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Grillot, F., Huang, H., Lin, L.-C., Chen, C.-Y., Arsenijevic, D., Bimberg, D. & Lin, F.-Y. (2018). Recent
advances in InAs/GaAs quantum dot lasers with short optical feedback. Proc. SPIE 10682, Semiconductor
Lasers and Laser Dynamics VIII, 106820Y (9 May 2018). https://doi.org/10.1117/12.2314708.
Frédéric Grillot, Heming Huang, Lyu-Chih Lin, Chih-Ying Chen, Dejan
Arsenijevic, Dieter Bimberg, Fan-Yi Lin
Recent advances in InAs/GaAs quantum
dot lasers with short optical feedback
Accepted manuscript (Postprint)Conference paper |
Recent advances in InAs/GaAs quantum dot lasers with
short optical feedback
F. Grillota,b, H. Huanga, L. C. Linc, C. Y. Chenc, D. Arsenijevi`cd, D. Bimbergd,e, and F. Y.
Linc
aLTCI, T´el´ecom ParisTech, Universit´e Paris-Saclay, 46 rue Barrault, Paris, France
bCenter for High Technology Materials, University of New-Mexico, Albuquerque, USA
cInstitute of Photonics Technologies, Department of Electrical Engineering, National Tsing
Hua University, Hsinchu 300, Taiwan
dInstitut f¨ur Festk¨orperphysik, Technische Universit¨at Berlin, Berlin 10623, Germany
eChinese-German Green Photonics Center at the Chinese Academy of Sciences, CIOMP,
Changchun, China
ABSTRACT
The optical feedback dynamics of two multimode InAs/GaAs quantum dot lasers emitting exclusively on sole
ground or excited lasing states is investigated under the short delay configuration. Although the two lasers are
made from the same active medium, their responses to the external perturbation are found not much alike. By
varying the feedback parameters, various periodic and chaotic oscillatory states are unveiled. The ground state
laser is found to be much more resistant to optical feedback, benefiting from its strong relaxation oscillation
damping. In contrast, the excited state laser can easily be driven into very complex dynamics. While the ground
state laser is of importance for the development of isolator-free transmitters, the excited one is essential for
applications taking advantages of chaos such as chaos lidar, chaos radar, and random number generation.
Keywords: Quantum dot lasers, optical feedback, dynamical states
1. INTRODUCTION
The nonlinear dynamics of semiconductor lasers operating under external optical feedback has been widely stud-
ied in the literature.1Indeed, by controlling the feedback strength and the external cavity length, multiple
complex dynamical states and their routes to chaos can be observed.1Compared to quantum well (QW) lasers,
significant breakthroughs have been achieved by using quantum dots (QD) as gain media2.3Their inherent prop-
erties allow producing energy- and cost-efficient devices with outstanding temperature stability, low threshold
current, ultrafast gain dynamics, and low amplified spontaneous emission.3A low threshold current density and
high internal quantum efficiency results in a reduced amount of dissipated heat. Even at high operation temper-
atures, temperature insensitive threshold currents have been observed for p-doped devices.4Most advantages
of QD lasers have been demonstrated for InAs/GaAs QD lasers operating at 1310 nm, hence mostly targeting
short communication links such as metro and access networks. QD lasers usually show three possible regimes of
lasing operation, depending on the bias conditions: (i) ground state (GS) lasing; (ii) dual state emission showing
an interplay dynamic between the GS and the first excited state (ES), and (iii) ES lasing5.6While feedback
dynamics of QD lasers has been widely studied in particular in the context of the dual-state dynamics,7none of
this work focused on the feedback dynamics of QD devices emitting exclusively on single lasing states. Here, we
report for the first time on the feedback dynamics of two InAs/GaAs QD Fabry-Perot (FP) lasers sharing the
same active regions but emitting exclusively on either the GS or the ES. In other words, the QD lasers under
study do not exhibit the GS-ES interplay dynamics where ES and GS lasing take place simultaneously. By
varying the feedback strength under the short delay configuration, multiple dynamical states such as periodic
(P), regular pulse package (RPP), quasi-chaos pulse package (QCPP), and chaotic (C) states are unveiled. The
Further author information: (Send correspondence to F.G.)
F.G.: E-mail: grillot@telecom-paristech.fr
GS laser is found to be rather insensitive to optical feedback due to the large damping factor. In contrast, the
ES laser can be driven more easily into complex dynamical regimes including chaotic states. We believe that
these results are of primary importance for utilizing the nonlinear dynamics for ultrafast devices in particular
for the development of isolator-free transmitters, integrated self-pulsating devices and other applications using
diode laser chaos.8
2. LASER STRUCTURE AND EXPERIMENTAL SETUP
The dynamical characteristics of the two FP multimode QD lasers, one emitting exclusively on the GS and one
on the ES, are investigated and compared under different operation and feedback conditions. For both lasers,
their active regions comprise 10 InAs dot sheets grown in InGaAs QWs by molecular beam epitaxy (MBE) with
a dot-in-well structure. The dot densities are around 3 5×1010cm2per layer and their lateral extensions
approach 30 nm. Both laser types have internal cavities of 1 mm long and 2 µm waveguides etched through the
active area. Lasers are left as-cleaved and cavity lengths are both 1 mm long while the ridge waveguide (RWG)
etched through the active region is 2 µm wide. For the GS laser, the threshold current Ith is of 16.5 mA and the
external efficiency is 21%. For the ES one, the threshold current Ith is of about 88 mA and the external efficiency
is 11%. Figures 1(a) and 1(b) display the two optical spectra taken at 1.5 times the threshold. The first FP laser
(in red) emits at 1300 nm on the sole GS transition whereas the second (in blue) is at 1230 nm on the sole ES
transition. The insets highlight the center of the emission of both lasers respectively, where the ES one exhibits
a modulated optical spectral envelope in contrast to the GS laser.9In this work, the ES selection was obtained
by exploiting the natural wavelength dispersion of the photoluminescence peak across the entire wafer.9Figure
-80
-60
-40
-20
1200 1220 1240 1260 1280 1300 1320 1340
-80
-60
-40
-20
ES
GS
(b)
Spectral Power (dBm)
(a)
Wavelength (nm)
1298 1300 1302 1304 1306
-60
-40
-20
1226 1228 1230 1232 1234
-60
-40
-20
Figure 1. Optical spectra of the (a) GS and (b) ES lasers measured at 1.5 times the threshold under free-running condition
(no feedback applied).
2 shows the schematic setup of the QD laser subject to optical feedback. The output of the laser towards the
left is fed back to the laser cavity through a partially reflecting mirror to form an external cavity with length
Lext with a minimum cavity length of 2 cm. The ratio between the frequency of the external cavity fext and the
relaxation oscillation frequency fRO is such as fext/fRO >1 meaning that the short cavity regime is investigated
in this paper. A variable optical attenuator is used to adjust the feedback strength ξfdefined as the ratio of the
feedback field to the laser output field. The optical signals are analyzed by an optical spectrum analyzer and
the optical power is measured by a power meter. The electrical signals are detected by two identical high-speed
photodetectors and analyzed by an electrical spectrum analyzer and a real-time oscilloscope.
LD
ISO
PD
PD ESA
OSC
OSA
PM
96%
4%
20%
80%
50%
50%
VOA
Translation Lens
fiber
Mirror
Figure 2. Experimental setup of a QD laser subject to optical feedback. LD: QD laser; ISO: isolator; PD: high-speed
photodetector; ESA: electrical spectrum analyzer; OSA: optical spectrum analyzer; OSC: oscilloscope; PM: power meter.
3. RESULTS AND DISCUSSION
Figure 3 shows the time series and the corresponding power spectra of the dynamical states measured at 1.7
times the threshold for the GS laser. At Lext = 30 mm, a RPP state is demonstrated in Figures 3(a) and 3(b)
for ξf= 0.826. The RPP regime is a typical complex dynamics arising under optical feedback, which manifests
as regular pulsations in the output power.10 It occurs in the very short cavity regime meaning that a very small
Intensity (dBm)
Amplitude (mV)
(a)
5 10 15 20 25 30
-10
-5
0
5
10
0
0 5 10 15
(d)
(c)
P
Time (ns) Frequency (GHz)
0 5 10 15
−90
−80
−70
−60
−50
−40
−30 (b)
SO
f
RPP
FO
f
−90
−80
−70
−60
−50
0
2 4 6 8 10
−4
−2
0
2
4
ext
f
ext
f
Figure 3. Time series and corresponding power spectra of the dynamical states measured at 1.7 times the threshold for
the GS laser with (ξf,Lext) = (a)(b) (0.826, 30 mm), (c)(d) (0.731, 30 mm). Red-dashed lines depict the external cavity
frequency fext and black curves are the spectra without feedback for reference.
f ext (GHz)
0 1 2 3 4 5 6
f
SO (MHz)
0
20
40
60
80
100
1.75
1.5
th
th
I
I
I=
I=
C state. When ξffurther decreases to 0.48, as shown in Figures 5(e) and 5(f), a P state stably oscillating at
fFO = 4 GHz is obtained. Finally, let us stress that in the long cavity regime, more complex dynamical states are
observable in the ES laser hence leading to a complete route to chaos13 which which is fundamentally different
than the dynamics displayed in the GS laser.
Amplitude (mV)
Frequency (GHz)Time (ns)
Intensity (dBm)
(c)
-10
-5
0
5
10
06102 4 8 0 5 10 15
−90
−80
−70
−60
−50
−40
−30 (d)
P
QCPP
C
(e)
-10
-5
0
5
10
06102 4 8
-10
-5
0
5
10
06102 4 8
(a)
−90
−80
−70
−60
−50
−40
−30
0 5 10 15
(f)
0 5 10 15
−90
−80
−70
−60
−50
−40
−30 (b)
SO
f
FO
f
ext
f
ext
f
ext
f
Figure 5. Time series and corresponding power spectra of the dynamical states measured at 1.7 times the threshold for
the ES laser with (ξf,Lext) = (a)(b) (0.703, 20 mm), (c)(d) (0.686, 20 mm), (e)(f)(0.48, 20 mm). Red-dashed lines depict
the external cavity frequency fext and black curves are the spectra without feedback for reference.
Figures 6 show fSO extracted from the RPP states of the GS laser and the QCPP states of the ES laser under
different fext. As can be seen, while fSO does not coincide exactly with either fRO or fext,fSO in both states
increases linearly as fext increases.
Compared to the GS laser which is in general stable and insensitive to feedback, the ES laser is more easily
moving to complex dynamics. While a GS laser is of large importance for the development of isolator-free
transmitters in short-reach networks, an ES laser on the other hand can be essential for applications taking
advantages of chaos such as chaos lidars, chaos radars, and high-speed random number generations.1518 From
these results it is obvious that, although the GS and ES lasers have the same active medium, their response to
the feedback are very different. Unlike the ES laser, the carrier dynamics of the GS laser involves transport,
capture, and relaxation, leading to a larger damping rate that stabilizes the laser and prevents the development
Figure 6. Slow oscillation frequencies fSO of the RPP and QCPP states under different external cavity frequencies fext of
both GS and ES lasers respectively. Red lines are the linear fits.
of complex dynamics. As reported in,9the damping is as large as 18 GHz for the GS laser whereas it is below 1
GHz for the ES one. Moreover, the ES laser has a stronger modal competition9which also makes it easier to be
driven into instabilities.
4. CONCLUSIONS
This work investigates for the first time the dynamical states and their spectral characteristics of optical feedback
InAs/GaAs QD lasers emitting exclusively on single lasing states in the short cavity regime. Although the GS
and ES QD lasers are made from the same active medium, their feedback dynamics are found not much alike.
The GS laser is shown to be almost insensitive to feedback, especially at higher bias levels. No chaotic states
was found which is of vital importance for the development of high-speed transmission links operating without
isolator, in agreement with some earliest results. In contrast, the ES laser exhibits a plethora of complex dynamics
including chaotic states, especially at higher bias levels, thus being useful for integrated self-pulsating devices,
chaotic lidars and radars as well as high-speed random bit generations.
5. ACKNOWLEDGMENTS
This work was funded by Campus France (PhC Orchid No. 33721SC), the Institut Mines T´el´ecom (IMT) through
the Futurs & Ruptures program and the Ministry of Science and Technology, Taiwan, under contracts MOST
105-2911-I-007-501 and 103-2112-M-007-019-MY3.
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