Ci a ion: Kumnge n, M.; Suksaibul,
P.; Kha eb, F.; Kulej, T. 1.2 V
Di e en ial Di e ence
T ansconduc ance Ampli ie and I s
Applica ion in Mixed-Mode
Uni e sal Fil e . Senso s 2022,22,
3535. h ps://doi.o g/10.3390/
s22093535
Academic Edi o s: Ha uo Kobayashi
and Al io Da io G asso
Recei ed: 8 Ma ch 2022
Accep ed: 4 May 2022
Published: 6 May 2022
Publishe ’s No e: MDPI s ays neu al
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published maps and ins i u ional a il-
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Copy igh : © 2022 by he au ho s.
Licensee MDPI, Basel, Swi ze land.
This a icle is an open access a icle
dis ibu ed unde he e ms and
condi ions o he C ea i e Commons
A ibu ion (CC BY) license (h ps://
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senso s
A icle
1.2 V Di e en ial Di e ence T ansconduc ance Ampli ie and
I s Applica ion in Mixed-Mode Uni e sal Fil e
Mon ee Kumnge n 1, Pichai Suksaibul 1, Fabian Kha eb 2,3,4,* and Tomasz Kulej 5
1Depa men o Telecommunica ions Enginee ing, School o Enginee ing, King Mongku ’s Ins i u e o
Technology Ladk abang, Bangkok 10520, Thailand; [email p o ec ed] (M.K.);
[email p o ec ed] (P.S.)
2Depa men o Mic oelec onics, B no Uni e si y o Technology, Technická10, 601 90 B no, Czech Republic
3Facul y o Biomedical Enginee ing, Czech Technical Uni e si y in P ague, nám. Sí ná3105,
272 01 Kladno, Czech Republic
4
Depa men o Elec ical Enginee ing, B no Uni e si y o De ence, Kounico a 65, 662 10 B no, Czech Republic
5Depa men o Elec ical Enginee ing, Czes ochowa Uni e si y o Technology, 42-201 Czes ochowa, Poland;
[email p o ec ed]
*Co espondence: kha eb@ u b .cz; Tel.: +420-54114-6128
Abs ac :
This pape p esen s a new mixed-mode uni e sal il e based on a di e en ial di e ence
ansconduc ance ampli ie (DDTA). Unlike he con en ional ansconduc ance ampli ie (TA), his
DDTA has bo h ad an ages o he TA and he di e en ial di e ence ampli ie (DDA). The p oposed
il e can o e ou -mode ope a ions o second-o de ans e unc ions in o a single opology, namely,
ol age-mode (VM), cu en -mode (CM), ansadmi ance-mode (TAM), and ansimpedance-mode
(TIM) ans e unc ions. Each ope a ion mode o e s i e s anda d il e ing esponses; he e o e,
a leas wen y il e ing ans e unc ions can be ob ained. Fo he il e ing ans e unc ions, he
ma ching condi ions o he inpu and passi e componen a e absen . The na u al equency and
he quali y ac o can be se o hogonally and elec onically con olled. The pe o mance o he
p oposed opology was e alua ed by PSPICE simula o using he 0.18
µ
m CMOS echnology om
he Taiwan Semiconduc o Manu ac u ing Company (TSMC). The ol age supply was 1.2 V and
he powe dissipa ion o he DDTA was 66
µ
W. The wo kabili y o he il e was con i med h ough
expe imen al es by DDTA-based LM13600 disc e e-componen in eg a ed ci cui s.
Keywo ds:
mixed-mode il e ; uni e sal il e ; di e en ial di e ence ansconduc ance ampli ie ;
analog signal p ocessing
1. In oduc ion
Uni e sal il e s a e basic elec onic blocks ha usually p o ide i e il e ing esponses
in o a single opology, namely, low-pass (LP), high pass (HP), band pass (BP), band s op
(BS), and all pass (AP) il e s. The applica ions such as h ee c osso e ne wo k high- ideli y
loudspeake s [
1
,
2
], ouch- one elephone one decode s [
2
], and high-o de il e s [
3
] equi e
uni e sal il e s as he basic building blocks. Mo eo e , uni e sal il e s can be ab ica ed
as comme cial p og ammable il e -in eg a ed ci cui s [
4
]. As a comme cially a ailable IC,
i is aluable i a single IC can p o ide a mul i-mode il e ha depends on he applica ions
o he ci cui designe . The e a e many uni e sal il e s a ailable in he open li e a u e, o
example, see [
5
–
14
]. Conside ing inpu and ou pu signals, hese uni e sal il e s can be
classi ied as ou -mode ope a ions as ollows: ol age-mode (VM) il e when bo h inpu
and ou pu signals a e in ol age o m [
5
,
6
]; cu en -mode (CM) il e when bo h inpu
and ou pu signals a e in cu en o m [7,8]; ansadmi ance-mode (TAM) il e when he
inpu signal is in ol age o m while he ou pu signal is in cu en o m [
9
–
11
], and inally
ansimpedance-mode (TIM) il e when he inpu signal is in cu en o m while he ou pu
signal is in ol age o m [
12
–
14
]. I should be no ed ha he uni e sal il e s in [
12
–
14
] o e
only a single-mode il e .
Senso s 2022,22, 3535. h ps://doi.o g/10.3390/s22093535 h ps://www.mdpi.com/jou nal/senso s
Senso s 2022,22, 3535 2 o 21
Recen ly, uni e sal il e s ha ope a e as mul i-mode il e s in o a single opology,
he so-called mixed-mode uni e sal il e s, ha e been epo ed [
15
–
22
]. Compa ed wi h
single-mode uni e sal il e s in [
5
–
15
], mixed-mode uni e sal il e s in [
15
–
22
] can p o-
ide la ge il e ing esponses. Un o una ely, hese mixed-mode uni e sal il e s canno
ealize ou modes o ope a ion in o a single opology. The e a e mixed-mode uni e sal
il e s ha can ealize VM, CM, TAM, and TIM il e s in o a single opology a ailable in
he li e a u e
[23–45]
. Howe e , some o hese opologies su e om some d awbacks
as ollows:
1. Lack o elec onic unabili y [24–29,34,35,38–41];
2. Employmen o loa ing passi e componen s [24–29,32,35,38,39,41,44–46];
3. Ac i e o passi e componen ma ching condi ion [24–35,37,39,41,44,46];
4.
Inpu signal ma ching condi ion o equi emen o a minus- ype inpu signal [
30
,
31
,
33,34,37,39,45];
5.
Inpu ol age signal being applied ia capaci o o esis o
[24–29,32,34,35,38,39,41,44–46]
;
and
6.
Inabili y o p o ide a leas wen y il e ing esponses in o a single opology [
23
,
24
,
27
,
29,33,36,38,40,42,45].
A uni e sal il e ha allows elec onic unabili y can o e some ad an ages such as he
ease o compensa ion when he na u al equency is de ia ed by he e ec o empe a u e
o p ocess a ia ions, while a uni e sal il e wi hou a loa ing capaci o and esis o
and ee om he passi e componen ma ching condi ion is mo e sui able o in eg a ed
ci cui implemen a ion. A uni e sal il e ha equi es a minus- ype inpu signal o an
inpu signal ma ching condi ion needs addi ional ci cui s such as cu en -mi o o CM
ope a ion o in e ing ampli ie o VM ope a ion. This equi emen de ec s VM ope a ion
because many passi e componen s a e usually equi ed, unless he uni e sal il e p o ides
a ully di e en ial s uc u e. Finally, a uni e sal il e ha p o ides a leas wen y il e ing
esponses means ha each ope a ion mode can ealize i e s anda d il e ing esponses;
hence, he ull capabili y o he mixed-mode uni e sal il e can be ob ained.
This s udy ocused on a mixed-mode uni e sal il e ha could ealize VM, CM, TAM,
and TIM il e s in o a single opology. Each ope a ion mode could ealize i e s anda d
il e ing esponses; hus, wen y il e ing esponses could be ob ained. The ac i e de ice,
named di e en ial di e ence ansconduc ance ampli ie (DDTA), was used in his s udy.
This de ice employs high-inpu impedance e minals wi h he ad an age o inpu ol age
a i hme ic ope a ion such as he di e en ial di e ence ampli ie (DDA) [
47
], and he ca-
pabili y o elec onic uning such as he ansconduc ance ampli ie . Thus, a DDTA-based
ci cui is easy o addi ion and sub ac ion o ol age signals and possesses an elec onic
uning capabili y [
48
–
51
]. Unlike he s anda d di e en ial di e ence ansconduc ance
ampli ie ha was c ea ed by wo di e en ial pai DDAs ollowed by he ansconduc ance
ampli ie p esen ed in [
52
], he p oposed DDTA is based on one mul iple-inpu di e en-
ial pai DDA [
53
–
56
] ha se es as a di e en ial di e ence ansconduc ance ampli ie
ollowed by a ol age bu e . The e o e, he p oposed DDTA could educe he coun o
ac i e blocks, powe dissipa ion, and chip a ea as a esul o using he mul iple-inpu MOS
ansis o (MI
−
MOST) echnique [
57
]. I is wo h no ing ha he MI-MOST comes wi h
se e al ad an ages compa ed wi h he mul iple-inpu loa ing-ga e (MIFG) ansis o [
58
].
The MIFG ansis o uses he cha ge con e sa ion p inciple and hence i is incompa ible
wi h mode n nanoscale ga e-leakage CMOS echnologies [
59
]. The MIFG implemen a ion
equi es wo-polysilicon echnology, and he emaining esidual cha ge on i s ga e causes
ol age o se . The e o e, a new DDTA-based mixed-mode uni e sal il e ha could p o-
ide a leas wen y il e ing esponses o VM, CM, TAM, and TIM il e s is p esen ed in
his pape . The DDTA uses he MI
−
MOST echnique ha o e s simpli ica ion o i s o e all
s uc u e and a educ ion in he powe dissipa ion. The p oposed mixed-mode uni e sal
il e o e s he ollowing ad an ages such as:
i. elec onic uning capabili y;
ii. being ee om a loa ing passi e componen ;
Senso s 2022,22, 3535 3 o 21
iii. being ee om a passi e componen ma ching condi ion;
i . lacking a minus- ype inpu signal o an inpu signal ma ching condi ion;
. no applying he inpu ol age signal ia a capaci o o esis o ; and
i.
each ope a ion o VM, TAM, CM and TIM o e ing i e s anda d il e ing esponses.
The compa ison o he p oposed il e wi h he p e ious mixed-mode uni e sal il e s
is shown in Table 1. Compa ed wi h [
30
,
31
] ha ha e equal ac i e and passi e componen s,
he p oposed il e is ee om ac i e and passi e componen ma ching condi ions as
well as he minus- ype inpu signal equi emen . Compa ed wi h [
43
] ha o e s simila
pe o mances, he p oposed il e employs ewe componen s and p o ides mo e il e ing
unc ions. Compa ed wi h [
44
–
46
] ha employ ewe de ices, he p oposed il e applies
he inpu ol age signal ia a high-impedance node whe eas he il e s in [
44
–
46
] apply he
inpu ol age signal ia a capaci o o esis o .
This pape is o ganized as ollows: in Sec ion 2, he TA-based DDA using MI-MOSTs
and he p oposed mixed-mode uni e sal il e a e p esen ed; Sec ion 3p esen s he simula-
ion esul s and expe imen al esul s; and Sec ion 4concludes he pape .
Senso s 2022,22, 3535 4 o 21
Table 1. Compa ison he p oposed il e wi h he p e ious mixed-mode uni e sal il e .
Re . No. o De ice Powe
Supply
No. o
C&R
Ob aining
Func ion
PD
[mW]
THD o LP
[%]
BW
[kHz] (i) (ii) (iii) (i ) ( ) ( i)
[23] 2003 4-CCCII - 2 & 0 14 - - - Yes Yes Yes Yes Yes No
[24] 2004 5-CCII - 2 & 7 12 - - - No No No Yes No No
[25] 2005 4-CFOA ±12 V 2 & 9 20 - - 112.5 No No No Yes No Yes
[26] 2006 3-CCII ±12 V 3 & 4 20 - - - No No No Yes No Yes
[27] 2006 3-FTFN - 2 & 3 11 - - 31.8 No No Yes Yes No No
[28] 2007 2-DDCC ±1.25 V 2 & 4 20 - - 4.973 ×103No No No Yes No Yes
[29] 2008 1-FDCCII ±1.25 V 2 & 3 17 - - 3.316 ×103No No No Yes No No
[30] 2009 5-OTA ±1.65 V 2 & 0 24 30.95 - 1×103Yes Yes No No Yes Yes
[31] 2010 5-OTA ±1.25 V 2 & 0 20 -
0.777@400 mV
pp 1.591 ×103Yes Yes No No Yes Yes
[32] 2010 2-CCCII ±2.5 V 2 & 1 20 - <5@500 µApp 1.27 ×103Yes No No Yes No Yes
[33] 2011 3-CCCCTA ±1 V 2 & 0 16 4.84 - 1.06 ×103Yes Yes No No Yes No
[34] 2011 3-DDCC ±1.25 V 2 & 3 30 - 0.723@60 µApp 3.978 ×103No Yes No No Yes Yes
[35] 2011 3-DDCC ±1.25 V 2 & 4 20 - - 3.978 ×103No No No Yes No Yes
[36] 2012 4-MOCCCII ±2.5 V 2 & 0 12 - - - Yes Yes Yes Yes Yes No
[37] 2013 4-MOCCCII ±1.25 V 2 & 0 20 - 0.5@300 µApp - Yes Yes No No Yes Yes
[38] 2015 2-CCII ±1.25 V 2 & 2 11 - - 2×103No No Yes Yes No No
[39] 2016 1-FDCCII, 1-DDCC ±0.9 V 2 & 6 46 - 2.2@300 mVpp 1.591 ×103No No No No No Yes
[40] 2016 2-DVCC ±1.25 V 2 & 3 14 - - 3.978 ×103No Yes Yes Yes Yes No
[41] 2016 2-FDCCII ±0.9 V 2 & 5 25 -
0.971@200 mV
pp 1.591 ×103No No No Yes No Yes
[42] 2017 3-CCCCTA ±0.9 V 2 & 0 18 1.99 2.16@500 mVpp 3.183 ×103Yes Yes Yes Yes Yes No
[43] 2017 6-MI-OTA ±0.5 V 2 & 0 20 0.075 2@50 mVpp 1.5 ×103Yes Yes Yes Yes Yes Yes
[44] 2020 2-EXCCTA ±1.25 V 2 & 4 20 - <5@520 mVpp 7.622 ×103Yes No No Yes No Yes
Senso s 2022,22, 3535 5 o 21
Table 1. Con .
Re . No. o De ice Powe
Supply
No. o
C&R
Ob aining
Func ion
PD
[mW]
THD o LP
[%]
BW
[kHz] (i) (ii) (iii) (i ) ( ) ( i)
[45] 2021 1-EX-CCCII ±0.5 V 2 & 1 17 1.35 0.2@520 mVpp 23 ×103Yes No Yes No No No
[46] 2021 1-VD-EXCCII ±1.25 V. 2 & 3 20 5.76 <7.5@650 mVpp 8.084 ×103Yes No No Yes No Yes
This s udy 5-DDTA 1.2 V 2 & 0 36 0.33 1.09@650 mVpp 1.04 Yes Yes Yes Yes Yes Yes
No e: PD = powe dissipa ion, THD = o al ha monic dis o ion, and BW = bandwid h.

Senso s 2022,22, 3535 6 o 21
2. P oposed Ci cui
2.1. P oposed Mixed-Mode Uni e sal Fil e
The symbol o DDTA is shown in Figu e 1a. The ela ionship o he e minals can be
exp essed by
Vw=Vy1−Vy2+Vy3
Io=GmVw(1)
Senso s 2022, 22, x FOR PEER REVIEW 5 o 21
2. P oposed Ci cui
2.1. P oposed Mixed-Mode Uni e sal Fil e
The symbol o DDTA is shown in Figu e 1a. The ela ionship o he e minals can be
exp essed by
𝑉𝑤=𝑉𝑦1−𝑉𝑦2+𝑉𝑦3
𝐼𝑜=𝐺𝑚𝑉𝑤}
(1)
I should be no ed ha he ou pu 𝑉𝑤 is he addi ion and sub ac ion o inpu s 𝑉𝑦1,
𝑉𝑦2, and 𝑉𝑦3, while he ou pu 𝐼𝑜 is he cu en ha is con e ed om 𝑉𝑤 by 𝐺𝑚, whe e
𝐺𝑚 is he in e nal ansconduc ance o DDTA. The e o e, DDTA included he DDA as an
inpu s age ha se es also as a ansconduc ance ampli ie (TA) as an ou pu s age. Com-
pa ed wi h he di e en ial di e ence cu en con eyo ansconduc ance ampli ie
(DDCCTA) [60], he DDTA s uc u e employs less MOS ansis o s. Figu e 1b shows he
in e nal s uc u e o he p oposed DDTA. The ol age ollowe (VF) ci cui was used o
a oid he loading e ec . The e o e, he w- e minal possessed a low-impedance le el ha
could be di ec ly connec ed o a low- esis ance ex e nal load.
DDTA
y1
o
Vy1 Io
w
Vw
y3
Vy3
y2
Vy2
+
-
+
-
-
y1
y2
y3w
TA-based DDA
VF
(a) (b)
Rse
-
-
Io
Io
DDA
w'
Figu e 1. TA-based DDA: (a) symbol; (b) in e nal s uc u e.
The s uc u e o DDTA in [52] was de eloped o he DDTA using MI-MOST as shown
in Figu e 2. Figu e 3a shows he MI-MOST symbol wi h n numbe o inpu s whe e he
inpu e minals V1, …, Vn a e coupled o he ga e e minal o he con en ional MOST by n
inpu capaci o s CG1, …, CGn. To gua an ee he DC ope a ion, he high esis ances RMOS1,
…, RMOSn a e connec ed in pa allel o each inpu capaci o , as shown in Figu e 3b. The high
esis ance 𝑅𝑀𝑂𝑆 is implemen ed by wo MOSTs (MR) ope a ing in he cu -o egion as
shown in Figu e 3c, which o e s a minimum a ea o chip. I is wo h no ing ha he
pseudo- esis o s shun he inpu capaci o s o p ope DC ope a ion o he inpu ansis-
o ; he e o e, he e a e no loa ing-ga e issues as in he case o he MIFG ansis o . How-
e e , o AC ope a ion, he inpu capaci o s c ea e a sho ci cui o he AC signal, he
same as in he case o he MIFG echnique.
M1
M3
M2
Mb
Ib
M4M5
M9
RMOS
M6
Cc
C
VDD
VSS
y1
y3y2
Vb
Rse
M10
M7
o
M11
M8
o
IoIoM13
M14
M12
M15 M16
M18
RMOS1
M17
Cc1
C1
Vb
w
w'
Figu e 2. TA-based DDA using MI-MOSTs.
Figu e 1. TA-based DDA: (a) symbol; (b) in e nal s uc u e.
I should be no ed ha he ou pu
Vw
is he addi ion and sub ac ion o inpu s
Vy1
,
Vy2
and
Vy3
, while he ou pu
Io
is he cu en ha is con e ed om
Vw
by
Gm
, whe e
Gm
is he
in e nal ansconduc ance o DDTA. The e o e, DDTA included he DDA as an inpu s age
ha se es also as a ansconduc ance ampli ie (TA) as an ou pu s age. Compa ed wi h
he di e en ial di e ence cu en con eyo ansconduc ance ampli ie (DDCCTA) [
60
],
he DDTA s uc u e employs less MOS ansis o s. Figu e 1b shows he in e nal s uc u e
o he p oposed DDTA. The ol age ollowe (VF) ci cui was used o a oid he loading
e ec . The e o e, he w- e minal possessed a low-impedance le el ha could be di ec ly
connec ed o a low- esis ance ex e nal load.
The s uc u e o DDTA in [
52
] was de eloped o he DDTA using MI-MOST as shown
in Figu e 2. Figu e 3a shows he MI-MOST symbol wi h n numbe o inpu s whe e he
inpu e minals V
1
,
. . .
, V
n
a e coupled o he ga e e minal o he con en ional MOST by n
inpu capaci o s C
G1
,
. . .
, C
Gn
. To gua an ee he DC ope a ion, he high esis ances R
MOS1
,
. . .
, R
MOSn
a e connec ed in pa allel o each inpu capaci o , as shown in Figu e 3b. The
high esis ance
RMOS
is implemen ed by wo MOSTs (M
R
) ope a ing in he cu -o egion
as shown in Figu e 3c, which o e s a minimum a ea o chip. I is wo h no ing ha he
pseudo- esis o s shun he inpu capaci o s o p ope DC ope a ion o he inpu ansis o ;
he e o e, he e a e no loa ing-ga e issues as in he case o he MIFG ansis o . Howe e ,
o AC ope a ion, he inpu capaci o s c ea e a sho ci cui o he AC signal, he same as
in he case o he MIFG echnique.
Senso s 2022, 22, x FOR PEER REVIEW 5 o 21
2. P oposed Ci cui
2.1. P oposed Mixed-Mode Uni e sal Fil e
The symbol o DDTA is shown in Figu e 1a. The ela ionship o he e minals can be
exp essed by
𝑉𝑤=𝑉𝑦1−𝑉𝑦2+𝑉𝑦3
𝐼𝑜=𝐺𝑚𝑉𝑤}
(1)
I should be no ed ha he ou pu 𝑉𝑤 is he addi ion and sub ac ion o inpu s 𝑉𝑦1,
𝑉𝑦2, and 𝑉𝑦3, while he ou pu 𝐼𝑜 is he cu en ha is con e ed om 𝑉𝑤 by 𝐺𝑚, whe e
𝐺𝑚 is he in e nal ansconduc ance o DDTA. The e o e, DDTA included he DDA as an
inpu s age ha se es also as a ansconduc ance ampli ie (TA) as an ou pu s age. Com-
pa ed wi h he di e en ial di e ence cu en con eyo ansconduc ance ampli ie
(DDCCTA) [60], he DDTA s uc u e employs less MOS ansis o s. Figu e 1b shows he
in e nal s uc u e o he p oposed DDTA. The ol age ollowe (VF) ci cui was used o
a oid he loading e ec . The e o e, he w- e minal possessed a low-impedance le el ha
could be di ec ly connec ed o a low- esis ance ex e nal load.
DDTA
y1
o
Vy1 Io
w
Vw
y3
Vy3
y2
Vy2
+
-
+
-
-
y1
y2
y3w
TA-based DDA
VF
(a) (b)
Rse
-
-
Io
Io
DDA
w'
Figu e 1. TA-based DDA: (a) symbol; (b) in e nal s uc u e.
The s uc u e o DDTA in [52] was de eloped o he DDTA using MI-MOST as shown
in Figu e 2. Figu e 3a shows he MI-MOST symbol wi h n numbe o inpu s whe e he
inpu e minals V1, …, Vn a e coupled o he ga e e minal o he con en ional MOST by n
inpu capaci o s CG1, …, CGn. To gua an ee he DC ope a ion, he high esis ances RMOS1,
…, RMOSn a e connec ed in pa allel o each inpu capaci o , as shown in Figu e 3b. The high
esis ance 𝑅𝑀𝑂𝑆 is implemen ed by wo MOSTs (MR) ope a ing in he cu -o egion as
shown in Figu e 3c, which o e s a minimum a ea o chip. I is wo h no ing ha he
pseudo- esis o s shun he inpu capaci o s o p ope DC ope a ion o he inpu ansis-
o ; he e o e, he e a e no loa ing-ga e issues as in he case o he MIFG ansis o . How-
e e , o AC ope a ion, he inpu capaci o s c ea e a sho ci cui o he AC signal, he
same as in he case o he MIFG echnique.
M1
M3
M2
Mb
Ib
M4M5
M9
RMOS
M6
Cc
C
VDD
VSS
y1
y3y2
Vb
Rse
M10
M7
o
M11
M8
o
IoIoM13
M14
M12
M15 M16
M18
RMOS1
M17
Cc1
C1
Vb
w
w'
Figu e 2. TA-based DDA using MI-MOSTs.
Figu e 2. TA-based DDA using MI-MOSTs.
I is wo h no ing ha he mul iple inpu echniques a e simply c ea ed by a se o
pa allel capaci o s shun ed wi h high- esis ance pseudo- esis o s (M
R
). This echnique can
be applied o he ga e-, bulk-, ga e-bulk (DTMOS), o bulk-quasi- loa ing-ga e e minals o
a s anda d MOS ansis o [61].
In Figu e 2, he ansis o s M
1
–M
6
and M
9
c ea e he DDA co e ci cui . The MI-
MOST di e en ial pai s M
1
and M
2
, he ansis o M
3
, and he wo cu en sou ces M
4
Senso s 2022,22, 3535 7 o 21
and M
5
c ea e he di e en ial s age o he DDA. The ansis o M
3
along wi h M
2
and
M
5
c ea e a lipped ol age ollowe (FVF) [
62
] and i is used o en o ce he cu en o
M
3
(i.e., I
M3
) o be equal o he ail cu en , same as in he case o he di e en ial s age
o he con en ional s uc u e. The FVF modi ies he ga e o M
3
o ensu e equal d ain
cu en s o bo h di e en ial pai s M
1
and M
2
[
63
]. Fu he mo e, due o he FVF, he
minimum ol age supply is he sum o one ga e-sou ce and one d ain-sou ce ol age
(VDD(min)=VGS−M3+VDS−M5).
Senso s 2022, 22, x FOR PEER REVIEW 6 o 21
M
V1
CG1
Vn
MRMOS
=
MR
MR
RMOS1
RMOSn
S
G
D
V1
Vn
(a) (b) (c)
CGn
Figu e 3. MI-MOST: (a) symbol; (b) ealiza ion; (c) ealiza ion o he la ge esis ance alue.
I is wo h no ing ha he mul iple inpu echniques a e simply c ea ed by a se o
pa allel capaci o s shun ed wi h high- esis ance pseudo- esis o s (MR). This echnique can
be applied o he ga e-, bulk-, ga e-bulk (DTMOS), o bulk-quasi- loa ing-ga e e minals
o a s anda d MOS ansis o [61].
In Figu e 2, he ansis o s M1–M6 and M9 c ea e he DDA co e ci cui . The MI-MOST
di e en ial pai s M1 and M2, he ansis o M3, and he wo cu en sou ces M4 and M5
c ea e he di e en ial s age o he DDA. The ansis o M3 along wi h M2 and M5 c ea e a
lipped ol age ollowe (FVF) [62] and i is used o en o ce he cu en o M3 (i.e., IM3) o
be equal o he ail cu en , same as in he case o he di e en ial s age o he con en ional
s uc u e. The FVF modi ies he ga e o M3 o ensu e equal d ain cu en s o bo h di e -
en ial pai s M1 and M2 [63]. Fu he mo e, due o he FVF, he minimum ol age supply is
he sum o one ga e-sou ce and one d ain-sou ce ol age (𝑉𝐷𝐷(min)=𝑉𝐺𝑆−𝑀3+𝑉𝐷𝑆−𝑀5).
T ansis o s M6 and M9 o m a supe class AB second s age [64]. The RMOS is espon-
sible o he ga e DC biasing o he ansis o M6, whe eas he capaci o C deli e s he AC
signal o his ga e. The node 𝑤′ is connec ed o he inpu e minal o M2, c ea ing nega i e
eedback o ob aining a uni y-gain ol age ollowe . The DDA s abili y is insu ed by he
compensa ion capaci o Cc. The ansis o s M12–M18, RMOS1, and capaci o s Cc1 and C1 a e
used o wo k as a ol age ollowe ci cui . The ope a ion is simila o he i s s age o
DDTA ha was p e iously explained. The e o e, he ela ionship 𝑉𝑤=𝑉𝑦1−𝑉𝑦2+𝑉𝑦3
(𝑉𝑤=𝑉𝑤′) can be ob ained. The bias cu en 𝐼𝑏 and Mb gene a ed he bias ol age 𝑉𝑏 o
M4−M8 and M15−M17. The e minal 𝑤′ is connec ed o a linea adjus able esis o 𝑅𝑠𝑒𝑡 ha
con e s he ol age 𝑉𝑤′ o cu en 𝐼𝑤′. This cu en is mi o ed by M7−M10 o he o- e -
minals; hus, 𝐼𝑜=𝐼𝑤′ can be achie ed. Addi ional ou pu cu en o- e minals can be ob-
ained using complemen a y ansis o s such as M8 and M11. Hence, his pa wo ks as a
ansconduc ance ampli ie . The ou pu cu en 𝐼𝑜 is ob ained as
𝑉𝑤′=(𝑉𝑦1−𝑉𝑦2+𝑉𝑦3)
(2)
𝐼𝑜=𝑉𝑤′
𝑅𝑠𝑒𝑡=(𝑉𝑦1−𝑉𝑦2+𝑉𝑦3)
𝑅𝑠𝑒𝑡
(3)
𝐺𝑚𝑠𝑒𝑡=1
𝑅𝑠𝑒𝑡=𝐼𝑜
(𝑉𝑦1−𝑉𝑦2+𝑉𝑦3)
(4)
No e ha he high linea i y is achie ed due o he linea esis ance Rse . The DDA
ope a es in a closed loop, jus o ming a second-gene a ion cu en con eyo , wi h he 𝑤′
ou pu e minal loaded by Rse , and such a con igu a ion can be conside ed as a anscon-
duc ance ampli ie . Howe e , he a enua ion o he inpu signal by capaci o s allows en-
la ging he inpu common mode ange, as well as he ange o linea ope a ion ( he ange
whe e he so-called ha d nonlinea i ies associa ed wi h changing he egion o ope a ion
o ansis o s do no appea ).
The p oposed mixed-mode uni e sal il e using DDTAs is shown in Figu e 4. I con-
sis ed o i e DDTAs and wo g ounded capaci o s. The a ian ans e unc ions could
be ob ained by applying he app op ia e inpu signals 𝑉𝑖𝑛1,𝑉𝑖𝑛2,𝐼𝑖𝑛1, and 𝐼𝑖𝑛2 and selec -
ing he app op ia e ou pu signals 𝑉𝑜1,𝑉𝑜2,𝑉𝑜3,𝑉𝑜4,𝑉𝑜5,𝐼𝑜1, and 𝐼𝑜2. The inpu ol age
Figu e 3. MI-MOST: (a) symbol; (b) ealiza ion; (c) ealiza ion o he la ge esis ance alue.
T ansis o s M
6
and M
9
o m a supe class AB second s age [
64
]. The
RMOS
is esponsi-
ble o he ga e DC biasing o he ansis o M
6
, whe eas he capaci o C deli e s he AC
signal o his ga e. The node
w0
is connec ed o he inpu e minal o M
2
, c ea ing nega i e
eedback o ob aining a uni y-gain ol age ollowe . The DDA s abili y is insu ed by he
compensa ion capaci o C
c
. The ansis o s M
12
–M
18
, R
MOS1
, and capaci o s C
c1
and C
1
a e used o wo k as a ol age ollowe ci cui . The ope a ion is simila o he i s s age o
DDTA ha was p e iously explained. The e o e, he ela ionship
Vw=Vy1−Vy2+Vy3
(
Vw=Vw0
) can be ob ained. The bias cu en
Ib
and M
b
gene a ed he bias ol age
Vb
o
M
4−
M
8
and M
15−
M
17
. The e minal
w0
is connec ed o a linea adjus able esis o
Rse
ha con e s he ol age
Vw0
o cu en
Iw0
. This cu en is mi o ed by M
7−
M
10
o he
o- e minals; hus,
Io=Iw0
can be achie ed. Addi ional ou pu cu en o- e minals can be
ob ained using complemen a y ansis o s such as M
8
and M
11
. Hence, his pa wo ks as a
ansconduc ance ampli ie . The ou pu cu en Iois ob ained as
Vw0=Vy1−Vy2+Vy3(2)
Io=Vw0
Rse
=Vy1−Vy2+Vy3
Rse (3)
Gmse =1
Rse
=Io
Vy1−Vy2+Vy3(4)
No e ha he high linea i y is achie ed due o he linea esis ance R
se
. The DDA ope -
a es in a closed loop, jus o ming a second-gene a ion cu en con eyo , wi h he
w0
ou pu
e minal loaded by R
se
, and such a con igu a ion can be conside ed as a ansconduc ance
ampli ie . Howe e , he a enua ion o he inpu signal by capaci o s allows enla ging he
inpu common mode ange, as well as he ange o linea ope a ion ( he ange whe e he
so-called ha d nonlinea i ies associa ed wi h changing he egion o ope a ion o ansis o s
do no appea ).
The p oposed mixed-mode uni e sal il e using DDTAs is shown in Figu e 4. I
consis ed o i e DDTAs and wo g ounded capaci o s. The a ian ans e unc ions could
be ob ained by applying he app op ia e inpu signals
Vin1
,
Vin2
,
Iin1
, and
Iin2
and selec ing
he app op ia e ou pu signals
Vo1
,
Vo2
,
Vo3
,
Vo4
,
Vo5
,
Io1
, and
Io2
. The inpu ol age which
is no used (
Vin =
0) should be a ached o g ound while he inpu cu en which is no
used (
Iin =
0) should be loa ed. The
Gmse j
(
Gmse j =
1
/Rse j
) is he ansconduc ance o
Senso s 2022,22, 3535 8 o 21
DDTAj
(
j=
1, 2, 3, 4, 5). Using (1) and nodal analysis, he ou pu ol ages and cu en s o
he p oposed mixed-mode uni e sal il e can be exp essed by
Vo1=
Gmse 5(sC2Gmse 2+Gmse 1Gmse 2)Vin1−Gmse 1Gmse 2Gmse 5Vin2
−Gmse 5(sC2+Gmse 1)Iin1−Gmse 1Gmse 2Iin2
D(s)(5)
Vo2=
Gmse 1Gmse 2Gmse 5Vin1+sC1Gmse 1Gmse 5Vin2
−Gmse 1Gmse 5Iin1+sC1Gmse 1Iin2
D(s)(6)
Vo3=
sC2Gmse 2Gmse 5Vin1+s2C1C2Gmse 5Vin2
−sC2Gmse 5Iin1+s2C1C2Iin2
D(s)(7)
Vo4=
Gmse 1Gmse 2Gmse 5Vin1−Gmse 5(s2C1C2+Gmse 1Gmse 2)Vin2
−Gmse 1Gmse 5Iin1−s2C1C2+Gmse 1Gmse 2Iin2
D(s)(8)
Vo5=
2Gmse 1Gmse 2Gmse 5Vin1−Gmse 5s2C1C2−sC1Gmse 1+Gmse 1Gmse 2Vin2
−2Gmse 1Gmse 5Iin1−s2C1C2−sC1Gmse 1+Gmse 1Gmse 2Iin2
D(s)(9)
Io1=
sC2Gmse 1Gmse 2Gmse 5Vin1+s2C1C2Gmse 1Gmse 5Vin2
−sC2Gmse 1Gmse 5Iin1+s2C1C2Gmse 1Iin2
D(s)(10)
Io2=
Gmse 2Gmse 5s2C1C2+sC1Gmse 1Vin1−sC1Gmse 1Gmse 2Gmse 5Vin2
−Gmse 5s2C1C2+sC1Gmse 1Iin1−sC1Gmse 1Gmse 2Iin2
D(s)(11)
Io3=
Gmse 1Gmse 2Gmse 3Gmse 5Vin1−Gmse 3Gmse 5s2C1C2+Gmse 1Gmse 2Vin2
−Gmse 1Gmse 3Gmse 5Iin1−Gmse 3s2C1C2+Gmse 1Gmse 2Iin2
D(s)(12)
Io4=
2Gmse 1Gmse 2Gmse 4Gmse 5Vin1−Gmse 4Gmse 5s2C1C2−sC1Gmse 1+Gmse 1Gmse 2Vin2
−2Gmse 1Gmse 4Gmse 5Iin1−Gmse 4s2C1C2−sC1Gmse 1+Gmse 1Gmse 2Iin2
D(s)(13)
whe e
D(s)=s2C1C2Gmse 5+sC1Gmse 1Gmse 5+Gmse 1Gmse 2Gmse 5
. By app op ia ely ap-
plying he inpu signals (
Vin1
,
Vin2
,
Iin1
, and
Iin2
) and choosing he ou pu e minals (
Vo1
,
Vo2
,
Vo3
,
Vo4
,
Vo5
,
Io1
,
Io2
,
Io3
, and
Io4
), he VM, CM, TAM, and TIM il e s can be exp essed
as in Table 3. I was e iden ha he p oposed il e o e s ou modes o ope a ion in o a
single opology. Each mode o ope a ion p o ides i e s anda d il e ing ans e unc ions;
hence, a leas wen y ans e unc ions can be ob ained. In addi ion, se e al il e ing
unc ions can be ob ained om he same mode o ope a ion; hus, he p oposed opology
can p o ide 36 il e ing unc ions.
I should be no ed ha some il e ing unc ions o e some ad an ages such as he
gain o ans e unc ion when
Vin1
is he inpu and
Vo5
is he ou pu o LP o he VM il e ,
he high-Q il e when Vin1=Vin2is he inpu and Vo2is he ou pu o BP o he VM il e ,
and o e bo h non-in e ing and in e ing il e ing unc ions o HP o TAM il e .
The na u al equency (
ωo
) and he quali y ac o (
Q
) o he p oposed il e can be
gi en as
ωo=sGmse 1Gmse 2
C1C2
(14)
Senso s 2022,22, 3535 9 o 21
Q=sC2Gmse 2
C1Gmse 1
(15)
F om (14) and (15), he pa ame e
ωo
can be adjus ed elec onically by
Gmse 1
and
Gmse 2
whe eas he pa ame e
Q
can be gi en by
C2/C1
by keeping
Gmse 1
=
Gmse 2
. Thus,
he p oposed il e can be elec onically con olled o pa ame e
ωo
and o hogonally
con olled o pa ame e s ωoand Q.
Senso s 2022, 22, x FOR PEER REVIEW 8 o 21
DDTA1
y1o
w
y3
y2o
DDTA2
y2o
w
y3
y1o
DDTA3
y1o
w
y3
y2
DDTA4
y1o
w
y3
y2
Vo3
Vo5
C2
Io4
Io2
Io3
Io1
Vo4
Vin1
Vin2
Iin2
Vo1
DDTA5
y1o
w
y3
y2
C1
Iin1
Vo2
Figu e 4. P oposed mixed-mode uni e sal il e using DDTAs.
I should be no ed ha some il e ing unc ions o e some ad an ages such as he
gain o ans e unc ion when 𝑉𝑖𝑛1 is he inpu and 𝑉𝑜5 is he ou pu o LP o he VM
il e , he high-Q il e when 𝑉𝑖𝑛1 = 𝑉𝑖𝑛2 is he inpu and 𝑉𝑜2 is he ou pu o BP o he
VM il e , and o e bo h non-in e ing and in e ing il e ing unc ions o HP o TAM
il e .
The na u al equency (𝜔𝑜) and he quali y ac o (𝑄) o he p oposed il e can be
gi en as
𝜔𝑜=√𝐺𝑚𝑠𝑒𝑡1𝐺𝑚𝑠𝑒𝑡2
𝐶1𝐶2
(14)
𝑄=√𝐶2𝐺𝑚𝑠𝑒𝑡2
𝐶1𝐺𝑚𝑠𝑒𝑡1
(15)
F om (14) and (15), he pa ame e 𝜔𝑜 can be adjus ed elec onically by 𝐺𝑚𝑠𝑒𝑡1 and
𝐺𝑚𝑠𝑒𝑡2 whe eas he pa ame e 𝑄 can be gi en by 𝐶2/𝐶1 by keeping 𝐺𝑚𝑠𝑒𝑡1 = 𝐺𝑚𝑠𝑒𝑡2.
Thus, he p oposed il e can be elec onically con olled o pa ame e 𝜔𝑜 and o hogo-
nally con olled o pa ame e s 𝜔𝑜 and 𝑄.
I should be no ed ha he e minals 𝑉𝑜3, 𝑉𝑜4, and 𝑉𝑜5 possess low-ou pu imped-
ance whe eas he e minals 𝐼𝑜1, 𝐼𝑜2, 𝐼𝑜3, and 𝐼𝑜4 possess a high-ou pu impedance, and
hus he loads can be connec ed di ec ly wi hou addi ional bu e ci cui equi emen s.
The e minals 𝑉𝑖𝑛1 and 𝑉𝑖𝑛2 possess a high-inpu impedance, hence he condi ion such
as 𝑉𝑖𝑛1 = 𝑉𝑖𝑛2 is no equi ed o addi ional bu e ci cui s. Howe e , he e minals 𝑉𝑜1
and 𝑉𝑜2 do no p o ide a low-ou pu impedance and he e minals 𝐼𝑖𝑛1 and 𝐼𝑖𝑛2 do no
p o ide a low-inpu impedance; he e o e, he bu e ci cui s may be equi ed i low-im-
pedance loads a e connec ed and i low-impedance cu en signals a e supplied. In he
case o CM and TIM il e s, he ma ching condi ion is absen and in he case o VM and
TAM, he in e ing- ype inpu is no used.
2.2. Non-Ideali y Analysis
Conside ing non-ideali ies o DDTA, (1) can be ew i en as
Figu e 4. P oposed mixed-mode uni e sal il e using DDTAs.
I should be no ed ha he e minals
Vo3
,
Vo4
, and
Vo5
possess low-ou pu impedance
whe eas he e minals
Io1
,
Io2
,
Io3
, and
Io4
possess a high-ou pu impedance, and hus
he loads can be connec ed di ec ly wi hou addi ional bu e ci cui equi emen s. The
e minals
Vin1
and
Vin2
possess a high-inpu impedance, hence he condi ion such as
Vin1=Vin2
is no equi ed o addi ional bu e ci cui s. Howe e , he e minals
Vo1
and
Vo2
do no p o ide a low-ou pu impedance and he e minals
Iin1
and
Iin2
do no p o ide
a low-inpu impedance; he e o e, he bu e ci cui s may be equi ed i low-impedance
loads a e connec ed and i low-impedance cu en signals a e supplied. In he case o CM
and TIM il e s, he ma ching condi ion is absen and in he case o VM and TAM, he
in e ing- ype inpu is no used.
2.2. Non-Ideali y Analysis
Conside ing non-ideali ies o DDTA, (1) can be ew i en as
Vw=βj1Vy1−βj2Vy2+βj3Vy3
Io=Gmse njVw(16)
whe e
βj1=
1
−εj1
and
εj1 (εj1 
1) deno e he ol age acking e o om
Vy1
o
Vw
o
j
- h DDTA,
βj2=
1
−εj2
and
εj2 (εj2 
1) deno e he ol age acking e o om
Vy2
o
Vw
o
j
- h DDTA and
βj3=
1
−εj3
and
εj3 (εj3 
1) deno e he ol age acking
e o om Vy2 o Vwo j- h DDTA.
The non-ideal ansconduc ance gain Gmse nj is gi en by
Gmse nj(s)= ωgmj
s+ωgmj !Gmse j (17)
Senso s 2022,22, 3535 16 o 21
Senso s 2022, 22, x FOR PEER REVIEW 15 o 21
The VM il e was used o es i s empe a u e pe o mance. The simula ed magni-
ude equency esponses o he LP, BP, HP, BS, and AP il e when he empe a u e was
a ied om −10 o 70 °C a e shown in Figu e 14 . The p oposed il e was also in es iga ed
using a Mon e Ca lo analysis by assuming ha he luc ua ion o he na u al equency
changes caused by de ia ion o he capaci o s and he h eshold ol age o he MOS an-
sis o . The BP esponse o he VM il e was simula ed by se ing 5% ole ances o he
capaci o s C1 and C2 and 5% a ia ions o he ansis o h eshold ol age a 1.04 kHz, Q
≅ 1, and 200 Gaussian dis ibu ion uns. Figu e 15 shows he de i ed his og am o he
na u al equency which exp essed ha he s anda d de ia ion (σ) o o was 33.339 Hz and
he maximal and minimal alues o o we e 1.132 kHz and 0.967 kHz, espec i ely.
-60
-50
-40
-30
-20
-10
0
10
Magni ude, dB
1.0 10 100 1.0k 10k 100k 1.0M
F equency, Hz
Temp. = -10 o 70 ºC
Figu e 14. The simula ed magni ude equency esponses o he uni e sal il e wi h empe a u e
a ia ion.
F equency [kHz]
0.950 0.975 1.000 1.025 1.050 1.075 1.100 1.125 1.150
0
5
10
15
20
25
30
n samples = 200
n di isions = 10
mean = 1039.89
sigma = 33.3392
minimum = 967.449
10 h % = 998.841
median = 1037.94
90 h % = 1084.83
maximum = 1132.88
Pe cen o Samples
Figu e 15. The his og am o he cu o equency o he uni e sal il e wi h 200 uns o MC analysis.
Figu e 15.
The his og am o he cu o equency o he uni e sal il e wi h 200 uns o MC analysis.
3.2. Expe imen al Resul s
The p oposed mixed-mode uni e sal il e was also es ed expe imen ally o con i m
i s unc ionali y. The simula ion esul s based on he mac o model and he measu ed
esul s a e included o compa ison. The DDTA was ealized using OTAs as shown in
Figu e 16 [
52
]. The p o o ype ci cui was ealized using comme cially a ailable in eg a ed
ci cui LM13700N ha consis s o wo cu en -con olled ansconduc ance ampli ie s.
No e he bene i o he MI-MOST on he TA-based DDA in Figu e 2in simpli ying he
CMOS s uc u e and educing he numbe o ICs needed o build he il e applica ion.
Fo ins ance, o c ea e he mul iple inpu (y
1
, y
2
, and y
3
) o he DDA in Figu e 16, wo
ansconduc ance ampli ie s (OTA
1
, OTA
2
) a e needed and ano he wo OTAs a e needed
o cons uc he TA, hence wo LM13700Ns a e needed o each DDTA.
Senso s 2022, 22, x FOR PEER REVIEW 16 o 21
3.2. Expe imen al Resul s
The p oposed mixed-mode uni e sal il e was also es ed expe imen ally o con i m
i s unc ionali y. The simula ion esul s based on he mac o model and he measu ed e-
sul s a e included o compa ison. The DDTA was ealized using OTAs as shown in Fig-
u e 16 [52]. The p o o ype ci cui was ealized using comme cially a ailable in eg a ed
ci cui LM13700N ha consis s o wo cu en -con olled ansconduc ance ampli ie s.
No e he bene i o he MI-MOST on he TA-based DDA in Figu e 2 in simpli ying he
CMOS s uc u e and educing he numbe o ICs needed o build he il e applica ion.
Fo ins ance, o c ea e he mul iple inpu (y1, y2, and y3) o he DDA in Figu e 16, wo
ansconduc ance ampli ie s (OTA1, OTA2) a e needed and ano he wo OTAs a e needed
o cons uc he TA, hence wo LM13700Ns a e needed o each DDTA.
OTA1
OTA2
y1gmo
DDA
y2
y3
w
gm
TA
o
Figu e 16. OTA-based DDTA [52].
Fo measu emen se up, he supply ol age was ±5 V and he capaci ances C1 and C2
we e 220 nF. The Agilen Technology DSOX 1102G oscilloscope was used o supplying
he sinusoidal inpu signal and measu ing he ou pu wa e o ms. The ansconduc ances
𝑔𝑚1 = 𝑔𝑚2 = 𝑔𝑚3 = 𝑔𝑚4 = 𝑔𝑚5 = 1.51 mS we e designed o ob ain he mixed-mode il e
wi h he na u al equency o 1.09 kHz and he quali y ac o o 1 (𝑄 ≅ 1). Figu es 17a,
18a, 19a and 20a show he expe imen al equency esponses o he LP, HP, BP, and BS
esponses o he VM, CM, TAM, and TIM il e s, espec i ely. Figu es 17b, 18b, 19b and
20b show he expe imen al equency esponse o magni ude and phase cha ac e is ics o
he AP esponses o he VM, CM, TAM, and TIM il e s, espec i ely. To measu e he e-
quency esponses o TAM il e , a esis o was used o con e he ou pu cu en o ol -
age, and he ol age acco ding o his esis ance was calcula ed o he ou pu cu en o
plo ing. In case o CM and TIM il e s, he high esis ances (i.e., 𝑅𝑖𝑛 ≫ 662 Ω) we e used
o con e he inpu ol age o he inpu cu en a inpu e minals and con e he ou pu
cu en o he ou pu ol age ou pu e minals. The ol age acco ding o he esis ances
was calcula ed as cu en s o plo ing.
Figu e 16. OTA-based DDTA [52].
Fo measu emen se up, he supply ol age was
±
5 V and he capaci ances C
1
and
C
2
we e 220 nF. The Agilen Technology DSOX 1102G oscilloscope was used o supplying
he sinusoidal inpu signal and measu ing he ou pu wa e o ms. The ansconduc ances
gm1=gm2=gm3=gm4=gm5= 1.51 mS
we e designed o ob ain he mixed-mode il e wi h he
na u al equency o 1.09 kHz and he quali y ac o o 1 (
Q∼
=
1).
Figu es 17a, 18a, 19a and 20a
show he expe imen al equency esponses o he LP, HP, BP, and BS esponses o he VM,
CM, TAM, and TIM il e s, espec i ely. Figu es 17b, 18b, 19b and 20b show he expe imen-
al equency esponse o magni ude and phase cha ac e is ics o he AP esponses o he

Senso s 2022,22, 3535 17 o 21
VM, CM, TAM, and TIM il e s, espec i ely. To measu e he equency esponses o TAM
il e , a esis o was used o con e he ou pu cu en o ol age, and he ol age acco ding
o his esis ance was calcula ed o he ou pu cu en o plo ing. In case o CM and TIM
il e s, he high esis ances (i.e.,
Rin 
662
Ω
) we e used o con e he inpu ol age o he
inpu cu en a inpu e minals and con e he ou pu cu en o he ou pu ol age ou pu
e minals. The ol age acco ding o he esis ances was calcula ed as cu en s o plo ing.
Senso s 2022, 22, x FOR PEER REVIEW 17 o 21
(a)
(b)
Figu e 17. Expe imen al equency esponses o he VM il e : (a) LP, BP, HP, BS il e s; (b) AP il-
e .
(a)
(b)
Figu e 18. Expe imen al equency esponses o he CM il e : (a) LP, BP, HP, BS il e s; (b) AP il-
e .
-60
-50
-40
-30
-20
-10
0
10
1 100 10000 1000000
Magni ude [dB]
F equency [Hz]
LP (Exp) LP (Sim)
HP (Exp) HP (Sim)
BP (Exp) BP (Sim)
BS (Exp) BS (Sim)
-240
-180
-120
-60
0
60
120
180
240
-40
-30
-20
-10
0
10
20
30
40
1 100 10000 1000000
Phase [º]
Magni ude [dB]
F equency [Hz]
Magni ude (Exp)
Magni ude (Sim)
Phase (Exp)
Phase (Sim)
-60
-50
-40
-30
-20
-10
0
10
1 10 100 1000 10000 100000 1000000
Magni ude [dB]
F equency [Hz]
LP [Exp] LP [Sim]
HP [Exp] HP [Sim]
BP [Exp] BP [Sim]
BS [Exp] BS [Sim]
-240
-180
-120
-60
0
60
120
180
240
-40
-30
-20
-10
0
10
20
30
40
1 100 10000 1000000
Phase []
Magni ude [dB]
F equency [Hz]
Magni ude [Exp]
Magni ude [Sim]
Phase [Exp]
Phase [Sim]
Figu e 17. Expe imen al equency esponses o he VM il e : (a) LP, BP, HP, BS il e s; (b) AP il e .
Senso s 2022, 22, x FOR PEER REVIEW 17 o 21
(a)
(b)
Figu e 17. Expe imen al equency esponses o he VM il e : (a) LP, BP, HP, BS il e s; (b) AP il-
e .
(a)
(b)
Figu e 18. Expe imen al equency esponses o he CM il e : (a) LP, BP, HP, BS il e s; (b) AP il-
e .
-60
-50
-40
-30
-20
-10
0
10
1 100 10000 1000000
Magni ude [dB]
F equency [Hz]
LP (Exp) LP (Sim)
HP (Exp) HP (Sim)
BP (Exp) BP (Sim)
BS (Exp) BS (Sim)
-240
-180
-120
-60
0
60
120
180
240
-40
-30
-20
-10
0
10
20
30
40
1 100 10000 1000000
Phase [º]
Magni ude [dB]
F equency [Hz]
Magni ude (Exp)
Magni ude (Sim)
Phase (Exp)
Phase (Sim)
-60
-50
-40
-30
-20
-10
0
10
1 10 100 1000 10000 100000 1000000
Magni ude [dB]
F equency [Hz]
LP [Exp] LP [Sim]
HP [Exp] HP [Sim]
BP [Exp] BP [Sim]
BS [Exp] BS [Sim]
-240
-180
-120
-60
0
60
120
180
240
-40
-30
-20
-10
0
10
20
30
40
1 100 10000 1000000
Phase []
Magni ude [dB]
F equency [Hz]
Magni ude [Exp]
Magni ude [Sim]
Phase [Exp]
Phase [Sim]
Figu e 18. Expe imen al equency esponses o he CM il e : (a) LP, BP, HP, BS il e s; (b) AP il e .
The expe imen al equency esponses o he BP esponse o he VM il e wi h di e en
ansconduc ances (
gm
= 0.48 mS, 0.87 mS, 1.51 mS, and 2.93 mS) a e shown in Figu e 21.
This esul was used o con i m ha he p oposed mixed-mode il e p o ides an elec onic
uning abili y wi hou d ubbing he quali y ac o . The Expe imen al se up o he uni e sal
il e is shown in Figu e S1 in he Supplemen a y Ma e ials.
Senso s 2022,22, 3535 18 o 21
Senso s 2022, 22, x FOR PEER REVIEW 18 o 21
(a)
(b)
Figu e 19. Expe imen al equency esponses o he TAM il e : (a) LP, BP, HP, BS il e s; (b) AP il-
e .
(a)
(b)
Figu e 20. Expe imen al equency esponses o he TIM il e : (a) LP, BP, HP, BS il e s; (b) AP
il e .
The expe imen al equency esponses o he BP esponse o he VM il e wi h di -
e en ansconduc ances (𝑔𝑚 = 0.48 mS, 0.87 mS, 1.51 mS, and 2.93 mS) a e shown in Fig-
u e 21. This esul was used o con i m ha he p oposed mixed-mode il e p o ides an
elec onic uning abili y wi hou d ubbing he quali y ac o . The Expe imen al se up o
he uni e sal il e is shown in Figu e S1 in he Supplemen a y Ma e ials.
-120
-110
-100
-90
-80
-70
-60
-50
1 100 10000 1000000
Magni ude [dB]
F equency [Hz]
LP (Exp) LP (Sim)
HP (Exp) HP (Sim)
BP (Exp) BP (Sim)
BS (Exp) BS (Sim)
-240
-180
-120
-60
0
60
120
180
240
-100
-90
-80
-70
-60
-50
-40
-30
-20
1 100 10000 1000000
Phase [º]
Magni ude [dB]
F equency [Hz]
Magni ude [Exp]
Magni ude [Sim]
Phase [Exp]
Phase [Sim]
0
10
20
30
40
50
60
70
1 10 100 1000 10000 100000 1000000
F equency [Hz]
F equency [Hz]
LP [Exp] LP [Sim]
HP [Exp] HP [Sim]
BP [Exp] BP [Sim]
BS [Exp] BS [Sim]
-240
-180
-120
-60
0
60
120
180
240
20
30
40
50
60
70
80
90
1 100 10000 1000000
Phase [º]
Magni ude [dB]
F equency [Hz]
Magni ude [Exp]
Magni ude [Sim]
Phase [Exp]
Phase [Sim]
Figu e 19.
Expe imen al equency esponses o he TAM il e : (
a
) LP, BP, HP, BS il e s; (
b
) AP il e .
Senso s 2022, 22, x FOR PEER REVIEW 18 o 21
(a)
(b)
Figu e 19. Expe imen al equency esponses o he TAM il e : (a) LP, BP, HP, BS il e s; (b) AP il-
e .
(a)
(b)
Figu e 20. Expe imen al equency esponses o he TIM il e : (a) LP, BP, HP, BS il e s; (b) AP
il e .
The expe imen al equency esponses o he BP esponse o he VM il e wi h di -
e en ansconduc ances (𝑔𝑚 = 0.48 mS, 0.87 mS, 1.51 mS, and 2.93 mS) a e shown in Fig-
u e 21. This esul was used o con i m ha he p oposed mixed-mode il e p o ides an
elec onic uning abili y wi hou d ubbing he quali y ac o . The Expe imen al se up o
he uni e sal il e is shown in Figu e S1 in he Supplemen a y Ma e ials.
-120
-110
-100
-90
-80
-70
-60
-50
1 100 10000 1000000
Magni ude [dB]
F equency [Hz]
LP (Exp) LP (Sim)
HP (Exp) HP (Sim)
BP (Exp) BP (Sim)
BS (Exp) BS (Sim)
-240
-180
-120
-60
0
60
120
180
240
-100
-90
-80
-70
-60
-50
-40
-30
-20
1 100 10000 1000000
Phase [º]
Magni ude [dB]
F equency [Hz]
Magni ude [Exp]
Magni ude [Sim]
Phase [Exp]
Phase [Sim]
0
10
20
30
40
50
60
70
1 10 100 1000 10000 100000 1000000
F equency [Hz]
F equency [Hz]
LP [Exp] LP [Sim]
HP [Exp] HP [Sim]
BP [Exp] BP [Sim]
BS [Exp] BS [Sim]
-240
-180
-120
-60
0
60
120
180
240
20
30
40
50
60
70
80
90
1 100 10000 1000000
Phase [º]
Magni ude [dB]
F equency [Hz]
Magni ude [Exp]
Magni ude [Sim]
Phase [Exp]
Phase [Sim]
Figu e 20.
Expe imen al equency esponses o he TIM il e : (
a
) LP, BP, HP, BS il e s; (
b
) AP il e .
Senso s 2022, 22, x FOR PEER REVIEW 19 o 21
Figu e 21. The expe imen al equency esponses o he BP esponse o he VM il e wi h di e en
ansconduc ances.
4. Conclusions
A new mixed-mode uni e sal il e using i e DDTAs and wo g ounded capaci o s
was shown in his pape . The p oposed il e o e s 36 il e ing esponses in o a single
opology using he DDTA-based ci cui . The na u al equency and he quali y ac o can
be se o hogonally and elec onically con olled. The pe o mance o he p oposed il e
was e alua ed in PSPICE simula ion using he TSMC 0.18 µm CMOS echnology and in-
es iga ed by expe imen es s using LM13600 disc e e componen in eg a ed ci cui as
DDTAs. The simula ion esul s we e in ag eemen wi h he expe imen al esul s.
Supplemen a y Ma e ials: The ollowing suppo ing in o ma ion can be downloaded a :
www.mdpi.com/xxx/s1, Figu e S1: Expe imen al se up o he uni e sal il e .
Au ho Con ibu ions: Concep ualiza ion, F.K. and M.K.; me hodology, M.K. and T.K.; so wa e,
M.K. and P.S.; expe men a ion, F.K.; alida ion, F.K., P.S. and M.K.; o mal analysis, M.K. and T.K.;
in es iga ion, F.K., M.K. and T.K.; w i ing—o iginal d a p epa a ion, M.K. and F.K.; w i ing— e-
iew and edi ing, M.K., F.K. and T.K. All au ho s ha e ead and ag eed o he published e sion o
he manusc ip .
Funding: This wo k was suppo ed by King Mongku ’s Ins i u e o Technology Ladk abang unde
G an KREF026201, and by he Uni e si y o De ence B no wi hin he O ganiza ion De elopmen
P ojec VAROPS.
Con lic s o In e es : The au ho s decla e no con lic o in e es .
Re e ences
1. Wang, S.-F.; Chen, H.-P.; Ku, Y.; Le, C.-L. Ve sa ile ol age-modde biquad a ic il e and quad a u e oscilla o using ou OTAs
and wo g ounded capaci o s. Elec onics 2020, 9, 1493.
2. Alexande , C.K.; Sadiku, M.N.O. Fundamen als o Elec ic Ci cui s, 6 h ed.; McG aw-Hill: New Yo k, NY, USA, 2017; pp. 658–660.
3. Li, Y. A modi ied CDTA (MCDTA) and i s applica ions: Designing Cu en -Mode Six h-O de Ellip ic Band-Pass Fil e . Ci cui s
Sys . Signal P ocess. 2011, 30, 1383–1390.
4. MAX260 Maxim In eg a ed. A ailable online: h ps://www.maximin eg a ed.com/en/p oduc s/analog/analog- il-
e s/MAX260.h ml (accessed on 5 Janua y 2022).
5. Psychalinos, C.; Kasimis, C.; Kha eb, F. Mul iple-inpu single-ou pu uni e sal biquad il e using single ou pu ope a ional
ansconduc ance ampli ie s. In . J. Elec on. Commun. 2018, 93, 360–367.
6. Wang, S.-F.; Chen, H.-P.; Ku, Y.; Yang, C.-M. Independen ly unable ol age-mode OTA-C biquad a ic il e wi h i e inpu s
and h ee ou pu s and i s ully-uncoupled quad a u e sinusoidal oscilla o applica ion. AEU In . J. Elec on. Commun. 2019, 110,
152822.
-60
-50
-40
-30
-20
-10
0
10
1 10 100 1000 10000 100000 1000000
Magni ude [dB]
F equency [Hz]
gm=0.48mS (Exp)
gm=0.48mS (Sim)
gm=0.87mS (Exp)
gm=0.87mS (Sim)
gm=1.51mS (Exp)
gm=1.51mS (Sim)
gm=2.93mS (Exp)
gm=2.93mS (Sim)
Figu e 21.
The expe imen al equency esponses o he BP esponse o he VM il e wi h di e en
ansconduc ances.
Senso s 2022,22, 3535 19 o 21
4. Conclusions
A new mixed-mode uni e sal il e using i e DDTAs and wo g ounded capaci o s
was shown in his pape . The p oposed il e o e s 36 il e ing esponses in o a single
opology using he DDTA-based ci cui . The na u al equency and he quali y ac o
can be se o hogonally and elec onically con olled. The pe o mance o he p oposed
il e was e alua ed in PSPICE simula ion using he TSMC 0.18
µ
m CMOS echnology and
in es iga ed by expe imen es s using LM13600 disc e e componen in eg a ed ci cui as
DDTAs. The simula ion esul s we e in ag eemen wi h he expe imen al esul s.
Supplemen a y Ma e ials:
The ollowing suppo ing in o ma ion can be downloaded a : h ps://
www.mdpi.com/a icle/10.3390/s22093535/s1, Figu e S1: Expe imen al se up o he uni e sal il e .
Au ho Con ibu ions:
Concep ualiza ion, F.K. and M.K.; me hodology, M.K. and T.K.; so wa e,
M.K. and P.S.; expe men a ion, F.K.; alida ion, F.K., P.S. and M.K.; o mal analysis, M.K. and T.K.;
in es iga ion, F.K., M.K. and T.K.; w i ing—o iginal d a p epa a ion, M.K. and F.K.;
w i ing— e iew
and edi ing, M.K., F.K. and T.K. All au ho s ha e ead and ag eed o he published e sion o
he manusc ip .
Funding:
This wo k was suppo ed by King Mongku ’s Ins i u e o Technology Ladk abang unde
G an KREF026201, and by he Uni e si y o De ence B no wi hin he O ganiza ion De elopmen
P ojec VAROPS.
Con lic s o In e es : The au ho s decla e no con lic o in e es .
Re e ences
1.
Wang, S.-F.; Chen, H.-P.; Ku, Y.; Le, C.-L. Ve sa ile ol age-modde biquad a ic il e and quad a u e oscilla o using ou OTAs
and wo g ounded capaci o s. Elec onics 2020,9, 1493. [C ossRe ]
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3.
Li, Y. A modi ied CDTA (MCDTA) and i s applica ions: Designing Cu en -Mode Six h-O de Ellip ic Band-Pass Fil e . Ci cui s
Sys . Signal P ocess. 2011,30, 1383–1390. [C ossRe ]
4.
MAX260 Maxim In eg a ed. A ailable online: h ps://www.maximin eg a ed.com/en/p oduc s/analog/analog- il e s/MAX2
60.h ml (accessed on 5 Janua y 2022).
5.
Psychalinos, C.; Kasimis, C.; Kha eb, F. Mul iple-inpu single-ou pu uni e sal biquad il e using single ou pu ope a ional
ansconduc ance ampli ie s. In . J. Elec on. Commun. 2018,93, 360–367. [C ossRe ]
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Wang, S.-F.; Chen, H.-P.; Ku, Y.; Yang, C.-M. Independen ly unable ol age-mode OTA-C biquad a ic il e wi h i e inpu s
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,
110, 152822. [C ossRe ]
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Kuma , A.; Paul, S.K. N h o de cu en mode uni e sal il e using MOCCCIIs. Analog. In eg . Ci cui s Signal P ocess.
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