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Efficient Spectral Domain MoM for the Design of Circularly Polarized Reflectarray Antennas Made of Split Rings

Abstract

The method of moments (MoM) in the spectral domain is used for the analysis of the scattering of a plane wave by a multilayered periodic structure containing conducting concentric split rings in the unit cell. Basis functions accounting for edge singularities are used in the approximation of the current density on the split rings, which makes it possible a fast convergence of MoM with respect to the number of basis functions. Since the 2-D Fourier transforms of the basis functions cannot be obtained in closed-form, judicious tricks (controlled truncation of infinite summations, interpolations, etc.) are used for the efficient numerical determination of these Fourier transforms. The implemented spectral domain MoM software has been used in the design of a circularly polarized reflectarray antenna based on split rings under the local periodicity condition. The antenna has been analyzed with our spectral domain MoM software, with CST and with HFSS, and good agreement has been found among all sets of results. Our software has proven to be around 27 times faster than CST and HFSS.

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Efficient Spectral Domain MoM for the Design of Circularly Polarized Reflectarray Antennas Made of Split Rings

Author: Florencio Lora, Rafael; Rodríguez Boix, Rafael; Encinar, José A.
Publisher: IEEE
Year: 2019
DOI: 10.1109/TAP.2018.2888956
Source: https://idus.us.es/bitstreams/48ee6df8-5a6d-49c8-96b6-4310a2c65064/download
1
E icien spec al domain MoM o he design
o ci cula ly pola ized e lec a ay an ennas
made o spli ings
Ra ael Flo encio, Ra ael R. Boix, and José Encina ,
Abs ac —The Me hod o Momen s (MoM) in he spec al
domain is used o he analysis o he sca e ing o a plane
wa e by a mul ilaye ed pe iodic s uc u e con aining conduc ing
concen ic spli ings in he uni cell. Basis unc ions accoun ing
o edge singula i ies a e used in he app oxima ion o he
cu en densi y on he spli ings, which makes i possible
a as con e gence o MoM wi h espec o he numbe o
basis unc ions. Since he 2-D Fou ie ans o ms o he basis
unc ions canno be ob ained in closed- o m, judicious icks
(con olled unca ion o in ini e summa ions, in e pola ions, e c.)
a e used o he e icien nume ical de e mina ion o hese Fou ie
ans o ms. The implemen ed spec al domain MoM so wa e
has been used in he design o a ci cula ly pola ized e lec a ay
an enna based on spli ings unde he local pe iodici y condi ion.
The an enna has been analyzed wi h ou spec al domain MoM
so wa e, wi h CST and wi h HFSS, and good ag eemen has
been ound among all se s o esul s. Ou so wa e has p o en
o be a ound 27 imes as e han CST and HFSS.
Index Te ms—Mul ilaye ed media, momen me hods, pe iodic
s uc u es, e lec a ays, ci cula pola iza ion.
I. In oduc ion
REFLECTARRAY an ennas a e an in e es ing al e na i e
o e lec o an ennas and mic os ip a ays owing o
hei e sa ile adia ion pe o mance, low p o ile, ligh weigh ,
ease o ab ica ion, simpli ied eeding sys em, e c. [1]. In he
pa icula case o ci cula pola iza ion (CP) e lec a ays, he
a iable o a ion echnique (VRT) in oduced by Huang and
Pogo zelski is a design app oach ha has p o en o be e y
success ul [2]. In he ame o his echnique, each elemen
o he e lec a ay is o a ed a di e en angle o achie e he
adequa e phase shi in he impinging ci cula ly pola ized wa e
ha makes i possible o gene a e he p esc ibed adia ion
pa e n a e e lec ion. The VRT equi es ha he e lec ion
coe icien s o he wo o hogonal linea componen s o he
impiging wa e elec ic ield a e o equal magni ude and 180◦
ou o phase in o de o keep he sense o ci cula pola iza ion
(LHCP o LHCP o RHCP o RHCP) a e e lec ion [2], [3].
One e lec a ay elemen ha has u ned ou o be especially
sui able o CP applica ions is ha based on spli ings. Han
e al. used he VRT and single spli ings o design a Ka-
band RHCP e lec a ay a 31.75 GHz wi h measu ed c oss-
pola iza ion le el below 40 dB a b oadside [4]. S acked spli
ings o di e en size we e used in [5] o design a dual
equency RHCP e lec a ay ope a ing in he C and Ka bands.
Smi h e al. [6] designed a single laye dual equency CP
e lec a ay by using an elemen wi h wo concen ic spli
ings. The inne ings and he VRT we e used o adjus he
elemen s phase a 29.75 GHz o RHCP adia ion, while he
ou e ings and he VRT we e used a 19.95 GHz o LHCP
adia ion. An ex ension o his wo k was p esen ed in [7]
whe e he dual equency CP e lec a ay was combined wi h
an FSS made o non-spli ings o combine he ope a ion o
he e lec a ay wi h ha o a second CP mic os ip a ay
an enna wo king a L band. Zhao e al. used he single laye
elemen based on wo concen ic ings and he VRT o design
a b oadband CP e lec a ay a a cen e equency o 10 GHz
wi h a bandwid h la ge han 30% o 1-dB gain a ia ion, and
a bandwid h la ge han 40% o an axial a io smalle han
3-dB [8]. In all p e ious pape s dealing wi h CP applica ions,
he elemen s o he e lec a ays consis o symme ic spli
ings wi h wo gaps and one axis o mi o symme y. Zhang
e al. p oposed in [9] he use o non-symme ic single gap spli
ings which can be used as phasing elemen s o bo h linea
pola iza ion (LP) and CP e lec a ay ope a ion. By using his
elemen , a LP e lec a ay was designed a 20 GHz wi h a
bandwid h o 23% o a 1-dB gain a ia ion and an ape u e
e iciency o 60%.
In he design o a CP e lec a ay an enna made o spli
ings, he use o he VRT equi es o adjus he size o he
gaps and hei o ien a ion o e e y single elemen in o de o
achie e he equi ed phase shi in he impinging ci cula ly
pola ized wa e, and in o de o ensu e a phase di e ence
o 180◦in he e lec ion coe icien s o i s wo o hogonal
linea componen s. When es ima ing he gap size and hei
o ien a ion in each elemen , i is cus oma y o assume ha he
elemen s a e loca ed in a pe iodic en i onmen , which is called
he local pe iodici y assump ion [10], [11]. The alidi y o his
assump ion is jus i ied by he ac ha leads o e lec a ay
designs in which he simula ed pe o mance ag ees e y well
wi h he measu ed pe o mance [5], [7], [8]. The design o a
midsize CP e lec a ay an enna made o spli ings unde he
local pe iodici y assump ion equi es he analysis o a la ge
numbe o di e en mul ilaye ed pe iodic s uc u es owing o
he wide a ie y o gap sizes and o ien a ions ha ha e o be
adjus ed in he spli ings o he di e en e lec a ay elemen s
o phase adjus men [7]. Owing o his, a powe ul nume ical
ool is needed o he analysis o hese mul ilaye ed pe iodic
s uc u es.
In his pape we apply he Me hod o Momen s (MoM) in
2
he spec al domain o he analysis o he sca e ing o a plane
wa e by a mul ilaye ed pe iodic s uc u e including concen ic
spli ings in he uni cell. The implemen ed MoM so wa e
is subsequen ly used in he design o a ci cula ly pola ized
e lec a ay an enna made o spli ings. When applying he
spec al domain MoM, he 2-D Fou ie ans o ms o he
basis unc ions a e exp essed as in ini e summa ions o Hankel
ans o ms. This Hankel ans o m app oach was used in he
pas in conjunc ion wi h he spec al domain MoM o he
de e mina ion o he esonan equencies o mic os ip ing
esona o s [12], he inpu impedance and adia ion pa e ns
o single and s acked annula - ing mic os ip an ennas [13],
[14], he esonan equencies o shielded single and coupled
mic os ip ing esona o s [15], [16], and he ada c oss-
sec ion o concen ic annula mic os ip ings [17]. Howe e ,
o he au ho s’ knowledge, i has ne e been used o mi-
c os ip spli ings and o mul ilaye ed s uc u es in pe iodic
en i onmen s. We ha e only ound one pape dealing wi h
he analysis o mic os ip spli ing esona o s in which a
magne ic wall app oxima e model is used o he de e mina ion
o he esonan equencies, and whe e e ec i e dimensions
a e in oduced o accoun o edge e ec s [18]. Whe eas
mos pape s dealing wi h he analysis o mic os ip ing
s uc u es use ei he magne ic wall ca i y mode unc ions
[13], [19] o subsec ional piecewise unc ions [15], [17] as
basis unc ions o he elec ic cu en densi y on he ings,
in his pape we ha e used basis unc ions ha accoun o
edge singula i ies [16], [19] since hese basis unc ions p o ide
a as con e gence o MoM wi h espec o he numbe o
basis unc ions, which implies ha only small MoM ma ices
ha e o be in e ed. Since he Hankel ans o ms o he edge
singula i y basis unc ions canno be ob ained in closed o m,
we ha e used especially ailo ed quad a u e ules o hei
nume ical compu a ion, which p o ide e y accu a e esul s
wi h a small numbe o quad a u e poin s. Also, we ha e
in oduced judicious s op c i e ia o he summa ion o he
in ini e se ies leading o he 2-D Fou ie ans o ms o he
basis unc ions, and we ha e inally ca ied ou Chebyshe
in e pola ions o hese Fou ie ans o ms as a unc ion o he
spec al adial a iable. As a esul o all hese s a egies,
we ha e de eloped a e y e icien spec al domain MoM
app oach o he analysis o mul ilaye ed pe iodic s uc u es
con aining spli ings. The spec al domain MoM so wa e has
been used in he design o a ci cula ly pola ized e lec a ay
an enna and he esul s ob ained ha e been compa ed wi h
esul s p o ided by comme cial so wa es CST and HFSS .
Good ag eemen has been ound be ween he h ee se s o
esul s, ou so wa e being be ween one and wo o de s o
magni ude as e han CST and HFSS .
II. Nume ical p ocedu e
Figs. 1(a) and (b) show a mul ilaye ed pe iodic s uc u e
backed by a g ound plane. Concen ic conduc ing spli ings
a e loca ed in each uni cell, and a e p in ed on he uppe laye .
The cen e o he ings has been chosen o be coinciden wi h
he geome ical cen e o he uni cell in he z=0 plane.
The conduc ing ings and he g ound plane will be assumed
o be pe ec elec ic conduc o s (PEC). In a gene ic case,
he e would be Rconcen ic ings in he uni cell (R=2 in
Fig.1(b)). Also, each ing would be spli in o Sa cs (S=2 in
Fig.1(b)) so ha he o al numbe o a cs in he uni cell would
be L=RS (L=4 in Fig. 1(b)). Le ρ1land ρ2lbe he inne
and ou e adius o he l- h a c espec i ely (l=1,...,L), and
le wl=ρ2l−ρ1lbe he wid h o he l- h a c. The wo ends o
he l- h a c a e cha ac e ized by he angles ϕ1land ϕ2l, such
ha ϕ1l<ϕ2l. The angle ϕkl (k=1,2; l=1,...,L) is he angle
sub ended be ween he k− h end o he l- h a c and he semi-
in ini e line di ec ed along he posi i e xaxis wi h o igin a
he cen e o he ing. The angle ϕkl is aken as posi i e i ,
s a ing om he x-di ec ed semi-in ini e line, i is d awn in
he coun e clockwise sense, and is aken as nega i e i i is
d awn in he clockwise sense (e.g., in Fig. 1(b), ϕ21,ϕ12,ϕ22,
ϕ13 and ϕ23 a e posi i e, bu ϕ11,ϕ14 and ϕ24 a e nega i e).
z
xy
qinc
em
10
em
20
,
,h2
h1
b
bbbbb
(a)
b
a
y
zx
a
j
22
2
23
2
j
13
j
23
j
12
a2
a1
21
j
21
j
11 j
24
j
14
(b)
Fig. 1. Two-laye ed pe iodic s uc u e. The uni cell con ains wo concen ic
spli ings wi h di e en axes o mi o symme y. A plane wa e impinges on
he mul ilaye ed pe iodic s uc u e. (a) Side iew. (b) Top iew.
In he pa icula cases ea ed in his pape , we will assume
ha each indi idual spli ing o he pe iodic s uc u e has an
axis o mi o symme y going h ough he cen e o he ing
(in he case o Fig. 1(b), his means ha ϕ21 −ϕ11=ϕ22 −ϕ12
and ϕ12 −ϕ21=360◦+ϕ11 −ϕ22, and ha ϕ23 −ϕ13=ϕ24
−ϕ14 and 360◦+ϕ14 −ϕ23=ϕ13 −ϕ24). Fo he - h ing
( =1,...,R), his mi o symme y axis makes an angle
α (−180◦≤α <180◦) wi h he semi-in ini e line di ec ed
along he posi i e yaxis wi h o igin a he cen e o he
ing (see Fig. 1(b)). The angle α is aken as posi i e i ,
s a ing om he y-di ec ed semi-in ini e line, i is d awn in he
coun e clockwise sense, and is aken as nega i e i i is d awn
in he clockwise sense (e.g., in Fig. 1(b), α1and α2a e bo h
posi i e). Please no e ha he es ic ion in oduced by hese
mi o symme y axes is no necessa y in he ma hema ical
de i a ions p esen ed in he es o his sec ion.
The concen ic spli ings o he pe iodic s uc u e a e
p in ed on a mul ilaye ed subs a e con aining Nllaye s (Nl=
3
2 in Fig.1(a)). The i- h laye has a hickness hiand a complex
pe mi i i y εi=ε0ε ,i(1 −j an δi) (i=1,...,Nl). In he
ollowing, a ime dependence o he ype ejω will be assumed
and supp essed h oughou .
As commen ed in he in oduc ion, he uni cell o he
mul ilaye ed pe iodic s uc u e o Figs. 1(a) and (b) has been
used as cons i uen elemen o se e al CP e lec a ay an ennas
[6]–[8]. In he design o a CP e lec a ay an enna unde he
local pe iodici y assump ion, each cell is cha ac e ized by
means o a CP 2 ×2 complex e lec ion ma ix, RCP, which
ela es he RHCP and LHCP componen s o he e lec ed and
inciden elec ic ields when a plane wa e impinges on he
cell su ounded by a pe iodic en i onmen . In his pape , his
impinging plane wa e is assumed o p opaga e in an a bi a y
incidence di ec ion gi en by he angula sphe ical coo dina es
θinc and ϕinc (see Fig.1(a)). I E e
RHCP and E e
LHCP a e he RHCP
and LHCP complex componen s o he e lec ed elec ic ield,
and Einc
RHCP and Einc
LHCP a e he RHCP and LHCP complex
componen s o he inciden elec ic ield, hen
E e
RHCP
E e
LHCP !=RCP · Einc
RHCP
Einc
LHCP !(1)
whe e
RCP = RRHCP,RHCP RRHCP,LHCP
RLHCP,RHCP RLHCP,LHCP !.(2)
When w i ing (1), we assume ha he plane wa e impinging
on he pe iodic s uc u e does no gene a e g a ing lobes
a e e lec ion, which equi es ha he condi ion max(a,b)<
λ0/(1 +sin θinc) (λ0=2π/ω √µ0ε0) is ul illed, aand bbeing
he pe iods o he uni cell in he xand ydi ec ions espec i ely
(see Fig. 1(b)).
A. Spec al domain MoM o mula ion
In o de o ob ain he ma ix RCP o (2) o he mul ilaye ed
pe iodic s uc u e o Figs. 1(a) and (b), we need o ob ain he
sca e ed elec ic ield o impinging plane wa es wi h bo h
RHCP and LHCP pola iza ions. These sca e ed elec ic ields
can be ob ained in e ms o cu en densi y exci ed a he
me allized in e ace z=0, J(x,y), by he impinging wa es.
Le Ems(x,y,z) be he elec ic ield gene a ed in all space
by a plane wa e impinging on he mul ilaye ed subs a e o
Figs. 1(a) and (b) in he absence o he conduc ing spli ings.
The cu en densi y J(x,y) induced on he spli ings will be
he solu ion o he ollowing elec ic ield in eg al equa ion
(EFIE) [20]
ˆ
z×"Ems(x,y,z=0) +
+∞
X
m=−∞
+∞
X
n=−∞ZSmn
GE(x−x0,y−y0,z=0,z0=0) ·J(x0,y0)dx0dy0#=0(3)
(x,y)∈S00
whe e Smn (m,n=. . . , −1,0,1, . . .) is he me allized po ion o
he z=0 plane wi hin he mn- h pe iodic uni cell, and GEis
he non–pe iodic dyadic G een’s unc ion o he mul ilaye ed
subs a e [21]. Since J(x,y) is a Floque -pe iodic unc ion o
xand y, in o de o sol e he EFIE o (3), we only need
o de e mine J(x,y) wi hin one uni cell, e. g., he cell C00
co e ing he ec angula domain {0≤x≤a; 0 ≤y≤b}. Fo
ha pu pose, we expand J(x,y) in C00 in e ms o known
basis unc ions Jlq(x,y) (l=1,...,L;q=1,...,Nb) as shown
below
J(x,y)=
L
X
l=1
Nb
X
q=1
clqJlq(x,y) (4)
whe e Jlq(x,y) (q=1,...,Nb) is he se o Nbbasis unc ions
used o app oxima e he cu en densi y on he l- h a c o he
C00 uni cell. When (4) is in oduced in (3) and Gale kin’s
e sion o MoM is applied, he ollowing sys em o linea
equa ions is ob ained o he unknown coe icien s clq [20]
L
X
l=1
Nb
X
q=1
Γkl,pqclq =ekp (k=1,...,L;p=1,...,Nb).(5)
I we in oke Pa se al’s iden i y o 2-D Fou ie ans o ms,
he MoM ma ix en ies Γkl,pq o (5) can be exp essed in he
spec al domain as double in ini e summa ions gi en by [22]
Γkl,pq =ab
+∞
X
m=−∞
+∞
X
n=−∞he
Jd
kp(kxm,kyn)∗i
·e
G
E,c
(kx=kxm,ky=kyn,z=0,z0=0)
·e
Jd
lq(kxm,kyn) (6)
whe e e
G
E,c
(kx,ky,z=0,z0=0) is he con inuous 2-D
Fou ie ans o m o GE(x,y,z=0,z0=0) [21], kxm =
k0sin θinc cos ϕinc +2πm/a,kyn =k0sin θinc sin ϕinc +2πn/b,
k0=2π/λ0and e
Jd
lq(kxm,kyn) is he disc e e 2-D Fou ie
ans o m o Jlq(x,y), which is gi en by
e
Jd
lq(kxm,kyn)=1
ab ZS00
Jlq(x,y) e−j(kxm x+kyny)dxdy (7)
Finally, he coe icien s ekp o he sys em o equa ions (5)
can be ob ained in he spec al domain as
ekp =−ab he
Jd
kp(kx0,ky0)∗i ·Ems(x,y,z=0)
×e−jk0(sin θinc cosϕinc x+sin θinc sinϕincy)(8)
whe e he ac o e−jk0(sin θinc cosϕinc x+sin θinc sinϕincy)has been explic-
i ly included in (8) o abso b he dependence o Ems(x,y,z=0)
on xand y.
Equa ions (5) o (8) p o ide he spec al domain MoM
o mula ion o he de e mina ion o he ec o unc ion J(x,y)
o (3) and (4). The p oblem wi h his o mula ion is ha he
disc e e 2-D Fou ie ans o ms e
Jd
lq(kxm,kyn) o (6) (de ined in
(7)) canno be ob ained in closed o m, e en o he simples
choice o basis unc ions in (4) (i.e., a cons an alue o he
wo componen s o Jlq(x,y) on he su ace o he spli ings
o Figs. 1(a) and (b)). In he ollowing subsec ion, we will see
how o ackle his p oblem.
B. Basis unc ions and 2-D Fou ie ans o ms
Fig. 2 shows he l- h a c (l=1,...,L=4) o he uni cell
C00 o Fig. 1(b). In Fig. 2 we ha e de ined a shi ed sys em
o coo dina es {x0,y0,z0}wi h o igin a he cen e o he uni
4
b
a
y
z
x
1
l
z’
y’
x’
2l
a/2
b/2
j
1l
j
2l
Fig. 2. Top iew o he l- h a c in he le uni cell o Fig. 1(b). Radial and
angula dimensions o he l- h a c a e shown.
cell in he plane z=0. We a e going o in oduce shi ed
pola coo dina es ρ0and ϕ0, which a e ela ed wi h he o iginal
coo dina es xand yas
x=a
2+ρ0cos ϕ0(9)
y=b
2+ρ0sin ϕ0(10)
The uni ec o s linked o he shi ed pola coo dina es a e
gi en by
ˆρ0=cos ϕ0ˆ
x+sin ϕ0ˆ
y(11)
ˆϕ0=−sin ϕ0ˆ
x+cos ϕ0ˆ
y(12)
In he spli ings used in CP e lec a ay an ennas, he
condi ion wl=ρ2l−ρ1l(ρ1l+ρ2l)/2 (see Fig. 2) is usually
ul illed (i.e., he wid h o he ings is usually much smalle
han hei mean adius) [6]–[8]. Assuming his condi ion holds,
we a e going o neglec he adial componen o he basis
unc ions Jlq(x,y) o (4), Jlq(x,y)·ˆρ0, by compa ison wi h hei
azimu hal componen , Jlq(x,y)·ˆϕ0. Also, we will assume ha
he azimu hal componen o Jlq(x,y) can be ac o ed in e ms
o independen unc ions o ρ0and ϕ0, i.e., we will assume
ha he unc ions Jlq(x,y) can all be ma hema ically w i en
as
Jlq(x,y)= l(ρ0)glq(ϕ0)ˆϕ0(13)
(ρ1l<ρ0<ρ2l;ϕ1l<ϕ0<ϕ2l)
As we will see in Sec ion III, he assump ion shown in (13)
is jus i ied by he ac ha leads o alues o he ma ix RCP in
(2) ha ma ch he alues p o ided by he comme cial so wa e
CST . Al hough he adial componen , Jlq(x,y)·ˆρ0, o Jlq(x,y)
has been neglec ed in (13), we would like o poin ou ha his
componen can be easily accommoda ed in he ma hema ical
o mula ion p esen ed in he es o his subsec ion.
Since he unc ions glq(ϕ0)ˆϕ0o (13) a e pe iodic unc ions
o ϕ0wi h pe iod 2π, hese unc ions can be expanded as
Fou ie se ies o ϕ0as shown below
glq(ϕ0)ˆϕ0=
+∞
X
i=−∞e
gi
lq ejiϕ0(ϕ1l<ϕ0<ϕ2l) (14)
whe e
e
gi
lq =1
2πZϕ2l
ϕ1l
glq(ϕ0)ˆϕ0e−jiϕ0dϕ0(15)
Now, le us in oduce he pola disc e e spec al coo dina es
kρ,mn and kϕ,mn gi en by
kρ,mn =q(kxm)2+(kyn)2(16)
kϕ,mn =a c an kyn
kxm !(17)
I (9) o (14), (16) and (17) a e in oduced in (7), a e some
manipula ions, i is possible o exp ess e
Jd
lq(kxm,kyn) as
e
Jd
lq(kxm,kyn)=2πe−jkxma+kynb
2
ab
×(e
g0
lq ˜
0
l(kρ=kρ,mn)+
+∞
X
i=1
e−jiπ/2˜
i
l(kρ=kρ,mn)
ejikϕ,mne
gi
lq +e−jikϕ,mn e
gi
lq∗)(18)
whe e ˜
i
l(kρ) (i=0,1, . . .) a e Hankel ans o ms o o de io
he unc ions l(ρ0) o (13), which can be exp essed as
˜
i
l(kρ)=Zρ2l
ρ1l
Ji(kρρ0)ρ0 l(ρ0)dρ0,(19)
and whe e he unc ion Ji(·) o (19) is a Bessel unc ions o
i s kind and o de i.
Al hough he exp ession (18) o he compu a ion o
e
Jd
lq(kxm,kyn) looks simple han (7), i p esen s wo d awbacks.
Fi s , he unc ions ˜
i
l(kρ) canno be ob ained in closed o m,
e en o he simples choice o l(ρ0) (e.g., a cons an alue
in he in e al ρ1l<ρ0<ρ2l). Second, (18) in ol es he de e mi-
na ion o an in ini e se ies, which has a dele e ious impac on
he compu a ion o e
Jd
lq(kxm,kyn) by means o (18).
In his pape , he unc ions chosen o Jlq(x,y) a e en i e
domain basis unc ions which accoun o he singula i ies o
J(x,y) a he edges o he a cs o Fig. 1(b). I is well known
ha hese unc ions ensu e a as con e gence o he spec al
domain MoM wi h espec o he numbe o basis unc ions
(LNbin (4)) [16], [19], [20], as will be demons a ed in Sec ion
III. The pa icula unc ions chosen o l(ρ0) and glq(ϕ0) can
be w i en as
l(ρ0)=1
1−2
ρ2l−ρ1lhρ0−ρ2l+ρ1l
2i2
(20)
(l=1,...,L)
glq(ϕ0)=s1− 2
ϕ2l−ϕ1lϕ0−ϕ2l+ϕ1l
2!2
×Uq−1 2
ϕ2l−ϕ1lϕ0−ϕ2l+ϕ1l
2!(21)
(l=1,...,L;q=1,...,Nb)
whe e Uq−1(·) is a Chebyshe polynomial o second kind and
deg ee q−1.
The in eg als o (15) can be ob ained in closed o m o
he unc ions glq(ϕ0) o (21), and hei exp ession is gi en
5
in he Appendix A. Howe e , he in eg als o (19) canno
be ob ained in closed o m o he unc ions l(ρ0) o (20).
Fo una ely, we ha e checked hese la e in eg als can be
nume ically ob ained wi hin e y easonable CPU imes by
means o Gauss-Chebyshe quad a u e ules. In pa icula ,
when he unc ions l(ρ0) o (20) a e in oduced in (19), he
in eg als can be ew i en as
˜
i
l(kρ)=Z+1
−1
hi
l(kρ, )
√1− 2d (22)
whe e
hi
l(kρ, )=ρ2l−ρ1l
2Jikρρ2l−ρ1l
2 +ρ2l+ρ1l
2
×ρ2l−ρ1l
2 +ρ2l+ρ1l
2 (23)
The in eg als o (22) a e amenable o be compu ed by means
o Gauss-Chebyshe quad a u e ules [23, Eqn. 25.4.38]. In
pa icula , he in eg als should be app oxima ely ob ained by
means o he closed- o m o mula
˜
i
l(kρ)≈
Nqp
X
j=1
ηjhi
l(kρ, = j) (24)
whe e ηj=π/Nqp and j=cos (2 j−1)π/2Nqp(j=
1,...,Nqp) ( j=1,...,Nqp). Since he unc ions hi
l(kρ, ) a e
non-singula smoo h unc ions o in he in e al −1≤ ≤+1,
a low numbe o quad a u e poin s, Nqp, should su ice o
ob ain ˜
i
l(kρ) wi h a la ge accu acy. This has been con i med
by nume ical simula ions, as will be shown in Sec ion III.
Conce ning he in ini e se ies o (18), i s con e gence is
s ongly dependen on he alue o kρ,mn. The la ge he
alue o kρ,mn, he la ge he numbe o e ms ha has o be
e ained in he se ies o (18) o an accu a e de e mina ion o
e
Jd
lq(kxm,kyn). Le us see how he con e gence o his in ini e
se ies depends on kρ,mn. I we assume ha a≈b(which holds
in p ac ical cases o mos e lec a ay an ennas), by i ue o
he mean alue heo em o de ini e in eg als, we can w i e
ha (see [23, Eqn. 9.3.1])
|˜
i
l(kρ=kρ,mn)||i| ∝Jikρ,mn ρ2l+ρ1l
2|i|
≈Ji kρ,mna
2!|i|∝ ekρ,mna
4i!i
=eiln(ekρ,mna/4i)(25)
which indica es ha he se ies o (18) has an exponen-
ial con e gence p o ided ekρ,mna/4i≤1, i. e., p o ided
i≥ekρ,mna/4. Nume ical simula ions ha e shown ha he
in ini e se ies o (18) has o be added in he in e al 1 ≤
i≤ekρ,mna/4+8 o an accu a e es ima ion o e
Jd
lq(kxm,kyn).
The e o e, he la ge kρ,mn, he la ge he numbe o e ms o
be e ained in he se ies.
In p ac ice, he compu a ion o Γkl,pq equi es o unca e
he in ini e summa ions o (6) wi hin he in e als −Nmax ⩽
m,n⩽+Nmax. I we assume ha a≈b, he maximum alue
o kρ,mn we will ha e o use in (6) a e he unca ion will be
(see (16))
kmax
ρ,mn =q(kmax
xm )2+(kmax
yn )2≈√22πNmax
a(26)
which means he maximum numbe o e ms ha will be
necessa y o e ain in he in ini e se ies o (18) will be
imax =ekmax
ρ,mna
4+8≈πeNmax
√2
+8 (27)
Fo he cases ea ed in he esul s sec ion, we ha e used
Nmax =50, which leads o imax ≈310 when using (27). Fo
ou pu poses, his is he wo s case scena io in he e alua ion
o (18), i.e., any e alua ion o e
Jd
lq(kxm,kyn) wi hin −Nmax ⩽
m,n⩽+Nmax will equi e o e ain a mos 310 e ms in he
compu a ion o he in ini e se ies o (18) when Nmax =50.
Apa om he analy ical s op c i e ium es ablished abo e
o he summa ion o he se ies o (18) (1 ≤i≤ekρ,mna/4+8),
one addi ional ac ha helps o educe he CPU ime equi ed
in he compu a ion o his se ies is a well known p ope y o
Bessel unc ions, acco ding o which Ji(x)≈0 i x<x h =C hi
when i>N h. Nume ical simula ions show his p ope y holds
o N h a ound 10 and C h a ound 1. Acco ding o (19), his
p ope y o Bessel unc ions implies ha ˜
i
l(kρ=kρ,mn)≈0
in (18) when i>N h and (kρ,mna)/2<C hi, which makes i
unnecessa y he e alua ion o a la ge numbe o summa ion
e ms in he nume ical compu a ion o he se ies leading o
e
Jd
lq(kxm,kyn) by means o (18). In Sec ion III we will p esen
a nume ical me hod ha makes i possible o easily es ima e
wo new quan i ies d h(l) and b h(l) (which a e a unc ion o
ρ1land ρ2l) o which ˜
i
l(kρ)≈0 i kρa<d h(l)(i−b h(l))
and i≥b h(l). Acco ding o his, i will only be necessa y o
compu e ˜
i
l(kρ=kρ,mn) in he in e al
kmin
ρ,mn(i)=d h(l)(i−b h(l))
a≤kρ≤kmax
ρ,mn (28)
when i≥b h(l). Fo i<b h(l), we will ha e o compu e ˜
i
l(kρ=
kρ,mn) in he in e al kmin
ρ,mn(i)=0≤kρ≤kmax
ρ,mn.
The in eg als ˜
i
l(kρ) o (19) a e a unc ion o kρ,ρ1land
ρ2l o each alue o i. In mos applica ions o e lec a ay
an ennas he dis ances ρ1land ρ2l(l=1,...,L) emain ixed
om elemen o elemen and he angles ϕkl (k=1,...,S;l=
1,...,L) and α ( =1,...,R) a e a ied o ob ain he equi ed
phase shi s. So, a la ge amoun o CPU ime can be sa ed in
he design o a la ge e lec a ay an enna i he unc ions ˜
i
l(kρ)
(l=1,...,L;i=0,...,imax) a e in e pola ed as a unc ion
o kρ o ixed alues o ρ1land ρ2l, and he in e pola ions
a e subsequen ly used when adjus ing he angles ϕkl and α
in each elemen . The in e pola ions ha e o be pe o med
in he in e al kmin
ρ,mn(i)≤kρ≤kmax
ρ,mn o each alue o l
and i. In p ac ice, we ha e di ided he equi ed in e pola ion
in e als in o Nin subin e als, and we ha e used Chebyshe
polynomials up o se en h-deg ee in he in e pola ion in each
subin e al. In Sec ion III we will see ha a maximum numbe
o Nin =80 subin e als su ices o ob ain in e pola ed alues
o ˜
i
l(kρ) wi hin ou signi ican igu es, and ha he numbe
o equi ed subin e als Nin dec eases as iinc eases, which is
a consequence o he inc ease o kmin
ρ,mn(i) (and he e o e, o he
educ ion o he wid h o he o iginal in e pola ion in e al) as
iinc eases.
III. Nume ical esul s and alida ions
Figs. 3(a) and (b) show he ela i e e o s made in he e al-
ua ion o ˜
0
l(kρ) and ˜
100
l(kρ) by means o (24) as a unc ion

6
(a)
(b)
Fig. 3. Magni ude o he ela i e e o s in he compu a ion o (a) ˜
0
l(kρ) and
(b) ˜
100
l(kρ) by means o (24). The ela i e e o s a e plo ed as a unc ion o
he numbe o quad a u e poin s Nqp employed in (24). Pa ame e s: a=b=5
mm; ρ1l=1.85 mm; ρ2l=2.05 mm.
o kρ, and as a unc ion o he numbe o Gauss-Chebyshe
quad a u e poin s Nqp employed in (24). The e e ence alues
used o ˜
0
l(kρ) and ˜
100
l(kρ) ha e been compu ed by means
o he double exponen ial quad a u e ule wi h 203 in eg a ion
poin s (le el o he quad a u e ule M=5), since his is a
nume ical p ocedu e which is pa icula ly accu a e when used
in he in eg a ion o unc ions wi h in eg able singula i ies a
he end poin s o he in eg a ion in e al [24]. Please no e ha a
alue o Nqp equal o 10 su ices o p o ide 4 signi ican igu es
in he alues o ˜
0
l(kρ) and ˜
100
l(kρ) in nea ly all cases, which
indica es ha (24) p o ides alues ha a e accu a e enough
o ˜
i
l(kρ) wi hin a e y low CPU ime consump ion. In he
es o he esul s o his Sec ion, we will always use Nqp =10
in (24).
In Figs. 4(a) and (b) we plo he h eshold alues k h
ρ(i) as
a unc ion o i, whe e k h
ρ(i) a e he alues o kρ o which
|˜
i
l(kρ)/˜
0
l(kρ)|<10−4i kρ<k h
ρ(i) and |˜
i
l(kρ)/˜
0
l(kρ)|>10−4
i kρ>k h
ρ(i). The e o e, o e e y alue o i, he h eshold
alue k h
ρ(i) indica es he alue o kρbelow which ˜
i
l(kρ) can
be conside ed o be anishing. Please no e he plo o k h
ρ(i)
as a unc ion o i i s e y well o a s aigh line. So we ha e
ca ied ou a linea leas squa es i ing o k h
ρ(i) as a unc ion
o igi en by
k h
ρ(i)a≈d h(l)(i−b h(l)) (29)
which should be alid o i≥b h(l). Fo he leas squa es
i ing, we ha e used Nsam samples o iin ascending o de ,
ik(k=1,...,Nsam) he i s sample being i1=20. In
i
0 20 40 60 80 100 120 140 160 180 200
kρa
0
100
200
300
400
500
kρ
h(i)a
(a)
i
0 20 40 60 80 100 120 140
kρa
0
100
200
300
400
500
kρ
h(i)a
(b)
Fig. 4. The solid line k h
ρ(i)as ands o he h eshold alues o kρa o
which ˜
i
l(kρ) is negligible i kρa<k h
ρ(i)a, and ˜
i
l(kρ) is non-negligible i
kρa>k h
ρ(i)a.k h
ρ(i)ais plo ed as a unc ion o i. Pa ame e s: a=b=5 mm;
ρ1l=1.85 mm and ρ2l=2.05 mm in (a); ρ1l=1.20 mm and ρ2l=1.40 mm in
(b).
he case o Fig. 4(a), i u ns ou ha d h(l)≈2.343 and
b h(l)≈9.484 wi h a coe icien o de e mina ion 2=0.9999.
In he case o Fig. 4(b), i u ns ou ha d h(l)≈3.388 and
b h(l)≈8.371 wi h a coe icien o de e mina ion 2=0.9998.
These esul s indica e ha he alues o d h(l) and b h(l) a e
sligh ly dependen on he alues o he inne and ou e adii o
he ings, ρ1land ρ2l, which a e he endpoin s o he in eg a ion
in e al o (19). Since he i ing o k h
ρ(i) o a s aigh line o
i≥b h(l) is e y good, in p ac ice a small alue o he numbe
o samples o k h
ρ(i), Nsam, su ices o he de e mina ion o
d h(l) and b h(l). Once hese alues o d h(l) and b h(l) a e
known, one can use (28) o es ima e he in e al o alues o
kρin which he unc ions ˜
i
l(kρ) p esen non-negligible alues
wi h a iew o compu ing e
Jd
lq(kxm,kyn) ia (18).
Figs. 5(a) and (b) show he e o s made in he in e pola ion
o ˜
0
l(kρ) and ˜
100
l(kρ) in he in e al kmin
ρ,mn(i)≤kρ≤kmax
ρ,mn
when his in e al is di ided in o Nin subin e als o equal
wid h, and Chebyshe polynomials up o se en h-deg ee a e
subsequen ly used o ca y ou he in e pola ion in each subin-
e al. Please no e ha whe eas 80 subin e als a e equi ed o
he de e mina ion o ˜
0
l(kρ) wi h an accu acy o 4 signi ican
igu es in he whole in e al kmin
ρ,mn(i)≤kρ≤kmax
ρ,mn, only 40
subin e als a e equi ed o he de e mina ion o ˜
100
l(kρ)
wi h he same accu acy. The explana ion o his is ha
whe eas he whole in e pola ion in e al o ˜
0
l(kρ) is oughly
0≤kρa.450, he in e pola ion in e al o ˜
100
l(kρ) is much
smalle , 200 .kρa.450, which is a consequence o he ac
ha ˜
100
l(kρ) is negligible o kρa.200 as shown in Fig.4(a).
Fig. 6(b) shows he phase cu es equi ed o he design
7
(a)
(b)
Fig. 5. Magni ude o he ela i e e o s in he in e pola ion o (a) ˜
0
l(kρ)
and (b) ˜
100
l(kρ) as a unc ion o he numbe o subin e als Nin used in he
in e pola ion. Pa ame e s: a=b=5 mm; ρ1l=1.85 mm; ρ2l=2.05 mm.
o a CP e lec a ay an enna (see (2)) made o single spli
ings (see Fig.6(a)) a a equency o 19.95 GHz. By i ue o
he VRT o [2], a linea phase a ia ion is ob ained o bo h
∠RRHCP,RHCP and ∠RLHCP,LHCP as a unc ion o α2, which is
he o a ion angle o he mi o symme y axis o he spli
ing. In o de o keep he sense o CP a e e lec ion in
a e lec a ay an enna, we need a phase di e ence o 180◦
be ween he e lec ion coe icien o he componen o he
elec ic ield along he mi o symme y axis o he spli ing
and he e lec ion coe icien o i s o hogonal componen [2],
[3]. To ensu e his phase di e ence is main ained, he leng h o
he a cs in he e lec a ay elemen has o be sligh ly adjus ed
as α2is a ied [6]. This adjus men o he leng h o he a cs
as a unc ion o α2is shown in Fig. 6(c). In Fig. 6(b) we
show he con e gence o ∠RRHCP,RHCP and ∠RLHCP,LHCP as a
unc ion o he numbe o basis unc ions Nbused in he wo
a cs o he spli ings. I can be seen ha jus h ee basis
unc ions pe a c su ice o achie e con e gence (in ac , he
esul s ob ained wi h he h ee basis unc ions co esponding
o q=1,2,3 in (21) o e lap hose ob ained when Nb=7 and
1≤q≤7), which means ha only 6×6 MoM ma ices ha e o
be in e ed when analyzing he mul ilaye ed pe iodic s uc u e
con aining single spli ings in he uni cell. In o de o alida e
he esul s ob ained wi h he spec al MoM so wa e desc ibed
in Sec ion II, hese esul s a e compa ed wi h esul s p o ided
by he comme cial so wa e CST . Excellen ag eemen is
ound be ween bo h se s o esul s.
In Fig. 7(b) we plo he phase cu es o a dual- equency
CP e lec a ay an enna made o concen ic spli ings (see
b
a
y
z
x
y’
x’
23
j
23
j
13
a
2
13
(a)
α2 (deg)
20 40 60 80 100 120 140 160 180
RRHCP,RHCP and RLHCP,LHCP (deg)
-300
-200
-100
0
100
200
300
RLHCP,LHCP q=1,2
RLHCP,LHCP q=1,2,3
RLHCP,LHCP q=1,...,7
RLHCP,LHCP CST
RRHCP,RHCP q=1,2
RRHCP,RHCP q=1,2,3
RRHCP,RHCP q=1,...,7
RRHCP,RHCP CST
(b)
α2 (deg)
20 40 60 80 100 120 140 160 180
ϕ23 −ϕ13(deg)
147
147.5
148
148.5
149
149.5
150
150.5
(c)
Fig. 6. (a) Single spli ing. (b) Phase o RRHCP,RHCP and RLHCP,LHCP o
he e lec a ay elemen o (a) as a unc ion o he o a ion angle o he ing
α2. Con e gence is s udied wi h espec o he numbe o basis unc ions
(q=1,...,7) used in he wo a cs o he spli ings. Ou esul s ob ained wi h
he spec al domain MoM a e compa ed wi h esul s ob ained wi h CST . (c)
Va ia ion o he leng h o he a cs o he spli ing wi h he o a ion angle
α2 o ensu e a phase di e ence o 180◦in he e lec ion coe icien s o he
wo o hogonal linea componen s o he CP impinging wa es. Pa ame e s:
a=b=5 mm; ρ13=1.85 mm; ρ23=2.05 mm; h1=0.787 mm, ε ,1=2.2,
an δ1=0.0009; h2=0 mm; θinc =30◦,ϕinc=0◦; =19.95 GHz.
Fig. 7(a)). While he ou e ings a e in ended o adjus he
phase a 19.95 GHz, he inne ings a e in ended o adjus he
phase a 29.75 GHz as in [6]. In Fig.7(b) we plo he cu es o
phase adjus men a 29.75 GHz. Since his phase adjus men
is con olled by he inne ings, in he applica ion o he VRT
∠RRHCP,RHCP and ∠RLHCP,LHCP a e a ied by o a ing he mi o
symme y angle o he inne spli ing, α1, while keeping
ixed he mi o symme y axis o he ou e ing α2. No e
ha whe eas ∠RRHCP,RHCP and ∠RLHCP,LHCP a e linea unc ions
o α2in Fig. 6(b), ∠RRHCP,RHCP and ∠RLHCP,LHCP a e no any
longe linea unc ions o α1in Fig. 7(b). This is due o he
ac ha whe eas in Fig.6(b) he whole e lec a ay elemen is
8
b
a
y
z
x
13
y’
x’
j
13
j
21
j
11
21
11
a1
a
2
j
23
23
(a)
α1 (deg)
20 40 60 80 100 120 140 160 180
RRHCP,RHCP and RLHCP,LHCP (deg)
-300
-200
-100
0
100
200
RLHCP,LHCP q=1,2
RLHCP,LHCP q=1,2,3
RLHCP,LHCP q=1,...,7
RLHCP,LHCP CST
RRHCP,RHCP q=1,2
RRHCP,RHCP q=1,2,3
RRHCP,RHCP q=1,...,7
RRHCP,RHCP CST
(b)
α1 (deg)
20 40 60 80 100 120 140 160 180
ϕ21 −ϕ11(deg)
145
150
155
160
165
(c)
Fig. 7. (a) Two concen ic spli ings. (b) Phase o RRHCP,RHCP and
RLHCP,LHCP o he e lec a ay elemen o (a) as a unc ion o he o a ion
angle o he inne ing α1. Con e gence is s udied wi h espec o he numbe
o basis unc ions (q=1,...,7) used in he ou a cs o he wo spli ings.
Ou esul s ob ained wi h he spec al domain MoM a e compa ed wi h esul s
ob ained wi h CST . (c) Va ia ion o he leng h o he a cs o he inne
ing wi h he o a ion angle α1 o ensu e a phase di e ence o 180◦in he
e lec ion coe icien s o he wo o hogonal linea componen s o he CP
impinging wa es. Pa ame e s: a=b=5 mm; ρ13=1.85 mm; ρ23=2.05 mm;
ϕ13=−75.2◦mm; ϕ23=75.2◦mm; α2=0◦;ρ11=1.20 mm; ρ21=1.40 mm;
h1=0.787 mm, ε ,1=2.2, an δ1=0.0009; h2=0 mm; θinc =30◦,ϕinc=0◦;
=29.75 GHz.
o a ed o phase adjus men , in Fig. 7(b) only he inne pa
o he elemen is o a ed o phase adjus men , and he e o e
he p opo ionali y be ween phase and o a ion angle p o en in
[2] is los . Fo una ely, he o a ion o α1in Fig. 7(b) p o ides
enough phase ange o e lec a ay design. In Fig.7(c) we plo
he adjus men s in he leng h o he inne a cs ha a e needed
o keep a phase di e ence o 180◦be ween he e lec ion
coe icien s o he wo o hogonal componen s o he elec ic
ield o he impinging CP wa es. These adjus men s a e la ge
han in he case o Fig. 7(b), which is a ibu ed o he ac
TABLE I
CPU imes (seconds) equi ed o he gene a ion o 31 poin s in he cu es
o Figs.6(b)and 7(b). The CPU imes a e o ou MoMso wa e and CST .
Figu e TMoM
CPU TCST
CPU
Fig. 6(b) 89.8 2383
Fig. 7(b) 152.9 2486
TABLE II
CPU imes (seconds)con ibu ions (compu a ion o Hankel ans o ms,
in e pola ion o Hankel ans o ms,calcula ion o 2-D Fou ie ans o ms
o he basis unc ions and e alua ion o ma ix en ies) o he o al CPU
ime equi ed by ou MoMso wa e o he gene a ion o one poin in
Figs.6(b)and 7(b).
Figu e THT TINT T2DFT TME TMoM
TOTAL
Fig. 6(b) 0.398 0.0005 2.868 0.007 3.290
Fig. 7(b) 0.570 0.0008 4.871 0.020 5.477
ha he ou e a cs o he elemen a e no modi ied du ing
he p ocess o phase adjus men . As in Fig. 6(b), in Fig. 7(b)
con e gence o he spec al domain MoM so wa e is achie ed
wi h jus h ee basis unc ions pe a c (which equi es he
in e sion o 12×12 MoM ma ices), and excellen ag eemen is
ound be ween he spec al domain MoM so wa e and CST .
We ha e compu ed he CPU ime equi ed by CST o
gene a e 31 poin s o he cu es o Figs. 6(b) and 7(b), TCST
CPU,
and he CPU ime equi ed by he spec al domain MoM
so wa e when 3 basis unc ions pe a c a e employed, TMoM
CPU .
When unning he spec al MoM so wa e, we ha e used he
in e pola ed e sions o ˜
i
l(kρ), and we ha e included in TMoM
CPU
he CPU ime equi ed o compu e k h
ρ(i) and in e pola e he
unc ions ˜
i
l(kρ). The esul s ob ained o TCST
CPU and TMoM
CPU
a e shown in Table I. These CPU imes ha e been ob ained
in a lap op compu e wi h p ocesso In el Co e i7-6700HQ
a 2.6 GHz wi h ou co es and 32 GB o RAM memo y.
The MoM code has been w i en in FORTRAN language.
Acco ding o he esul s o Table I, he spec al MoM so wa e
is ypically 27 imes as e han CST in he analysis o he
pe iodic s uc u es s udied in Fig. 6(b), and a ound 16 imes
as e han CST in he analysis o he pe iodic s uc u es
o Fig. 7(b). When he spec al domain MoM desc ibed in
Sec ion II is applied o he analysis o one single pe iodic
s uc u e con aining spli ings, he e a e di e en nume ical
s eps ha ing di e en CPU ime con ibu ions o he o al CPU
ime equi ed by MoM, TMoM
TOTAL. These CPU ime con ibu ions
include he CPU ime equi ed o compu e he Hankel ans-
o ms ˜
i
l(kρ) ha a e needed o he in e pola ions by means o
(24), THT, he CPU ime equi ed o he in e pola ions o he
Hankel ans o ms by means o Chebyshe polynomials, TINT,
he CPU ime equi ed o he e alua ion o he 2-D Fou ie
ans o ms o he basis unc ions by means o (18), T2DFT,
and he CPU ime equi ed o he de e mina ion o he MoM
9
ma ix en ies by means o (6), TME. Table II shows hese
di e en CPU ime con ibu ions o TMoM
TOTAL ( he CPU imes
ha e been ob ained wi h he same compu e used o Table
I). In pa icula , he CPU imes p esen ed in Table II a e o
he pe iodic s uc u e analyzed in Fig. 6(b) when α2=92.9◦
(ϕ23 −ϕ13=150.4◦in Fig. 6(c)), and o he pe iodic s uc u e
analyzed in Fig. 7(b) when α1=92.9◦(ϕ21 −ϕ11=150.0◦
in Fig. 7(c)). No e ha he mos impo an con ibu ion o
he o al MoM CPU ime is T2DFT, which is a ound 88% o
TMoM
TOTAL. This jus i ies he e o s ca ied ou in Sec ion II o
compu e he Hankel ans o ms ˜
i
l(kρ) appea ing in (18) in
an e icien way. I we had no op imized he compu a ion o
˜
i
l(kρ), he me hod p esen ed in his pape would no ha e been
compe i i e by compa ison wi h comme cial so wa e. Once
he unc ions e
Jd
lq(kxm,kyn) o (18) ha e all been compu ed, he
CPU imes equi ed o compu e he double summa ions o (6)
and o sol e he sys em o equa ions o (5) a e negligible (no e
ha he maximum size o he MoM ma ices o be in e ed is
12 ×12). The nex impo an con ibu ion o he o al MoM
CPU ime is THT, which ep esen s a ound 11% o TMoM
TOTAL.
Table II shows he con ibu ion o he ime equi ed o he
in e pola ion o he Hankel ans o ms o TMoM
TOTAL is negligible.
A his poin , we should emembe ha he compu a ion and
in e pola ion o he Hankel an o ms has o be ca ied ou only
once in he design o a e lec a ay an enna whe e he inne
and ou e adii o he ings ρ1land ρ2l(l=1,...,L) emain
cons an in all he elemen s o he an enna. The e o e, we can
neglec he con ibu ion o THT o he CPU ime equi ed in
he design o a whole e lec a ay an enna. In ou s udy o
he compu a ional pe o mance o he spec al domain MoM
so wa e as a unc ion o he di e en inpu a iables in ol ed,
we ha e inally analyzed he compu a ional complexi y o
TMoM
TOTAL as a unc ion o he numbe o quad a u e poin s used
in (24), Nqp, as a unc ion o he numbe o e ms e ained in
in ini e se ies o (18), imax, and as a unc ion o he numbe
o basis unc ions used in he applica ion o MoM, Nb. We
ha e ound ha he e ec o Nqp on TMoM
TOTAL is i ele an o
3≤Nqp ≤15, ha he spec al MoM is oughly o complexi y
O((imax)2) o 48 ≤imax ≤200, and ha he spec al MoM is
oughly o complexi y O(Nb) o 1 ≤Nb≤7.
Based on he cu es o Figs. 6(b), 6(c), 7(b), and 7(c), a
dual- equency pencil beam CP e lec a ay an enna has been
designed. The an enna adia es LHCP a 19.95 GHz and RHCP
a 29.75 GHz as in he case o he an enna designed in [6].
The designed an enna is ci cula and consis s o 5024 elemen s
a anged in a 80 ×80 g id wi h cell size 5 mm ×5 mm ( he
diame e o he an enna is 400 mm). The an enna is in ended o
p oduce a ocused beam in he di ec ion θb=30◦and ϕb=0◦
(see [25, Fig. 5.a]). I is illumina ed by a co uga ed ci cula
eed-ho n wi h i s phase cen e loca ed a he coo dina es
x=−150 mm, y=0 mm, z=259.8 mm wi h espec o a
coo dina e sys em wi h o igin a he cen e o he e lec a ay
(see [25, Fig. 5.a]). The ho n is assumed o adia e LHCP
wa es a 19.95 GHz and RHCP wa es a 29.75 GHz. The
adia ion pa e n o he ho n is modelled as a unc ion cos7(θ),
which p o ides an illumina ion le el a he e lec a ay edges
12 dB below he maximum. The an enna elemen s a e dual
concen ic spli ings as hose shown in Fig.7(a). In he design
Azimu h angle (deg)
-50 -40 -30 -20 -10 0 10 20 30 40 50
Gain (dB)
-20
-10
0
10
20
30
40
Copola LHCP q=1,2,3
Copola LHCP CST
Copola LHCP HFSS
C osspola LHCP q=1,2,3
C osspola LHCP CST
C osspola LHCP HFSS
(a)
Ele a ion angle (deg)
-50 -40 -30 -20 -10 0 10 20 30 40 50
Gain (dB)
-20
-10
0
10
20
30
40
Copola LHCP q=1,2,3
Copola LHCP CST
Copola LHCP HFSS
C osspola LHCP q=1,2,3
C osspola LHCP CST
C osspola LHCP HFSS
(b)
Fig. 8. Radia ion pa e ns in (a) he azimu h plane and (b) he ele a ion plane
o a dual- equency CP e lec a ay based on an elemen wi h wo concen ic
spli ings. Plo s a e p esen ed o he analysis o he e lec a ay unde he
local pe iodici y assump ion wi h bo h ou spec al domain MoM so wa e
(solid and dash-do ed lines), CST (dashed and do ed lines) and HFSS (×
and +). The esul s plo ed a e o LHCP adia ion a 19.95 GHz.
o he an enna a 19.95 GHz, he dimensions and o ien a ions
o he ou e ings ha e been adjus ed in acco dance wi h
Figs. 6(b) and 6(c), while assuming he inne ings we e no
p esen . Howe e , when he an enna has been designed a
29.75 GHz, bo h he ou e and he inne ings ha e been aken
in o accoun . The dimensions and o ien a ions o he ou e
ings ha e been ixed a he alues ob ained o he design
a 19.95 GHz, and he dimensions and o ien a ions o he
inne ings ha e been adjus ed in acco dance wi h Figs. 7(b)
and 7(c). The design o he an enna has been ca ied ou by
means o he spec al domain MoM so wa e desc ibed in
Sec ion II unde he local pe iodici y condi ion, while using he
exac incidence angle in each e lec a ay elemen . Once he
e lec a ay an enna has been designed, i has been analyzed
wi h he spec al domain MoM so wa e (using h ee basis
unc ions pe a c wi h q=1,2,3 in (21)), and wi h he
wo comme cial so wa es CST and HFSS , unde he local
pe iodici y assump ion. In he analysis, he exac incidence
angle has been conside ed in each e lec a ay elemen . Figs.8
and 9 show he adia ion pa e ns ob ained in he azimu h and
ele a ion planes a 19.95 GHz and 29.75 GHz espec i ely.
The esul ing gain is 35.88 dBi a 19.95 GHz and 39.42 dBi
a 29.75 GHz. And he an enna e iciency is o 56% a 19.95
GHz and 57% a 29.75 GHz. In Fig. 8 he ag eemen be ween
ou MoM esul s, CST and HFSS is excellen . In Fig. 9
he ag eemen is excellen o he copola componen o he