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Brief Theoretical Overview of Bi-Fe-O Based Thin Films

Abstract

This paper will provide a brief overview of the unique multiferroic material Bismuth ferrite (BFO). Considering that Bismuth ferrite is a unique material which possesses both ferroelectric and magnetic properties at room temperature, the uniqueness of Bismuth ferrite material will be discussed. Fundamental properties of the material including electrical and ferromagnetic properties also will be mentioned in this paper. Electrical properties include characterization of basic parameters considering the electrical resistivity and leakage current. Ferromagnetic properties involve the description of magnetic hysteresis characterization. Bismuth ferrite can be fabricated in a different form. The common forms will be mentioned and include powder, thin films and nanostructures. The most popular method of producing thin films based on BFO materials will be described and compared. Finally, the perspectives and potential applications of the material will be highlighted.

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Brief Theoretical Overview of Bi-Fe-O Based Thin Films

Author: Misiurev, Denis; Holcman, Vladimír; Kaspar, Pavel
Publisher: MDPI
Year: 2022
DOI: 10.3390/ma15248719
Source: https://dspace.vut.cz/bitstreams/bd9c0ad0-e1df-4c9f-b758-fb4841b3eac3/download
Ci a ion: Misiu e , D.; Kaspa , P.;
Holcman, V. B ie Theo e ical
O e iew o Bi-Fe-O Based Thin
Films. Ma e ials 2022,15, 8719.
h ps://doi.o g/10.3390/
ma15248719
Academic Edi o s: Tamas Va ga and
An onio San aga a
Recei ed: 5 Oc obe 2022
Accep ed: 5 Decembe 2022
Published: 7 Decembe 2022
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Copy igh : © 2022 by he au ho s.
Licensee MDPI, Basel, Swi ze land.
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A ibu ion (CC BY) license (h ps://
c ea i ecommons.o g/licenses/by/
4.0/).
ma e ials
Re iew
B ie Theo e ical O e iew o Bi-Fe-O Based Thin Films
Denis Misiu e * , Pa el Kaspa * and Vladimí Holcman
Depa men o Physics, Facul y o Elec ical Enginee ing and Communica ion, B no Uni e si y o Technology,
Technicka 2848/8, 61600 B no, Czech Republic
*Co espondence: [email p o ec ed] (D.M.); [email p o ec ed] (P.K.)
Abs ac :
This pape will p o ide a b ie o e iew o he unique mul i e oic ma e ial Bismu h e i e
(BFO). Conside ing ha Bismu h e i e is a unique ma e ial which possesses bo h e oelec ic and
magne ic p ope ies a oom empe a u e, he uniqueness o Bismu h e i e ma e ial will be discussed.
Fundamen al p ope ies o he ma e ial including elec ical and e omagne ic p ope ies also will be
men ioned in his pape . Elec ical p ope ies include cha ac e iza ion o basic pa ame e s conside ing
he elec ical esis i i y and leakage cu en . Fe omagne ic p ope ies in ol e he desc ip ion o
magne ic hys e esis cha ac e iza ion. Bismu h e i e can be ab ica ed in a di e en o m. The
common o ms will be men ioned and include powde , hin ilms and nanos uc u es. The mos
popula me hod o p oducing hin ilms based on BFO ma e ials will be desc ibed and compa ed.
Finally, he pe spec i es and po en ial applica ions o he ma e ial will be highligh ed.
Keywo ds:
Bismu h e i e; mul i e oic; hin ilm; e oelec ic; magne ic; PDL; ALD; leakage
cu en ; hys e esis
1. In oduc ion
The cu en ends equi e mo e minimalis ic echnologies and highe ene gy e iciency
which leads o an inc easing in e es o de eloping new ypes o ma e ials. Recen ends
o ma e ial science equi e in en ion o new ma e ials which would e ec i ely combine
mul iple p ope ies oge he wi h empe a u e and chemical s abili y. New and popula
ends o designing mode n de ices in ol e con ol o bo h magne ic and elec ical pa s,
hus c ea ing mul i unc ional de ices wi h a combina ion o e oelec ic and e omagne ic
e ec s. This combina ion o e s pe spec i e oppo uni ies o designing new and complex
mic oelec onic sys ems. The ma e ials, which combine bo h e oelec ic and magne ic
p ope ies, a e ex emely a e and i al o sol ing a wide a ie y o p oblems and a e
implemen ed in many applica ions.
Mul i e oic ma e ials s and ou , since hei elec ical and magne ic p ope ies can
be changed by he elec omagne ic ield. Mul i e oic ma e ials aim o sol e he p oblem
ela ed o c ea ing mo e ene gy–e icien mic oelec onics and applica ions wi h as e
speed eac ion, elecommunica ion, e c.
The ac ual de ini ion o he wo d mul i e oic s ands o combina ion o e oelec ic
and e omagne ic e ec o a ma e ial. The cu en de ini ion o mul i e oic also includes
he an i e oelec ic e ec . Nowadays, mul i e oic ma e ials d aw a lo o a en ion as hey
can be implemen ed in a wide a ie y o new de ices and de ec o s. Since mul i e oic
ma e ials exhibi e oelec ic and magne ic p ope ies, hey became an essen ial pa o
many nanos uc u es. These ma e ials also equi e less powe han con en ional sys ems
o ope a e.
A unique ad an age o single phase mul i e oic based hin ilm ma e ials is he
ac ha hey sugges appealing and p ospe ous ways o c ea ing new ma e ials wi h a
unique combina ion o di e en subs a es which emphasize he ad an ages o indi idual
ma e ials. Single phase mul i e oic ma e ials which exhibi s ong magne ic coupling a e
a e. The e o e, bismu h e i e is he only in ensi ely s udied ma e ial.
Ma e ials 2022,15, 8719. h ps://doi.o g/10.3390/ma15248719 h ps://www.mdpi.com/jou nal/ma e ials
Ma e ials 2022,15, 8719 2 o 28
BFO is a mul i e oic ma e ial wi h g ea po en ial. BFO is an ou s anding ma e ial
which possesses e oelec ic and magne ic p ope ies simul aneously. The ma e ial has a
signi ican ad an age in e ms o pho o ol aic de ices due o a na ow bandgap, supp es-
sion o ecombina ion o elec on–hole pai and wide abso p ion ange. Manipula ion o
elec omagne ic coupling by elec ic o magne ic ield makes BFO-based ma e ials po en ial
candida es o spin onic applica ions.
Thin ilms o BFO ma e ial we e and s ill a e e y popula o he de elopmen o
mode n nanoma e ials. Thin ilms allow nume ous modi ica ions o mo phology and hick-
nesses o he inal p oduc . In compa ison o BFO ce amics, hin ilms can be p oduced in a
ela i ely low ange o ope a ional empe a u es, which enhance he o e all pe o mance
o he inal ilm. BFO–based hin ilms we e widely used in e oelec ic memo y s o age
de ices due o high emanen pola iza ion. In addi ion o memo y de ices, hin ilms play
an impo an ole in minia u e an ennas and mic owa e MEMS de ices.
O e he pas decade, BFO has been in ensi ely used in BFO–based ce amics due o i s
high empe a u e esis ance and he coexis ence o pa a– e o elec ic phases. In addi ion
o he mo pho opic phase bounda y, he pe o ski e chemical s uc u e o BFO ma e ial
allows implemen a ion o impu i ies, hus enhancing elec omagne ic coupling. Ano he
conside able ad an age o BFO ma e ial is manipula ion wi h i s e o o oidic sys em by
he elec ic/magne ic ield. These p ope ies combine wi h he high conduc i i y o BFO
and make i a p omising ma e ial o he de elopmen o BFO–based ce amics.
Al hough an ou s anding ma e ial wi h unique p ope ies among o he ma e ials,
he e a e s ill challenges ha need o be add essed in he nea u u e. I is necessa y o ind
po en ial solu ions o dec ease high pa asi ic cu en and inc ease ela i ely low elec o-
magne ic coupling o implemen a ion in o la ge-scale de ices. The physical mechanism o
pho o ol aic esponse is s ill unknown and equi es u he and deepe in es iga ion.
2. Cha ac e iza ion o Bismu h Fe i e Ma e ial
BFO ma e ial is one o a ew mul i e oic ma e ials which shows a simul aneous
e oelec ic and e omagne ic e ec [
1
]. The ma e ial was in ensi ely s udied o e he
pas decade because o BFO e sa ile mul i unc ionali y. I was p o en ha BFO is he
only ma e ial which has he s onges elec omagne ic coupling a oom empe a u e ange
among all po en ial ma e ials making i an excellen candida e [
2
] o e oelec ic senso s.
Conside ing all mul i e oic ma e ials, hin ilms based on BFO ha e been success ully
used o mic oelec onic and op oelec onic de ices due o low band gap. The p incipal
o e oelec ici y a oom empe a u e is based on a lone–pai mechanism, whe e alence
elec ons o Bi
+3
c ea e a localized magne ic dipole and a e in ol ed in SP–hyb idiza ion [
3
].
The local magne ic dipole leads o he c ea ion o spon aneous ( emnan P [
3
]) pola iza ion
a ound 90–100 (
µ
Ccm
−2
) [
4
,
5
] which is a main eason BFO is an excep ional mul i e -
oic ma e ial.
Magne oelec ic ma e ials belong o mul i e oic ma e ials wi h a co ela ion o mag-
ne ic and e oelec ic p ope ies. Magne ic p ope ies (magne iza ion) and elec ic p op-
e ies (pola iza ion) can be con olled by he elec ic and magne ic ield. The ma e ial is
syn hesized in o single and mul i–phase molecules.
BFO is popula no only due o i s he mal s abili y bu also due o i s high ange o
pola iza ion (~90–100 µCcm−2) [4,5].
2.1. S uc u al Cha ac e iza ion o BFO Ma e ial
The mos common c ys alliza ion o m o Bismu h e i e ma e ial is a c ys allog aphic
s uc u e ep esen ed by a symme ic hombohed al (Figu e 1) [
2
,
3
,
6
] cen ally o ien a ed
pe o ski e [
6
] s uc u e whe e pa ame e s a, b a e la ice pa ame e s and c is a hexago-
nal pa ame e . The ypical e omagne ic pe o ski e pa ame e s o BFO ma e ial s and
wi hin
a = b = (5.7–6.7)
Å [
7
,
8
] and hexagonal c = (13–14) Å [
5
,
9
]. The angle
α
is a ound
60 deg ees
[
10
]. The space g oup o ien a ion is R3c. The pa ame e s o he cubic hombohe-
d al s uc u e a e a = b = c ~4 Å and angle αs ays oughly unde 90 deg ees.
Ma e ials 2022,15, 8719 3 o 28
Ma e ials 2022, 14, x FOR PEER REVIEW 3 o 28
2.1. S uc u al Cha ac e iza ion o BFO Ma e ial
The mos common c ys alliza ion o m o Bismu h e i e ma e ial is a c ys allo-
g aphic s uc u e ep esen ed by a symme ic hombohed al (Figu e 1) [2,3,6] cen ally
o ien a ed pe o ski e [6] s uc u e whe e pa ame e s a, b a e la ice pa ame e s and c is a
hexagonal pa ame e . The ypical e omagne ic pe o ski e pa ame e s o BFO ma e ial
s and wi hin a = b = (5.7–6.7) Å [7,8] and hexagonal c = (13–14) Å [5,9]. The angle α is
a ound 60 deg ees [10]. The space g oup o ien a ion is R3c. The pa ame e s o he cubic
hombohed al s uc u e a e a = b = c ~4 Å and angle α s ays oughly unde 90 deg ees.
Figu e 1. Rhombohed al c ys allog aphic s uc u e.
R3c space o ien a ion s ands o hombohed al symme y g oup, whe e he di ec ion
o one symme y is c, and he o he di ec ion o symme y being pe pendicula o c. Rhom-
bohed al o de is ep esen ed by wo symme y di ec ions, which a e c and b. The coo -
dina e sys em o he hombohed al g oup co esponds o [9] wi h la ice pa ame e s a =
b= c and α ≠ 90°.
The ypical Pe o ski e s uc u e (Figu e 2) includes an FeO uni which is inse ed in o
he Bi cubic hombohed al c ys al s uc u e. Oxygen anions and Fe ca ions c ea e oc ahe-
d al o ien a ion closed by Bi ions.
Figu e 2. Bismu h e i e uni in he pe o ski e s uc u e [8].
One o he mos signi ican disad an ages which limi s usabili y o BFO [6] is high
pa asi ic cu en (low elec ical esis ance). High pa asi ic cu en acc ues in he BFO com-
posi e due o de ec s ela ed o he seconda y phase o BFO such as absence o Bi o oxygen
a oms du ing he p epa a ion p ocess. The e a e many easons which cause high pa asi ic
cu en ; howe e , he p ima y cause is a high amoun o impu i ies du ing he deposi ion
p ocess, and he chemis y o he BFO uni . One po en ial de ec is ela ed o he e apo a-
ion o bismu h du ing he p epa a ion p ocess, hus changing he chemical alence o Fe+2
o Fe+3 [11,12] ions due o he e apo a ed Bi+2 [11,12] ca ions and oxygen acancies. Un-
compensa ed acancies lead o a dis ibu ion o spin momen o he en i e cell uni .
The absence o oxygen anions o compensa e he cha ge o lowe chemical alency o
Fe+2 causes a signi ican dec ease o elec ical esis ance, and hus an inc easing leakage
cu en .
The pa asi ic cu en becomes mo e p ominen in mul i–phase composi es (Bi2Fe4O9,
BiFeO3 e c.), hus i is becoming mo e popula o ind me hods o educe pa asi ic cu en .
Figu e 1. Rhombohed al c ys allog aphic s uc u e.
R3c space o ien a ion s ands o hombohed al symme y g oup, whe e he di ec ion
o one symme y is c, and he o he di ec ion o symme y being pe pendicula o c.
Rhombohed al o de is ep esen ed by wo symme y di ec ions, which a e c and b. The
coo dina e sys em o he hombohed al g oup co esponds o [
9
] wi h la ice pa ame e s
a=b=candα6=90◦.
The ypical Pe o ski e s uc u e (Figu e 2) includes an FeO uni which is inse ed
in o he Bi cubic hombohed al c ys al s uc u e. Oxygen anions and Fe ca ions c ea e
oc ahed al o ien a ion closed by Bi ions.
Ma e ials 2022, 14, x FOR PEER REVIEW 3 o 28
2.1. S uc u al Cha ac e iza ion o BFO Ma e ial
The mos common c ys alliza ion o m o Bismu h e i e ma e ial is a c ys allo-
g aphic s uc u e ep esen ed by a symme ic hombohed al (Figu e 1) [2,3,6] cen ally
o ien a ed pe o ski e [6] s uc u e whe e pa ame e s a, b a e la ice pa ame e s and c is a
hexagonal pa ame e . The ypical e omagne ic pe o ski e pa ame e s o BFO ma e ial
s and wi hin a = b = (5.7–6.7) Å [7,8] and hexagonal c = (13–14) Å [5,9]. The angle α is
a ound 60 deg ees [10]. The space g oup o ien a ion is R3c. The pa ame e s o he cubic
hombohed al s uc u e a e a = b = c ~4 Å and angle α s ays oughly unde 90 deg ees.
Figu e 1. Rhombohed al c ys allog aphic s uc u e.
R3c space o ien a ion s ands o hombohed al symme y g oup, whe e he di ec ion
o one symme y is c, and he o he di ec ion o symme y being pe pendicula o c. Rhom-
bohed al o de is ep esen ed by wo symme y di ec ions, which a e c and b. The coo -
dina e sys em o he hombohed al g oup co esponds o [9] wi h la ice pa ame e s a =
b= c and α ≠ 90°.
The ypical Pe o ski e s uc u e (Figu e 2) includes an FeO uni which is inse ed in o
he Bi cubic hombohed al c ys al s uc u e. Oxygen anions and Fe ca ions c ea e oc ahe-
d al o ien a ion closed by Bi ions.
Figu e 2. Bismu h e i e uni in he pe o ski e s uc u e [8].
One o he mos signi ican disad an ages which limi s usabili y o BFO [6] is high
pa asi ic cu en (low elec ical esis ance). High pa asi ic cu en acc ues in he BFO com-
posi e due o de ec s ela ed o he seconda y phase o BFO such as absence o Bi o oxygen
a oms du ing he p epa a ion p ocess. The e a e many easons which cause high pa asi ic
cu en ; howe e , he p ima y cause is a high amoun o impu i ies du ing he deposi ion
p ocess, and he chemis y o he BFO uni . One po en ial de ec is ela ed o he e apo a-
ion o bismu h du ing he p epa a ion p ocess, hus changing he chemical alence o Fe+2
o Fe+3 [11,12] ions due o he e apo a ed Bi+2 [11,12] ca ions and oxygen acancies. Un-
compensa ed acancies lead o a dis ibu ion o spin momen o he en i e cell uni .
The absence o oxygen anions o compensa e he cha ge o lowe chemical alency o
Fe+2 causes a signi ican dec ease o elec ical esis ance, and hus an inc easing leakage
cu en .
The pa asi ic cu en becomes mo e p ominen in mul i–phase composi es (Bi2Fe4O9,
BiFeO3 e c.), hus i is becoming mo e popula o ind me hods o educe pa asi ic cu en .
Figu e 2. Bismu h e i e uni in he pe o ski e s uc u e [8].
One o he mos signi ican disad an ages which limi s usabili y o BFO [
6
] is high
pa asi ic cu en (low elec ical esis ance). High pa asi ic cu en acc ues in he BFO
composi e due o de ec s ela ed o he seconda y phase o BFO such as absence o Bi o
oxygen a oms du ing he p epa a ion p ocess. The e a e many easons which cause high
pa asi ic cu en ; howe e , he p ima y cause is a high amoun o impu i ies du ing he
deposi ion p ocess, and he chemis y o he BFO uni . One po en ial de ec is ela ed o
he e apo a ion o bismu h du ing he p epa a ion p ocess, hus changing he chemical
alence o Fe
+2
o Fe
+3
[
11
,
12
] ions due o he e apo a ed Bi
+2
[
11
,
12
] ca ions and oxygen
acancies. Uncompensa ed acancies lead o a dis ibu ion o spin momen o he en i e
cell uni .
The absence o oxygen anions o compensa e he cha ge o lowe chemical alency
o Fe
+2
causes a signi ican dec ease o elec ical esis ance, and hus an inc easing leak-
age cu en .
The pa asi ic cu en becomes mo e p ominen in mul i–phase composi es (Bi
2
Fe
4
O
9
,
BiFeO
3
e c.), hus i is becoming mo e popula o ind me hods o educe pa asi ic cu en .
To lowe he leakage cu en , he s uc u e o he composi e has o be changed by adding a
small amoun o impu i ies [
13
]. Some pape s p o e a signi ican dec ease in leakage cu en
by implemen ing a e–ea h ma e ials [
6
] such as i anium, ch omium and manganese. The
leakage cu en [
14
,
15
] causes a huge limi a ion o implemen a ion o BFO ma e ial in o
complex senso de ices.
Ma e ials 2022,15, 8719 4 o 28
2.2. Magne ic P ope ies o BFO Ma e ial
The c ys allog aphic s uc u e o BFO [
14
] is ep esen ed by a hombohed al cen ally
o ien a ed pe o ski e s uc u e [
15
]. Oxygen anions c ea e an oc ahed al o ma ion in he
c ys al, hanks o hese bands he sys em showing a nonze o [
8
] e omagne ic esponse.
Fe oelec ic p ope ies o he ma e ial a e highly dependen on hese oxygen bands [
4
,
7
].
Bismu h a oms c ea e a cubic hombohed al s uc u e nex o oc ahed al uni s o FeO,
which is loca ed inside o hombohed al s uc u e. Spin in e ac ion o bismu h a oms and
he esul ed spin momen o he oc ahed al FeO uni leads o he o ma ion o e oelec ic
esponse. Spin momen o he Bi
+3
elec on pai (6s
2
) [
16
] sha es an elec on pai wi h
esidual momen o Fe
+3
caused by a weak magne ic esponse [
16
]—G– ype magne iza ion
o de (Figu e 3).
Ma e ials 2022, 14, x FOR PEER REVIEW 4 o 28
To lowe he leakage cu en , he s uc u e o he composi e has o be changed by adding
a small amoun o impu i ies [13]. Some pape s p o e a signi ican dec ease in leakage
cu en by implemen ing a e–ea h ma e ials [6] such as i anium, ch omium and man-
ganese. The leakage cu en [14,15] causes a huge limi a ion o implemen a ion o BFO
ma e ial in o complex senso de ices.
2.2. Magne ic P ope ies o BFO Ma e ial
The c ys allog aphic s uc u e o BFO [14] is ep esen ed by a hombohed al cen-
ally o ien a ed pe o ski e s uc u e [15]. Oxygen anions c ea e an oc ahed al o ma ion
in he c ys al, hanks o hese bands he sys em showing a nonze o [8] e omagne ic e-
sponse. Fe oelec ic p ope ies o he ma e ial a e highly dependen on hese oxygen
bands [4,7]. Bismu h a oms c ea e a cubic hombohed al s uc u e nex o oc ahed al uni s
o FeO, which is loca ed inside o hombohed al s uc u e. Spin in e ac ion o bismu h
a oms and he esul ed spin momen o he oc ahed al FeO uni leads o he o ma ion o
e oelec ic esponse. Spin momen o he Bi+3 elec on pai (6s2) [16] sha es an elec on
pai wi h esidual momen o Fe+3 caused by a weak magne ic esponse [16]—G– ype mag-
ne iza ion o de (Figu e 3).
Figu e 3. G– ype magne iza ion o de .
Magne iza ion o de cha ac e izes he o ien a ion o magne ic couples and angula
momen o a oms. In G– ype magne iza ion o de , all nea es magne ic dipoles a e o i-
en ed an ipa allelly (Figu e 3), causing an imagne ic dis ibu ion. Recen s udies show
ha magne ic p ope ies o he hombohed al s uc u e o BFO a e size-dependen (Figu e
4) [5,6]. I was p o en ha he e oelec ic could be g ea ly enhanced by changing he size
o BFO [14] pa icles. As BFO c ys als a e smalle , he magne ic esponse is s onge due
o a close and s onge in e ac ion o magne ic dipoles [5]. Fe oelec ic esponse is
s onge when he size o pa icles is smalle due o he lowe in e ac ion o Bi and Fe spin
momen s, esul ing in o e all enhanced e oelec ic esponse. C i ical hickness, in which
he an i e omagne ic esponse domina es o e e oelec ic esponse, s a s a ound 150
nm [17].
Figu e 4. Hys e esis loop o a ious pa icle sizes o BFO ma e ial.
Figu e 3. G– ype magne iza ion o de .
Magne iza ion o de cha ac e izes he o ien a ion o magne ic couples and angula
momen o a oms. In G– ype magne iza ion o de , all nea es magne ic dipoles a e o ien ed
an ipa allelly (Figu e 3), causing an imagne ic dis ibu ion. Recen s udies show ha mag-
ne ic p ope ies o he hombohed al s uc u e o BFO a e size-dependen (
Figu e 4
)
[5,6]
. I
was p o en ha he e oelec ic could be g ea ly enhanced by changing he size o BFO [
14
]
pa icles. As BFO c ys als a e smalle , he magne ic esponse is s onge due o a close and
s onge in e ac ion o magne ic dipoles [
5
]. Fe oelec ic esponse is s onge when he size
o pa icles is smalle due o he lowe in e ac ion o Bi and Fe spin momen s, esul ing in
o e all enhanced e oelec ic esponse. C i ical hickness, in which he an i e omagne ic
esponse domina es o e e oelec ic esponse, s a s a ound 150 nm [17].
Ma e ials 2022, 14, x FOR PEER REVIEW 4 o 28
To lowe he leakage cu en , he s uc u e o he composi e has o be changed by adding
a small amoun o impu i ies [13]. Some pape s p o e a signi ican dec ease in leakage
cu en by implemen ing a e–ea h ma e ials [6] such as i anium, ch omium and man-
ganese. The leakage cu en [14,15] causes a huge limi a ion o implemen a ion o BFO
ma e ial in o complex senso de ices.
2.2. Magne ic P ope ies o BFO Ma e ial
The c ys allog aphic s uc u e o BFO [14] is ep esen ed by a hombohed al cen-
ally o ien a ed pe o ski e s uc u e [15]. Oxygen anions c ea e an oc ahed al o ma ion
in he c ys al, hanks o hese bands he sys em showing a nonze o [8] e omagne ic e-
sponse. Fe oelec ic p ope ies o he ma e ial a e highly dependen on hese oxygen
bands [4,7]. Bismu h a oms c ea e a cubic hombohed al s uc u e nex o oc ahed al uni s
o FeO, which is loca ed inside o hombohed al s uc u e. Spin in e ac ion o bismu h
a oms and he esul ed spin momen o he oc ahed al FeO uni leads o he o ma ion o
e oelec ic esponse. Spin momen o he Bi+3 elec on pai (6s2) [16] sha es an elec on
pai wi h esidual momen o Fe+3 caused by a weak magne ic esponse [16]—G– ype mag-
ne iza ion o de (Figu e 3).
Figu e 3. G– ype magne iza ion o de .
Magne iza ion o de cha ac e izes he o ien a ion o magne ic couples and angula
momen o a oms. In G– ype magne iza ion o de , all nea es magne ic dipoles a e o i-
en ed an ipa allelly (Figu e 3), causing an imagne ic dis ibu ion. Recen s udies show
ha magne ic p ope ies o he hombohed al s uc u e o BFO a e size-dependen (Figu e
4) [5,6]. I was p o en ha he e oelec ic could be g ea ly enhanced by changing he size
o BFO [14] pa icles. As BFO c ys als a e smalle , he magne ic esponse is s onge due
o a close and s onge in e ac ion o magne ic dipoles [5]. Fe oelec ic esponse is
s onge when he size o pa icles is smalle due o he lowe in e ac ion o Bi and Fe spin
momen s, esul ing in o e all enhanced e oelec ic esponse. C i ical hickness, in which
he an i e omagne ic esponse domina es o e e oelec ic esponse, s a s a ound 150
nm [17].
Figu e 4. Hys e esis loop o a ious pa icle sizes o BFO ma e ial.
Figu e 4. Hys e esis loop o a ious pa icle sizes o BFO ma e ial.
The o e all magne ic spin momen o he hombohed al s uc u e is pe pendicu-
la [
7
] o i s cen al axis which leads o he exis ence o small magne iza ion abili y. The
magni ica ion is a ec ed by oxygen bands in he same way as e oelec ic p ope ies.
I is necessa y o men ion ha e omagne ic p ope ies s a o occu by he o e -
all supp ession o cycloid magne ic momen [
18
], o he wise e oelec ic and magne ic
p ope ies a e subdued. The cycloid momen can be b oken unde ce ain condi ions: by
Ma e ials 2022,15, 8719 5 o 28
implemen ing he magne ic ield, magne iza ion, chemical addi i es, and s ain in o hin
ilms o he e os uc u es he cycloid momen is supp essed, allowing e oelec ic and
magne ic p ope ies o occu [18].
The exis ence o cycloid spin momen [
18
] is gi en by lexomagne oelec ic in e ac ion.
Conside ing lexomagne oelec ic [
18
] in e ac ion, he elec ic pola iza ion is o se by
spin modula ion. I was shown ha magne ic p ope ies become negligible i he size o
nanopa icles is g ea e han 65 nanome e s [8].
Ano he signi ican ad an age o BFO is he ac ha BFO has ou s anding empe a u e
s abili y (Figu es 5and 6). The empe a u e, whe e i changes om an i e omagne ic o
pe manen magne ic ma e ial, is also known as Neel empe a u e (Figu e 6). The Neel [
7
]
empe a u e o BFO s ays a ound o 320 o 350
◦
C [
6
,
7
]. The ma e ial is capable o wi hs and-
ing a high ange o empe a u es and e ain i s magne ic p ope ies (Cu ie Tempe a u e is
850
◦
C [
6
,
19
]). Conside ing he ou s anding he mal s abili y o he ma e ial, including high
Cu ie and Neel empe a u es, he ma e ial shows li le change wi h empe a u e di e ences.
Ma e ials 2022, 14, x FOR PEER REVIEW 5 o 28
The o e all magne ic spin momen o he hombohed al s uc u e is pe pendicula
[7] o i s cen al axis which leads o he exis ence o small magne iza ion abili y. The mag-
ni ica ion is a ec ed by oxygen bands in he same way as e oelec ic p ope ies.
I is necessa y o men ion ha e omagne ic p ope ies s a o occu by he o e all
supp ession o cycloid magne ic momen [18], o he wise e oelec ic and magne ic p op-
e ies a e subdued. The cycloid momen can be b oken unde ce ain condi ions: by im-
plemen ing he magne ic ield, magne iza ion, chemical addi i es, and s ain in o hin
ilms o he e os uc u es he cycloid momen is supp essed, allowing e oelec ic and
magne ic p ope ies o occu [18].
The exis ence o cycloid spin momen [18] is gi en by lexomagne oelec ic in e ac-
ion. Conside ing lexomagne oelec ic [18] in e ac ion, he elec ic pola iza ion is o se
by spin modula ion. I was shown ha magne ic p ope ies become negligible i he size
o nanopa icles is g ea e han 65 nanome e s [8].
Ano he signi ican ad an age o BFO is he ac ha BFO has ou s anding empe a-
u e s abili y (Figu es 5 and 6). The empe a u e, whe e i changes om an i e omagne ic
o pe manen magne ic ma e ial, is also known as Neel empe a u e (Figu e 6). The Neel
[7] empe a u e o BFO s ays a ound o 320 o 350 °C [6,7]. The ma e ial is capable o wi h-
s anding a high ange o empe a u es and e ain i s magne ic p ope ies (Cu ie Tempe -
a u e is 850 °C [6,19]). Conside ing he ou s anding he mal s abili y o he ma e ial, in-
cluding high Cu ie and Neel empe a u es, he ma e ial shows li le change wi h empe -
a u e di e ences.
Figu e 5. Tempe a u e-dependen magne ic hys e esis loop o BFO ma e ial.
Figu e 6. Magne ic suscep ibili y s. empe a u e cu e.
In addi ion o e omagne ic p ope ies, BFO also shows massi e spon aneous mag-
ne iza ion [20].
I has always been a end o ind a way o enhance he magne ic and e oelec ic
p ope ies o BFO ma e ial. Since magne ic and e oelec ic p ope ies a e g ea ly a ec ed
by oxygen bands, adding addi ional FeO will g ea ly inc ease he magne ic p ope ies [6].
Figu e 5. Tempe a u e-dependen magne ic hys e esis loop o BFO ma e ial.
Ma e ials 2022, 14, x FOR PEER REVIEW 5 o 28
The o e all magne ic spin momen o he hombohed al s uc u e is pe pendicula
[7] o i s cen al axis which leads o he exis ence o small magne iza ion abili y. The mag-
ni ica ion is a ec ed by oxygen bands in he same way as e oelec ic p ope ies.
I is necessa y o men ion ha e omagne ic p ope ies s a o occu by he o e all
supp ession o cycloid magne ic momen [18], o he wise e oelec ic and magne ic p op-
e ies a e subdued. The cycloid momen can be b oken unde ce ain condi ions: by im-
plemen ing he magne ic ield, magne iza ion, chemical addi i es, and s ain in o hin
ilms o he e os uc u es he cycloid momen is supp essed, allowing e oelec ic and
magne ic p ope ies o occu [18].
The exis ence o cycloid spin momen [18] is gi en by lexomagne oelec ic in e ac-
ion. Conside ing lexomagne oelec ic [18] in e ac ion, he elec ic pola iza ion is o se
by spin modula ion. I was shown ha magne ic p ope ies become negligible i he size
o nanopa icles is g ea e han 65 nanome e s [8].
Ano he signi ican ad an age o BFO is he ac ha BFO has ou s anding empe a-
u e s abili y (Figu es 5 and 6). The empe a u e, whe e i changes om an i e omagne ic
o pe manen magne ic ma e ial, is also known as Neel empe a u e (Figu e 6). The Neel
[7] empe a u e o BFO s ays a ound o 320 o 350 °C [6,7]. The ma e ial is capable o wi h-
s anding a high ange o empe a u es and e ain i s magne ic p ope ies (Cu ie Tempe -
a u e is 850 °C [6,19]). Conside ing he ou s anding he mal s abili y o he ma e ial, in-
cluding high Cu ie and Neel empe a u es, he ma e ial shows li le change wi h empe -
a u e di e ences.
Figu e 5. Tempe a u e-dependen magne ic hys e esis loop o BFO ma e ial.
Figu e 6. Magne ic suscep ibili y s. empe a u e cu e.
In addi ion o e omagne ic p ope ies, BFO also shows massi e spon aneous mag-
ne iza ion [20].
I has always been a end o ind a way o enhance he magne ic and e oelec ic
p ope ies o BFO ma e ial. Since magne ic and e oelec ic p ope ies a e g ea ly a ec ed
by oxygen bands, adding addi ional FeO will g ea ly inc ease he magne ic p ope ies [6].
Figu e 6. Magne ic suscep ibili y s. empe a u e cu e.
In addi ion o e omagne ic p ope ies, BFO also shows massi e spon aneous magne-
iza ion [20].
I has always been a end o ind a way o enhance he magne ic and e oelec ic
p ope ies o BFO ma e ial. Since magne ic and e oelec ic p ope ies a e g ea ly a ec ed
by oxygen bands, adding addi ional FeO will g ea ly inc ease he magne ic p ope ies [6].
E en while possessing he s onges e omagne ic esponse o mul i e oic p ope ies,
he mul i e oic p ope ies o BFO ma e ial emain weak o be implemen ed in o la ge-
scale de ices. In addi ion, molecules o BFO a e exposed o agg essi e oxida ion o he
oxygen a mosphe e. I has been a ho opic o many discussions o igu e ou a po en ial
solu ion o dec ease he pa asi ic cu en and enhance he mul i e oic esponse. The weak
e oelec ic and magne ic esponse (an i e omagne ic esponse) o la ge-scale de ices has
been a signi ican d awback o he ma e ial o wide implemen a ion (Figu e 7). Howe e ,

Ma e ials 2022,15, 8719 6 o 28
in he yea 2003, Ramesh de eloped a i icial he e os uc u es wi h signi ican ly highe
mul i e oic p ope ies [21].
Ma e ials 2022, 14, x FOR PEER REVIEW 6 o 28
E en while possessing he s onges e omagne ic esponse o mul i e oic p ope -
ies, he mul i e oic p ope ies o BFO ma e ial emain weak o be implemen ed in o
la ge-scale de ices. In addi ion, molecules o BFO a e exposed o agg essi e oxida ion o
he oxygen a mosphe e. I has been a ho opic o many discussions o igu e ou a po en-
ial solu ion o dec ease he pa asi ic cu en and enhance he mul i e oic esponse. The
weak e oelec ic and magne ic esponse (an i e omagne ic esponse) o la ge-scale de-
ices has been a signi ican d awback o he ma e ial o wide implemen a ion (Figu e 7).
Howe e , in he yea 2003, Ramesh de eloped a i icial he e os uc u es wi h signi ican ly
highe mul i e oic p ope ies [21].
Figu e 7. An i e omagne ic cu e o BFO.
3. Thin Films o Bismu h Fe i e
Bismu h e i e [14] has been unde in ense s udy because o he s onges and unique
combina ion o magne ic and e oelec ic p ope ies. In addi ion o unique mul i e oic
p ope ies, BFO demons a e a pho oelec ic, weak piezoelec ic esponse and s ong die-
lec ic p ope ies, which could be enhanced by adding addi ional impu i ies o a e–ea h
ma e ials.
3.1. Mo phology and Composi ion o P oduced Thin Film
Thin ilms ha e d awn a lo o a en ion and popula i y o be implemen ed in o many
p ospe ous applica ions and complex mic oelec onic de ices [22]. Thin ilms o BFO a e
ex emely popula nowadays due o he ex eme deg ee o e sa ili y [12,23]. Design o
hin ilms [24] o e s nume ous modi ica ions o mo phology (Figu e 8b), pa icle size
(Figu e 8a) and o e all chemical compound o p oduced ilms. The e sa ili y o hin ilms
is achie ed by a ious deposi ion me hods.
Figu e 8. Mo phology o a BFO hin ilm: (A) 2 µm; (B) 1 µm [25].
Figu e 7. An i e omagne ic cu e o BFO.
3. Thin Films o Bismu h Fe i e
Bismu h e i e [
14
] has been unde in ense s udy because o he s onges and unique
combina ion o magne ic and e oelec ic p ope ies. In addi ion o unique mul i e oic
p ope ies, BFO demons a e a pho oelec ic, weak piezoelec ic esponse and s ong
dielec ic p ope ies, which could be enhanced by adding addi ional impu i ies o a e–
ea h ma e ials.
3.1. Mo phology and Composi ion o P oduced Thin Film
Thin ilms ha e d awn a lo o a en ion and popula i y o be implemen ed in o many
p ospe ous applica ions and complex mic oelec onic de ices [
22
]. Thin ilms o BFO a e
ex emely popula nowadays due o he ex eme deg ee o e sa ili y [
12
,
23
]. Design o
hin ilms [
24
] o e s nume ous modi ica ions o mo phology (Figu e 8B), pa icle size
(Figu e 8A) and o e all chemical compound o p oduced ilms. The e sa ili y o hin ilms
is achie ed by a ious deposi ion me hods.
Ma e ials 2022, 14, x FOR PEER REVIEW 6 o 28
E en while possessing he s onges e omagne ic esponse o mul i e oic p ope -
ies, he mul i e oic p ope ies o BFO ma e ial emain weak o be implemen ed in o
la ge-scale de ices. In addi ion, molecules o BFO a e exposed o agg essi e oxida ion o
he oxygen a mosphe e. I has been a ho opic o many discussions o igu e ou a po en-
ial solu ion o dec ease he pa asi ic cu en and enhance he mul i e oic esponse. The
weak e oelec ic and magne ic esponse (an i e omagne ic esponse) o la ge-scale de-
ices has been a signi ican d awback o he ma e ial o wide implemen a ion (Figu e 7).
Howe e , in he yea 2003, Ramesh de eloped a i icial he e os uc u es wi h signi ican ly
highe mul i e oic p ope ies [21].
Figu e 7. An i e omagne ic cu e o BFO.
3. Thin Films o Bismu h Fe i e
Bismu h e i e [14] has been unde in ense s udy because o he s onges and unique
combina ion o magne ic and e oelec ic p ope ies. In addi ion o unique mul i e oic
p ope ies, BFO demons a e a pho oelec ic, weak piezoelec ic esponse and s ong die-
lec ic p ope ies, which could be enhanced by adding addi ional impu i ies o a e–ea h
ma e ials.
3.1. Mo phology and Composi ion o P oduced Thin Film
Thin ilms ha e d awn a lo o a en ion and popula i y o be implemen ed in o many
p ospe ous applica ions and complex mic oelec onic de ices [22]. Thin ilms o BFO a e
ex emely popula nowadays due o he ex eme deg ee o e sa ili y [12,23]. Design o
hin ilms [24] o e s nume ous modi ica ions o mo phology (Figu e 8b), pa icle size
(Figu e 8a) and o e all chemical compound o p oduced ilms. The e sa ili y o hin ilms
is achie ed by a ious deposi ion me hods.
Figu e 8. Mo phology o a BFO hin ilm: (A) 2 µm; (B) 1 µm [25].
Figu e 8. Mo phology o a BFO hin ilm: (A) 2 µm; (B) 1 µm [25].
BFO hin ilms demons a e di e en c ys allog aphic o ien a ions based on a ion o
la ice pa ame e s wi h a ious o ien a ion, wi h a ion angles being 71
◦
, 109
◦
and 180
◦
,
he ope a ion empe a u e du ing he deposi ion p ocess and subs a e mo phology. Thin
ilm can be syn hesized in o hombohed al, elaxed hombohed al (bulk), e agonal and
s ained e agonal phases. The e is a sligh change in he c ys allog aphic s uc u e o
subs a e s uc u e o bulk phase wi h inc easing ilm hickness caused by s ain elaxa ion.
This change e ec s he symme y o he esul ed BFO ilm [26].
As was men ioned p e iously, o enhance he pe o mance o BFO ma e ial, i is
necessa y o supp ess cycloid momen . Acco ding o undamen al s udies [
27
,
28
] hin ilms
Ma e ials 2022,15, 8719 7 o 28
wi h pa icles smalle han 62 nm ha e a signi ican inc ease in e omagne ic esponse.
Inc eased pe o mance o BFO hin ilms can be desc ibed as ollows: pa icle size s ays
wi hin he ange o 62 nm leads o he modula ion o spi al spin momen s esul ing in
g ea e enhancemen o e omagne ic p ope ies [
27
]. Wi h e en smalle pa icle size, BFO
ma e ial demons a es a negligible e omagne ic esponse due o insu icien compensa ion
o spin momen s. Uncompensa ed momen s esul in a change o bond angle and bond
leng h o e agonal and dec ease o il o oc ahed al FeO uni s. Co esponding o he i s
p incipal calcula ion, he e agonal bond angle is c ucial o he ans o ma ion be ween
e omagne ic and an i e omagne ic phases. The change o bond aFngle sugges s he e is a
hickness dependence o hin ilms simila o bulk.
The easies and comp ehensible way o o se spi al spin momen is by s aining
BFO ma e ial in o hin ilms (Figu e 9). I has been ound, ha unde op imal s ain
coe icien (a ound 4.05%) [
28
] (Figu e 10) p oduced BFO ilms [
28
] unde go symme ical
ans o ma ion which co esponds wi h a change o la ice pa ame e s a io.
Ma e ials 2022, 14, x FOR PEER REVIEW 7 o 28
BFO hin ilms demons a e di e en c ys allog aphic o ien a ions based on a ion o
la ice pa ame e s wi h a ious o ien a ion, wi h a ion angles being 71°, 109° and 180°,
he ope a ion empe a u e du ing he deposi ion p ocess and subs a e mo phology. Thin
ilm can be syn hesized in o hombohed al, elaxed hombohed al (bulk), e agonal and
s ained e agonal phases. The e is a sligh change in he c ys allog aphic s uc u e o
subs a e s uc u e o bulk phase wi h inc easing ilm hickness caused by s ain elaxa-
ion. This change e ec s he symme y o he esul ed BFO ilm [26].
As was men ioned p e iously, o enhance he pe o mance o BFO ma e ial, i is nec-
essa y o supp ess cycloid momen . Acco ding o undamen al s udies [27,28] hin ilms
wi h pa icles smalle han 62 nm ha e a signi ican inc ease in e omagne ic esponse.
Inc eased pe o mance o BFO hin ilms can be desc ibed as ollows: pa icle size s ays
wi hin he ange o 62 nm leads o he modula ion o spi al spin momen s esul ing in
g ea e enhancemen o e omagne ic p ope ies [27]. Wi h e en smalle pa icle size,
BFO ma e ial demons a es a negligible e omagne ic esponse due o insu icien com-
pensa ion o spin momen s. Uncompensa ed momen s esul in a change o bond angle
and bond leng h o e agonal and dec ease o il o oc ahed al FeO uni s. Co esponding
o he i s p incipal calcula ion, he e agonal bond angle is c ucial o he ans o ma ion
be ween e omagne ic and an i e omagne ic phases. The change o bond aFngle sug-
ges s he e is a hickness dependence o hin ilms simila o bulk.
The easies and comp ehensible way o o se spi al spin momen is by s aining BFO
ma e ial in o hin ilms (Figu e 9). I has been ound, ha unde op imal s ain coe icien
(a ound 4.05%) [28] (Figu e 10) p oduced BFO ilms [28] unde go symme ical ans o -
ma ion which co esponds wi h a change o la ice pa ame e s a io.
Figu e 9. BFO sample su ace.
The e is a de ini i e change in loca ion o ions in he hombohed al c ys al s uc u e
(Fe+3 oc ahed al uni s) compa ed o s uc u e wi h Fe+5 ca ions, sugges ing he phase sep-
a a ion in o e agonal and dis o ed phase o he igonal symme y g oup (R3c). Wi h
inc easing s ain, coe icien ilms demons a e me as able R3c–like phase wi h minimal
pe o mance enhancemen and phase sepa a ion [29]. Summa iza ion o hickness de-
pendence o BFO ilms on s ain coe icien is shown in Figu e 10 [28].
Figu e 9. BFO sample su ace.
Ma e ials 2022, 14, x FOR PEER REVIEW 8 o 28
Figu e 10. S ain coe icien dependence on hickness [28].
I was shown ha he emanen pola iza ion o p oduced ilms inc eases wi h e e y
laye o deposi ed BFO ma e ial, c ea ing a complex mul ilaye he e os uc u e (Figu e
11). P e e ed o ien a ion o deposi ed mul ilaye s is 110. Imp o emen o he emanen
pola iza ion alue is desc ibed by he lowe pa asi ic cu en o he mul ilaye sys em,
in e laye s ain and inc eased coupling be ween deposi ed laye s, esul ing in he in-
c ease o dis o ion in he BFO pe o ski e uni .
Figu e 11. Mul i–laye he e os uc u e o BFO BTO ma e ials.
Typical BFO hin ilms (Figu e 12) can be p oduced wi hin a wide ange o hick-
nesses. The mos common and widely sp ead ange o p oduced BFO ilms s ays wi hin
50 o 500 nm [28].
Figu e 12. Pu e BFO ilm su ace mo phology [30].
3.2. Pho oelec ical P ope ies
In addi ion o a unique combina ion o e oelec ic and magne ic p ope ies, i is
necessa y o men ion ha BFO-based hin ilms exhibi s ong pho oelec ic p ope ies.
Conside ing he smalle op ical bandgap (~2.5–2.7 eV) in compa ison o o he e oelec ic
ma e ial (Pb(Z ,Ti)O3, LiNbO3, BaTiO3) and wide ange o isible ligh abso p ion, BFO
Figu e 10. S ain coe icien dependence on hickness [28].
The e is a de ini i e change in loca ion o ions in he hombohed al c ys al s uc u e
(Fe
+3
oc ahed al uni s) compa ed o s uc u e wi h Fe
+5
ca ions, sugges ing he phase
sepa a ion in o e agonal and dis o ed phase o he igonal symme y g oup (R3c). Wi h
inc easing s ain, coe icien ilms demons a e me as able R3c–like phase wi h minimal pe -
o mance enhancemen and phase sepa a ion [
29
]. Summa iza ion o hickness dependence
o BFO ilms on s ain coe icien is shown in Figu e 10 [28].
I was shown ha he emanen pola iza ion o p oduced ilms inc eases wi h e e y
laye o deposi ed BFO ma e ial, c ea ing a complex mul ilaye he e os uc u e (Figu e 11).
P e e ed o ien a ion o deposi ed mul ilaye s is 110. Imp o emen o he emanen pola -
iza ion alue is desc ibed by he lowe pa asi ic cu en o he mul ilaye sys em, in e laye
Ma e ials 2022,15, 8719 8 o 28
s ain and inc eased coupling be ween deposi ed laye s, esul ing in he inc ease o dis o -
ion in he BFO pe o ski e uni .
Ma e ials 2022, 14, x FOR PEER REVIEW 8 o 28
Figu e 10. S ain coe icien dependence on hickness [28].
I was shown ha he emanen pola iza ion o p oduced ilms inc eases wi h e e y
laye o deposi ed BFO ma e ial, c ea ing a complex mul ilaye he e os uc u e (Figu e
11). P e e ed o ien a ion o deposi ed mul ilaye s is 110. Imp o emen o he emanen
pola iza ion alue is desc ibed by he lowe pa asi ic cu en o he mul ilaye sys em,
in e laye s ain and inc eased coupling be ween deposi ed laye s, esul ing in he in-
c ease o dis o ion in he BFO pe o ski e uni .
Figu e 11. Mul i–laye he e os uc u e o BFO BTO ma e ials.
Typical BFO hin ilms (Figu e 12) can be p oduced wi hin a wide ange o hick-
nesses. The mos common and widely sp ead ange o p oduced BFO ilms s ays wi hin
50 o 500 nm [28].
Figu e 12. Pu e BFO ilm su ace mo phology [30].
3.2. Pho oelec ical P ope ies
In addi ion o a unique combina ion o e oelec ic and magne ic p ope ies, i is
necessa y o men ion ha BFO-based hin ilms exhibi s ong pho oelec ic p ope ies.
Conside ing he smalle op ical bandgap (~2.5–2.7 eV) in compa ison o o he e oelec ic
ma e ial (Pb(Z ,Ti)O3, LiNbO3, BaTiO3) and wide ange o isible ligh abso p ion, BFO
Figu e 11. Mul i–laye he e os uc u e o BFO BTO ma e ials.
Typical BFO hin ilms (Figu e 12) can be p oduced wi hin a wide ange o hicknesses.
The mos common and widely sp ead ange o p oduced BFO ilms s ays wi hin 50 o
500 nm [28].
Ma e ials 2022, 14, x FOR PEER REVIEW 8 o 28
Figu e 10. S ain coe icien dependence on hickness [28].
I was shown ha he emanen pola iza ion o p oduced ilms inc eases wi h e e y
laye o deposi ed BFO ma e ial, c ea ing a complex mul ilaye he e os uc u e (Figu e
11). P e e ed o ien a ion o deposi ed mul ilaye s is 110. Imp o emen o he emanen
pola iza ion alue is desc ibed by he lowe pa asi ic cu en o he mul ilaye sys em,
in e laye s ain and inc eased coupling be ween deposi ed laye s, esul ing in he in-
c ease o dis o ion in he BFO pe o ski e uni .
Figu e 11. Mul i–laye he e os uc u e o BFO BTO ma e ials.
Typical BFO hin ilms (Figu e 12) can be p oduced wi hin a wide ange o hick-
nesses. The mos common and widely sp ead ange o p oduced BFO ilms s ays wi hin
50 o 500 nm [28].
Figu e 12. Pu e BFO ilm su ace mo phology [30].
3.2. Pho oelec ical P ope ies
In addi ion o a unique combina ion o e oelec ic and magne ic p ope ies, i is
necessa y o men ion ha BFO-based hin ilms exhibi s ong pho oelec ic p ope ies.
Conside ing he smalle op ical bandgap (~2.5–2.7 eV) in compa ison o o he e oelec ic
ma e ial (Pb(Z ,Ti)O3, LiNbO3, BaTiO3) and wide ange o isible ligh abso p ion, BFO
Figu e 12. Pu e BFO ilm su ace mo phology [30].
3.2. Pho oelec ical P ope ies
In addi ion o a unique combina ion o e oelec ic and magne ic p ope ies, i is
necessa y o men ion ha BFO-based hin ilms exhibi s ong pho oelec ic p ope ies.
Conside ing he smalle op ical bandgap (~2.5–2.7 eV) in compa ison o o he e oelec ic
ma e ial (Pb(Z ,Ti)O
3
, LiNbO
3
, BaTiO
3
) and wide ange o isible ligh abso p ion, BFO
ma e ial a ac s inc eased a en ion o po en ial pho o ol aic and/o pho ogal anic ap-
plica ions [
31
]. The pho o ol aic phenomenon has been encoun e ed in di e en o ms
o BFO ma e ial: c ys al s uc u e, ilms and BFO added ce amics. All o ms abo e o
he ma e ial hin ilms a e ex emely use ul o be implemen ed in o small- and la ge-scale
de ices, since i is uncomplica ed o ob ain signal om BFO ilms. Pho o ol aic p ope ies
o BFO hin ilms we e success ully implemen ed in o a ious de ices, o example, plana
pho ode ec o s [
32
], and complex senso s. Ne e heless, implemen a ion in o la ge-scale
de ices emains limi ed conside ing cons ained pe o mance o he ma e ial. Howe e ,
he pho o ol aic phenomenon is a ec ed by a a ie y o ac o s. A po en ial a ibu e o
pho oelec ic p ope ies is pho ocu en in ensi y, which is ela ed o quali y o p oduced
BFO ilms. Wi h smoo he and mo e homogeneous ilms he e is an inc ease o in e nal e-
combina ion o gene a ed elec on–hole pai s. The inc ease o ecombina ion a e (inc ease
o li e ime) [
33
] is caused by a dec ease o in e molecula (mig a ion) dis ance wi hin he
su ace o p oduced ilm, which, in i s own e ms, leads o a po en ial dec ease o cu en
in ensi y (inc ease o pho oconduc i i y). Some s udies p opose ha he pho o ol aic
esponse is a ec ed by ex e nal elec ic ield (pola iza ion) [
34
]. Di ec ion o pho o ol aic
esponse o p oduced ilms has been a ec ed by applied elec ical ield in di e en di-
Ma e ials 2022,15, 8719 9 o 28
ec ions [
34
,
35
]. As shown by Choi and his eam, pho o ol aic esponse in single c ys al
BFO ilms demons a e nonlinea beha io and he di ec ion o pho o ol aic esponse can
be changed by applied ol age. Fu he mo e, simila obse a ions o he dependance o
pho ocu en and elec ic ield has been pe o med by Yi [
36
]. In addi ion o he obse a ion,
he heo y o he e ec o he domain [
37
] wall angle on pho o ol aic esponse has been
p oposed. Acco ding o he heo y, domain walls, which sepa a e holes and elec ons, a e
es ima ed o be abou 100 nm, which is conside ably smalle in compa ison o con en ional
silicon semiconduc o s [38].
As con i med and obse ed by Choi [
35
] and Yang [
39
] on pu e BFO ma e ial wi h
pe iodical domain walls [
36
], pho o ol age la gely inc eases he bandgap o he BFO
ma e ial [
39
]. Yang has p o en ha he s onges pho o ol aic esponse was ob ained a he
71
◦
domain wall [
34
]. Ji and his eam ha e shown ha he bulk pho o ol aic e ec is i al
o he de e mina ion o pho o ol aic esponse o BFO ilms (Figu e 13) [
40
]. Fu he mo e,
he pho oelec ic esponse is dependen on he s uc u e o p oduced ilm. S ain o BFO
ilm could po en ially p o ide enhanced pho oconduc i i y and con ol o e pho o ol aic
e ec o he inal ilm. Fo example, s ained BFO ma e ial on LAO [
41
] exhibi s enhanced
pho oconduc i i y [42].
Ma e ials 2022, 14, x FOR PEER REVIEW 9 o 28
ma e ial a ac s inc eased a en ion o po en ial pho o ol aic and/o pho ogal anic ap-
plica ions [31]. The pho o ol aic phenomenon has been encoun e ed in di e en o ms o
BFO ma e ial: c ys al s uc u e, ilms and BFO added ce amics. All o ms abo e o he
ma e ial hin ilms a e ex emely use ul o be implemen ed in o small- and la ge-scale
de ices, since i is uncomplica ed o ob ain signal om BFO ilms. Pho o ol aic p ope ies
o BFO hin ilms we e success ully implemen ed in o a ious de ices, o example, plana
pho ode ec o s [32], and complex senso s. Ne e heless, implemen a ion in o la ge-scale
de ices emains limi ed conside ing cons ained pe o mance o he ma e ial. Howe e ,
he pho o ol aic phenomenon is a ec ed by a a ie y o ac o s. A po en ial a ibu e o
pho oelec ic p ope ies is pho ocu en in ensi y, which is ela ed o quali y o p oduced
BFO ilms. Wi h smoo he and mo e homogeneous ilms he e is an inc ease o in e nal
ecombina ion o gene a ed elec on–hole pai s. The inc ease o ecombina ion a e (in-
c ease o li e ime) [33] is caused by a dec ease o in e molecula (mig a ion) dis ance
wi hin he su ace o p oduced ilm, which, in i s own e ms, leads o a po en ial dec ease
o cu en in ensi y (inc ease o pho oconduc i i y). Some s udies p opose ha he pho o-
ol aic esponse is a ec ed by ex e nal elec ic ield (pola iza ion) [34]. Di ec ion o pho-
o ol aic esponse o p oduced ilms has been a ec ed by applied elec ical ield in di e -
en di ec ions [34,35]. As shown by Choi and his eam, pho o ol aic esponse in single
c ys al BFO ilms demons a e nonlinea beha io and he di ec ion o pho o ol aic e-
sponse can be changed by applied ol age. Fu he mo e, simila obse a ions o he de-
pendance o pho ocu en and elec ic ield has been pe o med by Yi [36]. In addi ion o
he obse a ion, he heo y o he e ec o he domain [37] wall angle on pho o ol aic
esponse has been p oposed. Acco ding o he heo y, domain walls, which sepa a e holes
and elec ons, a e es ima ed o be abou 100 nm, which is conside ably smalle in compa -
ison o con en ional silicon semiconduc o s [38].
As con i med and obse ed by Choi [35] and Yang [39] on pu e BFO ma e ial wi h
pe iodical domain walls [36], pho o ol age la gely inc eases he bandgap o he BFO ma-
e ial [39]. Yang has p o en ha he s onges pho o ol aic esponse was ob ained a he
71° domain wall [34]. Ji and his eam ha e shown ha he bulk pho o ol aic e ec is i al
o he de e mina ion o pho o ol aic esponse o BFO ilms (Figu e 13) [40]. Fu he mo e,
he pho oelec ic esponse is dependen on he s uc u e o p oduced ilm. S ain o BFO
ilm could po en ially p o ide enhanced pho oconduc i i y and con ol o e pho o ol aic
e ec o he inal ilm. Fo example, s ained BFO ma e ial on LAO [41] exhibi s enhanced
pho oconduc i i y [42].
Figu e 13. Sample o deposi ed BFO ma e ial.
Thin ilms o BFO ma e ial show an abso p ion a e o he wide isible ligh ange o
350 and 575 nm (Figu e 14). The wide isible ligh spec um means he ma e ial can abso b
huge amoun o ligh ene gy [43].
Figu e 13. Sample o deposi ed BFO ma e ial.
Thin ilms o BFO ma e ial show an abso p ion a e o he wide isible ligh ange o
350 and 575 nm (Figu e 14). The wide isible ligh spec um means he ma e ial can abso b
huge amoun o ligh ene gy [43].
Ma e ials 2022, 14, x FOR PEER REVIEW 10 o 28
Figu e 14. Abso p ion a e o isible ligh wa eleng h o BFO ma e ial.
Thin ilms o BFO ma e ial ha e become mo e popula o po en ial pho o ol aic ap-
plica ions due o he exis ence o anomalously la ge pho o ol age, which o e comes he
low bandgap o BFO ma e ial (~2.7 eV). Wi h he combina ion o pho ogal anic e ec ,
o e all chemical s abili y makes BFO wo hy o implemen a ion in o pho oelec ic and
pho oca aly ic de ices.
4. Deposi ion Me hods o BFO Thin Films
BFO is a unique ma e ial which shows e oelec ic and magne ic p ope ies a same
ime. Howe e , due o he cycloid momen o he cell uni , i is necessa y o o se cycloid
spin momen o ob ain he s onges e oelec ic esponse. One way o o se cycloid mo-
men is s aining ma e ial in o hin [25] ilms. I was a c ucial poin o discussion o ind
he mos cos –e ec i e and sui able me hod o p oducing he e os uc u es based on hin
ilms o BFO ma e ial wi h minimum po en ial de ec s.
The mos cos –e ec i e me hod o enhancing o e all p ope ies o p oduced ilms is
he implemen a ion o impu i ies. I was shown ha a e–ea h ma e ials d ama ically de-
c ease he pa asi ic cu en o BFO ilms because o he compensa ion o e apo a ed Bi
a oms and oxygen acancies due o changed o e all spin momen o a cell uni . E apo a-
ion o Bi a oms and oxygen acancies is an una oidable side e ec o p oduc ion o BFO
ilms. The mos p omising ma e ials o enhance mul i e oic p ope ies and dec ease pa -
asi ic cu en a e Mn [44] and Ni [45] due o simila a omic adius o Fe ca ions and chem-
ical alence s abili y (Table 1).
Table 1. Compa ison able o magne ic pa ame e s o pu e and doped by Mn BFO ma e ial.
Ma e ial
Coe ci i y (Oe)
Magne iza ion (emu)
Re en i i y(emu)
BFO
~70
~0.08
~920µ
BMnFO–0.1
~280
~0.12
~5.5 m
BMnFO–0.2
~130
~0.17
~3 m
These dopan s aim o subs i u e ca ions o Fe+2 o compensa e esidual spin momen ,
hus lowe ing he an i e omagne ic esponse o cell uni . Typical magne ic loop is ep e-
sen ed in Figu e 15. Recen epo s clam he implemen a ion o a e–ea h ma e ials lowe
cell alue, hus c ea ing compac su ace mo phology esul ing in a signi ican dec ease
in cu en densi y.
Figu e 14. Abso p ion a e o isible ligh wa eleng h o BFO ma e ial.
Thin ilms o BFO ma e ial ha e become mo e popula o po en ial pho o ol aic
applica ions due o he exis ence o anomalously la ge pho o ol age, which o e comes
he low bandgap o BFO ma e ial (~2.7 eV). Wi h he combina ion o pho ogal anic e ec ,
Ma e ials 2022,15, 8719 16 o 28
subs a e su ace. The e sa ili y o he ope a ion p ocess allows changing a ge ed ma e ial
sequen ially on a o a able holde which is a key ad an age o he p ocess. Sequen ial
change o a ge ed ma e ial is necessa y o p oduce mul i–laye complex s uc u es and he
de elopmen o new a i icial s uc u es o s able/me as able ma e ials wi hou in lic ing
agg essi e ope a ion condi ions by changing lase pa ame e s. An example o he mul i–
laye s uc u e o BFO ma e ial is ep esen ed in Figu e 22a,b.
Ma e ials 2022, 14, x FOR PEER REVIEW 16 o 28
Scandium Oxide (DyScO3), and S on ium i ana e (S TiO3, STO subs a e). Typical ope -
a ional pa ame e s o he PLD me hod include epe i ion a e, deposi ion ime, subs a e
p ehea empe a u e, lase pulses and main chambe p essu e. The o ien a ion o sub-
s a e will be a decisi e ac o o he esul ed BFO c ys al o ien a ion. Since he subs a e
is a ge ed by a lase , he c ys alliza ion o BFO is s a ed by c ea ing a c ys al ma ix o
Bi2O3 and Fe2O3 ma e ials wi h a di e en o ien a ion. The pulse a e epe i ion s ays
a ound 5–15 Hz [61,62] and may a y based on he ecipe. The wa eleng h o lase adia-
ion usually co esponds o a deep ul a iole colo (200–400 nm), which is he mos used
lase adia ion. To achie e maximum ene gy dis ibu ion on he a ge ed ma e ial he in-
cidence angle should s ay a ound 45° [66]. The en i e p ocess is accompanied by acuum
and/o he p esence o an ine gas o educe po en ial impu i ies. The du a ion o he
deposi ion p ocess is based on he hickness o p oduced ilm and pulses o he lase . The
ypical du a ion o he deposi ion cycle o 100nm ilm wi h 5000 pulses s ays wi hin 20
min. The deposi ion empe a u e o BFO ilms (subs a e) s ays unde 500 °C
Figu e 21. C ys allog aphy o p oduced c ys als based on he o ien a ion o subs a e.
PLD has conside able ad an ages compa ed o he con en ional echniques o he
p epa a ion o hin ilm ma e ials based on BFO ma e ial.
The majo supe io i y o PLD [64] is s oichiome y o p oduced ilms. S oichiome y
is caused by a high condensa ion a e o e apo a ed pa icles o a ge ed ma e ial on he
subs a e su ace. The e sa ili y o he ope a ion p ocess allows changing a ge ed ma e-
ial sequen ially on a o a able holde which is a key ad an age o he p ocess. Sequen ial
change o a ge ed ma e ial is necessa y o p oduce mul i–laye complex s uc u es and
he de elopmen o new a i icial s uc u es o s able/me as able ma e ials wi hou in lic -
ing agg essi e ope a ion condi ions by changing lase pa ame e s. An example o he
mul i–laye s uc u e o BFO ma e ial is ep esen ed in Figu e 22a,b.
Figu e 22. SEM image o a BFO ilm: (a) opog aphy; (b) c oss–sec ion [67].
The ope a ional pa ame e s o PLD, such as lase op ical ene gy [64,67] dis ibu ion,
he dis ance be ween a ge and subs a e, he subs a e empe a u e and g ow a e
g ea ly cons ain he nega i e e ec o mo phology and enhance magne ic and elec ical
p ope ies o he esul ed hin ilm s uc u es.
In compa ison o cos ly, con en ional me hods (selec i e ion implemen a ion) which
ope a e in a highe empe a u e ange, hus p oducing a ious ypes o de ec s and im-
pu i ies o deposi ed composi e, he PLD [64,67] me hod ope a es in a lowe empe a u e
ange.
Figu e 22. SEM image o a BFO ilm: (a) opog aphy; (b) c oss–sec ion [67].
The ope a ional pa ame e s o PLD, such as lase op ical ene gy [
64
,
67
] dis ibu ion,
he dis ance be ween a ge and subs a e, he subs a e empe a u e and g ow a e g ea ly
cons ain he nega i e e ec o mo phology and enhance magne ic and elec ical p ope ies
o he esul ed hin ilm s uc u es.
In compa ison o cos ly, con en ional me hods (selec i e ion implemen a ion) which
ope a e in a highe empe a u e ange, hus p oducing a ious ypes o de ec s and impu i-
ies o deposi ed composi e, he PLD [
64
,
67
] me hod ope a es in a lowe empe a u e ange.
The p ice o used subs a e is ano he disad an age o con en ional me hods. Consid-
e ing ha he PLD can ope a e in a lowe ange o empe a u es, he PLD me hod ope a es
wi h mo e a ailable and cheape polyme base subs a es [67].
I has been epo ed ha ilms p oduced by he PLD me hod show ela i ely low
pa asi ic cu en , conside ing he low amoun o c ys allog aphic de ec s and small pa icles
size [68].
4.4. Compa ison o ALD, PLD and Sol Gel Me hods
By compa ing he mos widesp ead me hods o he syn hesis BFO hin ilms, he sol
gel me hod was p o en o be he mos popula me hod o he p epa a ion o ilms in
huge quan i ies. In compa ison o PLD and ALD, he sol gel me hod (Table 2) is ela i ely
inexpensi e since i does no u ilize a acuum no ine gases du ing he p epa a ion
p ocedu e. The majo downside o he sol gel me hod is a signi ican ly high de ec a e
o he c ys allog aphic and mo phological s uc u e o p oduced ilms. The quali y o
p oduced ilms is based on pu i y o used chemical ing edien s such as wa e –soluble sal s
and chemical sol en s. The p esence o an oxygen a mosphe e has a nega i e e ec on he
p ope ies o BFO ilms due o occu ing oxide side p oduc s. Thin ilms p oduced by he
sol gel me hod exhibi a high pa asi ic cu en , which is gi en by he con amina ed su ace
due o he p esence o oxygen a mosphe e and impu i ies o chemical compounds. In
addi ion, ilms demons a e a negligible e oelec ic esponse gi en by inc eased pa icle
size. The sol gel me hod would be ex emely use ul o he p epa a ion o ilms o
applica ions whe e quali y o mo phology and p ope ies a e ole able such as ange
scale senso de ices. The sol gel me hod does no show e sa ili y o p oducing complex
he e os uc u es o BFO ma e ial, and ins ead allows o he p epa a ion o “sandwich”
s uc u es wi h di e en monolaye s.

Ma e ials 2022,15, 8719 17 o 28
Table 2. Compa ison able o deposi ion me hods.
Syn hesis Me hod Mo phology Thickness Cos Quali y
PLD Thin ilms, mic o/nano c ys als,
he e os uc u es. 1 nm–>1 µm High High
ALD Thin ilms, single laye deposi ion.
mic o/nano c ys als, he e os uc u es.
1 nm–>1 µm High High
Sol gel me hod Thin ilms 100 nm–>1 µm Low–medium Low
The ope a ion p inciples o PLD and ALD me hods sha e many simila i ies. Bo h
me hods use an ex e nal hea sou ce o e apo a e a small amoun o a ge ed ma e ial.
The e apo a ed ma e ial will condensa e on a coole subs a e su ace, c ea ing he de-
manded o ien a ion o hin ilm. Bo h me hods show a high deg ee o quali y o p oduced
ilms by ope a ing wi h he p esence o a acuum and ine gases o u he dec ease he
con amina ion a e and impu i ies o p oduced ilms. The me hods do no in ol e he
ope a ion wi h p esence o agg essi e chemical sol en s, which could ha e a nega i e e ec
on p oduced ilms. One majo ad an age o bo h me hods is hei ope a ion wi hin a low
empe a u e ange (<350–400
◦
C), in compa ison o he sol gel me hod (400–700
◦
C). The
p oduced hin ilms by PLD and ALD me hods show conside ably lowe pa asi ic cu en
and a high deg ee o s oichiome y. The key ad an age o bo h me hods is he e ec i e
deposi ion o complex he e os uc u es wi h di e en c ys allog aphic o ien a ion wi h
di e en ma e ial monolaye s. Bo h me hods o e a wide ange o hicknesses o p oduced
ilms. The hickness o he inal p oduc a ies om se e al angs oms o hund eds o
nanome e s whe e minimal hickness o p oduced ilms by he sol gel me hod is 100 nm
and maximum may inc ease se e al
µ
m. The e sa ili y and high quali y o p oduced ilms
comes wi h inc eased coas s o bo h me hods, which is a signi ican disad an age o hese
me hods. The high cos o bo h me hods is gi en by he u iliza ion o lase echnologies,
acuum and ine gases, expensi e ma e ials, and equipmen . Bo h me hods a e sui able
he p epa a ion o hin ilms in small quan i ies wi h supe io p ope ies and mo phology
o p ecise measu emen de ices o p o o ypes.
5. Side Phases o Bismu h Fe i e
The need o cos –e ec i e ene gy sou ces in ol e seeking new and p ospec i e ma-
e ials and echnologies. Conside ing e e inc easing pollu ion and apid de elopmen
o he manu ac u ing indus y, he use o sola ene gy has become an undi ided pa
o he mode n end o u iliza ion o eco– iendly ene gy sou ces. Nowadays ends o
designing mic oelec onic de ises o e new challenges, in ol ing he design o mic o-
elec onic de ices which would be based on manipula ion by elec ic and magne ic pa s.
These challenges equi e in es iga ion and ecache o new ma e ials. Among all ma e ials,
mul i e oics and especially Bismu h e i e, s ands ou . The BFO ma e ial aims o be a
po en ial solu ion ega ding simul aneous con ol o magne ic and elec ic pa s, since BFO
exhibi s he s onges e oelec ic and magne ic esponse a oom empe a u e.
5.1. Bismu h Mulli e Ma e ial
Du ing in ensi e s udying o Bismu h e i e ma e ial p epa a ion me hods, i was
ound ha du ing he ini ial p epa a ion p ocess o BFO powde s, alongside pu e BFO
ma e ial, o he side–phase ma e ials we e syn hesized. I was shown, due o he agg essi e
chemical na u e [
4
] o bismu h, ha BFO causes byp oduc s. These ma e ials ha e been
ca ego ized as impu i ies o he BFO ma e ial. The wo mos popula byp oduc s o
syn hesis o pu e BFO ma e ial a e bismu h Mulli e and I on Seleni e. Ins ead o c ys alizing
he single–phase o he BFO ma e ial, mul i–phase side p oduc s we e c ys alized [
69
]. The
mechanism o c ys alliza ion side p oduc s is ela ed o he s oichiome ic imbalance [
70
]
o BFO [
71
]. The s oichiome ic imbalance e e s o he asymme ical g ow h o FeO
monome s (some pa icles could e apo a e du ing c ys alliza ion), which a e pa icles
Ma e ials 2022,15, 8719 18 o 28
ha can unde go side eac ions. The chemical equa ion Bi
x
Fe
y
O1.5
x
+ 1.5
y
[
72
] desc ibes
he gene al composi ion o a single–phase BFO [
1
] ma e ial and seconda y phase o new
side p oduc s.
The i s and mos p ominen byp oduc [
73
] o he syn hesis pu e BFO ma e ial
is mulli e e i e Bi
2
Fe
4
O
9
. The ypical cell uni o he mulli e ma e ial is ep esen ed
in Figu e 23. The c ys allog aphic s uc u e o he mulli e is ep esen ed by a cen al
symme ic [
74
], o ho hombic s uc u e [
73
] wi h wo a oms o Bi
+2
, ou a oms o Fe
+2
,
and 9 a oms o oxygen [
75
] wi h di e en alency. The la ice pa ame e s a e a=b=8 Å [
1
],
c=6 Å [
74
] and he cell alue is a ound 400–410 Å [
74
,
76
]. The pa ame e s may di e en ia e
due o s uc u e de ec s du ing he p epa a ion p ocess, and oxygen acancies [
74
]. A
ypical Bi
2
Fe
4
O
9
[
77
] cell uni consis s o FeO
4
e ahed a [
73
,
75
] and FeO
6
oc ahed a [
74
]
o ma ion. The oc ahed al [
78
] bond dis ance is app oxima ely 2 Å, and he e ahed a
dis ance is smalle and s ays wi hin 1.8 Å [74,79] (Figu e 24).
Ma e ials 2022, 14, x FOR PEER REVIEW 18 o 28
disad an age o hese me hods. The high cos o bo h me hods is gi en by he u iliza ion
o lase echnologies, acuum and ine gases, expensi e ma e ials, and equipmen . Bo h
me hods a e sui able he p epa a ion o hin ilms in small quan i ies wi h supe io p op-
e ies and mo phology o p ecise measu emen de ices o p o o ypes.
5. Side Phases o Bismu h Fe i e
The need o cos –e ec i e ene gy sou ces in ol e seeking new and p ospec i e ma-
e ials and echnologies. Conside ing e e inc easing pollu ion and apid de elopmen o
he manu ac u ing indus y, he use o sola ene gy has become an undi ided pa o he
mode n end o u iliza ion o eco– iendly ene gy sou ces. Nowadays ends o designing
mic oelec onic de ises o e new challenges, in ol ing he design o mic oelec onic de-
ices which would be based on manipula ion by elec ic and magne ic pa s. These chal-
lenges equi e in es iga ion and ecache o new ma e ials. Among all ma e ials, mul i e -
oics and especially Bismu h e i e, s ands ou . The BFO ma e ial aims o be a po en ial
solu ion ega ding simul aneous con ol o magne ic and elec ic pa s, since BFO exhibi s
he s onges e oelec ic and magne ic esponse a oom empe a u e.
5.1. Bismu h Mulli e Ma e ial
Du ing in ensi e s udying o Bismu h e i e ma e ial p epa a ion me hods, i was
ound ha du ing he ini ial p epa a ion p ocess o BFO powde s, alongside pu e BFO
ma e ial, o he side–phase ma e ials we e syn hesized. I was shown, due o he agg es-
si e chemical na u e [4] o bismu h, ha BFO causes byp oduc s. These ma e ials ha e
been ca ego ized as impu i ies o he BFO ma e ial. The wo mos popula byp oduc s o
syn hesis o pu e BFO ma e ial a e bismu h Mulli e and I on Seleni e. Ins ead o c ys al-
izing he single–phase o he BFO ma e ial, mul i–phase side p oduc s we e c ys alized
[69]. The mechanism o c ys alliza ion side p oduc s is ela ed o he s oichiome ic imbal-
ance [70] o BFO [71]. The s oichiome ic imbalance e e s o he asymme ical g ow h o
FeO monome s (some pa icles could e apo a e du ing c ys alliza ion), which a e pa i-
cles ha can unde go side eac ions. The chemical equa ion BixFeyO1.5x + 1.5y [72] de-
sc ibes he gene al composi ion o a single–phase BFO [1] ma e ial and seconda y phase
o new side p oduc s.
The i s and mos p ominen byp oduc [73] o he syn hesis pu e BFO ma e ial is
mulli e e i e Bi2Fe4O9. The ypical cell uni o he mulli e ma e ial is ep esen ed in Figu e
23. The c ys allog aphic s uc u e o he mulli e is ep esen ed by a cen al symme ic [74],
o ho hombic s uc u e [73] wi h wo a oms o Bi+2, ou a oms o Fe+2, and 9 a oms o
oxygen [75] wi h di e en alency. The la ice pa ame e s a e a=b=8 Å [1], c=6 Å [74] and
he cell alue is a ound 400–410 Å [74,76]. The pa ame e s may di e en ia e due o s uc-
u e de ec s du ing he p epa a ion p ocess, and oxygen acancies [74]. A ypical Bi2Fe4O9
[77] cell uni consis s o FeO4 e ahed a [73,75] and FeO6 oc ahed a [74] o ma ion. The
oc ahed al [78] bond dis ance is app oxima ely 2 Å , and he e ahed a dis ance is smalle
and s ays wi hin 1.8 Å [74,79] (Figu e 24).
Figu e 23. Cell uni o Bi2Fe4O9 [80].
Figu e 23. Cell uni o Bi2Fe4O9[80].
Ma e ials 2022, 14, x FOR PEER REVIEW 19 o 28
Figu e 24. The cell uni o Bi2Fe4O9 [78].
Fe+3 ca ions a e in bo h e ahed a and oc ahed a o ma ions. FeOn a e dis ibu ed
homogeneously ac oss he uni cell and a e su ounded by Bi ions. Spin momen s o oc-
ahed al [81] FeO6 c ea e couples wi h elec ons o e ahed al he FeO4 spin momen s. The
coupling o FeOn spin momen s lead o a s onge in e ac ion be ween he wo monome s,
hus causing s ong an i– e omagne ic p ope ies [82] o he uni cell (G– ype o de ing).
The an i- e omagne ic esponse is gi en by he in e ac ion o coupled elec on spin mo-
men s o FeO4 and FeO6 monome s and une en spin dis ibu ion, causing o e all geome -
ical dis o ion o spin momen s [82].
I was epo ed ha he mulli e also exhibi s an i– e omagne ic p ope ies close o
he 0 °C [73] empe a u e. The pa amagne ic ansi ion empe a u e o an i e omagne ic
(Neel) o he compound s ays wi hin −23 °C as Cu ie empe a u e was de e mined o be
in he ange o −9 o 0 °C. In addi ion o an i– e omagne ic p ope ies, he mulli e e i e
demons a es e omagne ic o de ing. Fe omagne ic p ope ies a e obse ed by pa allel
o ien a ion o spin momen s ac oss one dimensional axis. Fe oelec ic p ope ies o mul-
li e e i e a e po en ially desc ibed by asymme ical dis ibu ion o hyb idiza ion be-
ween s– and p– o bi als o bismu h ca ions and oxygen acancies.
Howe e , o e all asymme ical us a ion migh be s abilized by he in e ac ion o
SP hyb idiza ion o Bismu h ions and oxygen anions.
Magne ic and e oelec ic p ope ies ( esponse) (Figu e 25) o he mulli e ma e ial
a e size dependen and show simila beha io o pu e BFO ma e ial (Figu e 26). I was
shown ha he smalle pa icles demons a e a s onge e omagne ic esponse, in com-
pa ison o g ea e pa icle size. The inc ease in e omagne ic p ope ies could be de-
sc ibed by a dec eased in e ac ion o e ahed al and oc ahed al spin momen s, changing
he spin layou o a cell uni .
Figu e 25. Hys e esis loop o Mulli e e i e ma e ial a oom empe a u e.
Figu e 24. The cell uni o Bi2Fe4O9[78].
Fe
+3
ca ions a e in bo h e ahed a and oc ahed a o ma ions. FeO
n
a e dis ibu ed
homogeneously ac oss he uni cell and a e su ounded by Bi ions. Spin momen s o oc ahe-
d al [
81
] FeO
6
c ea e couples wi h elec ons o e ahed al he FeO
4
spin momen s. The cou-
pling o FeO
n
spin momen s lead o a s onge in e ac ion be ween he wo monome s, hus
causing s ong an i– e omagne ic p ope ies [
82
] o he uni cell (G– ype o de ing). The
an i- e omagne ic esponse is gi en by he in e ac ion o coupled elec on spin momen s
o FeO
4
and FeO
6
monome s and une en spin dis ibu ion, causing o e all geome ical
dis o ion o spin momen s [82].
I was epo ed ha he mulli e also exhibi s an i– e omagne ic p ope ies close o
he 0
◦
C [
73
] empe a u e. The pa amagne ic ansi ion empe a u e o an i e omagne ic
(Neel) o he compound s ays wi hin
−
23
◦
C as Cu ie empe a u e was de e mined o be
in he ange o
−
9 o 0
◦
C. In addi ion o an i– e omagne ic p ope ies, he mulli e e i e
demons a es e omagne ic o de ing. Fe omagne ic p ope ies a e obse ed by pa allel
o ien a ion o spin momen s ac oss one dimensional axis. Fe oelec ic p ope ies o mulli e
Ma e ials 2022,15, 8719 19 o 28
e i e a e po en ially desc ibed by asymme ical dis ibu ion o hyb idiza ion be ween s–
and p– o bi als o bismu h ca ions and oxygen acancies.
Howe e , o e all asymme ical us a ion migh be s abilized by he in e ac ion o SP
hyb idiza ion o Bismu h ions and oxygen anions.
Magne ic and e oelec ic p ope ies ( esponse) (Figu e 25) o he mulli e ma e ial a e
size dependen and show simila beha io o pu e BFO ma e ial (Figu e 26). I was shown
ha he smalle pa icles demons a e a s onge e omagne ic esponse, in compa ison
o g ea e pa icle size. The inc ease in e omagne ic p ope ies could be desc ibed by
a dec eased in e ac ion o e ahed al and oc ahed al spin momen s, changing he spin
layou o a cell uni .
Ma e ials 2022, 14, x FOR PEER REVIEW 19 o 28
Figu e 24. The cell uni o Bi2Fe4O9 [78].
Fe+3 ca ions a e in bo h e ahed a and oc ahed a o ma ions. FeOn a e dis ibu ed
homogeneously ac oss he uni cell and a e su ounded by Bi ions. Spin momen s o oc-
ahed al [81] FeO6 c ea e couples wi h elec ons o e ahed al he FeO4 spin momen s. The
coupling o FeOn spin momen s lead o a s onge in e ac ion be ween he wo monome s,
hus causing s ong an i– e omagne ic p ope ies [82] o he uni cell (G– ype o de ing).
The an i- e omagne ic esponse is gi en by he in e ac ion o coupled elec on spin mo-
men s o FeO4 and FeO6 monome s and une en spin dis ibu ion, causing o e all geome -
ical dis o ion o spin momen s [82].
I was epo ed ha he mulli e also exhibi s an i– e omagne ic p ope ies close o
he 0 °C [73] empe a u e. The pa amagne ic ansi ion empe a u e o an i e omagne ic
(Neel) o he compound s ays wi hin −23 °C as Cu ie empe a u e was de e mined o be
in he ange o −9 o 0 °C. In addi ion o an i– e omagne ic p ope ies, he mulli e e i e
demons a es e omagne ic o de ing. Fe omagne ic p ope ies a e obse ed by pa allel
o ien a ion o spin momen s ac oss one dimensional axis. Fe oelec ic p ope ies o mul-
li e e i e a e po en ially desc ibed by asymme ical dis ibu ion o hyb idiza ion be-
ween s– and p– o bi als o bismu h ca ions and oxygen acancies.
Howe e , o e all asymme ical us a ion migh be s abilized by he in e ac ion o
SP hyb idiza ion o Bismu h ions and oxygen anions.
Magne ic and e oelec ic p ope ies ( esponse) (Figu e 25) o he mulli e ma e ial
a e size dependen and show simila beha io o pu e BFO ma e ial (Figu e 26). I was
shown ha he smalle pa icles demons a e a s onge e omagne ic esponse, in com-
pa ison o g ea e pa icle size. The inc ease in e omagne ic p ope ies could be de-
sc ibed by a dec eased in e ac ion o e ahed al and oc ahed al spin momen s, changing
he spin layou o a cell uni .
Figu e 25. Hys e esis loop o Mulli e e i e ma e ial a oom empe a u e.
Figu e 25. Hys e esis loop o Mulli e e i e ma e ial a oom empe a u e.
Ma e ials 2022, 14, x FOR PEER REVIEW 20 o 28
Figu e 26. Bi2Fe4O9 ilm: (a) opology; (b) c oss–sec ion [82].
Recen epo s claim he e oelec ic esponse is negligible, conside ing he symme -
ical o ien a ion o uni cell by he cen al axis. The e o e, i is necessa y o ind a sui able
solu ion o enhance he magne ic and e oelec ic p ope ies o he mulli e o u u e im-
plemen a ion in o mul i unc ioning de ices. A po en ial solu ion would be adding impu-
i ies o a e–ea h ma e ial o compensa e oxygen acancies. I was p o en ha a e–ea h
ma e ial, such as lan hanum and magnesium, d ama ically enhance e oelec ic p ope -
ies [73].
Mulli e is widely sp ead [83] in chemis y and senso de ices. The ma e ial is ex-
emely sensi i e on alkali apo s and was success ully used as a gas [84] leakage senso .
The mulli e p o es o be a g ea and cheap ca alyze o chemical eac ions, such as he
decomposi ion o ammonia o ni a e oxide.
Recen esea ch epo s he exis ence o di e en eac ions o isible–ligh abso p ion,
which sugges s he ma e ial possesses pho oca alys [85] and pho oelec ic p ope ies.
Hence, Mulli e can be used o he u iliza ion o sola [86] adia ion. The ma e ial shows
wa eleng hs abso p ion wi hin he ange o 350–700 nm [86] (Figu e 27). The ange o
wa eleng hs co esponds wi h 2–3 eV [79].
Figu e 27. Ligh abso p ion cu e o Bi2Fe4O9.
The pho oca aly ic [85,87] p ope ies p o e ha he ma e ial has a lowe bandgap
po en ial [88], which is a conside able ad an age, and make he ma e ial a ac i e o
ligh de ec ion senso s and pho o ol aic applica ion [88].
Mulli e is a p o en, e y p omising ma e ial o be implemen ed in o new ypes o
senso s. Mulli e is widely used in he a ea o senso s o de ec ing gas leakage due o i s
chemical na u e, and in o ganic chemis y as an enhance o chemical eac ions [1]. The
ull po en ial o he ma e ial is s ill no e ealed; hus, mo e and deepe s udying is e-
qui ed.
5.2. I on Seleni e Ma e ial
Bismu h e i e is ep esen ed in wo di e en s uc u es: pe o ski e cell and Seleni e
ma e ial. I on Seleni e ma e ial (Bi25FeO40) [87,89] has been encoun e ed du ing he syn-
hesis o pu e phase BFO ma e ial. Seleni e d aws a lo o a en ion nowadays due o i s
Figu e 26. Bi2Fe4O9 ilm: (a) opology; (b) c oss–sec ion [82].
Recen epo s claim he e oelec ic esponse is negligible, conside ing he symme i-
cal o ien a ion o uni cell by he cen al axis. The e o e, i is necessa y o ind a sui able
solu ion o enhance he magne ic and e oelec ic p ope ies o he mulli e o u u e
implemen a ion in o mul i unc ioning de ices. A po en ial solu ion would be adding
impu i ies o a e–ea h ma e ial o compensa e oxygen acancies. I was p o en ha
a e–ea h ma e ial, such as lan hanum and magnesium, d ama ically enhance e oelec ic
p ope ies [73].
Mulli e is widely sp ead [
83
] in chemis y and senso de ices. The ma e ial is ex emely
sensi i e on alkali apo s and was success ully used as a gas [
84
] leakage senso . The mulli e
p o es o be a g ea and cheap ca alyze o chemical eac ions, such as he decomposi ion
o ammonia o ni a e oxide.
Recen esea ch epo s he exis ence o di e en eac ions o isible–ligh abso p ion,
which sugges s he ma e ial possesses pho oca alys [
85
] and pho oelec ic p ope ies.
Hence, Mulli e can be used o he u iliza ion o sola [
86
] adia ion. The ma e ial shows
wa eleng hs abso p ion wi hin he ange o 350–700 nm [
86
] (Figu e 27). The ange o
wa eleng hs co esponds wi h 2–3 eV [79].
Ma e ials 2022,15, 8719 20 o 28
Ma e ials 2022, 14, x FOR PEER REVIEW 20 o 28
Figu e 26. Bi2Fe4O9 ilm: (a) opology; (b) c oss–sec ion [82].
Recen epo s claim he e oelec ic esponse is negligible, conside ing he symme -
ical o ien a ion o uni cell by he cen al axis. The e o e, i is necessa y o ind a sui able
solu ion o enhance he magne ic and e oelec ic p ope ies o he mulli e o u u e im-
plemen a ion in o mul i unc ioning de ices. A po en ial solu ion would be adding impu-
i ies o a e–ea h ma e ial o compensa e oxygen acancies. I was p o en ha a e–ea h
ma e ial, such as lan hanum and magnesium, d ama ically enhance e oelec ic p ope -
ies [73].
Mulli e is widely sp ead [83] in chemis y and senso de ices. The ma e ial is ex-
emely sensi i e on alkali apo s and was success ully used as a gas [84] leakage senso .
The mulli e p o es o be a g ea and cheap ca alyze o chemical eac ions, such as he
decomposi ion o ammonia o ni a e oxide.
Recen esea ch epo s he exis ence o di e en eac ions o isible–ligh abso p ion,
which sugges s he ma e ial possesses pho oca alys [85] and pho oelec ic p ope ies.
Hence, Mulli e can be used o he u iliza ion o sola [86] adia ion. The ma e ial shows
wa eleng hs abso p ion wi hin he ange o 350–700 nm [86] (Figu e 27). The ange o
wa eleng hs co esponds wi h 2–3 eV [79].
Figu e 27. Ligh abso p ion cu e o Bi2Fe4O9.
The pho oca aly ic [85,87] p ope ies p o e ha he ma e ial has a lowe bandgap
po en ial [88], which is a conside able ad an age, and make he ma e ial a ac i e o
ligh de ec ion senso s and pho o ol aic applica ion [88].
Mulli e is a p o en, e y p omising ma e ial o be implemen ed in o new ypes o
senso s. Mulli e is widely used in he a ea o senso s o de ec ing gas leakage due o i s
chemical na u e, and in o ganic chemis y as an enhance o chemical eac ions [1]. The
ull po en ial o he ma e ial is s ill no e ealed; hus, mo e and deepe s udying is e-
qui ed.
5.2. I on Seleni e Ma e ial
Bismu h e i e is ep esen ed in wo di e en s uc u es: pe o ski e cell and Seleni e
ma e ial. I on Seleni e ma e ial (Bi25FeO40) [87,89] has been encoun e ed du ing he syn-
hesis o pu e phase BFO ma e ial. Seleni e d aws a lo o a en ion nowadays due o i s
Figu e 27. Ligh abso p ion cu e o Bi2Fe4O9.
The pho oca aly ic [
85
,
87
] p ope ies p o e ha he ma e ial has a lowe bandgap
po en ial [
88
], which is a conside able ad an age, and make he ma e ial a ac i e o ligh
de ec ion senso s and pho o ol aic applica ion [88].
Mulli e is a p o en, e y p omising ma e ial o be implemen ed in o new ypes o
senso s. Mulli e is widely used in he a ea o senso s o de ec ing gas leakage due o i s
chemical na u e, and in o ganic chemis y as an enhance o chemical eac ions [
1
]. The ull
po en ial o he ma e ial is s ill no e ealed; hus, mo e and deepe s udying is equi ed.
5.2. I on Seleni e Ma e ial
Bismu h e i e is ep esen ed in wo di e en s uc u es: pe o ski e cell and Seleni e
ma e ial. I on Seleni e ma e ial (Bi
25
FeO
40
) [
87
,
89
] has been encoun e ed du ing he syn he-
sis o pu e phase BFO ma e ial. Seleni e d aws a lo o a en ion nowadays due o i s unique
and s ong pho oca aly ic [
90
] p ope ies [
91
], which is a popula subjec o esea ch. Selen-
i e belongs o semiconduc o amily and was p o en o be a e y eco– iendly ma e ial o
a wide a ie y o applica ions. In addi ion, Seleni e has become an ou s anding candida e
o sola ligh u iliza ion echnologies due o he slowe a e o sunligh deg ada ion, low
bandgap po en ial [
91
,
92
] and o e all ha sh chemical en i onmen esis ance. A supe io
pa amagne ic esponse is ano he ad an age o he ma e ial, making i easily ob ained and
sepa a ed om pu e BFO ma e ial du ing he syn hesis p ocess. The exis ence o a hys e e-
sis cu e nea oom empe a u e ange sugges s e oelec ic and dielec ic p ope ies o
Seleni e ma e ial.
Seleni e ma e ial (Figu e 28) occu s as ano he side p oduc o he syn hesis o pu e
BFO ma e ial. I was p o en by many expe imen s [
89
,
92
,
93
] ha he mos widesp ead
me hods o ob ain pu e phase Seleni e ma e ial a e he sol gel and hyd o he mal g ow
me hods. Seleni e is usually ob ained om a chemical p ecu so o bismu h ni ide and
i on ni ide wa e –soluble sal s wi h an ope a ional empe a u e a ound 650–750
◦
C [
92
,
94
].
Ma e ials 2022, 14, x FOR PEER REVIEW 21 o 28
unique and s ong pho oca aly ic [90] p ope ies [91], which is a popula subjec o e-
sea ch. Seleni e belongs o semiconduc o amily and was p o en o be a e y eco– iendly
ma e ial o a wide a ie y o applica ions. In addi ion, Seleni e has become an ou s and-
ing candida e o sola ligh u iliza ion echnologies due o he slowe a e o sunligh
deg ada ion, low bandgap po en ial [91,92] and o e all ha sh chemical en i onmen e-
sis ance. A supe io pa amagne ic esponse is ano he ad an age o he ma e ial, making
i easily ob ained and sepa a ed om pu e BFO ma e ial du ing he syn hesis p ocess. The
exis ence o a hys e esis cu e nea oom empe a u e ange sugges s e oelec ic and
dielec ic p ope ies o Seleni e ma e ial.
Seleni e ma e ial (Figu e 28) occu s as ano he side p oduc o he syn hesis o pu e
BFO ma e ial. I was p o en by many expe imen s [89,92,93] ha he mos widesp ead
me hods o ob ain pu e phase Seleni e ma e ial a e he sol gel and hyd o he mal g ow
me hods. Seleni e is usually ob ained om a chemical p ecu so o bismu h ni ide and
i on ni ide wa e –soluble sal s wi h an ope a ional empe a u e a ound 650–750 °C
[92,94].
Figu e 28. I on Seleni e powde c ys als [91].
The c ys allog aphic s uc u e o he Seleni e uni (Figu e 28) is ep esen ed by cubic
asymme ical I23 space o ien a ion wi h la ice pa ame e s a = b = c = 10 Å and he es i-
ma ed c ys al alue is abou 250 Å . In his o ien a ion bismu h ca ions wi h alence Bi+3
[92], oge he wi h su ounding oxygen a oms, o m incomple e BiO5 oc ahed al uni s.
The in e a omic dis ance be ween Bi+3 and sha ed oxygen a oms is a ound 2–2.5 Å . The
oc ahed al uni is comple ed by he ine 6s2 [92] pai . An aniso opic ib a ion is shown
in Bi+3 a oms. Each Fe+3 [92] and Bi+5 [92] ca ion o ms e ahed al [92] uni s. Bi+5 ions cause
dis ibu ion no only o he e ahed al uni , bu also o he en i e chemical s uc u e. Bi+5
[92] ca ions a e p esen in he cell uni which leads o he chemical o mula o
Bi24+3(Bi+5Fe+3)O40 [92] wi h s oichiome ic o ma ion.
Seleni e shows weak e omagne ic ac i i y wi h ansi ional empe a u e, a ound –
5–0 C° [92], and signi ican spon aneous magne iza ion a oom empe a u e.
Seleni e is conside ed a pe ec candida e o he pho o–Fen on [95,96] eac ion en-
hance . The pho o–Fen on [95,96] eac ions s and o ad ance oxida ion whe e o ganic
compounds a e decomposed and disin ec in wa e . Ne e heless, insu icien su ace
ansi ion o Fe+2/Fe+3 [92] limi s he pho o–Fen on [95] (Figu e 29) eac ion enhancing ac-
i i y o he ma e ial. I on Seleni e shows ema kable p ope ies, which a e use ul in pie-
zoelec ic [92] and especially in pho o [97] applica ions.
Figu e 28. I on Seleni e powde c ys als [91].
Ma e ials 2022,15, 8719 21 o 28
The c ys allog aphic s uc u e o he Seleni e uni (Figu e 28) is ep esen ed by cubic
asymme ical I23 space o ien a ion wi h la ice pa ame e s a = b = c = 10 Å and he
es ima ed c ys al alue is abou 250 Å. In his o ien a ion bismu h ca ions wi h alence
Bi
+3
[
92
], oge he wi h su ounding oxygen a oms, o m incomple e BiO
5
oc ahed al
uni s. The in e a omic dis ance be ween Bi
+3
and sha ed oxygen a oms is a ound
2–2.5 Å
.
The oc ahed al uni is comple ed by he ine 6s
2
[
92
] pai . An aniso opic ib a ion is
shown in Bi
+3
a oms. Each Fe
+3
[
92
] and Bi
+5
[
92
] ca ion o ms e ahed al [
92
] uni s. Bi
+5
ions cause dis ibu ion no only o he e ahed al uni , bu also o he en i e chemical
s uc u e. Bi
+5
[
92
] ca ions a e p esen in he cell uni which leads o he chemical o mula
o Bi24+3(Bi+5Fe+3)O40 [92] wi h s oichiome ic o ma ion.
Seleni e shows weak e omagne ic ac i i y wi h ansi ional empe a u e, a ound
–5–0 C◦[92], and signi ican spon aneous magne iza ion a oom empe a u e.
Seleni e is conside ed a pe ec candida e o he pho o–Fen on [
95
,
96
] eac ion en-
hance . The pho o–Fen on [
95
,
96
] eac ions s and o ad ance oxida ion whe e o ganic
compounds a e decomposed and disin ec in wa e . Ne e heless, insu icien su ace
ansi ion o Fe
+2
/Fe
+3
[
92
] limi s he pho o–Fen on [
95
] (Figu e 29) eac ion enhancing
ac i i y o he ma e ial. I on Seleni e shows ema kable p ope ies, which a e use ul in
piezoelec ic [92] and especially in pho o [97] applica ions.
Ma e ials 2022, 14, x FOR PEER REVIEW 22 o 28
Figu e 29. Pho oca aly ic [98] eac ion mechanism o i on Seleni e and Mulli e unde ligh adia-
ion
Conside ing e en he lowe band gap [99] o I on-Seleni e, in compa ison o pu e
Bismu h e i e (2–3 eV [100]), he ma e ial was p o en o be an excep ionally good abso -
ben o ul a iole [101] and isible ligh adia ion a ac ing much a en ion. The band
gap [102] o I on Seleni e s ands unde 2 eV [92], which is much lowe among mos o he
con en ional pho o–ac i e ma e ials. By analyzing he abso p ion [99] ac i i y, i was
ound ha he abso p ion a e o I on Seleni e is e en highe compa ed o Mulli e Fe i e.
The wa eleng h abso p ion [103] ange o Mulli e s ays wi hin 600–850 nm, whe eas o
I on Seleni e i is much wide wi hin 500–900 nm [99,101] (Figu e 30), and wi h a smo he
abso p ion a e a highe wa eleng hs, esul ing in s onge op ical abso p ion capabili-
ies.
Figu e 30. Visible ligh [47] abso p ion spec um [104] o I on Seleni e.
In ecen yea s, I on Seleni e (Figu e 28) was widely used in digi al logic and senso
de ices due o he exis ence o a hys e esis loop. A hys e esis loop sugges s he exis ence
o magne ic and elec ic coupling which could be changed by applying a magne ic and/o
elec ic ield. The pa amagne ic beha io o he ma e ial is ano he aspec which makes
he ma e ial a po en ial candida e o digi al applica ions.
The pe o ski e–like c ys allog aphic o ien a ion o I on Seleni e and chemical s uc-
u e o he ma e ial open new oppo uni ies o he implemen a ion o a wide a ie y o
impu i ies. Impu i ies a e necessa y o compensa e o acancies o e apo a ed oxygen
and/o Bismu h a oms, which is majo issue o con en ional, high– empe a u e deposi ion
me hods. Impu i y changes he o e all spin s uc u e, hus enhancing he unique e o-
magne ic and e oelec ic p ope ies o he compound.
Al hough he Seleni e ma e ial was widely s udied, he ull po en ial o he ma e ial
is no ye e ealed and equi es u he and deepe in es iga ion.
6. Discussion
BFO ma e ial is an ou s anding ma e ial, which combines a a ie y o unique p op-
e ies, including high emnan pola iza ion, na ow bandgap po en ial e oelec ic, mag-
ne ic coupling, e c. In addi ion o unique e omagne ic p ope ies, Bismu h e i e shows
Figu e 29.
Pho oca aly ic [
98
] eac ion mechanism o i on Seleni e and Mulli e unde ligh adia ion.
Conside ing e en he lowe band gap [
99
] o I on-Seleni e, in compa ison o pu e
Bismu h e i e (2–3 eV [
100
]), he ma e ial was p o en o be an excep ionally good ab-
so ben o ul a iole [
101
] and isible ligh adia ion a ac ing much a en ion. The band
gap [
102
] o I on Seleni e s ands unde 2 eV [
92
], which is much lowe among mos o
he con en ional pho o–ac i e ma e ials. By analyzing he abso p ion [
99
] ac i i y, i was
ound ha he abso p ion a e o I on Seleni e is e en highe compa ed o Mulli e Fe i e.
The wa eleng h abso p ion [
103
] ange o Mulli e s ays wi hin 600–850 nm, whe eas o
I on Seleni e i is much wide wi hin 500–900 nm [
99
,
101
] (Figu e 30), and wi h a smo he
abso p ion a e a highe wa eleng hs, esul ing in s onge op ical abso p ion capabili ies.
Ma e ials 2022, 14, x FOR PEER REVIEW 22 o 28
Figu e 29. Pho oca aly ic [98] eac ion mechanism o i on Seleni e and Mulli e unde ligh adia-
ion
Conside ing e en he lowe band gap [99] o I on-Seleni e, in compa ison o pu e
Bismu h e i e (2–3 eV [100]), he ma e ial was p o en o be an excep ionally good abso -
ben o ul a iole [101] and isible ligh adia ion a ac ing much a en ion. The band
gap [102] o I on Seleni e s ands unde 2 eV [92], which is much lowe among mos o he
con en ional pho o–ac i e ma e ials. By analyzing he abso p ion [99] ac i i y, i was
ound ha he abso p ion a e o I on Seleni e is e en highe compa ed o Mulli e Fe i e.
The wa eleng h abso p ion [103] ange o Mulli e s ays wi hin 600–850 nm, whe eas o
I on Seleni e i is much wide wi hin 500–900 nm [99,101] (Figu e 30), and wi h a smo he
abso p ion a e a highe wa eleng hs, esul ing in s onge op ical abso p ion capabili-
ies.
Figu e 30. Visible ligh [47] abso p ion spec um [104] o I on Seleni e.
In ecen yea s, I on Seleni e (Figu e 28) was widely used in digi al logic and senso
de ices due o he exis ence o a hys e esis loop. A hys e esis loop sugges s he exis ence
o magne ic and elec ic coupling which could be changed by applying a magne ic and/o
elec ic ield. The pa amagne ic beha io o he ma e ial is ano he aspec which makes
he ma e ial a po en ial candida e o digi al applica ions.
The pe o ski e–like c ys allog aphic o ien a ion o I on Seleni e and chemical s uc-
u e o he ma e ial open new oppo uni ies o he implemen a ion o a wide a ie y o
impu i ies. Impu i ies a e necessa y o compensa e o acancies o e apo a ed oxygen
and/o Bismu h a oms, which is majo issue o con en ional, high– empe a u e deposi ion
me hods. Impu i y changes he o e all spin s uc u e, hus enhancing he unique e o-
magne ic and e oelec ic p ope ies o he compound.
Al hough he Seleni e ma e ial was widely s udied, he ull po en ial o he ma e ial
is no ye e ealed and equi es u he and deepe in es iga ion.
6. Discussion
BFO ma e ial is an ou s anding ma e ial, which combines a a ie y o unique p op-
e ies, including high emnan pola iza ion, na ow bandgap po en ial e oelec ic, mag-
ne ic coupling, e c. In addi ion o unique e omagne ic p ope ies, Bismu h e i e shows
Figu e 30. Visible ligh [47] abso p ion spec um [104] o I on Seleni e.

Ma e ials 2022,15, 8719 22 o 28
In ecen yea s, I on Seleni e (Figu e 28) was widely used in digi al logic and senso
de ices due o he exis ence o a hys e esis loop. A hys e esis loop sugges s he exis ence o
magne ic and elec ic coupling which could be changed by applying a magne ic and/o
elec ic ield. The pa amagne ic beha io o he ma e ial is ano he aspec which makes he
ma e ial a po en ial candida e o digi al applica ions.
The pe o ski e–like c ys allog aphic o ien a ion o I on Seleni e and chemical s uc-
u e o he ma e ial open new oppo uni ies o he implemen a ion o a wide a ie y o
impu i ies. Impu i ies a e necessa y o compensa e o acancies o e apo a ed oxygen
and/o Bismu h a oms, which is majo issue o con en ional, high– empe a u e deposi-
ion me hods. Impu i y changes he o e all spin s uc u e, hus enhancing he unique
e omagne ic and e oelec ic p ope ies o he compound.
Al hough he Seleni e ma e ial was widely s udied, he ull po en ial o he ma e ial is
no ye e ealed and equi es u he and deepe in es iga ion.
6. Discussion
BFO ma e ial is an ou s anding ma e ial, which combines a a ie y o unique p ope -
ies, including high emnan pola iza ion, na ow bandgap po en ial e oelec ic, magne ic
coupling, e c. In addi ion o unique e omagne ic p ope ies, Bismu h e i e shows his
unique combina ion a oom empe a u e. This ma e ial o e s e sa ili y o explo a ion
o new echnologies wi h complex unc ions. Despi e ha ing a unique combina ion o
e oelec ic and magne ic p ope ies, he high pa asi ic cu en is signi ican downside
o he ma e ial, which limi s i s implemen a ion in o la ge-scale de ices. Many s a egies
we e o e ed o enhance and modi y o e all pe o mance and dec ease pa asi ic cu en .
New low– empe a u e deposi ion me hods (PLD, ALD, e c.), p ope implemen a ion o
a e–ea h ma e ials impu i ies and s aining BFO ma e ial in o hin ilms achie e g ea
esul s o enhancing pe o mance o BFO ma e ial. The implemen a ion o new s a egies
d i es he u iliza ion o BFO ma e ial in di e en ields, such as pho o ol aic, piezoelec ic,
senso ics and memo y de ices. Ne e heless, e en hough g ea esul s ha e been achie ed,
many challenges emain. I is necessa y o u he enhance he magne ic esponse o he
ma e ial be o e inco po a ing i in o la ge-scale de ices. The c ys allog aphic s uc u e o
Bismu h e i e is ep esen ed by a hombohed al pe o ski e s uc u e. In his s uc u e,
he ma e ial exhibi s a e oelec ic esponse due o he esidual magne ic spin o ien a ion
o a single cell uni . The pe o ski e s uc u e o e s oppo uni ies o implemen a ion o
di e en ma e ials o imp o e an o e all spin s uc u e by compensa ion o dec eased
alency o Fe a oms, esul ing in s onge e oelec ic esponse and dec eased pa asi ic
cu en . The pa asi ic cu en is gi en by de ec s o c ys allog aphic s uc u e o Bismu h
e i e du ing he ini ial deposi ion me hod. One o he mos common causes o pa asi ic
cu en is e apo a ion o Bi a oms and a dec ease o alency o Fe a oms. A high ope a ional
empe a u e esul ing in a high e apo a ion a e o chemically ola ile Bismu h, sugges s
ha he modi ica ion (o choice) deposi ion me hod ope a es wi h he lowe empe a u e
ange. The bes sui able deposi ion me hods o p epa a ion o Bismu h e i e ma e ial
a e Pulsed lase Deposi ion (PLD) and A omic Laye Deposi ion (ALD), since hey ope a e
in a ela i ely low empe a u e ange and o e ou s anding con ol o e mo phology
o inal p oduc s. A low ange o ope a ional empe a u es is ex emely impo an o
he e alua ion o e oelec ic p ope ies o he p oduced BFO ma e ial, conside ing he
chemical ola ili y o Bismu h a oms. Conside ing he pe o ski e–like s uc u e, he impu-
i ies o di e en ma e ial aim o enhance elec omagne ic coupling o BFO. Impu i ies o
a e–ea h ma e ials no only s abilize he c ys al s uc u e o BFO bu also d ama ically
inc ease he magne ic esponse due o close in e ac ion o spin momen s o he en i e
cell uni . Implemen a ion o a e–ea h ma e ials conside ably inc ease he ansi ion be-
ween e omagne ic and an i e omagne ic phases due o he elimina ion o he cycloid
spin momen , allowing a s ong magne ic esponse o occu . Mos s udied impu i ies
o a e–ea h ma e ials a e Ti anium, Neodymium, Lan hanum, Sama ium, Eu opium,
P aseodymium; implemen a ion o hese ma e ials causes a signi ican inc ease o elec o-
Ma e ials 2022,15, 8719 23 o 28
magne ic coupling [
105
,
106
]. Ano he po en ial solu ion o enhance e oelec ic esponse
is a dec ease in cell uni size. The dec ease o cell size could be achie ed by s aining he
BFO ma e ial in o hin ilms by applying p essu e, which leads o a ans o ma ion be ween
e omagne ic and an i e omagne ic phases (mo pho opic phase bounda y). Smalle cell
uni s show g ea e e oelec ic esponse due o a s onge in e ac ion o spin momen s
o he single cell uni . The exis ence o he mo pho opic phase ans o ma ion unde
applied mechanical p essu e allows he disco e y o new ways o enhancemen o o e all
e oelec ic p ope ies, which could d ama ically dec ease p oduc ion cos s o new ypes
o e oelec ic ma e ials o po en ial complex de ices. The mos e sa ile o m o BFO
ma e ial, which o e s a wide a ie y o p oduced pa icles and modi ica ions, is hin ilm.
Among o he o ms o BFO ma e ial (powde s, nanopa icles), hin ilms a e excep ionally
e sa ile and can be easily in eg a ed in o la ge-scale de ices. In addi ion o e sa ili y,
di e en ma e ials could be implemen ed in o he hin ilm s uc u e o enhance he unique
p ope ies o BFO ma e ial. Besides hin ilms, BFO ma e ial was ex ensi ely used o he
p epa a ion o BFO-based ce amics due o i s empe a u e s abili y. BFO is a lead– ee,
non– oxic ma e ial wi h he elec ical s uc u e o bismu h molecules being simila o Pb.
The pe o ski e–like s uc u e o BFO allows o he c ea ion o he mo pho opic phase
ans o ma ion enabling he achie emen o maximized piezoelec ic esponse. Ne e he-
less, p oblems wi h he p epa a ion o BFO–based ce amics associa ed wi h high ope a ion
empe a u es and un o una e combina ion o low elec ical esis ance and coe ci e ield
o BFO ma e ial cause di icul ies wi h esea ch o he piezoelec ic esponse and domain
beha io . These easons we e a he beginning o nume ous esea ch a enues o po en ial
modi ica ion o BFO–based ce amics. The mos in e es ing compounds a e BaTiO
3
, Bi–
K–TiO, Bi–Na–Ti–O, and Bi(Zn–Ti)O, since hese compounds enhance Cu ie empe a u e
and piezoelec ic esponse. Un o una ely, he p ope ies o hese compounds ha e no
been sys emized.
Byp oduc s o he BFO ma e ial c ys alliza ion we e disco e ed du ing he ini ial
deposi ion p ocess. Mulli e and I on Seleni e a e wo common byp oduc s, which we e
unde in ense in es iga ion, conside ing he uniqueness o hei p ope ies. The s ong
pho oelec ic esponse and isible ligh abso p ions capabili ies o bo h byp oduc s was
p o en i al o pho o ol aic applica ions and de ices.
7. Conclusions
This pape p o ided a e iew o he BFO ma e ial. The easons o making Bismu h
e i e unique o e o he mul i e oic ma e ial has been desc ibed. The c ys allog aphic
s uc u e o he ma e ial is ep esen ed by a cubic Rhombohed al pe o ski e s uc u e. This
pape desc ibes he c ys allog aphic s uc u e o BFO ma e ial in de ail, including he spin
s uc u e o a single cell uni e and hei e ec on e oelec ic and magne ic p ope ies. The
main disad an age o he ma e ial is he pa asi ic cu en . The eason o he occu ence
o pa asi ic cu en and po en ial solu ions o how o dec ease pa asi ic cu en ha e been
desc ibed. Bismu h e i e is syn hesized in di e en o ms, such as powde s, nanopa icles
and hin ilms. Thin ilms o he BFO ma e ial a e he mos widesp ead and popula o m
o he ma e ial. Mo phology, p ope ies, a ie y o hicknesses and hei e ec on leakage
cu en ha e been desc ibed in de ail.
The deposi ion me hods o hin ilms include: he sol gel me hod, Pulsed Lased
Deposi ion (PLD), and A omic Laye Deposi ion (ALD). Thei ope a ional p inciple, com-
pa ison, ad an ages, and disad an ages o p epa a ion o BFO hin ilms ha e been
men ioned. Among he desc ibed me hods, ALD and PLD a e supe io me hods, allowing
he deposi ion o a single a omic laye s oichiome ic he e os uc u e o hin ilms wi h
minimal con amina ion.
I was disco e ed ha hin ilms include byp oduc s o Bismu h e i e. I on Seleni e
and Bismu h Mulli e a e he ypical byp oduc s o he ini ial syn hesis o BFO ilms. The
chemical and c ys allog aphic s uc u e o bo h byp oduc ma e ials ha e been desc ibed.
Supe io isible ligh abso p ion, and s ong pho oelec ic p ope ies ha e been men ioned.
Ma e ials 2022,15, 8719 24 o 28
Fu u e pe spec i es o he hesis will lie wi h analyzing samples o he BFO ma e ial.
Samples will be p epa ed by he PLD me hod on ce amic subs a es wi h a pla inum bu e
laye . Analyzing me hods include opog aphy analysis by a omic o ce mic oscopy (AFM)
and nea – ield scanning op ical mic oscopy (SNOM), due o hei a ailabili y a he esea ch
acili y and uncomplica ed scanning p ocedu e. In addi ion o AFM and SNOM mic oscopy,
opog aphy o p epa ed samples will by s udied by scanning elec on mic oscopy (SEM)
and ocused ion beam (FIB); bo h me hods will p o ide de ailed in o ma ion o c oss
sec ion and hickness o BFO and pla inum bu e laye o p oduced samples. To de e mine
whe he he e a e any byp oduc s p esen in p oduced samples, Raman spec oscopy will
be ex ensi ely used. In he case o disco e y o po en ial byp oduc s o he BFO ma e ial
he a emp o ex ac ion will be ca ied ou .
Funding:
This esea ch was unded by he Czech ounda ion Agency (GA 19–17457S),
P ojec ID: 29780
.
Ins i u ional Re iew Boa d S a emen : No applicable.
In o med Consen S a emen : No applicable.
Da a A ailabili y S a emen : The s udy did no epo any da a.
Con lic s o In e es : The au ho s decla e no con lic o in e es .
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