SAMY, B. M. e al. VOLUME: 22 |NUMBER: 4 |2024 |DECEMBER
Resea ch A icle
INVESTIGATION OF TRANSIENTS IN
GROUNDING GRIDS
Basma M. SAMY1, Ib ahim I. I. MANSY2, Eb ahim A. BADRAN2,3,∗
1Highe Ins i u e o Enginee ing and Technology in El-Mahalla, El-Mahala El-kub a, Egyp
2Elec ical Enginee ing Depa men , Mansou a uni e si y, Mansou a, Egyp
3Mansou a Highe Ins i u e o Enginee ing and Technology (Mansou a Collage), El-Mansou a, Egyp
basbosasam[email p o ec ed], [email p o ec ed], [email p o ec ed]
∗Co esponding au ho : Eb ahim A. Bad an; [email p o ec ed]
DOI: 10.15598/aeee. 22i4.240412
A icle his o y: Recei ed Ap 26, 2024; Re ised Sep 08, 2024; Accep ed Oc 08, 2024; Published Dec 31, 2024.
This is an open access a icle unde he BY-CC license.
Abs ac . The g ounding g id o a powe sys em is
e y impo an o abso bing he ha m ul o e ol ages
and/o o e cu en s du ing ansien s. The ligh ning
su ges equen ly causes o e ol ages and/o o e cu -
en s ia he g ounding g id. This may ha e dange ous
e ec s on pe sons and/o equipmen . The e o e, his
pape e iews in de ail he ansien in g ounding g ids
due o ligh ning su ges. The g ounding g id con igu a-
ions and ma hema ical modeling a e explained. Many
con igu a ions a e used in he analysis such as one,
ou , six een meshes g ounding con igu a ions. Also,
wo injec ion poin s a e analyzed: a he e minal and
he middle o he g id. The analysis is ca ied ou using
ATP/EMTP. Many ansien esponses o ol ages and
cu en s a di e en poin s o he g ounding g id o
di e en con igu a ions a e calcula ed and compa ed.
The peak ol age and cu en alues a e compa ed o
be he basis o sa e y design o he g ounding sys em.
Keywo ds
Ligh ning, O e ol age, O e cu en , Mi iga-
ion, G ounding G ids, ATP/EMTP.
1. In oduc ion
The amewo k o powe sys ems is s uc u ed a ound
speci ic poin s like gene a o and ans o me neu al
poin s [1]. G ounding g ids play a key ole in e-
ducing o e ol age du ing sho -ci cui e en s. These
g ids consis o conduc i e segmen s ac ing as g ound-
ing uni s.
G ounding sys ems in subs a ions a e essen ial o
sa e y and eliabili y, aiming o main ain ouch and
s ep ol ages wi hin es ablished s anda ds [2]. A
g ounding g id includes in e connec ed ho izon al con-
duc o s and ods, wi h he p ima y goal o mee -
ing sa e y le els se by indus y s anda ds [3]. Va i-
ous g ounding me hods a e s udied o enhance human
sa e y a ound g ounding g ids and elec ical equipmen
[4].
Imp o ing g ounding g id pe o mance in ol es ad-
d essing wo key a eas: educing aul cu en and e-
ining g id design [5]. Dec easing aul cu en is chal-
lenging [6] bu can be achie ed by adjus ing he g id’s
mesh and adding e ical g ounding ods [7, 8], enhanc-
ing p o ec ion agains elec ic shocks [9].
G ounding sys ems ha e mul iple unc ions, such as
neu al g ounding o ans o me s, dissipa ing o e -
head g ound o e ol age, balancing cha ge be ween
phases and g ound, and p o iding equipmen g ound-
ing [10]. P ope g ounding is c ucial o de ense agains
ligh ning, ensu ing ope a o and equipmen sa e y [11].
Inadequa e g ounding can lead o damage, da a and
equipmen loss, plan shu downs, and sa e y isks
[12]. Elec ic powe companies a e wo king o imp o e
g ounding sys ems o sa e y and eliabili y [13].
G ounding sys em pe o mance is a ec ed by ac-
o s such as g ounding cu en , so moni o ing and
assessing g ounding condi ions is an ongoing a ea
o esea ch [14]. Due o he di icul y o obse -
©2024 ADVANCES IN ELECTRICAL AND ELECTRONIC ENGINEERING 371
SAMY, B. M. e al. VOLUME: 22 |NUMBER: 4 |2024 |DECEMBER
ing o e ol age di ec ly, nume ical simula ions like
he Al e na i e/Elec oMagne ic T ansien P og am
(ATP/EMTP) a e used o in es iga ion [15].
In his pape , a de ailed o e iew and b ie discus-
sion o g ounding g ids a e in oduced. The g ounding
g id con igu a ions and ma hema ical modeling a e ex-
plained. Many con igu a ions a e used in he analysis
such as one, ou , six een meshes g ounding con igu-
a ions. Also, wo injec ion poin s a e analyzed: a
he e minal and he middle o he g id. The analysis
is ca ied ou using ATPD aw e sion o ATP/EMTP
[16]. Many ansien esponses o ol ages and cu en s
a di e en poin s o he g ounding g id o di e en
con igu a ions a e calcula ed and compa ed. The peak
ol age and cu en alues a e compa ed o be he basis
o sa e y design o he g ounding sys em.
The subsequen sec ions o he pape a e o ganized
as ollows: Sec ion 2. co e s g ounding con igu a ion
and modeling, Sec ion 3. del es in o he ansien
beha io o g ounding g ids, Sec ion 4. p esen s simu-
la ions o se e al illus a i e cases, and inally, Sec ion
5. summa izes he conclusions.
2. G ounding G id
Con igu a ion And
Modeling
Va ious me hods ha e been used o e he yea s o
analyze and op imize g ounding g id design and con-
igu a ion [17]. Une en spacing o g id elemen s has
demons a ed imp o ed pe o mance in some cases,
wi h ac o s like aul cu en , soil esis i i y, and con-
duc o leng h con ibu ing o lowe and mo e e enly
dis ibu ed ouch ol ages [18].
An expe imen al app oach is p esen ed in one s udy
[19], while ano he in oduced he concep o a "Com-
p ession a io" conduc o [20, 21]. O he echniques
based on gene ic algo i hms a e applied in di e en
s udies [22, 23]. An e olu iona y app oach is o en
p e e ed as i op imizes he g ounding g id’s layou
wi hou elying on ixed s uc u es o p e ious expe i-
ence.
The g ounding g id is composed o ba s posi ioned a
a speci ic dep h benea h he subs a ion loo , spanning
he en i e subs a ion a ea. G ounding ods a e s a e-
gically placed wi hin he mesh, ex ending downwa d o
a eas like building and ans o me ounda ions [24].
Fig. 1a p o ides a de ailed iew o he g ounding
g id componen s [25], while Fig. 1b illus a es he
g ounding elec odes, including induc ances and esis-
ances. The esis ance (R) and sel -induc ance (L) a e
(a) The h ee-dimensional iew.
(b) Pa ame e s o he g ounding elec odes model.
(c) The equi alen ci cui o e ical od/spike.
Fig. 1: Equi alen ci cui o he g ound G id.
de e mined using equa ions (1) and (2).
R=ρ
π 2[Ω] (1)
L=µ◦l
2πln 2l
√2 h−1[H] (2)
whe e lis he leng h o each cell, is he elec ode
adius, ρcu is he ma e ial esis i i y, his he dep h
and he pe meabili y is assumed as he acuum pe -
meabili y, µ0= 4π10−7A/m [26]. Also, he g ounding
esis ance, R and he capaci ance o g ound a e de-
e mined by:
R =ρ
πl ln 2l
√2 h−1[Ω] (3)
C=πεl
ln 2l
√2 h −1
[F](4)
In his con ex , he esis i i y o he soil (ρ)is a
key pa ame e , and i ’s impo an o no e ha he
©2024 ADVANCES IN ELECTRICAL AND ELECTRONIC ENGINEERING 372
SAMY, B. M. e al. VOLUME: 22 |NUMBER: 4 |2024 |DECEMBER
pe mi i i y (ε)is de ined as ε=ε0ε , whe e ε0=
8.859 ×10−12 F/m ep esen s he acuum pe mi i -
i y, and ε deno es he ela i e pe mi i i y o he soil
[26].
The equi alen ci cui o he e ical od/spike is
shown in Fig. 1c. The esis ance, induc ance, and ca-
paci ance unde ansien phenomenon a e calcula ed
by:
Ri=ρ
liln 8li
d−1[Ω] (5)
Li= 2liln 4li
d×10−7[H] (6)
C=ε li
18 ln 4li
d×10−9[F](7)
whe e, ρis solid esis i i y (Ωm),liis he o al leng h
o g ound od (m), dis he diame e o he g ound od
(m), and ε is he ela i e pe mi i i y o solid.
3. G ounding G id Beha io
Via T ansien s-Li a u e
Re iew
The indus ial sec o equi es a eliable and cos -
e ec i e way o moni o he sa e y o g ounding g ids
o p o ec people and equipmen . A moni o ing sys-
em o assessing subs a ion sa e y was c ea ed in [27],
inco po a ing elecom and senso echnology as pa o
he sma g id ini ia i e. I uses a se equency o pe-
iodically measu e ouch and s ep ol ages and elies
on a da abase o e icien g ounding g id e alua ion.
Fo be e equipmen p o ec ion, he plan should ex-
pand o include addi ional senso s and indices. The
g ounding design also ocuses on p o ec ing equipmen ,
wi h a hypo hesis sugges ing ha app op ia e ouch
and s ep ol ages in a ious subs a ion loca ions indi-
ca e good g ounding condi ions o equipmen p o ec-
ion. Howe e , u he esea ch is needed o con i m
his hypo hesis. The plan in ol es a senso ne wo k
and da a collec ion, which poses challenges such as
ne wo k c ea ion, main enance, and eliabili y, align-
ing wi h he goals o sma g id esea che s ocused on
in o ma ion and communica ion echnology (ICT).
In e ms o g ounding g id design, he main aim is
o educe g ounding esis ance, mesh ol age, and s ep
ol age o accep able le els du ing a g ound aul . I ’s
also essen ial o e alua e he g id’s pe o mance a -
e a ligh ning s ike, as i beha es di e en ly unde
impulse cu en compa ed o powe - equency ailu es.
The ATP-EMTP so wa e assesses he g ounding g id’s
e ec i eness du ing ligh ning s ikes. Va ious me hods
o dec ease induced and ligh ning o e ol age in ol e
modi ying he g id design by adding conduc o s o ods
o inc ease he g id’s su ace a ea in con ac wi h he
soil.
One app oach, he IEEE me hod, in ol ed placing a
single od o di e en leng hs a he poin o he ligh -
ning wa e’s impac . An op imal od leng h o 3 me-
e s has been ound, as longe leng hs inc ease induced
o e ol age due o equency-dependen induc i e e -
ec s [28].
An ex e nal g ound design in dis ibu ion sys ems
aimed o imp o e ligh ning pe o mance by connec -
ing an ex e nal g ound wi e and g ound od o o e -
head wi es [29]. An ATP-EMTP model simula es ligh -
ning pe o mance, including pole op ol age, c i ical
cu en , and back lasho e a e (BFOR), using di -
e en impulse esis ances and ligh ning cu en wa e-
o ms. Ins alling an ex e nal g ound a ec s pole op
ol age, c i ical cu en , and BFOR, depending on ac-
o s such as ligh ning cu en wa e o m, wa e eloc-
i y, and g ound od impulse esis ance. These indings
guide ansmission line g ounding sys em designs and
g ounding s anda ds e isions.
Ano he s udy in oduced a ansien me hodology
o calcula ing node ol ages and uses a gene ic algo-
i hm o op imize g ounding g id size o s udying he
e ec s o ligh ning s ikes [24]. Simula ion esul s wi h
a ying mesh g id sizes p o ide insigh s in o he be-
ha io and impedance o he g ounding sys em du ing
ligh ning s ikes. The s udy examines g ound po en ial
ise (GPR) and mesh g id size o enhance sa e y, ind-
ing ha i egula g ounding g ids end o be mo e se-
cu e, wi h lowe o al GPR compa ed o egula g ids.
Ano he in es iga ion examined he ansien beha -
io o g ounding sys ems unde ligh ning s ikes us-
ing ci cui models [26]. These models include cu en -
con olled ol age sou ces (CCVS) o ep esen in e -
ac ions among g ounding elec odes and simula e com-
plex g ounding g ids unde su ge condi ions. The
models align wi h EMF heo y models despi e ap-
p oxima ions ela ed o ci cui ep esen a ions du ing
su ge condi ions. Fu he esea ch is sugges ed o im-
p o e pe o mance a lowe equencies and examine
he model’s po en ial o simula ing complex g ound-
ing a angemen s.
While ci cui models a e limi ed by low- equency
quasi-s a ic app oxima ions, EMF heo y models o -
e mo e accu acy bu s uggle wi h complex geome-
ies. Field heo y-based models o en o e look ioniza-
ion e ec s. The ci cui app oach can be ex ended o
highe equencies by di iding he elec ode ep esen a-
ion in o basic cells, bu i may o e es ima e ansien
ol ages due o quasi-s a ic assump ions [30].
©2024 ADVANCES IN ELECTRICAL AND ELECTRONIC ENGINEERING 373
SAMY, B. M. e al. VOLUME: 22 |NUMBER: 4 |2024 |DECEMBER
Las ly, a case s udy a he Al-Mos akbal subs a ion
in Cai o, Egyp , e alua ed g ounding g id design un-
de di e en condi ions, including g ound aul s and
ligh ning s ikes [28]. The s udy highligh s he impo -
ance o assessing g ounding g id pe o mance du ing
ligh ning s ikes, whe e impulse cu en s cause di e -
en beha io han powe - equency ailu es.
Va ious s a egies a e examined o mi iga e induced
o e ol age, ocusing p ima ily on changing g id de-
sign o inc ease con ac su ace wi h he soil. The
IEEE me hod ecommends using a 3-me e od a he
poin o ligh ning impac o educe induced o e ol -
age. ATP-EMTP simula ions assess he e ec i eness
o hese me hods.
Mo eo e , a s udy explo es g ounding sys em mod-
eling o g ound po en ial ise (GPR) compu a ion,
powe sys em simula ions, and insula ion coo dina ion
[31]. I p oposed a me hod o p edic equi alen ci cui
pa ame e s h ough ime-domain impulse esponse op-
imiza ion. Equi alen ci cui s ha accu a ely ep e-
sen g ounding sys ems while accoun ing o equency
e ec s and soil ioniza ion a e de eloped. Nonlinea
ci cui s imp o e esponse accu acy, educing e o s in
GPR es ima ion o less han 4%. These ci cui s apply
o sys emic analyses and GPR calcula ions conside ing
ligh ning s ikes and sho ci cui s.
While many elec omagne ic ansien (EMT) in es-
iga ions ocus on o e ol age beha io ac oss a wide
equency ange, o e cu en o g ounding g id’s e ec s
ecei es less a en ion.
4. G ounding G id Simula ion
and Analysis
4.1. G ounding G id Simula ion
To examine he ansien esponse o g ounding g ids
accu a ely, i is c ucial o conduc simula ions o hese
g ids. In his esea ch, he ansien esponse o ligh -
ning impulses using a ious es ed g ids: CS01, CS04,
and CS16, as depic ed in Fig. 2 a e analyzed o many
cases. The dimensions o hese es cases a e de ailed
in Table 1. The ho izon al g ounding g id conduc o s
ha e a adius o 10 mm and a e bu ied a a dep h o
0.6 m in soil wi h ε= 50 and ρ= 100Ωm [32]. The
cu en impulse injec ed a poin A in each g id ol-
lows he o mula p esen ed in equa ion (8). The peak
alue o his cu en impulse is app oxima ely 12 kA.
The peak cu en and he ime cons an s a e selec ed
as gi en in [32] o compa ison pu pose.
I( ) = 12000 e−27000 −e−5600000 (8)
The i s poin o injec ion is poin A a he e minal
o he g id, whe eas he second poin is poin B a he
middle o he g id, as gi en in Fig. 2 Fig. 3 illus a es
he ATPD aw model employed o hese es cases. Ta-
ble 2 p o ides he RLC pa ame e s o he g ids unde
in es iga ion, whe e R and C ep esen he esis ance
and capaci ance o he g id, while L1 and L2 deno e he
induc ance o he main wi e and he g id conduc o s.
Fig. 4 p esen s he compa ison be ween he pub-
lished in [32] and simula ed ol age wa e o m a he
ou le poin o bo h one and ou meshes g ounding
g id as esponse o he ligh ning impulse a poin A.
I can be seen he closeness be ween he wa e o ms
and hence he a ailabili y o he p oposed model using
ATPD aw.
Tab. 1: RLC o each g id con igu a ion.
R(Ω) L1(H)C(F)L2(H)
CS01 6.499 2.396e-005 6.802e-09 5.529e-006
CS04 5.665 2.396e-005 7.803e-09 5.529e-006
CS16 1.071 1.412e-004 4.125e-08 3.301e-005
4.2. Analysis o G ounding G id’s
Vol ages
The analysis o g ounding g id’s ol age is ca ied ou
ia he in es iga ion o he g id esponse when he in-
jec ion is applied a wo poin s; e minal poin A and
middle poin B.
1) Injec ion a he e minal poin A
The ligh ning impulse is applied in his case a poin A.
The wa e o ms o he ansien ol ages in esponse o
a ligh ning impulse o di e en g ounding g id con igu-
a ions a e illus a ed. In Fig. 5, he ol age wa e o ms
a he ou le poin o one, ou , and six een g ounding
g id meshes a e obse ed.
Also, Fig. 6 shows he ansien ol age wa e o ms
a poin s B2 and B3 a one mesh con igu a ion and he
same poin a a ious g id con igu a ions in esponse o
he ligh ning impulse. Addi ionally, Fig. 7 displays he
ansien ol age wa e o ms a se e al poin s o each
g id con igu a ion in esponse o he same ligh ning
impulse.
The abo e analysis is ca ied ou again when he
h ee e minals o he g ound g id a e ea hed ia he
e ical od. Fig. 8 illus a es he ansien ol age
wa e o ms a he h ee e minals o bo h one and ou
meshes’ g ound g id con igu a ions. Fu he mo e, Fig.
9 shows he compa ison be ween he ol age o he
same e minal poin o he h ee g ound g id con i-
u a ions unde s udy.
©2024 ADVANCES IN ELECTRICAL AND ELECTRONIC ENGINEERING 374
SAMY, B. M. e al. VOLUME: 22 |NUMBER: 4 |2024 |DECEMBER
Fig. 2: Di e en numbe o meshes o squa e g ids.
(a) CS01.
(b) CS04.
(c) CS16.
Fig. 3: ATPD aw simula ion models o di e en cases.
(a) Published.
(a) B2 a one mesh.
(b) B3 a one mesh.
Fig. 6: The ol age wa e o ms a e minal poin s o di e en
g ids as esponse o he ligh ning impulse a poin A
wi hou ea hing he e minals.
(b) Simula ed.
Fig. 4: Compa ison be ween he published and simula ed ol -
age wa e o m a he ou le poin o bo h 1 and 4 meshes
as esponse o he ligh ning impulse.
Fig. 5: The ol age wa e o m a he ou le poin o 1, 4, and
16 meshes as esponse o he ligh ning impulse a poin
A.
(a) 1 mesh.
©2024 ADVANCES IN ELECTRICAL AND ELECTRONIC ENGINEERING 375
SAMY, B. M. e al. VOLUME: 22 |NUMBER: 4 |2024 |DECEMBER
(b) 4 meshes.
(c1) 16 meshes.
(c2) 16 meshes.
(c3) 16 meshes.
Fig. 7: The ol age wa e o ms a se e al poin s o di e en
g id con igu a ions as esponse o he ligh ning impulse
a poin A wi hou ea hing he e minals.
Fig. 10 shows he compa ison be ween he ansien
ol age wa e o ms a many poin s o he ou meshes
con igu a ions when he h ee e minals a e ea hed.
Also, Fig. 11 shows he compa ison be ween he an-
sien ol age wa e o ms a many poin s o he sex-
een meshes con igu a ions when he h ee e minals
a e ea hed.
I can be seen ha nonlinea i y o ol ages wa e o m
and he peaks. Also, he ea hing o he main e minals
educes he peak alues.
2) Injec ion a he e minal poin B
Again o mo e in es iga ion o he esponse o he
g ounding g id o he ligh ning impulse, he injec ion
o he ligh ning is applied in his case a poin B. The
wa e o ms o he ansien ol ages in esponse o a
ligh ning impulse o di e en g ounding g id con igu-
a ions a e illus a ed.
(a) 1 mesh.
(b) 4 meshes.
Fig. 8: The ol age wa e o m a he h ee e minal poin s o
1 and 4 meshes as esponse o he ligh ning impulse a
poin A wi h ea hing o he h ee e minals.
(a) B2.
(b) B4.
(c) B3.
Fig. 9: The ol age wa e o ms a e minal poin s o he one
mesh and hei equi alen s o di e en g ids as esponse
o he ligh ning impulse a poin A wi h ea hing o he
h ee e minals.
©2024 ADVANCES IN ELECTRICAL AND ELECTRONIC ENGINEERING 376
SAMY, B. M. e al. VOLUME: 22 |NUMBER: 4 |2024 |DECEMBER
Fig. 10: The ol age wa e o ms a se e al poin s o he ou
g id con igu a ion as esponse o he ligh ning impulse
a poin A wi h ea hing o he h ee e minals.
Fig. 11: The ol age wa e o ms a se e al poin s o he sex een
g id con igu a ion as esponse o he ligh ning impulse
a poin A wi h ea hing o he h ee e minals.
Fig. 12: The ol age wa e o ms a he e minal poin s o di e -
en g ids as esponse o he ligh ning impulse a poin
B wi hou ea hing o he e minals.
Fig. 13: The ol age wa e o ms a se e al poin s o he ou
meshes’ g id as esponse o he ligh ning impulse a
poin B wi hou ea hing o he e minals.
Fig. 14: The ol age wa e o ms a se e al poin s o he sexi-
een meshes’ g id as esponse o he ligh ning impulse
a poin B wi hou ea hing o he e minals.
Fig. 15: The ol age wa e o ms a he e minal poin s o di e -
en g ids as esponse o he ligh ning impulse a poin
B wi h ea hing o he e minals.
©2024 ADVANCES IN ELECTRICAL AND ELECTRONIC ENGINEERING 377
SAMY, B. M. e al. VOLUME: 22 |NUMBER: 4 |2024 |DECEMBER
Fig. 12 shows he ansien ol age wa e o ms a
he eminal poin s o a ious g id con igu a ions in
esponse o he ligh ning impulse a poin B. Addi-
ionally, Figs. 13 and 14 display he ansien ol age
wa e o ms a se e al poin s o each o ou and sexi-
een g id con igu a ion in esponse o he same ligh -
ning impulse.
The abo e analysis is ca ied ou again when he
h ee e minals o he ound g id a e ea hed ia he
e ical od. Fig. 15 illus a es he ansien ol age
wa e o ms a he h ee e minals o bo h one and ou
meshes’ g ound g id con igu a ions. Fu he mo e, Fig.
16 shows he compa ison be ween he ol age o he
same e minal poin o he h ee g ound g id con iu-
a ions unde s udy.
4.3. Analysis o G ounding G id’s
Cu en s
The analysis o g ounding g id’s cu en s is ca ied ou
ia he in es iga ion o he g id esponse when he in-
jec ion is applied a wo poin s; e minal poin A and
he middle poin B. Also, he e minals o he main
sides a e no g ounded and hen g ounded as wo case
s udies as gi en be o e.
1) Injec ion a he e minal poin A
The injec ion o he ligh ning impulse is applied in his
case a poin A. The wa e o ms o he ansien cu -
en s in esponse o a ligh ning impulse o di e en
g ounding g id con igu a ions a e illus a ed.
The e minals o he main sides a e no
g ounded
Fig. 17a shows he cu en s o he ou b anches o
he one mesh g ounding g id con igu a ion (CS01).
Fig. 17b shows he cu en s o he b anches o he
i s mesh o ou meshs g ounding g id con igu a ion
(CS04). Also, Fig. 17c shows he cu en s o he
b anches o he i s mesh o sexi een meshs g ound-
ing g id con igu a ion (CS16).
The cu en s o he wo b anches connec ed o he
injec ion poin a e inc eased wi h he inc easing o he
g ounding g id meshes. I is inc eased o he one,
ou , six een meshes as 1598 A, 3954 A, and 6766A,
espec i ely. The e o e, i can be concluded ha he
g ound g id cu en s a he i s mesh a e inc eased as
he numbe o meshes inc eased.
Fig. 18 illus a es he dis ibu ion o cu en s in se -
e al pa hes o he ou meshes con igu a ion o he
igh pa h (I1, I7, I21, and I17), he le pa h (I3, I9,
I11, and I15), and he wo middle pa hes; middle pa h1
(I1, I23, I13, and I15) and middle pa h 2 (I3, I5, I19,
and I17).
I can be no ice ha he oscilla o y beha iou o he
cu en inc eases a he end o each pa h whe e he
cu en go o he ea h.
Fig. 19 illus a es he dis ibu ion o cu en s in
se e al pa hes o he six een meshes con igu a ion il-
lus a es he igh pa h (I1, I2, I4, I6, I23, I24, I59,
I77), he middle igh pa h (I1, I2, I4, I19, I27, I55,
I73, I74), he middle pa h (I1, I2, I15, I29, I51, I67,
I70, I74), he middle le pa h (I1, I11, I31, I37, I38,
I55, I73, and I74), he le pa h (I9, I32, I43, I61, I62,
I68, I70, and I74), he le -middle pa h (I9, I32, I43,
I48, I52, I56, I77).
I can be no iced ha he oscilla o y beha iou o
he cu en inc eases a he end o each pa h whe e he
cu en goes o he ea h.
The e minals o he main sides a e g ounded
Fig. 20a shows he cu en s o he ou b anches
o he one mesh g ounding g id con igu a ion (CS01).
Fig. 20b shows he cu en s o he b anches o he
i s mesh o ou meshes g ounding g id con igu a-
ion (CS04). Also, Fig. 20c shows he cu en s o he
b anches o he i s mesh o six een meshes g ounding
g id con igu a ion (CS16).
The cu en s o he wo b anches connec ed o he
injec ion poin a e inc eased wi h he inc easing o he
g ounding g id meshes. I is inc eased o he one,
ou , six een meshes as 9059 A, 13857 A, and 24448 A,
espec i ely. The e o e, i can be concluded ha he
g ound g id cu en s a he i s mesh a e inc eased as
he numbe o meshes inc eased.
Fig. 21 illus a es he dis ibu ion o cu en s in se -
e al pa hes o he ou meshes con igu a ion o he
igh pa h (I1, I7, I21, and I17), he le pa h (I3, I9,
I11, and I15), and he wo middle pa hes; middle pa h1
(I1, I23, I13, and I15) and middle pa h 2 (I3, I5, I19,
and I17).
I can be no ice ha he oscilla o y beha iou o he
cu en inc eases a he end o each pa h whe e he
cu en go o he ea h.
Fig. 22 illus a es he dis ibu ion o cu en s in
se e al pa hes o he six een meshes con igu a ion il-
lus a es he igh pa h (I1, I2, I4, I6, I23, I24, I59,
I77), he middle igh pa h (I1, I2, I4, I19, I27, I55,
I73, I74), he middle pa h (I1, I2, I15, I29, I51, I67,
I70, I74), he middle le pa h (I1, I11, I31, I37, I38,
I55, I73, and I74), he le pa h (I9, I32, I43, I61, I62,
I68, I70, and I74), he le -middle pa h (I9, I32, I43,
I48, I52, I56, I77).
©2024 ADVANCES IN ELECTRICAL AND ELECTRONIC ENGINEERING 378
SAMY, B. M. e al. VOLUME: 22 |NUMBER: 4 |2024 |DECEMBER
I can be no iced ha he oscilla o y beha iou o
he cu en inc eases a he end o each pa h whe e he
cu en goes o he ea h.
(a) Fou meshes’ g id.
(b) Sex een meshes’ g id.
Fig. 16: The ol age wa e o ms a se e al poin s o he
meshes’ g id as esponse o he ligh ning impulse a
poin B wi h ea hing o he e minals.
(a) 1 mesh.
(b) 4 meshes.
(c) 16 meshes.
Fig. 17: Cu en s o all b anches o he i s mesh o di e en
g id con igu a ions as esponse o he ligh ning impulse
a poin A.
(a) The igh pa h.
(b) The le pa h.
(c) The middle pa h 1.
(d) The middle pa h 2.
Fig. 18: Cu en s o all b anches o ou meshes g id as esponse
o he ligh ning impulse a poin A.
A. Injec ion a he e minal poin B
Again o mo e in es iga ion o he esponse o he
g ounding g id o he ligh ning impulse, he injec ion
o he ligh ning is applied in his case a poin B. The
wa e o ms o he ansien cu en s in esponse o a
ligh ning impulse o di e en g ounding g id con igu-
©2024 ADVANCES IN ELECTRICAL AND ELECTRONIC ENGINEERING 379
SAMY, B. M. e al. VOLUME: 22 |NUMBER: 4 |2024 |DECEMBER
[31] ANDRADE, A. F., e al. Modeling G ounding
Sys ems Response o Cu en Impulses Consid-
e ing Nonlinea E ec s. IEEE T ansac ions on
Powe Deli e y. 2021, ol. 36, no. 6, pp. 3858-
3866. DOI: 10.1109/TPWRD.2021.3049908.
[32] GOUDA, O. E., G. M. AMER, T. M. EL-SAIED.
Fac o s A ec ing T ansien Response o G ound
G id Sys ems. MEPCON Con e ence. 1998.
©2024 ADVANCES IN ELECTRICAL AND ELECTRONIC ENGINEERING 386