Flow- h ough Gas Phase Pho oca alysis Using TiO2Nano ubes on
Wi elessly Anodized 3D-P in ed TiNb Meshes
Hanna Sopha, Adelia Kashimbe o a, Michal Baudys, Pa an Kuma Chennam, Ma cela Sepul eda,
Jakub Rusek, E a Kolibalo a, Ladisla Celko, Edga B. Mon u a , Jose K ysa, and Jan M. Macak*
Ci e This: Nano Le . 2023, 23, 6406−6413
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ABSTRACT: In his wo k, o he i s ime 3D Ti-Nb meshes o
di e en composi ion, i.e., Ti, Ti-1Nb, Ti-5Nb, and Ti-10 Nb, we e
p oduced by di ec ink w i ing. This addi i e manu ac u ing
me hod allows uning o he mesh composi ion by simple blending
o pu e Ti and Nb powde s. The 3D meshes a e ex emely obus
wi h a high comp essi e s eng h, gi ing po en ial use in
pho oca aly ic low- h ough sys ems. A e success ul wi eless
anodiza ion o he 3D meshes owa d Nb-doped TiO2nano ube
(TNT) laye s using bipola elec ochemis y, hey we e employed
o he i s ime o pho oca aly ic deg ada ion o ace aldehyde in
a low- h ough eac o buil based on ISO s anda ds. Nb-doped
TNT laye s wi h low concen a ions o Nb show supe io
pho oca aly ic pe o mance compa ed wi h nondoped TNT laye s
due o he lowe amoun o ecombina ion su ace cen e s. High concen a ions o Nb lead o an inc eased numbe o ecombina ion
cen e s wi hin he TNT laye s and educe he pho oca aly ic deg ada ion a es.
KEYWORDS: Nb-doped TiO2nano ube laye s, bipola elec ochemis y, TiNb mesh, 3D p in ing, di ec ink w i ing, pho oca alysis
Semiconduc o s a e o high in e es in he ield o
pho oca alysis, e.g., o he pho oca aly ic deg ada ion o
pollu an s. Especially TiO2is equen ly used o such
applica ions, as i has p o en o be an excellen and s able
pho oca alys wi h low p oduc ion cos s.
1
Howe e , TiO2has
some d awbacks, such as a high bandgap o 3.2 eV enabling
jus he abso p ion o UV ligh and a high amoun o elec on−
hole ecombina ion cen e s. The e o e, TiO2is o en doped
wi h ansi ion me als, such as W, Co, Fe, Mo, o Nb, o
inc ease i s e iciency as pho oca alys .
2−5
Nb doping was
shown in se e al publica ions o enhance he pho oca aly ic
ac i i y o he deg ada ion o pollu an s.
2−8
Nb5+ can
subs i u e Ti4+ in he TiO2la ice, adding an addi ional
alence elec on, and he e o e, i ac s as a dono a om. Cha ge
compensa ion can be achie ed ei he by ca ion acancies o by
s oichiome ic educ ion o Ti4+ o Ti3+.
2,9
U iliza ion o a nanos uc u ed pho oca alys signi ican ly
inc eases he su ace a ea o he ca alys , which esul s in a
highe e iciency. Among many di e en TiO2nanos uc u es,
as o ins ance nanopa icles, nano ods, nano ibe s and
nano ubes, TiO2nano ube (TNT) laye s p oduced ia
anodiza ion ha e a ac ed eno mous a en ion wi hin he
pas 20 yea s.
10,11
The ad an ages o such TNT laye s o e
TNTs p oduced in powde o m by o he me hods (e.g.,
hyd o he mally) a e hei e ical alignmen esul ing in a high
deg ee o o de , hei s ong in e connec ion, and hei
connec ion o he unde lying Ti subs a e, enabling hei use
wi hou any u he immobiliza ion. Addi ionally, by anodizing
Ti alloys, me al doped TNT laye s can easily be ab i-
ca ed.
12−16
Since he i s epo s on he anodiza ion o TiNb
alloys,
13,17
such Nb-doped TNT laye s ha e been shown o be
e y e icien in many di e en applica ions, such as dye-
sensi ized sola cells (DSSC),
18
pho oca alysis,
19
biomedical
applica ions,
20
o he pho oca aly ic CO2con e sion owa d
ace aldehyde.
21
Wi hin he las yea s, mo e complica ed Ti subs a es, such
as meshes,
22−25
wi es,
26−28
o sphe es,
29
ha e been employed
o TNT laye ab ica ion, maximizing he anodized su ace
a ea o ca aly ic applica ions. Among o he s, such mo e
complica ed 3D Ti subs a es can be p oduced using addi i e
manu ac u ing. Howe e , hough addi i e manu ac u ing o e s
he ab ica ion a ple ho a o di e en shapes, a he ew s udies
ha e shown hei modi ica ion wi h TNT laye s.
25,30−37
These
ha e been mainly pu e Ti and biomedical Ti6Al4V alloy wi h
he aim o hei applica ion as implan s.
30−36
Howe e , also
Recei ed: Ma ch 26, 2023
Re ised: June 30, 2023
Published: July 12, 2023
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TiNb-based alloys ha e been shown o be p oducible using
addi i e manu ac u ing, by using ei he selec i e lase mel ing
(SLM)/lase -based powde bed usion (LB-PBF),
38−44
o lase
enginee ed ne shaping (LENS)/lase di ec ed ene gy
deposi ion.
45,46
Di ec ink w i ing (DIW) has so a no been
used o he p oduc ion o TiNb alloys, al hough DIW has he
ad an age o simple powde blending, mic os uc u al con ol
h ough he sin e ing egimen, and using jus he amoun o
me al powde needed o p in ing, hus educing he
en i onmen al oo p in and p oduc ion cos .
47
The anodiza ion o such complica ed 3D Ti based s uc u e
owa d hei modi ica ion wi h TNT laye s is a he
challenging as he high su ace a ea o be anodized inc eases
he chance o dielec ic b eakdown.
48,49
Fu he mo e, o he
comple e anodiza ion, he 3D s uc u e mus be ully inse ed
in o he elec oly e, while a connec ion o he po en ios a
mus be es ablished. This is almos impossible in he case o
sphe es o o he solid s uc u es. In he case o meshes o
hollow s uc u es, a connec ion consis ing o a hin Ti wi e
(o he ma e ials would con amina e he elec oly e by he
elease o o he me al ions du ing anodiza ion) would
heo e ically be possible. Howe e , such a hin connec ion
would also be e y p one o dielec ic b eakdown a he
elec oly e/ai in e ace and is he e o e unsui able. Recen ly,
we demons a ed he possibili y o wi eless anodiza ion o Ti
sphe es and 3D p in ed Ti meshes o o e come hese
challenges.
25,29
Unde he egime o bipola elec ochemis y
wi h al e na ing po en ial, TNT laye s we e p oduced on he
whole su ace o he 3D s uc u es wi hou a connec ion o he
po en ios a due o he pola iza ion o he Ti subs a e in a
high elec ical ield be ween wo eede elec odes.
In he p esen wo k, 3D Ti−Nb meshes we e p epa ed o
he i s ime ia DIW using Ti−Nb powde mix u es wi h
nominal composi ions o Ti-1Nb, Ti-5Nb, and Ti-10Nb.
Subsequen ly, hese meshes we e anodized using bipola
elec ochemis y o g ow TNT laye s on hei su ace and
inally used o he pho oca aly ic deg ada ion o ace aldehyde
in a low- h ough gas phase eac o . The meshes had a
diame e o 20 mm and a heigh o 8 mm and consis ed o an
o hogonal Ca esian g id pa e n wi h a ilamen dis ance (i.e.,
po e size in he p in ing plane) o 857 ±26 μm esul ing in a
po osi y o 68 ±1%.
25
No s a is ically signi ican di e ences in
po e size and po osi y we e obse ed be ween he mesh
composi ions; he e o e, he o me alues co espond o
a e ages and s anda d de ia ions o all meshes p oduced. The
e ec i e su ace a ea o each mesh was calcula ed o ∼61 cm2
(equi alen o 2.4 mm2/mm3), gi ing a e y high su ace o
olume a io.
25
EDX analysis e ealed Nb con en s wi hin he
as-p epa ed 3D meshes be ween 60 and 80% o he nominal
composi ion (Table S1). Figu e S1 shows he SEM images o
he as-p epa ed 3D meshes, e ealing ha Ti and Nb powde s
unde wen in e di usion du ing sin e ing, densi ying he
ilamen s while o ming he bina y TiNb alloy. The p oduced
meshes o all subs a es possess ough su aces and la ge g ains.
The e a e globula pa icles disce nible on he su ace, oge he
wi h s a i ica ions, ha s em om he su ace mass anspo
du ing sin e ing. The high oughness o he 3D Ti meshes was
al eady shown in ou p e ious wo k.
25
Fu he mo e, he TiNb
meshes had a biphasic lamella mic os uc u e o be a- (β-)
and alpha- (α-) Ti, wi h he numbe and hickness o β-Ti
lamellas (solid solu ion o Nb in Ti) inc easing wi h he
inc emen o Nb in he alloy, while, in con as , he e e ence
pu e Ti mesh had a monophasic mic os uc u e o equiaxed α-
Ti g ains (Figu e S1).
As his was he i s ime ha TiNb alloys we e p epa ed ia
DIW, he s ess−s ain esponse o he p in ed alloys was
in es iga ed. As one can see in Figu e S2, he inco po a ion o
Nb in o he Ti meshes oughly doubled he comp essi e
s eng h o he 3D meshes o all h ee Nb con en s. The
e ec i e elas ic modulus, on he o he hand, inc eased
mono onically wi h he Nb con en , meaning ha he 3D
meshes become s i e wi h he addi ion o Nb. The 3D Ti and
Ti-10Nb meshes showed an ab up d op in s ess and a quasi-
b i le ac u e soon a e he elas ic egime. In con as , he 3D
Ti-1Nb and Ti-5Nb meshes showed a se a ed and slow
decline in s ess a e he maximum s eng h due o mesh
densi ica ion allowed by he duc ili y o he alloys. The e o e,
he inco po a ion o Nb inc eases he duc ili y o Ti, bu
excessi e o ma ion o β-Ti lamellas educes he duc ili y
wi hou he educ ion o he comp essi e s eng h. Gene ally,
all p epa ed 3D meshes we e mechanically obus and allowed
o he low o luids wi hou s uc u al damage, showing hei
po en ial applica ion in sel -suppo ed low- h ough sys ems.
Be o e u he use, he 3D meshes we e cha ac e ized by
using X- ay di ac ion (XRD). Figu e 1A depic s he XRD
pa e ns o all 3D meshes. 3D Ti and Ti-1Nb meshes show
pu ely α-Ti peaks (PDF 00-005-0682), while β-Ti peaks (PDF
03-065-5970) we e ound o 3D Ti-5Nb and Ti-10Nb
meshes. Rie eld e inemen was used o calcula e he phase
ac ions o β-Ti o 9.0 and 22.9% o he Ti-5Nb and Ti-10Nb
meshes. The Nb con en was oo low o be de ec ed using
XRD. Mo eo e , he measu emen s show ha he 3D meshes
we e no isibly con amina ed wi h o he me als.
The 3D meshes we e u he wi elessly anodized owa d
TNT laye s in an e hylene glycol-based elec oly e con aining
170 mM NH4F and 1.5 ol % H2O using a bipola
elec ochemical se up.
25
A e wa d, he 3D meshes we e
annealed a 400 °C o 1 h o con e p oduced amo phous
TNT laye s in o he TiO2ana ase phase. XRD pa e ns a e
anodiza ion and annealing a e shown in Figu e 1B and e eal
addi ionally α-Ti and β-Ti peaks, s emming om he
unde lying 3D meshes, TiO2ana ase peaks (PDF 01-076-
8999) wi h he main peak a 2θ= 24.95°co esponding o he
(101) o ien a ion.
Nb2O5was no obse ed wi hin he anodized 3D meshes.
This is no anyhow su p ising, as i was shown in he li e a u e
ha e en XRD pa e ns o anodized Ti-45Nb alloys annealed
a 450 °C did no show any Nb2O5peaks, al hough he Nb
con en was signi ican ly highe as he ein.
13
Jus a e annealing
a 650 °C, a e y small Nb2O5peak was de ec ed in he
men ioned s udy.
13
Howe e , in Figu e 1B, a sligh shi o he ana ase (101)
peak a 2θ∼25° o lowe 2θ alues can be obse ed o he 3D
TiNb meshes compa ed o ha o he pu e 3D Ti meshes. Fo
cla i y, Figu e 1C shows a magni ica ion o he peak. The
eason o his peak shi is he simila a omic adius o Ti4+
and Nb5+ (i.e., 0.605 Å s 0.64 Å), which esul s in an easy
eplacemen o Ti4+ wi h Nb5+ species in he la ice. This
inc eases he la ice spacing and dec eases he di ac ion peak
posi ion. Thus, he di ac ion peak shi sugges s a doping o
Nb5+ in o he ana ase la ice.
19
The su ace chemical composi ion o he anodized 3D
meshes was e alua ed by using X- ay pho oelec on spec os-
copy (XPS). The su ey spec a o all ou employed 3D
meshes a e shown in Figu e 2A. In all TNT laye s, he
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p esence o Ti, O, and C was de ec ed; howe e , Nb was no
ound, likely because i has leached ou om he uppe mos
su ace o he nano ube laye (due o dissolu ion in o he
elec oly e). Figu e 2B and 2C show he Ti 2p and O 1s high-
esolu ion (HR) spec a o all 3D meshes, espec i ely. The Ti
2p egion is well-de ined o he TNT laye s on all 3D meshes
and p esen ed cha ac e is ic spin−o bi componen s obse ed
a o 458.6 eV (Ti 2p3/2) and 464.3 eV (Ti 2p1/2), esul ing in
he componen s ene gy sepa a ion (Δ) o 5.7 eV. The e o e,
he Ti 2p spec a ea u es indica e he p esence o he Ti4+−O
Figu e 1. XRD pa e ns o A) as-p epa ed and B) TNT laye modi ied
3D Ti and TiNb alloy meshes. C) The shi o he ana ase peak o
he anodized 3D meshes. Ti = α- i anium, β-Ti = β- i anium, A =
TiO2ana ase. Figu e 2. XPS spec a o he Ti and TiNb alloy 3D meshes: A) su ey
spec a, B) high- esolu ion Ti 2p spec a, and C) high- esolu ion O 1s
spec a.
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bond in TiO2.
50,51
A he same ime, he O 1s peak o he
analyzed TNT laye s shows wo con ibu ions cen e ed a
529.9 and 531.3 eV. These peaks can be a ibu ed o he
bonds o i anium oxygen (Ti−O)
50,51
and hyd ogen−oxygen
(Ti−OH),
51−53
espec i ely. No bonds a ibu ed o o he
compounds we e de ec ed. The a omic concen a ions o Ti,
O, and C we e calcula ed om he HR spec a and a e gi en in
Table S2. The s oichiome y was calcula ed om he
concen a ions o Ti and O o all ou 3D meshes, esul ing
in O:Ti a ios o 2.17, 2.19, 2.2, and 2.27 o he 3D Ti, Ti-
1Nb, Ti-5Nb, and Ti-10Nb meshes, espec i ely. This sugges s
he possibili y o an inc eased Nb concen a ion wi hin he
TNT laye s o med on Ti-10Nb compa ed o ha on Ti-1Nb
and Ti-5Nb.
To ge mo e insigh s in o he Nb con en , ex ensi e TEM/
HRTEM/STEM/EDX analyses we e ca ied ou on he
nano ubes g own on he 3D Ti-1Nb and Ti-10Nb meshes,
as shown in Figu e S4. As one can see, Nb was ound in
nano ubes g own on bo h meshes, wi h a signi ican ly lowe
amoun o Nb in he nano ubes g own on he Ti-1Nb mesh.
Howe e , i mus be no ed ha Nb was jus ound in nano ube
agmen s wi h hick walls, s emming om he bo om o he
o iginal nano ubes, bu no in nano ubes wi h hin walls om
he ops. This con i ms he assump ion ha he Nb is leached
ou on he nano ube ops due o hea y e ching.
SEM op- iew images shown in Figu e 3 demons a e ha
TNT laye s we e indeed p oduced on all 3D meshes. The SEM
op iew images we e aken on he op o he ou e ilamen s o
he 3D meshes whe e he po en ial is he highes . An une en
po en ial dis ibu ion along he 3D meshes, due o he
con enien use o bipola elec ochemis y o anodiza ion,
esul s in TNTs wi h a g adien in diame e and hickness om
he ou e pa s owa d he middle o he meshes.
25,29,54,55
The
diame e s o he TNTs on he ou e mos ilamen s we e
measu ed o be 84.7 ±9.1, 57.5 ±7.0, 89.8 ±20.5, and 78.9 ±
13.4 nm o he 3D Ti, Ti-1Nb, Ti-5Nb, and Ti-10Nb meshes,
espec i ely. I mus be no ed he e ha on su aces o all 3D
meshes la ge amoun s o nanog ass we e ound,
56
as shown in
Figu e S3 o an anodized 3D Ti-5Nb mesh. This nanog ass
s ems om an e ching o he TNT su ace du ing he
anodiza ion p ocess in s ong elec oly es (i.e., high F-
con en ), a high po en ials ( esul ing in high cu en
densi ies), and du ing long anodiza ion imes, leading o a
hinning and pa ial disin eg a ion o he TNT walls. Majo
pa s o his nanog ass can be emo ed by p olonged
sonica ion o he 3D meshes in isop opanol a e anodiza ion;
howe e , some emnan s s ay on he TNT su ace.
Thickness measu emen s o he TNT laye s we e ca ied ou
on SEM c oss-sec ional images p epa ed by ca e ully sc a ching
TNT laye s om he 3D meshes o ca bon ape loca ed on
SEM s ubs. The hickness o he TNT laye s a ied
signi ican ly on all di e en 3D meshes, anging on each
indi idual mesh om ∼1.5 o ∼7μm. The eason o his is 2-
old: (i) due o he s ong e ching o he TNT laye su ace
and he o ma ion o nanog ass, some pa s o he TNT laye s
we e signi ican ly sho ened compa ed o o he s, and (ii) due
o he use o bipola elec ochemis y, e e y cu ed ilamen
unde wen locally di e en po en ials on di e en pa s
depending on he posi ion owa d he eede elec odes.
Howe e , as on 3D Ti and TiNb meshes o all composi ions,
TNT laye hicknesses in he same ange we e ound, i is
expec ed ha he TNT laye s g ow equally and in he same
hickness on 3D meshes wi h all s udied composi ions (Figu e
3).
The anodized and annealed 3D meshes we e u he used o
gas-phase pho oca alysis using ace aldehyde as a model
pollu an , p o ing he 3D meshes as sel -suppo ed and high-
pe o mance pho oca aly ic subs a es. A scheme o he eac o
used, buil acco ding o ISO s anda ds (ISO 22197-2), is
shown in Figu e S5. I consis ed o a qua z glass ube wi h an
inne diame e o 22 mm, in which six 3D meshes we e
s acked, su ounded by 12 UV lamps (8 W each, λmax = 365
nm). Ace aldehyde was mixed wi h syn he ic ai wi h 50%
humidi y o a concen a ion o 5 ppm. A e a s able
concen a ion was eached, he gas low was di ec ed h ough
he eac o in he da k. The UV ligh was u ned on a e 40
min, when an adso p ion equilib ium was eached, o induce
he pho oca aly ic deg ada ion o ace aldehyde.
As a i s s ep, he op imal low a e o ace aldehyde h ough
he eac o was de e mined using anodized 3D Ti meshes as
pho oca alys . The dependency o he ace aldehyde con e sion
and mine aliza ion ( ull deg ada ion o ace aldehyde o CO2,
ollowing eq 1
57
) a e depic ed in Figu e 4 and Figu e S6.
2CH CHO 5O 4CO 4H O
h
3 2 2 2
+ +
(1)
As one can see om Figu e 4, he highes con e sion and
mine aliza ion alues o ∼97 and ∼86%, espec i ely, we e
ob ained o he slowes low a e o 0.5 l/min due o a long
esidence ime o ace aldehyde wi hin he eac o , allowing an
in ensi e con ac wi h he 3D Ti mesh pho oca alys , while o
he highes es ed low a e o 6 l/min con e sion and
mine aliza ion d opped o ∼40 and ∼27%, espec i ely. Fo
u he measu emen s, a low a e o 4 l/min was chosen wi h a
con e sion o ∼50% o obse e di e ences in con e sion and
mine aliza ion o he 3D meshes o di e en composi ion.
Figu e 5 shows con e sion and mine aliza ion o ace alde-
hyde o all anodized 3D meshes (including pu e 3D Ti
meshes). The highes con e sion and mine aliza ion o
ace aldehyde was ecei ed o 3D Ti-1Nb alloy meshes wi h
a con e sion o ∼56% and a mine aliza ion o ∼36%. The 3D
Ti and Ti-5Nb meshes bo h showed a con e sion o ∼50% and
a mine aliza ion o 36% and 30%, espec i ely, while he 3D
Ti-10Nb meshes showed he lowes con e sion and mine al-
iza ion wi h ∼33% and 19%, espec i ely. The inc ease o he
pho oca aly ic ac i i y o he anodized 3D Ti-1Nb meshes
Figu e 3. SEM op- iew images o TNT laye s p epa ed on 3D A) Ti,
B) Ti-1Nb, C) Ti-5Nb, and D) Ti-10Nb meshes.
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compa ed o he 3D Ti meshes can be explained wi h he Nb
doping o he TNTs and an in oduc ion o de ec s in o he
TNT c ys alline la ice by a educ ion o Ti4+ o Ti3+.
2,9
Howe e , i he Nb con en wi hin he TNTs inc eased, he
su ace s a es induced by Nb migh also ac as ecombina ion
cen e s o elec on−hole pai s.
58,59
The e o e, 3D Ti-5Nb and
Ti-10Nb meshes a e less a o able o he pho oca aly ic
deg ada ion o ace aldehyde.
Fo compa ison, nonanodized, annealed 3D meshes, i.e., 3D
meshes co e ed wi h a hin he mal TiO2laye , bu wi hou
TNT laye s, we e also in es iga ed as pho oca alys s o he
pho oca aly ic deg ada ion o ace aldehyde. The esul s a e
shown in Figu e S7. In ac , no con e sion o he ace aldehyde
was obse ed. This can be explained wi h he signi ican ly
smalle su ace a ea o he 3D meshes wi hou TNT laye s
compa ed o hei TNT laye modi ied coun e pa s, showing
ha he la ge su ace a ea o he TNT laye s is o pa amoun
impo ance o he pho oca aly ic deg ada ion o pollu an s in
gas phase low- h ough eac o s.
In summa y, he use o DIW o p oduce mechanically obus
3D Ti and TiNb alloy meshes sui able o sel -suppo ing low-
h ough ca aly ic sys ems was shown o he i s ime. The
inco po a ion o Nb doubled he mechanical s eng h o he
3D meshes, while hei wi eless anodiza ion using bipola
elec ochemis y c ea ed a high su ace a ea and highly ac i e
nano ubula pho oca alys . The possible use o such TNT laye
modi ied 3D meshes in a low- h ough pho oca aly ic eac o
was p o en o he deg ada ion o ace aldehyde, showing he
g ea po en ial o he 3D meshes. Anodized 3D Ti-1Nb meshes
showed he highes pho oca aly ic ac i i y due o he educ ion
o he bandgap h ough he in oduc ion o de ec s in o he
TNT c ys alline la ice a a minimum o ma ion o elec on−
hole ecombina ion cen e s. The esul s p esen ed he ein
posi i ely show he possibili y o employing addi i e
manu ac u ing o building up obus 3D ne wo ks ha can
be used in low- h ough pho oca aly ic sys ems a e nano-
s uc u ing hei su aces.
Figu e 4. Dependency o ace aldehyde A) con e sion and B) mine aliza ion on he low a e o ace aldehyde h ough he eac o , using 3D Ti
meshes as pho oca alys .
Figu e 5. Pho oca aly ic changes in A) ace aldehyde concen a ion, B) CO2p oduc ion on 3D Ti and TiNb alloy meshes. C) The con e sion and
mine aliza ion in pe cen . Flow a e 4 l/min.
Nano Le e s pubs.acs.o g/NanoLe Le e
h ps://doi.o g/10.1021/acs.nanole .3c01149
Nano Le . 2023, 23, 6406−6413
6410
■ASSOCIATED CONTENT
*
sı Suppo ing In o ma ion
The Suppo ing In o ma ion is a ailable ee o cha ge a
h ps://pubs.acs.o g/doi/10.1021/acs.nanole .3c01149.
Me hods, EDX measu emen s, a omic concen a ion
deduced by XPS, SEM images o nonanodized 3D
meshes, mechanical pe o mance o he 3D meshes,
addi ional SEM images o he anodized 3D Ti-5Nb
mesh, scheme o he gas phase pho oca aly ic eac o ,
pho oca aly ic deg ada ion and mine aliza ion o ace-
aldehyde using 3D Ti meshes as pho oca alys o
di e en low a es o ace aldehyde, pho oca aly ic
deg ada ion and mine aliza ion o ace aldehyde on
annealed 3D Ti and TiNb alloy meshes wi hou TNT
laye s (PDF)
■AUTHOR INFORMATION
Co esponding Au ho
Jan M. Macak −Cen e o Ma e ials and Nano echnologies,
Facul y o Chemical Technology, Uni e si y o Pa dubice,
53002 Pa dubice, Czech Republic; Cen al Eu opean
Ins i u e o Technology, B no Uni e si y o Technology, 612
00 B no, Czech Republic; o cid.o g/0000-0001-7091-
3022; Email: [email p o ec ed]
Au ho s
Hanna Sopha −Cen e o Ma e ials and Nano echnologies,
Facul y o Chemical Technology, Uni e si y o Pa dubice,
53002 Pa dubice, Czech Republic; Cen al Eu opean
Ins i u e o Technology, B no Uni e si y o Technology, 612
00 B no, Czech Republic; o cid.o g/0000-0001-7144-
5427
Adelia Kashimbe o a −Cen al Eu opean Ins i u e o
Technology, B no Uni e si y o Technology, 612 00 B no,
Czech Republic
Michal Baudys −Depa men o Ino ganic Technology,
Uni e si y o Chemis y and Technology P ague, 166 28
P ague, Czech Republic
Pa an Kuma Chennam −Cen al Eu opean Ins i u e o
Technology, B no Uni e si y o Technology, 612 00 B no,
Czech Republic; o cid.o g/0000-0002-3167-1996
Ma cela Sepul eda −Cen e o Ma e ials and
Nano echnologies, Facul y o Chemical Technology,
Uni e si y o Pa dubice, 53002 Pa dubice, Czech Republic;
o cid.o g/0000-0003-1847-9040
Jakub Rusek −Depa men o Ino ganic Technology,
Uni e si y o Chemis y and Technology P ague, 166 28
P ague, Czech Republic
E a Kolibalo a −Cen al Eu opean Ins i u e o Technology,
B no Uni e si y o Technology, 612 00 B no, Czech Republic
Ladisla Celko −Cen al Eu opean Ins i u e o Technology,
B no Uni e si y o Technology, 612 00 B no, Czech Republic
Edga B. Mon u a −Cen al Eu opean Ins i u e o
Technology, B no Uni e si y o Technology, 612 00 B no,
Czech Republic; o cid.o g/0000-0002-8122-4000
Jose K ysa −Depa men o Ino ganic Technology, Uni e si y
o Chemis y and Technology P ague, 166 28 P ague, Czech
Republic
Comple e con ac in o ma ion is a ailable a :
h ps://pubs.acs.o g/10.1021/acs.nanole .3c01149
Au ho Con ibu ions
H.S.: concep ualiza ion, TNT laye syn hesis, da a cu a ion,
scien i ic discussion, unding acquisi ion, supe ision, w i ing
he o iginal d a o he manusc ip , edi ing o he manusc ip .
A.K.: 3D Ti mesh design, DIW o 3D Ti meshes, XPS analysis,
scien i ic discussion. M.B.: Design o pho o eac o , pho o-
ca aly ic measu emen s, scien i ic discussion. P.K.C.: SEM
in es iga ion, XRD analysis. M.S.: TNT laye syn hesis. J.R.:
pho oca aly ic measu emen s. L.C.: sin e ing, scien i ic dis-
cussion, unding acquisi ion. E.B.M.: supe ision, scien i ic
discussion, unding acquisi ion, edi ing o he manusc ip . J.K.:
supe ision, concep ualiza ion, scien i ic discussion, unding
acquisi ion, edi ing o he manusc ip J.M.M.: supe ision,
concep ualiza ion, scien i ic discussion, edi ing o he manu-
sc ip , unding acquisi ion.The manusc ip was w i en h ough
con ibu ions o all au ho s. All au ho s ha e gi en app o al o
he inal e sion o he manusc ip .
No es
The au ho s decla e no compe ing inancial in e es .
■ACKNOWLEDGMENTS
The au ho s acknowledge he Minis y o Educa ion, You h
and Spo s o he Czech Republic o suppo ing CEMNAT
(LM2023037) and CEITEC Nano (LM2023051) in a-
s uc u es o p o iding SEM, EDX, XPS, TEM and XRD
accesses, while E.B.M. and L.C. hank o p ojec LTAIN19112
o inancial suppo o he 3D p in ing ca ied ou in his
wo k. J.K. and J.M.M. hank he Czech Science Founda ion o
p ojec 21-27243S, om which he pho oca aly ic measu e-
men s on la ge a ea subs a es we e ca ied ou . H.S. hanks he
Czech Science Founda ion o p ojec 23-06793S om which
he bipola anodiza ion o he TiNb meshes was ca ied ou .
A.K. acknowledges he B no Ph.D. Talen schola ship ounded
by he B no Ci y Municipali y. The au ho s hank D . S anisla
Slang o EDX measu emen s.
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