RESEARCH ARTICLE
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Multimode Emission in GaN Microdisk Lasers
Monty L. Drechsler,* Luca Sung-Min Choi, Farsane Tabataba-Vakili, Felix Nippert,
Aris Koulas-Simos, Michael Lorke, Stephan Reitzenstein, Blandine Alloing,
Philippe Boucaud, Markus R. Wagner, and Frank Jahnke
Quantum well nanolasers usually show single-mode lasing, as gain saturation
suppresses emissions in other modes. In contrast, for whispering gallery
mode microdisk lasers with GaN quantum wells as active material, above
threshold multimode laser emission is observed. This intriguing emission
feature is manifested in the fact that several modes simultaneously show the
characteristic kink in the input–output curve at the onset of lasing. A quantum
theory for nanolasers is used to support the experimental finding and to
analyze this behavior in the presence of gain saturation. Coupling effects
between neighboring modes are identified as the origin of multimode lasing,
which initiate photon exchange between modes via population pulsations
similar to classical wave-mixing effects. A reduction of this type of mode
coupling with increasing mode spacing is demonstrated. The results can pave
the way for multimode application of nanolasers in integrated
photonic circuits.
M. L. Drechsler, M. Lorke, F. Jahnke
Institute for Theoretical Physics
University of Bremen
Otto-Hahn-Allee 1, 28359 Bremen, Germany
E-mail: [email protected]
L.S.-M.Choi,F. Nippert, A. Koulas-Simos,S.Reitzenstein,M.R.Wagner
InstituteofSolidStatePhysics
Technische Universität Berlin
Hardenbergstr.36, 10623 Berlin, Germany
F. Tabataba-Vakili
Fakultät fürPhysik,MunichQuantumCenter, and CenterforNanoScience
(CeNS)
Ludwig-Maximilians-UniversitätMünchen
Geschwister-Scholl-Platz1,80539München,Germany
F. Tabataba-Vakili
MunichCenterforQuantumScienceandTechnology(MCQST)
Schellingtraße4,80799München,Germany
B.Alloing,P. Boucaud
UniversitéCôted’Azur, CNRS
CRHEA,rueBernardGrégory,Sophia-Antipolis06905,France
M.R.Wagner
Paul-Drude-InstitutfürFestkörperelektronik
Leibniz-InstitutimForschungsverbundBerline.V.
Hausvogteiplatz5-7,10117Berlin,Germany
The ORCID identification number(s) for the author(s) of this article
can be found under https://doi.org/10.1002/lpor.202400221
© 2024 The Authors. Laser & Photonics Reviews published by Wiley-VCH
GmbH. This is an open access article under the terms of the Creative
Commons Attribution License, which permits use, distribution and
reproduction in any medium, provided the original work is properly cited.
DOI: 10.1002/lpor.202400221
1. Introduction
Microdisk resonators are important
building blocks for integrated photonic
circuits.[1–3]Due to their large Q-factors
they can serve as a platform for coherent
light sources.[4,5]Multimode operation is
of particular interest, as it opens up the
prospect for communication over mul-
tiple channels in a single waveguide,[6,7]
as well as sensing applications.[8]The-
oretical understanding of multimode
operation provides the fundamentals
for on-chip mode division multiplexing
without a spatial multiplexer. Nanolasers
typically have a large free spectral range
(FSR) due to their small resonator di-
mensions, and therefore single-mode
lasing usually prevails.[9–11]This is in
particular the case for quantum well
(QW) lasers, where emission into the modes is provided by a
shared gain medium. Under steady-state conditions, stimulated
and spontaneous emission need to balance the cavity losses.
Above the laser threshold, this leads to gain saturation, which
favors stimulated emission for one mode with the highest modal
gain. The side-mode suppression through gain saturation of
the joint active material acts as a mode-coupling effect. Never-
theless, we observe multimode-lasing in GaN-based whispering
gallery mode (WGM) microdisk lasers with a large FSR of several
nanometers. Emergence of multimode lasing is well understood
in the framework of semiclassical theories. Population pulsations
with the beat frequencies between the modes lead to additional
mode coupling,[12]which results in light scattering between the
modes, analogous to non-degenerate four-wave mixing effects.
Laser emission from microdisk resonators has been success-
fully demonstrated in the visible or ultra-violet spectral range un-
der pulsed optical excitations using III-nitride heterostructures
and quantum wells as active regions.[13–17]Various microdisks
were obtained using techniques like photo-electro-chemical etch-
ing, sacrificial layers, underetching, electron-beam lithography,
nanosphere lithography in combination with different types
of substrates like sapphire or silicon. Single mode[13,14,16,18]or
multimode[15,17,19–23]lasing was reported in different types of mi-
crodisk lasers with various diameters. However, the nature and
mechanisms behind multimode lasing and the appropriate the-
ory and modeling to support experimental observations have re-
mained elusive.
In the WGM microdisk lasers studied in this article, sev-
eral resonator modes appear within the gain bandwidth of a
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Figure 1. a) Scanning electron micrograph of a III-nitride microdisk resonator. The III-nitride layers highlighted in false colors are epitaxially grown on
a silicon substrate. The layer stacking is indicated on the image. The 220 nm thick AlN layer appears in violet color at the bottom. b) μ-PL spectra of a
microdisk resonator with a diameter of 4 μm at different excitation powers. The zoomed inset shows a mode with a visible secondary feature.
multi-quantum well active medium. Light-scattering effects be-
tween the modes as a result of population pulsations compete
with gain saturation and lead to multimode stimulated emis-
sion. In our samples, a reduced mode volume (estimated as
15 ×(𝜆∕n)3following ref. [24]) together with the elevated Q-factor
of about 7000 alter the spontaneous emission into the laser mode
in comparison to the total spontaneous emission. In order to ad-
dress the influence of spontaneous emission and the mode cou-
pling due to wave-mixing effects, we use a quantum optical mul-
timode laser theory. In this article, we show that wave-mixing ef-
fects explain the occurrence of multimode lasing also in a quan-
tum optical laser theory. The strength of the wave-mixing effect
is discussed in terms of the FSR.
2. Results and Discussion
2.1. Fabrication of III-Nitride Microdisk Lasers
The investigated microlasers consist of mushroom-type mi-
crodisk resonators, which were fabricated from a sample grown
by metal organic chemical vapor deposition on a Si(111) sub-
strate. The structure is grown on the wurtzite c-axis and consists
of a 220 nm AlN buffer layer followed by a 520 nm thick GaN
layer and the optically active region. The active region consists
of five 3 nm thick In0.1Ga0.9N quantum wells separated by 7 nm
thick GaN barriers. The whole structure is terminated by a 20 nm
GaN cap layer. Figure 1ashows a false color scanning electron
microscope image of the processed microdisk. The fabrication
of the microdisks was achieved using standard cleanroom pro-
cessing. A SiO2hard mask was deposited on the wafer by plasma
enhanced chemical vapor deposition. A UV5 positive resist was
used to define the pattern of the microdisk resonators by electron-
beam lithography and the oxide layer was etched with reactive ion
etching using CH2F2and CF4gases. The III-nitride layers were
subsequently etched by inductively-coupled plasma dry etching
using Cl2and BCl3gases and the remaining SiO2was removed.
To achieve optical confinement and to avoid leaking of the modes
into the silicon, the substrate was partially underetched using
XeF2gas leading to a mushroom-type structure with a narrow
pedestal as shown in Figure 1a. Microdisks with diameters from
3to6μm were obtained, in which the WGMs are confined to the
periphery of the disks with slightly inclined sidewalls. Additional
information on the III-nitride material characterization can be
found in the Supporting Information of ref. [23].
2.2. Experimental Optical Spectroscopy of the Microdisks
The microdisk lasers of different diameter were examined us-
ing a micro-photoluminescence (μ-PL) setup. For excitation a
frequency-doubled Yb fiber laser, emitting pulses with a fre-
quency of 76 MHz, a wavelength of 515 nm and a pulse du-
ration of approx. 1.5 ps was used. The pulses were frequency
doubled again to reach 257 nm and focused onto the sample in
backscattering geometry. The collected photoluminescence was
guided into a 80 cm focal length Czerny-Turner monochromator
with a 1200mm−1grating providing a 0.03 nm spectral resolu-
tion and detected by a liquid-nitrogen cooled CCD. All measure-
ments were performed in a nitrogen atmosphere at room tem-
perature and the pressure was selected to minimize degradation
of the sample, presumably caused by laser-induced oxidation or
reduced thermal transport.[25–27]
Figure 1b depicts the power-dependent emission spectra for
a microdisk laser with a diameter of 4 μm, where the excita-
tion power ranges between 5 and 45 mW. Four distinct peaks
with a FSR splitting of 28.0±0.4meV clearly arise at 33±5mW
(≈100𝜇Jcm
−2per pulse threshold energy) due to the GaN-
quantum well emission coupling to the WGMs of the microdisk
resonator. The emission of all four modes is present even at
the highest excitation power of 45 mW, well above the thresh-
old pump power, thus exhibiting multimode laser operation. Ad-
ditionally, secondary features are evident next to the resonator’s
modes at high excitation powers, shown in the zoomed in-
set in Figure 1b and also in the measurements of ref. [23].
These originate from the lifting of the degeneracy between clock-
wise and counter-clockwise modes due to imperfections of the
resonator.[5,28,29]Lasing was independently verified by second-
order photon-autocorrection measurements at 5 K. At room tem-
perature, these measurements are not possible due to low signal
to noise ratio.
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Figure 2. Input-output characteristic of a In0.1Ga0.9N QW nanodisk laser with a diameter of 4 μm. Experimental results for the intensity (open circles)
are compared to calculations (solid lines) with (a) and without (b) wave mixing. The experimental intensities and pump rates are scaled with constant
factors for direct comparison with the theory. The gray line in (a) shows the background intensity. The insets in (a) and (b) show the calculated emission
spectrum of the laser evaluated at the pump rates marked with crosses.
The experimental results obtained from the 4 μm structure
were used as a basis for the development of a theoretical model
explaining the underlying mechanism leading to multimode
laser operation. From Figure 1b Q-factors up to approx. 7000
are deduced.
2.3. Theory-Experiment Comparison
For the WGM microdisk lasers discussed in this paper, Figure 2a
shows the intensities of the individual modes, as well as the total
output intensity as a function of the excitation power. The results
for the individual mode intensities (solid lines: theory, circles: ex-
periment) reveal a clear kink, which indicates the transition to
lasing for all four observed modes. Band filling leads to a small
shift of the gain maximum. As a result, the weighting of the in-
dividual modes changes with increasing excitation power toward
higher energies.
In the following, we investigate the influence of population
pulsations and the associated wave-mixing effects on the emis-
sions. For a calculation without wave mixing, Figure 2b, the total
intensity (black solid line) behaves similarly to the previous case.
The lasing threshold occurs at smaller pump rates because the
main mode (mode with the largest intensity, mode 3) has more
photons available and thus higher stimulated emission. For ex-
ample, a calculated total photon number of ten is reached for a
pump rate of 5.2×10−4ps−1with wave mixing and for a pump
rate of 4.9×10−4ps−1without wave mixing. In the absence of
wave mixing, the other modes do not show a transition to lasing,
as the corresponding kink is missing.
The behavior of the individual modes in the input-output char-
acteristics is also reflected in the calculated emission spectra,
which are provided as insets to Figure 2a,b. When the redistri-
bution of photons due to wave-mixing effect is included, a multi-
mode spectrum is obtained below and above the laser threshold.
If the wave-mixing effect is omitted, below threshold pumping
leads to an emission spectrum showing several modes. For above
threshold pumping, however, the mode with the highest modal
gain wins the mode competition and saturates the gain, thereby
suppressing emissions to the other modes.
In the wave-mixing process, two modes interact with the quan-
tum wells and generate pulsations in the electron population
with the difference frequency.[12]As a result, photons can be ex-
changed between the modes. The mode with the highest gain
scatters photons into other modes, thereby allowing them to pass
the laser threshold. This leads to an additional loss channel for
the main mode and the gain may exceed the resonator losses
for this mode. This increase in gain allows the side modes to
pass the laser threshold. Figure 3illustrates this phenomenon.
Below threshold, a multimode spectrum occurs as spontaneous
emission dominates, gain saturation is absent, and a weak wave-
mixing process is still present.
Figure 3. Schematic illustration of the relationship between gain satura-
tion and photon scattering due to wave mixing. The vertical dotted lines
mark the spectral positions of the resonator modes. The orange line shows
the gain due to stimulated emission and without wave-mixing contribu-
tions, which is saturated in such a way that stimulated and spontaneous
emission compensate the resonator losses. Due to redistribution of pho-
tons by wave mixing, the gain can exceed the resonator losses (green
dashed line) as it exhibits additional losses in the total balance.
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Figure 4. Intensities of the individual modes relative to the intensity of the main mode (mode with the largest intensity) as a function of the FSR, above
(a) and below (b) the laser threshold. The red dashed lines are exponential fits.
2.4. Mode Coupling Efficiency
The described effects of mode coupling, i.e., the gain satura-
tion of the common active material by the strongest mode and
the scattering of photons between the modes, are in them-
selves generic effects. In addition to the nitride-QW-based WGM
microdisk lasers studied here, multimode lasing has been re-
ported in microdisk resonators incorporating arsenide-QWs,[30]
phosphide-QWs,[31]and even perovskites.[32]Multimode lasing
was also observed in microdisk resonators with quantum dots
as the active medium.[28,33,34]In this case, however, multimode
operation occurs due to the inhomogeneous broadening of the
discrete emitter ensemble, such that each mode only saturates
the respective quantum dots in close spectral vicinity. For a large
FSR, each laser mode is supported by a separate set of quantum
dots and the gain saturation of one mode has no influence on the
other modes. We exclude QD-like states due to disorder-induced
localization in the used sample. Local fluctuations induced by in-
dium, with a potential in the tens of meV range, are screened
under high carrier injection, resulting in delocalized charge car-
riers at room temperature.[35]
For the mode coupling due to photon scattering between the
modes, the FSR in relation to the gain bandwidth plays a cen-
tral role, indirectly also the strength of scattering and dephasing
processes. This ultimately makes the processes dependent on the
material system and resonator type and lastly dependent on the
strength of gain saturation versus population pulsations.
To investigate the efficiency of mode coupling, we examine the
dependence of the emission spectrum on the FSR. Figure 4pro-
vides the intensities of the individual modes relative to the main
mode. The relative intensities decrease exponentially with the
FSR (red dashed fits in Figure 4). Thus, multimode lasing is less
apparent for a larger FSR and photon scattering is less efficient.
Below the laser threshold, emission into several modes is sup-
ported even with a larger FSR as there is no gain saturation, while
the photon scattering remains present albeit at weaker efficiency.
The photon scattering between the modes is represented by
processes in which a photon is added into one mode qwhile
being removed from another mode q′. This can be expressed
in terms of photon creation and annihilation operators, b†
qand
bq′, respectively. The corresponding expectation values ⟨b†
qbq′⟩
with q≠q′are the off-diagonal photon density matrix elements.
These transition amplitudes quantify the efficiency of photon
scattering between the modes and are a central part of the used
quantum optical multi-mode laser theory. Their calculation is
outlined in Section 4. The relative coupling strength (normalized
to the square root of the respective photon numbers)
|⟨b†
qbq′⟩|
√⟨b†
qbq⟩⟨b†
q′bq′⟩
(1)
between modes two and three and the largest pump rate in
Figure 2a has a value of 15%, which emphasizes the magnitude
of the process.
3. Conclusion
High Q-factor WGM microdisk resonators with InGaN quantum
wells as active material have been used to demonstrate multi-
mode laser operation. A direct analysis of the experimental re-
sults with a semiconductor laser theory attributes the simultane-
ous occurrence of a threshold transition for several laser modes
to strong mode coupling effects. Quantum optical semiconductor
laser models using a quantization of the optical field play an im-
portant role in the analysis of emission properties when the tran-
sition from conventional lasers with low Q-factor and low sponta-
neous emission coupling to nanolasers is performed. While mul-
timode lasing was observed in our present and some previous ex-
periments, quantum optical semiconductor models have focused
on treatments with a single laser mode. In this paper we provide
the necessary extension to a multi-mode semiconductor theory
by including off-diagonal photon density matrix elements. The
resulting mode coupling effects turn out to be of strong magni-
tude and enable multi-mode operation despite the fact that all
modes use a common quantum well gain medium and gain sat-
uration is present.
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4. Quantum Optical Multimode Laser Theory
Starting from the Lindblad-von-Neumann equation, the equa-
tions of motion were derived for relevant expectation val-
ues like the mean photon number and first-order pho-
ton correlations defining the emission spectrum. The light-
matter interaction gives rise to a hierarchy of coupled equa-
tions, which was truncated at doublet level of the cluster-
expansion approximation.[36–38]Interaction of the light field
within a two-band model in effective-mass approximation
was treated for the In0.1Ga0.9N quantum well (QW) active
medium.
For the light-matter-coupling, a Jaynes-Cummings-type inter-
action was considered with several quantized resonator modes.
The system is described by the Hamiltonian
H=∑
k(𝜀e
ke†
kek+𝜀h
kh†
khk)+∑
q
ℏ𝜔qb†
qbq
+∑
k′,q′(gk′q′b†
q′hk′ek′+g∗
k′q′bq′e†
k′h†
k′)(2)
where ek(hk)and e†
k(h†
k)are annihilation and creation opera-
tors for conduction band electrons (valence band holes), bqand
b†
qare annihilation and creation operators of photons in the q-th
mode, respectively. krepresents the state described by wave vec-
tor
kand spin s. The energy of the electrons (holes) in state
kis denoted by 𝜀e
k(𝜀h
k),𝜔qis the frequency of the q-th cavity
mode, and gkq is the light-matter coupling strength between the
q-th mode and electrons (holes) in state k. The equations of mo-
tion for the photon numbers nq=⟨b†
qbq⟩, the electron occupa-
tions fe
k=⟨e†
kek⟩and the hole occupations fh
k=⟨h†
khk⟩are given
by
ℏd
dtnq=2∑
k
Re{−igkq ⟨b†
qhkek⟩}−2𝜅nq(3)
ℏd
dtfe∕h
k=−2∑
q
Re {−igkq ⟨b†
qhkek⟩}
−𝛾rel (fe∕h
k−Fe∕h
k(T))−𝛾r⟨e†
kh†
khkek⟩
+pk(1−fe
k−fh
k+⟨e†
kh†
khkek⟩)(4)
Resonator losses were taken into account with the photon decay
rate 𝜅, which was related to the Q-factor of the q-th resonater
mode Qq=ℏ𝜔q
2𝜅. The electrons were optically excited high into
the conduction band with the pump rate pk. A relaxation time ap-
proximation was used for the scattering of electrons (holes) with
rate 𝛾rel toward a Fermi-Dirac distribution Fe
k(T)(Fh
k(T))at lat-
tice temperature T. Emission in non-lasing modes was described
by loss rate 𝛾r. The corresponding modes were either strongly
detuned or have low Q-factors. The occupations nqand fe∕h
kare
driven by the photon-assisted polarization ⟨b†
qhkek⟩,whichobeys
the differential equation
ℏd
dt⟨b†
qhkek⟩=i∑
k′
g∗
k′q⟨e†
k′h†
k′hkek⟩+i(fe
k+fh
k−1)∑
q′
g∗
kq′⟨b†
qbq′⟩
−[iΔkq +𝜅+𝛾rel +Γ
El +Γ
Phot +pk+𝛾r
2]
⋅⟨b†
qhkek⟩(5)
where Δkq =𝜀e
k+𝜀h
k−ℏ𝜔qis the detuning of the mode qto
the electronic transition at k. Following the cluster-expansion
scheme, many-body correlations up to second order were ex-
plicitly included in the set of equations used here. On subse-
quent orders, electron–electron, electron–phonon, and higher-
order electron–photon correlations appear, which lead to de-
phasing contributions in the photon-assisted polarization, de-
scribed by Equation (5). As higher-order correlations were not
treated explicitly, their contributions were added as phenomeno-
logical dephasing constants. Here, ΓEl represents dephasing due
to electron-electron and electron–phonon contributions and ΓPhot
contains dephasing due to higher-order electron–photon correla-
tions. The k=k′contribution to ⟨e†
k′h†
k′hkek⟩in Equation (5)de-
scribes the spontaneous emission contribution due to recombi-
nation of an electron-hole pair with momentum k.Termswith
k≠k′were polarization-like quantities that account for spon-
taneous emission processes due to the coupling of different k-
states. The dynamics of these processes is given by the equation
ℏd
dt⟨e†
k′h†
k′hkek⟩=
⎧
⎪
⎪
⎪
⎪
⎪
⎪
⎨
⎪
⎪
⎪
⎪
⎪
⎪
⎩
−i∑
q[gk′q(fe
k′+fh
k′−1)⟨b†
qhkek⟩−g∗
kq (fe
k+fh
k−1)⟨bqe†
k′h†
k′⟩]
−[i(𝜀e
k+𝜀h
k−𝜀e
k′−𝜀h
k′)+2𝛾rel +𝛾r+pk+pk′
2+2ΓEl]⋅⟨e†
k′h†
k′hkek⟩
for k≠k′,
−2∑
q
Re{−igkq ⟨b†
qhkek⟩}−𝛾r⟨e†
kh†
khkek⟩
−2𝛾rel ⋅(⟨e†
kh†
khkek⟩−Fe
k(T)Fh
k(T))+pk(1−fe
k−fh
k+⟨e†
kh†
khkek⟩)for k=k′.
(6)
This expectation value was in turn driven by the photon-assisted
polarization ⟨b†
qhkek⟩. The second term in Equation (5) describes
the stimulated emission for q=q′and photon scattering for q≠
q′. To account for wave mixing, a separate equation is formulated:
ℏd
dt⟨b†
qbq′⟩=−i∑
k(gkq′⟨b†
qhkek⟩−g∗
kq ⟨bq′e†
kh†
k⟩)
−[i(ℏ𝜔q′−ℏ𝜔q)+2𝜅+2ΓPhot (1−𝛿q,q′)]⟨b†
qbq′⟩
(7)
Note that for q=q′the equation for the photon number, Equa-
tion (3), was recovered. For this case, the dephasing contribution
ΓPhot was omitted.
The Equations (3)–(7) form a closed set of self-consistent laser
equations, which could be used to determine the input–output
characteristics of the nanolasers. The description goes beyond
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Table 1. Set of parameters for modeling a In0.1Ga0.9N QW nanodisk laser.
m0denotes the mass of an electron. The effective masses are determined
from.[41]
𝜀g2967 meV
me0.17 ⋅m0
mh0.74 ⋅m0
ℏ𝜔12929 meV
ℏ𝜔22957 meV
ℏ𝜔32985 meV
ℏ𝜔43013 meV
g00.03 1
ps
A107nm2
𝛾rel 10 1
ps
T50 K
𝛾r0.055 1
ps
𝜅0.373 1
ps
ΓPhot 71
ps
ΓEl 10 1
ps
rate equations, since the polarizations, photon scattering and
couplings between different k-states were calculated in a phase
sensitive manner (all quantities oscillate with the corresponding
transition energy) according to the microscopic interaction pro-
cesses. An advantage of the approach was that it allowed to study
the influence of specific correlation between modes or different
k-states.
Furthermore, the theory provides access to the emission spec-
trum S(𝜔) via the first-order photon correlation function G(1)(t, 𝜏)
together with the Wiener-Khinchin theorem,[39]
S(𝜔)={G(1)(t, 𝜏)}with G(1)(t, 𝜏)
=ℏ
2𝜖0∑
q,q′√𝜔q𝜔q′u∗
q(
rD)uq′(
rD)⟨b†
q(t)bq′(t+𝜏)⟩(8)
where uq(
r) are the mode functions of the q-th mode and
rDde-
notes the position of the detector. Using the quantum regression
theorem,[40]equations of motion for the contributing correlation
functions are obtained
ℏd
d𝜏⟨b†
q(t)bq′(t+𝜏)⟩=−i∑
k
gkq′⟨b†
q(t)hkek(t+𝜏)⟩
−(iℏ𝜔q′+𝜅+Γ
Phot)⟨b†
q(t)bq′(t+𝜏)⟩(9)
ℏd
d𝜏⟨b†
q(t)hkek(t+𝜏)⟩=i(fe
k+fh
k−1)∑
q′
g∗
kq′⟨b†
q(t)bq′(t+𝜏)⟩
−[i(𝜀e
k+𝜀h
k)+Γ
El +𝛾rel +pk+𝛾r
2]
×⟨b†
q(t)hkek(t+𝜏)⟩(10)
The coupled set of Equations (3)–(7) together with Equations (8)–
(10) allowed to calculate the emission spectrum of nanolasers in
the presence of photon redistribution between different modes.
Table 1shows the parameters used for the calculation.
Acknowledgements
M.L.D., L.S.-M.C., and F.T.-V. contributed equally to this work. The Bremen
group acknowledges financial support from the Deutsche Forschungsge-
meinschaft (DFG) via project JA619/18-1 and a grant for CPU time at the
HLRN (Berlin/Göttingen). The microdisk fabrication was partly supported
by the French RENATECH network as well as by the French Agence Na-
tionale de la Recherche (ANR) under MILAGAN convention (No. ANR-
17-CE08-0043-02) and Labex GANEX (Grant no. 314 ANR-11-LABX-0014).
Support from the Comb-on-GaN convention of Labex GANEX is also ac-
knowledged. A.K-S. and S.R. acknowledge financial support from the DFG
via project Re2974/21-1.
Open access funding enabled and organized by Projekt DEAL.
Conflict of Interest
The authors declare no conflict of interest.
Data Availability Statement
The data that support the findings of this study are available from the cor-
responding author upon reasonable request.
Keywords
gallium-nitride, microdisk, microlasers, multimode, quantum-optical, the-
ory, whispering-gallery
Received: February 14, 2024
Revised: April 12, 2024
Published online: May 3, 2024
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