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Depositing Molecular Graphene Nanoribbons on Ag(111) by Electrospray Controlled Ion Beam Deposition: Self-Assembly and On-Surface Transformations

Author: Ran, Wei,Walz, Andreas,Stoiber, Karolina,Knecht, Peter,Xu, Hongxiang,Papageorgiou, Anthoula C.,Huettig, Annette,Cortizo Lacalle, Diego,Mora Fuentes, Juan Pedro,Mateo Alonso, Aurelio,Schlichting, Hartmut,Reichert, Joachim
Publisher: Wiley
Year: 2022
DOI: 10.1002/anie.202111816
Source: https://addi.ehu.eus/bitstream/10810/57801/1/Angew%20Chem%20Int%20Ed%20-%202022%20-%20Ran%20-%20Depositing%20Molecular%20Graphene%20Nanoribbons%20on%20Ag%20111%20by%20Electrospray%20Controlled%20Ion%20Beam.pdf
Su ace Chemis y
Deposi ing Molecula G aphene Nano ibbons on Ag(111) by
Elec osp ay Con olled Ion Beam Deposi ion: Sel -Assembly and
On-Su ace T ans o ma ions
Wei Ran, And eas Walz, Ka olina S oibe , Pe e Knech , Hongxiang Xu,
An houla C. Papageo giou,* Anne e Hue ig, Diego Co izo-Lacalle, Juan P. Mo a-Fuen es,
Au elio Ma eo-Alonso, Ha mu Schlich ing, Joachim Reiche ,* and Johannes V. Ba h*
Abs ac : The chemical p ocessing o low-dimensional
ca bon nanos uc u es is c ucial o hei in eg a ion in
u u e de ices. He e we apply a new me hodology in
a omically p ecise enginee ing by combining mul is ep
solu ion syn hesis o N-doped molecula g aphene nano-
ibbons (GNRs) wi h mass-selec ed ul a-high acuum
elec osp ay con olled ion beam deposi ion on su aces
and eal-space isualisa ion by scanning unnelling
mic oscopy. We demons a e how his me hod yields
solely a con ollable amoun o single, o he wise unsu-
blimable, GNRs o 2.9 nm leng h on a plana Ag(111)
su ace. This me hodology allows o u he p ocessing
by employing on-su ace syn hesis p o ocols and exploi -
ing he eac i i y o he subs a e. Following mul iple
chemical ans o ma ions, he GNRs p o ide eac i e
building blocks o o m ex ended, me al–o ganic coo di-
na ion polyme s.
In oduc ion
G aphene as well as o he 2D shee ma e ials a e ex emely
p omising o inno a i e o ganic nano-scale elec onics.
Howe e , geome ically and chemically ailo ed de i a i es
a e necessa y o ealize he en isioned ci cui s and ma e ials
o be employed in he mally and elec ically conduc ing
elemen s, senso s, anspa en elec odes o displays, sola
cells, ca alys s, elec odes o ba e ies and uel cells, and
o ganic ield-e ec ansis o s.[1] These include g aphene
nano ibbons (GNRs): a class o ma e ials whose elec onic,
op ical and mechanical p ope ies p esen signi ican appli-
ca ion po en ial in elec onics,[1c,2] pho onics,[3] and ene gy
s o age[4] and con e sion.[5] S uc u al modi ica ions o
con ol he semiconduc ing p ope ies a e achie ed by
limi ing he dimensions o na ow s ips, by designing edge
s uc u es, h ough doping he co e o edges wi h he e -
oa oms, o by in oducing he e ojunc ions.[5a,6]
The physical p ope ies o GNRs depend on he wid h,
leng h, edge s uc u e and doping loci, which makes syn-
hesis wi h a omic p ecision c ucial. Se e al op-down
s a egies including slicing o e ching o g aphene, cu ing,
oxida ion, in e cala ion, plasma e ching o nano ubes and
sonica ion o shee s equen ly ail in his espec : he
achie ed geome ies a e oo la ge, hei nanos uc u es
poo ly de ined, wi hou a omic p ecision. Thus, al e na i e
bo om-up solu ion[7] and on-su ace[8] syn hesis app oaches
we e in oked, since hey can p o ide con ol o e all he
s uc u al pa ame e s ha de e mine he GNR p ope ies.
On-su ace syn hesis ypically equi es a sublima ion p oce-
du e o con olled su ace deposi ion o he mally obus
p ecu so s unde ul a-high acuum (UHV) condi ions.
Non-UHV s a egies o deposi he eac an s on a gi en
subs a e, like spin coa ing, ink-je p in ing, d op-cas ing,
elec osp ay o chemical ba h deposi ion ypically do no
mee he necessa y pu i y equi emen s on an a omic scale
and hus well-de ined molecula laye s a e elusi e. By
deposi ing ailo ed molecules on well-de ined in e aces in
acuum, no el, in ica e s uc u es and de ice elemen s
come in each. Howe e , es ablished deposi ion me hod-
ologies wi h a omic inesse (e.g. o ganic molecula beam
epi axy) a e cu en ly limi ed o he mos able sublimable
molecules, whence a ple ho a o o ganic and almos all
biomolecules wi h hei ascina ing p ope ies a e excluded.
Such limi a ions can be o e come by deposi ion sys ems
using elec osp ay ionisa ion unde UHV.[9] This allows o
ul a-pu e laye s o so -landed and he e o e in eg i y-
p ese ed species, a p e equisi e o sophis ica ed high-le el
[*] D . W. Ran, D . A. Walz, D . K. S oibe , D . P. Knech , H. Xu,
D . A. C. Papageo giou, D . A. Hue ig, D . H. Schlich ing,
D . J. Reiche , P o . D . J. V. Ba h
Physics Depa men E20, Technical Uni e si y o Munich,
James F anck S aße 1, 85748 Ga ching (Ge many)
E-mail: [email p o ec ed]
[email p o ec ed]
[email p o ec ed]
D . D. Co izo-Lacalle, J. P. Mo a-Fuen es, P o . D . A. Ma eo-Alonso
POLYMAT, Uni e si y o he Basque Coun y UPV/EHU, A enida de
Tolosa 72, 20018 Donos ia-San Sebas ian (Spain)
P o . D . A. Ma eo-Alonso
Ike basque, Basque Founda ion o Science,
Bilbao (Spain)
© 2022 The Au ho s. Angewand e Chemie In e na ional Edi ion
published by Wiley-VCH GmbH. This is an open access a icle unde
he e ms o he C ea i e Commons A ibu ion License, which
pe mi s use, dis ibu ion and ep oduc ion in any medium, p o ided
he o iginal wo k is p ope ly ci ed.
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How o ci e: Angew. Chem. In . Ed. 2022, 61, e202111816
In e na ional Edi ion: doi.o g/10.1002/anie.202111816
Ge man Edi ion: doi.o g/10.1002/ange.202111816
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nano-scale ma e ial design and cha ac e iza ion.[10] Li e a-
u e p o ides many examples including biologically ele an
molecules ((poly)saccha ides,[9b,11] pep ides,[12] p o eins,[13]
DNA),[9c,14] o ganic molecules,[15] nano-clus e s,[9a,16] and cage
complexes.[17] Fo his pu pose and inspi ed by p e ious
achie emen s, we ha e de eloped a sys em wi h inno a i e
ea u es, designa ed elec osp ay con olled ion beam depo-
si ion (ES-CIBD), ha p ocesses eadily dissol able species
including he molabile and agile en i ies like mos o ganic
and biological molecules.[14] Ou ES-CIBD appa a us p o-
ides a p epa a i e ool using digi al ion-guiding and mass-
spec ome y elemen s o ans e sol a ed molecules unde
ambien condi ions on o well-de ined su aces unde UHV
condi ions wi h mass-selec i i y and uneable ene gy.
He ein, we demons a e he clean deposi ion o complex,
molecula GNRs, p esen ing a signi ican ad ancemen
beyond simple elec osp ay ionisa ion deposi ion o such
g aphene-based mac omolecules.[18] Once on he su ace, we
u he employ an on-su ace syn hesis me hodology,[19]
which may a o d polyme s ia su ace assis ed eac ions
igge ed by he mal annealing.[20] The GNR species em-
ployed exhibi s mul iple unc ional g oups, some o which
a e known o be qui e labile (e.g. ace als and silyl, Fig-
u e 1b). These unc ional g oups a e in oduced o ul il
se e al eac i i y and solubili y equi emen s o solu ion
syn hesis. Despi e hese moie ies’ labili y and he size o he
GNR backbone, he en i e species is deposi able, wi hou
any e idence o hype he mally induced
Figu e 1. Elec osp aying ollowed by con olled ion beam deposi ion o NR-10. a) Ions p oduced ia elec osp ay ionisa ion om a solu ion a e
ans e ed o ul a-high acuum by a ious ion guides in se e al p essu e s ages whe e neu al sol en molecules a e emo ed. Ionic impu i ies
a e elimina ed by a subsequen digi al quad upole mass spec ome e , which selec s he a ge ions acco ding o m/z. Fo so -landing, hese ions
a e deposi ed on a su ace wi h low kine ic ene gy ( ypically below 10 eV/z). The sample can be u he in es iga ed by a scanning unnelling
mic oscope. b) Chemical s uc u e o NR-10 (C148H190N8O8Si4). c) Mass spec um o NR-10 in THF solu ion. The main in ensi y a app oxima ely
1162 Th o igina es om he doubly cha ged monome . The ion beam was pu i ied wi h he dQMS acco ding o he deposi ion window ma ked by
he shaded ec angle o exclusi ely deposi he NR-10 a ibu ed ions.
Figu e 2. STM imaging o NR-10 on Ag(111). a) Su ace o e iew in long ange mic og aph (111 K, 1.76 V, 0.15 nA). b) Magni ied iew o sel -
assembled island (160 K, 2.1 V, 0.12 nA). c) C opped image o iden i ied single molecule, o e laid wi h NR-10 molecula model. C, N, O, Si and H
a e depic ed in black, blue, ed, pu ple and whi e, espec i ely.
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mechanochemis y,[21] gi ing ise o well-o de ed, sel -
assembled s uc u es on he Ag(111) su ace as shown by
scanning unnelling mic oscopy (STM) in es iga ions. Sim-
ila ly o he p o ec ion and dep o ec ion schemes used in
solu ion syn hesis, on he sil e su ace, he silyl solubilizing
g oups can be di ec ly clea ed and he ace als can be
ans o med in o he co esponding diones, enabling he
o ma ion o me al-o ganic coo dina ion polyme s. The
s epwise con e sion and polyme isa ion scheme o he small
GNR is cha ac e ised by analysis o high- esolu ion STM
images.
Resul s and Discussion
We employed a molecula N-doped conjuga ed polya o-
ma ic species, which is ob ained by mul is ep o ganic
syn hesis in solu ion.[7i] The molecule unde in es iga ion is a
linea nano ibbon wi h 10 conjuga ed linea ly used ings
(NR-10, Figu e 1b), a molecula mass o 2321.54 Da (calcu-
la ed om he iso opic composi ion and in ull ag eemen
wi h li e a u e)[7i] and a leng h o 2.9 nm.
The a omically clean deposi ion o non- ola ile mole-
cules in UHV is pe o med by ES-CIBD (schema ic shown
in Figu e 1a).[22] S a ing om a sample solu ion wi h
dissol ed analy e molecules, a beam o gas-phase ions is
gene a ed ia elec osp ay ionisa ion. T ans e ion guides
conduc he ion beam om he ambien condi ions o he
sp ay o UHV and a digi al quad upole mass spec ome e
(dQMS). He e, he beam ge s ei he analysed o i s
composi ion o il e ed acco ding o m/z o subsequen
deposi ion. The dQMS exclusi ely ansmi s a small window
o m/z alues wi h adjus able wid h and posi ion while all
o he ions a e emo ed om he beam. Finally, so -landing
o ions wi h low kine ic ene gies yields in ac molecules on
he sample su ace, whe e he co e age is con olled by he
inciden ion beam in ensi y. The combina ion wi h a a iable
empe a u e UHV-STM and an in si u ans e sys em
allows o in es iga ion and u he manipula ion o he
deposi ed laye s. The subsequen STM cha ac e isa ion
showed ha high-pu i y deposi ions we e achie ed.
Posi i e-mode elec osp ay o he NR-10 molecules
dissol ed in an acidi ied THF/wa e mix u e (c . Me hods)
esul ed in he mass spec um depic ed in Figu e 1c. The
doubly cha ged monome a a ound 1162 Th is he dominan
ion species and he e o e was selec ed o all deposi ions.
So -landing was pe o med wi h �2 eV/zkine ic ene gy pe
molecule (�4 eV a z=2) on he Ag(111) su ace held a
oom empe a u e.
The samples we e subsequen ly examined by STM.
Annealing o empe a u es up o 423 K a ec ed nei he he
single molecule appea ance no he long- ange o de .
Exempla y da a a e shown in Figu e 2. In gene al, on
a omically plana Ag(111) e aces we ound molecula
islands su ounded by di using molecules (see high con as
and s eaking obse ed ou side he molecula island) as
shown in Figu e 2a. Zooming in such an island allows o
iden i y he sel -assembly as a egula s uc u e which can be
desc ibed by he epi axial ma ix 10 15
43
!(Figu e 2b).
This a angemen is p esumably media ed by an-de -Waals
Figu e 3. On-su ace double dep o ec ion o NR-10. a) O e iew STM
image (130 K, 1.25 V, 0.09 nA) o NR-10 on Ag(111) a e annealing a
503 K. b) Magni ica ion o he a ea indica ed in (a) o e laid wi h
p oposed molecula model o NR-10’. C, N, O and H a e depic ed in
black, blue, ed and whi e, espec i ely. c) Scheme o p oposed on-
su ace NR-10 o NR-10’ ans o ma ion.
Figu e 4. On-su ace polyme isa ion o NR-10’. a) Dis ibu ions o
polyme ized GNR leng h as a unc ion o empe a u e. b) O e iew
STM image (159 K, 1.7 V, 0.11 nA) a e annealing o 583 K.
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in e ac ions be ween he i-isobu ylsilyl (TIBS) subs i u-
en s. Di e en packing geome ies we e ound (see Suppo -
ing In o ma ion Figu e S1), a u he es amen o he lack
o a s ong molecula egis y o he Ag(111) as well as
di ec o ial in e molecula in e ac ions. Wi hin he sel -
assembled s uc u es, we can iden i y he single molecules
(Figu e 2c). Thei con as is domina ed by he opog aphi-
cally p o uding moie ies. B igh e , asymme ic p o usions
signi y he bulky TIBS g oups. Two smalle , ound p o u-
sions ma k he posi ions o he e minal ace als.
We p oceeded o in es iga e sys ema ically he on-
su ace he mal chemis y and polyme isa ion o hese well-
de ined nano ibbons by annealing in s eps o 20 K ollowed
by STM examina ion (see Suppo ing In o ma ion Figu e S2
o a compila ion o STM images o all he annealing s eps).
A e annealing a 483 K, we obse ed ha some NR-10
molecules loose he b igh e p o usions co esponding o
he TIBS g oups and almos all o hem we e emo ed by
annealing a 503 K (Figu e 3a,b). The nano ibbon is now
cha ac e ised by h ee pai s o less b igh p o usions
co esponding o he e ia y bu yl ( Bu) subs i uen s and a
ain appea ence o he GNR backbone.[23] This is a ibu ed
o on-su ace dep o ec ion o he TIBS- e mina ed alkyne
moie ies, analogous o he dep o ec ion o ime hylsilyl
e mina ed alkynes on he same su ace.[24] The clea ed
TIBS g oups we e no iden i ied in ou STM images. The
TIBS dep o ec ion can lead o diace ylene linked monome s
o o su ace-s abilised adicals.[24,25] As he TIBS dep o-
ec ed NR-10 molecules showed no e idence o a eac i e
alkynyl g oup, and gi en he small esidual p essu e o H2
gas (�1×1010 mba ) in he UHV en i onmen , we p opose
a H passi a ion o he alkynyl g oup.[26] The TIBS dep o-
ec ed NR-10 seem o be in e ac ing by an de Waals o ces
o in e digi a ed Bu g oups. Ou side he sel -assembled
island, one can iden i y s eaking, p esumably caused by
mobile adso ba es. These may be a ibu ed o pa ially
TIBS dep o ec ed NR-10 o which he in e digi a ion o Bu
g oups, and hence hei immobiliza ion in he wo-dimen-
sional s uc u e, canno be accommoda ed.
We u he no ice he lack o opog aphic ea u es in he
posi ions o he e minal g oups, which, based on he STM
con as ,[23] indica es hei dep o ec ion.[7i] The e o e we
p opose he chemical ans o ma ion o NR-10 o he doubly
dep o ec ed NR-10’(Figu e 3c).
In he subsequen annealing s ep a 523 K, we obse e
he onse o an on-su ace ex ension o NR-10’by linking a
he e minal posi ions o he nano ibbon. The polyme -
isa ion is p omo ed by inc easing annealing empe a u es
(Figu e 4a), whe eby e en ually he su ace is co e ed by
molecula chains (Figu e 4b). Along wi h he polyme isa-
ion, we also obse e he onse o decomposi ion a he Bu
g oups, as judged by occasionally diminished con as a he
ela ed posi ions. As a uni o m con as o he Bu g oups is
ound in he STM images a e annealing a 503 K (see
Figu e 3) and Bu g oup de ec s occu mo e equen ly a e
annealing a 573 K (see Figu e 5b), his decomposi ion can
be a ibu ed o he highe empe a u e annealing, in good
acco d wi h ou ea lie epo o a sho e e ake one
monome .[27]
To iden i y he linking mode wi hin he chains, we
p epa ed a su ace o lowe molecula co e age (Figu e 5a).
He e we could clea ly ind chains cons uc ed o single
molecules, occasionally in e linking wi h segmen s ha pi o
a pa icula nodes. Thus, we can deduce he ollowing:
1) he polyme links a e no uni o m ac oss he NR-10’
polyme and 2) he chain is obus ly linked. The links ha e
been analysed as de ailed in he Suppo ing In o ma ion
Figu es S3, S4. Among he links we can iden i y p e iously
epo ed nodes o Ag-O4, o ming wi h he na i e Ag
ada oms (indica ed by blue ames).[27] The di e en appa-
en heigh o he me al node migh o igina e om a
a ia ion in he adso p ion si e, accommoda ion o mo e
han a single ada om o liga ion o small adduc s (due o
esidual gases in he acuum o molecula agmen s ela ed
o he monome ’s chemical modi ica ion). Thei o ma ion is
linked o he hyb idisa ion o he e minal ke one g oups
wi h he sil e and hei con e sion o ca echola es. In
addi ion, we can ecognise nodes wi h pai ed b igh
p o usions (g een and o ange ames). Thei imaging being
Figu e 5. Polyme node iden i ica ion. a) STM image showing obus chain binding wi h di e en node lexibili y (167 K, 1.8 V, 0.15 nA). b) High-
esolu ion STM image displaying ou di e en ypes o dime nodes (123 K, 1.5 V, 0.07 nA). c) Magni ica ion o he nodes iden i ied in he STM
image in (b) di ec ly compa ed wi h p oposed molecula model. Ag, C, N, O and H a e depic ed in yellow, black, blue, ed and whi e, espec i ely.
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in good acco d wi h epo s o Ag a oms in plana o gano-
me allic complexes,[28] we en a i ely a ibu e hese o Ag
ada oms. Using he de e mined posi ions o he Bu sub-
s i uen s o e alua e he dis ance be ween he monome s
(Figu e S3), we ind ha he assigned Ag ada oms a e
loca ed a posi ions ha canno accommoda e he e minal
O a oms in a plana geome y (as illus a ed in Figu e S3 ).
We he e o e p opose ha hese species a e di ec ly linked
o he e minal C a oms o he nano ibbon monome s.
Hence we de i e a model ha ea u es he consecu i e
exp ession o links wi h double b idges o ei he
CAgOC ( amed in g een in Figu e 5b,c) o di ec
CAgC ( amed in o ange in Figu e 5b,c). In e media e
s eps in he linking may esul in a il ed geome y be ween
he monome s (example indica ed by a ow in Figu e 5b).
He e, wi hou he clea signa u e o he posi ion o an Ag
ada om, i is no possible o p opose an exac bonding
mo i e (see Suppo ing In o ma ion Figu e S4).
Conclusion
We ha e demons a ed ha ES-CIBD is a p omising
me hod o con olling he deposi ion and p ocessing o
he molabile nanog aphenes. The exquisi e con ol o e he
p ocess allows o high-quali y deposi ions wi h small
amoun s o analy e o a bulky N-doped GNR. The well-
de ined na u e o he deposi ed species is cha ac e ized by
STM, e ealing a long- ange in e acial o de ing on he
Ag(111) su ace. Acco dingly, such p epa a ions a e sui able
o ab ica ing samples o be u he sc u inized by space-
a e aging analysis echniques owa ds ob aining comple e
in o ma ion abou he physicochemical p ope ies o he
su ace-con ined GNRs. Mo eo e , empe a u e-induced
ans o ma ions o N-doped GNR a o ded me al–o ganic
polyme s o up o 50 nm leng h. These a e assigned o a
a ia ion o me al–o ganic and o ganome allic nodes inco -
po a ing na i e Ag ada oms, based on high- esolu ion STM
insigh s. Thus, ES-CIBD is an icipa ed o acili a e u he
no el schemes o on-su ace syn hesis and in eg a ion o
nanog aphenes o nano-objec s in unc ional a chi ec u es a
in e aces.
Acknowledgemen s
This p ojec has ecei ed unding om he Eu opean
Union’s Ho izon 2020 esea ch and inno a ion p og amme
unde g an ag eemen s No. 946223 and No. 899895.
Financial suppo was p o ided by he Ge man Resea ch
Founda ion (DFG) h ough he TUM In e na ional G adu-
a e School o Science and Enginee ing (IGSSE), Excellence
Clus e e-con e sion, and he p io i y p og amme 1928
COORNETs, he China Schola ship Council (CSC) and he
Eu opean Resea ch Council (ERC) (no. 722951). This
p ojec has ecei ed unding om he Eu opean Resea ch
Council (ERC) unde he Eu opean Union’s Ho izon 2020
esea ch and inno a ion p og amme (G an Ag eemen No.
722951). This wo k was ca ied ou wi h suppo om he
Basque Founda ion o Science (Ike basque), POLYMAT,
he Uni e si y o he Basque Coun y, Gobie no Vasco
(BERC p og amme). Technical and human suppo p o-
ided by SGIke o UPV/EHU and Eu opean unding
(ERDF and ESF) is acknowledged. Open Access unding
enabled and o ganized by P ojek DEAL.
Con lic o In e es
The au ho s decla e no con lic o in e es s.
Keywo ds: Elec osp ay Deposi ion ·G aphene Nano ibbons ·
Scanning Tunnelling Mic oscopy ·Ul a-High Vacuum ·
On-Su ace Syn hesis
[1] a) L. Tali z, P. Ru ieux, R. Fasel, Ad . Ma e . 2016,28, 6222–
6231; b) L. Chen, Y. He nandez, X. Feng, K. Müllen, Angew.
Chem. In . Ed. 2012,51, 7640–7654; Angew. Chem. 2012,124,
7758–7773; c) Z. Fei, M. D. Gold lam, J. S. Wu, S. Dai, M.
Wagne , A. S. McLeod, M. K. Liu, K. W. Pos , S. Zhu,
G. C. A. M. Janssen, M. M. Fogle , D. N. Baso , Nano Le .
2015,15, 8271–8276.
[2] a) D. Wei, L. Xie, K. K. Lee, Z. Hu, S. Tan, W. Chen, C. H.
Sow, K. Chen, Y. Liu, A. T. S. Wee, Na . Commun. 2013,4,
1374; b) Y. Zhong, B. Kuma , S. Oh, M. T. T inh, Y. Wu, K.
Elbe , P. Li, X. Zhu, S. Xiao, F. Ng, M. L. S eige wald, C.
Nuckolls, J. Am. Chem. Soc. 2014,136, 8122–8130.
[3] L. Jiao, X. Wang, G. Dianko , H. Wang, H. Dai, Na .
Nano echnol. 2010,5, 321–325.
[4] J. Laskin, G. E. Johnson, V. P abhaka an, J. Phys. Chem. C
2016,120, 23305–23322.
[5] a) X. Meng, C. Yu, X. Song, Y. Liu, S. Liang, Z. Liu, C. Hao, J.
Qiu, Ad . Ene gy Ma e . 2015,5, 1500180; b) Y. Zhong, M. T.
T inh, R. Chen, G. E. Pu dum, P. P. Khlyabich, M. Sezen, S.
Oh, H. Zhu, B. Fowle , B. Zhang, W. Wang, C.-Y. Nam, M. Y.
S ei , C. T. Black, M. L. S eige wald, Y.-L. Loo, F. Ng, X. Y.
Zhu, C. Nuckolls, Na . Commun. 2015,6, 8242; c) T. J. Sis o, Y.
Zhong, B. Zhang, M. T. T inh, K. Miya a, X. Zhong, X. Y.
Zhu, M. L. S eige wald, F. Ng, C. Nuckolls, J. Am. Chem. Soc.
2017,139, 5648–5651.
[6] a) M. S ępień, E. Gońka, M. Żyła, N. Sp u a, Chem. Re . 2017,
117, 3479–3716; b) J. Cai, C. A. Pignedoli, L. Tali z, P.
Ru ieux, H. Söde, L. Liang, V. Meunie , R. Be ge , R. Li, X.
Feng, K. Müllen, R. Fasel, Na . Nano echnol. 2014,9, 896–900;
c) Y.-C. Chen, T. Cao, C. Chen, Z. Ped am azi, D. Habe e ,
D. G. de O eyza, F. R. Fische , S. G. Louie, M. F. C ommie,
Na . Nano echnol. 2015,10, 156–160; d) D. J. Rizzo, G. Vebe ,
T. Cao, C. B onne , T. Chen, F. Zhao, H. Rod iguez, S. G.
Louie, M. F. C ommie, F. R. Fische , Na u e 2018,560, 204–
208; e) A. N. Abbas, G. Liu, A. Na i a, M. O osco, X. Feng, K.
Müllen, C. Zhou, J. Am. Chem. Soc. 2014,136, 7555–7558.
[7] a) L. Chen, C. Li, K. Müllen, J. Ma e . Chem. C 2014,2, 1938–
1956; b) A. Ma eo-Alonso, Chem. Soc. Re . 2014,43, 6311–
6324; c) J. Liu, B.-W. Li, Y.-Z. Tan, A. Giannakopoulos, C.
Sanchez-Sanchez, D. Beljonne, P. Ru ieux, R. Fasel, X. Feng,
K. Müllen, J. Am. Chem. Soc. 2015,137, 6097–6103; d) W.
Zeng, H. Phan, T. S. He ng, T. Y. Gopalak ishna, N. A a ani,
Z. Zeng, H. Yamada, J. Ding, J. Wu, Chem 2017,2, 81–92;
e) W. Fan, T. Winands, N. L. Dol sinis, Y. Li, Z. Wang, Angew.
Chem. In . Ed. 2017,56, 15373–15377; Angew. Chem. 2017,129,
15575–15579; ) J. Lee, H. Li, A. J. Kalin, T. Yuan, C. Wang, T.
Olson, H. Li, L. Fang, Angew. Chem. In . Ed. 2017,56, 13727–
13731; Angew. Chem. 2017,129, 13915–13919; g) W. Chen, X.
Angewand e
Chemie
Resea ch A icles
Angew. Chem. In . Ed. 2022,61, e202111816 (5 o 7) © 2022 The Au ho s. Angewand e Chemie In e na ional Edi ion published by Wiley-VCH GmbH

Li, G. Long, Y. Li, R. Ganguly, M. Zhang, N. A a ani, H.
Yamada, M. Liu, Q. Zhang, Angew. Chem. In . Ed. 2018,57,
13555–13559; Angew. Chem. 2018,130, 13743–13747; h) Z. Cai,
M. A. Awais, N. Zhang, L. Yu, Chem 2018,4, 2538–2570; i) D.
Co izo-Lacalle, J. P. Mo a-Fuen es, K. S u yński, A. Saeki,
M. Melle-F anco, A. Ma eo-Alonso, Angew. Chem. In . Ed.
2018,57, 703–708; Angew. Chem. 2018,130, 711–716; j) D.
Co izo-Lacalle, C. Gozal ez, M. Melle-F anco, A. Ma eo-
Alonso, Nanoscale 2018,10, 11297–11301; k) P. Jin, T. Song, J.
Xiao, Q. Zhang, Asian J. O g. Chem. 2018,7, 2130–2146;
l) U. H. F. Bunz, J. F eudenbe g, Acc. Chem. Res. 2019,52,
1575–1587; m) W. Chen, F. Yu, Q. Xu, G. Zhou, Q. Zhang,
Ad . Sci. 2020,7, 1903766; n) S. R. Peu i oy, T. J. Sis o, F. Ng,
M. L. S eige wald, R. Chen, C. Nuckolls, Chem. Rec. 2019,19,
1050–1061; o) G. Liu, C. Xiao, F. Neg i, Y. Li, Z. Wang,
Angew. Chem. In . Ed. 2020,59, 2008–2012; Angew. Chem.
2020,132, 2024–2028; p) S. Ma, J. Gu, C. Lin, Z. Luo, Y. Zhu,
J. Wang, J. Am. Chem. Soc. 2020,142, 16887–16893; q) F.
Chen, W. Gu, A. Saeki, M. Melle-F anco, A. Ma eo-Alonso,
O g. Le . 2020,22, 3706–3711; ) S. Cas o-Fe nández, C. M.
C uz, I. F. A. Ma iz, I. R. Má quez, V. G. Jiménez, L. Palomi-
no-Ruiz, J. M. Cue a, E. Maçôas, A. G. Campaña, Angew.
Chem. In . Ed. 2020,59, 7139–7145; Angew. Chem. 2020,132,
7205–7211; s) X. Yang, F. Rominge , M. Mas ale z, Angew.
Chem. In . Ed. 2021,60, 7941–7946; ) R. K. Dubey, M. Melle-
F anco, A. Ma eo-Alonso, J. Am. Chem. Soc. 2021,143, 6593–
6600; u) A. Na i a, X. Feng, Y. He nandez, S. A. Jensen, M.
Bonn, H. Yang, I. A. Ve zhbi skiy, C. Casi aghi, M. R. Hansen,
A. H. R. Koch, G. Fy as, O. I asenko, B. Li, K. S. Mali, T.
Balandina, S. Mahesh, S. De Fey e , K. Müllen, Na . Chem.
2014,6, 126–132; ) M. Daigle, D. Miao, A. Luco i, M.
Tommasini, J.-F. Mo in, Angew. Chem. In . Ed. 2017,56, 6213–
6217; Angew. Chem. 2017,129, 6309–6313; w) Y. Huang, Y.
Mai, U. Bese , J. Teyssandie , G. Velpula, H. an Go p, L. A.
S aasø, M. R. Hansen, D. Rizzo, C. Casi aghi, R. Yang, G.
Zhang, D. Wu, F. Zhang, D. Yan, S. De Fey e , K. Müllen, X.
Feng, J. Am. Chem. Soc. 2016,138, 10136–10139; x) W. Niu, J.
Liu, Y. Mai, K. Müllen, X. Feng, T ends Chem. 2019,1, 549–
558.
[8] a) A. Na i a, X.-Y. Wang, X. Feng, K. Müllen, Chem. Soc. Re .
2015,44, 6616–6643; b) P. Ru ieux, S. Wang, B. Yang, C.
Sánchez-Sánchez, J. Liu, T. Dienel, L. Tali z, P. Shinde, C. A.
Pignedoli, D. Passe one, T. Dumsla , X. Feng, K. Müllen, R.
Fasel, Na u e 2016,531, 489–492; c) F. Klappenbe ge , Y.-Q.
Zhang, J. Bjö k, S. Klya skaya, M. Ruben, J. V. Ba h, Acc.
Chem. Res. 2015,48, 2140–2150; d) Z. Chen, W. Zhang, C.-A.
Palma, A. Lodi Rizzini, B. Liu, A. Abbas, N. Rich e , L.
Ma ini, X.-Y. Wang, N. Ca ani, H. Lu, N. Mish a, C. Cole i,
R. Be ge , F. Klappenbe ge , M. Kläui, A. Candini, M.
A on e, C. Zhou, V. De Renzi, U. del Pennino, J. V. Ba h,
H. J. Räde , A. Na i a, X. Feng, K. Müllen, J. Am. Chem. Soc.
2016,138, 15488–15496.
[9] a) S. Rauschenbach, F. L. S adle , E. Lunedei, N. Malinowski,
S. Kol so , G. Cos an ini, K. Ke n, Small 2006,2, 540–547;
b) X. Wu, M. Delbianco, K. Angga a, T. Michnowicz, A.
Pa do-Va gas, P. Bha a e, S. Sen, M. P is l, S. Rauschenbach,
U. Schlickum, S. Abb, P. H. Seebe ge , K. Ke n, Na u e 2020,
582, 375–378; c) C. Hamann, R. Wol mann, I. P. Hong, N.
Haup mann, S. Ka an, R. Be nd , Re . Sci. Ins um. 2011,82,
033903; d) O. Hadja , P. Wang, J. H. Fu ell, Y. Dessia e ik, Z.
Zhu, J. P. Cowin, M. J. Iedema, J. Laskin, Anal. Chem. 2007,
79, 6566–6574; e) P. Su, X. Chen, A. J. Smi h, M. F. Espenship,
H. Y. Samayoa O iedo, S. M. Wilson, H. Gholipou -Ranjba ,
C. La iba-Andaluz, J. Laskin, Anal. Chem. 2021,93, 11576–
11584; ) W.-P. Peng, M. P. Goodwin, Z. Nie, M. Volný, Z.
Ouyang, R. G. Cooks, Anal. Chem. 2008,80, 6640–6649; g) S.
Rauschenbach, M. Te nes, L. Ha nau, K. Ke n, Annu. Re .
Anal. Chem. 2016,9, 473–498.
[10] a) G. E. Johnson, Q. Hu, J. Laskin, Annu. Re . Anal. Chem.
2011,4, 83–104; b) J. Laskin, G. E. Johnson, J. Wa neke, V.
P abhaka an, Angew. Chem. In . Ed. 2018,57, 16270–16284;
Angew. Chem. 2018,130, 16506–16521.
[11] a) S. Abb, N. Ta a , J. Co és, B. And iye sky, L. Ha nau,
J. C. Schön, S. Rauschenbach, K. Ke n, RSC Ad . 2019,9,
35813–35819; b) S. Abb, N. Ta a , J. Co és, B. And iye sky,
L. Ha nau, J. C. Schön, S. Rauschenbach, K. Ke n, Angew.
Chem. In . Ed. 2019,58, 8336–8340; Angew. Chem. 2019,131,
8424–8428.
[12] a) S. Abb, L. Ha nau, R. Gu zle , S. Rauschenbach, K. Ke n,
Na . Commun. 2016,7, 10335; b) S. Rauschenbach, G. Rinke,
R. Gu zle , S. Abb, A. Alba ghash, D. Le, T. S. Rahman, M.
Dü , L. Ha nau, K. Ke n, ACS Nano 2017,11, 2420–2427;
c) P. Wang, J. Laskin, Angew. Chem. In . Ed. 2008,47, 6678–
6680; Angew. Chem. 2008,120, 6780–6782; d) P. Wang, O.
Hadja , J. Laskin, J. Am. Chem. Soc. 2007,129, 8682–8683.
[13] a) Z. Deng, N. Thon asen, N. Malinowski, G. Rinke, L.
Ha nau, S. Rauschenbach, K. Ke n, Nano Le . 2012,12, 2452–
2458; b) J.-N. Longchamp, S. Rauschenbach, S. Abb, C.
Esche , T. La yche skaia, K. Ke n, H.-W. Fink, P oc. Na l.
Acad. Sci. USA 2017,114, 1474; c) J. Laskin, Q. Hu, J. Am.
Soc. Mass Spec om. 2017,28, 1304–1312; d) Q. Hu, J. Laskin,
J. Phys. Chem. B 2016,120, 4927–4936; e) Z. Ouyang, Z.
Taká s, T. A. Blake, B. Gologan, A. J. Guymon, J. M. Wise-
man, J. C. Oli e , V. J. Da isson, R. G. Cooks, Science 2003,
301, 1351–1354.
[14] A. Walz, K. S oibe , A. Hue ig, H. Schlich ing, J. V. Ba h,
ChemRxi 2021, h ps://doi.o g/10.33774/chem xi -2021-gw53x-
2.
[15] a) G. Rinke, S. Rauschenbach, S. Sch e l, T. N. Hoheisel, J.
Blohm, R. Gu zle , F. Rosei, H. F auen a h, K. Ke n, In . J.
Mass Spec om. 2015,377, 228–234; b) N. Haup mann, K.
Scheil, T. G. Gopakuma , F. L. O e, C. Schü , R. He ges, R.
Be nd , J. Am. Chem. Soc. 2013,135, 8814–8817.
[16] N. Va s, Y. Wang, S. Sen, S. Szilagyi, H. Ochne , S. Abb, M.
Bu gha d, W. Sigle, K. Ke n, P. A. an Aken, S. Rauschen-
bach, ACS Nano 2020,14, 4626–4635.
[17] a) T. B andl, S. Johannsen, D. Häussinge , N. Su yade a a, A.
P escimone, S. Be nha d, M. G ube , M. Ruben, R. Be nd , M.
Mayo , Angew. Chem. In . Ed. 2020,59, 15947–15952; Angew.
Chem. 2020,132, 16081–16086; b) S. Kahle, Z. Deng, N.
Malinowski, C. Tonnoi , A. Fo men -Aliaga, N. Thon asen, G.
Rinke, D. Le, V. Tu kowski, T. S. Rahman, S. Rauschenbach,
M. Te nes, K. Ke n, Nano Le . 2012,12, 518–521.
[18] a) P. Fan uzzi, L. Ma ini, A. Candini, V. Co adini, U.
del Pennino, Y. Hu, X. Feng, K. Müllen, A. Na i a, M.
A on e, Ca bon 2016,104, 112–118; b) J. N. O’Shea, J. B.
Taylo , J. C. Swa b ick, G. Magnano, L. C. Mayo , K. Schul e,
Nano echnology 2007,18, 035707.
[19] a) P. A. Held, H. Fuchs, A. S ude , Chem. Eu . J. 2017,23,
5874–5892; b) S. Clai , D. G. de O eyza, Chem. Re . 2019,119,
4717–4776.
[20] a) L. G ill, M. Dye , L. La e en z, M. Pe sson, M. V. Pe e s, S.
Hech , Na . Nano echnol. 2007,2, 687–691; b) L. La e en z, V.
Ebe ha d , C. D i, C. A ich, G. Comelli, F. Esch, S. Hech , L.
G ill, Na . Chem. 2012,4, 215–220; c) C. Bombis, F. Ample, L.
La e en z, H. Yu, S. Hech , C. Joachim, L. G ill, Angew.
Chem. In . Ed. 2009,48, 9966–9970; Angew. Chem. 2009,121,
10151–10155.
[21] L. K umbein, K. Angga a, M. S ella, T. Michnowicz, H.
Ochne , S. Abb, G. Rinke, A. Po z, M. Dü , U. Schlickum,
A. Baldwin, A. Flo is, K. Ke n, S. Rauschenbach, Phys. Re .
Le . 2021,126, 056001.
Angewand e
Chemie
Resea ch A icles
Angew. Chem. In . Ed. 2022,61, e202111816 (6 o 7) © 2022 The Au ho s. Angewand e Chemie In e na ional Edi ion published by Wiley-VCH GmbH
[22] A. Walz, Doc o al hesis, Technische Uni e si ä München
(München), 2020.
[23] L. Jiang, A. C. Papageo giou, S. C. Oh, Ö. Sağlam, J. Reiche ,
D. A. Duncan, Y.-Q. Zhang, F. Klappenbe ge , Y. Guo, F.
Alleg e i, S. Mo e, R. Bhosale, A. Ma eo-Alonso, J. V. Ba h,
ACS Nano 2016,10, 1033–1041.
[24] L. Zhang, Y.-Q. Zhang, Z. Chen, T. Lin, M. Paszkiewicz, R.
Hellwig, T. Huang, M. Ruben, J. V. Ba h, F. Klappenbe ge ,
ChemPhysChem 2019,20, 2382–2393.
[25] a) S. Kawai, O. K ejčí, A. S. Fos e , R. Pawlak, F. Xu, L. Peng,
A. O i a, E. Meye , ACS Nano 2018,12, 8791–8797; b) Y.-Q.
Zhang, J. Bjö k, P. Webe , R. Hellwig, K. Dille , A. C.
Papageo giou, S. C. Oh, S. Fische , F. Alleg e i, S. Klya skaya,
M. Ruben, J. V. Ba h, F. Klappenbe ge , J. Phys. Chem. C
2015,119, 9669–9679; c) D. P enzel, T. Sande , J. Gebha d , H.
Soni, F. Hampel, A. Gö ling, S. Maie , R. R. Tykwinski, Chem.
Eu . J. 2017,23, 1846–1852.
[26] A. Sánchez-G ande, J. I. U gel, A. Cahlík, J. San os, S.
Edala manesh, E. Rod íguez-Sánchez, K. Lauwae , P. Mu om-
bo, D. Nach igallo á, R. Nieman, H. Lischka, B. de la To e,
R. Mi anda, O. G öning, N. Ma ín, P. Jelínek, D. Écija,
Angew. Chem. In . Ed. 2020,59, 17594–17599; Angew. Chem.
2020,132, 17747–17752.
[27] A. C. Papageo giou, J. Li, S. C. Oh, B. Zhang, Ö. Sağlam, Y.
Guo, J. Reiche , A. B. Ma co, D. Co izo-Lacalle, A. Ma eo-
Alonso, J. V. Ba h, Nanoscale 2018,10, 9561–9568.
[28] H.-Y. Gao, P. A. Held, M. Kno , C. Mück-Lich en eld, J.
Neugebaue , A. S ude , H. Fuchs, J. Am. Chem. Soc. 2014,136,
9658–9663.
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Angewand e
Chemie
Resea ch A icles
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