically-o ien ed ew-lay-
e ed g aphene wi h high-densi y de ec s. Nanoscale. h ps:// doi.
o g/ 10. 1039/ c4n 0 7284g
64. Joh a FT, Lee JW, Jung WG (2014) Facile and sa e g aphene
p epa a ion on solu ion based pla o m. J Ind Eng Chem. h ps://
doi. o g/ 10. 1016/j. jiec. 2013. 11. 022
65. To isi L, Silipigni L, Cu oneo M, To isi A (2020) G aphene
oxide as a adia ion sensi i e ma e ial o XPS dosime y. Vac-
uum. h ps:// doi. o g/ 10. 1016/j. acuum. 2020. 109175
66. Rabchinskii MK, Dideikin AT, Ki ilenko DA, Baidako a MV,
Shni o VV, Ro h F, Konyakhin SV, Besedina NA, Pa lo SI,
Ku icyn RA, Lebede a NM, B unko PN, Vul’ AY (2018) Facile
educ ion o g aphene oxide suspensions and ilms using glass
wa e s. Sci Rep. h ps:// doi. o g/ 10. 1038/ s41598- 018- 32488-x
67. Çiplak Z, Yildiz N, Çalimli A (2015) In es iga ion o g aphene/
Ag nanocomposi es syn hesis pa ame e s o wo di e en syn-
hesis Me hods. Fulle Nano ub Ca bon Nanos uc . h ps:// doi.
o g/ 10. 1080/ 15363 83x. 2014. 894025
68. Su ekha G, K ishnaiah KV, Ra i N, Padma Su a na R (2020)
FTIR, Raman and XRD analysis o g aphene oxide ilms p e-
pa ed by modi ied Humme s me hod. J Phys Con Se . h ps://
doi. o g/ 10. 1088/ 1742- 6596/ 1495/1/ 012012
69. A agaw BA (2020) Reduced g aphene oxide-in e cala ed g a-
phene oxide nano-hyb id o enhanced pho oelec ochemical
wa e educ ion. J Nanos uc u e Chem. h ps:// doi. o g/ 10. 1007/
s40097- 019- 00324-x
70. Saleem H, Hanee M, Abbasi HY (2018) Syn hesis ou e o
educed g aphene oxide ia he mal educ ion o chemically
ex olia ed g aphene oxide. Ma e Chem Phys. h ps:// doi. o g/
10. 1016/j. ma ch emphys. 2017. 10. 020
71. Al-Gaashani R, Najja A, Zaka ia Y, Mansou S, A ieh MA
(2019) XPS and s uc u al s udies o high quali y g aphene oxide
and educed g aphene oxide p epa ed by di e en chemical oxi-
da ion me hods. Ce am In . h ps:// doi. o g/ 10. 1016/j. ce am in .
2019. 04. 165
72. Pa edes JI, Villa -Rodil S, Solís-Fe nández P, Ma ínez-Alonso
A, Tascón JMD (2009) A omic o ce and scanning unneling
mic oscopy imaging o g aphene nanoshee s de i ed om g aph-
i e oxide. Langmui . h ps:// doi. o g/ 10. 1021/ la804 216z
73. Gammelgaa d L, Ca idad JM, Cagliani A, Mackenzie PDH,
Boo h TJ, Bøggild P (2014) G aphene anspo p ope ies
upon exposu e o PMMA p ocessing and hea ea men s. 2D
Ma e .h ps:// doi. o g/ 10. 1088/ 2053- 1583/1/ 3/ 035005
74. Dubin S, Gilje S, Wang K, Tung VC, Cha K, Hall AS, Fa a J,
Va shneya R, Yang Y, Kane RB (2010) A one-s ep, sol o he mal
educ ion me hod o p oducing educed g aphene oxide dispe -
sions in o ganic sol en s. ACS Nano. h ps:// doi. o g/ 10. 1021/
nn100 511a
75. Chen C, Yang Q-H, Yang Y, L W, Wen Y, Hou P-X, Wang M,
Cheng H-M (2009) Sel -assembled ee-s anding g aphi e oxide
memb ane. Ad Ma e . h ps:// doi. o g/ 10. 1002/ adma. 20080 3726
76. Dikin DA, S anko ich S, Zimney EJ, Pine RD, Domme GHB,
E menenko G, Nguyen ST, Ruo RS (2007) P epa a ion and
cha ac e iza ion o g aphene oxide pape . Na u e. h ps:// doi. o g/
10. 1038/ na u e06016
77. Azizighannad S, Mi a S (2018) S epwise educ ion o g aphene
oxide (GO) and i s e ec s on chemical and colloidal p ope ies.
Sci Rep. h ps:// doi. o g/ 10. 1038/ s41598- 018- 28353-6
78. Lo én K, F anzén SM, Isaxon C, Messing ME, Ma insson J,
Gudmundsson A, Pagels J, Hedme M, NanoLund (2021) Emis-
sions and exposu es o g aphene nanoma e ials, i anium diox-
ide nano ibe s, and nanopa icles du ing down-s eam indus ial
handling. J Expo Sci En i on Epidemiol. h ps:// doi. o g/ 10. 1038/
s41370- 020- 0241-3
79. Qian L, Thi uppa hi AR, Elmahdy R, an de Zalm J, Chen A
(2020) G aphene-oxide-based elec ochemical senso s o he
sensi i e de ec ion o pha maceu ical d ug nap oxen. Senso s.
h ps:// doi. o g/ 10. 3390/ s2005 1252
80. Gómez-Na a o C, Meye JC, Sunda am RS, Chu ilin A, Ku a-
sch S, Bu gha d M, Ke n K, Kaise U (2010) A omic s uc u e
o educed g aphene oxide. Nano Le . h ps:// doi. o g/ 10. 1021/
nl903 1617
81. Szabo T, Ma oni P, Szilagyi I (2020) Size-dependen agg ega-
ion o g aphene oxide. Ca bon. h ps:// doi. o g/ 10. 1016/j. ca bon.
2020. 01. 022
82. Konkena B, Vasude an S (2012) Unde s anding aqueous dispe s-
ibili y o g aphene oxide and educed g aphene oxide h ough
pKa measu emen s. J Phys Chem Le . h ps:// doi. o g/ 10. 1021/
jz300 236w
83. Pa k WK, Yoon Y, Kim S, Choi SY, Yoo S, Do Y, Jung S, Yoon
DH, Pa k H, Yang WS (2017) Towa d g een syn hesis o g a-
phene oxide using ecycled sul u ic acid ia Coue e–Taylo low.
ACS Omega. h ps:// doi. o g/ 10. 1021/ acsom ega. 6b003 52
84. P iyada sini S, Mohan y S, Mukhe jee S, Basu S, Mish a M
(2018) G aphene and g aphene oxide as nanoma e ials o medi-
cine and biology applica ion. J Nanos uc Chem. h ps:// doi. o g/
10. 1007/ s40097- 018- 0265-6
78 G aphene and 2D Ma e ials (2023) 8:59–80
1 3
85. Raccichini R, Va zi A, Passe ini S, Sc osa i B (2015) The ole o
g aphene o elec ochemical ene gy s o age. Na Ma e . h ps://
doi. o g/ 10. 1038/ nma 4 170
86. Velasco A, Ryu YK, Boscá A, Lad ón-de-Gue a a A, Hun E,
Zuo J, Ped ós J, Calle F, Ma inez J (2021) Recen ends in g a-
phene supe capaci o s: om la ge a ea o mic osupe capaci o s.
Sus ain Ene gy Fuels. h ps:// doi. o g/ 10. 1039/ d0se0 1849j
87. G ande L, Chundi VT, Wei D, Bowe C, And ew P, Ryhänen
T (2012) G aphene o ene gy ha es ing/s o age de ices and
p in ed elec onics. Pa icuology. h ps:// doi. o g/ 10. 1016/j. pa ic.
2011. 12. 001
88. Lü M, Li J, Yang X, Zhang C, Yang J, Hu H, Wang X (2013)
Applica ions o g aphene-based ma e ials in en i onmen al p o-
ec ion and de ec ion. Chin Sci Bull. h ps:// doi. o g/ 10. 1007/
s11434- 013- 5887-y
89. Liang J, Wang Y, Huang Y, Ma Y, Liu Z, Cai J, Zhang C, Gao
H, Chen Y (2009) Elec omagne ic in e e ence shielding o
g aphene/epoxy composi es. Ca bon. h ps:// doi. o g/ 10. 1016/j.
ca bon. 2008. 12. 038
90. Lo a G (2012) Equi alen ci cui o elec omagne ic in e ac ion
and ansmission h ough g aphene shee s. IEEE T ans Elec o-
magn. h ps:// doi. o g/ 10. 1109/ TEMC. 2011. 21690 72
91. Hong SK, Kim KY, Kim TY, Kim JH, Pa k SW, Kim JH, Cho
BJ (2012) Elec omagne ic in e e ence shielding e ec i eness
o monolaye g aphene. Nano echnology. h ps:// doi. o g/ 10. 1088/
0957- 4484/ 23/ 45/ 455704
92. Lu Z, Ma L, Tan J, Wang H, Ding X (2016) T anspa en mul i-
laye g aphene/polye hylene e eph hala e s uc u es wi h excel-
len mic owa e abso p ion and elec omagne ic in e e ence
shielding pe o mance. Nanoscale. h ps:// doi. o g/ 10. 1039/ c6n 0
2619b
93. D esselhaus MS, Jo io A, Souza Filho AG, Sai o R (2010) De ec
cha ac e iza ion in g aphene and ca bon nano ubes using Raman
spec oscopy. Philos T ans A Ma h Phys Eng Sci. h ps:// doi. o g/
10. 1098/ s a. 2010. 0213
94. Zhang L, Al a ez NT, Zhang M, Haase M, Malik R, Mas D,
Shano V (2015) P epa a ion and cha ac e iza ion o g aphene
pape o elec omagne ic in e e ence shielding. Ca bon. h ps://
doi. o g/ 10. 1016/j. ca bon. 2014. 10. 080
95. Palio a L, De Bellis G, Tambu ano A, Ma a F, Rinaldi A,
Balijepalli SK, Kaciulis S, Sa o MS (2015) Highly conduc i e
mul ilaye -g aphene pape as a lexible ligh weigh elec omag-
ne ic shield. Ca bon. h ps:// doi. o g/ 10. 1016/j. ca bon. 2015. 03.
043
96. Lin S, Ju S, Zhang J, Shi G, He Y, Jiang D (2019) Ul a hin lex-
ible g aphene ilms wi h high he mal conduc i i y and excel-
len EMI shielding pe o mance using la ge-sized g aphene oxide
lakes. RSC Ad . h ps:// doi. o g/ 10. 1039/ C8RA0 9376H
97. Liu X, Wu W, Guo B, Cui M, Ma H, Zhang Z, Zhang R (2021)
Facile ab ica ion o ul a hin g aphene ilm wi h ul ahigh
elec ical conduc i i y and supe b elec omagne ic in e e ence
shielding e ec i eness. J Ma e Chem C. h ps:// doi. o g/ 10. 1039/
D0TC0 4576D
98. Wan YJ, Zhu PL, Yu SH, Sun R, Wong C, Liao WH (2017) G a-
phene pape o excep ional EMI shielding pe o mance using
la ge-sized g aphene oxide shee s and doping s a egy. Ca bon.
h ps:// doi. o g/ 10. 1016/j. ca bon. 2017. 06. 042
99. Shahzad F, Kuma P, Kim YH, Hong SM, Koo CM (2016) Bio-
mass-de i ed he mally annealed in e connec ed sul u -doped
g aphene as a shield agains elec omagne ic in e e ence. ACS
Appl Ma e In e aces. h ps:// doi. o g/ 10. 1021/ acsami. 6b004 18
100. Shahzad F, Kuma P, Yu S, Lee S, Kim YH, Hong SM, Koo
CM (2015) Sul u -doped g aphene lamina es o EMI shielding
applica ions. J Ma e Chem C. h ps:// doi. o g/ 10. 1039/ C5TC0
2166A
101. Lin S, Ju S, Shi G, Zhang J, He Y, Jiang D (2019) Ul a hin
ni ogen-doping g aphene ilms o lexible and s e chable
EMI shielding ma e ials. J Ma e Sci. h ps:// doi. o g/ 10. 1007/
s10853- 019- 03372-4
102. Yu omo EB, Noo FA, Wina a T (2021) E ec o he numbe o
ni ogen dopan s on he elec onic and magne ic p ope ies o
g aphi ic and py idinic N-doped g apheme—a densi y- unc ional
s udy. RSC Ad . h ps:// doi. o g/ 10. 1039/ d1 a0 1095
103. Zhang Y, Fu Y, Mao Q, Zhang G, Zhang W, Wang Y, Yang
W (2022) Fi s -p inciple calcula ion o elec onic s uc u e and
op ical p ope ies o (P, Ga, P–Ga) doped g aphene. Open Phys.
h ps:// doi. o g/ 10. 1515/ phys- 2022- 0061
104. Zhang Y, Zhang G, Shi X, Gao Q, Huang F, Xiao R (2021) A
lexible and s ong educed g aphene oxide ilm o high-pe o -
mance elec omagne ic shielding. Compos Commun. h ps:// doi.
o g/ 10. 1016/j. coco. 2021. 100954
105. Eswa aiah V, Sanka ana ayanan V, Ramap abhu S (2011) Func-
ionalized g aphene–PVDF oam composi es o EMI shielding.
Mac omol Ma e Eng. h ps:// doi. o g/ 10. 1002/ mame. 20110 0035
106. Oli ei a FM, Luxa J, Bouša D, So e Z, Gusmão R (2022) Elec-
omagne ic in e e ence shielding by educed g aphene oxide
oils. ACS Appl Nano Ma e . h ps:// doi. o g/ 10. 1021/ acsanm.
2c007 85
107. Huang M, Wang C, Quân L, Nguyen T, Zhang H, Jiang Y,
Byun G, Ruo R (2020) CVD g ow h o po ous g aphene oam
in ilm o m. Ma e . h ps:// doi. o g/ 10. 1016/j. ma . 2020. 06.
012
108. Chen C, Zhao Y, Wei W, Tao J, Lei G, Jia D, Wan M, Li S, Ji
S, Ye C (2017) Fab ica ion o sil e nanowi e anspa en con-
duc i e ilms wi h an ul a-low haze and ul a-high uni o mi y
and hei applica ion in anspa en elec onics. J Ma e Chem C.
h ps:// doi. o g/ 10. 1039/ c6 c0 5455b
109. Ge lein LF, Bena ides-Gue e o JA, Clou ie SG (2021) High-
pe o mance sil e nanowi es anspa en conduc i e elec-
odes ab ica ed using manu ac u ing- eady high-speed pho-
onic sin e iza ion solu ions. Sci Rep. h ps:// doi. o g/ 10. 1038/
s41598- 021- 03528-w
110. Wang P, Jian M, Wu M, Zhang C, Zhou C, Ling X, Zhang J,
Yang L (2022) Highly sandwich-s uc u ed sil e nanowi e
hyb id anspa en conduc i e ilms o lexible anspa en hea e
applica ions. Compos Pa A Appl Sci. h ps:// doi. o g/ 10. 1016/j.
compo si esa. 2022. 106998
111. Jiu J, Sugaha a T, Nogi M, Nagao S, Suganuma K (2013) Sil e
nanowi es anspa en conduc i e ilms: ab ica ion using di e -
en sin e ing echniques.In:2013 13 h IEEE in e na ional con e -
ence on nano echnology (IEEE-NANO 2013).
112. De S, Higgins TM, Lyons PE, Dohe y EM, Ni mal aj PN, Blau
WJ, Boland JJ, Coleman JN (2009) Sil e nanowi e ne wo ks
as lexible, anspa en , conduc ing ilms ex emely high DC o
op ical conduc i i y a ios. ACS Nano. h ps:// doi. o g/ 10. 1021/
nn900 348c
113. Amjadi M, Pichi pajongki A, Lee S, Ryu S, Pa k I (2014) Highly
s e chable and sensi i e s ain senso based on sil e nanowi e-
elas ome nanocomposi e. ACS Nano. h ps:// doi. o g/ 10. 1021/
nn501 204
114. Chae WH, Sannicolo T, G ossman JC (2020) Double-sided g a-
phene oxide encapsula ed sil e nanowi e anspa en elec ode
wi h imp o ed chemical and elec ical s abili y. ACS Appl Ma e
In e aces. h ps:// doi. o g/ 10. 1021/ acsami. 0c035 87
115. Wu C, Fang L, Huang X, Jiang P (2014) Th ee-dimensional
highly conduc i e g aphene-sil e nanowi e hyb id oams o
lexible and s e chable conduc o s. ACS Appl Ma e In e aces.
h ps:// doi. o g/ 10. 1021/ am505 908d
116. Qian F, Lan PC, F eyman MC, Chen W, Kou T, Olson TY, Zhu
C, Wo sley MA, Duoss EB, Spadaccini CM, Baumann T, Han
79G aphene and 2D Ma e ials (2023) 8:59–80
1 3
TYJ (2017) Ul aligh conduc i e sil e nanowi e ae ogels. Nano
Le . h ps:// doi. o g/ 10. 1021/ acs. nanol e . 7b027 90
117. Lu Y, Jiang J, Yoon S, Kim KS, Kim JH, Pa k S, Kim SH, Piao
L (2018) High-pe o mance s e chable conduc i e composi e
ibe s om su ace-modi ied sil e nanowi es and he moplas-
ic polyu e hane by we spinning. ACS Appl Ma e In e aces.
h ps:// doi. o g/ 10. 1021/ acsami. 7b160 22
118. Fo in E, Weichman FL (1964) Pho oconduc i i y in Ag2O. Phys
S a us Solidi B. h ps:// doi. o g/ 10. 1002/ pssb. 19640 050308
119. Mayousse C, Celle C, F aczkiewicz A, Simona o JP (2015) S a-
bili y o sil e nanowi e based elec odes unde en i onmen al
and elec ical s esses. Nanoscale. h ps:// doi. o g/ 10. 1039/ c4n 0
6783e
120. G aedel TE (1992) Co osion mechanisms o sil e exposed o
he a mosphe e. J Elec ochem Soc doi 10(1149/1):2221162
121. F aney JP, Kammlo GW, G aedel TE (1985) The co osion o
sil e by a mosphe ic sul u ous gases. Co os Sci. h ps:// doi. o g/
10. 1016/ 0010- 938X(85) 90104-0
122. Hebb MH (2004) Elec ical conduc i i y o sil e sul ide. J Chem
Phys. h ps:// doi. o g/ 10. 1063/1. 17001 65
123. Zhang Y, Bai S, Chen T, Yang H, Guo X (2020) Facile p epa a-
ion o lexible and highly s able g aphene oxide-sil e nanow-
i e hyb id anspa en conduc i e elec ode. Ma e Res Exp ess.
h ps:// doi. o g/ 10. 1088/ 2053- 1591/ ab6262
124. Hu M, Gao J, Dong Y, Li K, Shan G, Yang S, Li RKY (2012)
Flexible anspa en PES/sil e nanowi es/PET sandwich-s uc-
u ed ilm o high-e iciency elec omagne ic in e e ence shield-
ing. Langmui . h ps:// doi. o g/ 10. 1021/ la300 720y
125. Yu YH, Ma CCM, Teng CC, Huang YL, Lee SH, Wang I, Wei
MH (2012) Elec ical, mo phological, and elec omagne ic in e -
e ence shielding p ope ies o sil e nanowi es and nanopa i-
cles conduc i e composi es. Ma e Chem Phys. h ps:// doi. o g/
10. 1016/j. ma ch emphys. 2012. 05. 024
126. Fang F, Li YQ, Xiao HM, Hu N, Fu SY (2016) Laye -s uc u ed
sil e nanowi e/polyaniline composi e ilm as a high pe o mance
X-band EMI shielding ma e ial. J Ma e Chem C 4:4193–4203.
h ps:// doi. o g/ 10. 1039/ c5 c0 4406e
127. Wan YJ, Zhu PL, Yu SH, Sun R, Wong CP, Liao WH (2018)
An ico osi e, ul aligh , and lexible ca bon-w apped me allic
nanowi e hyb id sponges o highly e icien elec omagne ic
in e e ence shielding. Small. h ps:// doi. o g/ 10. 1002/ smll. 20180
0534
128. Jia LC, Ding KQ, Ma RJ, Wang HL, Sun WJ, Yan DX, Li B, Li
ZM (2019) Highly conduc i e and machine-washable ex iles
o e icien elec omagne ic in e e ence shielding. Ad Ma e
Technol. h ps:// doi. o g/ 10. 1002/ adm . 20180 0503
129. Liu LX, Chen W, Zhang HB, Wang QW, Guan F, Yu ZZ (2019)
Flexible and mul i unc ional silk ex iles wi h biomime ic lea -
like MXene/sil e nanowi e nanos uc u es o elec omagne ic
in e e ence shielding, humidi y moni o ing, and sel -de i ed
hyd ophobici y. Ad Func Ma e . h ps:// doi. o g/ 10. 1002/ ad m.
20190 5197
130. Zhou B, Su M, Yang D, Han G, Feng Y, Wang B, Ma J, Liu C,
Shen C (2020) Flexible MXene/sil e nanowi e-based anspa -
en conduc i e ilm wi h elec omagne ic in e e ence shielding
and elec o-pho o- he mal pe o mance. ACS Appl Ma e In e -
aces. h ps:// doi. o g/ 10. 1021/ acsami. 0c090 20
131. Chen W, Liu LX, Zhang HB, Yu ZZ (2020) Flexible anspa -
en , and conduc i e Ti3C2TxMXene-sil e nanowi e ilms wi h
sma acous ic sensi i i y o high-pe o mance elec omagne ic
in e e ence shielding. ACS Nano. h ps:// doi. o g/ 10. 1021/ acsna
no. 0c016 35
132. Cheng Y, Lu Y, Xia M, Piao L, Liu Q, Li M, Zhou Y, Jia K, Yang
L, Wang D (2021) Flexible and ligh weigh MXene/sil e nanow-
i e/polyu e hane composi e oam ilms o highly e icien elec-
omagne ic in e e ence shielding and pho o he mal con e sion.
Compos Sci Technol. h ps:// doi. o g/ 10. 1016/j. comps ci ech.
2021. 109023
133. Liu J, Zhang Y, Cheng W, Lei S, Song L, Wang B, Hu Y (2022)
An i- ogging, os - esis an anspa en and lexible sil e
nanowi e-Ti3C2Tx MXene based composi e ilms o excellen
elec omagne ic in e e ence shielding abili y. J Colloid In e ace
Sci. h ps:// doi. o g/ 10. 1016/j. jcis. 2021. 10. 171
134. Ma Z, Feng H, Feng Y, Ding X, Wang X, Wang W, Zhang X,
Kong S, Lan X, Li Q (2022) An ul aligh and he mally con-
duc i e Ti3C2Tx MXene-sil e nanowi e cellula composi e ilm
o high-pe o mance elec omagne ic in e e ence shielding. J
Ma e Chem C. h ps:// doi. o g/ 10. 1039/ d2 c0 2856e
135. Liu J, Lin S, Huang K, Jia C, Wang Q, Li Z, Song J, Liu Z, Wang
H, Lei M, Wu H (2020) A la ge-a ea AgNW-modi ied ex ile
wi h high-pe o mance elec omagne ic in e e ence shielding.
npj Flex Elec on. h ps:// doi. o g/ 10. 1038/ s41528- 020- 0074-0
136. Yang S, Wang YY, Song YN, Jia LC, Zhong GJ, Xu L, Yan DX,
Lei J, Li ZM (2021) Ul a hin, lexible and sandwich-s uc u ed
PHBV/sil e nanowi e ilms o high-e iciency elec omagne ic
in e e ence shielding. J Ma e Chem C. h p s:// doi. o g/ 10. 1039/
d0 c0 5266c
137. Hong W, Sun B, Li Z, Fu Z, Zhang J, Jiang M, Zhang Y, Li Y,
Qian K (2022) Biodeg adable, Flexible T anspa en O de ed
Ag NWs Mic omesh Conduc o o Elec ical Hea e and Elec-
omagne ic In e e ence Shielding Applica ions. ACS Appl
Elec on Ma e . h ps:// doi. o g/ 10. 1021/ acsae lm. 2c011 09
138. Zhang F, Hu J, Zhao P, He P, Mi HY, Guo Z, Liu C, Shen C
(2021) Mul i unc ional elec omagne ic in e e ence shielding
ilms comp ised o mul ilaye ed he moplas ic polyu e hane
memb ane and sil e nanowi e. Compos Pa A Appl Sci.
h ps:// doi. o g/ 10. 1016/j. compo si esa. 2021. 106472
139. Huang X, Wang L, Shen Z, Ren J, Chen G, Li Q, Zhou Z
(2022) Supe -s e chable and sel -healing hyd ogel wi h a
h ee-dimensional sil e nanowi es ne wo k s uc u e o wea -
able senso and elec omagne ic in e e ence shielding. J Chem
Eng. h ps:// doi. o g/ 10. 1016/j. cej. 2022. 137136
140. Zhang X, Shan J, Liu C, Li Z, Guo X, Zhao X, Yang H (2022)
High co osion- esis an sil e nanowi e/poly(3,4-e hylene
dioxy hiophene)/poly (s y ene sul ona e)@nickel elec ode o
anspa en elec omagne ic shielding ilm. J Ma e . h ps:// doi.
o g/ 10. 1016/j. jma . 2022. 05. 008
141. Zhang B, Liu D, Liang Y, Zhang D, Yan H, Zhang Y (2017)
Flexible anspa en and conduc i e ilms o educed-g aphene-
oxide w apped sil e nanowi es. Ma e Le . h ps:// doi. o g/ 10.
1016/j. ma le . 2017. 04. 137
142. Liu X, Chen T, Liang H, Qin F, Yang H, Guo X (2019) Facile
app oach o a obus g aphene/sil e nanowi es ae ogel wi h
high-pe o mance elec omagne ic in e e ence shielding. RSC
Ad . h ps:// doi. o g/ 10. 1039/ C8RA0 8738E
143. Yan S, Li P, Ju Z, Chen H, Ma J (2021) Elec omagne ic in e -
e ence shielding pe o mance enhancemen o s e chable
anspa en conduc ing sil e nanowi e ne wo ks wi h g aphene
encapsula ion. J Ma e Sci Ma e Elec on. h ps:// doi. o g/ 10.
1007/ s10854- 021- 06096-x
144. Jia H, Yi YL, Huang XH, Su FY, Kong QQ, Yang X, Wang
Z, Xie LJ, Guo QG, Chen CM (2021) A one-s ep g aphene
induc ion s a egy enables in-si u con ollable g ow h o sil e
nanowi es o elec omagne ic in e e ence shielding. Ca bon.
h ps:// doi. o g/ 10. 1016/j. ca bon. 2021. 07. 067
145. Giasa aki D, Mi zi h a C, Belessi V, Filippakopoulou T, Kou -
sioukis A, Geo gakilas V, Cha alambopoulou G, S e io is T
(2022) G aphene-based composi es wi h sil e nanowi es o
elec onic applica ions nanoma e ials. Nanoma e ials. h ps://
doi. o g/ 10. 3390/ nano1 21934 43
146. Łapińska A, G ochowska N, Filak K, Michalski P, Szymański
KR, Zaleski PA, Dydek K, Daniszewska A, Że ańska K,

80 G aphene and 2D Ma e ials (2023) 8:59–80
1 3
Dużyńska A, Kowalczyk S, Plich a A (2023) Non-me allic
mul i unc ional PVDF – g aphene nanopla ele s nanocompos-
i es as an e ec i e elec omagne ic shield, he mal and elec-
ical conduc o . Ma e Today Ad . h ps:// doi. o g/ 10. 1016/j.
m ad . 2023. 100365
147. Mu lu G, Yıldı ım F, Ulus H, Eskizeybek V (2023) Coa ing
g aphene nanopla ele s on o ca bon ab ic wi h con olled
hickness o imp o ed mechanical pe o mance and EMI
shielding e ec i eness o ca bon/epoxy composi es. Eng F ac
Mech. h ps:// doi. o g/ 10. 1016/j. eng acmech. 2023. 109271
148. Wu C, Zeng L, Chang G, Zhou Y, Yan K, Xie L, Xue B, Zheng
Q (2023) Composi e phase change ma e ials embedded in o
cellulose/polyac ylamide/g aphene nanoshee s/sil e nanowi e
hyb id ae ogels simul aneously wi h e ec i e he mal man-
agemen and aniso opic elec omagne ic in e e ence shield-
ing. Ad Compos Hyb id Ma e . h ps:// doi. o g/ 10. 1007/
s42114- 022- 00618-9
149. Zhang F, Ren P, Guo H, Zhang Z, Guo Z, Dai Z, Lu Z, Jin Y,
Ren F (2021) Flexible and conduc i e cellulose composi e pape
o highly e icien elec omagne ic in e e ence shielding. Ad
Elec on Ma e . h ps:// doi. o g/ 10. 1002/ aelm. 20210 0496
150. Zhu M, Yan X, Li X, Dai L, Guo J, Lei Y, Xu Y, Xu H (2022)
Flexible, anspa en , and hazy composi e cellulosic ilm wi h
in e connec ed sil e nanowi e ne wo ks o EMI shielding and
joule hea ing. ACS Appl Ma e In e aces. h ps:// doi. o g/ 10.
1021/ acsami. 2c130 35
151. Hu G, Wu C, Wang Q, Dong F, Xiong Y (2022) Ul a hin nano-
composi e ilms wi h asymme ic g adien al e na ing mul ilaye
s uc u es exhibi supe high elec omagne ic in e e ence shield-
ing pe o mances and obus mechanical p ope ies. J Chem Eng.
h ps:// doi. o g/ 10. 1016/j. cej. 2022. 137537
152. Nimbalka P, Ko de A, Goyal RK (2018) Elec omagne ic
in e e ence shielding o polyca bona e/GNP nanocomposi es
in X-band. Ma e Chem Phys. h ps:// doi. o g/ 10. 1016/j. ma ch
emphys. 2017. 12. 027
153. Wang Y, Jing X (2005) In insically conduc ing polyme s o
elec omagne ic in e e ence shielding. Polym Ad Technol.
h ps:// doi. o g/ 10. 1002/ pa . 589
154. Sushmi a K, Mad as G, Bose S (2021) The jou ney o poly-
ca bona e-based composi es owa ds supp essing elec omag-
ne ic adia ion. Func Compos Ma e . h ps:// doi. o g/ 10. 1186/
s42252- 021- 00025-1
155. Cao M, Lian H, Hu C (2010) Ligand-assis ed ab ica ion o hol-
low CdSe nanosphe es ia Os wald ipening and hei mic owa e
abso p ion p ope ies. Nanoscale. h ps:// doi. o g/ 10. 1039/ c0n 0
0674b
156. Valenzuela M, Bosch P, Jiménez-Bece ill J, Qui oz O, Páez A
(2002) P epa a ion, cha ac e iza ion and pho oca aly ic ac i i y
o ZnO, Fe2O3 and ZnFe2O4. J Pho ochem Pho obiol A. h ps://
doi. o g/ 10. 1016/ S1010- 6030(02) 00040-0
157. Menon AV, Mad as G, Bose S (2019) Mussel-inspi ed sel -heal-
ing polyu e hane wi h “ lowe -like” magne ic MoS2 as e icien
mic owa e abso be s. ACS Appl Polym Ma e . h ps:// doi. o g/
10. 1021/ acsapm. 9b005 38
158. Moučka R, Sedlačík M, P okeš J, Kaspa yan H, Val e a S,
Kopecký D (2020) Elec omagne ic in e e ence shielding o
polypy ole nanos uc u es. Syn Me . h ps:// doi. o g/ 10. 1016/j.
syn h me . 2020. 116573
159. Dabas S, Chaha M, Thaku OP (2022) Elec omagne ic
in e e ence shielding p ope ies o CoFe2O4/polyaniline/
poly( inylidene luo ide) nanocomposi es. Ma e Chem Phys.
h ps:// doi. o g/ 10. 1016/j. ma ch emphys. 2021. 125579
160. Zubai K, Ash a A, Gulza H, Shaki MF, Nawab Y, Rehan
ZA, Rashid IA (2021) S udy o mechanical, elec ical and EMI
shielding p ope ies o polyme -based nanocomposi es inco po-
a ing polyaniline coa ed g aphene nanopa icles. Nano Exp ess.
h ps:// doi. o g/ 10. 1088/ 2632- 959X/ abe843
161. Awad EH, El-Nem KF, A a MM, Abdel-Hakim A, Sha a A
(2023) Elec omagne ic in e e ence shielding e iciency o i a-
dia ed wood-plas ic composi es based on g aphene oxide nano-
pa icles. Radia Phys Chem. h ps:// doi. o g/ 10. 1016/j. adph
yschem. 2022. 110629
162. Kim S, Oh JS, Kim MG, Jang W, Wang M, Kim Y, Seo HW, Kim
YC, Lee JH, Lee Y, Nam JD (2014) Elec omagne ic in e e ence
(EMI) anspa en shielding o educed g aphene oxide (RGO)
in e lea ed s uc u e ab ica ed by elec opho e ic deposi ion.
ACS Appl Ma e In e aces 6:17647–17653. h ps:// doi. o g/ 10.
1021/ am503 893
163. Ba ako K, Kuzhi P, Maksimenko S, Paddubskaya A,
Vo ono ich S, Lambin P, Kaplas T, S i ko Y (2014) Flexible
anspa en g aphene/polyme mul ilaye s o e icien elec o-
magne ic ield abso p ion. Sci Repo . h ps:// doi. o g/ 10. 1038/
s ep0 7191
164. Han Y, Liu Y, Han L, Lin J, Jin P (2017) High-pe o mance
hie a chical g aphene/me al-mesh ilm o op ically anspa en
elec omagne ic in e e ence shielding. Ca bon. h ps:// doi. o g/
10. 1016/j. ca bon. 2016. 12. 092
165. T an VV, Nguyen DD, Nguyen TA, Ho mann M, Hsieh YP, Kan
HC, Hsu CC (2020) Elec omagne ic in e e ence shielding by
anspa en g aphene/nickel mesh ilms. ACS Appl Nano Ma e .
h ps:// doi. o g/ 10. 1021/ acsanm. 0c010 76
166. Ray B, Pa ma S, Da e K, Da a S (2021) Op ically anspa en
polyme composi es: a s udy on he in luence o ille /dopan on
elec omagne ic in e e ence shielding mechanism. J Appl Polym
Sci. h ps:// doi. o g/ 10. 1002/ app. 50255
167. Bai S, Guo X, Zhang X, Zhao X, Yang H (2021) Ti3C2Tx MXene
-AgNW composi e lexible anspa en conduc i e ilms o EMI
shielding. Compos Pa A Appl Sci. h ps:// doi. o g/ 10. 1016/j.
compo si esa. 2021. 106545
168. Reis FCD, Rezende MC, Ribei o B (2021) The in luence o he
anspa en laye hickness on he abso p ion capaci y o epoxy/
ca bon nano ube buckypape a X-band. J Appl Polym Sci.
h ps:// doi. o g/ 10. 1002/ app. 51407
169. Shi K, Su J, Liang H, Hu K, Xu J (2022) Highly op ically ans-
pa en g aphene mesh o elec omagne ic in e e ence shield-
ing. Diam Rela Ma e . h ps:// doi. o g/ 10. 1016/j. diamo nd. 2022.
108849
170. Wang G, Zhao Y, Yang F, Zhang Y, Zhou M, Ji G (2022) Mul-
i unc ional in eg a ed anspa en ilm o e icien elec o-
magne ic p o ec ion. Nano-Mic o Le . h ps:// doi. o g/ 10. 1007/
s40820- 022- 00810-y
Publishe 's No e Sp inge Na u e emains neu al wi h ega d o
ju isdic ional claims in published maps and ins i u ional a ilia ions.