160
IEEE JOURNAL
OF
SOLID-STATE CIRCUITS, VOL.
26,
NO.
2,
FEBRUARY
1991
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ol. 35, pp. 1096-1106, June 1988.
[5]
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K.
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A. Lindholm, and
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W. Jung, “Non-quasi-s a ic
small-signal models o semiconduc o junc ion diodes wi h
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bipola ansis o ,”
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Dec. 1986.
[8] B.
S.
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and
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A. Lindholm, “One-dimensional non-quasi-
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IEEE T ans. Elec on De ices,
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no.
4, pp. 727-737, Ap . 1989.
[9]
J.
A.
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“An
accu a e
pp. 883-885, 1987.
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in
IEDM Tech. Dig.,
1987, pp. 244-247.
[lo] J. E. Schu -Aine, “De e mina ion o a small-signal model o
ion-implan ed mic owa e ansis o s,”
IEEE T ans. Elec on
De ices,
ol. ED-30,
no.
7, pp. 750-758, July 1983.
111
R.
G. Gough, “High- equency ansis o modeling o ci cui
simula ion,”
IEEE
J.
Solid-s a e Ci cui s,
ol. SC-17,
no.
4, pp.
121 A.
B.
Macnee and R. J. Talsky, “High- equency ansis o
model o ci cui design,”
IEEE
J.
Solid-s a e Ci cui s,
ol.
131 R.
I.
Ohs and
S.
J. Ra ne , “Compu e -aided design and
op imiza ion o a b oad-band high equency monoli hic ampli-
ie ,”
IEEE
J.
Solid-s a e Ci cui s,
ol. SC-7, pp. 487-492, Dec.
1972.
[14]
S.
Kakihana and P. H. Wang, “Simple CAD echnique o
de elop high- equency ansis o s,”
IEEE
J.
Solid-s a e Ci -
cui s,
ol. SC-6,
no.
4, pp. 236-243, Aug. 1971.
[15]
J.
Lange and
W.
N.
Ca , “An applica ion o de ice modeling
o mic owa e powe ansis o s,”
IEEE
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Solid-s a e Ci cui s,
ol. SC-7,
no.
1,
pp. 71-80, Feb. 1972.
[16]
M.
K.
Chen, “Me hods o de eloping and assessing ci cui
models o bipola diodes and ansis o s,” Ph.D. disse a ion,
Uni . o Flo ida, Gaines ille, 1989, chs. 4 and 9.
[17] A.
B.
G ebene,
Bipola and MOS Analog In eg a ed Ci cui
Design.
[18] W. F. Da is, “Bipola design conside a ions o he au omo i e
en i onmen ,”
IEEE
J.
Solid-s a e Ci cui s,
ol. SC-8, pp.
419-426, Dec. 1973.
[19] P. R. Mo z and
W.
A. Vincen , “Au omo i e elec onics: De-
signing cus om ICs o a ha sh en i onmen ,” in
hoc. IEEE
Cus om In eg a ed Ci cui s Con ,
1983, pp. 392-398.
666-670, Aug. 1982.
SC-6, pp. 320-322, Aug. 1972.
New Yo k: Wiley, 1984, pp. 220-223.
CMOS
OTA-C
High-F equency Sinusoidal Oscilla o s
Be nab6 Lina es-Ba anco, Angel Rod iguez-VBzquez,
Edga S6nchez-Sinencio, and
Jos6
L. Hue as
Abs ac
-Se e al opology amilies a e gi en o implemen p ac ical
CMOS sinusoidal oscilla o s by using ope a ional ansconduc ance
ampli ie -capaci o (OTA-C) echniques. Design echniques a e p o-
posed aking in o accoun he CMOS
OTA’s
dominan nonideali ies.
Building blocks a e p esen ed
o
ampli ude con ol, bo h by AGC
schemes and by limi a ion schemes. Expe imen al esul s om
3-
and
2-pm CMOS (MOSIS) p o o ypes showing oscilla ion equencies up o
69
MHz a e ob ained. The ampli udes can he adjus ed be ween
1
V peak
o peak and
100
mV peak o peak. To al ha monic dis o ions om 2.8%
down o 0.2% ha e been expe imen ally measu ed in he labo a o y.
I. INTRODUCTION
HE
USE
OF
ci cui s composed o ope a ional anscon-
T
duc ance ampli ie s and capaci o s (OTA-C’s) has been
Manusc ip ecei ed Ma ch 8, 1990; e ised Sep embe 12, 1990.
B. Lina es-Ba anco,
A.
Rod iguez-Vizquez, and
J.
L.
Hue as we e
suppo ed by he Spanish CICYT unde Con ac ME87-0004.
B. Lina es-Ba anco is wi h he Depa men
o
Elec ical Enginee -
ing, Texas A&M Uni e si y, College S a ion,
TX
77843 and he Depa -
men o de Diseho Analbgico, Cen o Nacional de Mic oelec 6nica,
Uni e sidad de Se illa, 41012 Se illa, Spain.
A.
Rod iguez-Vizquez and
J.
L.
Hue as a e wi h he Depa men o
de Diseiio Anal6gico, Cen o Nacional de Mic oelec 6nica, Uni e si-
dad de Se illa, 41012 Se illa, Spain.
E.
Sinchez-Sinencio is wi h he Depa men
o
Elec ical Enginee -
ing, Texas A&M Uni e si y, College S a ion,
TX
77843.
IEEE Log Numbe 9041203.
demons a ed o be po en ially ad an ageous o he syn he-
sis o high- equency con inuous- ime monoli hic analog op-
e a o s, ei he linea
[1]-[4],
[ll]
o nonlinea
[5].
One basic
eason o he high- equency po en ial o hese ci cui s
comes om he ac ha he OTA is used in a local open
loop. I means ha
no
addi ional cons ain s a e imposed
on
he equency esponse due o local eedback-induced pole
displacemen s
[2].
Ano he ad an age o open-loop OTA-
based ci cui s is ha he ansconduc ance gain o he OTA
is
used as a design pa ame e .
In
a ypical OTA a chi ec u e
[12],
his gain can be adjus ed ei he by changing he ail
cu en o a di e en ial pai ( ine adjus men ) o by using
digi ally con olled cu en mi o s (coa se adjus men )
[4].
P og ammabili y is hence an inhe en p ope y o OTA-C
ci cui s. Based upon he p e ious conside a ions, i may be
expec ed ha he ansconduc ance ampli ie -capaci o
os-
cilla o s (TACO’s) o e come he limi a ions in equency and
unabili y o con en ional op-amp-based RC-ac i e oscilla-
o s. TACO’s could hen be applied o he design o high-
equency ol age-con olled sinusoidal oscilla o s (VCO’s)
wi h po en ial applica ion in communica ion sys ems
[6]
and
in
he uning
o
ac i e il e s
[l].
In
a companion pape
[7]
he au ho s ha e explo ed he syn hesis o TACO’s om
classical oscilla o models, namely quad a u e and bandpass-
based. The expe imen al esul s measu ed om disc e e
0018-9200/91/0200-0160$01
.OO
0
1991 IEEE
161
IEEE JOURNAL
OF
SOLID-STATE CIRCUITS, VOL.
26,
NO.
2,
FEBRUARY
1991
LA
--
Fig.
1.
Gene al
opology
o
he gene a ion
o
second-o de OTA-C
oscilla o s.
bipola p o o ypes showed good po en ial o he TACO'S o
high- equency VCO's.
Also,
a 3-pm CMOS TACO includ-
ing a limi ing mechanism o con olling he ampli ude has
been epo ed [8] exhibi ing a 10-MHz equency and THD
down o
0.2%.
In
his pape we i s p esen a numbe o
new a chi ec u es ha can be sys ema ically ob ained om a
gene al idealized TACO opology [9] and hen p o ide expe -
imen al esul s o
2-
and 3-pm CMOS p o o ypes up o 69
and
56
MHz, espec i ely. The esul s demons a e ha i is
possible o implemen high- equency monoli hic VCO oscil-
la o s based
on
simple OTA-C echniques and he modeling
o he dominan OTA pa asi ic e ec s [3], [7]. Fu he mo e,
we show ha based
on
a gene al TACO s uc u e, con en-
ional and uncon en ional s uc u es can be de i ed.
11.
OTA-C OSCILLATOR
STRUCTURES
ideally desc ibed by a second-o de cha ac e is ic equa ion:
In
his pape we a e ocusing
on
oscilla o s which can be
s2
-
bs
+
li
=
0.
(1)
Fig.
1
shows a gene al opology o a second-o de OTA-C
oscilla o s uc u e [9]. The ol age-con olled cu en sou ces
in his opology,
N
N
I,=
c
gllK
I2
=
c
g2lK
(
2)
i=l
i=l
can be implemen ed by connec ing OTAs in pa allel, one
pe each di e en e m in
(2).
Pa ame e s
b
and
Cli
a e gi en as unc ions o he OTA
ansconduc ance gains g,, and capaci o alues. The basic
TACO design goal is o achie e sepa a e con ol o hese
o me pa ame e s wi h a minimum componen coun . We
ha e sys ema ically ob ained di e en opologies om Fig.
1
o p o ide his ea u e. Some o he mo e in e es ing and
p ac ical ones a e shown in Fig.
2.
The co esponding ex-
p essions o
b
and
li
a e gi en in Table
I.
These s uc u es
in ol e a ade-o be ween complexi y and deg ees o ee-
dom. A one end we will ha e s uc u es wi h a minimum
numbe o componen s bu wi h a e y limi ed deg ee o
eedom. A he o he , he s uc u es will ha e la ge compo-
nen coun s and mo e deg ees o eedom. Ne e heless, we
belie e i is wo hwhile o include he di e en s uc u es
since hey a e applica ion dependen .
Ideally, o oscilla ion, he ansconduc ance gains o Fig.
2
mus be immed o yield
b
=O.
Howe e , in p ac ical
oscilla o s, due o he in luence o pa asi ics, he poles a e
displaced om hei nominal posi ions
(sp
=
jn,)
o ei he
he igh o he le side o he complex equency plane. Fo
ha eason, he oscilla o mus be designed o ha e i s poles
ini ially loca ed inside he igh -hal complex equency plane
in o de o assu e sel -s a ing ope a ion, i.e.,
b
E,
and
E
is
TABLE
I
STRUCTURES
IDEAL
EXPRESSIONS
OF
b
AND
FOR
THE
DIFFERENT
TACO
a sligh ly posi i e numbe [6]. Besides, nonlinea i ies ha e o
be conside ed o explain he exis ence o s able oscilla ions.
Using he na u al nonlinea sa u a ion cha ac e is ics o he
OTA is he simples o m o limi e . Connec ing a nonlinea
esis o wi h a d i ing-poin cha ac e is ic [7] is ano he
app oach p o iding be e con ollabili y. Finally, exploi ing
he bias e minals o he OTA's o implemen an au oma ic
gain con ol (AGC) mechanism is a mo e sophis ica ed
scheme equi ing addi ional ci cui y bu p o iding educed
ha monic dis o ion. These wo la e al e na i es, ex e nal
limi a ion and AGC, ha e been used in he p ac ical imple-
men a ions included he ein.
111.
INFLUENCE
OF
OTA
PARASITICS
In Table
I
we assume ha he OTA pe o ms as an ideal
ol age-con olled cu en sou ce. Some expe imen al e o s
can be expec ed as a consequence o using such an ideal
model. Fo ex eme equencies (bo h high and low) he
esul ing e o s a e e y la ge o be ole a ed. Hence, o
accu a e TACO design a hese ex eme equencies, OTA
pa asi ics canno be igno ed in analyzing he p oposed s uc-
u es. Expe imen al obse a ions [7], [ 101 e eal ha only
h ee pa asi ics ha e o be conside ed o ob ain a alid
design echnique up o a leas
69
MHz, as is demons a ed
in
he expe imen al esul s included in his pape :
a) ou pu conduc ance Go,,
1
Q
j
Q
4,
b) ou pu and inpu capaci ances, and
c) ansconduc ance equency dependency, g,,
The ollowing cha ac e is ic equa ion is ob ained by using
he desc ibing unc ion app oach and conside ing he in lu-
ence o pa asi ics:
g
mi
4s)
=
gmj(l
-
s/wj),
1
G
j
Q
4.
s2
-
b,s
+
li,
=
0
(3)
whe e
b,
and
Szi,
a e unc ions o he ansconduc ances
g,,(l
Q
j
Q
4),
capaci ances
Ci(l
Q
i
Q
3),
ou pu conduc-
ances GOj(l
<
j
Q
4),
and pa asi ic ze os wj(l
<
j
<
4).
,.
162
IEEE JOURNAL
OF
SOLID-STATE CIRCUITS, VOL.
26,
NO.
2,
FEBRUARY
1991
-J
/
I
--
--
(e)
Fig.
2.
OTA-C oscilla o s uc u es: (a) 20TA3C,
(b)
30TA2C, (c) 40TA2C, (d) quad a u e, and (e) 4OTA4C.
Pa asi ics make he TACO oscilla ion condi ion
b,
and he
oscilla o equency
Cl:,
depend
on
all he ansconduc ance
gains. I means ha any in en o change
Cl;,
by any
ansconduc ance gain will also p oduce a change in
b,
and,
hence, in he ampli ude o he oscilla ions. Fo ins ance, in
he 4OTA2C TACO, we can, ideally, change
Cl:,
ia
g,,
and
gm2,
wi hou a ec ing
b.
Howe e , when pa asi ics a e
aken in o accoun ,
g,,
and
g,,
mus also be uned o
main ain
b,
cons an . The in luence o pa asi ics can be
assessed om Fig. 3 co esponding o he 40TA2C TACO.
Fig. 3(a) shows imming cu es o he ansconduc ance
gains o he VCO ope a ion and assuming he OTA’s a e
ideal. Fig. 3(b) plo s he co esponding cu es in he case
whe e pa asi ics a e aken in o accoun . Obse e ha one o
he ansconduc ance gains
g,,
o
g,,
can be made ze o a
any equency. Fo low equencies i is possible o make
g,,
=
0
while a high equencies
g,,
=
0.
A low equen-
cies, he ou pu impedance (i.e., he OTA ol age gain) o
he OTA’s makes he oscilla o de ia e om he ideal
(non-
pa asi ic) beha io , while a high equencies, i is he
ansconduc ance equency dependence (excess phase) ha
p oduces he de ia ion. A way o a oid pe o mance deg a-
da ion due o pa asi ics and hence o yield high equencies
om he p oposed TACO’S is o use a p edis o ion ech-
nique based on he analysis o he pa asi ic’s in luence. We
ha e used his me hod. The expe imen al esul s we ha e
ob ained con i m he alidi y o ou app oach.
IV.
EXPERIMENTAL
RESULTS
Th ee oscilla o mic ochips we e designed and ab ica ed
in he CMOS p-well p ocess, ei he 3-pm double me al o
2-pm double me al and double poly ( h ough and hanks o
MOSIS).
Fi s
P o o ype:
The p ime objec i e o his i s p o o ype,
ab ica ed in he 3-pm double-me al p ocess, was o ob ain a
high enough oscilla ing equency
so
ha i could be consid-
e ed a adio equency. To ul ill his equi emen , an OTA
wi h a e y high ansconduc ance
g,
was needed. The OTA
o Fig. 4 was designed o his pu pose. No e ha he
a chi ec u e is a e y simple one. The eason is ha
i
can
p o ide la ge uning anges han linea ized OTAs. On he
o he hand, since his OTA is going o be biased by a e y
la ge ail cu en (up
o
almos
10
mA),
he e is no need o
a linea iza ion scheme. Table
I1
shows he basic dc pa ame-
e s o his OTA as a unc ion o he bias ol age. The
IEEE JOURNAL
OF
SOLID-STATE CIRCUITS, VOL.
26,
NO.
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FEBRUARY 1991
163
Ro
2.77
kR
3.00
kR
3.78
kR
6.85
kR
9.47
kn
13.82
kR
18.91
kR
48.50
kR
101.00
kR
10-3
10-4
10-~
10-6
gm
2.49 mmhos
2.38 mmhos
2.12 mmhos
1.90 mmhos
1.76 mmhos
1.61 mmhos
1.43 mmhos
0.932 mmhos
0.638 mmhos
'
(
Hz)
10-3
10-4
10-~
10-6
TABLE
I1
EXPERIMENTAL CHARACTERIZATION
OF
OTA
I/bias
-
2.72
-
2.98
-
3.19
-
3.40
-
3.51
-
3.61
-
3.68
-
3.80
-
3.88
Ib
9.65
mA
9.60
mA
9.30
mA
6.10
mA
4.20
mA
2.70
mA
1.75
mA
780
pA
490 pA
TABLE
111
EXPERIMENTAL CHARACTERIZATION
OF
OSCILLATOR
F equency
OTAl OTA2 OTA4
-2.9 V
-3.19V
-
3.40 V
-3.51 V
-3.61 V
-
3.68 V
-
3.80 V
-
3.88 V
-
3.96 V
-
3.98 V
-
3.39
56.1 MHz
-
3.35
55.5 MHz
50.5 MHz
-
3.35
-
3.37
46.1 MHz
40.9 MHz
-3.41 V
-3.51 V 38.2 MHz
31.3 MHz
24.3 MHz
12.4 MHz
12.0 MHz
-
3.66 V
-
3.80 V
-
3.84 V
-
3.86 V
105 106
107
ld
109 (Hz)
Red F equency
(b)
Fig. 3. Tuning
o
he
g,'s
o
he
VCO
ope a ion
using
he 40TA2C:
(a)
wi hou pa asi ics, and
(b)
wi h pa asi ics.
I I
Fig. 4.
A
3-pm CMOS OTA.
oscilla o s uc u e buil was a quad a u e oscilla o (see Fig.
2(d)), in which he OTA o ansconduc ance
g,,
was sup-
p essed acco ding o he p edis o ion echnique ha esul s
om he OTA pa asi ic's in luence, as is shown in Fig. 3(b).
Ex e nal limi e s we e included o con ol he ampli ude.
The equency o he oscilla o could be uned be ween 12.0
and 56.1 MHz. The dis o ion measu ed a 56.1 MHz was
2.5%.
In
Table
I11
he dependence o he oscilla ion e-
quency
on
he biasing (see
Vbia
in Fig. 4) o he OTA's is
shown. Acco ding o he pa asi ics' in luence, he ela ion
be ween oscilla ing equency
(R,
=
2a o), ansconduc-
ance
gmi
o he di e en OTA's, capaci o s
(Cl=C2
=
pa asi ic pole
wi
o
gmi)
is gi en o his oscilla o s uc u e
by 1101
(4)
gmlgm2
+
Go2(gm4
+
+
'04)
a;
=
To e i y he accu acy o his exp ession, le us ocus
on
Table
I11
o he case o 24.3 MHz o oscilla ing equency.
Fo his case,
g,,
=
g,,
=
0.64 mmhos, gm4
=
0.93 mmhos,
Go;'
=
Go;'
=
101
kR,
Goy1
=
48.5
kR,
C,
=
C,
=
5
pF, and
wl=
w2
=w4=
2a X75 MHz. Acco ding o (4) his would
yield a equency o
no
o
-
=
26 MHz
2a
(5)
which is e y close o he 24.3 MHz expe imen ally mea-
su ed.
Second P o o ype:
A second mic ochip was ab ica ed in
he 2-pm double-poly, double-me al p ocess in o de o es
he model oscilla o s uc u es p oposed in his pape . The
chip con ains he h ee oscilla o s 20TA3C, 40TA2C, and
4OTA4C. This ime a linea ized OTA was used, as p oposed
by Nedungadi and Geige [11]. The maximum bias cu en
o he di e en ial pai s age is less han 2 mA. To ob ain
la ge gm alues an addi ional cu en gain was added a he
ou pu cu en mi o s.
In
all hese cases, he ampli ude was
con olled by limi a ion, using he CMOS nonlinea esis o
o Fig.
5
[8], [lo]. The maximum equencies measu ed o
he 20TA3C, 40TA2C, and 40TA4C we e 45.5, 49.8, and
69.0 MHz, espec i ely. Fig. 6 illus a es he a ia ion o he
equency wi h he OTA bias ol age o each s uc u e.
Thi d P o o ype:
A hi d mic ochip was designed in o de
o e alua e he pe o mance o an OTA-C oscilla o wi h
AGC. A key componen o he success o such a con ol
loo^
is a Deak de ec o . The oscilla o will be made o
5
pF), and pa asi ics (ou pu impedances
GOi,
and dominan ope a e be ween 3 and 13 MHz, app oxima ely.
In
o de o
.,
164 IEEE JOURNAL
OF
SOLID-STATE CIRCUITS, VOL. 26, NO. 2, FEBRUARY 1991
TI
-
i
-
Fig.
5.
CMOS implemen a ion o he limi e .
4OTAZC
//,
2OTA3C
I
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8 1.9
2.0
35.
gm
("W
Fig.
6.
Oscilla ion equency e sus OTA ansconduc ances
o
2OTA3C, 40TA2C, and 40TA4C oscilla o s.
I
+5
Fig.
7.
CMOS peak de ec o .
ou pu
*
Peak
Dcl cb
Fig.
8.
40TA2C oscilla o wi h AGC.
he peak de ec o o co e his ange and ope a e well a
hese equencies a e y simple ci cui was chosen, as shown
in Fig.
7.
The pe o mance o his peak de ec o was mea-
su ed sepa a ely.
By
e uning he bias e minals
I/bias
and
Vdischa ge
(see Fig.
7),
he peak de ec o was able o ex ac a
1-MHz signal om a 40-MHz ca ie , a 250-kHz signal om
a 1-MHz ca ie , o a 300-Hz signal om a 10-kHz ca ie
[lo]. The oscilla o s uc u e used was a 4OTA2C, as shown
in Fig.
8.
The in eg a o and summe , added o he AGC
loop in o de o make i s able [lo], a e implemen ed using
OTA-C echniques. The ela ionship be ween he oscilla ion
equencies and he bias ol age o OTAl and OTA2 is
shown in Fig.
9
o di e en alues o he oscilla ion ampli-
ude.
~.-..
1.04
.
.
-3.9
-3.8
-3.7
-3.6
-3.5 -3.4
-3.3
-3.2
-3.1
-3.0
Bia
Vol age
(Vol s)
Fig.
9.
F equency e sus bias ol age o di e en
peak
ampli udes.
V.
CONCLUSIONS
A gene al app oach o he sys ema ic design o OTA-C
oscilla o s uc u es is p esen ed. Some no el oscilla o s a e
ob ained and ha e been ab ica ed
on
silicon. Oscilla ion
equencies o up o
69
MHz we e measu ed. A wide- ange
simple peak de ec o has been ab ica ed and included in an
AGC loop
o
one o he oscilla o s. The in luence o he
OTAs basic pa asi ics
is
discussed and e i ied in he ope a-

IEEE JOURNAL OF SOLID-STATE CIRCUITS,
VOL.
26,
NO.
2, FEBRUARY 1991 165
ion o he oscilla o s.
In
summa y, he o e all well-beha ed
pe o mance o OTA-C oscilla o s o high equencies has
been demons a ed.
REFERENCES
[l] F. K ummenache and
N.
Joel, “A 4 MHz CMOS con inuous-
ime il e wi h on-chip au oma ic uning,”
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Solid-s a e
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[2]
K.
D. Pe e son, A. Nedungadi, and R. L. Geige , “Ampli ie
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Sep .
[3] H. Ne B ez-Lozano, J. A. Hill, and
E.
SBnchez-Sinencio,
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H. Loh, D. Hise , W. Adams, and R. L. Geige , “A obus
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[5]
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2169-2172.
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171
181
191
1101
1111
[I21
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MA:
Addison Wesley, 1978.
A. Rod iguez-VBzquez,
B.
Lina es-Ba anco, J. L. Hue as, and
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198-211, Feb. 1990.
B. Lina es-Ba anco, A. Rod iguez-Vkzquez, E. SBnchez-
Sinencio, and J. L. Hue as,
“10
MHz
CMOS OTA-C ol age-
con olled quad a u e oscilla o ,”
Elec on. Le .,
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765-766, June 1989.
B. Lina es-Ba anco, A. Rod iguez-VBzquez, J. L. Hue as,
E. SBnchez-Sinencio, and J. J. Hoyle, “Gene a ion and design
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/
ISCAS
’88,
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3 (Espoo, Finland), June 1988,
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2863-2866.
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Lina es-Ba anco, “Design o high equency ansconduc-
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A. Nedungadi and R. L. Geige , “High- equency ol age con-
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E.
Allen and D. R. Holbe g,
CMOS
Analog Ci cui Design.
New Yo k: Hol , Reinha , Wins on, 1987.
Two
No el Fully Complemen a y Sel -Biased CMOS
Di e en ial Ampli ie s
Me1
Bazes
Abmuc --Two
no el CMOS di e en ial ampli ie s a e p esen ed.
Bo h di e om con en ional CMOS di e en ial ampli ie s in ha ing
ully complemen a y con igu a ions and in being sel -biased h ough
nega i e eedback. The ampli ie s ha e been applied as p ecision high-
speed compa a o s in comme cial
VLSI
CMOS in eg a ed ci cui s.
2)
he ampli ie s a e sel -biased h ough nega i e eed-
back.
These wo di e ences in he ampli ie con igu a ions esul
in se e al pe o mance enhancemen s:
I.
INTRODUCTION
HIS
b ie pape p esen s
wo
no el CMOS di e en ial
T
ampli ie s. The i s di e en ial ampli ie is in ended o
applica ions in which he inpu common-mode ange is ela-
i ely limi ed; his ampli ie is deno ed a complemen a y
sel -biased di e en ial ampli ie (CSDA)
[ll.
The second
di e en ial ampli ie is in ended o applica ions in which
he inpu common-mode ange is bounded only by he supply
ol ages; his ampli ie is deno ed a e y-wide-common-
mode- ange di e en ial ampli ie (VCDA)
[2].
The ci cui con igu a ions
o
bo h ampli ie s di e om
hose o con en ional CMOS di e en ial-ampli ie con igu-
a ions in
wo
impo an ways:
less sensi i i y
o
ac i e- egion biasing
o
a ia ions in
capabili y o supplying swi ching cu en s ha a e signi -
nominal doubling o di e en ial-mode gain
(
+
6
dB).
p ocessing, empe a u e, and supply;
ican ly g ea e han he quiescen bias cu en ;
These pe o mance enhancemen s a e pa icula ly desi able
in compa a o applica ions in comme cial digi al CMOS
VLSI
in eg a ed ci cui s, whe e p ecision, high speed, ease
o in e acing o o dina y logic ga es, and consis en ly high
p oduc ion yields a e equi ed. Bo h ampli ie s ha e ound
applica ion in comme cial CMOS
VLSI
in eg a ed ci cui s as
p ecision compa a o s, as will be discussed below.
1)
he ampli ie s a e comple ely complemen a y, i.e., each
n- ype de ice ope a es in push-pull ashion wi h a
co esponding p- ype de ice;
11.
CSDA
A.
Theo y
o
Ope a ion
A sel -biased, bu noncomplemen a y, CMOS di e en ial
ampli ie has been epo ed
[3],
as has a ully complemen-
a y, bu ex e nally biased, CMOS di e en ial ampli ie
[4].
Manusc ip ecei ed Ap il
11,
1990; e ised Sep embe
5,
1990.
The au ho is
wi h
In el Is ael,
L d.,
31015
Hai a, Is ael.
IEEE
Log
Numbe
9041476.
O018-9200/~1/0200-0165$01
.OO
0
1991
IEEE