Design o a Wideband Ampli ie o es Ins umen
Cu en T ans o me s in he Sup aha monic Range
And ea Ma isco i
DITEN
Uni e si y o Geno a
Geno a, I aly
0000-0002-0096-7305
Abs ac —Tes ing o cu en Ins umen T ans o me s elies
on low-dis o ion wideband gene a ion, in pa icula o he
mode n exigency o ex ending es ing in he sup aha monic ange
(up o 150 kHz). Whe eas single- one ampli ude accu acy and
con ollabili y has been mos ly conside ed so a , low-dis o ion
o non-linea i y e i ica ion and ansien beha iou in p esence
o commu a ing semiconduc o de ices a e also ele an . The
design o a s able, accu a e and low-dis o ion ampli ie is dis-
cussed, ea u ing 15 A ou pu and sub-µs ise ime in he p esen
ealiza ion, bu scalable o highe cu en . Design solu ions we e
selec ed ha can be easily eplica ed, including mino a ian s
o adap o di e en exigencies. P elimina y expe imen al esul s
o he p o o ype a e epo ed.
Index Te ms—ampli ie s, cu en measu emen , dis o ion,
ins umen ans o me s.
I. INTRODUCTION
I is commonly acknowledged ha in mode n g ids powe
quali y p oblems occu no longe only o he well-known ha -
monics, bu dis o ion a highe equency mus be conside ed,
due o he ex ensi e use o s a ic con e sion echnology. This
applies o bo h low- ol age (LV) and medium- ol age (MV)
scena ios, as discussed in [1]. The numbe o powe con e -
e s di ec ly connec ed o he dis ibu ion g id has inc eased,
due o he signi ican p esence o enewables (in pa icula
pho o ol aic pa ks, bo h a he LV and MV le el, and wind
pa ks, mos ly a he MV le el due o hei conside able powe
a ing) and o cha ging s a ions and supply poin s ( o a ious
o ms o elec omobili y [2]). Recen s udies ha e shown ha
signi ican dis o ion akes place well up o 500 kHz [1], [3], as
con i med by he la es upda e o he IEC 61869-1 [4], sligh ly
beyond he sup aha monic ange (2 kHz o 150 kHz).
Ins umen T ans o me s (ITs) a e collec i ely he de ices
o measu emen o ol age and cu en a LV and MV le els
wi h inc easing equisi es o bandwid h and accu acy h ough
he yea s, ollowing he de elopmen and upda e o IEC 61869
s anda ds [5]. Focusing on cu en measu emen s, a wide
ange o senso s may be conside ed unde he gene al “IT”
classi ica ion, bo h ac i e and passi e [6]–[8].
The e i ica ion and calib a ion o cu en senso s comp ises
applying o complex wa e o ms, a undamen al and high-
equency componen s supe posi ion [9]. The esponse wi h
a ansien DC o se has been long s udied, especially o
con en ional cu en ans o me s, as i a ec s eliabili y o
ope a ion o he connec ed p o ec ion elay [7]. On he o he
hand as ansien s may o igina e om ligh ning phenomena,
swi ching manoeu es and semiconduc o commu a ion wi hin
powe con e e s. The la e a e becoming mo e and mo e
common, wi h he widesp ead deploymen o enewables and
he use o SiC echnology. In [10] i is demons a ed ha
when using a LEM Hall-e ec senso in he DC link o
a SiC con e e wo noise con ibu ions wi h di e en ime
scales ake place: a apid di ec ly coupled h ough pa asi ic
capaci ance e m wi h du a ion o some hund eds ns and a
seconda y slowe noise e m coupled on o he in e nal Hall-
e ec senso , wi h dynamics o some µs.
On his opic he 22NRM06 ADMIT P ojec [4], [11] was
ecen ly unded in he Eu opean Pa ne ship in Me ology
amewo k. The p ojec aims a iden i ying sui able indexes
and pa ame e s o de ine he accu acy o ol age and cu en
ITs and s udying es and measu emen ins umen a ion and
se ups wi h an ex ended equency capabili y up o 150 kHz.
A signi ican example o such cha ac e iza ion o cu en
senso s [9] shows supe posi ion o low- and high- equency
es cu en wa e o ms by using a sui ably a anged summing
ci cui d i en by wo ansconduc ance ampli ie s (TAs) lim-
i ed howe e o 100 A. TA dis o ion is no add essed, om
which he p esen wo k ha p oposes a obus a chi ec u e o
a gene al pu pose ampli ie wi h simila capabili y, bu wi h
lowe dis o ion and eliable ansien beha iou . The a chi ec-
u e is scalable, so ha e en mo e demanding exigencies may
be ul illed.
The es o he pape p esen s he equi emen s and design o
he ampli ie in Sec ion II and he i s expe imen al esul s o
cha ac e iza ion o he p o o ype in e ms o s abili y, ansien
esponse and dis o ion in Sec ion III.
II. AMPLIFIER REQUIREMENTS AND DESIGN
A. Requi emen s
Some equisi es o bandwid h, ansien esponse and dis-
o ion may be de i ed:
• equency band ex ended up o 150 kHz, an uppe co ne
equency de ine wi h mo e han one c i e ion, namely
a enua ion, signal dis o ion and ansien esponse;
•maximum dis o ion o <1 % o allow IT es s wi h clean
sine signals;
• ansien esponse exemp om oscilla ions and o e -
shoo s, wi h ise ime complying wi h he 150 kHz band-
wid h wi h a ma gin, be e han 1µs.
Fo he selec ion o he a chi ec u e and i s design, besides
he pe o mance equi emen s abo e, he cha ac e is ics ha
mus be p i ileged a e:
•s abili y, e i ied by s essing ex eme condi ions, such as
la ge dV/d and capaci i e load;
• he mal and elec ical obus ness, selec ing de ices wi h
la ge powe dissipa ion and la ge ol age ole abili y, de
ac o ensu ing a la ge SOA (sa e ope a ing a ea);
•scalabili y, no only achie ed by he la ge ol age ole -
abili y, bu also by he possibili y o adding elemen s o
he ou pu s age wi hin i s d i ing capabili y.
B. High-le el design
The schema ic o he ampli ie is shown in Fig. 1.
S abili y and obus ness call o an emi e - ollowe ou pu
s age ha ea u es a low ou pu impedance and almos uni a y
ol age gain. Cons an ou pu cu en would be achie ed
by selec ing a common-base a chi ec u e, eaching a la ge
ol age gain and ou pu impedance. Howe e , s abili y would
be a majo issue, elying on a ca e ully designed eedback
using a ious compensa ing ci cui s, and equi ing ex ensi e
e i ica ion o challenging eac i e loads and pa asi ics.
The mal and elec ical obus ness a e pu sued by selec ing
la ge-powe ansis o s o he ou pu (FJA4213 [12] and
FJA4313 [13]), wi h 250 V o maximum collec o ol age,
130 W o dissipa ion and a ansi ion equency o 30 MHz,
ensu ing a cu en gain h e equal o he nominal DC gain o
100 up o 300 kHz.
Each NPN-PNP ou pu ansis o pai can handle 3 A,
in ended as s eady DC signal, eaching 6 Apk o AC sig-
nals he e al e na ing conduc ion be ween he NPN and PNP
de ices. La ge cu en is allowed in ansien condi ions. A
ade-o o he emi e esis o s (R11,R12, e c. and R21,R22,
e c.) was achie ed, selec ed as 0.22 Ω and 5 W dissipa ion.
They a e biased and d i en by he d i ing pai (2SC4793
[14] and 2SA1837 [15]), ha a e mode a ely as ansis o s
wi h a ansi ion equency o 50 MHz o he designed bias
cu en o 15 mA, ensu ing la ge bandwid h e en a low
collec o cu en . This is an impo an poin wi h me ological
ele ance o a oid de e io a ion o wa e o m quali y, while
swinging om low o high cu en alues i a he bandwid h
limi s o 150 kHz.
Biasing o he ou pu ansis o s may be kep low o a oid
powe consump ion (i will be iden i ied as “1.4 mA diode
bias cu en ”, leading o abou 18 mA o 20 mA h ough each
ansis o pai and a inal empe a u e o 28 ◦C) o inc eased
o educe dis o ion a high equency (“2.7 mA diode bias
cu en ” condi ion, leading o abou 150 mA h ough each
ansis o pai and a no load empe a u e o 50 ◦C). The ou pu
ansis o pai s do no ea u e signi ican a ia ion o hei
ansi ion equency wi h cu en .
The biasing diodes a e epoxy glued on he mechanical sup-
po o he 5 ou pu ansis o pai s, ollowing hei empe a u e
condi ions o imp o e s abili y wi h empe a u e.
The p eceding s age 1 is designed a ound wo OAs in
in e ing gain con igu a ion o be e s abili y: due o he
uni a y gain o s age 2, he d i ing Ope a ional Ampli ie (OA)
mus swing he en i e desi ed ou pu ol age, so a ±40 Vpk
OA was chosen. The o he eason o selec ing he OPA453 is
ha i has be e dis o ion han i s companion OPA452 (abou
−70 dB a 50 kHz con as ed o only −50 dB).
Simila ly, ano he compe i o migh ha e been he
ADHV4702-1 [16], used in [17] o es a ol age IT, ha
eaches ±100 Vpk, bu whose ha monic dis o ion goes abo e
−70 dB al eady a 10 kHz wi h a s eep slope.
The OPA453 equi es a minimum gain o 5 o s abili y,
and i was assigned a gain G5= 10, se ing he p eceding
OA o ±2 Vpk ou pu swing, when he maximum ±20 Vpk
ou pu is equi ed. This inpu OA is an OPA27 o a ma e
o bandwid h, negligible dis o ion and a ailabili y in PDIP
package o he p o o ype. I ’s gain is G6= 5, gua an eeing
s abili y and use o low-ampli ude signal gene a o s.
The wo OAs wi h such gains gua an ee a bandwid h o
1 MHz, so wi h ma gin on he 150 kHz a ge . A limi ing
ac o is he una oidable phase o a ion ypical o OAs ha
a 100 kHz app oaches 90 deg: ca e was aken o s abili y
ma gin when c ossing he 0 dB line, al hough, we will see, i
may occu in case o as ansien exci a ion.
Conside ing he ansien esponse, he wo OAs we e also
selec ed o p o ide a slew a e o some V/µs:1.9 V/µs o he
OPA27 and 7 V/µs, ensu ing a eliably as esponse down o
abou 1µs, wi hou se iously a ec ing s abili y.
C. De ailed design
Some u he de ails a e p o ided indica ing mo e accu a ely
bias quan i ies, ma gins and elec ical beha iou .
The a ge 3 Apk maximum emi e cu en o each pai
(compa ible wi h he SOA o he ou pu ansis o s and p o-
iding 15 A in o al) ansla es in o a 30 mA peak base cu en ,
assuming h e = 100 is p ese ed. The d i ing pai eeds he 5
ou pu s ages in pa allel wi h a a ge peak cu en o 150 mA
plus some addi ional cu en h ough R31 and R32.
The base cu en equi ed by he d i ing ansis o s is hus
abou 1.5 mA o 2 mA and his mus be p o ided by he ou pu
o s age 1 (Io1). An impo an poin is ha , while eeding
his d i ing cu en , he ins an aneous diode cu en a ies,
causing some addi ional dis o ion. This dese es a en ion o
u he imp o e dis o ion pe o mance and may be add essed
by designing a cons an cu en sou ce o eplace R41 and R42.
This cu en sou ce mus sou ce a la ge bias cu en , la ge
han Io1, and able o wi hs and he ull ol age swing. A ci cui
exploi ing N and P JFETs (junc ion ield-e ec ansis o s)
[18] is ou o ques ion, as hey do no go abo e 30 V o 40 V
o d ain ol age. This will be pa o he design op imiza ion
in he cou se o he p ojec .
I is unde lined ha he ou pu s age 2 dis o ion is educed
when i will ope a e in closed loop by he a io o he open-
Fig. 1. Schema ic o he ampli ie showing s age 1 wi h an Ope a ional Ampli ie (OA) a chi ec u e and s age 2 wi h a cascaded emi e -
ollowe a chi ec u e.
loop o closed-loop ol age gain o he d i ing OA s age.
As a consequence o he eedback and OAs phase o a ion,
he absolu e s abili y o he emi e - ollowe powe s age is
somewha de e io a ed, al hough he design ma gins a e such
o ensu e a 150 kHz use ul ange and 0.2µs ise ime.
III. EXPERIMENTAL CHARACTERIZATION
The esul s epo ed and commen ed in his sec ion p o ide
expe imen al con i ma ion o he ollowing poin s:
•nominal ampli ie gain, namely a io o ou pu and inpu
ol ages (Voand Vi) a low equency o a ious ope -
a ing condi ions;
•dis o ion o he ou pu wa e o m a a ious inpu signal
equencies a ound he designed dis o ion co ne e-
quency (wi h his e m i is mean no he abili y o he
ampli ie simply o deli e he ou pu ol age wa e o m
wi h a sui ably la ge ms alue, bu o deli e wi hou
app eciably wo sening wa e o m dis o ion);
•sys em poles and ull bandwid h, obse ing he beha iou
when exci ed wi h a s ep signal wi h adjus able ise ime.
Resul s o each poin a e epo ed in he ollowing in he
espec i e subsec ions.
A. P elimina y check
The inal s age 2 o he ampli ie , a e being assembled,
was p elimina y checked o co ec biasing and symme y o
he 5+5 ou pu powe ansis o s and o he d i ing ansis o
pai . A ew a emp s we e aken o a ying he cu en in he
bias diodes, as well as he s abili y s empe a u e was checked
o e abou 30 minu es o ope a ion wi h a empe a u e senso
ixed o he main hea sink in p oximi y o he 3 d ansis o .
The DC bias measu emen was aken a e a wa m up o
5 minu es and hen a e ano he 30 minu es o ope a ion
Fig. 2. Ve i ica ion o he DC bias a 5 and 35 minu es om swi ch
on, co esponding o 20 ◦C o 22 ◦C(ini ial empe a u e alue wi h
s ill g adien among he de ices) and 28 ◦C( egime empe a u e a e
30 minu es, using he 1.4 mA diode bias), shown a op and bo om
nex o each ansis o .
wi h he hea sink no comple ely as ened wi hou he inned
hea sink ( ha equi es he box closed o wo k and impedes
his ype o measu emen s).
These measu emen s e e o he con igu a ion wi h 1.4 mA
diodes bias causing, as seen du ing he es s, sligh ly highe
dis o ion. The emedy is doubling diode cu en o 2.7 mA
ha makes he cu en h ough he powe ansis o s jump o
abou 150 mA and he no-load empe a u e o abou 45 ◦C.
Resul s a e shown in Fig. 2.
B. Low- equency gain
By cons uc ion he emi e - ollowe s age 2 has a ol age
gain app oaching uni y. Tes s e i ied a gain o 0.98 wi h a load
o 24 Ω and abou 5 V ms o ou pu ol age. Inc easing he
Fig. 3. Th ee loads used o e i ica ion o ansien esponse and
high- equency esponse.
powe abso p ion wi h a 21 imes lowe load esis ance alue
and co espondingly a 21 la ge ou pu cu en , he ol age
gain educes o 0.91, due o a ious ol age d ops along he
s uc u e (p esen ly buil wi h a wi ed h ough-hole PCB).
Closed-loop ope a ion also compensa es o such ol age
d ops. When closing he loop wi h s age 1 wi h an o e all
gain o 50, he combina ion o he OPA453 and he ou pu
s age 2 achie es a gain o 10 wi hin he accu acy o he
wo gain esis o s (R51 = 2.62 kΩ and R52 = 26.2 kΩ, he
la e sized o handle he la ge ou pu swing wi h a lowing
cu en o abou 1 mA). The OP27 s age was designed wi h
a gain o 5 achie ed wi h R61 = 1 kΩ and R62 = 4.99 kΩ.
A measu emen using an oscilloscope lea es an unce ain y
o abou 0.3 % a uni a y co e age ac o due o he e ical
accu acy e en a e co ec ion. In he p esen case dis o ion
measu emen s a e ela i e and concen a ed in a ew oc a es
abo e he undamen al, educing he e o due o lack o
la ness.
C. S abili y and ansien esponse
The s ep esponse was e i ied wi h a es case wi h a
s ongly capaci i e load (indica ed as 24 Ω + 22 nF) in Fig. 3.
Tes s o he s age 2 alone we e ca ied ou by con olling he
ise ime (RT) o he applied s ep signal, aking measu emen s
a 10 µs,1µsand 100 ns, he la e exci ing a combina ion
o he s ay induc ance o he se up and s ay capaci ance o
he ou pu ansis o s. Resul s a e shown in Fig. 4 o he
h ee di e en RT alues. I is hus o some impo ance o
con ol he applied RT when using he ampli ie o ansien
signals wi h capaci i e loads, in which case he beha iou is
ideal wi h almos no peaking ( isible only a he as es RT
alues). As a no e, he oscilla ion in he black cu e is due o a
wi ing p oblem o he oscilloscope p obe g ound, bu does no
pass h ough he ampli ie , as shown by he ou pu esponse
(blue cu e). The inal s age does no use a connec o bu
solde ed wi es, ha we e b ough ou side o abou 15 cm; he
oscilloscope p obe g ound was hen connec ed o he g ound
e minal o he o he p obe a he ampli ie ou pu , adding
ano he 20 cm, ha is he physical dis ance be ween inpu and
ou pu sides. As a ma e o ac , he oscilla ion is no isible
a he ou pu al hough i alls well in he ope a ing bandwid h
o he ampli ie , as i is no a eal signal ed o he ampli ie .
The es s ha e been epea ed o he comple e ampli ie
including s age 1, eaching an o e all gain o 50. Using s age 1
has bene i s o gain accu acy and dis o ion educ ion, bu
in oduces una oidably some phase o a ion and chances o
ins abili y (due o he de e io a ion o he open-loop gain cu e
o he OAs wi h inc easing equency and he in luence o he
in oduced eedback). I is impo an hus o es s abili y and
he es s we e ca ied ou again a 10 µsand 1µs, wi h he
as ise- ime es limi ed o 500 ns, o de e mine he limi s o
usabili y in ansien condi ions.
Tes esul s a e shown in Fig. 5, whe e he inpu is a i i-
cially mul iplied by he gain (50), o ha e be e o e lapping
inpu and ou pu cu es. A sligh delay is isible, associa ed
wi h he OA esponse.
The beha iou is almos ideal down o 1µsRT, co espond-
ing o 320 kHz o equi alen −3 dB bandwid h. Tole able
o e shoo cha ac e izes he esponse wi h a hal ed RT (a
500 ns) co esponding o 640 kHz o bandwid h ( ha was
es ima ed assuming a B= 1/(π )). A sligh oscilla ion is
isible indica ing a 2 MHz dampened esonance.
D. Dis o ion
Dis o ion was e alua ed in wo di e en ways, by subjec -
ing he inal s age 2 a a ious loading and bias cu en le els.
Fi s , he sinusoidal es wa e o m was p o ided by a Siglen
mod. 6022 wa e o m gene a o (WG) ha has abou −60 dBc
o −70 dBc o spu ious ee dynamic ange depending on he
ou pu le el, wi h he second ha monic always showing as
he highes one. Inpu and ou pu signals we e measu ed wi h
a Tek onix mod. MSO2014B, whose addi ional dis o ion is
no compensa ed, bu is he same o all channels. The es
equencies a e 50 kHz,150 kHz,250 kHz and 350 kHz. The
ha monics a e collec ed up o o de 6 and displayed wi h
co ec ion by sub ac ion o he WG dis o ion.
Mo e accu a e es s we e hen ca ied ou cleaning he WG
ou pu wi h a cus om designed Chebyshe passi e low-pass
il e o o de 9. The small ole ances and app oxima ions
in he alues o he passi e componen s led o a equency
esponse ha sligh ly de ia es owa ds ha o an ellip ic il e ,
con ibu ing sligh ly highe a enua ion and s eepe esponse,
so abou 64 dB a he 2nd ha monic. A pho o and he measu ed
equency esponse (as sca e ing Spa ame e s measu ed wi h
an An i su MS2036C VNA) o he 100 kHz ealisa ions a e
shown in Fig. 6.
Resul s a e epo ed in he ollowing igu es. Resul s o
24 Ω load and 1.4 mA diode bias, using sub ac iona e shown
in Fig. 7. The applied ol age was 14 Vpp, co esponding o
abou 4.7 V ms, a signi ican ope a ing poin o he ampli ie .
Resul s show jux aposed he spec al componen s o he
inpu and ou pu signals and he dis ance a each ha monic
equency indica es quali a i ely he dis o ion in oduced by
he ampli ie . Nume ic esul s a e shown in Table I.
TABLE I. Es ima ed dis o ion le els in % wi h p elimina y es s.
F eq. Ha monics
(kHz) 2nd 3 d 4 h
50 0.071 0.067 0.052
150 0.073 0.032 0.046
250 0.11 0.09 0.07
350 0.23 0.20 0.11
Mo e accu a e es s we e epea ed using he Chebyshe il e
and eplacing he oscilloscope wi h a Picoscope mod. 4424
Fig. 4. S ep unc ion esponse o he s age 2 alone wi h di e en ise- ime alues: 10 µs(le ), 1µs(cen e), 100 ns ( igh ); inpu and ou pu
signals black and blue, espec i ely.
Fig. 5. S ep unc ion esponse o he comple e ampli ie (cascaded s age 1 and s age 2) wi h di e en ise- ime alues: 10 µs(le ), 1µs
(cen e), 500 ns ( igh ); inpu and ou pu signals black and blue, espec i ely.
(a)
(b)
Fig. 6. Chebyshe 9 h o de low-pass il e : (a) pho o o he PCB,
(b) measu ed S pa ame e s o he 100 kHz e sion ( op channel in
pho o) used in his wo k.
Fig. 7. Dis o ion es ed a 24 Ω load, 1.4 mA diode bias cu en , and
4.7 V ms ou pu ol age) o he ou es equencies (black 50 kHz,
blue 150 kHz, ed 250 kHz and g een 350 kHz), using a equency
esolu ion o 1/3 o he undamen al. Do and ci cle indica e inpu
and ou pu spec um.
[19]. The esul s o a es ca ied ou a 100 kHz (a ailable
in he implemen ed il e ) a e shown in Fig. 8. The esul ing
la ges ha monic is he 2nd a 0.079 %.
Conside ing ha a his de elopmen phase he es s we e
ca ied ou on he ou pu powe s age 2 alone, he obse ed low
dis o ion is pa icula ly ema kable. I is indeed a pe o mance
ha is be e han a op-o - ange ampli ie , like he Cla ke
Hess mod. 8210 and 8220 ansconduc ance ampli ie s [20],
a commonly used equipmen by esea ch and me ological
ins i u es [9]. The manu ac u e [20] in ac epo s −60 dB
o THD up o 20 kHz and −40 dB o THD up o 100 kHz,
Fig. 8. Dis o ion o 24 Ω load, 1.4 mA diode bias cu en and
4.55 V ms ou pu ol age a 100 kHz measu ed using cleaned WG
signal and 12-bi Picoscope oscilloscope.
whe eas igu es in Table I amoun o be e han −60 dB up
o 150 kHz. In addi ion, he ol age compliance o he Cla ke
Hess o 7 V is mo e o less in line wi h he maximum ou pu
ol age swing o he p esen ed p o o ype o 20 Vpk.
Some es s we e epea ed o he comple e ampli ie , b ing-
ing he wa e o m gene a o o a lowe dis o ion hanks o
he equi ed lowe ou pu ol age ampli ude hanks o he
in oduced gain o 50. The in oduced eedback is expec ed
o p o ide educ ion o dis o ion ha canno be p esen ly
es ima ed by sub ac ion: a low-pass il e wi h s eep oll-o
is cu en ly designed o a clean undis o ed sinusoidal signal.
IV. CONCLUSIONS
The design p inciples ha e been discussed o a low-
dis o ion ampli ie able o co e he equency ange o he
IT expe imen al e i ica ion up o 150 kHz, and possibly up
o 500 kHz, a e ca e ul e i ica ion o he p o o ype and
necessa y adjus men s.
The ampli ie is composed o a e y linea class-AB ou pu
s age able o sou ce a maximum ±20 Vpk wi h a ±15 Apk
cu en in he p esen implemen a ion, ha allows la ge cu -
en is possible o limi ed amoun s o ime, limi ed only by
in e nal dissipa ion. La ge ou pu ol age is possible up o
abou ±40 Vpk.
Tes s ha e been ca ied ou a ±6.7 Vpk and ±5.8 Apk due
o limi a ions o he a ailable powe supply.
Bandwid h e i ica ion was ca ied ou no only by mea-
su ing he ampli ude esponse (almos la up o 1 MHz), bu
e alua ing dis o ion, ha esul ed in <0.1 % up o abou
150 kHz. The ansien esponse o a s ep ol age signal also
indica es good s abili y and e y as ise ime, ollowing he
inpu signal wi hou app eciable delay and limi ed o e shoo
down o 500 ns (a −3 dB bandwid h o 640 kHz).
Fu u e de elopmen is he demons a ion o he scalabili y
o la ge cu en by pa alleling mo e ou pu s ages, including
he d i e s age wi h he 2SC4793 and 2SA1837 ansis o pai .
The inc ease o he ou pu ol age is limi ed by wo ac o s:
he maximum ou pu ol age o he powe OA s age (p esen ly
implemen ed wi h an OPA 453) and he SOA o he ou pu
ansis o s. By simply scaling in cu en , he limi ed ou pu
ol age is compensa ed by means o an ou pu ans o me .
In addi ion, he o e all dis o ion can be sligh ly imp o ed
by op imizing he pa ame e s and ope a ing poin s, possibly
keeping i below 0.1 % consis en ly.
ACKNOWLEDGMENT
The p ojec 22NRM06 ADMIT ecei es unding om he
Eu opean Pa ne ship on Me ology, co- inanced om he
Eu opean Union’s Ho izon Eu ope Resea ch and Inno a ion
P og amme and by he Pa icipa ing S a es.
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