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DOI: 10.5281/zenodo.17287982
RADNEXT T ansna ional Access Summa y Repo
P ojec i le
Beam Moni o ing a High Dose-Ra e wi h Silicon Senso s
(BeaMHiSi)
P ojec TA iden i ie
TA11-367
Gene al applica ion
High-ene gy accele a o s, Medical applica ions, FLASH and
minibeam adio he apy
Type o es
Radia ion moni o calib a ion, Beam diagnos ics
G oup leade , Ins i u e
Anna Vigna i, Uni e si y o Tu in and Na ional Ins i u e o
Nuclea Physics (INFN) To ino
Co-au ho s, Ins i u es
Robe o Sacchi, Uni e si y o To ino and INFN To ino, I aly
Simona Gio danengo, INFN To ino, I aly
Umbe o Deu , Uni e si y o To ino and INFN To ino, I aly
A ianna Fe o, Uni e si y o To ino and INFN To ino, I aly
Felix Mas Milian, INFN To ino, I aly, and Uni e sidade Es adual
de San a C uz, Bahia, B azil
Diango Mon al an Oli a es, Uni e si y o To ino and INFN
To ino, I aly
Da e(s) o he expe imen
08/04/25 – 06/05/25
Facili y
HollandPTC, Del
Amoun o access g an ed
8h
Objec i es o he expe imen s
The main goal was o cha ac e ize he esponse o hin silicon senso s, eadou wi h a mul i-channel
on -end chip (TERA09), unde ul a-high dose a e (UHDR) p o on beams. This includes s udying he
linea i y o he senso s’ esponse, cha ge ecombina ion e ec s, beam pe u ba ion, and spa ial
esolu ion, wi h he inal goal o demons a ing he easibili y o using his echnology o beam
moni o ing and quali y assu ance in UHDR adio he apy.
The choice o p o on beams a he Holland P o on The apy Cen e is mo i a ed by he need o es he
senso s unde clinically ele an ene gies (70-250 MeV) and dose a es, especially UHDR egimes (>
40 Gy/s a e age dose a e).
Two ypes o p o o ype senso s we e used:
1. Mul i-pad silicon senso s ( a ious hicknesses and a eas), o s udying undamen al cha ge
collec ion and ecombina ion mechanisms.
2. A 2.6 x 2.6 cm² s ip senso (146 s ips), o e alua e pe o mance in spa ially esol ed beam
moni o ing.
EDMS 3328315 .1 s a us In Wo k access Res ic ed
PDF om TA11-367-Zenodo.doc modi ied 2025-10-07 16:00
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EDMS NO.
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These es s aim a add essing he known limi a ions o silicon de ec o s and eadou elec onics (e.g.,
non-linea i y o he esponse a high cha ge densi ies) and assess hei po en ial as an al e na i e o
ioniza ion chambe s o eal- ime moni o ing in ad anced adio he apy modali ies.
Expe imen es epo
This expe imen was aimed a e alua ing he esponse linea i y and pe o mance o hin silicon PiN
de ec o s—bo h pad and s ip a chi ec u es—when exposed o ul a-high dose a e (UHDR) p o on
beams. The expe imen was conduc ed unde he RADNEXT open da a amewo k o assess senso
linea i y, spa ial esolu ion, sa u a ion h esholds, and signal eadou s a egies ac oss di e en beam
modali ies. A key objec i e was o alida e he obus ness o hin silicon de ec o s and eadou
elec onics unde UHDR i adia ion condi ions.
De ec o in o ma ion
• Technology: PiN silicon mul i-pad senso s
• Beakdown Vol age: > 500 V
• Deple ion Vol age: ~10 V
• P e-I adia ion Tes ing: I-V cu es con i med ull unc ionali y
Pad senso s:
• Ac i e Thickness (μm): 45, 15
• Tes ed a ea (mm²): 0.25, 2
• Wa e Lo : p oduced by Fondazione B uno Kessle (T en o) wi hin he EXFLU1 p ojec
S ip senso s:
• Ac i e A ea: 2.6 × 2.6 cm²
• S ip Pi ch: 180 μm
• Ac i e Thickness (μm): 45, 60
• Wa e Lo : p oduced by Fondazione B uno Kessle (T en o) wi hin he Mo eIT p ojec
Read ou Sys em:
Pa ame e
Pad Senso s
S ip Senso s
Chip
TERA09 (64-channel)
TERA09 (2 × 64-channel)
DAQ Pla o m
NI sbRIO-9606
NI sbRIO-9606
Cha ge Quan um
600 C
600 C
DAQ sampling
80 MHz
2 kHz
Bias Vol age
200 V
150–290 V
Expe imen al Condi ions:
• Ene gy: 250 MeV
• Beam-on ime un: 100 ms
• Dose a e ange: up o 1480 Gy/s (co esponding o a beam cu en o 800 nA a he exi
window)
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Dosime y and Moni o ing Re e ence in-si u:
• Beam moni o : BMI07 UHDR ioniza ion chambe (DE.TEC.TOR)
• Dosime e : Ad anced Ma kus Chambe (PTW)
• Beam p o ile: Lynx de ec o (IBA)
Resul s and P elimina y Analysis:
Pad De ec o s linea i y:
The ollowing plo s show he co ela ion be ween measu ed cu en and dose a e o 45 μm (in ed)
and 15 μm hick pad senso s (in blue) bo h o 2 and 0.25 mm².
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S ip De ec o s: Beam P o iling and Sa u a ion Beha io :
Th ee con igu a ions we e explo ed o assess sa u a ion h esholds.
Con igu a ion
Senso
Thickness
Readou Scheme
Max Dose
Ra e
A
45 μm
2 TERA09 chips used (64 ch each), 128 s ip senso ; each
s ip is eadou by a sepa a e TERA09 channel
~565 Gy/s
B
45 μm
The signal o 1 s ip o e ou is eadou by 4 channels o
TERA09 chip, so ha he s ip cu en is spli in o 4
channels. Only 32-s ip ou o he 128 a ailable a e
eadou .
~1210 Gy/s
C
60 μm
One s ip ou o he 128 a ailable is eadou h ough a
passi e cu en di ide
~1480 Gy/s
A. The esul s show sa u a ion o he elec onics (cen al s ip cu en pla eau a ~3 mA) a
~600 Gy/s, which co esponds a a beam cu en o ~300 nA a he exi window.
a) b)
(a) Beam p o iles p ojec ed along he e ical axis o ou di e en dose a es. The esponse o s ip no. 56 is
highligh ed in iole . (b) Sa u a ion beha iou o he eadou elec onics obse ed in s ip 56, which becomes
e iden a dose a es exceeding 600 Gy/s
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B. This con igu a ion p ese es linea i y < 2.5% de ia ion despi e educed spa ial esolu ion.
a) b)
a) Beam p o ile p ojec ion acqui ing 32 ou 128 s ips o he silicon s ip de ec o . b) Linea i y esponse o he
cen al s ip as a unc ion o he deli e ed dose a e.
C. This con igu a ion demons a es ha a esis i e di ide e ec i ely ex ends linea i y up o
1480 Gy/s, which co esponds o he maximum alue o beam cu en ha can be eached a
he exi window (800 nA).
a) b)
a) Beam p o ile measu ed wi h he silicon s ip de ec o . The posi ions o he wo analyzed s ips a e indica ed: he
s ip connec ed wi hou a cu en di ide (in ed) and he s ip connec ed wi h a cu en di ide (in black); b)
Cu en esponse o he same wo s ips as a unc ion o he a e age dose a e.
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All he objec i es o he expe imen we e success ully achie ed, demons a ing he linea i y, eliabili y,
and obus ness o he ul a- hin silicon PiN senso s and he TERA09 eadou sys em unde ul a-high
dose a e p o on i adia ion, in condi ions ele an o UHDR adio he apy.
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This p ojec has ecei ed unding om he Eu opean Union's Ho izon 2020
esea ch and inno a ion p og amme unde g an ag eemen No 101008126.
