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EDMS NO.
3355747
VALIDITY
Released
REV.
1.0
DOI: 10.5281/zenodo.17288078
RADNEXT T ansna ional Access Summa y Repo
P ojec i le
E alua ion o high ene gy p o on es s o COTS de- isking
P ojec TA iden i ie
TA12-379
Gene al applica ion
Space
Type o es
SEE
G oup leade , Ins i u e
Samuel DUBOS, TRAD Tes s & Radia ions
Co-au ho s, Ins i u es
Enoal LE GOULVEN, Pie e GARCIA, Je emy GUILLERMIN,
Leo COIC
Da e(s) o he expe imen
22/06/2025
Facili y
PSI
Amoun o access g an ed
16 h
Objec i es o he expe imen s
The goal o his expe imen was o e alua e he ele ance o high ene gy p o on beam o SEEs
es ing o COTS, mo e pa icula ly o des uc i e SEEs. Indeed, p o on boa d es ing [1] is
inc easingly eques ed by New Space indus ials, as he budge and delay associa ed wi h such es s
is educed compa ed o hea y ion es s on indi idual pa s.
Howe e , such es s migh unde es ima e he sensi i i y o de ices o des uc i e Single E en E ec s,
as p o on-induced SEEs a e mainly p oduced by seconda y ions wi h e y sho ange. Indeed, many
wo ks suppo he e idence ha seconda y hea y ions p oduced by p o ons h ough nuclea eac ions
a e e y sho anged, wi h low a e aged LET alue, which is hus limi ing o igge ing SEEs such as
Single E en La chup, o Single E en Bu nou [2][3].
This p ojec , pe o med along wi h he CNES, i s in ol ed simula ions o s udy he p o on nuclea
eac ions in Silicon. Then, de ices wi h a known sensi i i y o des uc i e Single E en E ec s, wi h
a ious LET h esholds below 15 MeV.cm²/mg, we e selec ed. The inal s ep was o pe o m high
ene gy p o on es s on hese de ices o de e mine i hese sensi i i ies o des uc i e SEEs can be
e ealed only wi h p o on es s.
Expe imen es epo
Fo he expe imen , 9 candida es we e selec ed o unde go p o on es . These 9 de ices ha e comple e
cha ac e iza ion unde hea y ions and hei sensi i i y o Single E en La chup ha e been
demons a ed in he pas , wi h LET h<15 MeV.cm²/mg. The 9 es candida es a e p esen ed in he able
below:
EDMS 3355747 .1 s a us In Wo k access Res ic ed
PDF om TA12-379-Zenodo.doc modi ied 2025-10-07 16:13
h ps:// adnex .web.ce n.ch/
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EDMS NO.
3355747
VALIDITY
Released
REV.
1.0
Re e ence
Func ion
SEL LET h
(MeV.cm²/mg)
STM706M6F
Supply supe iso
3<LET h<10.2
(VDD=5.5V, T=25°C)
STLM75DS2F
Digi al Tempe a u e Senso
and The mal Wa chdog
3.3<LET h<5.7
(VDD=3.6V, T=85°C)
Si7414DN-T1-E3 [4]
N-MOSFET
LET h<2.7 @VDS=45V
MAX6301ESA+
Wa chdog
5.7<LET h<10
(VDD=3.3V, T=25°C)
MCP23018
I²C16-BIT I/O EXPANDER
10<LET h<16
(VDD=3.3V, T=25°C)
BSI
SRAM
(VDD=3.3V, T=25°C)
SRAM memo y
SRAM
LET h<1.3
(VDD=3.3V, T=64°C)
MCP2551-I/SN [5]
T anscei e CAN
5<LET h<10
(VCC=5V, T=25°C & 85°)
LTC2052 [6]
OP Amp
5<LET h<8.2
(T=25°C)
LET h<5
(T=25°C)
TABLE 1: Re e ences selec ed o he es campaign
Fo he p o on es campaign, a leas 4 samples o each e e ence we e p epa ed, and he es
benches we e ope a ed in he same condi ion (biasing and empe a u e), as du ing he hea y ion es s.
Gene ic in o ma ion abou he TRAD GeV es bench o SEL, and he CNES TILU2 es bench o SEL,
can be ound in [7]. The p o on ene gy used was he maximum ene gy a ailable o ~200 MeV, and a
luence o 1E+11 p+/cm² was eached o each sample (o less depending on he numbe o e en s
obse ed).
Tes esul s a e s ill unde analysis, bu e y ew e e ences men ioned in he able abo e showed a
sensi i i y o SEL induced by p o ons: only 1/3 o he de ices we e sensi i e o SELs, despi e luences
>4E+11 eached on he di e en e e ences.
The emaining wo k o his s udy, a e ho ough analysis o he es esul s, will consis s in es ima ing
he isk associa ed wi h a null esul unde p o on, in he case o a boa d es ing o example. The
objec i e is o de e mine he di e ences in in-o bi MTTF (Mean Time To Failu e) calcula ed, be ween a
componen sensi i e o SEL induced by p o ons, and a e e ence no sensi i e unde p o ons.
An abs ac will also be submi ed o he RADECS 2026 con e ence o p esen he es esul s ob ained
and he analysis.
[1] Boa d Le el P o on Tes ing Book o Knowledge o NASA Elec onic Pa s and Packaging P og am,
S e en M. Gue in Je P opulsion Labo a o y Pasadena, Cali o nia, JPL Publica ion 17-7 11/17
[2] D. M. Hiems a and E. W. Blackmo e, "LET spec a o p o on ene gy le els om 50 o 500 MeV and
hei e ec i eness o single e en e ec s cha ac e iza ion o mic oelec onics," in IEEE T ansac ions
on Nuclea Science, ol. 50, no. 6, pp. 2245-2250, Dec. 2003, doi: 10.1109/TNS.2003.821811
[3] R. Ladbu y, J. . -M. Lauens ein and K. P. Hayes, "Use o P o on SEE Da a as a P oxy o Bounding
Hea y-Ion SEE Suscep ibili y," in IEEE T ansac ions on Nuclea Science, ol. 62, no. 6, pp. 2505-2510,
Dec. 2015, doi: 10.1109/TNS.2015.2496351.
[4] J. -M. Lauens ein e al., "Recen Radia ion Tes Resul s o T ench Powe MOSFETs," 2017 IEEE
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h ps://www.linkedin.com/company/ adnex
EDMS NO.
3355747
VALIDITY
Released
REV.
1.0
Radia ion E ec s Da a Wo kshop (REDW), New O leans, LA, USA, 2017, pp. 1-8, doi:
10.1109/NSREC.2017.8115473.
[5] V. S. Anashin e al., "Tes Resul s Ob ained on he Low and High Ene gies Hea y Ion Tes
Facili ies," 2015 IEEE Radia ion E ec s Da a Wo kshop (REDW), Bos on, MA, USA, 2015, pp. 1-4, doi:
10.1109/REDW.2015.7336738.
[6] F. I om, S. G. Aga wal and M. Am ba , "Compendium o Single-E en La chup and To al Ionizing
Dose Tes Resul s o Comme cial and Radia ion Tole an Ope a ional Ampli ie s," 2014 IEEE Radia ion
E ec s Da a Wo kshop (REDW), Pa is, F ance, 2014, pp. 1-8, doi: 10.1109/REDW.2014.7004561.
[7] S. Dubos e al., "Re iew o Al e na i es o Hea y Ions B oad Beam o SEL Sc eening o COTS,"
2023 23 d Eu opean Con e ence on Radia ion and I s E ec s on Componen s and Sys ems
(RADECS), Toulouse, F ance, 2023, pp. 1-8, doi: 10.1109/RADECS59069.2023.10767026.
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