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Synthesis of IDDQ-Testable Circuits: Integrating Built-in Current Sensors

Wunderlich, H J,Herzog, M,Figueras Pàmies, Joan,Carrasco, Juan A.,Calderón, A

Abstract

"On-Chip" I_{DDQ} testing by the incorporation of Built-In Current (BIC) sensors has some advantages over "off-chip" techniques. However, the integration of sensors poses analog design problems which are hard to be solved by a digital designer. The automatic incorporation of the sensors using parameterized BIC cells could be a promising alternative. The work reported here identifies partitioning criteria to guide the synthesis of I_{DDQ}-testable circuits. The circuit must be partitioned, such that the defective I_{DDQ} is observable, and the power supply voltage perturbation is within specified limits. In addition to these constraints, also cost criteria are considered: circuit extra delay, area overhead of the BIC sensors, connectivity costs of the test circuitry, and the test application time. The parameters are estimated based on logical as well as electrical level information of the target cell library to be used in the technology mapping phase of the synthesis process. The resulting cost function is optimized by an evolution-based algorithm. When run over large benchmark circuits our method gives significantly superior results to those obtained using simpler and less comprehensive partitioning methods.

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SYNTHESIS OF IDDQ-TESTABLE CIRCUITS: INTEGRATING BUILT-IN CURRENT SENSORS H.-J. Wunde lichl, M. He zogl J. Figue as2, J.A. Ca asco2, and A. Calde 6n2 (1)Ins i u e o Compu e S uc u es, Uni e si y o Siegen, Hoelde lins . 3,57068 Siegen, Ge many (2)Depa men o Elec onics Enginee ing, Uni e si a Poli ecnica de Ca alunya, Diagonal 647, pl a. 9,08028 Ba celona, Spain Abs ac "On-Chip" IDDQ es ing by he inco po a ion o Buil - In Cu en (BIC) senso s has some ad an ages o e "o - chip" echniques. Howe e , he in eg a ion o senso s poses analog design p oblems which a e ha d o be sol- ed by a digi al designe . The au oma ic inco po a ion o he senso s using pa ame e ized BIC cells could be a p o- mising al e na i e. The wo k epo ed he e iden i ies pa i ioning c i e ia o guide he syn hesis o IDDQ- es able ci cui s. The ci cui mus be pa i ioned, such ha he de ec i e IDDQ is obse able, and he powe supply ol age pe u ba ion is wi hin speci ied limi s. In addi ion o hese cons ain s, also cos c i e ia a e consi- de ed: ci cui ex a delay, a ea o e head o he BIC sen- so s, connec i i y cos s o he es ci cui y, and he es applica ion ime. The pa ame e s a e es ima ed based on logical as well as elec ical le el in o ma ion o he a - ge cell lib a y o be used in he echnology mapping phase o he syn hesis p ocess. The esul ing cos unc- ion is op imized by an e olu ion-based algo i hm. When un o e la ge benchma k ci cui s ou me hod gi es signi ican ly supe io esul s o hose ob ained using simple and less comp ehensi e pa i ioning me hods. 1 In oduc ion The es me hodology based on he obse a ion o he quiescen cu en (IDDQ) complemen s logic ( ol- age) es ing in CMOS echnologies. The quiescen cu en consumed by he IC is a good indica o o he p esence o a la ge class o de ec s escaping logic es [l-61. On-chip Buil -In Cu en (BIC) senso s ha e been p oposed o o e come some o he p oblems encoun- e ed in o -chip IDDQ es ing: long es ing imes and low disc imina ion o small de ec i e cu en s. These This wo k has been pe o med wi hin he amewo k o he ESPRIT P ojec 7107 A chimedes p oblems can be sol ed by pa i ioning he Ci cui Unde Tes (CUT) in subci cui s, each p o ided wi h a BIC senso . In ecen yea s, di e en BIC senso s ha e been p oposed [7-111. Some BIC senso s (i.e. pn junc i- ons o bipola de ices) in oduce a ol age d op du ing ansien swi ching which can be unaccep able in some applica ions due o i s e ec s in delay and noise ma - gin educ ion. Fo hese applica ions he BIC senso s ha e o inco po a e a bypass elemen so ha he pe - u ba ion in he i ual g ound is below a ce ain maxi- mum. The class o BIC senso s conside ed in his pape is illus a ed in igu e 1. The BIC senso includes a sen- sing de ice, a bypass MOS swi ch and a de ec ion ci - cui y. A con ol signal C is applied o he ga e o he bypass MOS de ice. Du ing no mal ope a ion, C = 1, u ns he MOS on. Du ing es ing, i s C is se o 1 and a es pa e n is applied o he CUT. When he ansien iDD cu en has decayed, C is se o 0, u ning he MOS o , and he sensing de ice p oduces a ol age signal which is p ocessed by he de ec ion ci cui y o p oduce a PASSFAIL signal, depending on whe he he sensed IDDQ alls below/abo e a gi en h eshold alue IDDQ,~~. Se e al sensing de ices can be used [7- 121, each wi h i s ad an ages and disad an ages. This kind o es abili y enhancemen may cause ex a delay and a ea o e heads as well as a educ ion o he noise immuni y ma gins [8,9,12,13,15], and he objec i e o a sophis ica ed BIC senso placemen should be minimi- zing hese d awbacks. Im- es o la ge CUTS canno be done e ec i ely using a single BIC senso . One ob ious eason is he need o an app op ia e disc iminabili y. E ec i e es o de ec s in CMOS ypically equi es IDDQ, h = IPA and non de ec i e IDDQ cu en s o la ge ci cui s can be la ge han 1 PA. Also, he la ge pa asi ic capaci ance in oduced a he sensing node by he CUT and he sen- sing de ice ad e sely impac s es imes. These p o- blems can be alle ia ed by pa i ioning he CUT in o 573 1066-1409/95 $4.00 0 1995 IEEE g oups o ga es and in oducing a BIC senso o each L de ec ion i ual GND - ci cui y - g oup [12,13]. + PASS / FAIL pe io i y o his app oach o e a s aigh o wa d manual BIC senso placemen . "DD 4 Figu e 1: A chi ec u e o a BIC senso wi h a bypass de ice. Fine-g ain pa i ions yield high disc iminabili y and low es imes bu incu in high a ea o e head due o he ( eplica ed) de ec ion ci cui y, ex a ou ing caused by he in oduc ion o he i ual ail and ou ing among BIC senso s. Coa se-g ain pa i ions ha e smalle a ea o e heads bu gi e smalle disc imina- bili ies and longe es imes. In addi ion, he ,,shape" o he g oups can ha e a g ea in luence on he equi ed BIC senso a ea. This is illus a ed in igu e 2, which shows wo di e en pa i ions o a CUT wi h a wo-di- mensional a ay s uc u e in ol ing h ee cell ypes. Pa i ion 1 has an a e age maximum iDD in each g oup smalle han pa i ion 2 as he h ee cells C1, C2, C3 will no swi ch in pa allel; hus, using pa i ion 2, he swi ching de ices ha e o be g ea e o gua an ee he same limi s o he i ual ail pe u ba ion, and pa i ion 1 should be p e e ed. Finding good pa i ions o IDDQ es abili y is a complex p oblem whe e disc iminabili y be ween aul y and aul ee cu en , a ea o e head, delay deg ada ion and es applica ion ime ha e o be conside ed. In his pape we p opose an e olu i e op imiza ion me hod o minimizing a cos unc ion subjec o es ic ions. The cons ain s a e disc iminabili y and i ual ail pe u ba- ion. The cos unc ion is ob ained by weigh ing es ima- o s o he di e en cos s in ol ed in he ade-o . These es ima o s make an app op ia e ade-o be - ween accu acy and compu a ion complexi y and a e e alua ed using pa ame e ized elec ical le el in o ma- ion o he a ge echnology. The es o he pape is o ganized as ollows. Sec ion 2 s a es o mally he pa - i ioning p oblem and i s cons ain s. Sec ion 3 de- sc ibes he es ima o s used in he cos unc ion. Sec ion 4 su eys he e olu ion op imiza ion algo i hm. The ex- pe imen al esul s discussed in sec ion 5 show he su- Pa i ion 1 ; BIC-Senso a BIC-Senso I BIC-Senso I Pa i ion 2 Figu e 2: Two pa i ions illus a ing he impac o he g oup shape in BIC senso a ea. 2. P oblem s a emen and cons ain s. To se -up o mally he pa i ioning p oblem, he CUT is modelled by a di ec ed g aph C = (G, T), whe e G is he se o ga es and T includes he connec ions among he ga es. .4 pa i ion Il o G is a collec ion {MI, ..., Mk} o disjoin g oups o ga es (modules) co- e ing G (U;"=, M, = G). Each ga e is comple ely included in one g oup, hence no ansis o g oup is spli among g oups, a oiding po en ial la chup p oblems [11,14]. Le IDDQ,~~ be he minimum de ec i e IDDQ cu en which has o be de ec ed and le IDDQ,~,, be he maximum non-de ec i e cu en o module M, The disc iminabili y o M, is de ined as 'DDQ. h 2d. IDDQ.nd.1 4 (4 1 = Fo he easibili y o an IDDQ es , d > 1 is equi ed, 574 and a ypical alue is 10. This es ic ion can be ex- p essed by a cons ain e alua ion unc ion de ined on he se o all possible pa i ions P as : P -+ (0,l) wi h K V d(Mi) 2 d i=l (n) = 1 The o he a ge s conce ning speed and a ea can be desc ibed by a global cos unc ion C on each pa i- ion. I is de ined as C: P -+ R in e ms o he ela i e weigh s ai o he me ics ci: n i=l The pa ame e s de ined abo e allow es ablishing he global cos unc ion o op imiza ion in he design space Speed-A ea-Tes abili y acco ding o di e en p io i ies e lec ed on he alues o he weigh ac o s ai. Cons ain s and cos s lead o a pa i ioning p oblem as ollows: Pa i ioning P oblem PART-IDDQ : Find a pa i- ion ll* sa is ying he cons ain s (Il*) and a he same ime minimizing he global cos unc ion c(n*). In gene al, his p oblem is NP-ha d, and heu is ics o ind accep able solu ions a e p oposed. In addi ion, he p ecise e alua ion o he cons ain s and he cos unc ions a e elec ical le el p oblems which a e no sol able in accep able ime excep o e y small ci - cui s. In he nex sec ion, app oxima e es ima ing p o- cedu es a e p esen ed using he ga e le el desc ip ion o he CUT and he a ge cell lib a y. 3 Maximum cu en and cos es ima o s In his sec ion a se o es ima o s o he a iables necessa y o e alua e he cons ain s and cos s a logic le el a e p oposed. A a ge cell lib a y ully cha ac e- ized a elec ical le el is assumed a ailable. 3.1 A pe u ba ion o he Vi ual G ound (Vi ual VDD) is caused by he inco po a ion o he I~SQ (IDDQ) BIC senso s. This a ia ion o he powe supply ol age cau- ses a educ ion o he noise immuni y ma gins. In addi- ion, ci cui s wi h memo y elemen s may loose he memo ized in o ma ion. The wo s pe u ba ion occu s du ing swi ching when he cu en is maximal. A con- s ain pu on his ol age d opping is usual o choosing he size o he BIC senso s. The ol age d opping de- pends on he maximum ansien cu en D,,,,,j h ough module Mi and on he senso a ea. Fo each module Mi he maximum ansien cu en A ea o e head due o BIC sensing. is es ima ed by he maximum numbe o ga es o modules swi ching simul aneously. In o de o es ima e a alue a logic le el we assume ha all ga es loca ed a he same dep h on di e en pa hs, swi ch in a way ha hei maximum cu en s add. This is a pessimis ic assump ion as we do no conside pa hs possibly blocked. This simpli ies he p oblem, and only he possible pa hs o all ansi ions and he maximum simul anei y o ansi ions a e iden i ied. Fo each ga e gi all possible Li ansi ion pa hs and he imes o ansi ion .. a i al a e de e mined. In his way a se o in- ege s i, i,. . ., & , ..., 'pL, is compu ed indica ing he possible imes o ansi ions a he ga e gi o each pa h Pk, whe e k:= 1 ,..., Li. An uppe limi o max(iDD} o a g oup Mi o ga es is compu ed by 1 The es ima e o DD,mm,, is app oxima e and pessimis ic, bu is compu a ionally e icien enough o allow explo a ion o a la ge numbe o pa i ions in easonable amoun s o CPU ime. Le Rs,~ be he ON esis ance o he BIC senso o Mi, he maximum i ual ail pe u ba ion can be ap- p oxima ed by Rs,i * DD,m,,i. The maximum i ual ail pe u ba ion o each module is limi ed o a gi en p ede ined alue , yielding * Since he equi emen s o a e ypically e y s ingen (be ween l00mV and 300mV) he impac o he easible Rs,~ on he delay o he CUT ends o be small. Then, o simpli y he op imiza ion p oblem we ake: * .. I Rs,i = , l4iIK. The senso a ea cos es ima o is compu ed using an a ea model o he o m 4 +A, I Rs o each BIC senso , whe e he e m 4 accoun s o he de ec ion ci cui y and he e m AI I Rs accoun s o he sensing elemen and he bypass de ice. This gi es DD, max,i As all componen s o he objec i e unc ion should ha e simila ange and a ia ion o op imiza ion easons we ac ually compu e CI (II):= log(A) 515 3.2 Delay o e head due o BIC senso s. The delay o e head cos is compu ed as: whe e D is he delay o he ci cui wi hou BIC senso s and DBIC is he delay o he ci cui wi h BIC senso s. Bo h delays a e compu ed using a longes pa h algo- i hm. The ga e delays DBIc(g, ) ( hese delays a e ime g id unc ions) used o DBIC a e ob ained om he nominal ga e delays (wi hou BIC senso ) D(g) and deg ada ion ac o s 6(g, ) as The ga e delay deg ada ion ac o 6(g, ) is ob- ained using a second o de elec ical ne wo k model ha ing as pa ame e s Rs ( he BIC senso ON esi- s ance), Cs ( he pa asi ic capaci ance a he i ual ail node), Cg ( he equi alen capaci ance a he ou - pu o g), Rg (an a e age equi alen ON esis ance o he discha ging ne wo k o a ga e o he CUT), and n( ) ( he ac i i y-numbe o simul aneously swi ching ga es a ime ). Wi h hese assump ions he exp es- sion o he ga e delay deg ada ion becomes The in e connec ion cos s a e di ided in o cos s o linking he BIC senso s o he ga es wi hin each mo- dule, and he cos s o connec ing he BIC senso s o all modules by he es clock and es ou pu . The mo- dule in e connec ion cos s ake in o accoun he di i- cul y in sensing ga es placed in emo e loca ions. The sepa a ion pa ame e S(gj,gj) o wo ga es gj and gj is he minimum numbe o nodes a e sed when going om gj o gj in he undi ec ed g aph o he logic ci - cui . I S(gj,gj) exceeds a ce ain pa ame e say p, o i no pa h exis s be ween gj and gj, we se The sepa a ion pa ame e S(M) o a module M is de ined as he sum o he sepa a ion pa ame e s o all ga e pai s: S(gi,gj):= P. R; .Rj EM In ui i ely, he pa ame e dec eases i many nodes o S(M) a e connec ed, and i is minimum i M is a clique o he undi ec ed ci cui g aph. The o e all in e connec ion cos o a pa i ion El o K g oups o ga es Mk whe e k = 1,. . ., K can be es i- ma ed by: K S(n) = S(Mk >. k=l As a cos unc ion we use c3 (El): = log( S( n)). The calcula ion ime o his me ic g ows quad a- ically wi h he numbe o ga es o each pa i ion g oup Mk. Since, in p ac ice, he numbe o ga es o a pa - i ion g oup is ela i ely small he p oblem is no oo se e e. As also he senso s mus be in e connec ed by he es clock line and he es signal line we use ~,(n):= K. 3.4 Tes applica ion cos s. The es applica ion ime o a p ecompu ed es ec- o se o he global CUT is es ima ed. Since he p opo- sed pa i ioning app oach does no modi y he logic s uc u e, he es ec o se needed o achie e a ce - ain quali y goal, does no change. Howe e , he ime equi ed o each ec o may be signi ican ly di e en due o di e en IDDQ se ling imes o di e en pa i- ions. Fo he es applica ion ime we use we e DiIc is he sum o DBIc and a e m A(zi) ac- coun ing o he iDD decay ime and he sensing ime, es ima ed om SPICE le el simula ions as a unc ion o he BIC senso ime cons an ZS,~ = Rs,iCs,i ((2s.; is he pa asi ic capaci ance a he i ual ail o g oup Mi ). 4 Pa i ioning Algo i hm Looking o a pa i ion ha sa is ies condi ion (n) and minimizes he cos unc ion is a e y complex, NP- ha d op imizing p oblem, and i is impossible o e alua e he cos unc ion C(n) o all he pa i ions. Also e alua ing C(n) o a single pa i ion is a he complex as i a ies be ween O(n) and O(m;) whe e mi is he size o a module. Hence a heu is ic algo i hm is needed which e alua es jus a mode a e numbe o pa i ions bu is no caugh in a local minimum. A a ie y o algo i hms has been p oposed o such kind o p oblems ( o ce-d i- en, simula ed annealing, Mon e Ca lo, gene ic, e. g.), in his pape an e olu ion-based algo i hm is applied. 576 4.1 Sol ing combina o ial p oblems by e olu ion based algo i hms Fo con olling he op imiza ion s eps an e olu ion- based algo i hm is adap ed [17,18,19]. A single cycle o such an algo i hm consis s o h ee s eps epea ed su i- cien ly o en: ecombina ion, mu a ion, and selec ion. Recombina ion: A popula ion consis s o a numbe o indi iduals called pa en s which co espond o pa i- ions in ou case. These pa en s p oduce descendan s by ecombining hei a ibu es. In ou case i u ned ou ha his s ep should be simpli ied such ha jus one pa- en is su icien o a child, and ecombina ion is jus duplica ion. Mu a ion: The child pa i ions a e modi ied an- domly co esponding o ce ain ules. These ules en- su e ha he modi ied pa i ion is s ill in he neighbou - hood o he o iginal one. Selec ion: The indi iduals p oduced so a a e e alua ed. The bes o hem a e he pa en s in he nex cycle. The con e gence o his p ocedu e depends on he s a popula ion, and on he se o con ol pa ame e s used. 4.2 Adap a ion o PART-IDDQ The s a pa i ions a e de e mined by simpli ying he cos unc ion such ha jus cl(l7) (a ea o e head) and cz(Il) (delay o e head) a e conside ed. Fi s he app op ia e module size is es ima ed. This can be done by e alua ing cl(Il) and c,(Il) by a e age numbe s o he equi ed pa ame e s and by abs ac ion om s uc u al in o ma ion. Then ga es a e clus e ed o mo- dules as ollows: s a ing om a ga e close o a p ima y inpu ga e, chains a e o med owa ds a p ima y ou pu . The p ocess s ops i his pa h eaches a p ima y ou pu , o i he e is no ee ga e anymo e, o i he maximum module size is eached. Modules a e o med as long as he e a e ee ga es. Using di e en chains he equi ed numbe o s a pa i ions is cons uc ed. The e olu ion cycle is con olled by a se o pa a- me e s as p oposed in [ 18,193 : CL: Numbe o pa en s h: Numbe o child en pe pa en x: Numbe o Mon e Ca lo descendan s 0: Maximum li e ime m: Maximum numbe o ga es o be mo ed E: Va ia ion o m The e olu ion cycle s a s wi h p di e en s a pa - i ions Ill,. . . , Ilp . Child en a e gene a ed by copying each o he pa en indi iduals A imes, and by mu a- ion a e wa ds. The mu a ion scheme o each o he (p*A) de- scendan s is as ollows: A module Mi a om he pa - i ion I?:= {M:, ...,Mii} is selec ed, and he numbe mbpu,& y o i s bounda y ga es is de e mined. A ga e o Mi a is a bounda y ga e i i is di ec ly connec ed o a ga e ou side Mi a . As a uni o mly dis ibu ed andom a iable we selec he ac ual numbe mmo e E {I ,..., min{m,m~ounda y)) o ga es o be mo ed. The m,,,, ga es a e chosen andomly, and pu in o he a ge module hey a e connec ed wi h. I hey a e connec ed wi h se e al a ge modules a andom one is chosen. In addi ion o hese (p*A) mu a ed child en, (p *x) Mon e-Ca lo child en a e gene a ed. Again, each pa en indi idual is copied x imes. A andom numbe o ga es o a andom module AIs a is mo ed in o a andom module M a ee . The andom a ia ion o hese descendan s is highe compa ed wi h mu a ions, and hey educe he p obabili y o being caugh in a lo- cal minimum. I all ga es o M,,, a e mo ed, his module is dele ed. A e ga e mo ing, cos s a e ecom- pu ed jus o he modi ied modules, and he global cos s o he pa i ion a e upda ed. As no he en i e cos unc ion has o be ecompu ed, he pa i ions gene a ed his way can be e alua ed e y e icien ly. A e exchanging ga es, he s ep wid h o mu a ion m is ecompu ed o each descendan . The new m is subjec o no mal dis ibu ion wi h a iance E a ound he m o s ep be o e. This scheme esul s in (1 + A + x) * p pa i ions. Du ing selec ion, all pa en indi iduals olde han o gene a ions a e dele ed. Ou o he emaining ones, he p pa i ions wi h bes cos unc ions a e selec ed as pa en s o he nex cycle. i 4.3 Example The pa i ioning s eps a e illus a ed using he ISCAS85 benchma k ci cui C17 as an example [16]. Fi s s a pa i ions Ill,. . . , lIp ha e o be cons uc ed as desc ibed abo e, igu e 4 shows pa i ion Ill. The ecombina ion s ep c ea es pa i ion Il: by duplica ing Ill. Du ing mu a ion Ms a := (4,6) is selec ed an- domly, and he bounda y ga es Sboud:= {g4,&} a e de e mined. Randomly m,,,, = 1 and g4 as ga es o be mo ed a e chosen. Wi h M a ge = (2,3) he descendan is shown in igu e 4. Du ing he nex gene a ion he al- go i hm c ea es pa i ion Il:, M,,,: = (2,3,4) is selec- ed and he bounda y se becomes Sbound = {g2, g3, g4 1 . Then ga e g3 mo es o module (6) ( igu e 5). Fo he las s ep he algo i hm selec s module (3,6) o n:. Now bo h ga es g3, g4 mo e o hei speci ic des ina- ion-modules and module (3,6) becomes emp y. A e hese 3 gene a ions he pa i ion Il consis s o wo modules (1,3,5), (2,4,6) and is he op imum pa i ion o C17. 511 I5 I4 I3 I2 I1 02 03 I5 I4 I3 I2 I1 02 03 I5 I4 I3 I2 I1 02 03 Figu e 5: IIi = {(1,5)(2,4)(3,6)], II = {(1,3,5)(2,4,6)} 5 Expe imen al Resul s In his sec ion we p esen a s aigh o wa d me hod o s anda d pa i ioning, and we compa e he esul s o he me hods discussed so a . The p ocess o s anda d pa i ioning s a s wi h a ga e as nea o a p ima y inpu as possible. New ga es a e added un il a speci ied size o he module is gene- a ed, he module size can be de e mined elec ically as desc ibed in sec ion 3, in ou case we ake he num- be s ob ained by he e olu ion based algo i hm. The new ga e added is ha ga e whose pa h leng h o all he ga es al eady clus e ed gi es a minimum sum. I he e a e mul iple choices, a ga e o his se is selec ed such ha he pa h leng hs o all he ga es no ye clus e ed gi e a maximum sum. A pa i ion gene a ed his way con ains modules such ha hei ga es a e connec ed mos closely. 5.1 Pa i ioning he ISCASS5 Ci cui s As all componen s o he cos unc ion should ha e simila ange and a ia ion o op imiza ion easons and in o de o ob ain IDDQ- es able ci cui s wi h minimal a ea-o e head which s ill sa is y pe o mance equi e- men s, he ollowing weigh ac o s we e chosen: C(n) = 9 * c1 (n) + IO5 * c2 (n) + c,(n) + c4 (n) + 10 * c5 (n) The e olu ion-based algo i hm was applied o he ISCAS85 ci cui s using his cos unc ion un il he e- sul s con e ged o a s able alue. compu ing ime de- pends on he s a popula ion, and is no de e minis ic. Bu e en o he la ges ci cui con e gence was ob- ained wi hin a ew hou s on a Sun Spa c wo ks a ion. The esul s a e lis ed in able 1. A s anda d pa i ioning needs om 14.5% o 30.6% mo e ha dwa e o BIC senso s han he op imal pa i- ioning o he e olu ion based algo i hm, bu does no show any imp o emen in sys em pe o mance and es ci cui 11 C1908 1 C2670 I C3540 I C5315 I C6288 I C7522 #modules II 2 I 3 I 4 I 6 I 5 I 6 a ea o BIC senso s senso a ea o e head s anda d 1.08E+6 5.67E+5 2.79E+6 2.87E+6 9.19E+5 5.65E+6 8.27E+5 4.95E+5 2.27E+6 2.29E+6 7.30E+5 4.72E+6 o s an- 30.6% 14.5% 22.9% 25.3% 25.9% 19.7% e olu ion 5.95E-2 e olu ion 5.94E-2 Table 1 : Resul s o s anda d pa i ioning and e olu ion-based pa i ioning. 578 pe o mance. Delays and applica ion imes a e gi en as pe cen age how he inco po a ion o BIC senso s slows down pe o mance. The a ea o he BIC senso s is gi en in uni s whose ac ual size depends on echnology. As echnology mapping is no ca ied ou so a wi ing is no conside ed. Since bo h in case o he s anda d and he e olu ion-based app oach he numbe o modules is he same, he ac ual ou ing cos s a e no expec ed o di e signi ican ly. 6. Conclusions Pa i ioning c i e ia a e es ablished o guiding he au oma ed design o IDDQ- es able ci cui s. They a e exp essed by a mul i- a ge objec i e unc ion o be op- imized by an e olu ion-based algo i hm. Ci cui ex a delay, a ea o e head o he BIC senso s, connec i i y cos s o he es ci cui y, and he es applica ion ime a e conside ed as cos c i e ia. The pa ame e s a e es ima ed based on logical as well as elec ical le el in o ma ion o he a ge cell lib a y o be used in he echnology mapping phase o he syn hesis p ocess. Fo he benchma k ci cui s in es iga ed, he inal design is supe io o esul s o a s anda d pa i ioning. So a only esyn hesis o including BIC senso s has been conside- ed. Nex s ep is con olling he logic syn hesis p oce- du e such ha he p esen ed cos unc ion is conside ed a he ea ly beginning. 7. Glossa y BIC: CUT, C: n: gi: M: n:={Gi, ..., GK}: d: : P -+ (0,l): ai : CI : C: : Li : : ASj 6SlC : buil -in cu en senso ci cui unde es numbe o ga es o CUT ga e numbe i g oup o ga es (module) pa i ion, disjoin g oup o ga es disc iminabili y o aul y and aul - ee case cons ain s weigh ac o cos unc ion global cos unc ion maximum i ual g ound pe u ba ion ansi ion pa h ansi ion ime o pa h j a ea o BIC senso i delay wi h connec ed BIC senso delay wi hou BIC senso o ced sepa a ion pa ame e numbe o pa en s h: x: 0: m: E: Re e ences numbe o child en pe pa en numbe o Mon e Ca lo descendan s maximum li e ime maximum numbe o ga es o be mo ed a ia ion o m C. F. Hawkings and J. M. Soden,. ,,Elec ical cha ac e- is ics and es ing conside a ions o Ga e Oxide Sho in CMOS ICs," in P oc. IEEE In e na ional Tes Con e- ence, pp. 544-555, Washing on, No embe 1985 W. Maly, P. K. Nag and P. Nigh, ,,Tes ing o ien ed analysis o CMOS ICs wi h opens," in P oc. 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