Ou look
•MOSAIX: Tes s o MOSAIX senso s mo e ePIC-o ien ed ( iming, ake hi a e).
•Mechanical and he mal load simula ion: Implemen a ion o design de ails and
c osscheck o FEA on mock-up and i s p o o ype wi h dummy he mal load.
•Mechanical suppo : De ini ion o ma e ials and o design pa ame e s o ma ch
equi ed pe o mances o mechanical s abili y and ma e ial budge . P oduc ion o
p o o ypes a end o he 2025.
Inne Ba el
•S a e Tes s: Con inue he qua e -s a es p oduc ion including I-beam and K9
oam blocks and s a o low es s. Upda e d awings o emaining mold pa s o
ull s a e & manu ac u e.
•Vib a ional Tes s: Tes qua e leng h s a e on ib a ion able o compa e wi h
FEA.
•Mechanical Tes s: Measu e s a e de o ma ion wi h hea gene a ion and in e nal
p essu e.
•The mal Tes s: S udy empe a u e wi h ai low adding dummy ancilla y ASIC.
Ou e Ba el
Ou e Ba el
The ANSYS Modal model is pe o med on a can ile e ed
(di ing boa d) qua e -s a e wi hou senso s: he FEA
gi es a equency o 97 Hz o he i s mode.
This con igu a ion gi es simila magni ude equencies
o a ully suppo ed L4 s a e.
Vib a ional FEA
High
S i ness end
suppo
The Ou e Ba el (OB) is designed o p o ide high p ecision posi ion measu emen s
wi h la ge le e a m o deli e he equi ed momen um esolu ion and accep ance a
in e media e pseudo apidi y.
OB is composed by wo ac i e laye s L3/L4, each segmen ed in s a es assembled
in o a iled/ u bine like ba el s uc u e. L3 and L4 will ha e ou and wo modules
pe acing espec i ely, o a ma e ial budge o 0.55% X/X0 and 0.25% X/X0. The OB
will be equipped wi h a modi ied e sion o he ALICE ITS3 senso called he EIC
La ge A ea Senso (LAS), hinned down o 50 µm and op imized o high yield, low
cos , and la ge a ea co e age.
Qua e -s a e p o o ype (le ), s a e s uc u e (middle)
and OB design ( igh ).
qua e s a e
end
ou e acing
inne acing
OB s uc u e
Two L4 qua e s a es p o o ypes ha e been p oduced, comp ehensi e o he
ca bon ibe op/bo om skins, pu e Kap on FPC mock-ups and SLA 3D p in ed
s a e end suppo s. They show no no iceable wis s, bu ein o cemen s will be
needed o a oid suppo s end de o ma ion.
Mechanical FEA and Tes
Pic u e o h ee-poin bending es (le )
and FEA wi h 0.981 N e ical load ( igh )
The p o o ypes ha e been es ed wi h
a h ee-poin bending es .
The de o ma ion o he cen e is
measu ed as a unc ion o he load
placed upon i .
The compa ison plo is shown on he
le : he esul s (blue do ) and FEA
(o ange line) a e in good ag eemen .
Silicon Ve ex T acke
The SVT is composed o he Inne Ba el (IB),
he Ou e Ba el (OB), co e ing he cen al
pseudo apidi y ange, and he wo g oups o
endcap disks (no discussed he e), o a o al
ac i e a ea o app oxima ely 8.5 m2.
The ole o he SVT is o pe o m he acking
o cha ged pa icles and he localiza ion o he
p ima y collision e exes and o he
seconda y mic o- e exes, key o iden i ying
weak decays.
The Silicon Ve ex T acke (SVT) is he inne mos subsys em o he u u e ePIC
(elec on-P o on-Ion Collide collabo a ion) de ec o [1,2]. I is designed o mee he
pe o mance equi ed by he physics p og am a EIC (Elec on-Ion Collide ), he new
accele a o acili y ha will be buil a he B ookha en Na ional Labo a o y (Up on,
NY, USA) [3].
Top: de ec o schema ic and pic o ial iew o
IB and OB hal -ba el.
Bo om: equi ed pe o mances om he
physics wo king g oup compa ed o a as
simula ion o ans e se momen um esolu ion
and dis ance o closes app oach o acks.
[1] Dalla To e S., ”The ePIC de ec o a he EIC”, CERN De ec o Semina 2024, h ps://indico.ce n.ch/e en /1418391/
[2] Gonella L., "De elopmen o a Silicon Ve ex and T acking De ec o o he Elec on-Ion Collide .”, The 32nd In e na ional Wo kshop on Ve ex De ec o s.
[3] Khalek Abdul R. e al., "Science equi emen s and de ec o concep s o he elec on-ion collide : EIC yellow epo ”, Nuclea Physics A 1026 (2022): 122447.
[4] ALICE collabo a ion, "Technical Design epo o he ALICE Inne T acking Sys em 3 - ITS3. A ben wa e -scale monoli hic pixel de ec o ", CERN-
LHCC-2024-003, h ps://cds.ce n.ch/ eco d/2890181
Inne Ba el
The Inne Ba el (IB) is designed o p o ide p ecise
e ex econs uc ion wi h asymp o ic esolu ion
be e han 10 µm, and con ibu ing o momen um
measu emen .
CAD exploded iew o IB suppo wi h
cables and senso s.
The mal FEA
Simula ion o he he mal load is ongoing o he qua e -ba el L0-L1 wi hou he Le
Endcap (powe and da a ans e , on wa e ). Tu bulence (c i ical o p ope cooling)
can no be easily achie ed.
S a ic empe a u e FEA
VIN=15 m/s
ΔT=~20℃
32°C
46°C
Ai low cooling and possible addi ion o o he cooling elemen s a e s ill unde
in es iga ion. Measu emen s on mock-up wi h he mal load a e needed o con i m
he p elimina y e alua ion o cooling e ec i eness.
Hea exchange
coe icien
O e es ima ed in he simula ion
Ma e ial budge dis ibu ion as a unc ion
o pseudo apidi y η, as ob ained om
simula ion, is shown on he igh . Fo η
in ange [-1,1] only senso s a e p esen
eaching 0.07%; elsewhe e coppe
(likely o be eplaced wi h aluminum)
cables and se ices inc ease X/X0. CFC
hickness is kep a he uppe sa e
es ima e alue o 1 mm.
Ma e ial budge
las design
Mechanical load simula ions wi h a load sa e y
ac o o 1.5 a e ongoing.
L2 de o ma ion esul s a e ex apola ed by L0-L1.
Resul s om las suppo design simula ions
show an enhanced de o ma ion on e-side a ms.
Mechanical FEA
I suppo is made o sepa a ed pa s
glued oge he , he de o ma ion is 600 µm
on edges, due o coppe cables, no
a ec ing he senso egion. In his case
CFC hickness o 200 µm is conside ed.
IB is composed by h ee ac i e laye s: L0 - L1 - L2.
The design o esees a cylind ical ame s uc u e:
each hal -laye will consis o he senso s, a local
ca bon oam suppo s uc u e and wo se s o FPCs/
cables o powe ing and da a/con ol ansmission. IB
will use he ALICE ITS3 [4] MAPS senso MOSAIX
ab ica ed in 65 nm comme cial CMOS echnology
and hinned o 50 µm. MOSAIX has a pixel size o
21x23 µm2 and a powe consump ion o 40 mW/cm2.
The senso s will be placed one nex o he o he and
ben in a cylind ical shape adii o 37.5, 50 and 125
mm o L0, L1 and L2, espec i ely.
IB s uc u e
glued sepa a e pa s design
200 µm CFC hickness!
2025
D. Colella (Uni e si y and INFN Ba i - [email p o ec ed])
R. Tu isi (INFN Pado a - [email p o ec ed])
o he ePIC SVT de ec o subsys em collabo a ion
The ePIC Silicon Ve ex T acke IB-OB:
design and he mal-mechanical simula ions
