1.2 V Differential Difference Transconductance Amplifier and Its Application in Mixed-Mode Universal Filter

Ci a ion: Kumnge n, M.; Suksaibul, P.; Kha eb, F.; Kulej, T. 1.2 V Di e en ial Di e ence T ansconduc ance Ampli ie and I s Applica ion in Mixed-Mode Uni e sal Fil e . Senso s 2022,22, 3535. h ps://doi.o g/10.3390/ s22093535 Academic Edi o s: Ha uo Kobayashi and Al io Da io G asso Recei ed: 8 Ma ch 2022 Accep ed: 4 May 2022 Published: 6 May 2022 Publishe ’s No e: MDPI s ays neu al wi h ega d o ju isdic ional claims in published maps and ins i u ional a il- ia ions. Copy igh : © 2022 by he au ho s. Licensee MDPI, Basel, Swi ze land. This a icle is an open access a icle dis ibu ed unde he e ms and condi ions o he C ea i e Commons A ibu ion (CC BY) license (h ps:// c ea i ecommons.o g/licenses/by/ 4.0/). senso s A icle 1.2 V Di e en ial Di e ence T ansconduc ance Ampli ie and I s Applica ion in Mixed-Mode Uni e sal Fil e Mon ee Kumnge n 1, Pichai Suksaibul 1, Fabian Kha eb 2,3,4,* and Tomasz Kulej 5 1Depa men o Telecommunica ions Enginee ing, School o Enginee ing, King Mongku ’s Ins i u e o Technology Ladk abang, Bangkok 10520, Thailand; [email p o ec ed] (M.K.); [email p o ec ed] (P.S.) 2Depa men o Mic oelec onics, B no Uni e si y o Technology, Technická10, 601 90 B no, Czech Republic 3Facul y o Biomedical Enginee ing, Czech Technical Uni e si y in P ague, nám. Sí ná3105, 272 01 Kladno, Czech Republic 4 Depa men o Elec ical Enginee ing, B no Uni e si y o De ence, Kounico a 65, 662 10 B no, Czech Republic 5Depa men o Elec ical Enginee ing, Czes ochowa Uni e si y o Technology, 42-201 Czes ochowa, Poland; [email p o ec ed] *Co espondence: kha eb@ u b .cz; Tel.: +420-54114-6128 Abs ac : This pape p esen s a new mixed-mode uni e sal il e based on a di e en ial di e ence ansconduc ance ampli ie (DDTA). Unlike he con en ional ansconduc ance ampli ie (TA), his DDTA has bo h ad an ages o he TA and he di e en ial di e ence ampli ie (DDA). The p oposed il e can o e ou -mode ope a ions o second-o de ans e unc ions in o a single opology, namely, ol age-mode (VM), cu en -mode (CM), ansadmi ance-mode (TAM), and ansimpedance-mode (TIM) ans e unc ions. Each ope a ion mode o e s i e s anda d il e ing esponses; he e o e, a leas wen y il e ing ans e unc ions can be ob ained. Fo he il e ing ans e unc ions, he ma ching condi ions o he inpu and passi e componen a e absen . The na u al equency and he quali y ac o can be se o hogonally and elec onically con olled. The pe o mance o he p oposed opology was e alua ed by PSPICE simula o using he 0.18 µ m CMOS echnology om he Taiwan Semiconduc o Manu ac u ing Company (TSMC). The ol age supply was 1.2 V and he powe dissipa ion o he DDTA was 66 µ W. The wo kabili y o he il e was con i med h ough expe imen al es by DDTA-based LM13600 disc e e-componen in eg a ed ci cui s. Keywo ds: mixed-mode il e ; uni e sal il e ; di e en ial di e ence ansconduc ance ampli ie ; analog signal p ocessing 1. In oduc ion Uni e sal il e s a e basic elec onic blocks ha usually p o ide i e il e ing esponses in o a single opology, namely, low-pass (LP), high pass (HP), band pass (BP), band s op (BS), and all pass (AP) il e s. The applica ions such as h ee c osso e ne wo k high- ideli y loudspeake s [ 1 , 2 ], ouch- one elephone one decode s [ 2 ], and high-o de il e s [ 3 ] equi e uni e sal il e s as he basic building blocks. Mo eo e , uni e sal il e s can be ab ica ed as comme cial p og ammable il e -in eg a ed ci cui s [ 4 ]. As a comme cially a ailable IC, i is aluable i a single IC can p o ide a mul i-mode il e ha depends on he applica ions o he ci cui designe . The e a e many uni e sal il e s a ailable in he open li e a u e, o example, see [ 5 – 14 ]. Conside ing inpu and ou pu signals, hese uni e sal il e s can be classi ied as ou -mode ope a ions as ollows: ol age-mode (VM) il e when bo h inpu and ou pu signals a e in ol age o m [ 5 , 6 ]; cu en -mode (CM) il e when bo h inpu and ou pu signals a e in cu en o m [7,8]; ansadmi ance-mode (TAM) il e when he inpu signal is in ol age o m while he ou pu signal is in cu en o m [ 9 – 11 ], and inally ansimpedance-mode (TIM) il e when he inpu signal is in cu en o m while he ou pu signal is in ol age o m [ 12 – 14 ]. I should be no ed ha he uni e sal il e s in [ 12 – 14 ] o e only a single-mode il e . Senso s 2022,22, 3535. h ps://doi.o g/10.3390/s22093535 h ps://www.mdpi.com/jou nal/senso s Senso s 2022,22, 3535 2 o 21 Recen ly, uni e sal il e s ha ope a e as mul i-mode il e s in o a single opology, he so-called mixed-mode uni e sal il e s, ha e been epo ed [ 15 – 22 ]. Compa ed wi h single-mode uni e sal il e s in [ 5 – 15 ], mixed-mode uni e sal il e s in [ 15 – 22 ] can p o- ide la ge il e ing esponses. Un o una ely, hese mixed-mode uni e sal il e s canno ealize ou modes o ope a ion in o a single opology. The e a e mixed-mode uni e sal il e s ha can ealize VM, CM, TAM, and TIM il e s in o a single opology a ailable in he li e a u e [23–45] . Howe e , some o hese opologies su e om some d awbacks as ollows: 1. Lack o elec onic unabili y [24–29,34,35,38–41]; 2. Employmen o loa ing passi e componen s [24–29,32,35,38,39,41,44–46]; 3. Ac i e o passi e componen ma ching condi ion [24–35,37,39,41,44,46]; 4. Inpu signal ma ching condi ion o equi emen o a minus- ype inpu signal [ 30 , 31 , 33,34,37,39,45]; 5. Inpu ol age signal being applied ia capaci o o esis o [24–29,32,34,35,38,39,41,44–46] ; and 6. Inabili y o p o ide a leas wen y il e ing esponses in o a single opology [ 23 , 24 , 27 , 29,33,36,38,40,42,45]. A uni e sal il e ha allows elec onic unabili y can o e some ad an ages such as he ease o compensa ion when he na u al equency is de ia ed by he e ec o empe a u e o p ocess a ia ions, while a uni e sal il e wi hou a loa ing capaci o and esis o and ee om he passi e componen ma ching condi ion is mo e sui able o in eg a ed ci cui implemen a ion. A uni e sal il e ha equi es a minus- ype inpu signal o an inpu signal ma ching condi ion needs addi ional ci cui s such as cu en -mi o o CM ope a ion o in e ing ampli ie o VM ope a ion. This equi emen de ec s VM ope a ion because many passi e componen s a e usually equi ed, unless he uni e sal il e p o ides a ully di e en ial s uc u e. Finally, a uni e sal il e ha p o ides a leas wen y il e ing esponses means ha each ope a ion mode can ealize i e s anda d il e ing esponses; hence, he ull capabili y o he mixed-mode uni e sal il e can be ob ained. This s udy ocused on a mixed-mode uni e sal il e ha could ealize VM, CM, TAM, and TIM il e s in o a single opology. Each ope a ion mode could ealize i e s anda d il e ing esponses; hus, wen y il e ing esponses could be ob ained. The ac i e de ice, named di e en ial di e ence ansconduc ance ampli ie (DDTA), was used in his s udy. This de ice employs high-inpu impedance e minals wi h he ad an age o inpu ol age a i hme ic ope a ion such as he di e en ial di e ence ampli ie (DDA) [ 47 ], and he ca- pabili y o elec onic uning such as he ansconduc ance ampli ie . Thus, a DDTA-based ci cui is easy o addi ion and sub ac ion o ol age signals and possesses an elec onic uning capabili y [ 48 – 51 ]. Unlike he s anda d di e en ial di e ence ansconduc ance ampli ie ha was c ea ed by wo di e en ial pai DDAs ollowed by he ansconduc ance ampli ie p esen ed in [ 52 ], he p oposed DDTA is based on one mul iple-inpu di e en- ial pai DDA [ 53 – 56 ] ha se es as a di e en ial di e ence ansconduc ance ampli ie ollowed by a ol age bu e . The e o e, he p oposed DDTA could educe he coun o ac i e blocks, powe dissipa ion, and chip a ea as a esul o using he mul iple-inpu MOS ansis o (MI − MOST) echnique [ 57 ]. I is wo h no ing ha he MI-MOST comes wi h se e al ad an ages compa ed wi h he mul iple-inpu loa ing-ga e (MIFG) ansis o [ 58 ]. The MIFG ansis o uses he cha ge con e sa ion p inciple and hence i is incompa ible wi h mode n nanoscale ga e-leakage CMOS echnologies [ 59 ]. The MIFG implemen a ion equi es wo-polysilicon echnology, and he emaining esidual cha ge on i s ga e causes ol age o se . The e o e, a new DDTA-based mixed-mode uni e sal il e ha could p o- ide a leas wen y il e ing esponses o VM, CM, TAM, and TIM il e s is p esen ed in his pape . The DDTA uses he MI − MOST echnique ha o e s simpli ica ion o i s o e all s uc u e and a educ ion in he powe dissipa ion. The p oposed mixed-mode uni e sal il e o e s he ollowing ad an ages such as: i. elec onic uning capabili y; ii. being ee om a loa ing passi e componen ; Senso s 2022,22, 3535 3 o 21 iii. being ee om a passi e componen ma ching condi ion; i . lacking a minus- ype inpu signal o an inpu signal ma ching condi ion; . no applying he inpu ol age signal ia a capaci o o esis o ; and i. each ope a ion o VM, TAM, CM and TIM o e ing i e s anda d il e ing esponses. The compa ison o he p oposed il e wi h he p e ious mixed-mode uni e sal il e s is shown in Table 1. Compa ed wi h [ 30 , 31 ] ha ha e equal ac i e and passi e componen s, he p oposed il e is ee om ac i e and passi e componen ma ching condi ions as well as he minus- ype inpu signal equi emen . Compa ed wi h [ 43 ] ha o e s simila pe o mances, he p oposed il e employs ewe componen s and p o ides mo e il e ing unc ions. Compa ed wi h [ 44 – 46 ] ha employ ewe de ices, he p oposed il e applies he inpu ol age signal ia a high-impedance node whe eas he il e s in [ 44 – 46 ] apply he inpu ol age signal ia a capaci o o esis o . This pape is o ganized as ollows: in Sec ion 2, he TA-based DDA using MI-MOSTs and he p oposed mixed-mode uni e sal il e a e p esen ed; Sec ion 3p esen s he simula- ion esul s and expe imen al esul s; and Sec ion 4concludes he pape . Senso s 2022,22, 3535 4 o 21 Table 1. Compa ison he p oposed il e wi h he p e ious mixed-mode uni e sal il e . Re . No. o De ice Powe Supply No. o C&R Ob aining Func ion PD [mW] THD o LP [%] BW [kHz] (i) (ii) (iii) (i ) ( ) ( i) [23] 2003 4-CCCII - 2 & 0 14 - - - Yes Yes Yes Yes Yes No [24] 2004 5-CCII - 2 & 7 12 - - - No No No Yes No No [25] 2005 4-CFOA ±12 V 2 & 9 20 - - 112.5 No No No Yes No Yes [26] 2006 3-CCII ±12 V 3 & 4 20 - - - No No No Yes No Yes [27] 2006 3-FTFN - 2 & 3 11 - - 31.8 No No Yes Yes No No [28] 2007 2-DDCC ±1.25 V 2 & 4 20 - - 4.973 ×103No No No Yes No Yes [29] 2008 1-FDCCII ±1.25 V 2 & 3 17 - - 3.316 ×103No No No Yes No No [30] 2009 5-OTA ±1.65 V 2 & 0 24 30.95 - 1×103Yes Yes No No Yes Yes [31] 2010 5-OTA ±1.25 V 2 & 0 20 - 0.777@400 mV pp 1.591 ×103Yes Yes No No Yes Yes [32] 2010 2-CCCII ±2.5 V 2 & 1 20 - <5@500 µApp 1.27 ×103Yes No No Yes No Yes [33] 2011 3-CCCCTA ±1 V 2 & 0 16 4.84 - 1.06 ×103Yes Yes No No Yes No [34] 2011 3-DDCC ±1.25 V 2 & 3 30 - 0.723@60 µApp 3.978 ×103No Yes No No Yes Yes [35] 2011 3-DDCC ±1.25 V 2 & 4 20 - - 3.978 ×103No No No Yes No Yes [36] 2012 4-MOCCCII ±2.5 V 2 & 0 12 - - - Yes Yes Yes Yes Yes No [37] 2013 4-MOCCCII ±1.25 V 2 & 0 20 - 0.5@300 µApp - Yes Yes No No Yes Yes [38] 2015 2-CCII ±1.25 V 2 & 2 11 - - 2×103No No Yes Yes No No [39] 2016 1-FDCCII, 1-DDCC ±0.9 V 2 & 6 46 - 2.2@300 mVpp 1.591 ×103No No No No No Yes [40] 2016 2-DVCC ±1.25 V 2 & 3 14 - - 3.978 ×103No Yes Yes Yes Yes No [41] 2016 2-FDCCII ±0.9 V 2 & 5 25 - 0.971@200 mV pp 1.591 ×103No No No Yes No Yes [42] 2017 3-CCCCTA ±0.9 V 2 & 0 18 1.99 2.16@500 mVpp 3.183 ×103Yes Yes Yes Yes Yes No [43] 2017 6-MI-OTA ±0.5 V 2 & 0 20 0.075 2@50 mVpp 1.5 ×103Yes Yes Yes Yes Yes Yes [44] 2020 2-EXCCTA ±1.25 V 2 & 4 20 - <5@520 mVpp 7.622 ×103Yes No No Yes No Yes Senso s 2022,22, 3535 5 o 21 Table 1. Con . Re . No. o De ice Powe Supply No. o C&R Ob aining Func ion PD [mW] THD o LP [%] BW [kHz] (i) (ii) (iii) (i ) ( ) ( i) [45] 2021 1-EX-CCCII ±0.5 V 2 & 1 17 1.35 0.2@520 mVpp 23 ×103Yes No Yes No No No [46] 2021 1-VD-EXCCII ±1.25 V. 2 & 3 20 5.76 <7.5@650 mVpp 8.084 ×103Yes No No Yes No Yes This s udy 5-DDTA 1.2 V 2 & 0 36 0.33 1.09@650 mVpp 1.04 Yes Yes Yes Yes Yes Yes No e: PD = powe dissipa ion, THD = o al ha monic dis o ion, and BW = bandwid h. Senso s 2022,22, 3535 6 o 21 2. P oposed Ci cui 2.1. P oposed Mixed-Mode Uni e sal Fil e The symbol o DDTA is shown in Figu e 1a. The ela ionship o he e minals can be exp essed by Vw=Vy1−Vy2+Vy3 Io=GmVw(1) Senso s 2022, 22, x FOR PEER REVIEW 5 o 21 2. P oposed Ci cui 2.1. P oposed Mixed-Mode Uni e sal Fil e The symbol o DDTA is shown in Figu e 1a. The ela ionship o he e minals can be exp essed by 𝑉𝑤=𝑉𝑦1−𝑉𝑦2+𝑉𝑦3 𝐼𝑜=𝐺𝑚𝑉𝑤} (1) I should be no ed ha he ou pu 𝑉𝑤 is he addi ion and sub ac ion o inpu s 𝑉𝑦1, 𝑉𝑦2, and 𝑉𝑦3, while he ou pu 𝐼𝑜 is he cu en ha is con e ed om 𝑉𝑤 by 𝐺𝑚, whe e 𝐺𝑚 is he in e nal ansconduc ance o DDTA. The e o e, DDTA included he DDA as an inpu s age ha se es also as a ansconduc ance ampli ie (TA) as an ou pu s age. Com- pa ed wi h he di e en ial di e ence cu en con eyo ansconduc ance ampli ie (DDCCTA) [60], he DDTA s uc u e employs less MOS ansis o s. Figu e 1b shows he in e nal s uc u e o he p oposed DDTA. The ol age ollowe (VF) ci cui was used o a oid he loading e ec . The e o e, he w- e minal possessed a low-impedance le el ha could be di ec ly connec ed o a low- esis ance ex e nal load. DDTA y1 o Vy1 Io w Vw y3 Vy3 y2 Vy2 + - + - - y1 y2 y3w TA-based DDA VF (a) (b) Rse - - Io Io DDA w' Figu e 1. TA-based DDA: (a) symbol; (b) in e nal s uc u e. The s uc u e o DDTA in [52] was de eloped o he DDTA using MI-MOST as shown in Figu e 2. Figu e 3a shows he MI-MOST symbol wi h n numbe o inpu s whe e he inpu e minals V1, …, Vn a e coupled o he ga e e minal o he con en ional MOST by n inpu capaci o s CG1, …, CGn. To gua an ee he DC ope a ion, he high esis ances RMOS1, …, RMOSn a e connec ed in pa allel o each inpu capaci o , as shown in Figu e 3b. The high esis ance 𝑅𝑀𝑂𝑆 is implemen ed by wo MOSTs (MR) ope a ing in he cu -o egion as shown in Figu e 3c, which o e s a minimum a ea o chip. I is wo h no ing ha he pseudo- esis o s shun he inpu capaci o s o p ope DC ope a ion o he inpu ansis- o ; he e o e, he e a e no loa ing-ga e issues as in he case o he MIFG ansis o . How- e e , o AC ope a ion, he inpu capaci o s c ea e a sho ci cui o he AC signal, he same as in he case o he MIFG echnique. M1 M3 M2 Mb Ib M4M5 M9 RMOS M6 Cc C VDD VSS y1 y3y2 Vb Rse M10 M7 o M11 M8 o IoIoM13 M14 M12 M15 M16 M18 RMOS1 M17 Cc1 C1 Vb w w' Figu e 2. TA-based DDA using MI-MOSTs. Figu e 1. TA-based DDA: (a) symbol; (b) in e nal s uc u e. I should be no ed ha he ou pu Vw is he addi ion and sub ac ion o inpu s Vy1 , Vy2 and Vy3 , while he ou pu Io is he cu en ha is con e ed om Vw by Gm , whe e Gm is he in e nal ansconduc ance o DDTA. The e o e, DDTA included he DDA as an inpu s age ha se es also as a ansconduc ance ampli ie (TA) as an ou pu s age. Compa ed wi h he di e en ial di e ence cu en con eyo ansconduc ance ampli ie (DDCCTA) [ 60 ], he DDTA s uc u e employs less MOS ansis o s. Figu e 1b shows he in e nal s uc u e o he p oposed DDTA. The ol age ollowe (VF) ci cui was used o a oid he loading e ec . The e o e, he w- e minal possessed a low-impedance le el ha could be di ec ly connec ed o a low- esis ance ex e nal load. The s uc u e o DDTA in [ 52 ] was de eloped o he DDTA using MI-MOST as shown in Figu e 2. Figu e 3a shows he MI-MOST symbol wi h n numbe o inpu s whe e he inpu e minals V 1 , . . . , V n a e coupled o he ga e e minal o he con en ional MOST by n inpu capaci o s C G1 , . . . , C Gn . To gua an ee he DC ope a ion, he high esis ances R MOS1 , . . . , R MOSn a e connec ed in pa allel o each inpu capaci o , as shown in Figu e 3b. The high esis ance RMOS is implemen ed by wo MOSTs (M R ) ope a ing in he cu -o egion as shown in Figu e 3c, which o e s a minimum a ea o chip. I is wo h no ing ha he pseudo- esis o s shun he inpu capaci o s o p ope DC ope a ion o he inpu ansis o ; he e o e, he e a e no loa ing-ga e issues as in he case o he MIFG ansis o . Howe e , o AC ope a ion, he inpu capaci o s c ea e a sho ci cui o he AC signal, he same as in he case o he MIFG echnique. Senso s 2022, 22, x FOR PEER REVIEW 5 o 21 2. P oposed Ci cui 2.1. P oposed Mixed-Mode Uni e sal Fil e The symbol o DDTA is shown in Figu e 1a. The ela ionship o he e minals can be exp essed by 𝑉𝑤=𝑉𝑦1−𝑉𝑦2+𝑉𝑦3 𝐼𝑜=𝐺𝑚𝑉𝑤} (1) I should be no ed ha he ou pu 𝑉𝑤 is he addi ion and sub ac ion o inpu s 𝑉𝑦1, 𝑉𝑦2, and 𝑉𝑦3, while he ou pu 𝐼𝑜 is he cu en ha is con e ed om 𝑉𝑤 by 𝐺𝑚, whe e 𝐺𝑚 is he in e nal ansconduc ance o DDTA. The e o e, DDTA included he DDA as an inpu s age ha se es also as a ansconduc ance ampli ie (TA) as an ou pu s age. Com- pa ed wi h he di e en ial di e ence cu en con eyo ansconduc ance ampli ie (DDCCTA) [60], he DDTA s uc u e employs less MOS ansis o s. Figu e 1b shows he in e nal s uc u e o he p oposed DDTA. The ol age ollowe (VF) ci cui was used o a oid he loading e ec . The e o e, he w- e minal possessed a low-impedance le el ha could be di ec ly connec ed o a low- esis ance ex e nal load. DDTA y1 o Vy1 Io w Vw y3 Vy3 y2 Vy2 + - + - - y1 y2 y3w TA-based DDA VF (a) (b) Rse - - Io Io DDA w' Figu e 1. TA-based DDA: (a) symbol; (b) in e nal s uc u e. The s uc u e o DDTA in [52] was de eloped o he DDTA using MI-MOST as shown in Figu e 2. Figu e 3a shows he MI-MOST symbol wi h n numbe o inpu s whe e he inpu e minals V1, …, Vn a e coupled o he ga e e minal o he con en ional MOST by n inpu capaci o s CG1, …, CGn. To gua an ee he DC ope a ion, he high esis ances RMOS1, …, RMOSn a e connec ed in pa allel o each inpu capaci o , as shown in Figu e 3b. The high esis ance 𝑅𝑀𝑂𝑆 is implemen ed by wo MOSTs (MR) ope a ing in he cu -o egion as shown in Figu e 3c, which o e s a minimum a ea o chip. I is wo h no ing ha he pseudo- esis o s shun he inpu capaci o s o p ope DC ope a ion o he inpu ansis- o ; he e o e, he e a e no loa ing-ga e issues as in he case o he MIFG ansis o . How- e e , o AC ope a ion, he inpu capaci o s c ea e a sho ci cui o he AC signal, he same as in he case o he MIFG echnique. M1 M3 M2 Mb Ib M4M5 M9 RMOS M6 Cc C VDD VSS y1 y3y2 Vb Rse M10 M7 o M11 M8 o IoIoM13 M14 M12 M15 M16 M18 RMOS1 M17 Cc1 C1 Vb w w' Figu e 2. TA-based DDA using MI-MOSTs. Figu e 2. TA-based DDA using MI-MOSTs. I is wo h no ing ha he mul iple inpu echniques a e simply c ea ed by a se o pa allel capaci o s shun ed wi h high- esis ance pseudo- esis o s (M R ). This echnique can be applied o he ga e-, bulk-, ga e-bulk (DTMOS), o bulk-quasi- loa ing-ga e e minals o a s anda d MOS ansis o [61]. In Figu e 2, he ansis o s M 1 –M 6 and M 9 c ea e he DDA co e ci cui . The MI- MOST di e en ial pai s M 1 and M 2 , he ansis o M 3 , and he wo cu en sou ces M 4 Senso s 2022,22, 3535 7 o 21 and M 5 c ea e he di e en ial s age o he DDA. The ansis o M 3 along wi h M 2 and M 5 c ea e a lipped ol age ollowe (FVF) [ 62 ] and i is used o en o ce he cu en o M 3 (i.e., I M3 ) o be equal o he ail cu en , same as in he case o he di e en ial s age o he con en ional s uc u e. The FVF modi ies he ga e o M 3 o ensu e equal d ain cu en s o bo h di e en ial pai s M 1 and M 2 [ 63 ]. Fu he mo e, due o he FVF, he minimum ol age supply is he sum o one ga e-sou ce and one d ain-sou ce ol age (VDD(min)=VGS−M3+VDS−M5). Senso s 2022, 22, x FOR PEER REVIEW 6 o 21 M V1 CG1 Vn MRMOS = MR MR RMOS1 RMOSn S G D V1 Vn (a) (b) (c) CGn Figu e 3. MI-MOST: (a) symbol; (b) ealiza ion; (c) ealiza ion o he la ge esis ance alue. I is wo h no ing ha he mul iple inpu echniques a e simply c ea ed by a se o pa allel capaci o s shun ed wi h high- esis ance pseudo- esis o s (MR). This echnique can be applied o he ga e-, bulk-, ga e-bulk (DTMOS), o bulk-quasi- loa ing-ga e e minals o a s anda d MOS ansis o [61]. In Figu e 2, he ansis o s M1–M6 and M9 c ea e he DDA co e ci cui . The MI-MOST di e en ial pai s M1 and M2, he ansis o M3, and he wo cu en sou ces M4 and M5 c ea e he di e en ial s age o he DDA. The ansis o M3 along wi h M2 and M5 c ea e a lipped ol age ollowe (FVF) [62] and i is used o en o ce he cu en o M3 (i.e., IM3) o be equal o he ail cu en , same as in he case o he di e en ial s age o he con en ional s uc u e. The FVF modi ies he ga e o M3 o ensu e equal d ain cu en s o bo h di e - en ial pai s M1 and M2 [63]. Fu he mo e, due o he FVF, he minimum ol age supply is he sum o one ga e-sou ce and one d ain-sou ce ol age (𝑉𝐷𝐷(min)=𝑉𝐺𝑆−𝑀3+𝑉𝐷𝑆−𝑀5). T ansis o s M6 and M9 o m a supe class AB second s age [64]. The RMOS is espon- sible o he ga e DC biasing o he ansis o M6, whe eas he capaci o C deli e s he AC signal o his ga e. The node 𝑤′ is connec ed o he inpu e minal o M2, c ea ing nega i e eedback o ob aining a uni y-gain ol age ollowe . The DDA s abili y is insu ed by he compensa ion capaci o Cc. The ansis o s M12–M18, RMOS1, and capaci o s Cc1 and C1 a e used o wo k as a ol age ollowe ci cui . The ope a ion is simila o he i s s age o DDTA ha was p e iously explained. The e o e, he ela ionship 𝑉𝑤=𝑉𝑦1−𝑉𝑦2+𝑉𝑦3 (𝑉𝑤=𝑉𝑤′) can be ob ained. The bias cu en 𝐼𝑏 and Mb gene a ed he bias ol age 𝑉𝑏 o M4−M8 and M15−M17. The e minal 𝑤′ is connec ed o a linea adjus able esis o 𝑅𝑠𝑒𝑡 ha con e s he ol age 𝑉𝑤′ o cu en 𝐼𝑤′. This cu en is mi o ed by M7−M10 o he o- e - minals; hus, 𝐼𝑜=𝐼𝑤′ can be achie ed. Addi ional ou pu cu en o- e minals can be ob- ained using complemen a y ansis o s such as M8 and M11. Hence, his pa wo ks as a ansconduc ance ampli ie . The ou pu cu en 𝐼𝑜 is ob ained as 𝑉𝑤′=(𝑉𝑦1−𝑉𝑦2+𝑉𝑦3) (2) 𝐼𝑜=𝑉𝑤′ 𝑅𝑠𝑒𝑡=(𝑉𝑦1−𝑉𝑦2+𝑉𝑦3) 𝑅𝑠𝑒𝑡 (3) 𝐺𝑚𝑠𝑒𝑡=1 𝑅𝑠𝑒𝑡=𝐼𝑜 (𝑉𝑦1−𝑉𝑦2+𝑉𝑦3) (4) No e ha he high linea i y is achie ed due o he linea esis ance Rse . The DDA ope a es in a closed loop, jus o ming a second-gene a ion cu en con eyo , wi h he 𝑤′ ou pu e minal loaded by Rse , and such a con igu a ion can be conside ed as a anscon- duc ance ampli ie . Howe e , he a enua ion o he inpu signal by capaci o s allows en- la ging he inpu common mode ange, as well as he ange o linea ope a ion ( he ange whe e he so-called ha d nonlinea i ies associa ed wi h changing he egion o ope a ion o ansis o s do no appea ). The p oposed mixed-mode uni e sal il e using DDTAs is shown in Figu e 4. I con- sis ed o i e DDTAs and wo g ounded capaci o s. The a ian ans e unc ions could be ob ained by applying he app op ia e inpu signals 𝑉𝑖𝑛1,𝑉𝑖𝑛2,𝐼𝑖𝑛1, and 𝐼𝑖𝑛2 and selec - ing he app op ia e ou pu signals 𝑉𝑜1,𝑉𝑜2,𝑉𝑜3,𝑉𝑜4,𝑉𝑜5,𝐼𝑜1, and 𝐼𝑜2. The inpu ol age Figu e 3. MI-MOST: (a) symbol; (b) ealiza ion; (c) ealiza ion o he la ge esis ance alue. T ansis o s M 6 and M 9 o m a supe class AB second s age [ 64 ]. The RMOS is esponsi- ble o he ga e DC biasing o he ansis o M 6 , whe eas he capaci o C deli e s he AC signal o his ga e. The node w0 is connec ed o he inpu e minal o M 2 , c ea ing nega i e eedback o ob aining a uni y-gain ol age ollowe . The DDA s abili y is insu ed by he compensa ion capaci o C c . The ansis o s M 12 –M 18 , R MOS1 , and capaci o s C c1 and C 1 a e used o wo k as a ol age ollowe ci cui . The ope a ion is simila o he i s s age o DDTA ha was p e iously explained. The e o e, he ela ionship Vw=Vy1−Vy2+Vy3 ( Vw=Vw0 ) can be ob ained. The bias cu en Ib and M b gene a ed he bias ol age Vb o M 4− M 8 and M 15− M 17 . The e minal w0 is connec ed o a linea adjus able esis o Rse ha con e s he ol age Vw0 o cu en Iw0 . This cu en is mi o ed by M 7− M 10 o he o- e minals; hus, Io=Iw0 can be achie ed. Addi ional ou pu cu en o- e minals can be ob ained using complemen a y ansis o s such as M 8 and M 11 . Hence, his pa wo ks as a ansconduc ance ampli ie . The ou pu cu en Iois ob ained as Vw0=Vy1−Vy2+Vy3(2) Io=Vw0 Rse =Vy1−Vy2+Vy3 Rse (3) Gmse =1 Rse =Io Vy1−Vy2+Vy3(4) No e ha he high linea i y is achie ed due o he linea esis ance R se . The DDA ope - a es in a closed loop, jus o ming a second-gene a ion cu en con eyo , wi h he w0 ou pu e minal loaded by R se , and such a con igu a ion can be conside ed as a ansconduc ance ampli ie . Howe e , he a enua ion o he inpu signal by capaci o s allows enla ging he inpu common mode ange, as well as he ange o linea ope a ion ( he ange whe e he so-called ha d nonlinea i ies associa ed wi h changing he egion o ope a ion o ansis o s do no appea ). The p oposed mixed-mode uni e sal il e using DDTAs is shown in Figu e 4. I consis ed o i e DDTAs and wo g ounded capaci o s. The a ian ans e unc ions could be ob ained by applying he app op ia e inpu signals Vin1 , Vin2 , Iin1 , and Iin2 and selec ing he app op ia e ou pu signals Vo1 , Vo2 , Vo3 , Vo4 , Vo5 , Io1 , and Io2 . The inpu ol age which is no used ( Vin = 0) should be a ached o g ound while he inpu cu en which is no used ( Iin = 0) should be loa ed. The Gmse j ( Gmse j = 1 /Rse j ) is he ansconduc ance o Senso s 2022,22, 3535 8 o 21 DDTAj ( j= 1, 2, 3, 4, 5). Using (1) and nodal analysis, he ou pu ol ages and cu en s o he p oposed mixed-mode uni e sal il e can be exp essed by Vo1= Gmse 5(sC2Gmse 2+Gmse 1Gmse 2)Vin1−Gmse 1Gmse 2Gmse 5Vin2 −Gmse 5(sC2+Gmse 1)Iin1−Gmse 1Gmse 2Iin2 D(s)(5) Vo2= Gmse 1Gmse 2Gmse 5Vin1+sC1Gmse 1Gmse 5Vin2 −Gmse 1Gmse 5Iin1+sC1Gmse 1Iin2 D(s)(6) Vo3= sC2Gmse 2Gmse 5Vin1+s2C1C2Gmse 5Vin2 −sC2Gmse 5Iin1+s2C1C2Iin2 D(s)(7) Vo4= Gmse 1Gmse 2Gmse 5Vin1−Gmse 5(s2C1C2+Gmse 1Gmse 2)Vin2 −Gmse 1Gmse 5Iin1−s2C1C2+Gmse 1Gmse 2Iin2 D(s)(8) Vo5= 2Gmse 1Gmse 2Gmse 5Vin1−Gmse 5s2C1C2−sC1Gmse 1+Gmse 1Gmse 2Vin2 −2Gmse 1Gmse 5Iin1−s2C1C2−sC1Gmse 1+Gmse 1Gmse 2Iin2 D(s)(9) Io1= sC2Gmse 1Gmse 2Gmse 5Vin1+s2C1C2Gmse 1Gmse 5Vin2 −sC2Gmse 1Gmse 5Iin1+s2C1C2Gmse 1Iin2 D(s)(10) Io2= Gmse 2Gmse 5s2C1C2+sC1Gmse 1Vin1−sC1Gmse 1Gmse 2Gmse 5Vin2 −Gmse 5s2C1C2+sC1Gmse 1Iin1−sC1Gmse 1Gmse 2Iin2 D(s)(11) Io3= Gmse 1Gmse 2Gmse 3Gmse 5Vin1−Gmse 3Gmse 5s2C1C2+Gmse 1Gmse 2Vin2 −Gmse 1Gmse 3Gmse 5Iin1−Gmse 3s2C1C2+Gmse 1Gmse 2Iin2 D(s)(12) Io4= 2Gmse 1Gmse 2Gmse 4Gmse 5Vin1−Gmse 4Gmse 5s2C1C2−sC1Gmse 1+Gmse 1Gmse 2Vin2 −2Gmse 1Gmse 4Gmse 5Iin1−Gmse 4s2C1C2−sC1Gmse 1+Gmse 1Gmse 2Iin2 D(s)(13) whe e D(s)=s2C1C2Gmse 5+sC1Gmse 1Gmse 5+Gmse 1Gmse 2Gmse 5 . By app op ia ely ap- plying he inpu signals ( Vin1 , Vin2 , Iin1 , and Iin2 ) and choosing he ou pu e minals ( Vo1 , Vo2 , Vo3 , Vo4 , Vo5 , Io1 , Io2 , Io3 , and Io4 ), he VM, CM, TAM, and TIM il e s can be exp essed as in Table 3. I was e iden ha he p oposed il e o e s ou modes o ope a ion in o a single opology. Each mode o ope a ion p o ides i e s anda d il e ing ans e unc ions; hence, a leas wen y ans e unc ions can be ob ained. In addi ion, se e al il e ing unc ions can be ob ained om he same mode o ope a ion; hus, he p oposed opology can p o ide 36 il e ing unc ions. I should be no ed ha some il e ing unc ions o e some ad an ages such as he gain o ans e unc ion when Vin1 is he inpu and Vo5 is he ou pu o LP o he VM il e , he high-Q il e when Vin1=Vin2is he inpu and Vo2is he ou pu o BP o he VM il e , and o e bo h non-in e ing and in e ing il e ing unc ions o HP o TAM il e . The na u al equency ( ωo ) and he quali y ac o ( Q ) o he p oposed il e can be gi en as ωo=sGmse 1Gmse 2 C1C2 (14) Senso s 2022,22, 3535 9 o 21 Q=sC2Gmse 2 C1Gmse 1 (15) F om (14) and (15), he pa ame e ωo can be adjus ed elec onically by Gmse 1 and Gmse 2 whe eas he pa ame e Q can be gi en by C2/C1 by keeping Gmse 1 = Gmse 2 . Thus, he p oposed il e can be elec onically con olled o pa ame e ωo and o hogonally con olled o pa ame e s ωoand Q. Senso s 2022, 22, x FOR PEER REVIEW 8 o 21 DDTA1 y1o w y3 y2o DDTA2 y2o w y3 y1o DDTA3 y1o w y3 y2 DDTA4 y1o w y3 y2 Vo3 Vo5 C2 Io4 Io2 Io3 Io1 Vo4 Vin1 Vin2 Iin2 Vo1 DDTA5 y1o w y3 y2 C1 Iin1 Vo2 Figu e 4. P oposed mixed-mode uni e sal il e using DDTAs. I should be no ed ha some il e ing unc ions o e some ad an ages such as he gain o ans e unc ion when 𝑉𝑖𝑛1 is he inpu and 𝑉𝑜5 is he ou pu o LP o he VM il e , he high-Q il e when 𝑉𝑖𝑛1 = 𝑉𝑖𝑛2 is he inpu and 𝑉𝑜2 is he ou pu o BP o he VM il e , and o e bo h non-in e ing and in e ing il e ing unc ions o HP o TAM il e . The na u al equency (𝜔𝑜) and he quali y ac o (𝑄) o he p oposed il e can be gi en as 𝜔𝑜=√𝐺𝑚𝑠𝑒𝑡1𝐺𝑚𝑠𝑒𝑡2 𝐶1𝐶2 (14) 𝑄=√𝐶2𝐺𝑚𝑠𝑒𝑡2 𝐶1𝐺𝑚𝑠𝑒𝑡1 (15) F om (14) and (15), he pa ame e 𝜔𝑜 can be adjus ed elec onically by 𝐺𝑚𝑠𝑒𝑡1 and 𝐺𝑚𝑠𝑒𝑡2 whe eas he pa ame e 𝑄 can be gi en by 𝐶2/𝐶1 by keeping 𝐺𝑚𝑠𝑒𝑡1 = 𝐺𝑚𝑠𝑒𝑡2. Thus, he p oposed il e can be elec onically con olled o pa ame e 𝜔𝑜 and o hogo- nally con olled o pa ame e s 𝜔𝑜 and 𝑄. I should be no ed ha he e minals 𝑉𝑜3, 𝑉𝑜4, and 𝑉𝑜5 possess low-ou pu imped- ance whe eas he e minals 𝐼𝑜1, 𝐼𝑜2, 𝐼𝑜3, and 𝐼𝑜4 possess a high-ou pu impedance, and hus he loads can be connec ed di ec ly wi hou addi ional bu e ci cui equi emen s. The e minals 𝑉𝑖𝑛1 and 𝑉𝑖𝑛2 possess a high-inpu impedance, hence he condi ion such as 𝑉𝑖𝑛1 = 𝑉𝑖𝑛2 is no equi ed o addi ional bu e ci cui s. Howe e , he e minals 𝑉𝑜1 and 𝑉𝑜2 do no p o ide a low-ou pu impedance and he e minals 𝐼𝑖𝑛1 and 𝐼𝑖𝑛2 do no p o ide a low-inpu impedance; he e o e, he bu e ci cui s may be equi ed i low-im- pedance loads a e connec ed and i low-impedance cu en signals a e supplied. In he case o CM and TIM il e s, he ma ching condi ion is absen and in he case o VM and TAM, he in e ing- ype inpu is no used. 2.2. Non-Ideali y Analysis Conside ing non-ideali ies o DDTA, (1) can be ew i en as Figu e 4. P oposed mixed-mode uni e sal il e using DDTAs. I should be no ed ha he e minals Vo3 , Vo4 , and Vo5 possess low-ou pu impedance whe eas he e minals Io1 , Io2 , Io3 , and Io4 possess a high-ou pu impedance, and hus he loads can be connec ed di ec ly wi hou addi ional bu e ci cui equi emen s. The e minals Vin1 and Vin2 possess a high-inpu impedance, hence he condi ion such as Vin1=Vin2 is no equi ed o addi ional bu e ci cui s. Howe e , he e minals Vo1 and Vo2 do no p o ide a low-ou pu impedance and he e minals Iin1 and Iin2 do no p o ide a low-inpu impedance; he e o e, he bu e ci cui s may be equi ed i low-impedance loads a e connec ed and i low-impedance cu en signals a e supplied. In he case o CM and TIM il e s, he ma ching condi ion is absen and in he case o VM and TAM, he in e ing- ype inpu is no used. 2.2. Non-Ideali y Analysis Conside ing non-ideali ies o DDTA, (1) can be ew i en as Vw=βj1Vy1−βj2Vy2+βj3Vy3 Io=Gmse njVw(16) whe e βj1= 1 −εj1 and εj1 (εj1  1) deno e he ol age acking e o om Vy1 o Vw o j - h DDTA, βj2= 1 −εj2 and εj2 (εj2  1) deno e he ol age acking e o om Vy2 o Vw o j - h DDTA and βj3= 1 −εj3 and εj3 (εj3  1) deno e he ol age acking e o om Vy2 o Vwo j- h DDTA. The non-ideal ansconduc ance gain Gmse nj is gi en by Gmse nj(s)= ωgmj s+ωgmj !Gmse j (17) Senso s 2022,22, 3535 16 o 21 Senso s 2022, 22, x FOR PEER REVIEW 15 o 21 The VM il e was used o es i s empe a u e pe o mance. The simula ed magni- ude equency esponses o he LP, BP, HP, BS, and AP il e when he empe a u e was a ied om −10 o 70 °C a e shown in Figu e 14 . The p oposed il e was also in es iga ed using a Mon e Ca lo analysis by assuming ha he luc ua ion o he na u al equency changes caused by de ia ion o he capaci o s and he h eshold ol age o he MOS an- sis o . The BP esponse o he VM il e was simula ed by se ing 5% ole ances o he capaci o s C1 and C2 and 5% a ia ions o he ansis o h eshold ol age a 1.04 kHz, Q ≅ 1, and 200 Gaussian dis ibu ion uns. Figu e 15 shows he de i ed his og am o he na u al equency which exp essed ha he s anda d de ia ion (σ) o o was 33.339 Hz and he maximal and minimal alues o o we e 1.132 kHz and 0.967 kHz, espec i ely. -60 -50 -40 -30 -20 -10 0 10 Magni ude, dB 1.0 10 100 1.0k 10k 100k 1.0M F equency, Hz Temp. = -10 o 70 ºC Figu e 14. The simula ed magni ude equency esponses o he uni e sal il e wi h empe a u e a ia ion. F equency [kHz] 0.950 0.975 1.000 1.025 1.050 1.075 1.100 1.125 1.150 0 5 10 15 20 25 30 n samples = 200 n di isions = 10 mean = 1039.89 sigma = 33.3392 minimum = 967.449 10 h % = 998.841 median = 1037.94 90 h % = 1084.83 maximum = 1132.88 Pe cen o Samples Figu e 15. The his og am o he cu o equency o he uni e sal il e wi h 200 uns o MC analysis. Figu e 15. The his og am o he cu o equency o he uni e sal il e wi h 200 uns o MC analysis. 3.2. Expe imen al Resul s The p oposed mixed-mode uni e sal il e was also es ed expe imen ally o con i m i s unc ionali y. The simula ion esul s based on he mac o model and he measu ed esul s a e included o compa ison. The DDTA was ealized using OTAs as shown in Figu e 16 [ 52 ]. The p o o ype ci cui was ealized using comme cially a ailable in eg a ed ci cui LM13700N ha consis s o wo cu en -con olled ansconduc ance ampli ie s. No e he bene i o he MI-MOST on he TA-based DDA in Figu e 2in simpli ying he CMOS s uc u e and educing he numbe o ICs needed o build he il e applica ion. Fo ins ance, o c ea e he mul iple inpu (y 1 , y 2 , and y 3 ) o he DDA in Figu e 16, wo ansconduc ance ampli ie s (OTA 1 , OTA 2 ) a e needed and ano he wo OTAs a e needed o cons uc he TA, hence wo LM13700Ns a e needed o each DDTA. Senso s 2022, 22, x FOR PEER REVIEW 16 o 21 3.2. Expe imen al Resul s The p oposed mixed-mode uni e sal il e was also es ed expe imen ally o con i m i s unc ionali y. The simula ion esul s based on he mac o model and he measu ed e- sul s a e included o compa ison. The DDTA was ealized using OTAs as shown in Fig- u e 16 [52]. The p o o ype ci cui was ealized using comme cially a ailable in eg a ed ci cui LM13700N ha consis s o wo cu en -con olled ansconduc ance ampli ie s. No e he bene i o he MI-MOST on he TA-based DDA in Figu e 2 in simpli ying he CMOS s uc u e and educing he numbe o ICs needed o build he il e applica ion. Fo ins ance, o c ea e he mul iple inpu (y1, y2, and y3) o he DDA in Figu e 16, wo ansconduc ance ampli ie s (OTA1, OTA2) a e needed and ano he wo OTAs a e needed o cons uc he TA, hence wo LM13700Ns a e needed o each DDTA. OTA1 OTA2 y1gmo DDA y2 y3 w gm TA o Figu e 16. OTA-based DDTA [52]. Fo measu emen se up, he supply ol age was ±5 V and he capaci ances C1 and C2 we e 220 nF. The Agilen Technology DSOX 1102G oscilloscope was used o supplying he sinusoidal inpu signal and measu ing he ou pu wa e o ms. The ansconduc ances 𝑔𝑚1 = 𝑔𝑚2 = 𝑔𝑚3 = 𝑔𝑚4 = 𝑔𝑚5 = 1.51 mS we e designed o ob ain he mixed-mode il e wi h he na u al equency o 1.09 kHz and he quali y ac o o 1 (𝑄 ≅ 1). Figu es 17a, 18a, 19a and 20a show he expe imen al equency esponses o he LP, HP, BP, and BS esponses o he VM, CM, TAM, and TIM il e s, espec i ely. Figu es 17b, 18b, 19b and 20b show he expe imen al equency esponse o magni ude and phase cha ac e is ics o he AP esponses o he VM, CM, TAM, and TIM il e s, espec i ely. To measu e he e- quency esponses o TAM il e , a esis o was used o con e he ou pu cu en o ol - age, and he ol age acco ding o his esis ance was calcula ed o he ou pu cu en o plo ing. In case o CM and TIM il e s, he high esis ances (i.e., 𝑅𝑖𝑛 ≫ 662 Ω) we e used o con e he inpu ol age o he inpu cu en a inpu e minals and con e he ou pu cu en o he ou pu ol age ou pu e minals. The ol age acco ding o he esis ances was calcula ed as cu en s o plo ing. Figu e 16. OTA-based DDTA [52]. Fo measu emen se up, he supply ol age was ± 5 V and he capaci ances C 1 and C 2 we e 220 nF. The Agilen Technology DSOX 1102G oscilloscope was used o supplying he sinusoidal inpu signal and measu ing he ou pu wa e o ms. The ansconduc ances gm1=gm2=gm3=gm4=gm5= 1.51 mS we e designed o ob ain he mixed-mode il e wi h he na u al equency o 1.09 kHz and he quali y ac o o 1 ( Q∼ = 1). Figu es 17a, 18a, 19a and 20a show he expe imen al equency esponses o he LP, HP, BP, and BS esponses o he VM, CM, TAM, and TIM il e s, espec i ely. Figu es 17b, 18b, 19b and 20b show he expe imen- al equency esponse o magni ude and phase cha ac e is ics o he AP esponses o he Senso s 2022,22, 3535 17 o 21 VM, CM, TAM, and TIM il e s, espec i ely. To measu e he equency esponses o TAM il e , a esis o was used o con e he ou pu cu en o ol age, and he ol age acco ding o his esis ance was calcula ed o he ou pu cu en o plo ing. In case o CM and TIM il e s, he high esis ances (i.e., Rin  662 Ω ) we e used o con e he inpu ol age o he inpu cu en a inpu e minals and con e he ou pu cu en o he ou pu ol age ou pu e minals. The ol age acco ding o he esis ances was calcula ed as cu en s o plo ing. Senso s 2022, 22, x FOR PEER REVIEW 17 o 21 (a) (b) Figu e 17. Expe imen al equency esponses o he VM il e : (a) LP, BP, HP, BS il e s; (b) AP il- e . (a) (b) Figu e 18. Expe imen al equency esponses o he CM il e : (a) LP, BP, HP, BS il e s; (b) AP il- e . -60 -50 -40 -30 -20 -10 0 10 1 100 10000 1000000 Magni ude [dB] F equency [Hz] LP (Exp) LP (Sim) HP (Exp) HP (Sim) BP (Exp) BP (Sim) BS (Exp) BS (Sim) -240 -180 -120 -60 0 60 120 180 240 -40 -30 -20 -10 0 10 20 30 40 1 100 10000 1000000 Phase [º] Magni ude [dB] F equency [Hz] Magni ude (Exp) Magni ude (Sim) Phase (Exp) Phase (Sim) -60 -50 -40 -30 -20 -10 0 10 1 10 100 1000 10000 100000 1000000 Magni ude [dB] F equency [Hz] LP [Exp] LP [Sim] HP [Exp] HP [Sim] BP [Exp] BP [Sim] BS [Exp] BS [Sim] -240 -180 -120 -60 0 60 120 180 240 -40 -30 -20 -10 0 10 20 30 40 1 100 10000 1000000 Phase [] Magni ude [dB] F equency [Hz] Magni ude [Exp] Magni ude [Sim] Phase [Exp] Phase [Sim] Figu e 17. Expe imen al equency esponses o he VM il e : (a) LP, BP, HP, BS il e s; (b) AP il e . Senso s 2022, 22, x FOR PEER REVIEW 17 o 21 (a) (b) Figu e 17. Expe imen al equency esponses o he VM il e : (a) LP, BP, HP, BS il e s; (b) AP il- e . (a) (b) Figu e 18. Expe imen al equency esponses o he CM il e : (a) LP, BP, HP, BS il e s; (b) AP il- e . -60 -50 -40 -30 -20 -10 0 10 1 100 10000 1000000 Magni ude [dB] F equency [Hz] LP (Exp) LP (Sim) HP (Exp) HP (Sim) BP (Exp) BP (Sim) BS (Exp) BS (Sim) -240 -180 -120 -60 0 60 120 180 240 -40 -30 -20 -10 0 10 20 30 40 1 100 10000 1000000 Phase [º] Magni ude [dB] F equency [Hz] Magni ude (Exp) Magni ude (Sim) Phase (Exp) Phase (Sim) -60 -50 -40 -30 -20 -10 0 10 1 10 100 1000 10000 100000 1000000 Magni ude [dB] F equency [Hz] LP [Exp] LP [Sim] HP [Exp] HP [Sim] BP [Exp] BP [Sim] BS [Exp] BS [Sim] -240 -180 -120 -60 0 60 120 180 240 -40 -30 -20 -10 0 10 20 30 40 1 100 10000 1000000 Phase [] Magni ude [dB] F equency [Hz] Magni ude [Exp] Magni ude [Sim] Phase [Exp] Phase [Sim] Figu e 18. Expe imen al equency esponses o he CM il e : (a) LP, BP, HP, BS il e s; (b) AP il e . The expe imen al equency esponses o he BP esponse o he VM il e wi h di e en ansconduc ances ( gm = 0.48 mS, 0.87 mS, 1.51 mS, and 2.93 mS) a e shown in Figu e 21. This esul was used o con i m ha he p oposed mixed-mode il e p o ides an elec onic uning abili y wi hou d ubbing he quali y ac o . The Expe imen al se up o he uni e sal il e is shown in Figu e S1 in he Supplemen a y Ma e ials. Senso s 2022,22, 3535 18 o 21 Senso s 2022, 22, x FOR PEER REVIEW 18 o 21 (a) (b) Figu e 19. Expe imen al equency esponses o he TAM il e : (a) LP, BP, HP, BS il e s; (b) AP il- e . (a) (b) Figu e 20. Expe imen al equency esponses o he TIM il e : (a) LP, BP, HP, BS il e s; (b) AP il e . The expe imen al equency esponses o he BP esponse o he VM il e wi h di - e en ansconduc ances (𝑔𝑚 = 0.48 mS, 0.87 mS, 1.51 mS, and 2.93 mS) a e shown in Fig- u e 21. This esul was used o con i m ha he p oposed mixed-mode il e p o ides an elec onic uning abili y wi hou d ubbing he quali y ac o . The Expe imen al se up o he uni e sal il e is shown in Figu e S1 in he Supplemen a y Ma e ials. -120 -110 -100 -90 -80 -70 -60 -50 1 100 10000 1000000 Magni ude [dB] F equency [Hz] LP (Exp) LP (Sim) HP (Exp) HP (Sim) BP (Exp) BP (Sim) BS (Exp) BS (Sim) -240 -180 -120 -60 0 60 120 180 240 -100 -90 -80 -70 -60 -50 -40 -30 -20 1 100 10000 1000000 Phase [º] Magni ude [dB] F equency [Hz] Magni ude [Exp] Magni ude [Sim] Phase [Exp] Phase [Sim] 0 10 20 30 40 50 60 70 1 10 100 1000 10000 100000 1000000 F equency [Hz] F equency [Hz] LP [Exp] LP [Sim] HP [Exp] HP [Sim] BP [Exp] BP [Sim] BS [Exp] BS [Sim] -240 -180 -120 -60 0 60 120 180 240 20 30 40 50 60 70 80 90 1 100 10000 1000000 Phase [º] Magni ude [dB] F equency [Hz] Magni ude [Exp] Magni ude [Sim] Phase [Exp] Phase [Sim] Figu e 19. Expe imen al equency esponses o he TAM il e : ( a ) LP, BP, HP, BS il e s; ( b ) AP il e . Senso s 2022, 22, x FOR PEER REVIEW 18 o 21 (a) (b) Figu e 19. Expe imen al equency esponses o he TAM il e : (a) LP, BP, HP, BS il e s; (b) AP il- e . (a) (b) Figu e 20. Expe imen al equency esponses o he TIM il e : (a) LP, BP, HP, BS il e s; (b) AP il e . The expe imen al equency esponses o he BP esponse o he VM il e wi h di - e en ansconduc ances (𝑔𝑚 = 0.48 mS, 0.87 mS, 1.51 mS, and 2.93 mS) a e shown in Fig- u e 21. This esul was used o con i m ha he p oposed mixed-mode il e p o ides an elec onic uning abili y wi hou d ubbing he quali y ac o . The Expe imen al se up o he uni e sal il e is shown in Figu e S1 in he Supplemen a y Ma e ials. -120 -110 -100 -90 -80 -70 -60 -50 1 100 10000 1000000 Magni ude [dB] F equency [Hz] LP (Exp) LP (Sim) HP (Exp) HP (Sim) BP (Exp) BP (Sim) BS (Exp) BS (Sim) -240 -180 -120 -60 0 60 120 180 240 -100 -90 -80 -70 -60 -50 -40 -30 -20 1 100 10000 1000000 Phase [º] Magni ude [dB] F equency [Hz] Magni ude [Exp] Magni ude [Sim] Phase [Exp] Phase [Sim] 0 10 20 30 40 50 60 70 1 10 100 1000 10000 100000 1000000 F equency [Hz] F equency [Hz] LP [Exp] LP [Sim] HP [Exp] HP [Sim] BP [Exp] BP [Sim] BS [Exp] BS [Sim] -240 -180 -120 -60 0 60 120 180 240 20 30 40 50 60 70 80 90 1 100 10000 1000000 Phase [º] Magni ude [dB] F equency [Hz] Magni ude [Exp] Magni ude [Sim] Phase [Exp] Phase [Sim] Figu e 20. Expe imen al equency esponses o he TIM il e : ( a ) LP, BP, HP, BS il e s; ( b ) AP il e . Senso s 2022, 22, x FOR PEER REVIEW 19 o 21 Figu e 21. The expe imen al equency esponses o he BP esponse o he VM il e wi h di e en ansconduc ances. 4. Conclusions A new mixed-mode uni e sal il e using i e DDTAs and wo g ounded capaci o s was shown in his pape . The p oposed il e o e s 36 il e ing esponses in o a single opology using he DDTA-based ci cui . The na u al equency and he quali y ac o can be se o hogonally and elec onically con olled. The pe o mance o he p oposed il e was e alua ed in PSPICE simula ion using he TSMC 0.18 µm CMOS echnology and in- es iga ed by expe imen es s using LM13600 disc e e componen in eg a ed ci cui as DDTAs. The simula ion esul s we e in ag eemen wi h he expe imen al esul s. Supplemen a y Ma e ials: The ollowing suppo ing in o ma ion can be downloaded a : www.mdpi.com/xxx/s1, Figu e S1: Expe imen al se up o he uni e sal il e . Au ho Con ibu ions: Concep ualiza ion, F.K. and M.K.; me hodology, M.K. and T.K.; so wa e, M.K. and P.S.; expe men a ion, F.K.; alida ion, F.K., P.S. and M.K.; o mal analysis, M.K. and T.K.; in es iga ion, F.K., M.K. and T.K.; w i ing—o iginal d a p epa a ion, M.K. and F.K.; w i ing— e- iew and edi ing, M.K., F.K. and T.K. All au ho s ha e ead and ag eed o he published e sion o he manusc ip . Funding: This wo k was suppo ed by King Mongku ’s Ins i u e o Technology Ladk abang unde G an KREF026201, and by he Uni e si y o De ence B no wi hin he O ganiza ion De elopmen P ojec VAROPS. Con lic s o In e es : The au ho s decla e no con lic o in e es . Re e ences 1. Wang, S.-F.; Chen, H.-P.; Ku, Y.; Le, C.-L. Ve sa ile ol age-modde biquad a ic il e and quad a u e oscilla o using ou OTAs and wo g ounded capaci o s. Elec onics 2020, 9, 1493. 2. Alexande , C.K.; Sadiku, M.N.O. Fundamen als o Elec ic Ci cui s, 6 h ed.; McG aw-Hill: New Yo k, NY, USA, 2017; pp. 658–660. 3. Li, Y. A modi ied CDTA (MCDTA) and i s applica ions: Designing Cu en -Mode Six h-O de Ellip ic Band-Pass Fil e . Ci cui s Sys . Signal P ocess. 2011, 30, 1383–1390. 4. MAX260 Maxim In eg a ed. A ailable online: h ps://www.maximin eg a ed.com/en/p oduc s/analog/analog- il- e s/MAX260.h ml (accessed on 5 Janua y 2022). 5. Psychalinos, C.; Kasimis, C.; Kha eb, F. Mul iple-inpu single-ou pu uni e sal biquad il e using single ou pu ope a ional ansconduc ance ampli ie s. In . J. Elec on. Commun. 2018, 93, 360–367. 6. Wang, S.-F.; Chen, H.-P.; Ku, Y.; Yang, C.-M. Independen ly unable ol age-mode OTA-C biquad a ic il e wi h i e inpu s and h ee ou pu s and i s ully-uncoupled quad a u e sinusoidal oscilla o applica ion. AEU In . J. Elec on. Commun. 2019, 110, 152822. -60 -50 -40 -30 -20 -10 0 10 1 10 100 1000 10000 100000 1000000 Magni ude [dB] F equency [Hz] gm=0.48mS (Exp) gm=0.48mS (Sim) gm=0.87mS (Exp) gm=0.87mS (Sim) gm=1.51mS (Exp) gm=1.51mS (Sim) gm=2.93mS (Exp) gm=2.93mS (Sim) Figu e 21. The expe imen al equency esponses o he BP esponse o he VM il e wi h di e en ansconduc ances. Senso s 2022,22, 3535 19 o 21 4. Conclusions A new mixed-mode uni e sal il e using i e DDTAs and wo g ounded capaci o s was shown in his pape . The p oposed il e o e s 36 il e ing esponses in o a single opology using he DDTA-based ci cui . The na u al equency and he quali y ac o can be se o hogonally and elec onically con olled. The pe o mance o he p oposed il e was e alua ed in PSPICE simula ion using he TSMC 0.18 µ m CMOS echnology and in es iga ed by expe imen es s using LM13600 disc e e componen in eg a ed ci cui as DDTAs. The simula ion esul s we e in ag eemen wi h he expe imen al esul s. Supplemen a y Ma e ials: The ollowing suppo ing in o ma ion can be downloaded a : h ps:// www.mdpi.com/a icle/10.3390/s22093535/s1, Figu e S1: Expe imen al se up o he uni e sal il e . Au ho Con ibu ions: Concep ualiza ion, F.K. and M.K.; me hodology, M.K. and T.K.; so wa e, M.K. and P.S.; expe men a ion, F.K.; alida ion, F.K., P.S. and M.K.; o mal analysis, M.K. and T.K.; in es iga ion, F.K., M.K. and T.K.; w i ing—o iginal d a p epa a ion, M.K. and F.K.; w i ing— e iew and edi ing, M.K., F.K. and T.K. All au ho s ha e ead and ag eed o he published e sion o he manusc ip . Funding: This wo k was suppo ed by King Mongku ’s Ins i u e o Technology Ladk abang unde G an KREF026201, and by he Uni e si y o De ence B no wi hin he O ganiza ion De elopmen P ojec VAROPS. Con lic s o In e es : The au ho s decla e no con lic o in e es . Re e ences 1. Wang, S.-F.; Chen, H.-P.; Ku, Y.; Le, C.-L. Ve sa ile ol age-modde biquad a ic il e and quad a u e oscilla o using ou OTAs and wo g ounded capaci o s. Elec onics 2020,9, 1493. [C ossRe ] 2. Alexande , C.K.; Sadiku, M.N.O. Fundamen als o Elec ic Ci cui s, 6 h ed.; McG aw-Hill: New Yo k, NY, USA, 2017; pp. 658–660. 3. Li, Y. 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