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7942 |Soft Matter, 2015, 11, 7942--7952 This journal is ©The Royal Society of Chemistry 2015
Cite this: Soft Matter, 2015,
11,7942
Calorimetric evidence for a mobile surface layer in
ultrathin polymeric films: poly(2-vinyl pyridine)
Sherif Madkour,
a
Huajie Yin,*
a
Marieke Fu
¨llbrandt
ab
and Andreas Scho
¨nhals*
a
Specific heat spectroscopy was used to study the dynamic glass transition of ultrathin poly(2-vinyl
pyridine) films (thicknesses: 405–10 nm). The amplitude and the phase angle of the differential voltage
were obtained as a measure of the complex heat capacity. In a traditional data analysis, the dynamic
glass transition temperature T
g
is estimated from the phase angle. These data showed no thickness
dependency on T
g
down to 22 nm (error of the measurement of 3 K). A derivative-based method was
established, evidencing a decrease in T
g
with decreasing thickness up to 7 K, which can be explained by
a surface layer. For ultrathin films, data showed broadening at the lower temperature side of the spectra,
supporting the existence of a surface layer. Finally, temperature dependence of the heat capacity in the
glassy and liquid states changes with film thickness, which can be considered as a confinement effect.
1. Introduction
The characterization of the glass transition temperature, T
g
,of
ultrathin polymer films has been of great interest due to their
numerous applications in fields like coatings, membranes, and
innovative organic electronics. Scientifically, ultrathin films
provide ideal sample geometry for studying the confinement
effects on the glass transition of polymers as film thicknesses
can be easily tuned by spin coating.
1
Generally, glass transition
is a topical problem of soft matter research (see for instance
ref. 2–7). Investigations on highly confined systems may help
to evidence the existing of a dynamical length scale
8
corres-
ponding to the glass transition, which is difficult to measure by
other approaches.
Since the pioneering work of Keddie et al.,
9,10
the thickness
dependence of the glass transition temperature has been con-
troversially discussed in literature. For the same polymer/
substrate systems, divergent results have been published. In a
recent perspective discussion by Ediger et al.,
11
the progress
made in the last years was discussed (see for instance ref. 12–20).
For polymers supported by a non-attractive substrate (see for
instance ref. 10, 15 and 21–27) a depression of the thermal glass
transition temperature T
g
with decreasing film thickness is
widely observed. This T
g
depression is discussed to originate
as a result of a free polymer/air surface having a higher
molecular mobility than the bulk due to missing polymer–polymer
segment interactions and also due to structural differences.
11,15
Recently, optical photobleaching experiments,
14,28
as well as
the embedding of gold nanospheres into a polymer surface,
29,30
provided some evidence for a highly mobile surface layer.
For polymers having a strong interaction with the substrate,
T
g
may increase with the reduction of the film thickness.
31–33
These experimental results were explained by the formation of
an adsorbed boundary layer, in which the polymer segments
have a lower molecular mobility; hence a higher glass transition
temperature.
34
For that reason, attempts are made to correlate
depression or increase of the glass transition temperature with
the interaction energy between the surface of the substrate and
the polymer g
SP
.
35
A depression of T
g
should be observed for
values of g
SP
smaller than a critical value g
c
, because the
influence of the mobile surface layer should be dominant in
this case. For g
SP
4g
c
the reduced mobility layer at the substrate
will dominate and an increase of T
g
should be expected. This
concept was critically considered by Tsui et al.,
36
with the
conclusion that the interaction energy between the polymer
segments and the surface of the substrate is not the only relevant
parameter. Also the packing of the segments at the interface
might play a role. In general, no correlation between g
SP
and the
change of T
g
with the film thickness was found.
7
Nowadays,
there is growing consensus that the T
g
shifts observed in ultra-
thin films compared to the bulk are related to the combined
influence of the free surface (polymer–air) and the polymer–
substrate interfacial interaction.
11
Even though the free surface
is assumed to speed up the segmental dynamics, at tempera-
tures near T
g
, the effect of the polymer–substrate interaction can
either increase or decrease the dynamics, and consequently the
relaxation times of the adjacent polymer segments.
a
BAM Federal Institute for Materials Research and Testing, Unter den Eichen 87,
D-12200 Berlin, Germany. E-mail: andreas.Scho[email protected];
Fax: +49-30-8104-1617; Tel: +49-30-8104-3384
b
Stranski-Laboratorium fu
¨r Physikalische und Theoretische Chemie/Institut fu
¨r
Chemie, Technische Universita
¨t Berlin, Straße des 17. Juni 124, 10623 Berlin,
Germany
Received 24th June 2015,
Accepted 26th August 2015
DOI: 10.1039/c5sm01558h
www.rsc.org/softmatter
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Generally, there are two different experimental approaches
to investigate the glass transition of ultrathin polymer films. In
the first approach (also called static experiments), the tempera-
ture is ramped and a thermodynamic property (or an associated
quantity) is measured. A change in the temperature depen-
dence of this quantity is interpreted as thermal glass transition,
where a corresponding thermal glass transition temperature
(T
g
) can be extracted. Examples for these methods are ellipso-
metry,
10,15
DSC
43
or Flash DSC,
26
fluorescence spectroscopy,
37
dielectric expansion dilatometry,
22,23,32
or X-ray reflectivity,
38
just to mention a few. In the second approach, techniques that
directly explore the segmental mobility, like dielectric (see for
instance ref. 19, 32 and 33) or specific heat spectroscopy
19,39–42
have been employed. In these cases, a dynamic glass transition
temperature is measured which is higher than the thermal one.
So far, all investigations carried out by specific heat spectro-
scopy did not show a thickness dependence of the dynamic
glass transition temperature, even in cases where simultaneous
dilatometric experiments evidenced a decrease of the thermal
glass transition temperature.
43
A possible reason for that is
discussed in ref. 11. Moreover by employing cooling rate depen-
dent experiments like ellipsometric,
23,25
photobleaching
14
or
Flash DSC
26
experiments it was evidenced that there is a limiting
cooling rate for the depression of the thermal T
g
. For instance,
for polystyrene the value of this limiting cooling rate was found
to be higher than 90 K min
1
.
25
This study focuses on the investigation of the dynamic glass
transition of thin films of poly(2-vinyl pyridine) (P2VP), as
contradicting results exist in the literature. In an X-ray reflec-
tivity study of P2VP films on acid cleaned SiO
2
surface, the
thermal glass transition temperature T
g
increases with decreas-
ing film thickness up to 20–50 K compared to the bulk value.
38
These results are also consistent with more recent data
44,45
and
were explained assuming strong interactions of the polymer
segments with surface of the substrates. Moreover, a similar
behavior was observed for thin P2VP films capped between
aluminum layers in a dielectric study.
46
Moll and Kumar found
only a small shift in T
g
for P2VP/ silica nanocomposites.
47
Holt
et al.
48
report also a study on P2VP filled with silica nano-
particles. An adsorbed boundary layer around the nanoparticles
with a thickness of ca. 4 nm was found having a two-order of
magnitude reduced mobility compared to the bulk P2VP, hence
a higher glass transition temperature consistent with findings
discussed above. A similar result was reported for poly(vinyl
acetate) filled with silica nanoparticles.
49
These results are in
contradiction to an investigation of P2VP films spin coated on a
highly doped Si wafer by broadband dielectric spectroscopy
50
where the dynamic glass transition was found to be independent
of the film thickness. Also semi-isolated P2VP chains adsorbed
on a doped Si wafer seem to resemble bulk like dynamics.
20
These results are also consistent with data obtained by high
speed chip calorimetry where a thickness independent T
g
value
for ultrathin P2VP films was found.
51
Paeng et al. employed
photobleaching techniques to explore the dynamics of thin P2VP
films on the cleaned native surface of a SiO
2
wafer.
52
Ahighly
mobile surface layer at the polymer/air interface was evidenced.
However, indications for a reduced mobility layer at the surface
of the substrate were also reported.
Here specific heat spectroscopy is employed utilizing
AC-chip calorimetry
39
to investigate the dynamic glass transi-
tion of thin P2VP films. These measurements are accompanied
by contact angle measurements in order to quantify the inter-
action of the P2VP segment with a SiO
2
surface used as
substrate. Additionally, broadband dielectric spectroscopy is
used to measure the molecular dynamics of the bulk material
for comparison.
2. Experimental section
2.1. Methods
Specific heat spectroscopy. Specific heat spectroscopy is
employed using differential AC-chip calorimetry.
39
The calori-
metric chip XEN 39390 (Xensor Integration, NL) was used as
measuring cell. The heater is located in the center of a free-
standing thin silicon nitride membrane (thickness 1 mm)
supported by a Si-frame with a window. This nanocalorimeter
chip has a theoretical heated hot spot area of about 30 30 mm
2
,
with an integrated 6-couple thermopiles and two-four-wire heaters
(biasandguardheater),asshowninref.53.Pleasenotethatin
addition to the 30 30 mm
2
hot spot, the heater strips also
contribute to the heated area. A SiO
2
layer with a thickness of
0.5–1 mm protects the heaters and thermopiles. The thin films
are spin coated over the whole chip area, but only the small
heated area was sensed and considered as a point heat source.
Pictures of the sensor can be found in ref. 41.
In principle the chip itself will contribute to the measured
heat capacity. In the differential approach to AC-chip calori-
metry, the contribution of the heat capacity of the empty sensor
(without a sample) to the measured signal is minimized. In the
approximation of thin films (submicron), the heat capacity of
the sample C
S
is then given by
39,40
CS¼io
C2DUDU0
ðÞ
SP0
(1)
where ois the angular frequency and i=(1)
1/2
the imaginary
unit.
CC
0
+G/iodescribes the effective heat capacity of the
empty sensor (C
0
heat capacity of the sensor; G/iois the heat
loss through the surrounding atmosphere), Sis the sensitivity
of the thermopile, P
0
is the applied heating power, and DUis
the complex differential thermopile signal for an empty refer-
ence sensor and a chip with a sample, where DU
0
is the complex
differential voltage measured for two empty sensors. A more
detailed description of the calorimetric chip, its differential
setup and the experimental method can be found in ref. 39.
Absolute values of the heat capacity can be obtained by calibra-
tion procedures.
40
For the calorimetric measurement, the temperature scan
mode was used. The temperature was scanned using a heat-
ing/cooling rate of 2.0 K min
1
at fixed frequency. After
each heating/cooling run the frequency was changed stepwise
in the range of 1 Hz to 10
4
Hz. The selected scanning rate
and the used frequency range ensure stationary conditions for
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the measurement.
54
The heating power for the modulation
waskeptconstantatabout25mW, which ensures that the
amplitude of the temperature modulation is less than 0.5 K
39
and so a linear regime. It is important to note that the
measurements are carried out in the frame of the linear
response theory. The estimated glass transition temperatures
are dynamic glass transition temperatures and are taken in
the equilibrium state. As discussed in detail in the introduc-
tion this is different from the temperature ramping experi-
ments carried out in DSC,
43
Flash DSC
26
or ellipsometric
studies.
23,25
The PT-100 of the cryostat was calibrated by measuring
phase transition temperatures for five different calibration
substances, covering the whole temperature range of the
calorimeter (173–573 K). The calibration equation obtained
was then used to correct the collected temperature data.
55
Contact angle measurements. The measurements were
carried out using the automated contact angle system G2 (Kru
¨ss)
employing the static sessile drop method. The used test liquids
were ethylene glycol, formamide, water and diiodomethane.
Usually, 8 drops with a volume of 3 ml were dropped onto the
surface of a thick sample film treated in a similar way as the
thin layers. The mean contact angles were calculated from
the average of at least 6 drops. The data for SiO
2
were taken
from ref. 41.
Broadband dielectric spectroscopy. For comparison, the
dielectric properties of a bulk sample (50 mm) were measured
by a high resolution Alpha analyzer with an active sample head
(Novocontrol GmbH). The temperature was controlled by a
Quatro cryosystem with a stability of 0.1 K. The sample for
the dielectric measurements was obtained by melting P2VP
between two gold plated brass electrodes (diameter 20 mm).
Fused silica spacers controlled its thickness to be 50 mm.
2.2. Materials and sample preparation
P2VP was purchased from Polymer Standards Services GmbH
(Mainz, Germany) with a M
w
of 1020 kg mol
1
and a PDI of
1.33. The thermal glass transition temperature is 373 K esti-
mated by Differential Scanning Calorimetry (DSC, 10 K min
1
,
second heating run). The selected polymer here is similar
to the material used in ref. 20 and allows therefore a direct
comparison of the dielectric data. For the AC-chip calori-
metry, the sensors were first mounted on the spincoater, a
few drops of chloroform were added in the center, and then
spin coated to rinse dust and organic contaminations. This
procedure was repeated twice, followed by an annealing process
of the empty chip at 473 K in vacuum for two hours to cure the
epoxy resin completely, which is used to glue the chip to the
housing.
P2VP was dissolved in chloroform with different weight
percentages. The solutions were spincoated (3000 rpm, 60 s)
onto the central part of the sensors. The film thickness was
varied by adjusting the concentration of the solution. Note that
all spin coating processes were carried out in a laminar flow box
to minimize any possible contamination. Further, the films
were annealed at 398 K (T
ann
=T
g,Bulk
+ 25 K) in an oil-free
vacuum for 48 h, in order to remove the residual solvent and
relax the stress induced by the spin coating procedure.
56
The thicknesses were measured for films identically pre-
pared on silicon wafers with a native SiO
2
surface, because the
film thicknesses cannot be directly measured at the sensor.
Assuming that the surface of the silicon wafer has similar
properties as the surface of the sensor, under identical spin
coating and annealing conditions, corresponding film thick-
nesses will be obtained. To proof this assumption in more
detail a XPS study is in preparation. The film thickness dwas
measured by the step height of a scratch across the film down
to the wafer surface by an AFM Nanopics 2100 (see Fig. 1).
Fig. 2 gives the estimated film thicknesses versus the concen-
tration of the solution. A linear dependence is observed, which
goes to the point of origin as expected.
Moreover, the AFM topography image (Fig. 1) reveals no
inhomogeneities and/or dewetting at the surface of the films.
Also, a low surface roughness is observed. The root mean
square (rms) roughness in the central area of the empty sensor
was estimated to be about 3.5 nm.
40
The roughness of the film
spin coated onto the surface of the sensor is lower and
decreases with increasing film thickness. For a film thickness
of ca. 10 nm, the roughness of the film on the sensor is
comparable with that of a film prepared on a wafer.
57
Fig. 1 AFM image of a scratch across a P2VP layer with a thickness of
50 nm on a silicon wafer.
Fig. 2 Estimated film thickness d versus the concentration of the solution.
The solid line is a linear regression to the data. The error bar is smaller than
symbols used.
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3. Results and discussion
The result of an AC calorimetry measurement yields a complex
differential voltage as a function of frequency and temperature,
which is proportional to the complex heat capacity (C
P
*) of the
film. Here the real part of the complex differential voltage U
R
and the phase angle fare taken as measures of C
P
*. At the
dynamic glass transition, U
R
increases stepwise with increasing
temperature (Fig. 3a) and fshows a peak (Fig. 3b).
A dynamic glass transition temperature can be determined
as either the half step temperature of U
R
or as the maximum
temperature of the peak of the corrected phase angle. In the
raw data of the phase angle (Fig. 3b, upper panel), there is an
underlying step in the signal, which is proportional to the real
part. Hence, the phase angle is corrected by subtracting this
contribution. According to eqn (1) and assuming that the
density of the film is the same as in the bulk, the step high
of the heat capacity at the glass transition is given by
40
CS;Liquid CS;Glass ¼io
C2UR;Liquid UR;Glass

SP0
md(2)
where mis the mass of the film. Therefore, U
R,Liquid
U
R,Glass
=
DU
R
should be proportional to the thickness of the film. In
Fig. 4, DU
R
is plotted versus d. The expected linear dependence
is confirmed. Moreover, the data can be described by a regression
line going through the point of origin. From those results, one
might conclude that the whole sample material on the chip takes
part in the dynamic glass transition and no boundary layer with a
reduced mobility is present.
3.1. Conventional analysis of specific heat spectroscopy data
Fig. 5 gives the normalized phase angle versus temperature for
different film thicknesses for a frequency of 160 Hz. For all
values of dthe data collapse into a common curve. This means
that the dynamic glass transition temperature is independent
of the film thickness. Similar results were obtained by AC-chip
calorimetry for PS,
19,39
PMMA,
50,58
poly(2,6-dimethyl-1,5-phenylene
oxide),
40
polycarbonate
41
andalsopoly(vinylmethylether).
42
At the
first glance the results obtained here are in accordance with
the dielectric data given in ref. 20 and 50 but disagree with
findings discussed in ref. 38 and 48.
To analyse the data in more detail, Gaussians were fitted to
the normalized phase angle as depicted in inset A of Fig. 6.
40
From such analysis, the maximum temperature of the normal-
ized phase angle is estimated at the given frequency and the
relaxation map can be constructed (see Fig. 6). Within the
Fig. 3 Real part (a) and phase angle (b) of the complex differential voltage
of a thin P2VP polymer film (347 nm) measured at a frequency of 160 Hz.
The contribution of the underlying step in the heat capacity in the raw data
of the phase angle (upper panel) was subtracted from the all over curve
(lower panel).
Fig. 4 DU
R
versus the film thickness dfor a frequency of 160 Hz. The solid
line is a linear regression to the data. For low film thickness the error is
somewhat larger. Therefore the data points for the lowest film thickness
might deviate slightly from the regression line.
Fig. 5 Normalized phase angle of the complex differential voltage versus
temperature measured for thin P2VP films at a frequency of 160 Hz for
selected thicknesses of 400, 347, 216, 85, 50, and 22 nm.
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experimental error of 3 K, the data for all film thicknesses
collapse into one chart. As mentioned above, this is in agreement
with AC-chip calorimetry studies on other polymers.
19,39–42,58
The temperature dependence of the relaxation rates can be
described by the Vogel/Fulcher/Tammann (VFT) equation
59–61
log fp¼log f1A
TT0
(3)
where f
N
and Aare fitting parameters and T
0
is called ideal
glass transition or Vogel temperature, which is found to be
30–70 K below the thermal T
g
. For all film thicknesses the data
can be described by a common VFT-fit (see Fig. 6). Due to the
limited frequency range of the specific heat spectroscopy, the
prefactor f
N
was taken from the dielectric results (see below)
and kept constant during the fit procedure.
In Fig. 6, the data for a bulk sample measured by dielectric
spectroscopy are included as well. Further, the temperature
dependence of these data can be described by the VFT equation
where the estimated value for the Vogel temperature T
0
is close
to that estimated from the thermal data (see caption Fig. 6).
The dielectric and thermal data overlap more or less, which
is a bit uncommon for most materials. The thermal and
dielectric data usually exhibits a systematic shift, as previously
found for different homopolymers,
41,42
and also for low mole-
cular compounds.
62
The inset B of Fig. 6 compares dielectric data measured for
thin films of P2VP with the VFT fit line extracted from the
specific heat spectroscopy data. The dielectric data are the
averaged data in the thickness range of 172 nm down to
8 nm, taken form ref. 50. The free surface was implemented
by the use of insulating colloids as spacers. For more details see
ref. 50. Both sets of data, where samples have one free surface,
agree nicely with each other and both sets of relaxation have the
same temperature dependence. A similar behaviour should be
expected for mechanical measurements, which are hard to
conduct in the case of ultrathin films.
3.2. Contact angle measurements
To characterize the interaction of the P2VP segments with the
SiO
2
surface of the substrate contact angle measurements were
carried out. It is assumed that a silicon wafer with a 500 nm
native SiO
2
layer has the same surface properties than the used
AC-chip. The estimated contact angles obtained for the different
test liquids which are summarized in Table 1.
The total surface energy g
Total
of a sample is expressed by
g
Total
=g
LW
+g
P
where g
LW
and g
P
are the dispersive and polar
components of the surface energy, respectively.
63,64
The measured
contact angles y
i
for the liquid iare related by the Owens/Wendt
theory,
65,66
which is a combination of Young’s relation with Good’s
equation (for details see ref. 67) to the polar and dispersive
components of the surface energies of the solid and liquid by
1þcos yi
ðÞgL;i
2ffiffiffiffiffiffiffi
gLW
L;i
q¼ffiffiffiffi
gP
S
qffiffiffiffiffiffi
gP
L;i
qffiffiffiffiffiffiffi
gLW
L;i
qþffiffiffiffiffiffiffi
gLW
S
q(4)
where g
P
S
and g
LW
S
are the dispersive and polar components of the
surface energy of the polymer or the substrate (S = P2VP, SiO
2
). The
values for the surface tension of the test liquids were taken from
ref. 63. Using at least 3 test liquids, an Owens/Wendt plot accord-
ing to eqn (4) is created and the polar and dispersive components
of the solid surface energy are estimated by linear regression.
Results are presented in Table 2.
The rule of Fowkes
64
was applied to estimate the interfacial
energy g
SP
between P2VP and SiO
2
, which reads
gSP ¼gAþgB
ðÞ2gLW
AgLW
B

1
2þgP
AgP
B

1
2

(5)
Fig. 6 Relaxation rates versus inverse temperature for different film
thicknesses estimated from the normalized phase angle (open symbols):
circles 405 nm, squares 349 nm, up sited triangles 230 nm, down
sited triangles 216 nm, stars 150 nm, asterisks 120 nm, left sited
triangles 85 nm, hexagons 50 nm, right sited triangles 22 nm,
crosses 10 nm. The solid circles are data from dielectric spectroscopy for
a bulk sample. Lines are fits of the VFT equation to the corresponding data
with following parameters. Dielectric data (dashed line): log(f
N
[Hz]) =
12, A= 779 K, T
0
= 315.4 K; thermal data (solid line): log(f
N
[Hz]) = 12,
A= 774.6 K, T
0
= 317.8 K. The dotted line gives the thermal glass transition
temperature measured by DSC. Inset (A) gives the normalized phase angle
for a film with a thickness of 347 nm at a frequency of 160 Hz (solid line).
The dashed line is a fit of a Gaussian to the data. The solid line is the
averaged value of the given data points. Inset B compares dielectric data
for ultrathin P2VP films measured with one free surface taken from ref. 50
with the VFT-fit taken from the AC-chip calorimetry. The dielectric data
are averaged data in the thickness range from 172 nm down to 8 nm
because the data for all film thicknesses collapse into one chart.
Table 1 Contact angle values of the test liquids for poly(2-vinyl pyridine).
Data for SiO
2
were taken from ref. 41. The errors result from the average of
measurements on 6 drops
Water Formamide Ethylene glycol Diiodomethane
P2VP 67.510.9165.510.8146.611.1140.010.91
SiO
2
61.011.0148.211.0139.010.6128.911.21
Table 2 Total surface energy g
Total
and its dispersive g
LW
and polar g
P
components for P2VP and the SiO
2
surface of the silicon wafer
g
Total
[mJ m
2
]g
LW
[mJ m
2
]g
P
[mJ m
2
]
P2VP 39.5 29.8 9.7
SiO
2
47.0 44.6 2.3
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where A and B refer to the substrate and the polymer,
respectively.
Using eqn (5) the total interfacial energy between P2VP and
SiO
2
is 4.1 mJ m
2
. According to ref. 35 this is a strong
interaction between the polymer segments and the surface of
the substrate. Therefore an adsorbed layer with a reduced
mobility should be formed at the surface of the substrate in
agreement with results published in ref. 48. Likewise for other
polymers, which interact strongly with the substrate, an increase
of the glass transition temperature should be observed. But
however, no change in dynamic T
g
was observed here by specific
heat spectroscopy. One possible reason for this result might be
the high molecular weight of the used P2VP. As it was shown in
ref. 31 and 71 the formation of the reduced mobility layer
depends on time and the diffusive mobility of the polymer
chains. For a high molecular weight the chain mobility is lower
than for a lower one. It might be that under the selected
experimental condition the annealing time above T
g
was not
long enough to form a reduced mobility at the substrate, which
is thick enough to influence the dynamic glass transition of the
whole film.
Attempts to correlate the change in the glass transition
temperature with the interaction energy between the substrate
and the polymer surface g
SP
are made in ref. 35. In Fig. 7, the
difference of the glass transition temperature for 20 nm thick
films and the bulk value versus the interfacial energy are plotted
for polystyrene and poly(methyl methacrylate) spin coated on
modified octadecyltrichlorosilane (OTS) surfaces according to
ref. 35. For g
SP
o2mJm
2
a depression of the glass transition
temperatures should be observed while for g
SP
42mJm
2
an
increase of T
g
should be observed. In this figure, data for
different polymer substrate combinations, with comparable
film thicknesses, taken from the literature, were added.
(A similar figure but with less data points is given in ref. 68
too.) This concept is able to describe the variation of the T
g
with
interaction energy for polystyrene and poly(methyl methacrylate)
on the modified octadecyltrichlorosilane surfaces. Also for some
other polymers like polycarbonate on SiO
2
or AlO
x32,41
or poly-
(ethylene terephthalate),
69
this correlation seems (partially)
valid. However, it is not generically true for all polymer/substrate
combinations.
For instance, for polysulfone, the interaction energy between
the segments and the substrate surface was estimated to be
g
SP
= 5.45 mJ m
2
, taken from ref. 33. This value is much larger
than the value of polycarbonate/AlO
x
, where a similar increase
of the glass transition temperature of about 5 K (for a ca. 20 nm
thick film) was found. However, the corresponding point
for polysulfone is located far away from the correlation line
between the polymer–substrate interaction energy and the
change in the glass transition temperature. However, by taking
the Vogel temperature, T
0
, as a measure for the thermal glass
transition temperature, the correlation between the change in
the glass transition temperature and the polymer–substrate
interaction energy
31,35
seems to be fulfilled.
For poly(vinyl acetate) films prepared on different surfaces,
70
this correlation is found to be invalid as well. Data for polystyrene
samples having different molecular weights were also added;
71
whereas the interaction energy between the AlO
x
surface of the
substrate and the polystyrene segments is taken from ref. 31.
These data points are located also far away from the correlation
line between the polymer/substrate interaction energy and the
change in the glass transition temperature. The observed depen-
dence on the molecular weight is in contradiction to the assump-
tion that the interaction energy between the polymer segments
and the surface of the substrate is the only parameter, which
determines the value of the glass transition temperature of
ultrathin polystyrene films as well. This regards also the observed
time dependence of the depression of T
g
.
31
In conclusion, the
polymer/substrate interaction energy seems to be not the only
parameter, which is responsible for the change in the thermal
glass transition temperature with the film thickness for ultrathin
films. Packing effects and/or densifications of the reduced mobi-
lity layer at the surface, which can be time and molecular weight
dependent, might also play a role. This is discussed also in detail
in ref. 31.
3.3. Derivative analysis of specific heat spectroscopy data
As discussed above, all AC-chip calorimetry studies on ultrathin
films of homopolymers, including P2VP used in this work
concluded that the dynamic T
g
is thickness independent, in
many cases, contradicting the findings of other studies using
different characterization techniques. For P2VP, one shall
expect to see a rather strong reduced mobile layer as speculated
from the contact angle measurements, shown above. The
reduced mobile layer for this polymer has also been detected
by other methods, e.g. X-ray reflectivity
38
and different BDS
studies.
46,48
On the other hand, also the existence of a high
mobile free surface layer has been evidenced for P2VP.
52
Fig. 7 Difference of the glass transition temperature for ca. 20 nm-thick
films and the corresponding bulk value versus the interfacial energy. The
open symbols for poly(methyl methacrylate) (squares) and polystyrene
(circles) are taken together with the (dashed) correlation line from ref. 35.
The grey dotted lines gives DT
g
= 0 and critical value for g
c
. The data for
polycarbonate (PC, diamonds) are taken from ref. 32 (AlO
x
) and ref. 41
(SiO
2
). The asterisks represent data for polysulfone (PSU) taken from
ref. 33. The value for PET (left pointed triangle) are taken form ref. 69.
The data for poly(vinyl acetate) (PVAC, triangles) prepared on the indicated
surfaces are taken from ref. 70. The values for polystyrene (PS, green stars)
are drawn from ref. 71. P2VP (solid circle) this work.
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To resolve the systematic contradiction of AC-chip calorimetry
from the other characterization method, an advanced analysis
of the calorimetric data might be useful.
From the technical point of view, there are a few problems
with the conventional data analysis of AC-chip calorimetry.
Firstly, the theoretical treatment of the method assumes that
the reference and the sample sensor are identical. In that
theoretical case, one shall expect to see a constant baseline at
zero level for the differential voltage for all frequencies and
temperatures. Because of the fact that the sensors are not
completely identical, an extra contribution will be added up
to the signal coming from the film. This extra contribution to
the differential voltage is not large but depends on both
temperature and frequency. It can be ignored for relatively
thick films (450 nm). However, for thinner films, the difference
between the two empty sensors is in the same order of magni-
tude as the measured U
R
, which might induce artifacts.
The other problem in estimating the dynamic glass transi-
tion temperature from the maximum position of the phase
angle is related to the fact that the measured phase angle has
also an underlying contribution that is proportional to the step
of the heat capacity.
39
This effect will not affect the T
g
peak
position for thick samples. However, for ultrathin films
(o20 nm), the values of the phase angle become small and
comparable to the noise level of the instrument.
40
Thus, the
correction and estimation of the phase angle cannot be done
unambiguously.
For these reasons here the temperature dependence of the
complex differential voltage is analysed in more detail for some
selected sample thicknesses, which was investigated with
an optimized sensitivity. First, the sensitivity of the lock-in
amplifier of the AC-chip calorimeter was set to be between two
and three times the value of U
R
of the sample at 160 Hz and
the corresponding T
g,160 Hz
, to assure an optimal signal and a
reduced noise. Second, pairs of empty sensors were first
measured in the identical frequency and temperature range
as for the samples to obtain the excess contribution of the
sensors. Third, after the measurement of the films spin coated
on one of the analyzed empty sensors, the real part of the
complex voltage obtained for the two empty sensors was sub-
tracted from the corresponding U
R
recorded for the films. This
procedure leads to a corrected U
R
.
Instead of analysing the temperature dependence of the
phase angle, the derivative of the corrected real part of the
complex voltage versus temperature was employed. Since U
R
changes step-like at the dynamic glass transition, its first
derivative will result in a peak. The temperature of the peak
maximum can be taken as the dynamic glass transition tem-
perature at 160 Hz. The derivative method will also allow
estimating dU
R
/dTwhich is related to dc
p
/dTfor both the glassy
and the liquid state. To calculate the derivative of the corrected
real part of the complex voltage was adjacent-point averaged
(over 300 points; for the two thinnest films over 500 points) in
the whole measured temperature range. This will result in a
smoothed signal. To have equidistant points, U
R
(T) was inter-
polated (1000 points). After that the derivative was calculated.
It is worth to mention that the difference in the smoothing
methods and parameters was previously reported to result
in about 2 K difference in the T
g
values, which is within
the uncertainty of the measurement.
40
The advantage of this
method is strong when analyzing measurements of ultrathin
films, where the signal is weak and changes of the phase angle
are hardly to detect. For films thinner than 15 nm, one can
usually still see a small step in U
R
, yet it is not unambiguously
to determine where the step starts and ends. Moreover, in a
first crude approximation the derivative can be considered as a
representation of the relaxation time spectra.
72
Four new samples were prepared (10 nm, 20 nm, 85 nm and
220 nm) and the measurements were analyzed as described above.
Fig. 8 shows the derivative calculated as described versus
temperature for three different sample thicknesses at a frequency
of 160 Hz. For each value of the thicknesses a well-defined peak is
visible indicating the dynamic glass transition. With decreasing
thickness a systematic shift of the dynamic glass transition to
lowertemperaturesisobserved.This shift up to 7 K is essentially
larger than the error of the AC-chip calorimetric measurement.
The derivative method was also applied to the other samples
prepared previously and a dynamic glass transition tempera-
ture at 160 Hz was estimated from the maximum position of
the derivative. These data were plotted in Fig. 9 versus the
thickness of the film. The dynamic glass transition temperature
of the bulk sample is taken as the average value of the dynamic
glass transition temperature for the five samples with the
highest thicknesses.
For small film thicknesses, the value of the dynamic glass
transition is below this average value and further decreases
with decreasing film thickness. Because a decrease of the
dynamic glass temperature is considered as the influence of a
free surface,
11
this result can be considered as an evidence for a
free surface with a higher molecular mobility from calorimetric
measurements.
It should be shortly summarized why the traditional and the
derivative based data analysis give different results. Firstly, in
the phase angle two different quantities with well-defined
Fig. 8 Derivative of the corrected real part of the complex differential
voltage with regard to temperature versus temperature for the indicated
film thicknesses at the frequency of 160 Hz. For sake of clearness the
curves were shifted along the y-scale.
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physical meanings are mixed up, the real and the loss part of
the complex differential voltage. The correction of the phase
angle for the real part of the complex voltage cannot be done
unambiguously especially for low film thickness as discussed
above. Secondly, the derivative of the real part of the complex
differential voltage can be considered as an estimation of
the underlying relaxation time spectra.
72
This means both
quantities weight the underlying dynamics in a different way.
This fact is unimportant for thick films but might become
relevant for low film thicknesses. A closer inspection of Fig. 5
that also the phase angle measured for higher thickness seem
to be located at somewhat higher temperatures which is con-
sistent with the derivative analysis.
Some further evidence for a mobile surface layer comes from
the shape of dU
R
/dT versus temperature. A more detailed
inspection of Fig. 8 reveals that the width of the derivative for
a thin film (see for instance 10 nm) is broader than that
measured for a larger thickness. This fact is illustrated in more
detail in Fig. 10, where the derivative for a 10 nm and a 40 nm
thick film are compared. Therefore, the derivative is normal-
ized with respect to both its intensity and peak temperature.
Fig. 10 reveals that the peak for the 10 nm thick film is much
broader than that for the 40 nm one. Firstly, compared to the
40 nm thick layer, the film with a thickness of 10 nm shows a
considerable broadening at the lower temperature side. In the
sense of distribution of relaxation times, this corresponds to an
increased contribution of relaxation modes having shorter
relaxation times. With decreasing film thickness, the influence
of a surface layer with a higher mobility will increase. There-
fore, in addition to the decrease of the dynamic glass transition
with decreasing film thickness, the broadening of the relaxa-
tion spectra on the low temperature side gives further evidence
for the existence of a surface layer with a higher molecular
mobility at the polymer air interface.
Besides the broadening of the spectra at the low temperature
side for the thin film for the 10 nm thin film there is also
a broadening of the derivative at temperatures above the
dynamic glass transition temperature. This broadening at the
high temperature side of the spectra is due to relaxation modes
having a reduced mobility. As shown by the contact angle
measurements, discussed above, the P2VP segments should
strongly interact with the SiO
2
surface of the sensor, which
should result in slowing down of the molecular dynamics of the
polymer segments close to the surface. Therefore, the broad-
ening of the spectra at high temperatures is assigned to
polymer segments, which are in interaction with the SiO
2
surface of the sensor. A corresponding broadening was
observed by dielectric spectroscopy employing nanostructured
electrodes.
20
A closer inspection of the data for the 10 nm thick
film reveals that there is a small shoulder at TT
Max
=28K
(T= 424 K). This shoulder is found at the same temperature
frequency position, where for the nanocomposites of P2VP with
silica nanoparticles, discussed in ref. 48, the relaxation process
is observed, which was related to the fluctuations of P2VP
segments adsorbed at the surface of the silica particles. This
coincidence provides further evidence that a reduced mobility
layer is formed at surface of the calorimeter chip. Probably, due
to the high molecular weight of the used P2VP, the formation of
this reduced mobility layer will take longer time. Under the
employed experimental conditions, it is likely that the thick-
ness of this layer is small and will not influence the dynamic
glass transition behavior of the whole film. For future work,
additional investigations are planned where the annealing time
and temperature, during film preparation, are varied in broader
ranges. This includes further a variation of the molecular
weight because it was shown for instance that for polystyrene
71
the change of the glass transition temperature depends on
molecular weight due to a changed adsorption kinetics.
It is well known that the specific heat capacity in the glassy
state has a stronger temperature dependence than in the
liquid,
73
which means (dc
p
/dT)
Glass
4(dc
p
/dT)
Liquid
. Close to
the glass transition c
p
(T) can be approximated by linear depen-
dencies in both the glassy and liquid state. In the derivative
representation, this is reflected by constant values of the
derivative dU
R
/dTwhich corresponds to dc
p
/dTindependent
of temperature below and above the dynamic glass transition.
The inset of Fig. 11 depicts the derivative versus temperature
for a relatively thick film of 347 nm. For this film, which
can be considered as bulk-like, the expected relationship
Fig. 9 Dynamic glass transition temperature measured at 160 Hz versus
film thickness d. The dashed line is the average value of the five data points
with largest thicknesses. Fig. 10 Normalized derivative (dU
R
/dT)/(dU
R
/dT)
Max
versus temperature
at a frequency of 160 Hz for a 10 nm (open squares) and a 40 nm
(open stars) thick film.
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(dc
p
/dT)
Glass
4(dc
p
/dT)
Liquid
is fulfilled. However, Fig. 11 shows
further that with decreasing film thickness, this relationship
changes. For a film with a 220 nm thickness, (dU
R
/dT)
Glass
E
(dU
R
/dT)
Liquid
holds; whereas for a thinner film with a thick-
ness of 70 nm the relationship is reversed (dU
R
/dT)
Glass
o
(dU
R
/dT)
Liquid
. This is not only observed for the considered
thicknesses, but also for the other thicknesses as well (see Fig. 8
and 10). Obviously, confinement effects influence the tempera-
ture dependencies of the specific heat capacity in the liquid and
glassy state. Such change in the temperature dependence of
specific heat capacity before and after the dynamic glass
transition region was able to be observed at relatively high
thicknesses, above 220 nm in the present study. The critical
thickness is possibly molecular weight dependent, which needs
further quantitative measurements. It was already reported that
for PS with M
w
= 1400 kg mol
1
, a change in the temperature
dependence of specific heat capacity at the glass transition
occurred from several hundred nm.
43
In the glassy state, c
p
(T)
originates from vibrations. The same vibrations are also
responsible for the temperature dependence of the thermal
expansion. The specific heat capacity and the thermal expan-
sion coefficient are linked to each other.
74
It has been reported
previously that the thermal expansion coefficient in the glassy
state for thin films decreases with the film thickness.
75,76
These findings are quite similar to the results found here for
P2VP. Moreover, quasielastic neutron scattering experiments
for thin films of polystyrene and polycarbonate
77,78
showed that
the mean square displacement hr
2
idecreases with decreasing
film thickness. Also a direct investigation of the vibrational
density of states in the frequency range of excess vibrations
characteristic for the glassy state (Boson peak) show a decrease
of the intensity of the Boson peak with decreasing film thick-
ness for polystyrene for relatively high thicknesses of
100 nm.
79,80
This behavior is equivalent to a decrease of the
mean square displacement. Using a harmonic approximation
hr
2
ican be related to a force constant f
K
by f
K
B1/hr
2
i.
A decrease of the mean square displacement can therefore be
explained by an increase of the force constant. This means a
change from a soft to hard potential. Taking as well as
anharmonic contributions into account, the change of the
temperature dependence of the specific heat capacity in the
glassy state might be explained by a hardening of the potential
of the vibrations. However, it is worth to note that the change of
the specific heat capacity in the glassy and liquid state might
also be explained by a three layer model which also applies
here.
81
To differentiate between both possibilities, additional
investigations on a broader range of samples and different
polymers are required. Such studies are under preparation,
which will also including a more quantitative discussion.
4. Conclusion
Specific heat spectroscopy employing differential AC-chip
calorimetry in the frequency range from 1 Hz to 10
4
Hz with
a sensitivity of pJ K
1
was used to study the dynamic glass
transition behavior of ultrathin poly(2-vinyl pyridine) films with
thicknesses from 405 nm down to 10 nm. To characterize
the interaction of the P2VP segments with the surface of the
substrate, contact angle measurements was utilized along with
AFM investigation to study the topology of the films. Broad-
band dielectric spectroscopy was used to obtain the molecular
dynamics for the bulk sample.
AC-chip calorimetry delivers the real part and the phase
angle of the complex differential voltage as a measure of
the complex heat capacity as function of temperature and
frequency simultaneously. The data were analyzed by two
different methods. In a rather traditional data analysis,
the dynamic glass transition temperature is estimated from the
maximum position of the measured phase angle. These data
showed no thickness dependence of the dynamic glass transition
temperature down to ca. 22 nm, within in the error of the
measurement of 3K.Thisresultisinagreementwithdielectric
data obtained for samples having one free surface, yet still in
disagreement to other literature data. Therefore second method
was established which is based on the first derivative of the real
part of the complex differential voltage with regard to tempera-
ture. These data show a decrease of the dynamic glass transition
temperature with decreasing thickness of about 7 K. This decrease
canbeexplainedasaresultoftheinfluenceofsurfacelayerwitha
higher molecular mobility. Moreover, for thin films the data
showed a broadening at the lower temperature side of the
dynamic glass transition, which can be considered as a further
prove for a surface layer.
Moreover, contact angle measurements showed that the
P2VP/SiO
2
interaction was rather a strong one, 4.1 mJ m
2
,
which suggests that an absorbed layer of reduced mobility
should exist at the polymer/substrate interface. An absorbed
layer was evidenced for films below 50 nm, through another
broadening of the peak with the appearance of a shoulder at
the higher temperature side of the spectra that superimposes
with the fluctuations of P2VP segments adsorbed at the surface
of the silica particles, as reported in literature.
Fig. 11 Derivative (dU
R
/dT)/dversustemperature at a frequency of 160 Hz
for a 220 nm (open diamonds) and a 70 nm (open triangles) thick film. The
inset shows the same for a film with a thickness of 347 nm.
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Finally, evidence was provided the temperature dependence
of the specific heat capacity in the glassy and the liquid state
changes depends on the film thickness. These changes were
observed for relatively high film thickness of some 100 nm and
can be considered as confinement effects. For the glassy state
these changes are in agreement with several neutron scattering
studies and can be explained by a hardening of the potential of
the vibrations, and thus the existence of a reduced mobile layer,
in agreement of the three layer model. Nevertheless additional
investigations are required.
Acknowledgements
The authors gratefully acknowledge the financial support
from the German Science Foundation (Deutsche Forschungs-
gemeinschaft, SCHO-470/20-1 and SCHO-470/20-2) is highly
acknowledged.
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