www.ad ene gyma .de
1904196 (1 o 9) © 2020 WILEY-VCH Ve lag GmbH & Co. KGaA, Weinheim
Full PaPe
Ligh Ha es ing a Oblique Incidence Decoupled om
T ansmission in O ganic Sola Cells Exhibi ing 9.8%
E iciency and 50% Visible Ligh T anspa ency
Quan Liu, Luis G. Ge ling, F ancisco Be nal-Texca, Johann Toude , Teng ei Li,
Xiaowei Zhan,* and Jo di Ma o ell*
DOI: 10.1002/aenm.201904196
accep o s (NFAs) wi h an in a ed shi ed
abso p ion yielded imp essi e cell pe o -
mances o cells wi h di e en le els o
anspa ency.[5–19] Howe e , he ul ima e
ou e o ob ain a highly e icien ene gy
con e sion in highly anspa en cells
may de ia e signi ican ly om he one ol-
lowed o each he bes opaque sola cells,
which essen ially a ge s a maximiza ion
o he powe con e sion e iciency (PCE)
a no mal incidence. The inal a chi ec-
u e o an op imal anspa en sola cell
may be s ongly linked o whe e on he
plane ea h such anspa en ligh ha -
es ing de ice is loca ed, i s azimu h and
inclina ion, and also o he applica ion ha
may be gi en o such de ice in addi ion o
ene gy con e sion. Fo a e ically posi-
ioned semi anspa en ligh ha es ing
window, ision h ough he de ice should emain unal e ed
a angles ela i ely close o no mal incidence (≈0–50°) while
a la ge angles sunligh ha es ing should be maximized, as
shown schema ically in Figu e 1a.
2. Resul s and Discussion
2.1. T anspa en Cell A chi ec u e Design
A blend mixing a na ow bandgap dono polyme as PTB7-Th
and an NFA accep o as FOIC has been shown o e icien ly
u ilize nea in a ed (NIR) sola i adia ion making hem an
ideal ma e ial o conside semi anspa en cells.[9] Depa ing
om such blend, we in oduced PC71BM ulle ene accep o in
he p opo ion speci ied in he expe imen al sec ion o sligh ly
inc ease he de ice ill ac o (FF) and open-ci cui ol age (VOC)
wi hou any majo e ec in he sho -ci cui cu en o isible
ansmission. The inal ma e ial composi ion wi h an abso p-
ion band peaking a 820nm is he ideal one o use in semi-
anspa en cells p o ided such band may be op ically shi ed o
b oadened o each he ul ima e balance be ween ene gy con-
e sion and anspa ency.
Wi hou in oducing any u he changes in he blend nano-
mo phology, we conside ed he inco po a ion in o such o ganic
cell o a 1D nanopho onic s uc u e (1D-NPS) o e ec i ely
ha es sunligh when he cell is in a e ical posi ion. Such
Fo many yea s, i has been ecognized ha po en ial o ganic pho o ol aic
cells mus be in eg a ed in o elemen s equi ing high anspa ency. In mos
o such elemen s, sunligh is likely o be inciden a la ge angles. He e i is
demon s a ed ha ligh ansmission can be la gely decoupled om ha -
es ing by op ically ailo ing an in a ed shi ed non ulle ene accep o based
o ganic cell a chi ec u e. A 9.67% powe con e sion e iciency a 50° incidence
is achie ed oge he wi h an a e age isual ansmission abo e 50% a no mal
incidence. The decons uc ion o a 1D nanopho onic s uc u e is implemen ed
o conclude ha jus wo λ/4 hick laye s a e essen ial o each, o a wide
incidence angle ange, a highe han 50% e iciency inc ease ela i e o he
s anda d con igu a ion e e ence. In an ou doo measu emen o e ically
posi ioned 50% isible anspa en cells, i is demons a ed ha 9.80% o
sunligh ene gy can be con e ed in o elec ici y du ing he cou se o 1 day.
D . Q. Liu, D . L. G. Ge ling, F. Be nal-Texca, D . J. Toude ,
P o . J. Ma o ell
ICFO-Ins i u de Ciències Fo òniques
The Ba celona Ins i u e o Science and Technology
Cas ellde els, Ba celona 08860, Spain
E-mail: [email p o ec ed]
T. Li, P o . X. Zhan
Depa men o Ma e ials Science and Enginee ing
College o Enginee ing
Key Labo a o y o Polyme Chemis y and Physics o Minis y
o Educa ion
Peking Uni e si y
Beijing 100871, China
E-mail: [email p o ec ed]
P o . J. Ma o ell
Depa amen de Física
Uni e si a Poli ècnica de Ca alunya
Te assa 08222, Spain
The ORCID iden i ica ion numbe (s) o he au ho (s) o his a icle
can be ound unde h ps://doi.o g/10.1002/aenm.201904196.
1. In oduc ion
The abso p ion cha ac e is ics o he o ganic pho o ol aic
(OPV) ma e ials make hem ideal candida es o achie e is-
ibly anspa en de ices ha would be able o compe e wi h a
Si-based echnology in he con e sion o ligh o elec ici y.[1–4]
Recen ad ances in he syn hesis o no el non ulle ene
Ad . Ene gy Ma e . 2020, 10, 1904196
www.ad ene gyma .de
www.ad ancedsciencenews.com
© 2020 WILEY-VCH Ve lag GmbH & Co. KGaA, Weinheim
1904196 (2 o 9)
s uc u e, al e na ing low and high e ac i e index nano hick
laye s, is shown schema ically in Figu e 1b. To a oid in o-
ducing any ele an al e a ion o pa ame e s which, in he end,
will la gely de e mine he elec ical pe o mance o an o ganic
sola cell, we limi ed he s udy o 1D-NPSs inco po a ing dielec-
ic ma e ials ha can be deposi ed using mild condi ions in
high acuum e apo a ion.[20–26] To ind he op imal con igu a-
ion an o en used p ocedu e is based on an in e se design[27–31]
aking in o accoun all he speci ici ies o ligh ha es ing. In
addi ion o s anda d conside a ions such as he ligh sou ce,
he abso p ion wa eleng h dependence, and he human eye
esponse o ligh , we should inco po a e in he design a e ical
cell posi ioning, as well as an in ensi y and angula -dependen
i adia ion. As a consequence, he cell pe o mance canno be
solely e alua ed on PCE and ligh ansmission as i was done
in he pas ,[32,33] bu mus p ima ily conside he e iciency in
collec ing and con e ing ligh in o elec ici y, de ined as he
a io o he elec ical ene gy ob ained om he pho o ol aic
de ice in ela ion o he ecei ed sunligh ene gy du ing he
cou se o 1 day. Th oughou he ex we will use he ac onym
ECE which s ands o ene gy con e sion e iciency.
To compu e he op imal anspa en cell a chi ec u e, we used
he ans e ma ix ull wa e ec o me hod inco po a ing an
angula and in ensi y dependen sun i adia ion, and sough a
solu ion ollowing an in e se design app oach as desc ibed in Sec-
ion1 o he Suppo ing In o ma ion and e . [34]. In such com-
pu a ion, he sun i adia ion was es ima ed using equa ion S6
(Suppo ing In o ma ion). We also ook in o accoun ha ou -
doo ene gy ha es ing expe imen al measu emen s we e pe -
o med a pa allel ≈41° on sunny days du ing o close o he
sp ing equinox. The e ical inclina ion and azimu hal o ien a-
ion o he cell was inco po a ed in he compu a ion, oo. When
he a ge in he in e se design was a cell wi h an a e age isual
ansmission (AVT) a no mal incidence highe han 50% and
p o iding he maximum ECE a he end o he day, he op imal
cell a chi ec u e ound was one inco po a ing a i e-laye
1D-NPS behind a 9nm hick back Ag me al con ac . As seen
in Figu e 1c, inco po a ing such 1D-NPS inc eases he PCE
ela i e o he s anda d a chi ec u e anspa en cell by mo e
han 50% o almos he en i e ligh incidence angula ange.
Inc easing he numbe o laye s om 1 o 5 in he 1D-NPS
ends o inc ease he ex e nal quan um e iciency (EQE) in he
Ad . Ene gy Ma e . 2020, 10, 1904196
Figu e 1. Design o he 1D-NPS o an op imal ene gy con e sion in anspa en cells. a) T anspa en ligh ha es ing window. A pa allel 41° di ec
sunligh is ha es ed a angles anging om 25° o 90°. b) Schema ic cell a chi ec u e including a h ee-laye 1D-NPS. c) Powe con e sion e iciency
(PCE, le axis) as a unc ion o he ligh angle o incidence. The PCE inc ease o a i e-laye 1D-NPS ela i e o he s anda d a chi ec u e is shown in
he igh axis as a do ed line. d) Ex e nal quan um e iciency (EQE) a he angle whe e he PCE is maximum (le axis) wi h he co esponding ligh
ansmission a no mal incidence ( igh axis). All ou cells conside ed in c,d) sha e he basic a chi ec u e soda-lime glass subs a e/ITO (135nm)/
ZnO-SG (10nm)/AL/MoO3 (5nm)/Ag (9nm) whe e AL indica es he same PTB7-Th:FOIC:PC71BM ac i e laye blend.[29] The AL hickness is 50, 71, 85,
and 87 o he s anda d, one-, h ee-, and i e-laye 1D-NPS con igu a ions, espec i ely. The s anda d, one-, h ee-, and i e-laye 1D-NPS con igu a ions
a e capped wi h LiF (30nm), LiF (262nm), LiF (149nm)/MoO3 (78nm)/LiF (43nm), and LiF (152nm)/MoO3 (70nm)/LiF (137nm)/MoO3(95nm)/
LiF (60nm), espec i ely. All he 1D-NPS cells inco po a e a LiF (120nm) an i e lec ion coa ing on he opposi e side o he subs a es.
www.ad ene gyma .dewww.ad ancedsciencenews.com
© 2020 WILEY-VCH Ve lag GmbH & Co. KGaA, Weinheim
1904196 (3 o 9)
NIR ange as well as b oaden such EQE owa d he isible pa
o he spec um, as can be seen in Figu e1d. This b oadening
would no imply any educ ion in he pe o mance o he cell as
a anspa en de ice p o ided ligh ha es ing is la gely decou-
pled om isible ansmission a no mal incidence as can be
seen in Figu e1d.
A i s sigh , inspec ion o he hicknesses in he i e-
laye 1D-NPS (gi en in he cap ion o Figu e 1) does no
show any appa en ela ionship among hem, which may
lead one o conclude ha a diso de ed 1D-NPS is needed o
an op imal cell pe o mance. In wha ollows we decons uc
such in e se design o b ing new insigh in o he op ical
ailo ing b ough by he 1D-NPS. In p inciple, such in e se
design should lead o a laye ed s uc u e enhancing e lec-
i i y a he NIR wi h wa eleng hs anging app oxima ely
om 600 o 900nm. Wha is somehow su p ising is ha he
phase shi
22
cos
π
λ
θπ
+nd
(1)
in oduced o a e lec ed wa e p opaga ing a an angle θ ela i e
o he no mal by any gi en laye o hickness d and e ac i e
index n, is 2π (see Figu e S3 in he Suppo ing In o ma ion),
only o he i s wo and ou laye s in he h ee- and i e-
laye 1D-NPS, espec i ely. In ac , he la ges con ibu ion o
he 50% enhancemen in he EQE is p o ided by he i s wo
laye s adjacen o he back me al con ac in bo h s uc u es. A
no mal incidence (Figu e S3a, Suppo ing In o ma ion), bo h
such laye s co espond o a λ/4 hickness bu sepa a ed by
abou 200nm. Fo he i e-laye 1D-NPS he hicknesses o he
hi d and ou h laye s a e also λ/4 bu a wa eleng hs signi i-
can ly di e en om he ones co esponding o he i s and
second laye s. These la e laye s p o ide a ine op ical uning,
sligh ly inc easing ene gy collec ion in he UV and NIR pa o
he spec um and a all angles as seen in Figu e1d,c espec-
i ely. A 50° incidence (Figu e S3b, Suppo ing In o ma ion),
he sepa a ion among he ou di e en wa eleng hs ends
o na ow down. In bo h s uc u es, he las laye is a e y
hin laye wi h almos he sole pu pose o educe he e ac-
i e index misma ch wi h ai . As o he one-laye 1D-NPS,
he hickness is λ/2 ins ead because o an addi ional π phase
shi a he 1D-NPS back in e ace whe e he index changes
om high o low. The e is a clea EQE sha pening in he 600
o 900nm ange when changing om a one- o a h ee-laye
1D-NPS, as a esul o a pa ial cohe en supe posi ion o he
e lec i i y p o ided by one addi ional in e ace in he h ee-
laye case. Howe e , such sha pening is signi ican ly lowe
when any addi ional λ/4 laye is inco po a ed. In summa y,
only wo o such λ/4 laye s a di e en wa eleng hs a e essen-
ially needed. This is in sha p con as o a B agg e lec ion
ha would include many o such laye s esona ing a a single
wa eleng h. The ac ha only wo laye s a e s ic ly needed
also con as s wi h diso de ed con igu a ions conside ed in he
pas whe e a la ge numbe o dielec ic laye s we e used. I is
also wo h no icing ha he small numbe o λ/4 laye s needed
o achie e an op imal pe o mance make he inal 1D-NPS
design la gely insensi i e o he speci ic condi ions ini ially
se as, o ins ance, he cell o ien a ion ela i e o he inciden
sun ays. In o he wo ds, he 1D-NPS is essen ial o e icien ly
cap u e ligh a la ge angles. Howe e , he inal a chi ec u e
ob ained designing he 1D-NPS when conside ing ligh a
no mal incidence would exhibi mino di e ences ela i e o
he one ob ained when conside ing ligh inciden wi h a b oad
angula ange.
2.2. Implemen a ion o 1D-NPS Cells
The la ges ECE wi h an AVT abo e 50% can be eached by
implemen ing he i e-laye 1D-NPS conside ed abo e. This
equi es he ab ica ion o a semi anspa en Ag elec ode on
op o he cell s uc u e wi h a hickness o 9nm. Such hick-
ness is below he s anda d one o such ype o op elec odes
which is ypically abo e 10nm.[7,9,35,36] To imp o e he we ing o
sil e on op o he MoO3 hole anspo ing laye while a oiding
he o ma ion o island-like clus e s ha lead o a me al hin
ilm wi h low ansmission and low conduc i i y,[37,38] we depos-
i ed an ul a hin Au seed laye (≈1nm) p io o he Ag e apo-
a ion on a cold subs a e.[39–41] Fu he de ails on he no el
p ocedu e we implemen ed o ob ain semi anspa en Ag op
elec odes as hin as 8nm (see scanning elec on mic oscope
images in Figu e S4, Suppo ing In o ma ion), can be ound in
Expe imen al sec ion. To ensu e a minimum educ ion in he
de ice FF compa ed o opaque elec odes, he Ag hickness in
anspa en cells should be abo e 9nm (Figu e S5, Suppo ing
In o ma ion). A e he op elec ode deposi ion, he 1D-NPS
was ab ica ed by he al e na ed high acuum e apo a ion
o LiF and MoO3 laye s. As indica ed in he p e ious sec ion,
hese ma e ials we e chosen because he deposi ion condi ions
a e mild enough o no lead o a signi ican educ ion in he
de ice elec ical p ope ies. De ails on he deposi ion p ocedu e
ollowed can be ound in he Expe imen al sec ion, oo.
To con i m he capaci y o he i e-laye 1D-NPS cell o e ec-
i ely ha es ligh a la ge incidence angles, we measu ed he
EQE o such cells a 0° and 50°, as shown in Figu e 2a. No e
ha he NIR band o he EQE b oadens owa d he blue pa o
he spec um by mo e han 55nm when he cell is o a ed by
50° wi h espec o ligh incidence. As can be seen in Figu e2b,
his is co esponded wi h an inc ease in he PCE, which a 50°
eaches a maximum alue o 9.67% compa ed o he maximum
eached a no mal incidence which was 8.66% as indica ed in
Table 1. In con as , he EQE as well as he cu en densi y–
ol age (J–V) cu es o a s anda d con igu a ion anspa en
o ganic sola do no exhibi any signi ican change when ligh
incidence changes om 0° o 50°. No e ha he s anda d con ig-
u a ion cell we used as a e e ence de ice exhibi s a pe o mance
which is be e han pe o mances epo ed in he ecen li e a-
u e ha conside ed o ganic cells wi h a 50% anspa ency o
abo e (see Table S1, Suppo ing In o ma ion). In addi ion, when
he ligh ha es ing capaci y is weigh ed wi h he AVT (PCE∙AVT
p oduc ), he cells including he i e-laye 1D-NPS almos double
he pe o mance o such e e ence cells (Figu e S7, Suppo ing
In o ma ion). When compa ing i o he mos ecen epo on
50% anspa ency OPV cells, such ela i e gain becomes la ge
han 100% (g een a ow in Figu e S7, Suppo ing In o ma ion).
Al hough o bo h he i e-laye 1-D NPS and s anda d cells he
AVT is sligh ly abo e 50%, i is clea by inspec ion o Figu e2c
Ad . Ene gy Ma e . 2020, 10, 1904196
www.ad ene gyma .de
www.ad ancedsciencenews.com
© 2020 WILEY-VCH Ve lag GmbH & Co. KGaA, Weinheim
1904196 (4 o 9)
Ad . Ene gy Ma e . 2020, 10, 1904196
Table 1. Pho o ol aic pa ame e s o he ab ica ed sola cells unde AM1.5G 1-sun sola illumina ion.
De ice AL
hickness
LiF/MoO3/LiF/
MoO3/LiF [nm]
Angle o
incidence
JSC(JEQE)a)
[mA cm−2]
VOC
[V]
FF
[%]
PCEb)
[%]
AVTc)
[%]
S anda d 50 nm 30/0/0/0/0 θ= 0°11.34±0.15 (11.30) 0.744±0.002 68.1±1.0 5.75±0.07 (5.82) 50.92
θ= 50°11.75±0.21 (11.69) 0.744±0.002 68.2±1.1 6.02±0.08 (6.11)
Fi e-laye 1D-NPS 86 nm 150/70/132/97/56 θ= 0°16.69±0.22 (16.64) 0.746±0.003 66.8±0.8 8.32±0.18 (8.66) 50.04
θ= 50°18.73±0.26 (18.54) 0.751±0.002 66.8±0.7 9.40±0.16 (9.67)
Th ee-laye 1D-NPS (neu al colo ) 72 nm 140/98/40/0/0 θ= 0°14.72±0.17 (14.62) 0.749±0.002 66.7±1.1 7.36±0.16 (7.56) 51.09
θ= 50°16.43±0.25 (15.98) 0.744±0.003 66.8±1.0 8.16±0.12 (8.34)
Opaque (op imal) 105 nm — θ= 0°23.83±0.33 (23.10) 0.753±0.005 66.5±1.3 11.95±0.28 (12.32) 0
a)Calcula ed om expe imen al EQE spec a; b)The a e age alues and s anda d de ia ions a e ob ained om o e 15 de ices and he bes PCE alues a e shown in pa en-
heses; c)AVT is calcula ed om
TI
()V( )(
)
∫
λλλ
dλ/
VI
()
()
∫
λλ
dλ, whe e T(λ) is expe imen al ansmission, V(λ) is pho opic cu e, and I(λ) is he AM1.5G spec um (see
Sec ion S4, Suppo ing In o ma ion).
Figu e 2. Cell con e sion e iciency and anspa ency. a) Expe imen al (ci cles) and simula ed (lines) EQEs o he s anda d (da k ed) and i e-laye
1D-NPS (blue) cells a no mal (emp y ci cles and do ed lines) and a 50° (solid ci cles and solid lines) incidence. b) Measu ed J–V cha ac e is ics o
he s anda d (da k ed), i e-laye 1D-NPS (blue) and h ee-laye 1D-NPS (g een) cells a no mal (emp y ci cles) and 50° (solid ci cles) incidence unde
AM1.5G 1-sun illumina ion. c) Expe imen al (emp y ci cles) and simula ed (solid lines) ligh ansmission spec a a no mal incidence (le axis) o he
s anda d (da k ed), i e-laye 1D-NPS (blue) and h ee-laye 1D-NPS (g een) cells. The no malized S (blue hin line), M (g een hin line), L ( ed hin
line) cone sensi i i ies and pho opic cu es (black hin line) a e also depic ed in he igh axis. d) Expe imen al (solid) and simula ed (do ed) TM
( ed) and TE (blue) ligh ansmissions a 50° and no mal (black) incidence o he i e-laye 1D-NPS cell. All cells conside ed in a–d) sha e he basic
a chi ec u e soda-lime glass subs a e/ITO (135nm)/ZnO-SG (10nm)/AL/MoO3 (5nm)/Ag (9nm), whe e AL is he same PTB7-Th:FOIC:PC71BM ac i e
laye blend wi h a hickness o 50, 72, and 86nm o he s anda d, h ee-, and i e-laye 1D-NPS con igu a ions, espec i ely. The s anda d, h ee-, and
i e-laye 1D-NPS con igu a ions a e capped wi h LiF (30nm), LiF (140nm)/MoO3 (98nm)/LiF (40nm) and LiF (150nm)/MoO3 (70nm)/LiF (132nm)/
MoO3 (97nm)/LiF (56nm), espec i ely. All 1D-NPS cells inco po a e a LiF (120nm) an i e lec ion coa ing on he opposi e side o he subs a e. No e
ha he h ee-laye 1D-NPS cell was op imized o a neu al colo ansmission as opposed o he one conside ed in Figu e1, which was op imized o
an AVT la ge han 50% only. The di e ences be ween he i e-laye 1-D NPS om he cu en igu e and he one om Figu e1 mus be a ibu ed o
expe imen al limi a ions in exac ly ep oducing laye hicknesses.
www.ad ene gyma .dewww.ad ancedsciencenews.com
© 2020 WILEY-VCH Ve lag GmbH & Co. KGaA, Weinheim
1904196 (5 o 9)
ha he s anda d con igu a ion cell would p o ide a close o a
neu al colo ansmission gi en ha ansmission in he blue
as well as he ed po ions o he spec um is less a ec ed by
such sola cell. To achie e a high e iciency neu al colo ans-
mission sola cell, we inco po a ed in he in e se design he
condi ion ha , in addi ion o an AVT abo e 50%, he a e age
ansmission o he blue, ed, and g een cone sensi i i ies
o be abo e 50%, oo (see Figu e S8 in he Suppo ing In o -
ma ion). In ha case, he in e se design yielded a h ee-laye
1D-NPS cell ha when ab ica ed exhibi ed a maximum PCE o
8.34%, mo e han 2 pe cen age poin s highe han he PCE o
he bes s anda d con igu a ion cell (see J–V cu e in Figu e2b
and EQE cu e in Figu e S9 in he Suppo ing In o ma ion).
On he o he hand, as can be seen in Figu e2c and Figu e S10
(Suppo ing In o ma ion), he ansmission p o ile achie ed o
he h ee-laye 1D-NPS cell is e y simila o he one om he
s anda d con igu a ion.
In an angula dependen op imiza ion o an o ganic sola
cell, one may ha e o conside addi ional adjus men s o accoun
o a possible bi e ingence due o a p e e ed o ien a ion o
he polyme o molecules wi hin he ac i e laye .[42] To e alua e
po en ial de ia ions in he e ac i e index, we measu ed he
ans e se magne ic (TM) and ans e se elec ic (TE) ansmis-
sions a 50° sepa a ely. When i ing such measu ed ansmis-
sion spec a o he p edic ions om ou ans e ma ix model,
shown bo h in Figu e2d, we obse e a small IR shi o he p e-
dic ed ansmission ela i e o he measu ed one. Howe e , his
shi is p esen o bo h pola iza ions as well as o he no mal
incidence ansmission. In such e en , he small de ia ion
obse ed should be a ibu ed o a small e o when de e mining
each laye hickness o e ac i e index. Al hough we canno ully
disca d i , i p esen , bi e ingence would be small enough no
o in oduce any signi ican change in he design o he 1D-NPS
o ob ain an op imal pe o mance o he anspa en sola cells.
2.3. E iciency in Ene gy Collec ion When Sunligh Is Inciden
a La ge Angles
As can be in e ed om Figu es 1c and 2a,b, he PCE o a
i e-laye 1D-NPS cell exhibi s a s ong dependence on he
ligh angle o incidence. Indeed, i we compa e he measu ed
a e age PCEs om Table 1 we no e ha such a e age PCE
inc eases by 13% when he cell is il ed om 0° o 50°. As seen
Ad . Ene gy Ma e . 2020, 10, 1904196
Figu e 3. Ou doo measu emen s o ene gy con e sion du ing he equinox. a) Expe imen al (ci cles) and modeled (lines) sun i adiance (le axis) and
sun ays angle o incidence ( igh axis) on a e ical cell acing sou h o wo di e en days: Ma ch 21 2019 (solid ci cles, solid lines) and Ma ch 25 2019
(emp y ci cles, dashed lines). The angle o sun ays’ incidence is gi en ela i e o he no mal o he cell su ace. The i e-laye 1D-NPS and mc-Si module
we e measu ed on Ma ch 21 and he s anda d cell on Ma ch 25. The a ea unde he cu es co esponds o he o al sun adia ion used o de e mine
he ECE. b) Accumula ed elec ic ene gy (kWh m−2) o he s anda d and i e-laye 1D-NPS cells and he mc-Si module. c) PCE o he ab ica ed cells
and mc-Si module du ing he cou se o he day, using he modeled i adiance om a) as he inpu powe . d) Expe imen al VOC⋅FF p oduc (le axis)
and JcSC ela i e o he cell a ea ( igh axis). All measu emen s we e pe o med in a sou h-o ien ed e ical posi ion du ing clea sky days. Cell alues
ep esen a 16-de ice a e age while mc-Si module a e single measu emen s (see Tables S2, S3, and S4 o he Suppo ing In o ma ion o lis ed da a).
Solid o dashed lines a e model p edic ions whe eas do ed lines a e guides o he eye.

www.ad ene gyma .de
www.ad ancedsciencenews.com
© 2020 WILEY-VCH Ve lag GmbH & Co. KGaA, Weinheim
1904196 (6 o 9)
in Figu e1c, PCE ends o maximize close o he B ews e angle
and app oaches 0° a 90°. As indica ed abo e o an op imal cell
a chi ec u e, he in e se design mus be se o maximize ECE
du ing he cou se o 1 day a he han PCE a a gi en angle.
This should p ope ly accoun o PCE as well as inciden in en-
si y dependence on he angle o incidence o local sola ime.
As seen in Figu e 3a, du ing o close o he equinox o any
la de ice posi ioned e ically and acing sou h, he angle o
incidence o sun ays will ange om 48° o 90°, while sun-
ligh in ensi y will ange om 0 o a ound 800 W m−2. We ha e
chosen o pe o m ou doo measu emen s du ing o close o
he equinox because hey p o ide a good a e age o e yea a i-
a ions in sun ays in ensi y and al i ude.
The elec ic ene gy accumula ed du ing a day (in kWh m−2) as
well as he ene gy con e sion e iciency ( ollowing Equa ion S13,
Suppo ing In o ma ion) is de e mined pe squa e me e o
ins alla ion o ela i e o he cell a ea. As shown in Figu e 3b
and Table 2, he i e-laye 1D-NPS can collec ene gy wi h
an a e age e iciency o 9.51%, which is sligh ly la ge han
9.40%, i s PCE a 50° incidence. As can be seen by inspec ion
o Figu e3c, a simila ela ion be ween PCE and ECE is ound
o he mul i-c ys alline silicon (mc-Si) module inco po a ing
a ligh di usion ex u ing. On he con a y, he s anda d
con igu a ion anspa en OPV cell exhibi s an a e age 5.26%
ECE, a 13% less ela i e o 6.02%, i s PCE a 50° incidence. In
he in e se design o op ically ailo he 1D-NPS cell a chi ec-
u e, he compu ed and measu ed cu en densi ies (shown in
Figu e3d) a e ela i e o he ac ual cell a ea o accoun o he
educ ion in he o al numbe o collec ed pho ons by he cosα
ac o .[43–45] In addi ion, one may also in oduce he FF∙VOC
p oduc a ia ions due o changes in sunligh in ensi y du ing
he cou se o 1 day, shown in Figu e3d. When he la e and
all o he ligh dependen e ec s a e aken in o accoun , he
in e se design yields a cell a chi ec u e o he mos e icien
ene gy con e sion. As can be seen in Figu e 3c, he PCE o
he 1D-NPS cell is o a wide hou ly ange ai ly cons an ,
exhibi ing a sligh inc ease a ound 8 and 16 h and a clea d op
du ing e y ea ly o la e hou s.
3. Conclusion
The op ical ailo ing b ough by he 1D-NPS is shown o p o-
ide an op imal sunligh collec ion a la ge angles o ≈50°
and abo e. Fo a b oad ange o angles (≈20–80°) he capaci y
o a highly anspa en cell o con e ligh in o elec ici y is
inc eased by mo e han 50% ela i e o a anspa en de ice
in a s anda d con igu a ion no including any kind o speci ic
a chi ec u e o decouple ligh ha es ing om ansmission.
When conside ing a e ical ins alla ion, we demons a ed ha
he PCE as well as he ECE du ing he equinox a e bo h la ge
han 9.5%. These e iciencies a e he highes e e measu ed
o any kind o PV echnology exhibi ing an AVT la ge han
50%. The e icien u iliza ion o IR adia ion by he blend, he
small numbe o λ/4 laye s uned a di e en wa eleng hs used
in he op ical ailo ing, he ene gy ha es ing decoupled om
ansmission, he enhanced ha es ing a la ge angles o inci-
dence, and he ex emely hin me allic op elec ode ab ica ed,
all align oge he in he same di ec ion o lead o an inc ease
in ligh o elec ici y con e sion la ge han 50%, as seen in
Table 3, whe e h ee di e en me ics o e alua e a semi ans-
pa en cell a e compa ed.
I is wo h no ing ha e ical sunligh collec ion measu e-
men s o he ECE pe o med du ing he equinox p o ide a
good a e age o he de ice pe o mance h oughou he yea .
A pa allel 41° du ing he sp ing and all equinoxes, sun ays
will be inciden on he cell a angles ha ange om 48° o 90°.
The angula ange is om 25° o 60° du ing he win e sols ice
and om 72° o 90° du ing he summe sols ice. In addi ion,
p o ided ha di used sunligh is mos ly i adia ed om he
Ad . Ene gy Ma e . 2020, 10, 1904196
Table 2. Ene gy collec ion o he s anda d and he i e-laye 1D-NPS sola cells and he e e ence mc-Si module du ing he sp ing equinox (cells we e
posi ioned e ically and acing sou h).
De ice Accumula ed elec ic ene gy (E) [kWh m−2 d] Sola adia ion (Esun) [kWh m−2 d] Ene gy con e sion e iciency (ECE) [%]
S anda da,b) 0.268±0.010 (0.276) 5.092 5.26±0.20 (5.42)
Fi e-laye 1D-NPSa) 0.554±0.011 (0.570) 5.825 9.51±0.19 (9.80)
mc-Si 0.723 5.825 12.42
a)The a e age alues and s anda d de ia ions a e ob ained om 16 de ices and he highes alues a e shown in pa en heses; b)Measu ed on a di e en day (4 days a e
he equinox).
Table 3. Pe o mance o he 1D-NPS anspa en cell compa ed.
PCE [%] PCE∙AVT [%] ECE [%]
S anda d 0°S anda d 50°S anda d 0°S anda d 50°mc-Si (100% a ea) mc-Si (50% a ea) S anda d
5.82 6.11 2.99 3.14 12.42 6.21 5.42
1D-NPS
0°8.66 4.33
50°9.67 4.83
All angles 9.80 9.80 9.80
Gain (%) 49 58 45 54 −21 58 81
www.ad ene gyma .dewww.ad ancedsciencenews.com
© 2020 WILEY-VCH Ve lag GmbH & Co. KGaA, Weinheim
1904196 (7 o 9)
ci cumsola egion, as shown in Figu e S14, Sec ion S6 (Sup-
po ing In o ma ion), one should no expec any signi ican
d op in cell pe o mance when such pe o mance is a e aged
aking in o accoun all possible wea he and sky condi ions as
well as di e en sun al i udes and i adiances h oughou he
yea .
I is in e es ing o es ablish a compa ison o he 1D-NPS
cells wi h comme cial mc-Si modules. The nominal PCE o
such modules is, in he newe models, close o 17%, abou 2
pe cen age poin s highe han he olde mc-Si module we used
as a e e ence o e alua e con e sion o elec ical ene gy du ing
he cou se o a day (Figu e 3b,c). In no mal ope a ing condi-
ions, his e iciency would d op o 15%, exhibi ing a loss o
2 pe cen age poin s, simila o he loss we measu ed o he
mc-Si module we es ed. When conside ing a e ical Si ins al-
la ion co e ing 50% o a açade, in o he wo ds, in a chess-
boa d like building in eg a ed pho o ol aic (BIPV) ins alla ion
ha would p o ide a 50% obs uc ion o ligh pass, he ene gy
collec ion e iciency would d op o 7.5%. On he o he hand,
assuming 10% losses in an e en ual up-scaling o modules o
he neu al colo anspa en OPV cells we ab ica ed, such
OPV echnology inco po a ing a h ee-laye 1D-NPS would
exhibi app oxima ely 7.5% PCE o ECE. In summa y, we can
say ha he op ically ailo ed anspa en OPV echnology ha
we de eloped has he po en ial o clea ly ou pe o m comme -
cial Si modules o e ical açade BIPV ins alla ions. I would
p o ide a simila ligh o elec ici y con e sion bu wi h a high
quali y 50% anspa ency a no mal incidence wi hou any
highly isible obs uc ion o ision o d as ic change in colo .
Away om no mal incidence and up o 50°, changes in ans-
mission a e mino as can be seen in Figu e S10 (Suppo ing
In o ma ion) whe e he ansmission o a h ee-laye 1D-NPS
was measu ed a angles anging om 0° o 50°. In addi ion,
gi en ha he human eye esponse o changes in ligh in en-
si y is loga i hmic, he 50% educ ion in anspa ency o he
OPV de ice co esponds o a loss in b igh ness pe cep ion o
only 20%[46,47] (see Sec ion S4, Suppo ing In o ma ion). Such
loss in b igh ness is simila o he one ob ained om echnical
glasses, which a e widely used in anspa en building açades.
Simila ly, o he ch oma ic a ibu es[48] o he anspa en OPV
de ices (Table S5 and Figu e S16, Suppo ing In o ma ion)
indica e ha colo neu ali y and de ice pe o mance can be
a ained simul aneously. Finally, one mus no e ha no signi i-
can cell deg ada ion is obse ed when he encapsula ed cells
a e kep in ambien condi ions in he da k. Howe e , u u e
wo k should add ess cell pe o mance e olu ion unde illumi-
na ion which, due o he p esence o he NFA, seems o de ia e
signi ican ly om he e olu ion obse ed in highly s able
ulle ene accep o based cells.[49,50]
Rega ding po en ial applica ions o an ene gy collec ion
echnology mo e e icien when ligh is inciden a la ge angles,
i is impo an o no e ha in many elemen s o s uc u es
whe e PV is likely o be in eg a ed in, sunligh would in ac
be inciden a such la ge angles o mos o he ime. Window
açades bu also elec ic ehicles a e wo e y ele an applica-
ions ha may bene i om anspa en pho o ol aics. Uses o
such echnology as well as he op ical ailo ing de eloped may
go beyond a simple ligh o elec ici y con e sion. An in e -
es ing applica ion may a ise in wo-pho on abso p ion a i icial
pho osyn hesis sys ems wi h a andem con igu a ion. In such
case, a anspa en echnology would allow o an op imal in e-
g a ion o such sys ems while he op ical ailo ing would lead o
a be e balance among he n- ype semiconduc o pho oanode
and sola cell cu en s. Bo h issues may igge a majo s ep
o wa d in sola uel p oduc ion esea ch.
4. Expe imen al Sec ion
T anspa en Cell Fab ica ion: Fi s , a ≈10 nm ZnO elec on-
anspo ing laye was deposi ed on a p ecleaned ITO subs a e om
a sol-gel p ecu so solu ion o zinc ace a e dehyd a e dissol ed in
2-me hoxye hanol (0.15 m).[51,52] A e he mally annealing a 150°C in
ai ( ela i e humidi y < 40%) o 20min, he ZnO-coa ed samples we e
ans e ed in o a ni ogen- illed glo ebox o spin-cas ing he PTB7-
Th:FOIC:PC71BM (1:0.75: 0.75 by weigh ) pho oac i e laye .[29] Te na y
blend solu ions we e deposi ed a di e en concen a ions and spinning
speeds o achie e he nume ically compu ed ac i e laye hicknesses,
i.e., AL hickness o ≈50, ≈70, and ≈86nm we e achie ed wi h 15, 17.5,
and 20mg mL−1 solu ions ( o al concen a ion), espec i ely. A e wa ds,
he esul ing blend ilms we e d ied unde acuum (<5 × 10−6 mba ) o
1 h. Finally, a 5nm hick MoO3 laye (Al a Aesa , 0.5 Å s−1) ollowed by
an ul a hin Au seed laye (0.4 Å s−1, ≈1nm) and a hin Ag op elec ode
(3 Å s−1, 8–14nm) we e deposi ed sequen ially h ough a shadow mask
by he mal e apo a ion (<5 × 10−6 mba ). The de ice a ea, de ined by he
o e lap be ween ITO and op hin Ag elec odes, was 0.06 cm2. No e
ha he e apo a ion o he Au/Ag hin elec ode was ca ied ou on a
subs a e cooled down o −5°C in o de o dec ease su ace di usion
and island o ma ion o he Ag ilm. The op ical cons an o he hin
Ag ilms (Figu e S6a, Suppo ing In o ma ion) was accu a ely ex ac ed
h ough i ing expe imen al ligh ansmission, yielding an excellen
ag eemen wi h he expe imen al esul s (Figu e S6b, Suppo ing
In o ma ion). Fo s anda d cells, an addi ional p o ec ing laye o LiF
(0.5 Å s−1, 30nm) was deposi ed on op o he de ice a ea. Finally, o
ensu e good elec ical con ac , an addi ional 100nm hick Ag ilm was
deposi ed on op o he ou e edge o he hin Ag elec ode.
1D-NPS and ARC Deposi ion: The 1D-NPS we e ab ica ed by
sequen ial he mal e apo a ion o ela i ely low mel ing-poin MoO3
and LiF ino ganic ma e ials. To a oid in oducing physical damage o
elec ical deg ada ion o he cell unde nea h, and o gua an ee ba ch-
o-ba ch ep oducibili y, he deposi ion a es o bo h ma e ials need
o be well con olled a 0.5–0.6 Å s−1. The hicknesses o all 1D-NPS
laye s we e ca e ully moni o ed du ing he deposi ion using a c ys al
qua z balance, and we e la e con i med by i ing he measu ed
ansmission cu es wi h a ligh ansmission model. Fo he h ee-laye
and i e-laye 1D-NPS cells, an addi ional 120 nm LiF ARC laye was
he mally e apo a ed on he on side o he subs a es. All indoo cell
measu emen s we e pe o med in ambien ai wi hou encapsula ion,
whe eas all ou doo measu emen s we e done on glass-encapsula ed
de ices sealed wi h a UV cu able adhesi e (No land Op ical Adhesi e
73, 1.5min cu ing) be o e es ing. A pic u e o one o he encapsula ed
de ices used o he ou doo measu emen s is shown in Figu e S11a
(Suppo ing In o ma ion). No e ha a e encapsula ion, he i e-laye
1D-NPS cell exhibi s negligible changes in EQE, as seen in Figu e S12
(Suppo ing In o ma ion).
Cha ac e iza ion: The op ical simula ed ansmissions and EQEs a
no mal incidence and highe incidence angles we e pe o med using
an in-house compu e code based on he ans e ma ix me hod. The
equi ed op ical cons an s ( e ac i e index and ex inc ion coe icien )
o all ma e ials used in he de ices, shown in Figu e S17 (Suppo ing
In o ma ion), we e ob ained om modeling he expe imen al
ansmission o he hin ilms o a ious hicknesses, unless s a ed
o he wise. The J–V cu es o all de ices we e measu ed wi h a Kei hley
2420 sou ce me e unde a 1-sun, AM1.5G spec um om a sola
simula o (ABET Sol3A, 1000 W m−2). The illumina ion in ensi y o
he ligh sou ce (Xenon lamp, 300W, USHIO) was calib a ed using a
Ad . Ene gy Ma e . 2020, 10, 1904196
www.ad ene gyma .de
www.ad ancedsciencenews.com
© 2020 WILEY-VCH Ve lag GmbH & Co. KGaA, Weinheim
1904196 (8 o 9)
Ad . Ene gy Ma e . 2020, 10, 1904196
Hamama su silicon pho odiode (wi h a KG-5 il e , a ea = 0.1296 cm2)
ce i ica ed by ISE F aunho e . Spec ally esol ed EQE esponses we e
measu ed using a bench op equipmen (QEX10, PV Measu emen s
Inc) a 130 Hz, using a calib a ed silicon cell spec al esponse as
e e ence. Fo he J–V and EQE measu emen s a la ge incidence
angles, an in-house sample holde wi h unable il was employed. Fo
he EQE measu emen s, special ca e was aken o gua an ee ha he
ligh spo (3mm in leng h a 0°) was comple ely enclosed wi hin he
ac i e cell a ea. The ligh ansmission spec a o he ab ica ed de ices
we e eco ded using an UV–VIS–NIR spec opho ome e (Lambda950,
Pe kinElme ). Simila ly, he beam spo was comple ely con ined wi hin
he de ice a ea. TE and TM pola ized ligh ansmissions o i e-
laye 1D-NPS cell a no mal incidence and 50° we e eco ded by a
spec oscopic ellipsome e (Sop a, GES-5E). The shee esis ance o
op hin Ag elec odes was de e mined by a ou -poin p obe s a ion
(Cascade Mic o ech 44/7) connec ed o a Kei hley 2001 mul ime e .
The mo phological cha ac e is ics o hin-Ag ilms we e s udied by ield
emission scanning elec on mic oscopy (FEG-SEM, FEI Inspec F-EBL).
Di ec Sunligh Measu emen s: The ou doo moni o ing s a ion
was loca ed on ICFO’s oo (la i ude: 41.27°; longi ude: 1.989°), wi h a
e ical suppo o ien ed owa d sola sou h and ee o any shadows
and highly e lec i e su aces. The i adiance senso was a he mopile
py anome e (Apogee Ins umen s SP-500 Se ies) wi h a ce i ied
calib a ion unce ain y o ±5% (ISO-classi ied e e ence). The mc-Si
module (REC G oup) had a a ed peak powe o 20W and ≈0.135 m2
ac i e a ea, wi h a esis ance empe a u e de ec o (PT100) adhe ed
o he back panel. A pho og aph and a sys em schema ic is shown in
Figu e S11 (Suppo ing In o ma ion). The J–V cu es o he encapsula ed
es de ices and he mc-Si module we e measu ed wi h a Kei hley 2635A
sou ce me e (4-wi e p obing) a ¼–1 h in e als using a comme cial
da a logging so wa e (T ace IV, ReRa solu ions). Measu emen s we e
done du ing o nea he sp ing equinox (Ma ch 21), ensu ing cloudless
condi ions we e p esen ying o minimize he con ibu ion o di use
i adiance. A black su ace was used on he back o he cells o p e en
ea e lec ions. Because he cells we e only exposed o sunligh du ing
he ol age sweep in o de o a oid ligh deg ada ion and ensu e da a
consis ency, he possible e ec s o high ope a ing empe a u es a e
no conside ed, al hough i is gene ally accep ed ha PCE empe a u e
coe icien s in OPV a e posi i e, imp o ing he PCE alues sligh ly.[53,54]
Mo eo e , he PCE was measu ed unde a sola simula o be o e and
a e each ou doo un, showing no signs o deg ada ion (see Figu e S13,
Suppo ing In o ma ion).
Suppo ing In o ma ion
Suppo ing In o ma ion is a ailable om he Wiley Online Lib a y o
om he au ho .
Acknowledgemen s
Q.L., L.G., F.B., J.T., and J.M. acknowledge he inancial suppo om he
Spanish Minis y o Economy and Compe i i eness (MINECO) h ough
he “Se e o Ochoa” p og am o Cen es o Excellence in R&D (SEV-
2015-0522), om Fundació P i ada Cellex, om Gene ali a de Ca alunya
h ough he Impulsa-Lla o (Lla -00073) and CERCA p og ams, and also
acknowledge inancial suppo om MINECO h ough p ojec MAT2017-
89522-R. T.L. and X.Z. hank he NSFC (No. 21734001). F.B. also hanks
he CONACyT in e na ional g an s p og am.
Con lic o In e es
The au ho s decla e no con lic o in e es .
Keywo ds
1-D nanopho onic s uc u es, nea -in a ed e na y blends, oblique
incidence, op ical apping, anspa en sola cells
Recei ed: Decembe 21, 2019
Re ised: Feb ua y 6, 2020
Published online: Ma ch 13, 2020
[1] C. J.T a e se, R.Pandey, M. C.Ba , R. R.Lun , Na . Ene gy 2017,
2, 849.
[2] Q.Xue, R.Xia, C. J.B abec, H. L.Yip, Ene gy En i on. Sci. 2018, 11,
1688.
[3] S.Dai, X.Zhan, Ad . Ene gy Ma e . 2018, 8, 1800002.
[4] Y.Li, G.Xu, C.Cui, Y.Li, Ad . Ene gy Ma e . 2018, 8, 1701791.
[5] F. Liu, Z. Zhou, C. Zhang, J. Zhang, Q. Hu, T. Ve go e, F. Liu,
T. P.Russell, X.Zhu, Ad . Ma e . 2017, 29, 1606574.
[6] Y.Cui, C.Yang, H.Yao, J.Zhu, Y.Wang, G.Jia, F.Gao, J.Hou, Ad .
Ma e . 2017, 29, 1703080.
[7] W.Wang, C.Yan, T.-K.Lau, J.Wang, K.Liu, Y.Fan, X.Lu, X.Zhan,
Ad . Ma e . 2017, 29, 1701308.
[8] Y.Li, J.-D.Lin, X.Che, Y.Qu, F.Liu, L.-S.Liao, S. R.Fo es , J. Am.
Chem. Soc. 2017, 139, 17114.
[9] T.Li, S.Dai, Z.Ke, L.Yang, J.Wang, C.Yan, W.Ma, X.Zhan, Ad .
Ma e . 2018, 30, 1705969.
[10] S.Chen, H.Yao, B.Hu, G.Zhang, L.A unagi i, L.-K.Ma, J.Huang,
J.Zhang, Z.Zhu, F.Bai, W.Ma, H.Yan, Ad . Ene gy Ma e . 2018, 8,
1800529.
[11] B.Jia, S.Dai, Z.Ke, C.Yan, W.Ma, X.Zhan, Chem. Ma e . 2018, 30, 239.
[12] H. Huang, X. Li, L. Zhong, B. Qiu, Y. Yang, Z.-G. Zhang, Y. Li,
J. Ma e . Chem. A 2018, 6, 4670.
[13] J.Zhang, G.Xu, F.Tao, G.Zeng, M.Zhang, Y.Yang, Y.Li, Y.Li, Ad .
Ma e . 2019, 31, 1807159.
[14] J. Wang, J. Zhang, Y. Xiao, T. Xiao, R. Zhu, C. Yan, Y. Fu, G. Lu,
X.Lu, S. R.Ma de , X.Zhan, J. Am. Chem. Soc. 2018, 140, 9140.
[15] J. Zhu, Y. Xiao, J.Wang, K. Liu, H. Jiang, Y. Lin, X. Lu, X. Zhan,
Chem. Ma e . 2018, 30, 4150.
[16] M. B.Upama, M.W igh , N. K.Elumalai, M. A.Mahmud, D.Wang,
C.Xu, A.Uddin, ACS Pho onics 2017, 4, 2327.
[17] Y. Liu, P. Cheng, T. Li, R. Wang, Y. Li, S.-Y. Chang, Y. Zhu,
H.-W.Cheng, K.-H.Wei, X.Zhan, B.Sun, Y.Yang, ACS Nano 2019,
13, 1071.
[18] X.Ma, Z.Xiao, Q.An, M.Zhang, Z.Hu, J.Wang, L.Ding, F.Zhang,
J. Ma e . Chem. A 2018, 6, 21485.
[19] H.Shi, R.Xia, G.Zhang, H.-L.Yip, Y.Cao, Ad . Ene gy Ma e . 2019,
9, 1803438.
[20] W.Yu, L.Shen, P.Shen, Y.Long, H.Sun, W.Chen, S.Ruan, ACS
Appl. Ma e . In e aces 2014, 6, 599.
[21] W. Yu, S. Ruan, Y. Long, L. Shen, W. Guo, W. Chen, Sol. Ene gy
Ma e . Sol. Cells 2014, 127, 27.
[22] C. B onnbaue , J. Ho nich, N. Gaspa ini, F. Guo, B. Ha meie ,
N. A.Luechinge , C.P laum, C. J. B abec, K.Fo be ich, Ad . Op .
Ma e . 2015, 3, 1424.
[23] Y.Zhang, Z.Peng, C.Cai, Z.Liu, Y.Lin, W.Zheng, J.Yang, L.Hou,
Y.Cao, J. Ma e . Chem. A 2016, 4, 11821.
[24] P.Shen, M.Yao, J.Liu, Y.Long, W.Guo, L.Shen, J. Ma e . Chem. A
2019, 7, 4102.
[25] G.Xu, L.Shen, C.Cui, S.Wen, R.Xue, W.Chen, H.Chen, J.Zhang,
H.Li, Y.Li, Y.Li, Ad . Func . Ma e . 2017, 27, 1605908.
[26] J.Zhong, W.Liang, Y.Long, Op ik 2018, 171, 706.
[27] V.Ganapa i, O. D.Mille , E.Yablono i ch, IEEE J. Pho o ol aics 2014, 4, 175.
[28] S.Molesky, Z.Lin, A. Y.Piggo , W.Jin, J.Vucko ić, A. W.Rod iguez,
Na . Pho onics 2018, 12, 659.
www.ad ene gyma .dewww.ad ancedsciencenews.com
© 2020 WILEY-VCH Ve lag GmbH & Co. KGaA, Weinheim
1904196 (9 o 9)
Ad . Ene gy Ma e . 2020, 10, 1904196
[29] Q. Liu, J. Toude , T. Li, M. K ama enko, G. Ma ínez-Deneg i,
L.Ciamma uchi, X.Zhan, J.Ma o ell, Ad . Ene gy Ma e . 2019, 9,
1900463.
[30] R.Xia, C. J.B abec, H. L.Yip, Y.Cao, Joule 2019, 3, 2241.
[31] Y.Li, C.Ji, Y.Qu, X.Huang, S.Hou, C.-Z.Li, L.-S.Liao, L. J.Guo,
S. R.Fo es , Ad . Ma e . 2019, 31, 1903173.
[32] R. Be ancu , P. Rome o-Gomez, A. Ma inez-O e o, X. Elias,
M.Maymó, J.Ma o ell, Na . Pho onics 2013, 7, 995.
[33] F. Pas o elli, P. Rome o-Gomez, R. Be ancu , A. Ma inez-O e o,
P.Man illa-Pe ez, N.Bonod, J.Ma o ell, Ad . Ene gy Ma e . 2015,
5, 1400614.
[34] H.Zhang, M.K ama enko, J.Osmond, J.Toude , J.Ma o ell, ACS
Pho onics 2018, 5, 2243.
[35] C.-Y.Chang, L.Zuo, H.-L.Yip, Y.Li, C.-Z.Li, C.-S.Hsu, Y.-J.Cheng,
H.Chen, A. K.-Y.Jen, Ad . Func . Ma e . 2013, 23, 5084.
[36] H.Shi, R.Xia, C.Sun, J.Xiao, Z.Wu, F.Huang, H.-L.Yip, Y.Cao,
Ad . Ene gy Ma e . 2017, 7, 1701121.
[37] J.Yun, Ad . Func . Ma e . 2017, 27, 1606641.
[38] N. P.Se gean , A.Hadipou , B.Niesen, D.Cheyns, P.He emans,
P.Peumans, B. P.Rand, Ad . Ma e . 2012, 24, 728.
[39] S. Schube , J. Meiss, L. Mülle -Meskamp, K. Leo, Ad . Ene gy
Ma e . 2013, 3, 438.
[40] P. Rome o-Gomez, R. Be ancu , A. Ma inez-O e o, X. Elias,
M.Ma iano, B.Rome o, B.A edondo, R.Ve gaz, J.Ma o ell, Sol.
Ene gy Ma e . Sol. Cells 2015, 137, 44.
[41] T.S e aniuk, P.W óbel, E.Gó ecka, T.Szoplik, Nanoscale Res. Le .
2014, 9, 153.
[42] J.Be gq is , H.A win, O.Inganäs, ACS Pho onics 2018, 5, 3023.
[43] J. Mesche , A. Me ens, A. Egel, S. W. Ke li z, U. Lemme ,
A.Colsmann, AIP Ad . 2015, 5, 077188.
[44] D. Cheyns, B. P. Rand, B. Ve ee , J. Genoe, J. Poo mans,
P.He emans, Appl. Phys. Le . 2008, 92, 243310.
[45] G. Dennle , K. Fo be ich, M. C. Scha be , C. J. B abec, I. Tomiš,
K.Hinge l, T.F omhe z, J. Appl. Phys. 2007, 102, 054516.
[46] S. T.S e ens, Science 1961, 133, 80.
[47] B.Baue , Psychol. Reco d 2009, 59, 171.
[48] C. Yang, D. Liu, M. Ba es, M. C. Ba , R. R. Lun , Joule 2019,
3, 1803.
[49] Q.Liu, J.Toude , F.Liu, P.Man illa-Pe ez, M. M.Bajo, T. P.Russell,
J.Ma o ell, Ad . Ene gy Ma e . 2017, 7, 1701201.
[50] N. Y. Doumon, M. V. D yzho , F. V. Houa d, V. M. Le Co e,
A. R.Cha i, P.Ch is odoulis, L. J. A.Kos e , ACS Appl. Ma e . In e -
aces 2019, 11, 8310.
[51] Q. Liu, P. Rome o-Gomez, P. Man illa-Pe ez, S. Colod e o,
J.Toude , J.Ma o ell, Ad . Ene gy Ma e . 2017, 7, 1700356.
[52] Q. Liu, J. Toude , L. Ciamma uchi, G. Ma ínez-Deneg i,
J.Ma o ell, J. Ma e . Chem. A 2017, 5, 25476.
[53] N.B is ow, J.Ke le, J. Renewable Sus ainable Ene gy 2015, 7, 013111.
[54] I. Riedel, J. Pa isi, V. Dyakono , L. Lu sen, D. Vande zande,
J. C.Hummelen, Ad . Func . Ma e . 2004, 14, 38.