Hys e esis in O ganic Elec ochemical T ansis o s: Dis inc ion o
Capaci i e and Induc i e E ec s
Juan Bisque *
Ci e This: J. Phys. Chem. Le . 2023, 14, 10951−10958
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ABSTRACT: O ganic elec ochemical ansis o s (OECTs) a e e ec i e de ices o
neu omo phic applica ions, bioelec onics, and senso s. Nume ous epo s in he li e a u e
show pe sis en dynamical hys e esis e ec s in he cu en − ol age cu es, a ibu ed o he
slow ionic cha ging o he channel unde he applied ga e ol age. He e we p esen a model ha
conside s he dominan elec ical and elec ochemical ope a ion aspec s o he de ice based on
a he modynamic unc ion o ion inse ion. We iden i y he olume capaci ance as he
de i a i e o he he modynamic unc ion, associa ed wi h he chemical capaci ance o he
ionic−elec onic ilm. The dynamical analysis shows ha he sys em con ains bo h capaci i e
and induc i e hys e esis e ec s. The induc o esponse, which can be obse ed in impedance
spec oscopy, is associa ed wi h ionic di usion om he su ace o ill he channel up o he
equilib ium alue. The model e eals he mul iple dynamical ea u es associa ed wi h speci ic
kine ic elaxa ions ha con ol he ansien and impedance esponse o he OCET.
O ganic elec ochemical ansis o s (OECTs) ha e gained
conside able a en ion due o hei unique capabili y o
ansduce bo h elec onic and ionic signals,
1,2
making hem well-
sui ed o a ious applica ions in he ealms o neu omo phic
sys ems,
3−6
bioelec onics,
7,8
and senso s.
9
These e sa ile
h ee- e minal de ices consis o an o ganic mixed ionic
elec onic conduc o (OMIEC)
10
se ing as he channel
connec ing he sou ce and d ain elec odes. An elec oly e
unc ions as he ion ese oi posi ioned be ween he channel
and he ga e elec ode.
11
In OECTs, he con ol o he d ain−sou ce bias (ud) emains
cons an , while a ia ions in he ga e−sou ce ol age (V) go e n
he low o mobile ions be ween he OMIEC channel and he
elec oly e. This modula ion o he ions leads o changes in he
doping s a es and he conduc i i y o he OMIEC channel.
Consequen ly, OECTs a e olume ic de ices, endowing hem
wi h high ansconduc ance, which esul s in subs an ial
ampli ica ion capabili ies and enables hem o ope a e e ec i ely
a ela i ely low ol ages.
To measu e he cu en − ol age cha ac e is ics a ol age scan
o he o m
= +V V
0
(1)
is applied. The pa ame e is he ol age sweep eloci y, and V0
is he ini ial ol age. One conside s a nega i e ( e e se, < 0)
sweep ollowed by a posi i e sweep ( o wa d, > 0) ha e u ns
o he s a ing ol age. Cha ac e is ic esul s by Leo and co-
wo ke s a e shown in Figu e 1.
12
An impo an hys e esis e ec
is obse ed, i.e., a misma ch be ween he o wa d and backwa d
scans in he ans e cu es. Hys e esis has been epo ed widely
in OECTs
11,13,14
and a ibu ed o a delay o ion cha ging.
15
In his wo k, we p esen a model ha accoun s quan i a i ely
o di e en hys e esis e ec s in OECTs. We s a om he basic
amewo k o he ansis o cu en es ablished by Be na ds and
Mallia as,
16
and we conside some addi ional key aspec s. Fi s ,
diso de p oduces a b oad densi y o s a es (DOS) in he
OMIEC, which can be ea ed expe imen ally om he
p ope ies o he chemical capaci ance.
17,18
In addi ion, we use
p e ious insigh s on he cha ac e iza ion o induc i e and
capaci i e hys e esis ha ha e been desc ibed o pe o ski e
sola cells and mem is o s.
19−22
This model allows us o classi y
di e en ypes o hys e esis unde o wa d and back sweep
cycles. In addi ion, we de elop he associa ed model o
impedance spec oscopy ha p oduces a comple e diagnosis
o he induc i e ea u es due o anspo e ec s. We assume udis
small, enabling essen ially uni o m hole ca ie densi y pin he
channel. A numbe o ad anced modeling me hods can be
applied o simula e ealis ic ansis o measu emen s (inhomo-
geneous ca ie dis ibu ions, deple ion, sa u a ion cu en ,
la e al cu en s, aps, swelling, and so o h),
23−26
bu he e we
educe he geome ical ea u es o he simples si ua ion in o de
o ob ain he main physical causes o he ansien dynamics
inhe en o he OECT con igu a ion.
We ema k ha Figu e 1 shows wo dis inc ypes o
hys e esis. Kine ic hys e esis depends on he scan a e, and he
Recei ed: Oc obe 31, 2023
Re ised: No embe 21, 2023
Accep ed: No embe 28, 2023
Published: Decembe 1, 2023
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ex en o hys e esis is enhanced o as e scans. This beha io is
he opic o his Le e . On he o he hand a slow scan a es
he e is a bis able beha io ha will no be conside ed he e.
Acco ding o he scheme in Figu e 2 he e a e wo
componen s o he cu en .
16
The i s is he hole cu en ac oss
he channel
=I wdqp u
L
p
d
1
(2)
He e qis he elemen a y cha ge and μpis he mobili y. The
densi y o holes is p oduced by he inse ion o anions wi h
olume densi y X; hence
=I B X
d1
(3)
whe e we ha e de ined
=Bwd
Lq u
dpd
(4)
The second componen o he cu en is caused by he
inse ion o ca ions om he elec oly e by he ga e ol age ha
p oduces he en ance o he same numbe o holes om he S
elec ode
=I wLdq X
d
d
2
(5)
In o al we ha e he conduc ion cu en
=I B X Q X
d
d
c d
(6)
whe e Q =wLdq.Equa ion 6 is equi alen o ha o mula ed by
Be na d and Mallia as.
16
Ano he impo an e ec is he ole o he elec oly e. The
applied ol age Vis di ided in o wo componen s
= +V R I u
s o g
(7)
Rsis he se ies esis ance o he solu ion, and ugis he ol age
applied o he o ganic ilm, which causes a change o he Fe mi
le el (elec ochemical po en ial). The o al cu en is
= +I B X Q X
Cu
d
d
d
d
o s
g
d
(8)
He e we ha e added o Ic he capaci i e cu en due o he
cha ging o he capaci ance CSa he solu ion/ ilm in e ace,
which has a cons an capaci ance simila o a Helmhol z
capaci ance.
As men ioned, a change in ugmodi ies he amoun o inse ed
anions. In equilib ium, he e is he he modynamic unc ion
Xeq(ug) ha s a es he ex en o in e cala ion o ions acco ding o
he ol age in he ilm. This unc ion can be ob ained by di e en
elec ochemical me hods,
27
and i has been amply s udied o
conduc ing polyme s (wi h he s a is ics o pola ons and
bipola ons)
28,29
and o ganic ansis o s.
30,31
As a signi ican
example o he ionic he modynamic unc ion we ecall he
F umkin unc ion ha has been widely used in Li in e cala ion
s udies:
32,33
Ä
Ç
Å
Å
Å
Å
Å
Å
Å
Å
É
Ö
Ñ
Ñ
Ñ
Ñ
Ñ
Ñ
Ñ
Ñ
=u u k T
q
X
Xg Xln 1( 0.5)
e
B
(9)
He e kBTis he he mal ene gy and gis he adimensional
in e ac ion pa ame e ha accoun s o he in e ac ions be ween
in e cala ed ions in he mean ield app oxima ion.
34
Ano he quan i y o g ea signi icance o he cha ging
p ope ies is he chemical capaci ance o he ions.
17,18
This is
ob ained by he de i a i e o he he modynamic unc ion, wi h
espec o he elec ochemical po en ial.
Figu e 1. (a) Bias s ess s abili y measu emen in an OECT whe e he PEDOT:Tos ilm is annealed o 1 h a 70 °C. The measu emen spans
app oxima ely 6 h, wi h a eco e y measu emen showing no e idence o de ice deg ada ion. (b) Demons a ion o a scan- a e-dependen ans e
cu e measu emen whe e he inle shows he hys e esis s eng h ψ. The channel wid h (w), leng h (L), and ga e dis ance a e 150, 150, and 50 μm,
espec i ely. The ilm hickness (d) o he bias s ess measu emen is 80 nm and o he scan- a e-dependen measu emen is 119 nm. The d ain−
sou ce ol age (VDS) is kep cons an a −0.2 V. The scan speed o bias s ess measu emen is ∼180 mV s−1. Rep oduced wi h pe mission om
Shameem, R.; Bonga z, L. M.; Weissbach, A.; Kleemann, H.; Leo, K. Applied Sciences 2023, 13, 5754; licensed unde a C ea i e Commons A ibu ion
(CC BY 4.0) license.
12
Figu e 2. Scheme o he ope a ion o he OECT. The g een zone is he
elec oly e, he g ay zone is he OMIEC laye , and he yellow zones a e
he ga e (G), sou ce (S), and d ain (D) elec odes. The anions inse ed
in o he ilm a e he sou ce o elec onic holes ha ca y he cu en .
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=c q X
u
d
d
eq
g
(10)
Fo example, he F umkin model o eq 9 gi es he ollowing
esul
i
k
j
j
j
j
y
{
z
z
z
z
= +cq
k T X X g
1
(1 )
2
B
1
(11)
The quan i y cμis a olume ic densi y, and he o al chemical
capaci ance is
= =C Ldwc Q X
u
d
d
eq
g
(12)
The chemical capaci ance is eadily measu ed by ol amme y
o impedance spec oscopy.
35−37
Indeed, he ex en o cha ging
o elec ochemical ansis o s is usually ob ained by an
in eg a ion o he chemical capaci ance, as ollows
=X u c u( ) d
eq g u
u
g
g
0
(13)
On he o he hand, he cha ging o he polyme ilm can be
s a ed in e ms o he DOS g(E) as a unc ion o ene gy E
=X u g E F E qu E( ) ( ) ( , )d
eq g u
E
g
g
0
(14)
whe e F(E,qug) is he Fe mi−Di ac he mal occupa ion
unc ion o elec ochemical po en ial EF=qug. Applying eq
10, i is ob ained
36,37
=c qg qu( )
g
(15)
The e o e, he chemical capaci ance p o ides a di ec measu e o
he DOS. Usually in o ganic conduc o s he measu ed
capaci ance shows e y b oad ea u es.
35,38
The dispe sion o
he DOS is a ibu able o diso de in he o m o Gaussian
unc ions and addi ional ea u es.
17,31,37,39
I has been well-
ecognized ha he olume capaci ance C*used in OECT is a
s ong unc ion o he ga e ol age, o en displaying peak alues.
2
This is an in insic p ope y o he chemical capaci ance simply
due o he he modynamic unc ion, e.g., see eq 11.
33
I is only
na u al o iden i y he olume ic capaci ance C* o he mo e
gene al concep o chemical capaci ance Cμ.
The nex aspec o he ansien cu en is he anspo o ions
om he inse ion a he solid/elec oly e in e ace un il he
o ganic laye is homogeneously illed acco ding o he po en ial
ugin he ilm. He e we assume ha he de e minan p ocess is
he di usion o ions wi h a chemical di usion coe icien DX.
40
Acco ding o Fick’s law and he conse a ion equa ion, o a
species o concen a ion nwe ha e
=
n
Dn
x
n
2
2
(16)
Figu e 3. (a) Cu en − ol age cu e and (b) chemical capaci ance. Pa ame e s: L= 10, d= 0.1, w= 1, X0= 100, u0= 0, Vm= 0.2, qμpud= 1. Panels c−
show cu en − ol age cu es a di e en ol age sweep a es ( ) and he e e ence equilib ium cu e as in panel a. (c) Hys e esis due o se ies
esis ance, Rs= 1, Cs= 1000, X=Xeq. (d) Hys e esis due o cons an capaci ance, Rs= 0.1, Cs= 100, X=Xeq. (e) Hys e esis due o chemical capaci ance,
Rs= 0.1, Cs= 1, τd≈0. ( ) Hys e esis due o induc i e e ec o ions, Rs= 0.1, Cs= 1, τd= 100.
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Ins ead o sol ing he ull anspo model, we use he
app oxima ion o eq 16 ha con ains he main dynamical
p ope ies:
=
X
DX X
d
d
dX
eq
2
(17)
The cha ging p ocess will be comple e when X=Xeq is
e e ywhe e in he o ganic laye . We exp ess eq 17 as
=
X
X X
d
d
d eq
(18)
whe e
=
d
D
d
X
2
(19)
is he cha ac e is ic ime o e ical ionic di usion along he ilm
hickness.
Du ing he di usi e cha ging, he concen a ion is inhomoge-
neous in he e ical di ec ion. Be na d and Mallia as
16
in oduce a ac o ≈1/2 ha gi es he a e age o he mobile
cha ge along he ilm hickness. Howe e , since he p oblem can
be sol ed igo ously by using eq 16, we do no in oduce such a
ac o .
Now eqs 7,8, and 18 o m a comple e sys em ha can desc ibe
he ansien beha io o he o ganic ansis o in he he
measu emen condi ions ha ha e been commen ed in he
in oduc ion. We ema k ha eq 18 has he s uc u e o a
chemical induc o .
41
When combined, eq 8 and 18 o m a
sys em ha has been desc ibed o he hys e esis p ope ies o
halide pe o ski e de ices.
42
In o de o illus a e he dynamical p ope ies o he model we
choose he ollowing o m o he equilib ium unc ion:
=X u X u( ) ( )
eq g g0
(20)
He e, X0is a maximal densi y and
=
+
u e
( ) 1
1
gu u V( )/
g m0
(21)
is a unc ion ha a ies be ween 0 and 1. u0is he ol age o hal
occupancy, and Vmis a ol age ha indica es b oadening o he
dis ibu ion. This unc ion is chosen o con enience, o show
he dynamical p ope ies o he model. Fo he ealis ic
he modynamic unc ions we e e he eade o he li e a u e
men ioned abo e.
Ha ing se he o m o he he modynamic unc ion, we can
illus a e he di e en p ope ies o he model. Fi s , we no e ha
he equilib ium cu en is
=I B X
eq d eq
(22)
This is shown in Figu e 3a. In he simula ions, we use numbe s
wi hou uni s since he poin o he s udy is o es ablish he main
classes o hys e esis. The calcula ion o he chemical capaci ance
p o ides he esul
=cqX
V (1 )
m
0
(23)
This is shown in Figu e 3b. The shape is a peak ha
app oxima es he cha ac e is ic beha io o capaci ance in
OCETs.
2
We ema k ha o any o m o he Xeq(ug), he numbe o
ca ie inc eases wi h he ol age, due o eq 13, and he
equilib ium cu en inc eases wi h he ol age, as ound also in
mos li e a u e epo s such as hose o Figu e 1.
12,14
Howe e , i
has also been epo ed in he li e a u e ha he cu en dec eases
wi h he ol age,
38
causing a nega i e esis ance ha is impo an
o a i icial neu on sys ems.
5,43
This e ec is o en due o a
mobili y ha depends on he ol age (o he ca ie
concen a ion)
17,18,29,44
and will no be u he conside ed
he e, as we es ic ou a en ion o a sys em wi h cons an hole
mobili y, μp.
Based on he gene al equa ions o he model, we explo e he
di e en causes o hys e esis.
We i s assume ha ion cha ging is as so ha X≈Xeq and
neglec he se ies esis ance. Then we ha e
= + +I B X C C
o d eq s
(24)
This esul shows wo e ms o pu ely capaci i e hys e esis. The
cu en is highe han equilib ium cu en o he o wa d sweep
and lowe o he e e se sweep. Fo he cons an capaci ance
he cu en is shown in Figu e 3d. On he o he hand he
capaci i e cu en due o cha ging he chemical capaci ance is
shown in Figu e 3e. We obse e ha he ol amme y eco ds
he DOS o Figu e 3b. This esul is amply epo ed in he
li e a u e as commen ed be o e.
31
In Figu e 3e he capaci i e
cu en is added o he d i cu en . To measu e he chemical
capaci ance alone, we can simply se ud= 0 o supp ess he la e al
cu en . I is also impo an o ema k ha capaci i e cu en is
p opo ional o he scan a e, as is well-known in elec o-
chemis y.
45
Nex we igno e he capaci i e e ec bu in oduce a
conside able se ies esis ance. By eqs 7 and 8we ob ain
= I
uB X I
d
d
s
o
g
d eq o
(25)
He e we ha e de ined he ime
=R C
s s s
(26)
Equa ion 25 indica es ha he cu en equi es a ime τs o
ob ain s a iona y alue Ieq. The esul ing hys e esis beha io is
shown in Figu e 3c. We ema k ha hys e esis is in e ed wi h
espec o capaci i e hys e esis, wi h he o wa d cu en being
smalle han he e e se cu en .
Finally we conside he e ec o all he e ms, including ion
di usion, so ha Xis a a iable now. The cu en equa ion unde
cons an sweep a e is
i
k
j
j
jy
{
z
z
z
= + + I
uI C B X
X
d
d
d
d
s
o
g
o s d u
(27)
He e we ha e in oduced he ime
= =
Q
B
L
u
u
dpd
2
(28)
Clea ly τuis a ansi ime o he la e al d i anspo o holes
along he channel dis ance L. The di usion eq 18 becomes
= X
uX X
d
d
d
g
eq
(29)
This equa ion has he same o m o eq 25, and he hys e esis
e ec shown in Figu e 3 is simila o ha in Figu e 3c. The
chemical induc o s uc u e in eq 29 has been used o explain he
in e ed hys e esis
46
and ime ansien esponses in halide
pe o ski e de ices such as sola cells and mem is o s.
20,22,47,48
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We ema k ha he dynamic hys e esis obse ed in Figu e 1a is
clea ly an in e ed hys e esis. This con i ms ha hys e esis is due
o delay o ion cha ging as no ed in he li e a u e.
15
Acco ding o eq 27 i he scan a e eloci y is e y small, he
in e ed hys e esis is no onse and he sys em emains in
quasiequilib ium as i is being cha ged. Quan i a i ely he onse
o induc i e hys e esis depends on he pa ame e s ,τd, and Vm
as desc ibed in e 19. To e alua e he ela ionship, conside he
ollowing e sion o eq 29, alid o he ail o he dis ibu ion a
ug≫u0:
= X
uX e X
d
d
d
g
u u V
0
( )/
g m0
(30)
The solu ion is X(ug) = Xeq +ΔXwhe e
=XXe
1
V
u u V0 ( )/
m
d
g m0
(31)
The dynamical ΔXand consequen ly he induc i e hys e esis
become signi ican when he scan a e eloci y is la ge han Vm/
τd.
Howe e , we ha e shown ha he se ies esis ance o he
elec oly e can p oduce a hys e esis e ec simila o ha o ion
di usion in he ilm. To dis inguish hese ea u es, we can use
o he measu emen echniques whe e he e ec s espond in
di e en ashion. He e we discuss b ie ly he applica ion o
impedance spec oscopy o he cha ac e iza ion o he dynamic
e ec s o he OECT.
To ob ain he impedance esponse, we calcula e he small
signal expansion o he model eqs 8 and 18, and we apply he
Laplace ans o m, d/d →s, whe e s=iωin e ms o he angula
equency ω. The esul is o med by he sys em
=I C su B X Q sX
o s g d
(32)
=sX c
qu X
d g
(33)
He e he ci cum lex o e ydeno es a small pe u ba ion o any
quan i y y. The calcula ion is desc ibed in e 42. The impedance
unc ion akes he o m
Ä
Ç
Å
Å
Å
Å
Å
Å
Å
Å
Å
Å
Å
Å
Å
Å
É
Ö
Ñ
Ñ
Ñ
Ñ
Ñ
Ñ
Ñ
Ñ
Ñ
Ñ
Ñ
Ñ
Ñ
Ñ
= = + +
+
+
+
Z s V
I
R C s
R L s R
( ) 1 1
o
s s
a a BsC
1
1
(34)
This las unc ion can be ep esen ed as he equi alen ci cui
model o Figu e 4e, whe e he ci cui elemen s in eq 34 ha e he
exp essions
= =RC
L
C u
a
u
pd
2
(35)
= =R
C
d
C D
B
d
X
2
(36)
= =L R L d
C u D
a a d
pd X
2 2
(37)
We obse e ha Rais he ecip ocal o he ansconduc ance,
con aining he igu e o me i Cμμp.
2
Rais associa ed wi h ully
elec onic anspo , while RBis a di usion esis ance o he ions.
Figu e 4. Impedance spec a o di e en se s o pa ame e s. Rs= 0.25, Cs= 1, and he cases (a) Ra= 5, La= 0.1, RB= 5, Cμ= 10; (b) Ra= 1, La= 10, RB=
3, Cμ= 100; (c) Ra= 1, La= 100, RB= 3, Cμ= 10; (d) Ra= 1, La= 3, RB= 1, Cμ= 10. The indica ed ec o s a e he ime cons an s (Ra
−1+RB
−1)−1Cs,RBCμ,
La/Ra. (e) Equi alen ci cui model.
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The impedance model sepa a es he elec onic anspo b anch
(Ra,La), which is induc i e, and he ionic b anch (RB,Cμ) ha
cha ges he chemical capaci ance. The induc o elemen La
p o ides he coupling o ionic−elec onic anspo , as eq 37
con ains bo h he kine ic anspo cons an s o bo h ions (DX)
and holes (μp). This is because he induc o acks he ac ha i
you wish o inc ease he la e al cu en by enhancing he hole
densi y, i is ac ually necessa y o pull he ions om he solu ion.
The classi ica ion o impedance spec oscopy spec a enables
us o de e mine impo an pa ame e s o hys e esis and ime
ansien esponse. The e ec o he se ies esis ance Rsis simply
a la e al displacemen o he spec a as shown in Figu e 4a. The
double a c spec um o Figu e 4a is o med by a combina ion o
he esis ances and capaci o s o he model. The es o he
spec a (panels b−d) show he nega i e capaci ance ea u es
(i.e., he spec a mo e in o he ou h quad an )
22,49−51
ha a e
gene a ed by he induc o elemen . Di e en cases occu
acco ding o he o de ing o he cha ac e is ic imes:
42,47
(b)
double cu ling, (c) la ge chemical induc o ,
52
and (d)
in e media e loop. These induc i e pa e ns ha e been ecen ly
epo ed in impedance measu emen o o ganic ansis o s.
53,54
We sugges ha he induc i e e ec s play a dominan ole in he
OECT and need o be sys ema ically in es iga ed by a
combina ion o ime domain and equency echniques.
The impedance spec oscopy is a small pe u ba ion measu e-
men a ound a s eady s a e, while he cu en measu emen
unde cycling o he ol age p oduces a la ge ol age excu sion.
Despi e he signi ican di e ences, he sepa a ion o he
undamen al p ocesses in o equi alen ci cui elemen s p o ides
signi ican insigh abou hys e esis cha ac e is ics.
22
In o al, we
no e ou elaxa ion phenomena ha can be obse ed in he
hys e esis equa ions (eqs 27 and 29) and co espondingly in he
equi alen ci cui o Figu e 4e:
(a) (Rs,Cs) p oduces he ime cons an τs.
(b) The b anch (RB,Cμ) has he ime τdo e ical di usion
(eq 19).
(c) The induc i e b anch (Ra,La) has he same di usion ime
τd.
42
(d) Addi ionally we obse e ha he c oss coupling (Ra,Cμ)
gi es he ansi ime τuo la e al anspo (eq 28).
These cha ac e is ic elaxa ion imes can also explain di e en
ea u es o ansien phenomena in esponse o ol age
s eps,
47,48
bu his analysis is le o a u u e wo k. The
equi alen ci cui o Figu e 4e is inhe en o he ope a ion o he
OECT, so ha i o ms a “minimal model” ha can be
complemen ed wi h addi ional e ec s as men ioned in he
in oduc ion. Fo example, in he case ha Wa bu g impedances
a e obse ed, he impedance model has o be ex ended including
spa ial di usion by sol ing eq 16.
55,56
In summa y, he hys e esis and mo e gene ally he ime
ansien and impedance cha ac e is ics o he OECT ha e been
desc ibed based on a simple model ha akes in o accoun
se e al e ec s: he ans e sal elec onic and e ical ionic
cu en s, leading o cha ging o he ilm and ion di usion; he
elec oly e esis ance and su ace capaci ance o he ilm; and he
diso de e ec s ha p oduce a speci ic o m o he chemical
capaci ance. By combining hese ac o s, we can classi y di e en
ypes o hys e esis, ei he capaci i e o induc i e, associa ed wi h
he chemical induc o e ec o ion di usion in he o ganic ilm.
Induc i e hys e esis p oduces clockwise loops and capaci i e
hys e esis c ea es coun e clockwise loops in he ans e cu en .
The co esponding impedance spec a p o ide a aluable ool
o he classi ica ion o he dominan elaxa ion phenomena ha
c ea e he dynamical hys e esis e ec s.
■ASSOCIATED CONTENT
*
sı Suppo ing In o ma ion
The Suppo ing In o ma ion is a ailable ee o cha ge a
h ps://pubs.acs.o g/doi/10.1021/acs.jpcle .3c03062.
T anspa en Pee Re iew epo a ailable (PDF)
■AUTHOR INFORMATION
Co esponding Au ho
Juan Bisque −Ins i u e o Ad anced Ma e ials (INAM),
Uni e si a Jaume I, 12006 Cas elló, Spain; o cid.o g/
0000-0003-4987-4887; Email: [email p o ec ed]
Comple e con ac in o ma ion is a ailable a :
h ps://pubs.acs.o g/10.1021/acs.jpcle .3c03062
No es
The au ho decla es no compe ing inancial in e es .
■ACKNOWLEDGMENTS
This wo k is unded by he Eu opean Resea ch Council (ERC)
ia Ad anced G an 101097688 (Pe oSpike ).
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